Fukae; Katsuya

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fukae; Katsuya.The latest application filed is for "atomic layer etching using acid halide".

Company Profile

1.3.7

Fukae; Katsuya - Gunma JP
FUKAE; Katsuya - Shibukawa Shibukawa-shi
Fukae; Katsuya - Shibukawa-shi JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Atomic layer etching using acid halide Grant 11,183,393 - Kato , et al. November 23, 2	2021-11-23
Method For Cleaning Semiconductor Production Chamber App 20210285100 - HABUKA; Hitoshi ; et al.	2021-09-16
Atomic Layer Etching Using Acid Halide App 20210287911 - KATO; Korehito ; et al.	2021-09-16
Dry Etching Method Or Dry Cleaning Method App 20210108311 - TAKAHASHI; Yoshinao ; et al.	2021-04-15
Processes and equipments for preparing F2-containing gases, as well as process and equipments for modifying the surfaces of articles Grant 7,919,141 - Tanioka , et al. April 5, 2	2011-04-05
Processes And Equipments For Preparing F2-containing Gases, As Well As Processes And Equipments For Modifying The Surfaces Of Articles App 20100206480 - Tanioka; Takashi ; et al.	2010-08-19
Processes and equipments for preparing F2-containing gases, as well as process and equipments for modifying the surfaces of articles App 20090047792 - Tanioka; Takashi ; et al.	2009-02-19
Cleaning gases and etching gases Grant 6,787,053 - Sekiya , et al. September 7, 2	2004-09-07
Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon- containing compounds App 20030143846 - Sekiya, Akira ; et al.	2003-07-31
Cleaning gasses and etching gases App 20030001134 - Sekiya, Akira ; et al.	2003-01-02

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