Costa; Xiying

Patent Applications and Registrations

Patent applications and USPTO patent grants for Costa; Xiying.The latest application filed is for "non-volatile storage system with adjustable select gates as a function of temperature".

Company Profile

2.49.42

Costa; Xiying - San Jose CA
Costa; Xiying - Milpitas CA
- San Jose CA US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Non-volatile storage system with adjustable select gates as a function of temperature Grant 10,573,388 - Gupta , et al. Feb	2020-02-25
Non-volatile Storage System With Adjustable Select Gates As A Function Of Temperature App 20190311770 - Gupta; Mahim Raj ; et al.	2019-10-10
Word line dependent pass voltages in non-volatile memory Grant 10,388,390 - Costa A	2019-08-20
Word Line Dependent Pass Voltages In Non-volatile Memory App 20190221274 - Costa; Xiying	2019-07-18
Three-dimensional memory structure having a back gate electrode Grant 10,355,007 - Costa , et al. July 16, 2	2019-07-16
Word line dependent pass voltages in non-volatile memory Grant 10,283,208 - Costa	2019-05-07
Word Line Dependent Pass Voltages In Non-volatile Memory App 20180322935 - Costa; Xiying	2018-11-08
Three-dimensional memory devices containing inter-tier dummy memory cells and methods of making the same Grant 10,056,399 - Costa , et al. August 21, 2	2018-08-21
Word line dependent pass voltages in non-volatile memory Grant 10,049,758 - Costa August 14, 2	2018-08-14
Three-dimensional Memory Devices Containing Inter-tier Dummy Memory Cells And Methods Of Making The Same App 20180182771 - Costa; Xiying ; et al.	2018-06-28
Word Line Dependent Pass Voltages In Non-Volatile Memory App 20180012667 - Costa; Xiying	2018-01-11
Stacked vertical memory array architectures, systems and methods Grant 9,672,917 - Costa , et al. June 6, 2	2017-06-06
Three-dimensional Memory Structure Having A Back Gate Electrode App 20170098655 - COSTA; Xiying ; et al.	2017-04-06
Vertical NAND and method of making thereof using sequential stack etching and landing pad Grant 9,515,080 - Takahashi , et al. December 6, 2	2016-12-06
Recovery of partially programmed block in non-volatile memory Grant 9,460,799 - Costa , et al. October 4, 2	2016-10-04
Group word line erase and erase-verify methods for 3D non-volatile memory Grant 9,330,778 - Costa , et al. May 3, 2	2016-05-03
Compact three dimensional vertical NAND and method of making thereof Grant 9,331,090 - Alsmeier , et al. May 3, 2	2016-05-03
Pseudo block operation mode in 3D NAND Grant 9,240,241 - Costa , et al. January 19, 2	2016-01-19
Selection of data for redundancy calculation by likely error rate Grant 9,177,673 - Raghu , et al. November 3, 2	2015-11-03
Surface treatment to improve resistive-switching characteristics Grant 9,178,149 - Miller , et al. November 3, 2	2015-11-03
Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current Grant 9,142,304 - Costa , et al. September 22, 2	2015-09-22
Selection of data for redundancy calculation by likely error rate Grant 9,136,022 - Raghu , et al. September 15, 2	2015-09-15
3D stacked non-volatile storage programming to conductive state Grant 9,099,202 - Mihnea , et al. August 4, 2	2015-08-04
Erase Operation For 3D Non-Volatile Memory With Controllable Gate-Induced Drain Leakage Current App 20150170748 - Costa; Xiying ; et al.	2015-06-18
Group word line erase and erase-verify methods for 3D non-volatile memory Grant 9,047,973 - Costa , et al. June 2, 2	2015-06-02
Selection of Data for Redundancy Calculation By Likely Error Rate App 20150121157 - Raghu; Deepak ; et al.	2015-04-30
Selection of Data for Redundancy Calculation By Likely Error Rate App 20150117099 - Raghu; Deepak ; et al.	2015-04-30
Erase operation for 3D non-volatile memory with controllable gate-induced drain leakage current Grant 9,019,775 - Costa , et al. April 28, 2	2015-04-28
Pseudo Block Operation Mode In 3D NAND App 20150092493 - Costa; Xiying ; et al.	2015-04-02
Group Word Line Erase And Erase-Verify Methods For 3D Non-Volatile Memory App 20150043278 - Costa; Xiying ; et al.	2015-02-12
Compact Three Dimensional Vertical Nand And Method Of Making Thereof App 20150037950 - Alsmeier; Johann ; et al.	2015-02-05
Balanced method for programming multi-layer cell memories Grant 8,934,292 - Costa , et al. January 13, 2	2015-01-13
Pseudo block operation mode in 3D NAND Grant 08923054 -	2014-12-30
Pseudo block operation mode in 3D NAND Grant 8,923,054 - Costa , et al. December 30, 2	2014-12-30
Pseudo Block Operation Mode In 3d Nand App 20140369123 - Costa; Xiying ; et al.	2014-12-18
Pseudo Block Operation Mode In 3d Nand App 20140369122 - Costa; Xiying ; et al.	2014-12-18
Pseudo block operation mode in 3D NAND Grant 8,913,431 - Costa , et al. December 16, 2	2014-12-16
Erase operation with controlled select gate voltage for 3D non-volatile memory Grant 8,908,435 - Li , et al. December 9, 2	2014-12-09
Erase for 3D non-volatile memory with sequential selection of word lines Grant 8,908,444 - Costa , et al. December 9, 2	2014-12-09
Counter doping compensation methods to improve diode performance Grant 8,883,589 - Costa , et al. November 11, 2	2014-11-11
Vertical NAND and method of making thereof using sequential stack etching and landing pad Grant 8,884,357 - Wang , et al. November 11, 2	2014-11-11
Erase operation with controlled select gate voltage for 3D non-volatile memory Grant 8,885,412 - Li , et al. November 11, 2	2014-11-11
Compact three dimensional vertical NAND and method of making thereof Grant 8,878,278 - Alsmeier , et al. November 4, 2	2014-11-04
Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits Grant 8,879,333 - Costa , et al. November 4, 2	2014-11-04
Surface Treatment to Improve Resistive-Switching Characteristics App 20140322887 - Miller; Michael ; et al.	2014-10-30
Surface treatment to improve resistive-switching characteristics Grant 8,872,151 - Miller , et al. October 28, 2	2014-10-28
Threshold voltage adjustment for a select gate transistor in a stacked non-volatile memory device Grant 8,867,271 - Li , et al. October 21, 2	2014-10-21
Erase for 3D non-volatile memory with sequential selection of word lines Grant 8,861,280 - Costa , et al. October 14, 2	2014-10-14
Vertical Nand And Method Of Making Thereof Using Sequential Stack Etching And Landing Pad App 20140284697 - Wang; Chi-Ming ; et al.	2014-09-25
Soft Erase Operation For 3d Non-volatile Memory With Selective Inhibiting Of Passed Bits App 20140269081 - Costa; Xiying ; et al.	2014-09-18
Vertical Nand And Method Of Making Thereof Using Sequential Stack Etching And Landing Pad App 20140264525 - Takahashi; Akira ; et al.	2014-09-18
Erase For 3D Non-Volatile Memory With Sequential Selection Of Word Lines App 20140247661 - Costa; Xiying ; et al.	2014-09-04
Group Word Line Erase And Erase-Verify Methods For 3D Non-Volatile Memory App 20140247668 - Costa; Xiying ; et al.	2014-09-04
Group word line erase and erase-verify methods for 3D non-volatile memory Grant 8,824,211 - Costa , et al. September 2, 2	2014-09-02
Erase Operation With Controlled Select Gate Voltage For 3D Non-Volatile Memory App 20140226416 - Li; Haibo ; et al.	2014-08-14
Group Word Line Erase And Erase-verify Methods For 3d Non-volatile Memory App 20140226414 - Costa; Xiying ; et al.	2014-08-14
Soft erase operation for 3D non-volatile memory with selective inhibiting of passed bits Grant 8,787,094 - Costa , et al. July 22, 2	2014-07-22
Memory cell with resistance-switching layers Grant 8,737,111 - Kreupl , et al. May 27, 2	2014-05-27
3d Stacked Non-volatile Storage Programming To Conductive State App 20140126291 - Mihnea; Andrei ; et al.	2014-05-08
Erase For 3D Non-Volatile Memory With Sequential Selection Of Word Lines App 20140043916 - Costa; Xiying ; et al.	2014-02-13
Erase inhibit for 3D non-volatile memory Grant 8,649,219 - Li , et al. February 11, 2	2014-02-11
Surface Treatment to Improve Resistive-Switching Characteristics App 20140001430 - Miller; Michael ; et al.	2014-01-02
Threshold Voltage Adjustment For A Select Gate Transistor In A Stacked Non-Volatile Memory Device App 20130322174 - Li; Haibo ; et al.	2013-12-05
Erase Inhibit For 3D Non-Volatile Memory App 20130294167 - Li; Haibo ; et al.	2013-11-07
Erase Operation For 3D Non-Volatile Memory With Controllable Gate-Induced Drain Leakage Current App 20130279257 - Costa; Xiying ; et al.	2013-10-24
Soft Erase Operation For 3D Non-Volatile Memory With Selective Inhibiting Of Passed Bits App 20130279256 - Costa; Xiying ; et al.	2013-10-24
Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same Grant 8,551,855 - Xu , et al. October 8, 2	2013-10-08
Compact Three Dimensional Vertical Nand And Method Of Making Thereof App 20130248974 - ALSMEIER; Johann ; et al.	2013-09-26
Erase inhibit for 3D non-volatile memory Grant 8,488,382 - Li , et al. July 16, 2	2013-07-16
Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same Grant 8,481,396 - Xu , et al. July 9, 2	2013-07-09
Erase Operation With Controlled Select Gate Voltage For 3D Non-Volatile Memory App 20130163336 - Li; Haibo ; et al.	2013-06-27
Erase Inhibit For 3D Non-Volatile Memory App 20130163337 - Li; Haibo ; et al.	2013-06-27
Balanced Method for Programming Multi-Layer Cell Memories App 20120236624 - Costa; Xiying ; et al.	2012-09-20
Counter Doping Compensation Methods To Improve Diode Performance App 20120074367 - Costa; Xiying ; et al.	2012-03-29
Memory Cell With Resistance-Switching Layers App 20110310653 - Kreupl; Franz ; et al.	2011-12-22
Memory Cell That Includes A Carbon-based Reversible Resistance Switching Element Compatible With A Steering Element, And Methods Of Forming The Same App 20110095258 - Xu; Huiwen ; et al.	2011-04-28
Memory Cell That Includes A Carbon-based Reversible Resistance Switching Element Compatible With A Steering Element, And Methods Of Forming The Same App 20110095257 - Xu; Huiwen ; et al.	2011-04-28

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