Gupta; Avinash K.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Gupta; Avinash K..The latest application filed is for "large diameter silicon carbide single crystals and apparatus and method of manufacture thereof".

Company Profile

5.22.19

Gupta; Avinash K. - Basking Ridge NJ

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Large diameter silicon carbide single crystals and apparatus and method of manufacture thereof Grant 11,035,054 - Xu , et al. June 15, 2	2021-06-15
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof Grant RE48,378 - Zwieback , et al. January 5, 2	2021-01-05
Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof App 20190323145 - Xu; Xueping ; et al.	2019-10-24
SiC Single Crystal Sublimation Growth Apparatus App 20190249332 - Gupta; Avinash K. ; et al.	2019-08-15
SiC single crystal sublimation growth method and apparatus Grant 10,294,584 - Gupta , et al.	2019-05-21
Large Diameter Silicon Carbide Single Crystals and Apparatus and Method of Manufacture Thereof App 20170321345 - Xu; Xueping ; et al.	2017-11-09
Large diameter, high quality SiC single crystals, method and apparatus Grant RE46,315 - Zwieback , et al. February 21, 2	2017-02-21
Method for synthesizing ultrahigh-purity silicon carbide Grant 9,388,509 - Zwieback , et al. July 12, 2	2016-07-12
Vanadium doped SiC single crystals and method thereof Grant 9,322,110 - Zwieback , et al. April 26, 2	2016-04-26
Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof Grant 9,090,989 - Zwieback , et al. July 28, 2	2015-07-28
Intra-cavity gettering of nitrogen in SiC crystal growth Grant 9,017,629 - Zwieback , et al. April 28, 2	2015-04-28
Silicon carbide with low nitrogen content and method for preparation Grant 8,858,709 - Zwieback , et al. October 14, 2	2014-10-14
Vanadium Doped SiC Single Crystals and Method Thereof App 20140234194 - Zwieback; Ilya ; et al.	2014-08-21
Large diameter, high quality SiC single crystals, method and apparatus Grant 8,741,413 - Zwieback , et al. June 3, 2	2014-06-03
Vanadium Compensated, SI SiC Single Crystals of NU and PI Type and the Crystal Growth Process Thereof App 20130320275 - Zwieback; Ilya ; et al.	2013-12-05
"Method for Synthesizing Ultrahigh-Purity Silicon Carbide" App 20130309496 - Zwieback; Ilya ; et al.	2013-11-21
Large Diameter, High Quality SiC Single Crystals, Method and Apparatus App 20130280466 - Zwieback; Ilya ; et al.	2013-10-24
Halosilane assisted PVT growth of SiC Grant 8,512,471 - Zwieback , et al. August 20, 2	2013-08-20
Silicon carbide single crystals with low boron content Grant 8,361,227 - Zwieback , et al. January 29, 2	2013-01-29
Guided diameter SiC sublimation growth with multi-layer growth guide Grant 8,313,720 - Zwieback , et al. November 20, 2	2012-11-20
Sublimation Growth Of Sic Single Crystals App 20120285370 - Gupta; Avinash K. ; et al.	2012-11-15
Halosilane Assisted PVT Growth of SiC App 20120225004 - Zwieback; Ilya ; et al.	2012-09-06
System for forming SiC crystals having spatially uniform doping impurities Grant 8,216,369 - Gupta , et al. July 10, 2	2012-07-10
Sic Single Crystal Sublimation Growth Method And Apparatus App 20120103249 - Gupta; Avinash K. ; et al.	2012-05-03
SiC Crystals Having Spatially Uniform Doping Impurities App 20110303884 - Gupta; Avinash K. ; et al.	2011-12-15
Method of annealing a sublimation grown crystal Grant 7,767,022 - Gupta , et al. August 3, 2	2010-08-03
GUIDED DIAMETER SiC SUBLIMATION GROWTH WITH MULTI-LAYER GROWTH GUIDE App 20100061914 - Zwieback; Ilya ; et al.	2010-03-11
System for Forming SiC Crystals Having Spatially Uniform Doping Impurities App 20100018455 - Gupta; Avinash K. ; et al.	2010-01-28
Method of and system for forming SiC crystals having spatially uniform doping impurities Grant 7,608,524 - Gupta , et al. October 27, 2	2009-10-27
Intra-Cavity Gettering of Nitrogen in Sic Crystal Growth App 20090169459 - Zwieback; Ilya ; et al.	2009-07-02
Reduction of carbon inclusions in sublimation grown SiC single crystals Grant 7,547,360 - Gupta , et al. June 16, 2	2009-06-16
Stabilizing 4H Polytype During Sublimation Growth Of SiC Single Crystals App 20090053125 - Gupta; Avinash K. ; et al.	2009-02-26
Low-Doped Semi-Insulating Sic Crystals and Method App 20080190355 - Chen; Jihong ; et al.	2008-08-14
Reduction of carbon inclusions in sublimation grown SiC single crystals App 20080115719 - Gupta; Avinash K. ; et al.	2008-05-22
Silicon carbide single crystals with low boron content App 20080072817 - Zwieback; Ilya ; et al.	2008-03-27
Method of and system for forming SiC crystals having spatially uniform doping impuritites App 20060243984 - Gupta; Avinash K. ; et al.	2006-11-02

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