Patent | Date |
---|
Silicon And Silicon Germanium Nanowire Structures App 20210226006 - Kuhn; Kelin J. ;   et al. | 2021-07-22 |
Fins For Metal Oxide Semiconductor Device Structures App 20210210514 - GILES; Martin D. ;   et al. | 2021-07-08 |
Silicon and silicon germanium nanowire structures Grant 10,991,799 - Kuhn , et al. April 27, 2 | 2021-04-27 |
Fins for metal oxide semiconductor device structures Grant 10,985,184 - Giles , et al. April 20, 2 | 2021-04-20 |
Semiconductor device having metallic source and drain regions Grant 10,847,653 - Giles , et al. November 24, 2 | 2020-11-24 |
Silicon And Silicon Germanium Nanowire Structures App 20200227520 - KUHN; Kelin J. ;   et al. | 2020-07-16 |
Nanowire Structures Having Non-discrete Source And Drain Regions App 20200152797 - CEA; Stephen M. ;   et al. | 2020-05-14 |
Silicon and silicon germanium nanowire structures Grant 10,636,871 - Kuhn , et al. | 2020-04-28 |
Nanowire structures having non-discrete source and drain regions Grant 10,580,899 - Cea , et al. | 2020-03-03 |
Methods For Forming Fins For Metal Oxide Semiconductor Device Structures App 20170200744 - Giles; Martin D. ;   et al. | 2017-07-13 |
Non-planar device having uniaxially strained semiconductor body and method of making same Grant 9,680,013 - Cea , et al. June 13, 2 | 2017-06-13 |
Nanowire Structures Having Non-discrete Source And Drain Regions App 20170141239 - CEA; Stephen M. ;   et al. | 2017-05-18 |
Silicon And Silicon Germanium Nanowire Structures App 20170133462 - KUHN; Kelin J. ;   et al. | 2017-05-11 |
Semiconductor Device Having Metallic Source And Drain Regions App 20170125591 - GILES; Martin D. ;   et al. | 2017-05-04 |
Methods for forming fins for metal oxide semiconductor device structures Grant 9,607,987 - Giles , et al. March 28, 2 | 2017-03-28 |
Silicon and silicon germanium nanowire structures Grant 9,595,581 - Kuhn , et al. March 14, 2 | 2017-03-14 |
Semiconductor device having metallic source and drain regions Grant 9,583,487 - Giles , et al. February 28, 2 | 2017-02-28 |
Nanowire structures having non-discrete source and drain regions Grant 9,564,522 - Cea , et al. February 7, 2 | 2017-02-07 |
Nanowire Structures Having Non-discrete Source And Drain Regions App 20150325648 - CEA; Stephen M. ;   et al. | 2015-11-12 |
Silicon And Silicon Germanium Nanowire Structures App 20150303258 - KUHN; Kelin J. ;   et al. | 2015-10-22 |
Silicon and silicon germanium nanowire structures Grant 9,129,829 - Kuhn , et al. September 8, 2 | 2015-09-08 |
Nanowire structures having non-discrete source and drain regions Grant 9,087,863 - Cea , et al. July 21, 2 | 2015-07-21 |
Silicon And Silicon Germanium Nanowire Structures App 20140326952 - KUHN; Kelin J. ;   et al. | 2014-11-06 |
Silicon and silicon germanium nanowire structures Grant 8,753,942 - Kuhn , et al. June 17, 2 | 2014-06-17 |
Methods For Forming Fins For Metal Oxide Semiconductor Device Structures App 20140151814 - Giles; Martin D. ;   et al. | 2014-06-05 |
Non-Planar Device Having Uniaxially Strained Semiconductor Body and Method of Making Same App 20140070273 - Cea; Stephen M. ;   et al. | 2014-03-13 |
Nanowire Structures Having Non-discrete Source And Drain Regions App 20140042386 - Cea; Stephen M. ;   et al. | 2014-02-13 |
Semiconductor Device Having Metallic Source And Drain Regions App 20140035059 - Giles; Martin D. ;   et al. | 2014-02-06 |
Non-planar device having uniaxially strained semiconductor body and method of making same Grant 8,558,279 - Cea , et al. October 15, 2 | 2013-10-15 |
Methods and apparatus to reduce layout based strain variations in non-planar transistor structures Grant 8,487,348 - Cea , et al. July 16, 2 | 2013-07-16 |
Methods And Apparatus To Reduce Layout Based Strain Variations In Non-planar Transistor Structures App 20120305990 - Cea; Stephen M ;   et al. | 2012-12-06 |
Methods and apparatus to reduce layout based strain variations in non-planar transistor structures Grant 8,269,283 - Cea , et al. September 18, 2 | 2012-09-18 |
Silicon And Silicon Germanium Nanowire Structures App 20120138886 - Kuhn; Kelin J. ;   et al. | 2012-06-07 |
Non-planar device having uniaxially strained semiconductor body and method of making same App 20120074464 - Cea; Stephen M. ;   et al. | 2012-03-29 |
Methods and apparatus to reduce layout based strain variations in non-planar transistor structures App 20110147847 - Cea; Stephen M. ;   et al. | 2011-06-23 |
Multiple oxide thickness for a semiconductor device Grant 7,719,057 - Giles , et al. May 18, 2 | 2010-05-18 |
Transistor performance enhancement using engineered strains Grant 7,679,145 - He , et al. March 16, 2 | 2010-03-16 |
Systems And Methods To Increase Uniaxial Compressive Stress In Tri-Gate Transistors App 20090152589 - Rakshit; Titash ;   et al. | 2009-06-18 |
Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer App 20090096025 - Tolchinsky; Peter G. ;   et al. | 2009-04-16 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress App 20090075445 - Kavalieros; Jack ;   et al. | 2009-03-19 |
Multiple Oxide Thickness For A Semiconductor Device App 20090032872 - Giles; Martin D. ;   et al. | 2009-02-05 |
Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer Grant 7,473,614 - Tolchinsky , et al. January 6, 2 | 2009-01-06 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress Grant 7,470,972 - Kavalieros , et al. December 30, 2 | 2008-12-30 |
Gate-induced strain for MOS performance improvement Grant 7,452,764 - Hoffmann , et al. November 18, 2 | 2008-11-18 |
Insulation layer for silicon-on-insulator wafer App 20070063279 - Tolchinsky; Peter G. ;   et al. | 2007-03-22 |
Methods of forming stress enhanced PMOS structures App 20060226453 - Wang; Everett X. ;   et al. | 2006-10-12 |
Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress App 20060205167 - Kavalieros; Jack ;   et al. | 2006-09-14 |
Method and structure to decrease area capacitance within a buried insulator device Grant 7,091,560 - Stettler , et al. August 15, 2 | 2006-08-15 |
Method for manufacturing a silicon-on-Insulator (SOI) wafer with an etch stop layer App 20060102988 - Tolchinsky; Peter G. ;   et al. | 2006-05-18 |
Transistor performance enhancement using engineered strains App 20060043579 - He; Jun ;   et al. | 2006-03-02 |
Gate-induced strain for MOS performance improvement Grant 6,982,433 - Hoffman , et al. January 3, 2 | 2006-01-03 |
Gate-induced strain for MOS performance improvement App 20050167652 - Hoffmann, Thomas ;   et al. | 2005-08-04 |
Method and structure to decrease area capacitance within a buried insulator device App 20050130379 - Stettler, Mark A. ;   et al. | 2005-06-16 |
Method to form a structure to decrease area capacitance within a buried insulator device Grant 6,867,104 - Stettler , et al. March 15, 2 | 2005-03-15 |
Gate-induced strain for MOS performance improvement App 20040253776 - Hoffmann, Thomas ;   et al. | 2004-12-16 |
Method and structure to decrease area capacitance within a buried insulator device App 20040124467 - Stettler, Mark A. ;   et al. | 2004-07-01 |