loadpatents
Patent applications and USPTO patent grants for Grover; Raymond J..The latest application filed is for "semiconductor device having an edge termination structure and method of manufacture thereof".
Patent | Date |
---|---|
Semiconductor device having an edge termination structure and method of manufacture thereof Grant 8,344,448 - Grover January 1, 2 | 2013-01-01 |
Semiconductor Device Having an Edge Termination Structure and Method of Manufacture Thereof App 20110291185 - Grover; Raymond J. | 2011-12-01 |
Integrated Half-Bridge Power Circuit App 20090079272 - Ludikhuize; Adrianus Willem ;   et al. | 2009-03-26 |
Power semiconductor devices Grant 7,504,690 - Kelly , et al. March 17, 2 | 2009-03-17 |
Integrated half-bridge power circuit Grant 7,459,750 - Ludikhuize , et al. December 2, 2 | 2008-12-02 |
Termination Structures For Semiconductor Devices and the Manufacture Thereof App 20080116520 - Grover; Raymond J. | 2008-05-22 |
Trench-gate semiconductor devices and the manufacture thereof App 20070181939 - Huang; Eddie ;   et al. | 2007-08-09 |
Trench-gate semiconductor devices Grant 7,122,860 - Peake , et al. October 17, 2 | 2006-10-17 |
Method for manufacturing trench gate semiconductor device Grant 7,122,433 - Peake , et al. October 17, 2 | 2006-10-17 |
Integrated half-bridge power circuit App 20060054967 - Ludikhuize; Adrianus Willem ;   et al. | 2006-03-16 |
Power semiconductor devices App 20060001084 - Kelly; Brendan P. ;   et al. | 2006-01-05 |
Trench-gate semiconductor devices App 20050173758 - Peake, Steven T. ;   et al. | 2005-08-11 |
Manufacture of semiconductor devices with Schottky barriers Grant 6,825,105 - Grover , et al. November 30, 2 | 2004-11-30 |
Trench-gate semiconductor devices and their manufacture Grant 6,800,900 - Peake , et al. October 5, 2 | 2004-10-05 |
Trench-gate semiconductor devices and their manufacture App 20040188775 - Peake, Steven T. ;   et al. | 2004-09-30 |
Self-powered synchronous rectifiers Grant 6,747,880 - Grover June 8, 2 | 2004-06-08 |
Method of making a semiconductor wafer having a depletable multiple-region semiconductor material Grant 6,703,292 - Grover March 9, 2 | 2004-03-09 |
Field effect transistor structure and method of manufacture Grant 6,677,642 - Peake , et al. January 13, 2 | 2004-01-13 |
Trench-gate semiconductor devices having a channel-accommodating region and their methods of manufacture Grant 6,660,591 - Peake , et al. December 9, 2 | 2003-12-09 |
Trench-gate semiconductor devices and their manufacture Grant 6,534,367 - Peake , et al. March 18, 2 | 2003-03-18 |
Trench-gate semiconductor devices and their manufacture App 20030047779 - Peake, Steven T. ;   et al. | 2003-03-13 |
Manufacture of semiconductor devices with schottky barriers App 20030022474 - Grover, Raymond J. ;   et al. | 2003-01-30 |
Trench-gate semiconductor devices and their manufacture App 20020160573 - Peake, Steven T. ;   et al. | 2002-10-31 |
Trench-gate semiconductor devices and their manufacture App 20020160557 - Peake, Steven T. ;   et al. | 2002-10-31 |
Synchronous rectifiers App 20020141214 - Grover, Raymond J. | 2002-10-03 |
Field effect transistor structure and method of manufacture App 20020137318 - Peake, Steven T. ;   et al. | 2002-09-26 |
Switch circuit and semiconductor switch, for battery-powered equipment Grant 6,404,261 - Grover , et al. June 11, 2 | 2002-06-11 |
Semiconductor device assemblies and circuits Grant 6,055,148 - Grover April 25, 2 | 2000-04-25 |
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