Guo; Ted

Patent Applications and Registrations

Patent applications and USPTO patent grants for Guo; Ted.The latest application filed is for "gas line weldment design and process for cvd aluminum".

Company Profile

0.31.13

Guo; Ted - Palo Alto CA
Guo; Ted - Mountain View CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Gas line weldment design and process for CVD aluminum Grant 9,593,417 - Lee , et al. March 14, 2	2017-03-14
Sputtering target having increased life and sputtering uniformity Grant 8,968,536 - Allen , et al. March 3, 2	2015-03-03
Gas Line Weldment Design And Process For Cvd Aluminum App 20140053776 - LEE; Wei Ti ; et al.	2014-02-27
Gas line weldment design and process for CVD aluminum Grant 8,535,443 - Lee , et al. September 17, 2	2013-09-17
Aluminum contact integration on cobalt silicide junction Grant 7,867,900 - Lee , et al. January 11, 2	2011-01-11
Unique passivation technique for a CVD blocker plate to prevent particle formation Grant 7,857,947 - Ritchie , et al. December 28, 2	2010-12-28
Deposition processes for titanium nitride barrier and aluminum Grant 7,824,743 - Lee , et al. November 2, 2	2010-11-02
Deposition Processes For Titanium Nitride Barrier And Aluminum App 20090087585 - LEE; WEI TI ; et al.	2009-04-02
Aluminum Contact Integration On Cobalt Silicide Junction App 20090087983 - LEE; WEI TI ; et al.	2009-04-02
Sputtering Target Having Increased Life And Sputtering Uniformity App 20080308416 - Allen; Adolph Miller ; et al.	2008-12-18
Aluminum sputtering while biasing wafer Grant 7,378,002 - Lee , et al. May 27, 2	2008-05-27
Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry Grant 7,186,319 - Yang , et al. March 6, 2	2007-03-06
Aluminum sputtering while biasing wafer App 20070045103 - Lee; Wei Ti ; et al.	2007-03-01
Unique Passivation Technique For A Cvd Blocker Plate To Prevent Particle Formation App 20070022952 - Ritchie; Alan A. ; et al.	2007-02-01
Gas Line Weldment Design And Process For Cvd Aluminum App 20070023144 - Lee; Wei Ti ; et al.	2007-02-01
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug Grant 7,112,528 - Chen , et al. September 26, 2	2006-09-26
Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry App 20060144703 - Yang; Hong S. ; et al.	2006-07-06
Low temperature integrated metallization process and apparatus Grant 6,743,714 - Mosely , et al. June 1, 2	2004-06-01
Low temperature integrated metallization process and apparatus Grant 6,726,776 - Mosely , et al. April 27, 2	2004-04-27
CVD-PVD deposition process Grant 6,716,733 - Lee , et al. April 6, 2	2004-04-06
CVD-PVD deposition process App 20030228746 - Lee, Wei Ti ; et al.	2003-12-11
Plasma-enhanced chemical vapor deposition of a metal nitride layer Grant 6,656,831 - Lee , et al. December 2, 2	2003-12-02
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug App 20030161943 - Chen, Liang-Yuh ; et al.	2003-08-28
Hole-filling technique using CVD aluminum and PVD aluminum integration Grant 6,605,531 - Guo , et al. August 12, 2	2003-08-12
Liner materials Grant 6,528,180 - Lee , et al. March 4, 2	2003-03-04
Method of selective formation of a barrier layer for a contact level via Grant 6,518,176 - Guo , et al. February 11, 2	2003-02-11
Single step process for blanket-selective CVD aluminum deposition Grant 6,458,684 - Guo , et al. October 1, 2	2002-10-01
Low temperature integrated metallization process and apparatus App 20020102842 - Mosley, Roderick Craig ; et al.	2002-08-01
Single step process for blanket-selective cvd aluminum deposition App 20020068427 - Guo, Ted ; et al.	2002-06-06
Contact Level Via And Method Of Selective Formation Of A Barrier Layer For A Contact Level Via App 20010001503 - GUO, TED ; et al.	2001-05-24
Dual damascene metallization Grant 6,207,222 - Chen , et al. March 27, 2	2001-03-27
Metallization process and method Grant 6,169,030 - Naik , et al. January 2, 2	2001-01-02
Low temperature integrated via and trench fill process and apparatus Grant 6,139,697 - Chen , et al. October 31, 2	2000-10-31
Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer Grant 6,120,844 - Chen , et al. September 19, 2	2000-09-19
In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization Grant 6,110,828 - Guo , et al. August 29, 2	2000-08-29
Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers Grant 6,079,354 - Guo , et al. June 27, 2	2000-06-27
Integrated nitrogen-treated titanium layer to prevent interaction of titanium and aluminum Grant 6,080,665 - Chen , et al. June 27, 2	2000-06-27
Single step process for blanket-selective CVD aluminum deposition Grant 6,077,781 - Guo , et al. June 20, 2	2000-06-20
Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer Grant 6,066,358 - Guo , et al. May 23, 2	2000-05-23
Dual damascene metallization Grant 5,989,623 - Chen , et al. November 23, 1	1999-11-23
Low temperature integrated metallization process and apparatus Grant 5,877,087 - Mosely , et al. March 2, 1	1999-03-02
Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers Grant 5,763,010 - Guo , et al. June 9, 1	1998-06-09

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