Hsueh; Wayne Y.W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hsueh; Wayne Y.W..The latest application filed is for "integrated circuit including power diode".

Company Profile

0.10.8

Hsueh; Wayne Y.W. - San Jose CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Integrated Circuit Including Power Diode App 20110223729 - Chang; Paul ; et al.	2011-09-15
Integrated circuit including power diode Grant 7,964,933 - Chang , et al. June 21, 2	2011-06-21
Integrated circuit including power diode App 20070246794 - Chang; Paul ; et al.	2007-10-25
Integrated circuit including power diode Grant 7,250,668 - Chang , et al. July 31, 2	2007-07-31
Integrated circuit including power diode App 20060157815 - Chang; Paul ; et al.	2006-07-20
Method of fabricating power rectifier device to vary operating parameters and resulting device Grant 6,765,264 - Chang , et al. July 20, 2	2004-07-20
Power diode having improved on resistance and breakdown voltage Grant 6,743,703 - Rodov , et al. June 1, 2	2004-06-01
Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region Grant 6,624,030 - Chang , et al. September 23, 2	2003-09-23
Power diode having improved on resistance and breakdown voltage App 20030006473 - Rodov, Vladimir ; et al.	2003-01-09
Discrete integrated circuit rectifier device Grant 6,498,367 - Chang , et al. December 24, 2	2002-12-24
Method of fabricating power rectifier device to vary operating parameters and resulting device Grant 6,448,160 - Chang , et al. September 10, 2	2002-09-10
Method of fabricating power rectifier device to vary operating parameters and resulting device App 20020074595 - Chang, Paul ; et al.	2002-06-20
Method of fabricating power VLSI diode devices App 20020076860 - Akiyama, Hidenori ; et al.	2002-06-20
Schottky diode having increased active surface area with improved reverse bias characteristics and method of fabrication Grant 6,404,033 - Chang , et al. June 11, 2	2002-06-11
Schottky diode having increased active surface area and method of fabrication Grant 6,399,996 - Chang , et al. June 4, 2	2002-06-04
Power rectifier device and method of fabricating power rectifier devices App 20020019115 - Rodov, Vladimir ; et al.	2002-02-14
Schottky diode having increased forward current with improved reverse bias characteristics and method of fabrication App 20020008237 - Chang, Paul ; et al.	2002-01-24
Power rectifier device and method of fabricating power rectifier devices Grant 6,331,455 - Rodov , et al. December 18, 2	2001-12-18

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