loadpatents
Patent applications and USPTO patent grants for Hsiao; Ru-Shang.The latest application filed is for "finfet mos capacitor".
Patent | Date |
---|---|
Gate structure of semiconductor device and method of forming same Grant 11,450,758 - Hsiao , et al. September 20, 2 | 2022-09-20 |
Fabrication of long gate devices Grant 11,444,175 - Yang , et al. September 13, 2 | 2022-09-13 |
Semiconductor device and method of manufacturing the same Grant 11,437,495 - Chen , et al. September 6, 2 | 2022-09-06 |
Semiconductor Device and Method App 20220238521 - Yang; Sung-Hsin ;   et al. | 2022-07-28 |
Finfet Mos Capacitor App 20220238729 - Yang; Sung-Hsin ;   et al. | 2022-07-28 |
Semiconductor Device And Method App 20220223590 - WU; Hsi-Jung ;   et al. | 2022-07-14 |
Novel Structure for Metal Gate Electrode and Method of Fabrication App 20220216317 - Hsiao; Ru-Shang ;   et al. | 2022-07-07 |
Method and Structure for Semiconductor Interconnect App 20220148977 - Hsiao; Ru-Shang ;   et al. | 2022-05-12 |
Structure for metal gate electrode and method of fabrication Grant 11,282,934 - Hsiao , et al. March 22, 2 | 2022-03-22 |
Semiconductor structure Grant 11,271,102 - Hsiao , et al. March 8, 2 | 2022-03-08 |
High Voltage Device App 20220068721 - Yang; Sung-Hsin ;   et al. | 2022-03-03 |
Fabrication of Long Gate Devices App 20220068719 - Yang; Sung-Hsin ;   et al. | 2022-03-03 |
Method and structure for semiconductor interconnect Grant 11,232,943 - Hsiao , et al. January 25, 2 | 2022-01-25 |
Gate Structure Of Semiconductor Device And Method Of Forming Same App 20210391441 - Hsiao; Ru-Shang ;   et al. | 2021-12-16 |
Source/drain Epitaxial Structures For High Voltage Transistors App 20210343596 - YANG; Sung-Hsin ;   et al. | 2021-11-04 |
Input/output Devices App 20210335784 - Yang; Sung-Hsin ;   et al. | 2021-10-28 |
Circuit Structure with Gate Configuration App 20210305386 - Hsiao; Ru-Shang ;   et al. | 2021-09-30 |
Metal Gate Structures And Methods Of Fabricating The Same In Field-Effect Transistors App 20210257481 - Hsiao; Ru-Shang ;   et al. | 2021-08-19 |
Semiconductor Device And Method Of Manufacturing The Same App 20210210616 - CHEN; I-Chih ;   et al. | 2021-07-08 |
High Voltage Devices App 20210202321 - Yang; Sung-Hsin ;   et al. | 2021-07-01 |
P-Type FinFET as an Radio-Frequency Device and Method Forming Same App 20210159326 - Hsiao; Ru-Shang ;   et al. | 2021-05-27 |
Methods For Forming Semiconductor Structure App 20210104619 - TSAI; CHUN HSIUNG ;   et al. | 2021-04-08 |
Novel Structure for Metal Gate Electrode and Method of Fabrication App 20210028290 - Hsiao; Ru-Shang ;   et al. | 2021-01-28 |
Semiconductor device and method of manufacturing the same Grant 10,903,336 - Chen , et al. January 26, 2 | 2021-01-26 |
Methods for forming semiconductor structure Grant 10,847,636 - Tsai , et al. November 24, 2 | 2020-11-24 |
Method and Structure for Semiconductor Interconnect App 20200343088 - Hsiao; Ru-Shang ;   et al. | 2020-10-29 |
Method Of Forming Semiconductor Device With Gate App 20200295188 - JENG; Jung-Chi ;   et al. | 2020-09-17 |
Method of forming semiconductor device with gate Grant 10,680,103 - Jeng , et al. | 2020-06-09 |
Semiconductor structure and manufacturing method thereof Grant 10,651,041 - Hsiao , et al. | 2020-05-12 |
Semiconductor Structure App 20200127131 - HSIAO; Ru-Shang ;   et al. | 2020-04-23 |
Methods For Forming Semiconductor Structure App 20200075748 - TSAI; CHUN HSIUNG ;   et al. | 2020-03-05 |
Semiconductor structure Grant 10,510,877 - Hsiao , et al. Dec | 2019-12-17 |
Semiconductor Structure And Manufacturing Method Thereof App 20190287806 - HSIAO; RU-SHANG ;   et al. | 2019-09-19 |
Semiconductor structure and manufacturing method thereof Grant 10,312,092 - Hsiao , et al. | 2019-06-04 |
Semiconductor Device And Method Of Manufacturing The Same App 20190165126 - CHEN; I-Chih ;   et al. | 2019-05-30 |
Method for forming semiconductor device with P/N stacked layers Grant 10,297,691 - Chen , et al. | 2019-05-21 |
Fin-type field effect transistor structure and manufacturing method thereof Grant 10,153,278 - Hsieh , et al. Dec | 2018-12-11 |
Semiconductor Structure App 20180277672 - HSIAO; RU-SHANG ;   et al. | 2018-09-27 |
Air-gap scheme for BEOL process Grant 10,062,603 - Hsiao , et al. August 28, 2 | 2018-08-28 |
Semiconductor device and method of fabricating the same Grant 10,056,455 - Kuan , et al. August 21, 2 | 2018-08-21 |
Sandwich EPI channel for device enhancement Grant 10,008,501 - Hsiao , et al. June 26, 2 | 2018-06-26 |
Semiconductor devices, FinFET devices and methods of forming the same Grant 9,997,633 - Hsiao , et al. June 12, 2 | 2018-06-12 |
Semiconductor structures Grant 9,985,122 - Hsiao , et al. May 29, 2 | 2018-05-29 |
Semiconductor Structure And Manufacturing Method Thereof App 20180144943 - HSIAO; RU-SHANG ;   et al. | 2018-05-24 |
Fin field effect transistor and method for fabricating the same Grant 9,929,268 - Wu , et al. March 27, 2 | 2018-03-27 |
Method For Fabricating Finfet With P/n Stacked Fins App 20180076314 - CHEN; Hung-Pin ;   et al. | 2018-03-15 |
Structure and method for semiconductor device Grant 9,893,150 - Chiang , et al. February 13, 2 | 2018-02-13 |
Semiconductor structure and manufacturing method thereof Grant 9,892,924 - Hsiao , et al. February 13, 2 | 2018-02-13 |
FinFET with P/N stacked fins and method for fabricating the same Grant 9,842,932 - Chen , et al. December 12, 2 | 2017-12-12 |
Finfet With P/n Stacked Fins And Method For Fabricating The Same App 20170345923 - CHEN; Hung-Pin ;   et al. | 2017-11-30 |
Method Of Forming Semiconductor Device With Gate App 20170338342 - JENG; Jung-Chi ;   et al. | 2017-11-23 |
Fin Field Effect Transistor And Method For Fabricating The Same App 20170301793 - Wu; Chii-Ming ;   et al. | 2017-10-19 |
Fin Field Effect Transistor And Method For Fabricating The Same App 20170250268 - Hsiao; Ru-Shang ;   et al. | 2017-08-31 |
Mechanism for forming semiconductor device with gate Grant 9,728,637 - Jeng , et al. August 8, 2 | 2017-08-08 |
Device boost by quasi-FinFET Grant 9,634,122 - Hsiao , et al. April 25, 2 | 2017-04-25 |
Semiconductor Devices, Finfet Devices And Methods Of Forming The Same App 20170098711 - Hsiao; Ru-Shang ;   et al. | 2017-04-06 |
Modified channel position to suppress hot carrier injection in FinFETs Grant 9,570,561 - Hsiao , et al. February 14, 2 | 2017-02-14 |
Dual vertical channel Grant 9,564,487 - Hsiao , et al. February 7, 2 | 2017-02-07 |
Formation method of semiconductor device that includes performing hydrogen-containing plasma treatment on metal gate stack Grant 9,558,955 - Hsiao , et al. January 31, 2 | 2017-01-31 |
Device having sloped gate profile and method of manufacture Grant 9,543,399 - Hsiao , et al. January 10, 2 | 2017-01-10 |
Sandwich Epi Channel For Device Enhancement App 20170005095 - Hsiao; Ru-Shang ;   et al. | 2017-01-05 |
Semiconductor Structures App 20160343822 - Hsiao; Ru-Shang ;   et al. | 2016-11-24 |
Air-gap Scheme For Beol Process App 20160336216 - Hsiao; Ru-Shang ;   et al. | 2016-11-17 |
Fin sidewall removal to enlarge epitaxial source/drain volume Grant 9,490,254 - Hsiao , et al. November 8, 2 | 2016-11-08 |
Sandwich epi channel for device enhancement Grant 9,466,670 - Hsiao , et al. October 11, 2 | 2016-10-11 |
Semiconductor Structure And Manufacturing Method Thereof App 20160276158 - HSIAO; RU-SHANG ;   et al. | 2016-09-22 |
Air-gap scheme for BEOL process Grant 9,449,811 - Hsiao , et al. September 20, 2 | 2016-09-20 |
Structure And Formation Method Of Semiconductor Device With Metal Gate Stack App 20160225630 - HSIAO; Ru-Shang ;   et al. | 2016-08-04 |
Structure and Method for Semiconductor Device App 20160155806 - Chiang; Chen-Chieh ;   et al. | 2016-06-02 |
Shallow trench isolation structure Grant 9,318,371 - Hsiao , et al. April 19, 2 | 2016-04-19 |
Methods of stress engineering to reduce dark current of CMOS image sensors Grant 9,299,734 - Hsiao , et al. March 29, 2 | 2016-03-29 |
Re-crystallization for boosting stress in MOS device Grant 9,287,139 - Hsiao , et al. March 15, 2 | 2016-03-15 |
Mechanism for forming gate Grant 9,281,215 - Jeng , et al. March 8, 2 | 2016-03-08 |
Fin Sidewall Removal To Enlarge Epitaxial Source/drain Volume App 20160035726 - Hsiao; Ru-Shang ;   et al. | 2016-02-04 |
Air-gap offset spacer in FinFET structure Grant 9,252,233 - Hsiao , et al. February 2, 2 | 2016-02-02 |
Structure and method for semiconductor device Grant 9,246,002 - Hsiao , et al. January 26, 2 | 2016-01-26 |
Three-direction alignment mark Grant 9,217,917 - Hsiao , et al. December 22, 2 | 2015-12-22 |
N/P MOS FinFET performance enhancement by specific orientation surface Grant 9,209,304 - Hsiao , et al. December 8, 2 | 2015-12-08 |
Fin sidewall removal to enlarge epitaxial source/drain volume Grant 9,159,812 - Hsiao , et al. October 13, 2 | 2015-10-13 |
Device Having Sloped Gate Profile and Method of Manufacture App 20150287798 - Hsiao; Ru-Shang ;   et al. | 2015-10-08 |
Fin Sidewall Removal To Enlarge Epitaxial Source/drain Volume App 20150279975 - Hsiao; Ru-Shang ;   et al. | 2015-10-01 |
Structure and Method for Semiconductor Device App 20150263168 - Hsiao; Ru-Shang ;   et al. | 2015-09-17 |
Sandwich Epi Channel For Device Enhancement App 20150263092 - Hsiao; Ru-Shang ;   et al. | 2015-09-17 |
Device Boost By Quasi-finfet App 20150263136 - Hsiao; Ru-Shang ;   et al. | 2015-09-17 |
Air-gap Scheme For Beol Process App 20150262929 - Hsiao; Ru-Shang ;   et al. | 2015-09-17 |
Air-gap Offset Spacer In Finfet Structure App 20150263122 - Hsiao; Ru-Shang ;   et al. | 2015-09-17 |
Re-crystallization For Boosting Stress In Mos Device App 20150243526 - Hsiao; Ru-Shang ;   et al. | 2015-08-27 |
Shallow Trench Isolation Structure App 20150243653 - Hsiao; Ru-Shang ;   et al. | 2015-08-27 |
Three-Direction Alignment Mark App 20150241768 - Hsiao; Ru-Shang ;   et al. | 2015-08-27 |
Dual Vertical Channel App 20150236094 - Hsiao; Ru-Shang ;   et al. | 2015-08-20 |
Modified Channel Position To Suppress Hot Carrier Injection In Finfets App 20150228731 - Hsiao; Ru-Shang ;   et al. | 2015-08-13 |
N/p Mos Finfet Performance Enhancement By Specific Orientation Surface App 20150228794 - Hsiao; Ru-Shang ;   et al. | 2015-08-13 |
Mechanism For Forming Semiconductor Device With Gate App 20150129987 - JENG; Jung-Chi ;   et al. | 2015-05-14 |
Mechanism For Forming Gate App 20150129940 - JENG; Jung-Chi ;   et al. | 2015-05-14 |
Local oxidation of silicon processes with reduced lateral oxidation Grant 8,778,717 - Hsiao , et al. July 15, 2 | 2014-07-15 |
Stress Engineering To Reduce Dark Current Of Cmos Image Sensors App 20140001523 - HSIAO; Ru-Shang ;   et al. | 2014-01-02 |
Stress engineering to reduce dark current of CMOS image sensors Grant 8,546,860 - Hsiao , et al. October 1, 2 | 2013-10-01 |
Sensor element isolation in a backside illuminated image sensor Grant 8,389,377 - Hsiao , et al. March 5, 2 | 2013-03-05 |
Stress Engineering To Reduce Dark Current Of Cmos Image Sensors App 20120248515 - HSIAO; Ru-Shang ;   et al. | 2012-10-04 |
Stress engineering to reduce dark current of CMOS image sensors Grant 8,216,905 - Hsiao , et al. July 10, 2 | 2012-07-10 |
Semiconductor device with localized stressor Grant 8,158,474 - Hsiao , et al. April 17, 2 | 2012-04-17 |
Stress Engineering To Reduce Dark Current Of Cmos Image Sensors App 20110260223 - HSIAO; Ru-Shang ;   et al. | 2011-10-27 |
Sensor Element Isolation In A Backside Illuminated Image Sensor App 20110241152 - Hsiao; Ru-Shang ;   et al. | 2011-10-06 |
Local Oxidation of Silicon Processes with Reduced Lateral Oxidation App 20110230002 - Hsiao; Ru-Shang ;   et al. | 2011-09-22 |
Semiconductor Device With Localized Stressor App 20100330755 - Hsiao; Ru-Shang ;   et al. | 2010-12-30 |
Semiconductor device with localized stressor Grant 7,825,477 - Hsiao , et al. November 2, 2 | 2010-11-02 |
Semiconductor Device with Localized Stressor App 20080258233 - Hsiao; Ru-Shang ;   et al. | 2008-10-23 |
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