| Patent | Date |
|---|
Computing In Memory Cell
App 20210397675 - Lin; Chih-Sheng ; et al. | 2021-12-23 |
Computation operator in memory and operation method thereof
Grant 11,145,356 - Tsai , et al. October 12, 2 | 2021-10-12 |
Computation Operator In Memory And Operation Method Thereof
App 20210257017 - Tsai; Fu-Cheng ; et al. | 2021-08-19 |
Impact ionization semiconductor device and manufacturing method thereof
Grant 11,031,510 - Hou , et al. June 8, 2 | 2021-06-08 |
Neuron Circuit And Artificial Neural Network Chip
App 20210150317 - Hou; Tuo-Hung ; et al. | 2021-05-20 |
Neural network processing system
Grant 10,902,317 - Hou , et al. January 26, 2 | 2021-01-26 |
Impact ionization semiconductor device and manufacturing method thereof
Grant 10,868,195 - Hou , et al. December 15, 2 | 2020-12-15 |
Impact Ionization Semiconductor Device And Manufacturing Method Thereof
App 20200119204 - Hou; Tuo-Hung ; et al. | 2020-04-16 |
Impact Ionization Semiconductor Device And Manufacturing Method Thereof
App 20200105943 - HOU; Tuo-Hung ; et al. | 2020-04-02 |
Impact ionization semiconductor device and manufacturing method thereof
Grant 10,510,903 - Hou , et al. Dec | 2019-12-17 |
Fabrication method for two-dimensional materials
Grant 10,428,427 - Hou , et al. October 1, 2 | 2019-10-01 |
Device And Method For Operating The Same
App 20190164042 - HOU; Tuo-Hung ; et al. | 2019-05-30 |
Resistive random access memory having charge trapping layer, manufacturing method thereof, and operation thereof
Grant 10,236,061 - Hou , et al. | 2019-03-19 |
Neural Network Processing System
App 20180330236 - HOU; Tuo-Hung ; et al. | 2018-11-15 |
Fabrication Method For Two-dimensional Materials
App 20180291508 - HOU; Tuo-Hung ; et al. | 2018-10-11 |
Self-rectifying RRAM cell structure having two resistive switching layers with different bandgaps and RRAM 3D crossbar array architecture
Grant 10,056,432 - Hou , et al. August 21, 2 | 2018-08-21 |
Impact Ionization Semiconductor Device And Manufacturing Method Thereof
App 20180151755 - HOU; Tuo-Hung ; et al. | 2018-05-31 |
Self-rectifying resistive random access memory cell structure
Grant 9,978,941 - Hou , et al. May 22, 2 | 2018-05-22 |
Resistive Random Access Memory, Manufacturing Method Thereof, And Operation Thereof
App 20180090207 - Hou; Tuo-Hung ; et al. | 2018-03-29 |
Resistive memory apparatus and a writing method thereof
Grant 9,715,931 - Hou , et al. July 25, 2 | 2017-07-25 |
Resistive Memory Apparatus And A Writing Method Thereof
App 20170125098 - Hou; Tuo-Hung ; et al. | 2017-05-04 |
FET device having a vertical channel in a 2D material layer
Grant 9,553,199 - Hou , et al. January 24, 2 | 2017-01-24 |
A Fet Device Having A Vertical Channel In A 2d Material Layer
App 20160190343 - Hou; Tuo-Hung ; et al. | 2016-06-30 |
Self-rectifying Resistive Random Access Memory Cell Structure
App 20160093802 - HOU; TUO-HUNG ; et al. | 2016-03-31 |
Self-rectifying Rram Cell Structure And Rram 3d Crossbar Array Architecture
App 20160064453 - HOU; Tuo-Hung ; et al. | 2016-03-03 |
Resistive memory apparatus and write-in method thereof
Grant 9,269,434 - Hou , et al. February 23, 2 | 2016-02-23 |
Self-rectifying RRAM cell structure and 3D crossbar array architecture thereof
Grant 9,059,391 - Hou , et al. June 16, 2 | 2015-06-16 |
Resistive Memory Apparatus And Write-in Method Thereof
App 20150146473 - Hou; Tuo-Hung ; et al. | 2015-05-28 |
Self-rectifying Rram Cell Structure And 3d Crossbar Array Architecture Thereof
App 20140158967 - HOU; Tuo-Hung ; et al. | 2014-06-12 |
Multi-bit resistive-switching memory cell and array
Grant 8,687,432 - Hou , et al. April 1, 2 | 2014-04-01 |
Non-volatile Memory Device And Array Thereof
App 20130248814 - Hou; Tuo-Hung ; et al. | 2013-09-26 |
Nonvolatile memory and methods for manufacturing the same with molecule-engineered tunneling barriers
Grant 8,542,540 - Kan , et al. September 24, 2 | 2013-09-24 |
Multi-bit Resistive-switching Memory Cell And Array
App 20130119340 - HOU; TUO-HUNG ; et al. | 2013-05-16 |
Nonvolatile Memory And Methods For Manufacturing The Same With Molecule-engineered Tunneling Barriers
App 20100246269 - Kan; Edwin C. ; et al. | 2010-09-30 |
High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
Grant 7,303,996 - Wang , et al. December 4, 2 | 2007-12-04 |
Method and structure for forming high-k gates
Grant 7,071,066 - Wang , et al. July 4, 2 | 2006-07-04 |
High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
App 20050074978 - Wang, Ming-Fang ; et al. | 2005-04-07 |
Method and structure for forming high-k gates
App 20050056900 - Wang, Ming-Fang ; et al. | 2005-03-17 |
Novel Layer Of High-k Inter-poly Dielectric
App 20040121534 - Lin, Yeou-Ming ; et al. | 2004-06-24 |
Layer of high-k inter-poly dielectric
Grant 6,753,224 - Lin , et al. June 22, 2 | 2004-06-22 |
| 