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name:-0.0075740814208984
name:-0.0070209503173828
name:-0.00048613548278809
Imer; Bilge M. Patent Filings

Imer; Bilge M.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Imer; Bilge M..The latest application filed is for "defect reduction of non-polar and semi-polar iii-nitrides with sidewall lateral epitaxial overgrowth (sleo)".

Company Profile
0.6.6
  • Imer; Bilge M. - Goleta CA US
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
Grant 8,795,440 - Imer , et al. August 5, 2
2014-08-05
Defect Reduction Of Non-polar And Semi-polar Iii-nitrides With Sidewall Lateral Epitaxial Overgrowth (sleo)
App 20120098102 - Imer; Bilge M. ;   et al.
2012-04-26
Growth Of Non-polar M-plane Iii-nitride Film Using Metalorganic Chemical Vapor Deposition (mocvd)
App 20120074429 - Imer; Bilge M. ;   et al.
2012-03-29
Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
Grant 8,097,481 - Imer , et al. January 17, 2
2012-01-17
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
Grant 7,955,983 - Imer , et al. June 7, 2
2011-06-07
Defect Reduction Of Non-polar And Semi-polar Iii-nitrides With Sidewall Lateral Epitaxial Overgrowth (sleo)
App 20080185690 - Imer; Bilge M. ;   et al.
2008-08-07
Defect reduction of non-polar and semi-polar III-Nitrides with sidewall lateral epitaxial overgrowth (SLEO)
Grant 7,361,576 - Imer , et al. April 22, 2
2008-04-22
Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
Grant 7,338,828 - Imer , et al. March 4, 2
2008-03-04
Growth Of Non-polar M-plane Iii-nitride Film Using Metalorganic Chemical Vapor Deposition (mocvd)
App 20080026502 - Imer; Bilge M. ;   et al.
2008-01-31
Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
App 20060270087 - Imer; Bilge M. ;   et al.
2006-11-30
Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)
App 20060270076 - Imer; Bilge M. ;   et al.
2006-11-30

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