Harame; David L.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Harame; David L..The latest application filed is for "extrinsic base doping for bipolar junction transistors".

Company Profile

4.91.87

Harame; David L. - Essex Junction VT
Harame; David L. - Mohegan Lake NY

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Extrinsic base doping for bipolar junction transistors Grant 11,152,467 - Camillo-Castillo , et al. October 19, 2	2021-10-19
Extrinsic base doping for bipolar junction transistors Grant 10,784,346 - Camillo-Castillo , et al. Sept	2020-09-22
Extrinsic Base Doping For Bipolar Junction Transistors App 20190341454 - Camillo-Castillo; Renata ; et al.	2019-11-07
Extrinsic Base Doping For Bipolar Junction Transistors App 20190341455 - Camillo-Castillo; Renata ; et al.	2019-11-07
Extrinsic base doping for bipolar junction transistors Grant 10,431,654 - Camillo-Castillo , et al. O	2019-10-01
Bipolar junction transistors with a combined vertical-lateral architecture Grant 10,014,397 - Jain , et al. July 3, 2	2018-07-03
Bipolar Junction Transistors With A Combined Vertical-lateral Architecture App 20180175180 - Jain; Vibhor ; et al.	2018-06-21
Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure Grant 9,758,365 - Harame , et al. September 12, 2	2017-09-12
Implementing Stress In A Bipolar Junction Transistor App 20170098699 - Camillo-Castillo; Renata ; et al.	2017-04-06
Implementing stress in a bipolar junction transistor Grant 9,608,096 - Camillo-Castillo , et al. March 28, 2	2017-03-28
Profile control over a collector of a bipolar junction transistor Grant 9,583,569 - Camillo-Castillo , et al. February 28, 2	2017-02-28
Self-aligned emitter-base bipolar junction transistor with reduced base resistance and base-collector capacitance Grant 9,570,564 - Alperstein , et al. February 14, 2	2017-02-14
Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness Grant 9,553,145 - Harame , et al. January 24, 2	2017-01-24
Extrinsic Base Doping For Bipolar Junction Transistors App 20160380055 - Camillo-Castillo; Renata ; et al.	2016-12-29
Field Effect Transistor (fet) With Self-aligned Double Gates On Bulk Silicon Substrate, Methods Of Forming, And Related Design Structures App 20160225917 - Adkisson; James W. ; et al.	2016-08-04
Bipolar Transistor With Extrinsic Base Region And Methods Of Fabrication App 20160190292 - Adkisson; James W. ; et al.	2016-06-30
Semiconductor devices with enhanced electromigration performance Grant 9,362,229 - Gambino , et al. June 7, 2	2016-06-07
Method of forming a bipolar transistor with maskless self-aligned emitter Grant 9,356,097 - Harame , et al. May 31, 2	2016-05-31
Self-aligned bipolar junction transistors Grant 9,349,845 - Harame , et al. May 24, 2	2016-05-24
Field effect transistor (FET) with self-aligned double gates on bulk silicon substrate, methods of forming, and related design structures Grant 9,343,589 - Adkisson , et al. May 17, 2	2016-05-17
Profile Control Over A Collector Of A Bipolar Junction Transistor App 20160104770 - Camillo-Castillo; Renata ; et al.	2016-04-14
Bipolar transistor with extrinsic base region and methods of fabrication Grant 9,312,370 - Adkisson , et al. April 12, 2	2016-04-12
Lateral Bipolar Junction Transistors On A Silicon-on-insulator Substrate With A Thin Device Layer Thickness App 20160064484 - Harame; David L. ; et al.	2016-03-03
Bipolar Junction Transistors With Reduced Epitaxial Base Facets Effect For Low Parasitic Collector-base Capacitance App 20160049503 - Camillo-Castillo; Renata ; et al.	2016-02-18
Self-aligned Emitter-base Bipolar Junction Transistor With Reduced Base Resistance And Base-collector Capacitance App 20160043203 - Alperstein; Deborah A. ; et al.	2016-02-11
Profile control over a collector of a bipolar junction transistor Grant 9,245,951 - Camillo-Castillo , et al. January 26, 2	2016-01-26
Bipolar junction transistors with reduced base-collector junction capacitance Grant 9,240,448 - Adkisson , et al. January 19, 2	2016-01-19
Junction field-effect transistor with raised source and drain regions formed by selective epitaxy Grant 9,236,499 - Chan , et al. January 12, 2	2016-01-12
Semiconductor fins on a trench isolation region in a bulk semiconductor substrate and a method of forming the semiconductor fins Grant 9,224,841 - Harame , et al. December 29, 2	2015-12-29
Methods of fabricating bipolar junction transistors with reduced epitaxial base facets effect for low parasitic collector-base capacitance Grant 9,219,128 - Camillo-Castillo , et al. December 22, 2	2015-12-22
Bipolar Transistor With Extrinsic Base Region And Methods Of Fabrication App 20150357447 - Adkisson; James W. ; et al.	2015-12-10
Integrated Semiconductor Devices With Single Crystalline Beam, Methods Of Manufacture And Design Structure App 20150344293 - HARAME; David L. ; et al.	2015-12-03
Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology Grant 9,202,900 - Adkisson , et al. December 1, 2	2015-12-01
Bipolar Junction Transistors With Reduced Base-collector Junction Capacitance App 20150311283 - Adkisson; James W. ; et al.	2015-10-29
Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure Grant 9,172,025 - Harame , et al. October 27, 2	2015-10-27
Bipolar junction transistor with multiple emitter fingers Grant 9,159,801 - Camillo-Castillo , et al. October 13, 2	2015-10-13
PNP bipolar junction transistor fabrication using selective epitaxy Grant 9,159,816 - Harame , et al. October 13, 2	2015-10-13
Integrated Semiconductor Devices With Single Crystalline Beam, Methods Of Manufacture And Design Structure App 20150249200 - HARAME; David L. ; et al.	2015-09-03
Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure Grant 9,105,751 - Harame , et al. August 11, 2	2015-08-11
Bipolar junction transistors with reduced base-collector junction capacitance Grant 9,093,491 - Adkisson , et al. July 28, 2	2015-07-28
Field Effect Transistor (fet) With Self-aligned Double Gates On Bulk Silicon Substrate, Methods Of Forming, And Related Design Structures App 20150206961 - Adkisson; James W. ; et al.	2015-07-23
Semiconductor Fins On A Trench Isolation Region In A Bulk Semiconductor Substrate And A Method Of Forming The Semiconductor Fins App 20150206746 - Harame; David L. ; et al.	2015-07-23
Integrated semiconductor devices with single crystalline beam, methods of manufacture and design structure Grant 9,059,396 - Harame , et al. June 16, 2	2015-06-16
Heterojunction bipolar transistor with epitaxial emitter stack to improve vertical scaling Grant 9,053,939 - Adam , et al. June 9, 2	2015-06-09
Semiconductor Devices With Enhanced Electromigration Performance App 20150035158 - GAMBINO; Jeffrey P. ; et al.	2015-02-05
Method To Bridge Extrinsic And Intrinsic Base By Selective Epitaxy In Bicmos Technology App 20150014747 - Adkisson; James W. ; et al.	2015-01-15
Pnp Bipolar Junction Transistor Fabrication Using Selective Epitaxy App 20150008562 - Harame; David L. ; et al.	2015-01-08
Self-aligned Bipolar Junction Transistors App 20150008558 - Harame; David L. ; et al.	2015-01-08
Bipolar Junction Transistor With Multiple Emitter Fingers App 20150008559 - Camillo-Castillo; Renata ; et al.	2015-01-08
Junction Field-effect Transistor With Raised Source And Drain Regions Formed By Selective Epitaxy App 20150008487 - Chan; Kevin K. ; et al.	2015-01-08
Self-aligned bipolar junction transistors Grant 8,927,381 - Harame , et al. January 6, 2	2015-01-06
Junction field-effect transistor with raised source and drain regions formed by selective epitaxy Grant 8,927,357 - Chan , et al. January 6, 2	2015-01-06
Method to bridge extrinsic and intrinsic base by selective epitaxy in BiCMOS technology Grant 8,927,379 - Adkisson , et al. January 6, 2	2015-01-06
PNP bipolar junction transistor fabrication using selective epitaxy Grant 8,921,194 - Harame , et al. December 30, 2	2014-12-30
Bipolar Transistor With Maskless Self-aligned Emitter App 20140374802 - Harame; David L. ; et al.	2014-12-25
Bipolar junction transistor with multiple emitter fingers Grant 8,916,446 - Camillo-Castillo , et al. December 23, 2	2014-12-23
Self-aligned emitter-base in advanced BiCMOS technology Grant 8,916,952 - Chan , et al. December 23, 2	2014-12-23
Method of manufacturing an enhanced electromigration performance hetero-junction bipolar transistor Grant 8,901,738 - Gambino , et al. December 2, 2	2014-12-02
Integrated circuit structure having air-gap trench isolation and related design structure Grant 8,872,305 - Camillo-Castillo , et al. October 28, 2	2014-10-28
Schottky barrier diodes with a guard ring formed by selective epitaxy Grant 8,871,600 - Harame , et al. October 28, 2	2014-10-28
Schottky Barrier Diodes With A Guard Ring Formed By Selective Epitaxy App 20140312453 - Harame; David L. ; et al.	2014-10-23
Self-aligned Bipolar Junction Transistors App 20140284758 - Harame; David L. ; et al.	2014-09-25
Local wiring for a bipolar junction transistor including a self-aligned emitter region Grant 8,841,750 - Harame , et al. September 23, 2	2014-09-23
Bipolar Junction Transistors With Reduced Epitaxial Base Facets Effect For Low Parasitic Collector-base Capacitance App 20140264341 - Camillo-Castillo; Renata ; et al.	2014-09-18
Collector-up Bipolar Junction Transistors In Bicmos Technology App 20140231878 - Adkisson; James W. ; et al.	2014-08-21
Collector-up Bipolar Junction Transistors In Bicmos Technology App 20140231877 - Adkisson; James W. ; et al.	2014-08-21
Collector-up bipolar junction transistors in BiCMOS technology Grant 8,796,149 - Adkisson , et al. August 5, 2	2014-08-05
Transistor having a monocrystalline center section and a polycrystalline outer section, and narrow in-substrate collector region for reduced base-collector junction capacitance Grant 8,786,051 - Adkisson , et al. July 22, 2	2014-07-22
Bipolar Junction Transistors With Reduced Base-collector Junction Capacitance App 20140151852 - Adkisson; James W. ; et al.	2014-06-05
Power sige heterojunction bipolar transistor (HBT) with improved drive current by strain compensation Grant 8,728,897 - Adam , et al. May 20, 2	2014-05-20
Semiconductor Devices With Enhanced Electromigration Performance App 20140131878 - Gambino; Jeffrey P. ; et al.	2014-05-15
SELF-ALIGNED EMITTER-BASE IN ADVANCED BiCMOS TECHNOLOGY App 20140131773 - Chan; Kevin K. ; et al.	2014-05-15
Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases Grant 8,716,837 - Camillo-Castillo , et al. May 6, 2	2014-05-06
Self-aligned emitter-base in advanced BiCMOS technology Grant 8,716,096 - Chan , et al. May 6, 2	2014-05-06
Bipolar junction transistor with a self-aligned emitter and base Grant 8,710,500 - Chan , et al. April 29, 2	2014-04-29
Method To Bridge Extrinsic And Intrinsic Base By Selective Epitaxy In Bicmos Technology App 20140084420 - Adkisson; James W. ; et al.	2014-03-27
Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistor Grant 8,673,726 - Harame , et al. March 18, 2	2014-03-18
Integrated Circuit Structure Having Air-gap Trench Isolation And Related Design Structure App 20140061727 - Camillo-Castillo; Renata A. ; et al.	2014-03-06
Tunable semiconductor device Grant 8,652,919 - Harame , et al. February 18, 2	2014-02-18
Local Wiring For A Bipolar Junction Transistor Including A Self-aligned Emitter Region App 20140021587 - Harame; David L. ; et al.	2014-01-23
Integrated Semiconductor Devices With Single Crystalline Beam, Methods Of Manufacture And Design Structure App 20140008741 - HARAME; David L. ; et al.	2014-01-09
Bipolar transistor with a raised collector pedestal for reduced capacitance Grant 8,610,174 - Adkisson , et al. December 17, 2	2013-12-17
Integrated circuit structure having air-gap trench isolation and related design structure Grant 8,603,889 - Camillo-Castillo , et al. December 10, 2	2013-12-10
Bipolar Junction Transistors With Reduced Base-collector Junction Capacitance App 20130277804 - Cheng; Peng ; et al.	2013-10-24
Integrated Circuit Structure Having Air-gap Trench Isolation And Related Design Structure App 20130256758 - Camillo-Castillo; Renata A. ; et al.	2013-10-03
Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor Grant 8,546,230 - Adkisson , et al. October 1, 2	2013-10-01
Methods of manufacturing integrated semiconductor devices with single crystalline beam Grant 8,546,240 - Harame , et al. October 1, 2	2013-10-01
Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases Grant 8,536,012 - Camillo-Castillo , et al. September 17, 2	2013-09-17
Transistor Having A Narrow In-substrate Collector Region For Reduced Base-collector Junction Capacitance And A Method Of Forming The Transistor App 20130214275 - Adkisson; James W. ; et al.	2013-08-22
Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the transistor Grant 8,513,084 - Harame , et al. August 20, 2	2013-08-20
Methods of fabricating a bipolar junction transistor with a self-aligned emitter and base Grant 8,492,237 - Chan , et al. July 23, 2	2013-07-23
Power Sige Heterojunction Bipolar Transistor (hbt) With Improved Drive Current By Strain Compensation App 20130168820 - ADAM; Thomas N. ; et al.	2013-07-04
Bipolar Junction Transistors With A Link Region Connecting The Intrinsic And Extrinsic Bases App 20130147017 - Camillo-Castillo; Renata ; et al.	2013-06-13
Transistor Structure With A Sidewall-defined Intrinsic Base To Extrinsic Base Link-up Region And Method Of Forming The Transistor App 20130149832 - Harame; David L. ; et al.	2013-06-13
SELF-ALIGNED EMITTER-BASE IN ADVANCED BiCMOS TECHNOLOGY App 20130146947 - Chan; Kevin K. ; et al.	2013-06-13
Bipolar Junction Transistor With A Self-aligned Emitter And Base App 20130140566 - Chan; Kevin K. ; et al.	2013-06-06
Bipolar Transistor With A Raised Collector Pedastal For Reduced Capacitance And A Method Of Forming The Transistor App 20130134483 - Adkisson; James W. ; et al.	2013-05-30
Tunable Semiconductor Device App 20130130462 - Harame; David L. ; et al.	2013-05-23
Heterojunction Bipolar Transistor With Epitaxial Emitter Stack To Improve Vertical Scaling App 20130126944 - Adam; Thomas N. ; et al.	2013-05-23
Integrated Semiconductor Devices With Single Crystalline Beam, Methods Of Manufacture And Design Structure App 20130119490 - HARAME; David L. ; et al.	2013-05-16
Schottky Barrier Diodes With a Guard Ring Formed by Selective Epitaxy App 20130119505 - Harame; David L. ; et al.	2013-05-16
Bipolar Transistor With A Collector Having A Protected Outer Edge Portion For Reduced Based-collector Junction Capacitance And A Method Of Forming The Transistor App 20130119434 - ADKISSON; JAMES W. ; et al.	2013-05-16
Junction Field-effect Transistor With Raised Source And Drain Regions Formed By Selective Epitaxy App 20130119442 - Chan; Kevin K. ; et al.	2013-05-16
Integrated Semiconductor Devices With Single Crystalline Beam, Methods Of Manufacture And Design Structure App 20130122627 - HARAME; David L. ; et al.	2013-05-16
Pnp Bipolar Junction Transistor Fabrication Using Selective Epitaxy App 20130119516 - Harame; David L. ; et al.	2013-05-16
Bipolar Junction Transistor With Multiple Emitter Fingers App 20130119508 - Camillo-Castillo; Renata ; et al.	2013-05-16
Transistor structure with a sidewall-defined intrinsic base to extrinsic base link-up region and method of forming the structure Grant 8,405,186 - Camillo-Castillo , et al. March 26, 2	2013-03-26
Bipolar Junction Transistors With A Link Region Connecting The Intrinsic And Extrinsic Bases App 20130009280 - Camillo-Castillo; Renata ; et al.	2013-01-10
Bipolar Junction Transistor With A Self-aligned Emitter And Base App 20120228611 - Chan; Kevin K. ; et al.	2012-09-13
Transistor Structure With A Sidewall-defined Intrinsic Base To Extrinsic Base Link-up Region And Method Of Forming The Transistor App 20110312147 - Harame; David L. ; et al.	2011-12-22
Transistor Structure With A Sidewall-defined Intrinsic Base To Extrinsic Base Link-up Region And Method Of Forming The Structure App 20110309471 - Camillo-Castillo; Renata ; et al.	2011-12-22
Structure and method for performance improvement in vertical bipolar transistors Grant 7,932,155 - Dunn , et al. April 26, 2	2011-04-26
Structure for performance improvement in vertical bipolar transistors Grant 7,898,061 - Dunn , et al. March 1, 2	2011-03-01
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Grant 7,713,829 - Chu , et al. May 11, 2	2010-05-11
INCORPORATION OF CARBON IN SILICON/SILICON GERMANIUM EPITAXIAL LAYER TO ENHANCE YIELD FOR Si-Ge BIPOLAR TECHNOLOGY App 20080124881 - Chu; Jack Ooh ; et al.	2008-05-29
Structure And Method For Performance Improvement In Vertical Bipolar Transistors App 20080014705 - DUNN; James S. ; et al.	2008-01-17
Structure And Method For Performance Improvement In Vertical Bipolar Transistors App 20070200201 - DUNN; James S. ; et al.	2007-08-30
Structure and method for performance improvement in vertical bipolar transistors Grant 7,262,484 - Dunn , et al. August 28, 2	2007-08-28
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same Grant 7,253,096 - Khater , et al. August 7, 2	2007-08-07
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Grant 7,173,274 - Chu , et al. February 6, 2	2007-02-06
Structure And Method For Performance Improvement In Vertical Bipolar Transistors App 20060249813 - Dunn; James S. ; et al.	2006-11-09
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same App 20060081934 - Khater; Marwan H. ; et al.	2006-04-20
Bipolar transistor having raised extrinsic base with selectable self-alignment and methods of forming same Grant 7,002,221 - Khater , et al. February 21, 2	2006-02-21
Diffused extrinsic base and method for fabrication Grant 6,900,519 - Cantell , et al. May 31, 2	2005-05-31
Diffused extrinsic base and method for fabrication Grant 6,869,854 - Cantell , et al. March 22, 2	2005-03-22
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology App 20050054171 - Chu, Jack Oon ; et al.	2005-03-10
Bipolar Transistor Having Raised Extrinsic Base With Selectable Self-alignment And Methods Of Forming Same App 20050048735 - Khater, Marwan H. ; et al.	2005-03-03
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology Grant 6,815,802 - Chu , et al. November 9, 2	2004-11-09
Epitaxial base bipolar transistor with raised extrinsic base Grant 6,812,545 - Dunn , et al. November 2, 2	2004-11-02
Diffused extrinsic base and method for fabrication App 20040014271 - Cantell, Marc W. ; et al.	2004-01-22
Epitaxial base bipolar transistor with raised extrinsic base App 20030201517 - Dunn, James Stuart ; et al.	2003-10-30
Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base Grant 6,617,220 - Dunn , et al. September 9, 2	2003-09-09
Epitaxial base bipolar transistor with raised extrinsic base App 20020132438 - Dunn, James Stuart ; et al.	2002-09-19
Method for epitaxial bipolar BiCMOS Grant 6,448,124 - Coolbaugh , et al. September 10, 2	2002-09-10
Incorporation of carbon in silicon/silicon germanium epitaxial layer to enhance yield for Si-Ge bipolar technology App 20020121676 - Chu, Jack Oon ; et al.	2002-09-05
Incorporation Of Carbon In Silicon/silicon Germanium Epitaxial Layer To Enhance Yield For Si-ge Bipolar Technology App 20020100917 - Chu, Jack Oon ; et al.	2002-08-01
Optimized reachthrough implant for simultaneously forming an MOS capacitor App 20020093039 - Coolbaugh, Douglas D. ; et al.	2002-07-18
Method For Epitaxial Bipolar Bicmos App 20020076874 - COOLBAUGH, DOUGLAS D. ; et al.	2002-06-20
Method for controlling silicon etch depth Grant 5,395,769 - Arienzo , et al. March 7, 1	1995-03-07
Graded bandgap single-crystal emitter heterojunction bipolar transistor Grant 5,352,912 - Crabbe , et al. October 4, 1	1994-10-04
Isolation technique for silicon germanium devices Grant 5,266,813 - Comfort , et al. November 30, 1	1993-11-30
Bipolar transistor with ultra-thin epitaxial base and method of fabricating same Grant 5,101,256 - Harame , et al. March 31, 1	1992-03-31
Complementary bipolar transistor structure and method for manufacture Grant 4,997,776 - Harame , et al. March 5, 1	1991-03-05
Complementary transistor structure and method for manufacture Grant 4,951,115 - Harame , et al. August 21, 1	1990-08-21
Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate Grant 4,889,819 - Davari , et al. December 26, 1	1989-12-26