Jambunathan; Karthik

Patent Applications and Registrations

Patent applications and USPTO patent grants for Jambunathan; Karthik.The latest application filed is for "epitaxial oxide plug for strained transistors".

Company Profile

41.36.46

Jambunathan; Karthik - Hillsboro OR
Jambunathan; Karthik - Portland OR
JAMBUNATHAN; Karthik - Kirkland WA
JAMBUNATHAN; Karthik - Krikland WA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Backside source/drain replacement for semiconductor devices with metallization on both sides Grant 11,444,166 - Glass , et al. September 13, 2	2022-09-13
Forming crystalline source/drain contacts on semiconductor devices Grant 11,430,787 - Jambunathan , et al. August 30, 2	2022-08-30
Source electrode and drain electrode protection for nanowire transistors Grant 11,411,096 - Jambunathan , et al. August 9, 2	2022-08-09
Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer Grant 11,404,575 - Jambunathan , et al. August 2, 2	2022-08-02
Integration method for finfet with tightly controlled multiple fin heights Grant 11,335,600 - Kim , et al. May 17, 2	2022-05-17
Epitaxial Oxide Plug For Strained Transistors App 20220131007 - JAMBUNATHAN; Karthik ; et al.	2022-04-28
Source/drain Diffusion Barrier For Germanium Nmos Transistors App 20220093797 - GLASS; Glenn A. ; et al.	2022-03-24
Device, method and system for promoting channel stress in a NMOS transistor Grant 11,264,501 - Mehandru , et al. March 1, 2	2022-03-01
Epitaxial oxide plug for strained transistors Grant 11,251,302 - Jambunathan , et al. February 15, 2	2022-02-15
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors App 20220037530 - GLASS; Glenn A. ; et al.	2022-02-03
Source/drain diffusion barrier for germanium NMOS transistors Grant 11,222,977 - Glass , et al. January 11, 2	2022-01-11
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors Grant 11,189,730 - Glass , et al. November 30, 2	2021-11-30
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch Grant 11,121,030 - Glass , et al. September 14, 2	2021-09-14
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements Grant 11,101,350 - Glass , et al. August 24, 2	2021-08-24
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors Grant 11,101,356 - Glass , et al. August 24, 2	2021-08-24
Transistors employing non-selective deposition of source/drain material Grant 11,101,268 - Jambunathan , et al. August 24, 2	2021-08-24
Transistors with lattice matched gate structure Grant 11,081,570 - Jambunathan , et al. August 3, 2	2021-08-03
Transistors with channel and sub-channel regions with distinct compositions and dimensions Grant 11,069,795 - Jambunathan , et al. July 20, 2	2021-07-20
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer Grant 11,056,592 - Jambunathan , et al. July 6, 2	2021-07-06
Etching fin core to provide fin doubling Grant 11,024,737 - Mohapatra , et al. June 1, 2	2021-06-01
Techniques for increasing channel region tensile strain in n-MOS devices Grant 11,011,620 - Mehandru , et al. May 18, 2	2021-05-18
Epitaxial buffer to reduce sub-channel leakage in MOS transistors Grant 11,004,954 - Jambunathan , et al. May 11, 2	2021-05-11
Methods of forming doped source/drain contacts and structures formed thereby Grant 11,004,978 - Glass , et al. May 11, 2	2021-05-11
Silicon Substrate Modification To Enable Formation Of Thin, Relaxed, Germanium-based Layer App 20210083116 - JAMBUNATHAN; KARTHIK ; et al.	2021-03-18
Backside Source/drain Replacement For Semiconductor Devices With Metallization On Both Sides App 20210074823 - Glass; Glenn A. ; et al.	2021-03-11
Geometry tuning of fin based transistor Grant 10,944,006 - Glass , et al. March 9, 2	2021-03-09
Backside source/drain replacement for semiconductor devices with metallization on both sides Grant 10,892,337 - Glass , et al. January 12, 2	2021-01-12
Doped Insulator Cap To Reduce Source/drain Diffusion For Germanium Nmos Transistors App 20210005722 - Glass; Glenn A. ; et al.	2021-01-07
Source/drain Diffusion Barrier For Germanium Nmos Transistors App 20210005748 - Glass; Glenn A. ; et al.	2021-01-07
Diverse Transistor Channel Materials Enabled By Thin, Inverse-graded, Germanium-based Layer App 20200411691 - JAMBUNATHAN; KARTHIK ; et al.	2020-12-31
Transistors With Channel And Sub-channel Regions With Distinct Compositions And Dimensions App 20200411513 - Jambunathan; Karthik ; et al.	2020-12-31
Techniques for controlling transistor sub-fin leakage Grant 10,879,241 - Glass , et al. December 29, 2	2020-12-29
Doped Sti To Reduce Source/drain Diffusion For Germanium Nmos Transistors App 20200365711 - Glass; Glenn A. ; et al.	2020-11-19
Forming Crystalline Source/drain Contacts On Semiconductor Devices App 20200365585 - JAMBUNATHAN; Karthik ; et al.	2020-11-19
Nanowire For Transistor Integration App 20200303499 - GLASS; Glenn A. ; et al.	2020-09-24
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements App 20200273952 - GLASS; GLENN A. ; et al.	2020-08-27
Source Electrode And Drain Electrode Protection For Nanowire Transistors App 20200273998 - JAMBUNATHAN; Karthik ; et al.	2020-08-27
Techniques for forming transistors including group III-V material nanowires using sacrificial group IV material layers Grant 10,749,032 - Mohapatra , et al. A	2020-08-18
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors App 20200258982 - A1	2020-08-13
Backside contact resistance reduction for semiconductor devices with metallization on both sides Grant 10,734,412 - Glass , et al.	2020-08-04
Device, Method And System For Promoting Channel Stress In A Nmos Transistor App 20200227558 - Mehandru; Rishabh ; et al.	2020-07-16
Epitaxial Oxide Plug For Strained Transistors App 20200220014 - Jambunathan; Karthik ; et al.	2020-07-09
Substrate Defect Blocking Layers For Strained Channel Semiconductor Devices App 20200219774 - Jambunathan; Karthik ; et al.	2020-07-09
Germanium-rich channel transistors including one or more dopant diffusion barrier elements Grant 10,692,973 - Glass , et al.	2020-06-23
Methods Of Forming Doped Source/drain Contacts And Structures Formed Thereby App 20200176601 - Glass; Glenn ; et al.	2020-06-04
Methods of forming self aligned spacers for nanowire device structures Grant 10,672,868 - Jambunathan , et al.	2020-06-02
Metal To Source/drain Contact Area Using Thin Nucleation Layer And Sacrificial Epitaxial Film App 20200161440 - Jhaveri; Ritesh ; et al.	2020-05-21
Methods of forming doped source/drain contacts and structures formed thereby Grant 10,573,750 - Glass , et al. Feb	2020-02-25
Crystallized silicon carbon replacement material for NMOS source/drain regions Grant 10,559,689 - Jambunathan , et al. Feb	2020-02-11
Reduced leakage transistors with germanium-rich channel regions Grant 10,516,021 - Glass , et al. Dec	2019-12-24
Sub-fin sidewall passivation in replacement channel FinFETS Grant 10,510,848 - Glass , et al. Dec	2019-12-17
Transistors Employing Non-selective Deposition Of Source/drain Material App 20190355721 - JAMBUNATHAN; KARTHIK ; et al.	2019-11-21
Transistor including tensile-strained germanium channel Grant 10,483,353 - Mohapatra , et al. Nov	2019-11-19
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements App 20190348500 - GLASS; Glenn A. ; et al.	2019-11-14
Transistors Employing Carbon-based Etch Stop Layer For Preserving Source/drain Material During Contact Trench Etch App 20190341300 - GLASS; GLENN A. ; et al.	2019-11-07
Techniques for forming transistors on the same die with varied channel materials Grant 10,418,464 - Glass , et al. Sept	2019-09-17
Prevention of subchannel leakage current in a semiconductor device with a fin structure Grant 10,403,752 - Jambunathan , et al. Sep	2019-09-03
Transistor fin formation via cladding on sacrificial core Grant 10,373,977 - Glass , et al.	2019-08-06
Nanowire Transistors Employing Carbon-based Layers App 20190221641 - Glass; Glenn A. ; et al.	2019-07-18
Backside Source/drain Replacement For Semiconductor Devices With Metallization On Both Sides App 20190221649 - Glass; Glenn A. ; et al.	2019-07-18
Epitaxial Buffer To Reduce Sub-channel Leakage In Mos Transistors App 20190214479 - JAMBUNATHAN; KARTHIK ; et al.	2019-07-11
Techniques For Increasing Channel Region Tensile Strain In N-mos Devices App 20190207015 - MEHANDRU; RISHABH ; et al.	2019-07-04
Transistors With Lattice Matched Gate Structure App 20190189785 - JAMBUNATHAN; KARTHIK ; et al.	2019-06-20
Backside Contact Resistance Reduction For Semiconductor Devices With Metallization On Both Sides App 20190157310 - GLASS; GLENN A. ; et al.	2019-05-23
Techniques For Forming Transistors Including Group Iii-v Material Nanowires Using Sacrificial Group Iv Material Layers App 20190043993 - MOHAPATRA; CHANDRA S. ; et al.	2019-02-07
Etching Fin Core To Provide Fin Doubling App 20190035926 - MOHAPATRA; Chandra S. ; et al.	2019-01-31
Geometry Tuning Of Fin Based Transistor App 20190019891 - GLASS; Glenn A. ; et al.	2019-01-17
Crystallized Silicon Carbon Replacement Material For Nmos Source/drain Regions App 20180374951 - JAMBUNATHAN; KARTHIK ; et al.	2018-12-27
Transistor Including Tensile-strained Germanium Channel App 20180358440 - MOHAPATRA; CHANDRA S. ; et al.	2018-12-13
Methods Of Forming Self Aligned Spacers For Nanowire Device Structures App 20180358436 - Jambunathan; Karthik ; et al.	2018-12-13
Reduced Leakage Transistors With Germanium-rich Channel Regions App 20180331184 - GLASS; GLENN A. ; et al.	2018-11-15
Methods Of Forming Doped Source/drain Contacts And Structures Formed Thereby App 20180261696 - Glass; Glenn ; et al.	2018-09-13
Techniques For Controlling Transistor Sub-fin Leakage App 20180247939 - GLASS; GLENN A. ; et al.	2018-08-30
Ge/SiGe-channel and III-V-channel transistors on the same die Grant 9,997,414 - Glass , et al. June 12, 2	2018-06-12
Integration Method For Finfet With Tightly Controlled Multiple Fin Heights App 20180158737 - KIM; Seiyon ; et al.	2018-06-07
Transistor Fin Formation Via Cladding On Sacrifical Core App 20180158841 - GLASS; GLENN A. ; et al.	2018-06-07
Carbon-based Interface For Epitaxially Grown Source/drain Transistor Regions App 20180151733 - GLASS; GLENN A. ; et al.	2018-05-31
Sub-fin Sidewall Passivation In Replacement Channel Finfets App 20180151677 - GLASS; GLENN A. ; et al.	2018-05-31
Resistance Reduction In Transistors Having Epitaxially Grown Source/drain Regions App 20180151732 - MEHANDRU; RISHABH ; et al.	2018-05-31
Techniques For Forming Transistors On The Same Die With Varied Channel Materials App 20180108750 - GLASS; GLENN A. ; et al.	2018-04-19
Prevention Of Subchannel Leakage Current App 20170330966 - JAMBUNATHAN; KARTHIK ; et al.	2017-11-16
Techniques For Forming Ge/sige-channel And Iii-v-channel Transistors On The Same Die App 20170162447 - GLASS; GLENN A. ; et al.	2017-06-08

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