Diao; Zhitao

Patent Applications and Registrations

Patent applications and USPTO patent grants for Diao; Zhitao.The latest application filed is for "magnetic elements of amorphous based dual free layer structures and recording devices using such elements".

Company Profile

6.43.30

Diao; Zhitao - Fremont CA

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Magnetic elements of amorphous based dual free layer structures and recording devices using such elements Grant 11,430,592 - Diao , et al. August 30, 2	2022-08-30
Magnetic sensor array with one TMR stack having two free layers Grant 11,415,645 - Zheng , et al. August 16, 2	2022-08-16
Magnetic sensor array with dual TMR film Grant 11,385,305 - Zheng , et al. July 12, 2	2022-07-12
Magnetic Elements of Amorphous Based Dual Free Layer Structures and Recording Devices Using Such Elements App 20220093305 - DIAO; Zhitao ; et al.	2022-03-24
MAMR head with synthetic antiferromagnetic (SAF) coupled notch Grant 11,211,083 - Zheng , et al. December 28, 2	2021-12-28
Ultra-low RA and high TMR magnetic sensor with radiation reflective lead Grant 11,125,840 - Zheng , et al. September 21, 2	2021-09-21
Ultra-low RA and high TMR magnetic sensor with radiation reflective lead App 20210255256 - ZHENG; Yuankai ; et al.	2021-08-19
Magnetic Sensor Array with Dual TMR Film App 20210063504 - ZHENG; Yuankai ; et al.	2021-03-04
Magnetic Sensor Array with Different RA TMR Film App 20210063507 - ZHENG; Yuankai ; et al.	2021-03-04
Magnetic Sensor Array With One TMR Stack Having Two Free Layers App 20210055361 - ZHENG; Yuankai ; et al.	2021-02-25
Read Head Including Semiconductor Spacer And Long Spin Diffusion Length Nonmagnetic Conductive Material And Method Of Making The App 20200286508 - ZHENG; Yuankai ; et al.	2020-09-10
Read head including semiconductor spacer and long spin diffusion length nonmagnetic conductive material and method of making thereof Grant 10,755,733 - Zheng , et al. A	2020-08-25
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Grant 10,446,209 - Watts , et al. Oc	2019-10-15
Method for providing a multilayer AFM layer in a read sensor Grant 9,858,951 - Zheng , et al. January 2, 2	2018-01-02
Magnetic read head with antiferromagentic layer Grant 9,830,936 - Li , et al. November 28, 2	2017-11-28
Magnetic reader having a crystal decoupling structure Grant 9,508,365 - Zheng , et al. November 29, 2	2016-11-29
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Grant 9,412,787 - Watts , et al. August 9, 2	2016-08-09
Magnetic Read Head With Antiferromagentic Layer App 20160180870 - LI; SHAOPING ; et al.	2016-06-23
Heated Afm Layer Deposition And Cooling Process For Tmr Magnetic Recording Sensor With High Pinning Field App 20150380026 - ZHENG; YUANKAI ; et al.	2015-12-31
Magnetic recording read transducer having a laminated free layer Grant 9,214,169 - Kaiser , et al. December 15, 2	2015-12-15
Method of manufacturing a magnetic read head Grant 9,214,172 - Li , et al. December 15, 2	2015-12-15
Heated AFM layer deposition and cooling process for TMR magnetic recording sensor with high pinning field Grant 9,147,408 - Zheng , et al. September 29, 2	2015-09-29
Methods for providing magnetic storage elements with high magneto-resistance using Heusler alloys Grant 9,042,057 - Diao , et al. May 26, 2	2015-05-26
Magnetic Read Head With Antiferromagnetic Layer App 20150109702 - LI; SHAOPING ; et al.	2015-04-23
Sensor with positive coupling between dual ferromagnetic free layer laminates Grant 9,007,725 - Diao , et al. April 14, 2	2015-04-14
Process for providing a magnetic recording transducer having a smooth magnetic seed layer Grant 8,984,740 - Zheng , et al. March 24, 2	2015-03-24
Method and system for providing magnetic tunneling junction elements having improved performance through capping layer induced perpendicular anisotropy and memories using such magnetic elements Grant 8,913,350 - Watts , et al. December 16, 2	2014-12-16
Systems and methods for providing magnetic storage elements with high magneto-resistance using heusler alloys Grant 8,760,818 - Diao , et al. June 24, 2	2014-06-24
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements App 20140151829 - Watts; Steven M. ; et al.	2014-06-05
Magnetic sensor having a high spin polarization reference layer Grant 8,582,253 - Zheng , et al. November 12, 2	2013-11-12
Magnetic element having low saturation magnetization Grant 8,476,723 - Nagai , et al. July 2, 2	2013-07-02
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements App 20120155156 - Watts; Steven M. ; et al.	2012-06-21
Magnetic Element Having Low Saturation Magnetization App 20110241141 - Nagai; Hide ; et al.	2011-10-06
Magnetic element having low saturation magnetization Grant 7,982,275 - Nagai , et al. July 19, 2	2011-07-19
Magnetic device having multilayered free ferromagnetic layer Grant 7,973,349 - Huai , et al. July 5, 2	2011-07-05
Magnetic element utilizing free layer engineering Grant 7,916,433 - Huai , et al. March 29, 2	2011-03-29
Magnetic storage device with intermediate layers having different sheet resistivities Grant 7,888,755 - Hosomi , et al. February 15, 2	2011-02-15
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements App 20110031569 - Watts; Steven M. ; et al.	2011-02-10
Method And System For Providing Magnetic Tunneling Junction Elements Having Improved Performance Through Capping Layer Induced Perpendicular Anisotropy And Memories Using Such Magnetic Elements App 20110032644 - Watts; Steven M. ; et al.	2011-02-10
Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer Grant 7,859,034 - Huai , et al. December 28, 2	2010-12-28
Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier Grant 7,851,840 - Diao , et al. December 14, 2	2010-12-14
Spin transfer magnetic element having low saturation magnetization free layers Grant 7,821,087 - Nguyen , et al. October 26, 2	2010-10-26
Magnetic Element Utilizing Free Layer Engineering App 20100247967 - Huai; Yiming ; et al.	2010-09-30
Magnetic device having stabilized free ferromagnetic layer Grant 7,777,261 - Huai , et al. August 17, 2	2010-08-17
Magnetic element utilizing free layer engineering Grant 7,760,474 - Huai , et al. July 20, 2	2010-07-20
Method and system for providing field biased magnetic memory devices Grant 7,738,287 - Diao , et al. June 15, 2	2010-06-15
Magnetic Devices Having Oxide Antiferromagnetic Layer Next To Free Ferromagnetic Layer App 20100072524 - Huai; Yiming ; et al.	2010-03-25
Magnetic memories utilizing a magnetic element having an engineered free layer Grant 7,663,848 - Huai , et al. February 16, 2	2010-02-16
Magnetic Element Having Low Saturation Magnetization App 20090050991 - Nagai; Hide ; et al.	2009-02-26
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements Grant 7,495,303 - Diao , et al. February 24, 2	2009-02-24
Method And System For Providing Field Biased Magnetic Memory Devices App 20080273380 - Diao; Zhitao ; et al.	2008-11-06
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density Grant 7,430,135 - Huai , et al. September 30, 2	2008-09-30
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements Grant 7,369,427 - Diao , et al. May 6, 2	2008-05-06
Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier App 20080061388 - Diao; Zhitao ; et al.	2008-03-13
Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein Grant 7,289,356 - Diao , et al. October 30, 2	2007-10-30
On-plug magnetic tunnel junction devices based on spin torque transfer switching App 20070246787 - Wang; Lien-Chang ; et al.	2007-10-25
Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density App 20070171694 - Huai; Yiming ; et al.	2007-07-26
Spin Transfer Magnetic Element Having Low Saturation Magnetization Free Layers App 20070159734 - Nguyen; Paul P. ; et al.	2007-07-12
Spin transfer magnetic element having low saturation magnetization free layers Grant 7,242,045 - Nguyen , et al. July 10, 2	2007-07-10
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements App 20070120211 - Diao; Zhitao ; et al.	2007-05-31
Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells App 20070085068 - Apalkov; Dmytro ; et al.	2007-04-19
Magnetic device having stabilized free ferromagnetic layer App 20070063236 - Huai; Yiming ; et al.	2007-03-22
Magnetic device having multilayered free ferromagnetic layer App 20070063237 - Huai; Yiming ; et al.	2007-03-22
Method and system for providing current balanced writing for memory cells and magnetic devices Grant 7,187,577 - Wang , et al. March 6, 2	2007-03-06
Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein App 20060279981 - Diao; Zhitao ; et al.	2006-12-14
Method and system for providing a highly textured magnetoresistance element and magnetic memory App 20060128038 - Pakala; Mahendra ; et al.	2006-06-15
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements App 20060049472 - Diao; Zhitao ; et al.	2006-03-09
Spin transfer magnetic element having low saturation magnetization free layers App 20050184839 - Nguyen, Paul P. ; et al.	2005-08-25
Method and system for providing high sensitivity giant magnetoresistive sensors Grant 6,888,704 - Diao , et al. May 3, 2	2005-05-03

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