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Member, method of manufacturing the same, apparatus for manufacturing the same, and semiconductor manufacturing apparatus
Grant 11,424,140 - Kim , et al. August 23, 2 | 2022-08-23 |
Apparatus For Manufacturing A Semiconductor Device
App 20220223384 - TAKADA; Naoyuki ; et al. | 2022-07-14 |
Sintered Body, Method Of Fabricating The Same, Semiconductor Fabricating Device, And Method Of Fabricating Semiconductor Fabricating Device
App 20220162083 - KIM; Chang Hwan ; et al. | 2022-05-26 |
Member, Method Of Manufacturing The Same, Apparatus For Manufacturing The Same, And Semiconductor Manufacturing Apparatus
App 20210111044 - KIM; CHANGHWAN ; et al. | 2021-04-15 |
Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
Grant 10,797,061 - Nishida , et al. October 6, 2 | 2020-10-06 |
Three-dimensional memory device having stressed vertical semiconductor channels and method of making the same
Grant 10,797,060 - Sharangpani , et al. October 6, 2 | 2020-10-06 |
Semiconductor device including a plurality of nitride semiconductor layers
Grant 10,658,469 - Iizuka , et al. | 2020-05-19 |
Methods And Apparatus For Three-dimensional Nonvolatile Memory
App 20190034125 - Sel; Jongsun ; et al. | 2019-01-31 |
Methods and apparatus for three-dimensional nonvolatile memory
Grant 10,115,899 - Yoshida , et al. October 30, 2 | 2018-10-30 |
Semiconductor Device And Manufacturing Method Of Semiconductor Device
App 20170047409 - IIZUKA; Toshihiro ; et al. | 2017-02-16 |
Silicided bit line for reversible-resistivity memory
Grant 9,443,910 - Fujiwara , et al. September 13, 2 | 2016-09-13 |
Method For Fabricating A Metal-insulator-metal (mim) Capacitor Having Capacitor Dielectric Layer Formed By Atomic Layer Deposition (ald)
App 20140327064 - IIZUKA; Toshihiro ; et al. | 2014-11-06 |
Method for fabricating a metal-insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)
Grant 8,815,678 - Iizuka , et al. August 26, 2 | 2014-08-26 |
Method of manufacturing a semiconductor device
Grant 8,440,521 - Fukumaki , et al. May 14, 2 | 2013-05-14 |
Semiconductor Device Having A Thin Film Capacitor And Method For Fabricating The Same
App 20120261735 - IIZUKA; Toshihiro ; et al. | 2012-10-18 |
Semiconductor device having a thin film capacitor of a MIM (metal-insulator-metal) structure
Grant 8,212,299 - Iizuka , et al. July 3, 2 | 2012-07-03 |
Semiconductor device with complementary transistors that include hafnium-containing gate insulators and metal gate electrodes
Grant 8,188,547 - Manabe , et al. May 29, 2 | 2012-05-29 |
Metal-insulator-metal (MIM) capacitor having capacitor dielectric material selected from a group consisting of ZRO2, HFO2, (ZRX, HF1-X)O2 (0<x<1), (ZRy, Ti (O<y<1), (Hfz, Ti-z)O2 (O<z<1) and (Zrk, Ti1, Hfm)O2 (O<K, 1, m<1, K+1+m=1)
Grant 8,169,013 - Iizuka , et al. May 1, 2 | 2012-05-01 |
Method of manufacturing a semiconductor device
App 20120028455 - FUKUMAKI; Naomi ; et al. | 2012-02-02 |
Process for manufacturing a semiconductor device comprising a metal-compound film
Grant 7,943,475 - Yamamoto , et al. May 17, 2 | 2011-05-17 |
Semiconductor Device
App 20100327366 - MANABE; Kenzo ; et al. | 2010-12-30 |
Semiconductor Device And Method For Manufacturing The Same
App 20100176456 - Ikeno; Daisuke ; et al. | 2010-07-15 |
Method For Fabricating A Metal-insulator-metal (mim) Capacitor Having Capacitor Dielectric Layer Formed By Atomic Layer Deposition (ald)
App 20080064147 - IIZUKA; Toshihiro ; et al. | 2008-03-13 |
Method for fabricating a metal insulator-metal (MIM) capacitor having capacitor dielectric layer formed by atomic layer deposition (ALD)
App 20070152256 - Iizuka; Toshihiro ; et al. | 2007-07-05 |
Semiconductor device and manufacturing process therefor
App 20060121671 - Yamamoto; Tomoe ; et al. | 2006-06-08 |
Method for forming capacitor
Grant 6,875,667 - Iizuka , et al. April 5, 2 | 2005-04-05 |
Semiconductor device having a thin film capacitor and method for fabricating the same
App 20050051824 - Iizuka, Toshihiro ; et al. | 2005-03-10 |
Semiconductor device and manufacturing process therefor
App 20040217478 - Yamamoto, Tomoe ; et al. | 2004-11-04 |
Method for forming capacitor
App 20040072401 - Iizuka, Toshihiro ; et al. | 2004-04-15 |
Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same
Grant 6,602,722 - Yamamoto , et al. August 5, 2 | 2003-08-05 |
Method of fabricating a high dielectric constant metal oxide capacity insulator film using atomic layer CVD
Grant 6,596,602 - Iizuka , et al. July 22, 2 | 2003-07-22 |
Semiconductor device having a thin film capacitor and method for fabricating the same
App 20020190294 - Iizuka, Toshihiro ; et al. | 2002-12-19 |
DRAM having a stacked capacitor and a method for fabricating the same
Grant 6,448,597 - Kasai , et al. September 10, 2 | 2002-09-10 |
Process for fabricating capacitor having dielectric layer with pervskite structure and apparatus for fabricating the same
App 20020119617 - Yamamoto, Ichiro ; et al. | 2002-08-29 |
Method for fabricating a semiconductor device
App 20020102810 - Iizuka, Toshihiro ; et al. | 2002-08-01 |
Semiconductor memory device production method
App 20020019109 - Iizuka, Toshihiro | 2002-02-14 |
Semiconductor memory device production method
Grant 6,338,996 - Iizuka January 15, 2 | 2002-01-15 |
Method of manufacturing semiconductor device having thin film capacitor
Grant 6,326,258 - Iizuka December 4, 2 | 2001-12-04 |
Process for fabricating capacitor having dielectric layer with perovskite structure and apparatus for fabricating the same
App 20010004533 - Yamamoto, Ichiro ; et al. | 2001-06-21 |
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