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Patent applications and USPTO patent grants for Helava; Heikki I..The latest application filed is for "optically controlled power devices".
Patent | Date |
---|---|
Optically controlled power devices Grant 10,790,405 - Helava , et al. September 29, 2 | 2020-09-29 |
Optically Controlled Power Devices App 20190214520 - Helava; Heikki I. ;   et al. | 2019-07-11 |
Optically Controlled Power Devices App 20130334537 - Helava; Heikki I. ;   et al. | 2013-12-19 |
Tantalum based crucible App 20060174826 - Helava; Heikki I. ;   et al. | 2006-08-10 |
Tantalum based crucible Grant 7,056,383 - Helava , et al. June 6, 2 | 2006-06-06 |
Tantalum based crucible App 20050178315 - Helava, Heikki I. ;   et al. | 2005-08-18 |
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device Grant 6,890,809 - Karpov , et al. May 10, 2 | 2005-05-10 |
Apparatus for growing low defect density silicon carbide Grant 6,863,728 - Vodakov , et al. March 8, 2 | 2005-03-08 |
Apparatus for growing low defect density silicon carbide App 20030094132 - Vodakov, Yury Alexandrovich ;   et al. | 2003-05-22 |
Low defect density silicon carbide Grant 6,534,026 - Vodakov , et al. March 18, 2 | 2003-03-18 |
Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device App 20030049898 - Karpov, Sergey ;   et al. | 2003-03-13 |
Apparatus for growing low defect density silicon carbide Grant 6,508,880 - Vodakov , et al. January 21, 2 | 2003-01-21 |
Low defect density silicon carbide App 20020049129 - Vodakov, Yury Alexandrovich ;   et al. | 2002-04-25 |
Apparatus for growing low defect density silicon carbide App 20020038627 - Vodakov, Yury Alexandrovich ;   et al. | 2002-04-04 |
Method for growing low defect density silicon carbide App 20020023581 - Vodakov, Yury Alexandrovich ;   et al. | 2002-02-28 |
Imploding plasma device Grant 4,494,043 - Stallings , et al. January 15, 1 | 1985-01-15 |
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