Hill; Chris W.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Hill; Chris W..The latest application filed is for "method of increasing deposition rate of silicon dioxide on a catalyst".

Company Profile

0.19.22

Hill; Chris W. - Boise ID
Hill; Chris W - Boise ID

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method of increasing deposition rate of silicon dioxide on a catalyst Grant 8,470,686 - Hill , et al. June 25, 2	2013-06-25
Method of Increasing Deposition Rate of Silicon Dioxide on a Catalyst App 20120202359 - Hill; Chris W. ; et al.	2012-08-09
Method of increasing deposition rate of silicon dioxide on a catalyst Grant 8,158,488 - Hill , et al. April 17, 2	2012-04-17
Method of increasing deposition rate of silicon dioxide on a catalyst Grant 8,110,891 - Hill , et al. February 7, 2	2012-02-07
Double-sided container capacitors using a sacrificial layer Grant 7,667,258 - Sandhu , et al. February 23, 2	2010-02-23
Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge Grant 7,470,632 - Hill , et al. December 30, 2	2008-12-30
Method of forming trench isolation in the fabrication of integrated circuitry Grant 7,429,541 - Derderian , et al. September 30, 2	2008-09-30
Method of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry Grant 7,361,614 - Derderian , et al. April 22, 2	2008-04-22
Double-sided container capacitors using a sacrificial layer Grant 7,329,576 - Sandhu , et al. February 12, 2	2008-02-12
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry Grant 7,250,378 - Derderian , et al. July 31, 2	2007-07-31
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry Grant 7,250,380 - Derderian , et al. July 31, 2	2007-07-31
Double-sided Container Capacitors Using A Sacrificial Layer App 20070117335 - Sandhu; Gurtej S. ; et al.	2007-05-24
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry Grant 7,157,385 - Derderian , et al. January 2, 2	2007-01-02
Inter-metal dielectric fill App 20060265868 - Rueger; Neal R. ; et al.	2006-11-30
Inter-metal Dielectric Fill App 20060246719 - Rueger; Neal R. ; et al.	2006-11-02
Methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and methods of forming trench isolation in the fabrication of integrated circuitry App 20060189159 - Derderian; Garo J. ; et al.	2006-08-24
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry App 20060189158 - Derderian; Garo J. ; et al.	2006-08-24
Method of depositing a silicon dioxide-comprising layer in the fabrication of integrated circuitry App 20060183347 - Derderian; Garo J. ; et al.	2006-08-17
Method of increasing deposition rate of silicon dioxide on a catalyst App 20060110936 - Hill; Chris W. ; et al.	2006-05-25
Double-sided container capacitors using a sacrificial layer App 20060046419 - Sandhu; Gurtej S. ; et al.	2006-03-02
Method of increasing deposition rate of silicon dioxide on a catalyst App 20060046518 - Hill; Chris W. ; et al.	2006-03-02
Inter-metal dielectric fill App 20060038293 - Rueger; Neal R. ; et al.	2006-02-23
Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge App 20060035471 - Hill; Chris W. ; et al.	2006-02-16
Methods of etching a contact opening over a node location on a semiconductor substrate App 20060024973 - Jost; Mark E. ; et al.	2006-02-02
Method of forming trench isolation in the fabrication of integrated circuitry App 20060008972 - Derderian; Garo J. ; et al.	2006-01-12
Methods of etching a contact opening over a node location on a semiconductor substrate Grant 6,982,228 - Jost , et al. January 3, 2	2006-01-03
Multi-layer dielectric and method of forming same App 20050266676 - Hill, Chris W.	2005-12-01
Multi-layer dielectric and method of forming same Grant 6,940,171 - Hill September 6, 2	2005-09-06
Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge Grant 6,930,058 - Hill , et al. August 16, 2	2005-08-16
Multi-layer dielectric and method of forming same Grant 6,905,956 - Hill June 14, 2	2005-06-14
Method of etching a contact opening Grant 6,828,252 - Jost , et al. December 7, 2	2004-12-07
Method of depositing a silicon dioxide comprising layer doped with at least one of P, B and Ge App 20040209484 - Hill, Chris W. ; et al.	2004-10-21
Method of etching a contact opening App 20040198061 - Jost, Mark E. ; et al.	2004-10-07
Method for filling structural gaps and integrated circuitry Grant 6,787,877 - Hill September 7, 2	2004-09-07
Chemical vapor deposition methods Grant 6,596,641 - Jost , et al. July 22, 2	2003-07-22
Method for filling gaps and integrated circuitry App 20030132502 - Hill, Chris W.	2003-07-17
Methods of etching a contact opening over a node location on a semiconductor substrate App 20030045111 - Jost, Mark E. ; et al.	2003-03-06
Chemical vapor deposition methods and methods of etching a contact opening over a node location on a semiconductor substrate App 20020123221 - Jost, Mark E. ; et al.	2002-09-05
Multi-layer dielectric and method of forming same App 20020119652 - Hill, Chris W.	2002-08-29
Multi-layer dielectric and method of forming same App 20020061643 - Hill, Chris W.	2002-05-23

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