loadpatents
name:-0.011554002761841
name:-0.012939929962158
name:-0.011803865432739
Fukunaga; Shunsuke Patent Filings

Fukunaga; Shunsuke

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fukunaga; Shunsuke.The latest application filed is for "trench semiconductor device layout configurations".

Company Profile
12.11.11
  • Fukunaga; Shunsuke - Saitama JP
  • Fukunaga; Shunsuke - Niiza JP
  • FUKUNAGA; Shunsuke - Niiza-shi JP
  • FUKUNAGA; Shunsuke - Saitama-Shi JP
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Trench semiconductor device layout configurations
Grant 11,245,006 - Dosev , et al. February 8, 2
2022-02-08
Semiconductor device
Grant 10,991,815 - Fukunaga , et al. April 27, 2
2021-04-27
Semiconductor device
Grant 10,892,359 - Fukunaga , et al. January 12, 2
2021-01-12
Trench Semiconductor Device Layout Configurations
App 20200127092 - Dosev; Dosi ;   et al.
2020-04-23
Trench semiconductor device layout configurations
Grant 10,580,861 - Dosev , et al.
2020-03-03
Vertical power MOSFET device having doped regions between insulated trenches and a junction arranged therebetween
Grant 10,573,741 - Fukunaga , et al. Feb
2020-02-25
Semiconductor Device
App 20200058778 - FUKUNAGA; Shunsuke ;   et al.
2020-02-20
Semiconductor Device
App 20190252543 - FUKUNAGA; Shunsuke ;   et al.
2019-08-15
Semiconductor device having improved trench and electrode structures
Grant 10,361,298 - Fukunaga , et al.
2019-07-23
Semiconductor device having improved edge trench, source electrode and gate electrode structures
Grant 10,312,363 - Fukunaga , et al.
2019-06-04
Semiconductor Device Having Through Hole, Source And Gate Electrode Structures
App 20190165097 - FUKUNAGA; Shunsuke ;   et al.
2019-05-30
Semiconductor Device Having Improved Trench And Electrode Structures
App 20190165158 - FUKUNAGA; Shunsuke ;   et al.
2019-05-30
Semiconductor Device Including Partitioning Layer Extending Between Gate Electrode And Source Electrode
App 20190148487 - FUKUNAGA; Shunsuke ;   et al.
2019-05-16
Semiconductor Device
App 20180337172 - Kondo; Taro ;   et al.
2018-11-22
Trench Semiconductor Device Layout Configurations
App 20180175146 - Dosev; Dosi ;   et al.
2018-06-21
Semiconductor Device Including Auxiliary Structure
App 20180175189 - FUKUNAGA; Shunsuke ;   et al.
2018-06-21
Semiconductor device
Grant 9,929,265 - Kondo , et al. March 27, 2
2018-03-27
Semiconductor device
Grant 9,825,027 - Fukunaga , et al. November 21, 2
2017-11-21
Semiconductor device
Grant 9,818,696 - Fukunaga , et al. November 14, 2
2017-11-14
High Voltage Vertical FPMOS Fets
App 20160372558 - FUKUNAGA; Shunsuke
2016-12-22
Trench Semiconductor Device Layout Configurations
App 20160247879 - Dosev; Dosi ;   et al.
2016-08-25
High voltage vertical FPMOS fets
Grant 9,391,194 - Fukunaga July 12, 2
2016-07-12

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