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name:-0.036170959472656
name:-0.02637791633606
name:-0.0026481151580811
Clevenger; Lawrence Patent Filings

Clevenger; Lawrence

Patent Applications and Registrations

Patent applications and USPTO patent grants for Clevenger; Lawrence.The latest application filed is for "devices and methods of forming self-aligned, uniform nano sheet spacers".

Company Profile
1.25.26
  • Clevenger; Lawrence - Rhinebeck NY
  • Clevenger; Lawrence - LaGrangeville NY
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Devices and methods of forming self-aligned, uniform nano sheet spacers
Grant 10,388,729 - Zhang , et al. A
2019-08-20
Devices And Methods Of Forming Self-aligned, Uniform Nano Sheet Spacers
App 20170330934 - ZHANG; John ;   et al.
2017-11-16
Capacitor designs for integrated circuits utilizing self-aligned double patterning (SADP)
Grant 8,856,715 - Stephens , et al. October 7, 2
2014-10-07
Intelligent wireless power charging system
Grant 8,024,012 - Clevenger , et al. September 20, 2
2011-09-20
Semiconductor integrated circuit devices having high-Q wafer back-side capacitors
Grant 7,851,321 - Clevenger , et al. December 14, 2
2010-12-14
Addressable hierarchical metal wire test methodology
Grant 7,749,778 - Chanda , et al. July 6, 2
2010-07-06
Method of fabricating a microelectromechanical system (MEMS) switch
Grant 7,657,995 - Hsu , et al. February 9, 2
2010-02-09
Intelligent Wireless Power Charging System
App 20090312046 - Clevenger; Lawrence ;   et al.
2009-12-17
Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
Grant 7,531,407 - Clevenger , et al. May 12, 2
2009-05-12
Semiconductor Integrated Circuit Devices Having High-Q Wafer Back-Side Capacitors
App 20090111235 - Clevenger; Lawrence ;   et al.
2009-04-30
Semiconductor integrated circuit devices having high-Q wafer back-side capacitors
Grant 7,473,979 - Clevenger , et al. January 6, 2
2009-01-06
Addressable Hierarchical Metal Wire Test Methodology
App 20080160656 - Chanda; Kaushik ;   et al.
2008-07-03
Method For Chip To Package Interconnect
App 20080160752 - Clevenger; Lawrence ;   et al.
2008-07-03
Structure and method of fabricating a hinge type MEMS switch
Grant 7,348,870 - Hsu , et al. March 25, 2
2008-03-25
Low dielectric semiconductor device and process for fabricating the same
Grant 7,329,600 - Clevenger , et al. February 12, 2
2008-02-12
Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
App 20080020488 - Clevenger; Lawrence ;   et al.
2008-01-24
Structure And Method Of Fabricating A Hinge Type Mems Switch
App 20080014663 - Hsu; Louis ;   et al.
2008-01-17
Structure and method for producing multiple size interconnections
Grant 7,312,529 - Clevenger , et al. December 25, 2
2007-12-25
Semiconductor integrated circuit devices having high-Q wafer back-side capacitors
App 20070278619 - Clevenger; Lawrence ;   et al.
2007-12-06
Bilayered metal hardmasks for use in dual damascene etch schemes
Grant 7,241,681 - Kumar , et al. July 10, 2
2007-07-10
Structure And Method For Producing Multiple Size Interconnections
App 20070007665 - Clevenger; Lawrence ;   et al.
2007-01-11
Method of forming a MIM capacitor for Cu BEOL application
Grant 7,091,542 - Yang , et al. August 15, 2
2006-08-15
Structure And Method Of Fabricating A Hinge Type Mems Switch
App 20060145792 - Hsu; Louis C. ;   et al.
2006-07-06
Bilayered metal hardmasks for use in dual damascene etch schemes
App 20060113278 - Kumar; Kaushik ;   et al.
2006-06-01
Bilayered metal hardmasks for use in Dual Damascene etch schemes
Grant 7,052,621 - Kumar , et al. May 30, 2
2006-05-30
Low dielectric semiconductor device and process for fabricating the same
App 20050227480 - Clevenger, Lawrence ;   et al.
2005-10-13
Bilayered metal hardmasks for use in dual damascene etch schemes
App 20040251234 - Kumar, Kaushik ;   et al.
2004-12-16
Semiconductor structure having in-situ formed unit resistors and method for fabrication
Grant 6,831,369 - Cabral, Jr. , et al. December 14, 2
2004-12-14
Semiconductor structure having in-situ formed unit resistors and method for fabrication
Grant 6,828,232 - Cabral, Jr. , et al. December 7, 2
2004-12-07
Method of forming organic spacers and using organic spacers to form semiconductor device features
Grant 6,818,519 - Fang , et al. November 16, 2
2004-11-16
Method of forming organic spacers and using organic spacers to form semiconductor device features
App 20040219743 - Fang, Sunfei ;   et al.
2004-11-04
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
Grant 6,794,226 - Cabral, Jr. , et al. September 21, 2
2004-09-21
Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
Grant 6,777,286 - Clevenger , et al. August 17, 2
2004-08-17
Semiconductor structure having in-situ formed unit resistors and method for fabrication
App 20040104438 - Cabral, Cyril JR. ;   et al.
2004-06-03
Semiconductor structure having in-situ formed unit resistors and method for fabrication
App 20040094843 - Cabral, Cyril JR. ;   et al.
2004-05-20
Method of forming organic spacers and using organic spacers to form semiconductor device features
App 20040058518 - Fang, Sunfei ;   et al.
2004-03-25
Method for forming refractory metal-silicon-nitrogen capacitors and structures formed
Grant 6,707,097 - Cabral, Jr. , et al. March 16, 2
2004-03-16
Semiconductor structure having in-situ formed unit resistors
Grant 6,700,203 - Cabral, Jr. , et al. March 2, 2
2004-03-02
Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
App 20040007720 - Clevenger, Lawrence ;   et al.
2004-01-15
High dielectric constant materials
Grant 6,653,246 - Chudzik , et al. November 25, 2
2003-11-25
Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
Grant 6,624,526 - Clevenger , et al. September 23, 2
2003-09-23
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
App 20030151116 - Cabral, Cyril JR. ;   et al.
2003-08-14
High dielectric constant materials
App 20030132509 - Chudzik, Michael P. ;   et al.
2003-07-17
Method for forming refractory metal-silicon-nitrogen capacitors and structures formed
App 20030107075 - Cabral, Cyril JR. ;   et al.
2003-06-12
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
Grant 6,545,339 - Cabral, Jr. , et al. April 8, 2
2003-04-08
Method of manufacturing high dielectric constant material
Grant 6,541,331 - Chudzik , et al. April 1, 2
2003-04-01
Method Of Manufacturing High Dielectric Constant Material
App 20030032235 - Chudzik, Michael P. ;   et al.
2003-02-13
Method for forming refractory metal-silicon-nitrogen capacitors and structures formed
App 20020185689 - Cabral, Cyril JR. ;   et al.
2002-12-12
Compact SRAM cell incorporating refractory metal-silicon-nitrogen resistive elements and method for fabricating
App 20020180068 - Clevenger, Lawrence ;   et al.
2002-12-05
Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication
App 20020130367 - Cabral, Cyril JR. ;   et al.
2002-09-19
Method for fabricating ultra high-resistive conductors in semiconductor devices and devices fabricated
App 20020125986 - Cabral, Cyril JR. ;   et al.
2002-09-12
Company Registrations

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