loadpatents
name:-0.017890930175781
name:-0.013156175613403
name:-0.0025761127471924
Fan; Der-Tsyr Patent Filings

Fan; Der-Tsyr

Patent Applications and Registrations

Patent applications and USPTO patent grants for Fan; Der-Tsyr.The latest application filed is for "non-volatile memory".

Company Profile
2.22.24
  • Fan; Der-Tsyr - Taoyuan City TW
  • Fan; Der-Tsyr - Taoyuan TW
  • Fan; Der-Tsyr - Taoyuan County TW
  • Fan; Der-Tsyr - Beijing CN
  • Fan; Der-Tsyr - Taiwan TW
  • Fan; Der-Tsyr - Ping-Jen City TW
  • Fan; Der-Tsyr - Hsinchu TW
  • Fan; Der-Tsyr - Ping-Jen TW
  • Fan; Der-Tsyr - Jhongli TW
  • Fan; Der-Tsyr - Jhongli City TW
  • Fan; Der-Tsyr - Tao-Yuan TW
  • Fan; Der-Tsyr - Taipei TW
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Non-volatile Memory
App 20200152646 - Fan; Der-Tsyr ;   et al.
2020-05-14
Non-volatile memory
Grant 10,644,011 - Fan , et al.
2020-05-05
Non-volatile memory unit and method for manufacturing the same
Grant 9,673,338 - Fan , et al. June 6, 2
2017-06-06
Non-volatile memory unit and method for manufacturing the same
Grant 9,647,143 - Fan , et al. May 9, 2
2017-05-09
Low electric field source erasable non-volatile memory and methods for producing same
Grant 9,640,403 - Fan , et al. May 2, 2
2017-05-02
Non-volatile memory device and manufacture of the same
Grant 9,502,513 - Fan , et al. November 22, 2
2016-11-22
Non-volatile memory unit and method for manufacturing the same
Grant 9,502,582 - Fan , et al. November 22, 2
2016-11-22
Non-volatile Memory Device And Manufacture Of The Same
App 20160240622 - FAN; DER-TSYR ;   et al.
2016-08-18
Non-volatile Memory Unit And Method For Manufacturing The Same
App 20160204273 - FAN; DER-TSYR ;   et al.
2016-07-14
Non-volatile Memory Unit And Method For Manufacturing The Same
App 20160204272 - FAN; DER-TSYR ;   et al.
2016-07-14
Non-volatile Memory Unit And Method For Manufacturing The Same
App 20160204274 - FAN; DER-TSYR ;   et al.
2016-07-14
Low Electric Field Source Erasable Non-Volatile Memory and Methods for Producing Same
App 20150243795 - Fan; Der-Tsyr ;   et al.
2015-08-27
Non-Volatile Memory and Methods for Producing Same
App 20150214315 - Fan; Der-Tsyr ;   et al.
2015-07-30
Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio
Grant 7,974,136 - Chern , et al. July 5, 2
2011-07-05
Method for Erasing a Flash Memory Cell or an Array of Such Cells Having Improved Erase Coupling Ratio
App 20100157687 - Chern; Geeng-Chuan Michael ;   et al.
2010-06-24
Process of fabricating flash memory with enhanced program and erase coupling
Grant 7,718,488 - Chen , et al. May 18, 2
2010-05-18
Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio
Grant 7,668,013 - Chern , et al. February 23, 2
2010-02-23
NAND flash memory with nitride charge storage gates and fabrication process
Grant 7,646,641 - Chen , et al. January 12, 2
2010-01-12
NOR flash memory
Grant 7,598,561 - Chen , et al. October 6, 2
2009-10-06
Method For Erasing A Flash Memory Cell Or An Array Of Such Cells Having Improved Erase Coupling Ratio
App 20090201744 - Chern; Geeng-Chuan Michael ;   et al.
2009-08-13
NAND flash memory with densely packed memory gates and fabrication process
Grant 7,501,321 - Tuntasood , et al. March 10, 2
2009-03-10
NOR Flash Memory and Fabrication Process
App 20070257299 - Chen; Bomy ;   et al.
2007-11-08
Self-aligned split-gate NAND flash memory and fabrication process
Grant 7,217,621 - Chen , et al. May 15, 2
2007-05-15
NAND Flash Memory with Densely Packed Memory Gates and Fabrication Process
App 20070032018 - Tuntasood; Prateep ;   et al.
2007-02-08
Process of Fabricating Flash Memory with Enhanced Program and Erase Coupling
App 20060203552 - Chen; Chiou-Feng ;   et al.
2006-09-14
Flash memory with enhanced program and erase coupling and process of fabricating the same
Grant 7,046,552 - Chen , et al. May 16, 2
2006-05-16
Flash memory with trench select gate and fabrication process
Grant 7,037,787 - Fan , et al. May 2, 2
2006-05-02
Self-aligned split-gate NAND flash memory and fabrication process
App 20060068529 - Chen; Chiou-Feng ;   et al.
2006-03-30
Self-aligned split-gate NAND flash memory and fabrication process
Grant 6,992,929 - Chen , et al. January 31, 2
2006-01-31
NAND flash memory with densely packed memory gates and fabrication process
App 20060017085 - Tuntasood; Prateep ;   et al.
2006-01-26
NAND flash memory with nitride charge storage gates and fabrication process
App 20050276106 - Chen, Chiou-Feng ;   et al.
2005-12-15
Self-aligned split-gate NAND flash memory and fabrication process
App 20050207225 - Chen, Chiou-Feng ;   et al.
2005-09-22
Flash memory with enhanced program and erase coupling and process of fabricating the same
App 20050207199 - Chen, Chiou-Feng ;   et al.
2005-09-22
Flash memory with trench select gate and fabrication process
App 20050146937 - Fan, Der-Tsyr ;   et al.
2005-07-07
NAND flash memory with enhanced program and erase performance, and fabrication process
App 20050145923 - Chen, Chiou-Feng ;   et al.
2005-07-07
Flash memory with trench select gate and fabrication process
Grant 6,894,339 - Fan , et al. May 17, 2
2005-05-17
Self-aligned split-gate NAND flash memory and fabrication process
Grant 6,885,586 - Chen , et al. April 26, 2
2005-04-26
Flash memory with trench select gate and fabrication process
App 20040130947 - Fan, Der-Tsyr ;   et al.
2004-07-08
Flash memory cells with separated self-aligned select and erase gates, and process of fabrication
Grant 6,747,310 - Fan , et al. June 8, 2
2004-06-08
Flash memory cells with separated self-aligned select and erase gates, and process of fabrication
App 20040065917 - Fan, Der-Tsyr ;   et al.
2004-04-08
Self-aligned split-gate NAND flash memory and fabrication process
App 20040057286 - Chen, Chiou-Feng ;   et al.
2004-03-25
Electrically erasable programmable read-only memory and method of erasing select memory cells
Grant 6,654,291 - Jan , et al. November 25, 2
2003-11-25
Electrically erasable programmable read-only memory
App 20030002346 - Jan, Shang Tarng ;   et al.
2003-01-02
Metallizing process of semiconductor industry
App 20010000496 - Chu, John ;   et al.
2001-04-26
Method of fabricating trench isolation for IC manufacture
Grant 6,110,801 - Tsai , et al. August 29, 2
2000-08-29
Method for increasing the refresh time of the DRAM
Grant 5,882,984 - Fan , et al. March 16, 1
1999-03-16

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