Patent | Date |
---|
Method of forming a semiconductor device structure and semiconductor device structure Grant 10,535,674 - Faul , et al. Ja | 2020-01-14 |
MEMS capacitive pressure sensors in fully depleted semiconductor on insulator (FDSOI) Grant 10,466,126 - Faul , et al. No | 2019-11-05 |
Pressure Sensors App 20190265117 - FAUL; Juergen ;   et al. | 2019-08-29 |
Semiconductor Device Including Buried Capacitive Structures And A Method Of Forming The Same App 20180240796 - Baars; Peter ;   et al. | 2018-08-23 |
Semiconductor device including buried capacitive structures and a method of forming the same Grant 10,056,369 - Baars , et al. August 21, 2 | 2018-08-21 |
Semiconductor Structure Including One Or More Nonvolatile Memory Cells And Method For The Formation Thereof App 20180175209 - Faul; Juergen ;   et al. | 2018-06-21 |
Semiconductor device including buried capacitive structures and a method of forming the same Grant 9,929,148 - Baars , et al. March 27, 2 | 2018-03-27 |
Method Of Forming A Semiconductor Device Structure And Semiconductor Device Structure App 20170317097 - Faul; Juergen ;   et al. | 2017-11-02 |
Method Of Forming A Semiconductor Device Structure And Semiconductor Device Structure App 20170250191 - Faul; Juergen ;   et al. | 2017-08-31 |
Method of forming a semiconductor device structure and semiconductor device structure Grant 9,748,259 - Faul , et al. August 29, 2 | 2017-08-29 |
Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure Grant 9,324,854 - Schloesser , et al. April 26, 2 | 2016-04-26 |
Integrated circuits with separate workfunction material layers and methods for fabricating the same Grant 9,299,616 - Faul , et al. March 29, 2 | 2016-03-29 |
Wafer edge protection Grant 9,236,240 - Cai , et al. January 12, 2 | 2016-01-12 |
REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL App 20150228656 - SCHLOESSER; Till ;   et al. | 2015-08-13 |
Contact structure for a semiconductor device and methods of making same Grant 9,064,733 - Jakubowski , et al. June 23, 2 | 2015-06-23 |
Novel Contact Structure For A Semiconductor Device And Methods Of Making Same App 20150145061 - Jakubowski; Frank ;   et al. | 2015-05-28 |
Methods of forming bulk FinFET devices so as to reduce punch through leakage currents Grant 9,023,715 - Faul , et al. May 5, 2 | 2015-05-05 |
Reduced spacer thickness in semiconductor device fabrication Grant 8,962,414 - Faul , et al. February 24, 2 | 2015-02-24 |
Contact structure for a semiconductor device and methods of making same Grant 8,956,928 - Jakubowski , et al. February 17, 2 | 2015-02-17 |
Contact landing pads for a semiconductor device and methods of making same Grant 8,951,920 - Jakubowski , et al. February 10, 2 | 2015-02-10 |
Reduced Spacer Thickness In Semiconductor Device Fabrication App 20150035063 - Faul; Juergen ;   et al. | 2015-02-05 |
Contact Landing Pads For A Semiconductor Device And Methods Of Making Same App 20140335668 - Jakubowski; Frank ;   et al. | 2014-11-13 |
Methods of recessing an active region and STI structures in a common etch process Grant 8,853,051 - Jakubowski , et al. October 7, 2 | 2014-10-07 |
Semiconductor device comprising self-aligned contact elements Grant 8,835,245 - Baars , et al. September 16, 2 | 2014-09-16 |
Contact landing pads for a semiconductor device and methods of making same Grant 8,823,149 - Jakubowski , et al. September 2, 2 | 2014-09-02 |
Wafer Edge Protection App 20140239454 - CAI; Qiaoming ;   et al. | 2014-08-28 |
Semiconductor Device Comprising Self-aligned Contact Elements And A Replacement Gate Electrode Structure App 20140203339 - Schloesser; Till ;   et al. | 2014-07-24 |
Contact Landing Pads For A Semiconductor Device And Methods Of Making Same App 20140159125 - Jakubowski; Frank ;   et al. | 2014-06-12 |
Novel Contact Structure For A Semiconductor Device And Methods Of Making Same App 20140151816 - Jakubowski; Frank ;   et al. | 2014-06-05 |
Semiconductor device comprising self-aligned contact elements and a replacement gate electrode structure Grant 8,722,523 - Schloesser , et al. May 13, 2 | 2014-05-13 |
Methods of forming isolation structures for semiconductor devices by performing a dry chemical removal process Grant 8,716,102 - Jakubowski , et al. May 6, 2 | 2014-05-06 |
Replacement gate compatible eDRAM transistor with recessed channel Grant 8,716,077 - Schloesser , et al. May 6, 2 | 2014-05-06 |
Method of removing gate cap materials while protecting active area Grant 8,697,557 - Baars , et al. April 15, 2 | 2014-04-15 |
Methods for fabricating semiconductor devices with isolation regions having uniform stepheights Grant 8,679,940 - Jakubowski , et al. March 25, 2 | 2014-03-25 |
SOI semiconductor device comprising a substrate diode with reduced metal silicide leakage Grant 8,673,696 - Baars , et al. March 18, 2 | 2014-03-18 |
Methods Of Forming Isolation Structures For Semiconductor Devices By Performing A Dry Chemical Removal Process App 20140051227 - Jakubowski; Frank ;   et al. | 2014-02-20 |
Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making same Grant 8,609,457 - Baars , et al. December 17, 2 | 2013-12-17 |
Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequence Grant 8,603,895 - Jakubowski , et al. December 10, 2 | 2013-12-10 |
Methods Of Forming Bulk Finfet Devices So As To Reduce Punch Through Leakage Currents App 20130280883 - Faul; Juergen ;   et al. | 2013-10-24 |
Methods Of Recessing An Active Region And Sti Structures In A Common Etch Process App 20130273709 - Jakubowski; Frank ;   et al. | 2013-10-17 |
Methods For Fabricating Semiconductor Devices With Isolation Regions Having Uniform Stepheights App 20130217205 - Jakubowski; Frank ;   et al. | 2013-08-22 |
High performance HKMG stack for gate first integration Grant 8,455,960 - Jakubowski , et al. June 4, 2 | 2013-06-04 |
STI silicon nitride cap for flat FEOL topology Grant 8,415,214 - Jakubowski , et al. April 9, 2 | 2013-04-09 |
REPLACEMENT GATE COMPATIBLE eDRAM TRANSISTOR WITH RECESSED CHANNEL App 20130049103 - Schloesser; Till ;   et al. | 2013-02-28 |
High Performance Hkmg Stack For Gate First Integration App 20130020656 - Jakubowski; Frank ;   et al. | 2013-01-24 |
Method of Removing Gate Cap Materials While Protecting Active Area App 20120313187 - Baars; Peter ;   et al. | 2012-12-13 |
Semiconductor Device with DRAM Bit Lines Made From Same Material as Gate Electrodes in Non-Memory Regions of the Device, and Methods of Making Same App 20120280296 - Baars; Peter ;   et al. | 2012-11-08 |
SOI Semiconductor Device Comprising a Substrate Diode with Reduced Metal Silicide Leakage App 20120217582 - BAARS; Peter ;   et al. | 2012-08-30 |
Semiconductor Device Comprising Self-Aligned Contact Elements and a Replacement Gate Electrode Structure App 20120211844 - Schloesser; Till ;   et al. | 2012-08-23 |
Semiconductor Device Comprising Self-aligned Contact Elements App 20120211837 - Baars; Peter ;   et al. | 2012-08-23 |
Sti Silicon Nitride Cap For Flat Feol Topology App 20120187450 - JAKUBOWSKI; Frank ;   et al. | 2012-07-26 |
Method of forming a doped portion of a semiconductor and method of forming a transistor Grant 7,618,867 - Mono , et al. November 17, 2 | 2009-11-17 |
Fabrication method for an integrated circuit structure App 20080124920 - Fitz; Clemens ;   et al. | 2008-05-29 |
Method of forming a doped portion of a semiconductor and method of forming a transistor App 20080026530 - Mono; Tobias ;   et al. | 2008-01-31 |
Integrated Circuit Including a Memory Cell Array App 20070290249 - Popp; Martin ;   et al. | 2007-12-20 |
Memory cell array and method of forming the same Grant 7,274,060 - Popp , et al. September 25, 2 | 2007-09-25 |
Memory cell array and method of forming the same App 20060284225 - Popp; Martin ;   et al. | 2006-12-21 |
Method of manufacturing a semiconductor device App 20060228876 - Storbeck; Olaf ;   et al. | 2006-10-12 |
Multi-layer gate stack structure comprising a metal layer for a FET device, and method for fabricating the same Grant 7,078,748 - Goldbach , et al. July 18, 2 | 2006-07-18 |
Multi-layer Gate Stack Structure Comprising A Metal Layer For A Fet Device, And Method For Fabricating The Same App 20050275046 - Goldbach, Matthias ;   et al. | 2005-12-15 |
Method for fabricating a semiconductor structure Grant 6,967,133 - Amon , et al. November 22, 2 | 2005-11-22 |
Method for fabricating a semiconductor structure App 20040115874 - Amon, Jurgen ;   et al. | 2004-06-17 |