| Patent | Date |
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Low Resistance Contacts Including Intermetallic Alloy Of Nickel, Platinum, Titanium, Aluminum And Type Iv Semiconductor Elements
App 20210343647 - Bruley; John ; et al. | 2021-11-04 |
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
Grant 11,101,219 - Bruley , et al. August 24, 2 | 2021-08-24 |
Low Resistance Contacts Including Intermetallic Alloy Of Nickel, Platinum, Titanium, Aluminum And Type Iv Semiconductor Elements
App 20210193576 - Bruley; John ; et al. | 2021-06-24 |
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
Grant 10,985,105 - Bruley , et al. April 20, 2 | 2021-04-20 |
Thin film wafer transfer and structure for electronic devices
Grant 10,957,816 - Bayram , et al. March 23, 2 | 2021-03-23 |
Low Resistance Contacts Including Intermetallic Alloy Of Nickel, Platinum, Titanium, Aluminum And Type Iv Semiconductor Elements
App 20190157203 - Bruley; John ; et al. | 2019-05-23 |
Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
Grant 10,269,714 - Bruley , et al. | 2019-04-23 |
Low Resistance Contacts Including Intermetallic Alloy Of Nickel, Platinum, Titanium, Aluminum And Type Iv Semiconductor Elements
App 20190067198 - Bruley; John ; et al. | 2019-02-28 |
Selective and conformal passivation layer for 3D high-mobility channel devices
Grant 9,984,940 - Chu , et al. May 29, 2 | 2018-05-29 |
Low Resistance Contacts Including Intermetallic Alloy Of Nickel, Platinum, Titanium, Aluminum And Type Iv Semiconductor Elements
App 20180068950 - Bruley; John ; et al. | 2018-03-08 |
Nanowire field effect transistor (FET) and method for fabricating the same
Grant 9,887,264 - Chu , et al. February 6, 2 | 2018-02-06 |
Carbon nanostructure device fabrication utilizing protect layers
Grant 9,768,288 - Chu , et al. September 19, 2 | 2017-09-19 |
Carbon Nanostructure Device Fabrication Utilizing Protect Layers
App 20170186881 - CHU; JACK O. ; et al. | 2017-06-29 |
Nanowire Field Effect Transistor (fet) And Method For Fabricating The Same
App 20170170270 - Chu; Jack O. ; et al. | 2017-06-15 |
Method of manufacturing a semiconductor device using a self-aligned OPL replacement contact and patterned HSQ and a semiconductor device formed by same
Grant 9,548,238 - Cheng , et al. January 17, 2 | 2017-01-17 |
Nanowire field effect transistor (FET) and method for fabricating the same
Grant 9,431,301 - Chu , et al. August 30, 2 | 2016-08-30 |
Graphene Growth On A Carbon-containing Semiconductor Layer
App 20160225853 - Chu; Jack O. ; et al. | 2016-08-04 |
Graphene growth on a carbon-containing semiconductor layer
Grant 9,337,026 - Chu , et al. May 10, 2 | 2016-05-10 |
Planar semiconductor growth on III-V material
Grant 9,337,281 - Cheng , et al. May 10, 2 | 2016-05-10 |
Field Effect Transistor (fet) With Self-aligned Contacts, Integrated Circuit (ic) Chip And Method Of Manufacture
App 20160035743 - Cheng; Szu-Lin ; et al. | 2016-02-04 |
Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact
Grant 9,240,326 - Cheng , et al. January 19, 2 | 2016-01-19 |
Formation of a graphene layer on a large substrate
Grant 9,236,250 - Chu , et al. January 12, 2 | 2016-01-12 |
Graphene transistor with a sublithographic channel width
Grant 9,236,477 - Chu , et al. January 12, 2 | 2016-01-12 |
Planar Semiconductor Growth On Iii-v Material
App 20150325682 - CHENG; CHENG-WEI ; et al. | 2015-11-12 |
Method of forming well-controlled extension profile in MOSFET by silicon germanium based sacrificial layer
Grant 9,184,290 - Cheng , et al. November 10, 2 | 2015-11-10 |
Field effect transistor (FET) with self-aligned contacts, integrated circuit (IC) chip and method of manufacture
Grant 9,177,956 - Cheng , et al. November 3, 2 | 2015-11-03 |
Method Of Forming Well-controlled Extension Profile In Mosfet By Silicon Gemanium Based Sacrificial Layer
App 20150287826 - Cheng; Szu-lin ; et al. | 2015-10-08 |
Graphene Transistor With A Sublithographic Channel Width
App 20150236147 - Chu; Jack O. ; et al. | 2015-08-20 |
Planar semiconductor growth on III-V material
Grant 9,087,775 - Cheng , et al. July 21, 2 | 2015-07-21 |
Self-aligned borderless contacts using a photo-patternable dielectric material as a replacement contact
Grant 9,059,095 - Cheng , et al. June 16, 2 | 2015-06-16 |
Beol Compatible Fet Structure
App 20150060856 - TYBERG; Christy S. ; et al. | 2015-03-05 |
Method Of Manufacturing A Semiconductor Device Using A Self-aligned Opl Replacement Contact And Patterned Hsq And A Semiconductor Device Formed By Same
App 20150044870 - Cheng; Szu-Lin ; et al. | 2015-02-12 |
Field Effect Transistor (fet) With Self-aligned Contacts, Integrated Circuit (ic) Chip And Method Of Manufacture
App 20150035060 - Cheng; Szu-lin ; et al. | 2015-02-05 |
Graphene formation utilizing solid phase carbon sources
Grant 8,927,057 - Bol , et al. January 6, 2 | 2015-01-06 |
Carbon Nanostructure Device Fabrication Utilizing Protect Layers
App 20140374702 - CHU; JACK O. ; et al. | 2014-12-25 |
Thin film wafer transfer and structure for electronic devices
Grant 8,916,451 - Bayram , et al. December 23, 2 | 2014-12-23 |
Graphene growth on a non-hexagonal lattice
Grant 8,877,340 - Chu , et al. November 4, 2 | 2014-11-04 |
Self-aligned Borderless Contacts Using A Photo-patternable Dielectric Material As A Replacement Contact
App 20140312395 - Cheng; Szu-lin ; et al. | 2014-10-23 |
Self-aligned Borderless Contacts Using A Photo-patternable Dielectric Material As A Replacement Contact
App 20140312397 - Cheng; Szu-lin ; et al. | 2014-10-23 |
Integrated circuit tamper detection and response
Grant 8,861,728 - Chu , et al. October 14, 2 | 2014-10-14 |
Sacrificial Replacement Extension Layer To Obtain Abrupt Doping Profile
App 20140252500 - Cheng; Szu-Lin ; et al. | 2014-09-11 |
Sacrificial Replacement Extension Layer To Obtain Abrupt Doping Profile
App 20140252501 - Cheng; Szu-Lin ; et al. | 2014-09-11 |
Carbon nanostructure device fabrication utilizing protect layers
Grant 8,828,762 - Chu , et al. September 9, 2 | 2014-09-09 |
Carbon Nanostructure Device Fabrication Utilizing Protect Layers
App 20140225193 - CHU; JACK O. ; et al. | 2014-08-14 |
Thin Film Wafer Transfer And Structure For Electronic Devices
App 20140220764 - Bayram; Can ; et al. | 2014-08-07 |
Planar Semiconductor Growth On Iii-v Material
App 20140217468 - Cheng; Cheng-Wei ; et al. | 2014-08-07 |
Planar Semiconductor Growth On Iii-v Material
App 20140220766 - CHENG; Cheng-Wei ; et al. | 2014-08-07 |
Thin Film Wafer Transfer And Structure For Electronic Devices
App 20140217356 - BAYRAM; CAN ; et al. | 2014-08-07 |
Integrated Circuit Tamper Detection And Response
App 20140103286 - Chu; Jack O. ; et al. | 2014-04-17 |
Formation Of A Graphene Layer On A Large Substrate
App 20130285014 - Chu; Jack O. ; et al. | 2013-10-31 |
BEOL compatible FET structrure
Grant 8,569,803 - Tyberg , et al. October 29, 2 | 2013-10-29 |
Formation of a graphene layer on a large substrate
Grant 8,541,769 - Chu , et al. September 24, 2 | 2013-09-24 |
BEOL compatible FET structure
Grant 8,441,042 - Tyberg , et al. May 14, 2 | 2013-05-14 |
Method and apparatus for fabricating a heterojunction bipolar transistor
Grant 8,405,127 - Chu , et al. March 26, 2 | 2013-03-26 |
Monolithic Multi-junction Photovoltaic Cell And Method
App 20130048061 - CHENG; CHENG-WEI ; et al. | 2013-02-28 |
Graphene Growth On A Non-hexagonal Lattice
App 20120319078 - Chu; Jack O. ; et al. | 2012-12-20 |
Beol Compatible Fet Structrure
App 20120305929 - Tyberg; Christy S. ; et al. | 2012-12-06 |
Graphene Growth On A Carbon-containing Semiconductor Layer
App 20120193603 - Chu; Jack O. ; et al. | 2012-08-02 |
Nanowire Mosfet With Doped Epitaxial Contacts For Source And Drain
App 20120190155 - Chu; Jack O. ; et al. | 2012-07-26 |
Graphene growth on a carbon-containing semiconductor layer
Grant 8,187,955 - Chu , et al. May 29, 2 | 2012-05-29 |
Suspended germanium photodetector for silicon waveguide
Grant 8,178,382 - Assefa , et al. May 15, 2 | 2012-05-15 |
Formation Of A Graphene Layer On A Large Substrate
App 20120112164 - Chu; Jack O. ; et al. | 2012-05-10 |
Epitaxial Growth Of Silicon Carbide On Sapphire
App 20120112198 - Chu; Jack O. ; et al. | 2012-05-10 |
Nanowire MOSFET with doped epitaxial contacts for source and drain
Grant 8,153,494 - Chu , et al. April 10, 2 | 2012-04-10 |
Graphene Growth On A Non-hexagonal Lattice
App 20120028052 - Chu; Jack O. ; et al. | 2012-02-02 |
Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
Grant 8,017,499 - Chan , et al. September 13, 2 | 2011-09-13 |
Graphene Formation Utilizing Solid Phase Carbon Sources
App 20110206934 - Bol; Ageeth A. ; et al. | 2011-08-25 |
Nanowire MOSFET with doped epitaxial contacts for source and drain
Grant 7,999,251 - Chu , et al. August 16, 2 | 2011-08-16 |
Suspended Germanium Photodetector For Silicon Waveguide
App 20110143482 - Assefa; Solomon ; et al. | 2011-06-16 |
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
Grant 7,915,653 - Chu , et al. March 29, 2 | 2011-03-29 |
Suspended germanium photodetector for silicon waveguide
Grant 7,902,620 - Assefa , et al. March 8, 2 | 2011-03-08 |
Preparation of high quality strained-semiconductor directly-on-insulator substrates
Grant 7,897,480 - Chu , et al. March 1, 2 | 2011-03-01 |
Graphene Growth On A Carbon-containing Semiconductor Layer
App 20110042687 - Chu; Jack O. ; et al. | 2011-02-24 |
Carbon-on-insulator substrates by in-place bonding
Grant 7,811,906 - Bol , et al. October 12, 2 | 2010-10-12 |
Layer transfer of low defect SiGe using an etch-back process
Grant 7,786,468 - Chu , et al. August 31, 2 | 2010-08-31 |
Low Cost Fabrication Of Double Box Back Gate Silicon-on-insulator Wafers
App 20100176495 - Chu; Jack O. ; et al. | 2010-07-15 |
CMOS integration scheme employing a silicide electrode and a silicide-germanide alloy electrode
Grant 7,749,847 - Cabral, Jr. , et al. July 6, 2 | 2010-07-06 |
Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
Grant 7,704,815 - Chu , et al. April 27, 2 | 2010-04-27 |
High performance strained silicon FinFETs device and method for forming same
Grant 7,705,345 - Bedell , et al. April 27, 2 | 2010-04-27 |
Suspended Germanium Photodetector For Silicon Waveguide
App 20100038736 - Assefa; Solomon ; et al. | 2010-02-18 |
Epitaxial and polycrystalline growth of Si.sub.1-X-YGE.sub.XC.sub.Y and Si.sub.1-YC.sub.Y alloy layers on Si by UHV-CVD
Grant 7,652,288 - Chu , et al. January 26, 2 | 2010-01-26 |
Beol Compatible Fet Structure
App 20100006850 - Tyberg; Christy S. ; et al. | 2010-01-14 |
Nanowire Mosfet With Doped Epitaxial Contacts For Source And Drain
App 20090311835 - Chu; Jack O. ; et al. | 2009-12-17 |
Complementary Metal-oxide-semiconductor Device With Embedded Stressor
App 20090242989 - CHAN; KEVIN K. ; et al. | 2009-10-01 |
Cmos Integration Scheme Employing A Silicide Electrode And A Silicide-germanide Alloy Electrode
App 20090206413 - Cabral, JR.; Cyril ; et al. | 2009-08-20 |
Method And Apparatus For Fabricating A Heterojunction Bipolar Transistor
App 20090206370 - CHU; JACK O. ; et al. | 2009-08-20 |
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
Grant 7,510,904 - Chu , et al. March 31, 2 | 2009-03-31 |
Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
Grant 7,507,989 - Chan , et al. March 24, 2 | 2009-03-24 |
METHOD OF CREATING DEFECT FREE HIGH Ge CONTENT (> 25%) SiGe-ON-INSULATOR (SGOI) SUBSTRATES USING WAFER BONDING TECHNIQUES
App 20090004831 - Chu; Jack O. ; et al. | 2009-01-01 |
Method of creating defect free high Ge content (> 25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
Grant 7,445,977 - Chu , et al. November 4, 2 | 2008-11-04 |
Preparation Of High Quality Strained-semiconductor Directly-on-insulator Substrates
App 20080261055 - Chu; Jack O. ; et al. | 2008-10-23 |
High speed GE channel heterostructures for field effect devices
Grant 7,429,748 - Chu September 30, 2 | 2008-09-30 |
STRAINED Si MOSFET ON TENSILE-STRAINED SiGe-ON-INSULATOR (SGOI)
App 20080220588 - Chan; Kevin K. ; et al. | 2008-09-11 |
STRUCTURE FOR AND METHOD OF FABRICATING A HIGH-SPEED CMOS-COMPATIBLE Ge-ON-INSULATOR PHOTODETECTOR
App 20080185618 - Chu; Jack O. ; et al. | 2008-08-07 |
Epitaxial and polycrystalline growth of Si.sub.1-x-yGe.sub.xC.sub.y and Si.sub.1-yC.sub.y alloy layers on Si by UHV-CVD
Grant 7,405,422 - Chu , et al. July 29, 2 | 2008-07-29 |
Structure for and method of fabricating a high-mobility field-effect transistor
Grant 7,393,735 - Chu , et al. July 1, 2 | 2008-07-01 |
STRUCTURE FOR AND METHOD OF FABRICATING A HIGH-SPEED CMOS-COMPATIBLE Ge-ON-INSULATOR PHOTODETECTOR
App 20080113467 - Chu; Jack O. ; et al. | 2008-05-15 |
Nanowire MOSFET with doped epitaxial contacts for source and drain
App 20080061284 - Chu; Jack O. ; et al. | 2008-03-13 |
STRAINED Si MOSFET ON TENSILE-STRAINED SiGe-ON-INSULATOR (SGOI)
App 20080042166 - Chan; Kevin K. ; et al. | 2008-02-21 |
METHOD OF CREATING DEFECT FREE HIGH Ge CONTENT (> 25%) SiGe-ON-INSULATOR (SGOI) SUBSTRATES USING WAFER BONDING TECHNIQUES
App 20070218647 - Chu; Jack O. ; et al. | 2007-09-20 |
BEOL compatible FET structure
App 20070194450 - Tyberg; Christy S. ; et al. | 2007-08-23 |
Low leakage heterojunction vertical transistors and high performance devices thereof
App 20070148939 - Chu; Jack O. ; et al. | 2007-06-28 |
Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
Grant 7,235,812 - Chu , et al. June 26, 2 | 2007-06-26 |
Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
Grant 7,217,949 - Chan , et al. May 15, 2 | 2007-05-15 |
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
Grant 7,138,697 - Chu , et al. November 21, 2 | 2006-11-21 |
Structure for and method of fabricating a high-mobility field-effect transistor
App 20060234481 - Chu; Jack O. ; et al. | 2006-10-19 |
Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
Grant 7,098,057 - Chu , et al. August 29, 2 | 2006-08-29 |
Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
Grant 7,074,686 - Bedell , et al. July 11, 2 | 2006-07-11 |
Method of creating defect free high Ge content (>25%) SiGe-on-insulator (SGOI) substrates using wafer bonding techniques
App 20060054891 - Chu; Jack O. ; et al. | 2006-03-16 |
Strained Si MOSFET on tensile-strained SiGe-on-insulator (SGOI)
App 20060001088 - Chan; Kevin K. ; et al. | 2006-01-05 |
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device
Grant 6,972,250 - Cabral, Jr. , et al. December 6, 2 | 2005-12-06 |
Structure for and method of fabricating a high-mobility field-effect transistor
Grant 6,949,761 - Chu , et al. September 27, 2 | 2005-09-27 |
Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector
App 20050184354 - Chu, Jack O. ; et al. | 2005-08-25 |
High performance strained silicon FinFETs device and method for forming same
App 20050145941 - Bedell, Stephen W. ; et al. | 2005-07-07 |
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
App 20050145172 - Chu, Jack O. ; et al. | 2005-07-07 |
Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
App 20050127392 - Chu, Jack O. ; et al. | 2005-06-16 |
Structure for and method of fabricating a high-mobility field-effect transistor
App 20050077510 - Chu, Jack O. ; et al. | 2005-04-14 |
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
Grant 6,875,279 - Chu , et al. April 5, 2 | 2005-04-05 |
Ultra High-speed Si/sige Modulation-doped Field Effect Transistors On Ultra Thin Soi/sgoi Substrate
App 20050045905 - Chu, Jack O. ; et al. | 2005-03-03 |
Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate
Grant 6,855,963 - Chu , et al. February 15, 2 | 2005-02-15 |
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
Grant 6,855,649 - Christiansen , et al. February 15, 2 | 2005-02-15 |
Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
Grant 6,805,962 - Bedell , et al. October 19, 2 | 2004-10-19 |
Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
App 20040192069 - Bedell, Stephen W. ; et al. | 2004-09-30 |
Method to increase carbon and boron doping concentrations in Si and SiGe films
Grant 6,780,735 - Jagannathan , et al. August 24, 2 | 2004-08-24 |
Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen
Grant 6,743,651 - Chu , et al. June 1, 2 | 2004-06-01 |
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
Grant 6,709,903 - Christiansen , et al. March 23, 2 | 2004-03-23 |
Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device
Grant 6,690,072 - Cabral, Jr. , et al. February 10, 2 | 2004-02-10 |
Method And Structure For Ultra-low Contact Resistance Cmos Formed By Vertically Self-aligned Cosi2 On Raised Source Drain Si/sige Device
App 20030219965 - Cabral, Cyril JR. ; et al. | 2003-11-27 |
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
App 20030218189 - Christiansen, Silke H. ; et al. | 2003-11-27 |
Method and structure for ultra-low contact resistance CMOS formed by vertically self-alligned CoSi2 on raised source drain Si/SiGe device
App 20030219971 - Cabral, Cyril JR. ; et al. | 2003-11-27 |
Strained Si based layer made by UHV-CVD, and devices therein
Grant 6,649,492 - Chu , et al. November 18, 2 | 2003-11-18 |
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
App 20030201468 - Christiansen, Silke H. ; et al. | 2003-10-30 |
Strained Si based layer made by UHV-CVD, and devices therein
App 20030203600 - Chu, Jack O. ; et al. | 2003-10-30 |
Method of forming a SiGe-on-insulator substrate using separation by implantation of oxygen
App 20030199126 - Chu, Jack O. ; et al. | 2003-10-23 |
Strained Si Based Layer Made By Uhv-cvd, And Devices Therein
App 20030153161 - Chu, Jack O. ; et al. | 2003-08-14 |
Method of creating high-quality relaxed SiGe-on-insulator for strained Si CMOS applications
App 20030139000 - Bedell, Stephen W. ; et al. | 2003-07-24 |
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
Grant 6,593,625 - Christiansen , et al. July 15, 2 | 2003-07-15 |
Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
App 20030094130 - Chu, Jack O. ; et al. | 2003-05-22 |
Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
App 20020185686 - Christiansen, Silke H. ; et al. | 2002-12-12 |
Method to increase carbon and boron doping concentrations in Si and SiGe films
App 20020160587 - Jagannathan, Basanth ; et al. | 2002-10-31 |
Nonselective germanium deposition by UHV/CVD
Grant 5,286,334 - Akbar , et al. February 15, 1 | 1994-02-15 |
Low temperature emitter process for high performance bipolar devices
Grant 5,266,504 - Blouse , et al. November 30, 1 | 1993-11-30 |
Heteroepitaxial growth of germanium on silicon by UHV/CVD
Grant 5,259,918 - Akbar , et al. November 9, 1 | 1993-11-09 |
Capacitors with roughened single crystal plates
Grant 5,245,206 - Chu , et al. September 14, 1 | 1993-09-14 |
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