| Patent | Date |
|---|
Thin-film transistors with vertical channels
Grant 11,450,750 - Haratipour , et al. September 20, 2 | 2022-09-20 |
Engineering tensile strain buffer in art for high quality Ge channel
Grant 11,450,527 - Le , et al. September 20, 2 | 2022-09-20 |
Contact stacks to reduce hydrogen in thin film transistor
Grant 11,444,205 - Sen Gupta , et al. September 13, 2 | 2022-09-13 |
Transistor device with channel recess structure and method of providing same
Grant 11,444,204 - Sharma , et al. September 13, 2 | 2022-09-13 |
Vertical Tunneling Field-effect Transistors
App 20220278227 - Huang; Cheng-Ying ; et al. | 2022-09-01 |
Vertical thin-film transistors between metal layers
Grant 11,417,770 - Sharma , et al. August 16, 2 | 2022-08-16 |
Nanowire thin film transistors with textured semiconductors
Grant 11,417,775 - Shivaraman , et al. August 16, 2 | 2022-08-16 |
Tunneling field effect transistors
Grant 11,404,562 - Huang , et al. August 2, 2 | 2022-08-02 |
Encapsulation layers of thin film transistors
Grant 11,387,366 - Sharma , et al. July 12, 2 | 2022-07-12 |
Vertical tunneling field-effect transistors
Grant 11,335,793 - Huang , et al. May 17, 2 | 2022-05-17 |
Thin Film Transistors Having U-shaped Features
App 20220149209 - DEWEY; Gilbert ; et al. | 2022-05-12 |
Reducing Band-to-band Tunneling In Semiconductor Devices
App 20220109072 - CHU-KUNG; Benjamin ; et al. | 2022-04-07 |
Vertical thin film transistors having self-aligned contacts
Grant 11,296,229 - Sharma , et al. April 5, 2 | 2022-04-05 |
Source/drain Diffusion Barrier For Germanium Nmos Transistors
App 20220093797 - GLASS; Glenn A. ; et al. | 2022-03-24 |
Thin film transistors having U-shaped features
Grant 11,264,512 - Dewey , et al. March 1, 2 | 2022-03-01 |
Thin-film Transistors With Low Contact Resistance
App 20220045220 - SHARMA; Abhishek A. ; et al. | 2022-02-10 |
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors
App 20220037530 - GLASS; Glenn A. ; et al. | 2022-02-03 |
Dual Gate Control For Trench Shaped Thin Film Transistors
App 20220028861 - Sharma; Abhishek A. ; et al. | 2022-01-27 |
Reducing band-to-band tunneling in semiconductor devices
Grant 11,233,148 - Chu-Kung , et al. January 25, 2 | 2022-01-25 |
Source/drain diffusion barrier for germanium NMOS transistors
Grant 11,222,977 - Glass , et al. January 11, 2 | 2022-01-11 |
Broken bandgap contact
Grant 11,195,924 - Chu-Kung , et al. December 7, 2 | 2021-12-07 |
Thin-film transistors with low contact resistance
Grant 11,189,733 - Sharma , et al. November 30, 2 | 2021-11-30 |
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors
Grant 11,189,730 - Glass , et al. November 30, 2 | 2021-11-30 |
Dual gate control for trench shaped thin film transistors
Grant 11,183,594 - Sharma , et al. November 23, 2 | 2021-11-23 |
III-N epitaxial device structures on free standing silicon mesas
Grant 11,177,376 - Dasgupta , et al. November 16, 2 | 2021-11-16 |
Air gap for thin film transistors
Grant 11,158,711 - Sharma , et al. October 26, 2 | 2021-10-26 |
Wide bandgap group IV subfin to reduce leakage
Grant 11,152,290 - Chu-Kung , et al. October 19, 2 | 2021-10-19 |
Transistors employing carbon-based etch stop layer for preserving source/drain material during contact trench etch
Grant 11,121,030 - Glass , et al. September 14, 2 | 2021-09-14 |
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors
Grant 11,101,356 - Glass , et al. August 24, 2 | 2021-08-24 |
Integrated circuit with germanium-rich channel transistors including one or more dopant diffusion barrier elements
Grant 11,101,350 - Glass , et al. August 24, 2 | 2021-08-24 |
Transistors with lattice matched gate structure
Grant 11,081,570 - Jambunathan , et al. August 3, 2 | 2021-08-03 |
Germanium transistor structure with underlap tip to reduce gate induced barrier lowering/short channel effect while minimizing impact on drive current
Grant 11,031,499 - Rachmady , et al. June 8, 2 | 2021-06-08 |
Deep Gate-All-Around Semiconductor Device having Germanium or Group III-V Active Layer
App 20210167216 - Pillarisetty; Ravi ; et al. | 2021-06-03 |
Gradient doping to lower leakage in low band gap material devices
Grant 11,024,713 - Sung , et al. June 1, 2 | 2021-06-01 |
Epitaxial buffer to reduce sub-channel leakage in MOS transistors
Grant 11,004,954 - Jambunathan , et al. May 11, 2 | 2021-05-11 |
Local interconnect for group IV source/drain regions
Grant 10,998,270 - Sung , et al. May 4, 2 | 2021-05-04 |
Thin film cap to lower leakage in low band gap material devices
Grant 10,985,263 - Sung , et al. April 20, 2 | 2021-04-20 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 10,950,733 - Pillarisetty , et al. March 16, 2 | 2021-03-16 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
Grant 10,930,500 - Dasgupta , et al. February 23, 2 | 2021-02-23 |
Fabrication Of Non-planar Igzo Devices For Improved Electrostatics
App 20210050455 - LE; Van H. ; et al. | 2021-02-18 |
Source/drain Diffusion Barrier For Germanium Nmos Transistors
App 20210005748 - Glass; Glenn A. ; et al. | 2021-01-07 |
Doped Insulator Cap To Reduce Source/drain Diffusion For Germanium Nmos Transistors
App 20210005722 - Glass; Glenn A. ; et al. | 2021-01-07 |
Improved Contacts To N-type Transistors With L-valley Channels
App 20200411690 - Crum; Dax M. ; et al. | 2020-12-31 |
Fabrication of non-planar IGZO devices for improved electrostatics
Grant 10,847,656 - Le , et al. November 24, 2 | 2020-11-24 |
Doped Sti To Reduce Source/drain Diffusion For Germanium Nmos Transistors
App 20200365711 - Glass; Glenn A. ; et al. | 2020-11-19 |
Encapsulation Layers Of Thin Film Transistors
App 20200343379 - SHARMA; Abhishek A. ; et al. | 2020-10-29 |
Vertical Tunneling Field-effect Transistors
App 20200335610 - Huang; Cheng-Ying ; et al. | 2020-10-22 |
Aluminum Indium Phosphide Subfin Germanium Channel Transistors
App 20200328278 - Metz; Matthew V. ; et al. | 2020-10-15 |
Source Or Drain Structures For Germanium N-channel Devices
App 20200313001 - KEECH; Ryan ; et al. | 2020-10-01 |
Dual Transistor Gate Workfunctions And Related Apparatuses, Systems, And Methods
App 20200312973 - MA; Sean T. ; et al. | 2020-10-01 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
Grant 10,784,170 - Radosavljevic , et al. Sept | 2020-09-22 |
Air Gap For Thin Film Transistors
App 20200287006 - SHARMA; Abhishek A. ; et al. | 2020-09-10 |
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements
App 20200273952 - GLASS; GLENN A. ; et al. | 2020-08-27 |
Reducing Band-to-band Tunneling In Semiconductor Devices
App 20200266296 - Chu-Kung; Benjamin ; et al. | 2020-08-20 |
Strain compensation in transistors
Grant 10,748,993 - Le , et al. A | 2020-08-18 |
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors
App 20200258982 - A1 | 2020-08-13 |
High mobility asymmetric field effect transistors with a band-offset semiconductor drain spacer
Grant 10,734,511 - Huang , et al. | 2020-08-04 |
Aluminum indium phosphide subfin germanium channel transistors
Grant 10,734,488 - Metz , et al. | 2020-08-04 |
Selectively regrown top contact for vertical semiconductor devices
Grant 10,727,339 - Chu-Kung , et al. | 2020-07-28 |
Integration of single crystalline transistors in back end of line (BEOL)
Grant 10,727,138 - Le , et al. | 2020-07-28 |
Thin-film Transistors With Low Contact Resistance
App 20200235246 - Sharma; Abhishek A. ; et al. | 2020-07-23 |
Self-aligned Contacts For Thin Film Transistors
App 20200227568 - LE; Van H. ; et al. | 2020-07-16 |
Aluminum Indium Phosphide Subfin Germanium Channel Transistors
App 20200212186 - Metz; Matthew V. ; et al. | 2020-07-02 |
Germanium-rich channel transistors including one or more dopant diffusion barrier elements
Grant 10,692,973 - Glass , et al. | 2020-06-23 |
Cladding layer epitaxy via template engineering for heterogeneous integration on silicon
Grant 10,693,008 - Mukherjee , et al. | 2020-06-23 |
Thin Film Transistor With Charge Trap Layer
App 20200185504 - Sharma; Abhishek A. ; et al. | 2020-06-11 |
Tunneling Field Effect Transistors
App 20200168724 - Huang; Cheng-Ying ; et al. | 2020-05-28 |
Low Schottky barrier contact structure for Ge NMOS
Grant 10,665,688 - Rachmady , et al. | 2020-05-26 |
Strained silicon layer with relaxed underlayer
Grant 10,644,111 - Chu-Kung , et al. | 2020-05-05 |
Systems, methods and devices for isolation for subfin leakage
Grant 10,644,112 - Chu-Kung , et al. | 2020-05-05 |
Thin-film Transistors With Vertical Channels
App 20200105892 - HARATIPOUR; Nazila ; et al. | 2020-04-02 |
Contact Stacks To Reduce Hydrogen In Semiconductor Devices
App 20200098874 - WEBER; Justin ; et al. | 2020-03-26 |
Vertical Thin-film Transistors Between Metal Layers
App 20200098931 - SHARMA; Abhishek ; et al. | 2020-03-26 |
Contact Stacks To Reduce Hydrogen In Thin Film Transistor
App 20200098657 - SEN GUPTA; Arnab ; et al. | 2020-03-26 |
Transistors With Ferroelectric Gates
App 20200098926 - Sharma; Abhishek A. ; et al. | 2020-03-26 |
Contact Electrodes For Vertical Thin-film Transistors
App 20200098930 - LE; Van H. ; et al. | 2020-03-26 |
Epitaxial Layers On Contact Electrodes For Thin-film Transistors
App 20200098875 - SUNG; Seung Hoon ; et al. | 2020-03-26 |
Non-linear Gate Dielectric Material For Thin-film Transistors
App 20200091274 - SHARMA; Abhishek ; et al. | 2020-03-19 |
Structures And Methods For Memory Cells
App 20200083225 - Ma; Sean T. ; et al. | 2020-03-12 |
Thin Film Cap To Lower Leakage In Low Band Gap Material Devices
App 20200083354 - SUNG; Seung Hoon ; et al. | 2020-03-12 |
Wide band gap transistors on non-native semiconductor substrates
Grant 10,580,895 - Then , et al. | 2020-03-03 |
Low band gap semiconductor devices having reduced gate induced drain leakage (GIDL)
Grant 10,580,882 - Dewey , et al. | 2020-03-03 |
Engineering Tensile Strain Buffer In Art For High Quality Ge Channel
App 20200066515 - LE; Van H. ; et al. | 2020-02-27 |
Selective epitaxially grown III-V materials based devices
Grant 10,573,717 - Goel , et al. Feb | 2020-02-25 |
Nanowire Thin Film Transistors With Textured Semiconductors
App 20200035839 - Shivaraman; Shriram ; et al. | 2020-01-30 |
Group III-N nanowire transistors
Grant 10,541,305 - Then , et al. Ja | 2020-01-21 |
Local Interconnect For Group Iv Source/drain Regions
App 20200006229 - SUNG; SEUNG HOON ; et al. | 2020-01-02 |
Contact Structures For Thin Film Transistor Devices
App 20200006570 - LE; Van H. ; et al. | 2020-01-02 |
Vertical Thin Film Transistors Having Self-aligned Contacts
App 20200006572 - SHARMA; Abhishek A. ; et al. | 2020-01-02 |
Thin Film Transistors Having U-shaped Features
App 20200006575 - DEWEY; Gilbert ; et al. | 2020-01-02 |
Vertical Architecture Of Thin Film Transistors
App 20190393356 - LE; Van H. ; et al. | 2019-12-26 |
High Density Negative Differential Resistance Based Memory
App 20190385657 - Augustine; Charles ; et al. | 2019-12-19 |
Multi-dielectric Gate Stack For Crystalline Thin Film Transistors
App 20190378932 - LE; Van H. ; et al. | 2019-12-12 |
Strain Compensation In Transistors
App 20190348499 - LE; Van H. ; et al. | 2019-11-14 |
Transistors Employing Cap Layer For Ge-rich Source/drain Regions
App 20190348415 - SUNG; SEUNG HOON ; et al. | 2019-11-14 |
Germanium-rich Channel Transistors Including One Or More Dopant Diffusion Barrier Elements
App 20190348500 - GLASS; Glenn A. ; et al. | 2019-11-14 |
Making a defect free fin based device in lateral epitaxy overgrowth region
Grant 10,475,706 - Goel , et al. Nov | 2019-11-12 |
Integration of III-V devices on Si wafers
Grant 10,475,888 - Dasgupta , et al. Nov | 2019-11-12 |
Transistors Employing Carbon-based Etch Stop Layer For Preserving Source/drain Material During Contact Trench Etch
App 20190341300 - GLASS; GLENN A. ; et al. | 2019-11-07 |
Gradient Doping To Lower Leakage In Low Band Gap Material Devices
App 20190341453 - Sung; Seung Hoon ; et al. | 2019-11-07 |
Asymmetrical Semiconductor Nanowire Field-effect Transistor
App 20190305085 - Sung; Seung Hoon ; et al. | 2019-10-03 |
Transistor Device With Channel Recess Structure And Method Of Providing Same
App 20190305101 - Sharma; Abhishek A. ; et al. | 2019-10-03 |
Dual Gate Control For Trench Shaped Thin Film Transistors
App 20190305137 - Sharma; Abhishek A. ; et al. | 2019-10-03 |
Self-aligned Bitline And Capacitor Via Formation
App 20190304982 - SHARMA; Abhishek A. ; et al. | 2019-10-03 |
Wurtzite Heteroepitaxial Structures With Inclined Sidewall Facets For Defect Propagation Control In Silicon Cmos-compatible Semi
App 20190287789 - Dasgupta; Sansaptak ; et al. | 2019-09-19 |
Transistor Source/drain Amorphous Interlayer Arrangements
App 20190273133 - Agrawal; Ashish ; et al. | 2019-09-05 |
Dielectric metal oxide cap for channel containing germanium
Grant 10,403,733 - Dewey , et al. Sep | 2019-09-03 |
Strain compensation in transistors
Grant 10,388,733 - Le , et al. A | 2019-08-20 |
Transistor fin formation via cladding on sacrificial core
Grant 10,373,977 - Glass , et al. | 2019-08-06 |
Cmos Implementation Of Germanium And Iii-v Nanowires And Nanoribbons In Gate-all-around Architecture
App 20190229022 - RADOSAVLJEVIC; Marko ; et al. | 2019-07-25 |
Strained Silicon Layer With Relaxed Underlayer
App 20190214466 - Chu-Kung; Benjamin ; et al. | 2019-07-11 |
Epitaxial Buffer To Reduce Sub-channel Leakage In Mos Transistors
App 20190214479 - JAMBUNATHAN; KARTHIK ; et al. | 2019-07-11 |
Transistors With Lattice Matched Gate Structure
App 20190189785 - JAMBUNATHAN; KARTHIK ; et al. | 2019-06-20 |
Systems, Methods And Devices For Isolation For Subfin Leakage
App 20190189749 - Chu-Kung; Benjamin ; et al. | 2019-06-20 |
Wurtzite heteroepitaxial structures with inclined sidewall facets for defect propagation control in silicon CMOS-compatible semiconductor devices
Grant 10,325,774 - Dasgupta , et al. | 2019-06-18 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
Grant 10,319,646 - Radosavljevic , et al. | 2019-06-11 |
Iii-n Epitaxial Device Structures On Free Standing Silicon Mesas
App 20190172938 - DASGUPTA; Sansaptak ; et al. | 2019-06-06 |
Group Iii-n Nanowire Transistors
App 20190165106 - THEN; Han Wui ; et al. | 2019-05-30 |
Strain Compensation In Transistors
App 20190148491 - LE; Van H. ; et al. | 2019-05-16 |
Broken Bandgap Contact
App 20190140061 - CHU-KUNG; Benjamin ; et al. | 2019-05-09 |
Integration Of Single Crystalline Transistors In Back End Of Line (beol)
App 20190131187 - LE; Van H. ; et al. | 2019-05-02 |
Wide Bandgap Group Iv Subfin To Reduce Leakage
App 20190122972 - CHU-KUNG; Benjamin ; et al. | 2019-04-25 |
High voltage field effect transistors
Grant 10,263,074 - Then , et al. | 2019-04-16 |
Germanium Transistor Structure With Underlap Tip To Reduce Gate Induced Barrier Lowering/short Channel Effect While Minimizing Impact On Drive Current
App 20190103486 - RACHMADY; Willy ; et al. | 2019-04-04 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy
Grant 10,249,490 - Goel , et al. | 2019-04-02 |
Offstate parasitic leakage reduction for tunneling field effect transistors
Grant 10,249,742 - Le , et al. | 2019-04-02 |
Selective Epitaxially Grown Iii-v Materials Based Devices
App 20190088747 - GOEL; Niti ; et al. | 2019-03-21 |
Techniques for forming non-planar germanium quantum well devices
Grant 10,236,369 - Pillarisetty , et al. | 2019-03-19 |
III-N epitaxial device structures on free standing silicon mesas
Grant 10,229,991 - Dasgupta , et al. | 2019-03-12 |
Strain compensation in transistors
Grant 10,224,399 - Le , et al. | 2019-03-05 |
Low Band Gap Semiconductor Devices Having Reduced Gate Induced Drain Leakage (gidl) And Their Methods Of Fabrication
App 20190058053 - DEWEY; Gilbert ; et al. | 2019-02-21 |
Method of fabricating semiconductor structures on dissimilar substrates
Grant 10,204,989 - Chu-Kung , et al. Feb | 2019-02-12 |
High Mobility Asymmetric Field Effect Transistors With A Band-offset Semiconductor Drain Spacer
App 20190035921 - Huang; Cheng-Ying ; et al. | 2019-01-31 |
Group III-N nanowire transistors
Grant 10,186,581 - Then , et al. Ja | 2019-01-22 |
Selective epitaxially grown III-V materials based devices
Grant 10,181,518 - Goel , et al. Ja | 2019-01-15 |
Techniques for forming contacts to quantum well transistors
Grant 10,177,249 - Pillarisetty , et al. J | 2019-01-08 |
Dielectric Metal Oxide Cap For Channel Containing Germanium
App 20180374928 - DEWEY; GILBERT ; et al. | 2018-12-27 |
Fabrication Of Non-planar Igzo Devices For Improved Electrostatics
App 20180366587 - LE; Van H. ; et al. | 2018-12-20 |
Low Schottky Barrier Contact Structure For Ge Nmos
App 20180331195 - RACHMADY; Willy ; et al. | 2018-11-15 |
Wide Band Gap Transistors On Non-native Semiconductor Substrates And Methods Of Manufacture Thereof
App 20180331224 - Then; Han Wui ; et al. | 2018-11-15 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer
App 20180301563 - Pillarisetty; Ravi ; et al. | 2018-10-18 |
Aspect ratio trapping (ART) for fabricating vertical semiconductor devices
Grant 10,096,709 - Le , et al. October 9, 2 | 2018-10-09 |
Methods and structures to prevent sidewall defects during selective epitaxy
Grant 10,096,474 - Mukherjee , et al. October 9, 2 | 2018-10-09 |
Group III-N transistor on nanoscale template structures
Grant 10,096,683 - Then , et al. October 9, 2 | 2018-10-09 |
III-N devices in Si trenches
Grant 10,096,682 - Dasgupta , et al. October 9, 2 | 2018-10-09 |
Strain Compensation In Transistors
App 20180261669 - LE; Van H. ; et al. | 2018-09-13 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
Grant 10,074,718 - Dewey , et al. September 11, 2 | 2018-09-11 |
Iii-n Epitaxial Device Structures On Free Standing Silicon Mesas
App 20180219087 - DASGUPTA; Sansaptak ; et al. | 2018-08-02 |
Wide band gap transistor on non-native semiconductor substrate
Grant 10,032,911 - Then , et al. July 24, 2 | 2018-07-24 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 10,026,845 - Pillarisetty , et al. July 17, 2 | 2018-07-17 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors
Grant 10,020,371 - Pillarisetty , et al. July 10, 2 | 2018-07-10 |
Offstate Parasitic Leakage Reduction For Tunneling Field Effect Transistors
App 20180158933 - LE; Van H. ; et al. | 2018-06-07 |
Transistor Fin Formation Via Cladding On Sacrifical Core
App 20180158841 - GLASS; GLENN A. ; et al. | 2018-06-07 |
Method To Form Ohmic Contacts To Semiconductors Using Quantized Metals
App 20180151684 - CHU-KUNG; Benjamin ; et al. | 2018-05-31 |
Germanium tin channel transistors
Grant 9,972,686 - Pillarisetty , et al. May 15, 2 | 2018-05-15 |
High electron mobility transistor (HEMT) and method of fabrication
Grant 9,947,780 - Then , et al. April 17, 2 | 2018-04-17 |
Strain compensation in transistors
Grant 9,911,807 - Le , et al. March 6, 2 | 2018-03-06 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs
Grant 9,911,835 - Kotlyar , et al. March 6, 2 | 2018-03-06 |
GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation
Grant 9,905,651 - Pillarisetty , et al. February 27, 2 | 2018-02-27 |
Techniques For Forming Non-planar Germanium Quantum Well Devices
App 20180047839 - PILLARISETTY; RAVI ; et al. | 2018-02-15 |
Germanium-based quantum well devices
Grant 9,876,014 - Pillarisetty , et al. January 23, 2 | 2018-01-23 |
Heterogeneous pocket for tunneling field effect transistors (TFETs)
Grant 9,871,106 - Avci , et al. January 16, 2 | 2018-01-16 |
Nanoscale structure with epitaxial film having a recessed bottom portion
Grant 9,865,684 - Chu-Kung , et al. January 9, 2 | 2018-01-09 |
Selective epitaxially grown III-V materials based devices
Grant 9,853,107 - Metz , et al. December 26, 2 | 2017-12-26 |
Forming III-V device structures on (111) planes of silicon fins
Grant 9,847,432 - Dasgupta , et al. December 19, 2 | 2017-12-19 |
Forming LED structures on silicon fins
Grant 9,847,448 - Dasgupta , et al. December 19, 2 | 2017-12-19 |
Transistor structure with variable clad/core dimension for stress and bandgap
Grant 9,818,870 - Rachmady , et al. November 14, 2 | 2017-11-14 |
Strain compensation in transistors
Grant 9,818,884 - Le , et al. November 14, 2 | 2017-11-14 |
Group Iii-n Transistor On Nanoscale Template Structures
App 20170323946 - THEN; Han Wui ; et al. | 2017-11-09 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 9,806,203 - Then , et al. October 31, 2 | 2017-10-31 |
Techniques for forming non-planar germanium quantum well devices
Grant 9,799,759 - Pillarisetty , et al. October 24, 2 | 2017-10-24 |
Group Iii-n Nanowire Transistors
App 20170288022 - THEN; Han Wui ; et al. | 2017-10-05 |
Method Of Fabricating Semiconductor Structures On Dissimilar Substrates
App 20170271448 - CHU-KUNG; Benjamin ; et al. | 2017-09-21 |
High Voltage Field Effect Transistors
App 20170263708 - THEN; Han Wui ; et al. | 2017-09-14 |
Methods And Structures To Prevent Sidewall Defects During Selective Epitaxy
App 20170256408 - MUKHERJEE; Niloy ; et al. | 2017-09-07 |
III-N material structure for gate-recessed transistors
Grant 9,755,062 - Then , et al. September 5, 2 | 2017-09-05 |
Integrating Vlsi-compatible Fin Structures With Selective Epitaxial Growth And Fabricating Devices Thereon
App 20170250182 - Goel; Niti ; et al. | 2017-08-31 |
Preventing isolation leakage in III-V devices
Grant 9,748,338 - Dewey , et al. August 29, 2 | 2017-08-29 |
Wurtzite Heteroepitaxial Structures With Inclined Sidewall Facets For Defect Propagation Control In Silicon Cmos-compatible Semiconductor Devices
App 20170236704 - Dasgupta; Sansaptak ; et al. | 2017-08-17 |
LOW SHEET RESISTANCE GaN CHANNEL ON Si SUBSTRATE USING InAlN AND AlGaN BI-LAYER CAPPING STACK
App 20170236928 - DASGUPTA; Sansaptak ; et al. | 2017-08-17 |
Wide Band Gap Transistor On Non-native Semiconductor Substrates And Methods Of Manufacture Thereof
App 20170236936 - Then; Han Wui ; et al. | 2017-08-17 |
Cmos Implementation Of Germanium And Iii-v Nanowires And Nanoribbons In Gate-all-around Architecture
App 20170229354 - RADOSAVLJEVIC; Marko ; et al. | 2017-08-10 |
Non-planar Semiconductor Device Having Group Iii-v Material Active Region With Multi-dielectric Gate Stack
App 20170221990 - Dewey; Gilbert ; et al. | 2017-08-03 |
Integration Of Iii-v Devices On Si Wafers
App 20170221999 - Dasgupta; Sansaptak ; et al. | 2017-08-03 |
NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
App 20170213892 - Dasgupta; Sansaptak ; et al. | 2017-07-27 |
Group III-N transistors on nanoscale template structures
Grant 9,716,149 - Then , et al. July 25, 2 | 2017-07-25 |
Iii-n Devices In Si Trenches
App 20170207307 - Dasgupta; Sansaptak ; et al. | 2017-07-20 |
Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby
Grant 9,711,591 - Mukherjee , et al. July 18, 2 | 2017-07-18 |
Techniques for forming contacts to quantum well transistors
Grant 9,704,981 - Pillarisetty , et al. July 11, 2 | 2017-07-11 |
Selective Epitaxially Grown Iii-v Materials Based Devices
App 20170194142 - Goel; Niti ; et al. | 2017-07-06 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer
App 20170194506 - Pillarisetty; Ravi ; et al. | 2017-07-06 |
Methods and structures to prevent sidewall defects during selective epitaxy
Grant 9,698,013 - Mukherjee , et al. July 4, 2 | 2017-07-04 |
Method of fabricating semiconductor structures on dissimilar substrates
Grant 9,698,222 - Chu-Kung , et al. July 4, 2 | 2017-07-04 |
Non-silicon Device Heterolayers On Patterned Silicon Substrate For Cmos By Combination Of Selective And Conformal Epitaxy
App 20170186598 - Goel; Niti ; et al. | 2017-06-29 |
Group III-N nanowire transistors
Grant 9,691,857 - Then , et al. June 27, 2 | 2017-06-27 |
Strain Compensation In Transistors
App 20170179228 - Le; Van H. ; et al. | 2017-06-22 |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon
Grant 9,685,381 - Goel , et al. June 20, 2 | 2017-06-20 |
High voltage field effect transistors
Grant 9,685,508 - Then , et al. June 20, 2 | 2017-06-20 |
Integration of III-V devices on Si wafers
Grant 9,673,045 - Dasgupta , et al. June 6, 2 | 2017-06-06 |
Making A Defect Free Fin Based Device In Lateral Epitaxy Overgrowth Region
App 20170154981 - Goel; Niti ; et al. | 2017-06-01 |
III-N transistors with enhanced breakdown voltage
Grant 9,666,708 - Then , et al. May 30, 2 | 2017-05-30 |
Methods of containing defects for non-silicon device engineering
Grant 9,666,583 - Goel , et al. May 30, 2 | 2017-05-30 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
Grant 9,666,492 - Radosavljevic , et al. May 30, 2 | 2017-05-30 |
Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof
Grant 9,660,085 - Then , et al. May 23, 2 | 2017-05-23 |
Low sheet resistance GaN channel on Si substrates using InAlN and AlGaN bi-layer capping stack
Grant 9,660,064 - Dasgupta , et al. May 23, 2 | 2017-05-23 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
Grant 9,653,548 - Dewey , et al. May 16, 2 | 2017-05-16 |
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets
App 20170133493 - Kotlyar; Roza ; et al. | 2017-05-11 |
Germanium Tin Channel Transistors
App 20170125527 - Pillarisetty; Ravi ; et al. | 2017-05-04 |
Ge And Iii-v Channel Semiconductor Devices Having Maximized Compliance And Free Surface Relaxation
App 20170125524 - PILLARISETTY; RAVI ; et al. | 2017-05-04 |
III-N devices in Si trenches
Grant 9,640,422 - Dasgupta , et al. May 2, 2 | 2017-05-02 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 9,640,671 - Pillarisetty , et al. May 2, 2 | 2017-05-02 |
Iii-n Material Structure For Gate-recessed Transistors
App 20170104094 - Then; Han Wui ; et al. | 2017-04-13 |
Strain compensation in transistors
Grant 9,614,093 - Le , et al. April 4, 2 | 2017-04-04 |
Making a defect free fin based device in lateral epitaxy overgrowth region
Grant 9,583,396 - Goel , et al. February 28, 2 | 2017-02-28 |
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs
Grant 9,583,602 - Kotlyar , et al. February 28, 2 | 2017-02-28 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation
Grant 9,570,614 - Pillarisetty , et al. February 14, 2 | 2017-02-14 |
Iii-n Transistors With Enhanced Breakdown Voltage
App 20170018640 - Then; Han Wui ; et al. | 2017-01-19 |
Germanium-based Quantum Well Devices
App 20170012116 - Pillarisetty; Ravi ; et al. | 2017-01-12 |
Selectively Regrown Top Contact For Vertical Semiconductor Devices
App 20170012126 - CHU-KUNG; Benjamin ; et al. | 2017-01-12 |
Aspect Ratio Trapping (art) For Fabricating Vertical Semiconductor Devices
App 20170012125 - LE; Van H. ; et al. | 2017-01-12 |
III-N material structure for gate-recessed transistors
Grant 9,530,878 - Then , et al. December 27, 2 | 2016-12-27 |
Contact Techniques And Configurations For Reducing Parasitic Resistance In Nanowire Transistors
App 20160372560 - Pillarisetty; Ravi ; et al. | 2016-12-22 |
Strain Compensation In Transistors
App 20160372607 - LE; VAN H. ; et al. | 2016-12-22 |
Selective Epitaxially Grown Iii-v Materials Based Devices
App 20160365416 - METZ; MATTHEW V. ; et al. | 2016-12-15 |
Non-planar Iii-n Transistor
App 20160343844 - Then; Han Wui ; et al. | 2016-11-24 |
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets
App 20160322480 - Kotlyar; Roza ; et al. | 2016-11-03 |
Group Iii-n Nanowire Transistors
App 20160315153 - Then; Han Wui ; et al. | 2016-10-27 |
Germanium-based quantum well devices
Grant 9,478,635 - Pillarisetty , et al. October 25, 2 | 2016-10-25 |
Wide Band Gap Transistors On Non-native Semiconductor Substrates And Methods Of Manufacture Thereof
App 20160308041 - Then; Han Wui ; et al. | 2016-10-20 |
Nonplanar Iii-n Transistors With Compositionally Graded Semiconductor Channels
App 20160293774 - Then; Han Wui ; et al. | 2016-10-06 |
Non-planar III-N transistor
Grant 9,461,160 - Then , et al. October 4, 2 | 2016-10-04 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors
Grant 9,461,141 - Pillarisetty , et al. October 4, 2 | 2016-10-04 |
Method Of Fabricating Semiconductor Structures On Dissimilar Substrates
App 20160276438 - CHU-KUNG; Benjamin ; et al. | 2016-09-22 |
Heterogeneous Pocket For Tunneling Field Effect Transistors (tfets)
App 20160276440 - Avci; Uygar E. ; et al. | 2016-09-22 |
Techniques For Forming Contacts To Quantum Well Transistors
App 20160268407 - Pillarisetty; Ravi ; et al. | 2016-09-15 |
Non-planar Semiconductor Device Having Group Iii-v Material Active Region With Multi-dielectric Gate Stack
App 20160240612 - Dewey; Gilbert ; et al. | 2016-08-18 |
Group Iii-n Transistors On Nanoscale Template Structures
App 20160240617 - Then; Han Wui ; et al. | 2016-08-18 |
Transistor Structure With Variable Clad/core Dimension For Stress And Bandgap
App 20160240671 - RACHMADY; Willy ; et al. | 2016-08-18 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer
App 20160233344 - Pillarisetty; Ravi ; et al. | 2016-08-11 |
N-type and P-type tunneling field effect transistors (TFETs)
Grant 9,412,872 - Kotlyar , et al. August 9, 2 | 2016-08-09 |
Non-silicon Device Heterolayers On Patterned Silicon Substrate For Cmos By Combination Of Selective And Conformal Epitaxy
App 20160211263 - GOEL; Niti ; et al. | 2016-07-21 |
Group III-N nanowire transistors
Grant 9,397,188 - Then , et al. July 19, 2 | 2016-07-19 |
Forming Iii-v Device Structures On (111) Planes Of Silicon Fins
App 20160204276 - DASGUPTA; Sansaptak ; et al. | 2016-07-14 |
Integrating Vlsi-compatible Fin Structures With Selective Epitaxial Growth And Fabricating Devices Thereon
App 20160204037 - Goel; Niti ; et al. | 2016-07-14 |
Ge and III-V Channel Semiconductor Devices having Maximized Compliance and Free Surface Relaxation
App 20160204246 - PILLARISETTY; RAVI ; et al. | 2016-07-14 |
Making A Defect Free Fin Based Device In Lateral Epitaxy Overgrowth Region
App 20160204036 - Goel; Niti ; et al. | 2016-07-14 |
Improved Cladding Layer Epitaxy Via Template Engineering For Heterogeneous Integration On Silicon
App 20160204263 - MUKHERJEE; Niloy ; et al. | 2016-07-14 |
Selective Epitaxially Grown Iii-v Materials Based Devices
App 20160204208 - GOEL; Niti ; et al. | 2016-07-14 |
Lattice mismatched hetero-epitaxial film
Grant 9,391,181 - Chu-Kung , et al. July 12, 2 | 2016-07-12 |
Non-Planar Semiconductor Devices having Multi-Layered Compliant Substrates
App 20160190319 - KAVALIEROS; JACK T. ; et al. | 2016-06-30 |
Strain Compensation In Transistors
App 20160190345 - Le; Van H. ; et al. | 2016-06-30 |
Integration Of Iii-v Devices On Si Wafers
App 20160181085 - DASGUPTA; Sansaptak ; et al. | 2016-06-23 |
Methods And Structures To Prevent Sidewall Defects During Selective Epitaxy
App 20160181099 - MUKHERJEE; Niloy ; et al. | 2016-06-23 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 9,373,693 - Then , et al. June 21, 2 | 2016-06-21 |
Methods To Achieve High Mobility In Cladded Iii-v Channel Materials
App 20160172477 - DEWEY; Gilbert ; et al. | 2016-06-16 |
Techniques For Forming Non-planar Germanium Quantum Well Devices
App 20160172472 - PILLARISETTY; RAVI ; et al. | 2016-06-16 |
Forming Led Structures On Silicon Fins
App 20160163918 - DASGUPTA; Sansaptak ; et al. | 2016-06-09 |
Group III-N transistors on nanoscale template structures
Grant 9,362,369 - Then , et al. June 7, 2 | 2016-06-07 |
Techniques for forming contacts to quantum well transistors
Grant 9,356,099 - Pillarisetty , et al. May 31, 2 | 2016-05-31 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
Grant 9,343,574 - Dewey , et al. May 17, 2 | 2016-05-17 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 9,337,291 - Pillarisetty , et al. May 10, 2 | 2016-05-10 |
Stain compensation in transistors
Grant 9,306,068 - Le , et al. April 5, 2 | 2016-04-05 |
High Voltage Field Effect Transistors
App 20160079359 - Then; Han Wui ; et al. | 2016-03-17 |
Group Iii-n Nanowire Transistors
App 20160064512 - Then; Han Wui ; et al. | 2016-03-03 |
Germanium-based Quantum Well Devices
App 20160064520 - Pillarisetty; Ravi ; et al. | 2016-03-03 |
Iii-n Material Structure For Gate-recessed Transistors
App 20160064540 - Then; Han Wui ; et al. | 2016-03-03 |
Group Iii-n Transistors On Nanoscale Template Structures
App 20160064491 - Then; Han Wui ; et al. | 2016-03-03 |
NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
App 20160056244 - DASGUPTA; Sansaptak ; et al. | 2016-02-25 |
Techniques for forming non-planar germanium quantum well devices
Grant 9,263,557 - Pillarisetty , et al. February 16, 2 | 2016-02-16 |
Contact Techniques And Configurations For Reducing Parasitic Resistance In Nanowire Transistors
App 20160035860 - Pillarisetty; Ravi ; et al. | 2016-02-04 |
High voltage field effect transistors
Grant 9,245,989 - Then , et al. January 26, 2 | 2016-01-26 |
Group III-N nanowire transistors
Grant 9,240,410 - Then , et al. January 19, 2 | 2016-01-19 |
Stain Compensation In Transistors
App 20150380557 - Le; Van H. ; et al. | 2015-12-31 |
Germanium-based quantum well devices
Grant 9,219,135 - Pillarisetty , et al. December 22, 2 | 2015-12-22 |
Group III-N transistor on nanoscale template structures
Grant 9,219,079 - Then , et al. December 22, 2 | 2015-12-22 |
III-N material structure for gate-recessed transistors
Grant 9,209,290 - Then , et al. December 8, 2 | 2015-12-08 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer
App 20150349077 - Pillarisetty; Ravi ; et al. | 2015-12-03 |
Cmos Implementation Of Germanium And Iii-v Nanowires And Nanoribbons In Gate-all-around Architecture
App 20150325481 - RADOSAVLJEVIC; Marko ; et al. | 2015-11-12 |
Strain compensation in transistors
Grant 9,159,823 - Le , et al. October 13, 2 | 2015-10-13 |
Techniques for forming non-planar germanium quantum well devices
Grant 9,153,671 - Pillarisetty , et al. October 6, 2 | 2015-10-06 |
Methods Of Containing Defects For Non-silicon Device Engineering
App 20150270265 - Goel; Niti ; et al. | 2015-09-24 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer
Grant 9,136,343 - Pillarisetty , et al. September 15, 2 | 2015-09-15 |
Epitaxial Film On Nanoscale Structure
App 20150249131 - CHU-KUNG; BENJAMIN ; et al. | 2015-09-03 |
Contact techniques and configurations for reducing parasitic resistance in nanowire transistors
Grant 9,123,790 - Pillarisetty , et al. September 1, 2 | 2015-09-01 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture
Grant 9,123,567 - Radosavljevic , et al. September 1, 2 | 2015-09-01 |
Methods of containing defects for non-silicon device engineering
Grant 9,112,028 - Goel , et al. August 18, 2 | 2015-08-18 |
Non-planar Semiconductor Device Having Group Iii-v Material Active Region With Multi-dielectric Gate Stack
App 20150221762 - Dewey; Gilbert ; et al. | 2015-08-06 |
Iii-n Devices In Si Trenches
App 20150206796 - Dasgupta; Sansaptak ; et al. | 2015-07-23 |
Low Sheet Resistance GaN Channel on Si Substrates Using InAlN and AlGaN Bi-Layer Capping Stack
App 20150187924 - Dasgupta; Sansaptak ; et al. | 2015-07-02 |
Iii-n Material Structure For Gate-recessed Transistors
App 20150171205 - THEN; HAN WUI ; et al. | 2015-06-18 |
Apparatus and methods for improving parallel conduction in a quantum well device
Grant 9,048,266 - Pillarisetty , et al. June 2, 2 | 2015-06-02 |
Non-planar semiconductor device having active region with multi-dielectric gate stack
Grant 9,018,680 - Dewey , et al. April 28, 2 | 2015-04-28 |
Group Iii-n Transistor On Nanoscale Template Structures
App 20150108496 - THEN; Han Wui ; et al. | 2015-04-23 |
III-N material structure for gate-recessed transistors
Grant 8,987,091 - Then , et al. March 24, 2 | 2015-03-24 |
Nonplanar Iii-n Transistors With Compositionally Graded Semiconductor Channels
App 20150064859 - THEN; Han Wui ; et al. | 2015-03-05 |
Tunneling Field Effect Transistors (tfets) For Cmos Architectures And Approaches To Fabricating N-type And P-type Tfets
App 20150041847 - Kotlyar; Roza ; et al. | 2015-02-12 |
Group III-N transistors on nanoscale template structures
Grant 8,954,021 - Then , et al. February 10, 2 | 2015-02-10 |
Nonplanar III-N transistors with compositionally graded semiconductor channels
Grant 8,896,101 - Then , et al. November 25, 2 | 2014-11-25 |
Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETs
Grant 8,890,120 - Kotlyar , et al. November 18, 2 | 2014-11-18 |
Tunnel field effect transistor
Grant 8,890,118 - Chu-Kung , et al. November 18, 2 | 2014-11-18 |
Non-planar Semiconductor Device Having Group Iii-v Material Active Region With Multi-dielectric Gate Stack
App 20140332852 - Dewey; Gilbert ; et al. | 2014-11-13 |
Isolation for nanowire devices
Grant 8,883,573 - Shah , et al. November 11, 2 | 2014-11-11 |
Techniques For Forming Contacts To Quantum Well Transistors
App 20140326953 - Pillarisetty; Ravi ; et al. | 2014-11-06 |
Defect transferred and lattice mismatched epitaxial film
Grant 8,872,225 - Chu-Kung , et al. October 28, 2 | 2014-10-28 |
Increasing carrier injection velocity for integrated circuit devices
Grant 8,872,160 - Radosavljevic , et al. October 28, 2 | 2014-10-28 |
Method of isolating nanowires from a substrate
Grant 8,853,067 - Chu-Kung , et al. October 7, 2 | 2014-10-07 |
Group Iii-n Transistors On Nanoscale Template Structures
App 20140291693 - THEN; Han Wui ; et al. | 2014-10-02 |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
Grant 8,823,059 - Dewey , et al. September 2, 2 | 2014-09-02 |
Methods Of Containing Defects For Non-silicon Device Engineering
App 20140231871 - Goel; Niti ; et al. | 2014-08-21 |
Techniques for forming contacts to quantum well transistors
Grant 8,809,836 - Pillarisetty , et al. August 19, 2 | 2014-08-19 |
Contact Techniques And Configurations For Reducing Parasitic Resistance In Nanowire Transistors
App 20140209865 - Pillarisetty; Ravi ; et al. | 2014-07-31 |
Deep Gate-all-around Semiconductor Device Having Germanium Or Group Iii-v Active Layer
App 20140203327 - Pillarisetty; Ravi ; et al. | 2014-07-24 |
Methods Of Forming Hetero-layers With Reduced Surface Roughness And Bulk Defect Density On Non-native Surfaces And The Structures Formed Thereby
App 20140203326 - Mukherjee; Niloy ; et al. | 2014-07-24 |
Non-planar semiconductor device having channel region with low band-gap cladding layer
Grant 8,785,909 - Radosavljevic , et al. July 22, 2 | 2014-07-22 |
Epitaxial film growth on patterned substrate
Grant 8,785,907 - Goel , et al. July 22, 2 | 2014-07-22 |
Group III-N transistors on nanoscale template structures
Grant 8,768,271 - Then , et al. July 1, 2 | 2014-07-01 |
Lattice Mismatched Hetero-Epitaxial Film
App 20140175509 - CHU-KUNG; BENJAMIN ; et al. | 2014-06-26 |
Epitaxial Film On Nanoscale Structure
App 20140175379 - CHU-KUNG; BENJAMIN ; et al. | 2014-06-26 |
Epitaxial Film Growth On Patterned Substrate
App 20140175378 - Goel; Niti ; et al. | 2014-06-26 |
Defect Transferred and Lattice Mismatched Epitaxial Film
App 20140175512 - CHU-KUNG; BENJAMIN ; et al. | 2014-06-26 |
Nonplanar Iii-n Transistors With Compositionally Graded Semiconductor Channels
App 20140175515 - THEN; Han Wui ; et al. | 2014-06-26 |
Group Iii-n Transistors On Nanoscale Template Structures
App 20140170998 - THEN; Han Wui ; et al. | 2014-06-19 |
Methods of containing defects for non-silicon device engineering
Grant 8,716,751 - Goel , et al. May 6, 2 | 2014-05-06 |
Semiconductor device having germanium active layer with underlying parasitic leakage barrier layer
Grant 8,710,490 - Pillarisetty , et al. April 29, 2 | 2014-04-29 |
Germanium-based quantum well devices
Grant 8,592,803 - Pillarisetty , et al. November 26, 2 | 2013-11-26 |
Non-planar germanium quantum well devices
Grant 8,575,596 - Pillarisetty , et al. November 5, 2 | 2013-11-05 |
Apparatus and methods for improving parallel conduction in a quantum well device
Grant 8,525,151 - Pillarisetty , et al. September 3, 2 | 2013-09-03 |
Method of isolating nanowires from a substrate
Grant 8,525,162 - Chu-Kung , et al. September 3, 2 | 2013-09-03 |
Increasing carrier injection velocity for integrated circuit devices
Grant 8,440,998 - Radosavljevic , et al. May 14, 2 | 2013-05-14 |
Techniques for forming contacts to quantum well transistors
Grant 8,368,052 - Pillarisetty , et al. February 5, 2 | 2013-02-05 |
Apparatus And Methods For Improving Parallel Conduction In A Quantum Well Device
App 20120326123A1 - | 2012-12-27 |
Non-planar germanium quantum well devices
Grant 8,283,653 - Pillarisetty , et al. October 9, 2 | 2012-10-09 |
Isolation for nanowire devices
Grant 8,269,209 - Shah , et al. September 18, 2 | 2012-09-18 |
Apparatus and methods for improving parallel conduction in a quantum well device
Grant 8,242,001 - Pillarisetty , et al. August 14, 2 | 2012-08-14 |
Multiple-gate transistors and processes of making same
Grant 8,211,771 - Pillarisetty , et al. July 3, 2 | 2012-07-03 |
Germanium-based quantum well devices
Grant 8,193,523 - Pillarisetty , et al. June 5, 2 | 2012-06-05 |
Method of isolating nanowires from a substrate
Grant 8,168,508 - Chu-Kung , et al. May 1, 2 | 2012-05-01 |
Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using same
Grant 8,115,235 - Pillarisetty , et al. February 14, 2 | 2012-02-14 |
Germanium on insulator using compound semiconductor barrier layers
App 20100327317A1 - | 2010-12-30 |
| 