Patent | Date |
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Trench Capacitor Profile To Decrease Substrate Warpage App 20210343881 - Cheng; Hsin-Li ;   et al. | 2021-11-04 |
Trench capacitor profile to decrease substrate warpage Grant 11,063,157 - Cheng , et al. July 13, 2 | 2021-07-13 |
Trench Capacitor Profile To Decrease Substrate Warpage App 20210202761 - Cheng; Hsin-Li ;   et al. | 2021-07-01 |
Multiple-time programming memory cells and methods for forming the same Grant 9,373,627 - Fu , et al. June 21, 2 | 2016-06-21 |
Multiple-Time Programming Memory Cells and Methods for Forming the Same App 20150140752 - Fu; Ching-Hung ;   et al. | 2015-05-21 |
Multiple-time programming memory cells and methods for forming the same Grant 8,952,442 - Fu , et al. February 10, 2 | 2015-02-10 |
Multiple-Time Programming Memory Cells and Methods for Forming the Same App 20140308798 - Fu; Ching-Hung ;   et al. | 2014-10-16 |
Multiple-time programming memory cells and methods for forming the same Grant 8,772,854 - Fu , et al. July 8, 2 | 2014-07-08 |
Multiple-Time Programming Memory Cells and Methods for Forming the Same App 20130256772 - Fu; Ching-Hung ;   et al. | 2013-10-03 |
MOSFET with isolation structure and fabrication method thereof Grant 7,923,787 - Huang , et al. April 12, 2 | 2011-04-12 |
Different-voltage device manufactured by a CMOS compatible process and high-voltage device used in the different-voltage device Grant 7,858,466 - Huang , et al. December 28, 2 | 2010-12-28 |
MOSFET with isolation structure for monolithic integration and fabrication method thereof Grant 7,847,365 - Huang , et al. December 7, 2 | 2010-12-07 |
Electrostatic discharge protection semiconductor structure Grant 7,615,826 - Huang , et al. November 10, 2 | 2009-11-10 |
Mosfet With Isolation Structure For Monolithic Integration And Fabrication Method Thereof App 20090050962 - Huang; Chih-Feng ;   et al. | 2009-02-26 |
Mosfet With Isolation Structure and Fabrication Method Thereof App 20080290410 - Huang; Chih-Feng ;   et al. | 2008-11-27 |
Electrostatic discharge device having controllable trigger voltage Grant 7,417,287 - Huang , et al. August 26, 2 | 2008-08-26 |
Electrostatic discharge device with controllable holding current Grant 7,355,250 - Huang , et al. April 8, 2 | 2008-04-08 |
Electrostatic discharge device integrated with pad Grant 7,285,837 - Huang , et al. October 23, 2 | 2007-10-23 |
Different-voltage Device Manufactured By A Cmos Compatible Process And High-voltage Device Used In The Different-voltage Device App 20070178648 - Huang; Chih-Feng ;   et al. | 2007-08-02 |
Vertical Transistor With Field Region Structure App 20070117328 - Huang; Chih-Feng ;   et al. | 2007-05-24 |
High Resistance Cmos Resistor App 20070096255 - HUANG; CHIH-FENG ;   et al. | 2007-05-03 |
CMOS compatible process with different-voltage devices Grant 7,205,201 - Huang , et al. April 17, 2 | 2007-04-17 |
Electrostatic discharge device with latch-up immunity App 20070052032 - Huang; Chih-Feng ;   et al. | 2007-03-08 |
Electrostatic discharge device with controllable holding current App 20070052030 - Huang; Chih-Feng ;   et al. | 2007-03-08 |
Process of fabricating high resistance CMOS resistor Grant 7,169,661 - Huang , et al. January 30, 2 | 2007-01-30 |
Electrostatic Discharge Protection Semiconductor Structure App 20070004150 - Huang; Chih-Feng ;   et al. | 2007-01-04 |
Electrostatic discharge device having controllable trigger voltage App 20070001229 - Huang; Chih-Feng ;   et al. | 2007-01-04 |
High-voltage field effect transistor having isolation structure App 20060220170 - Huang; Chih-Feng ;   et al. | 2006-10-05 |
Vertical transistor with field region structure App 20060197153 - Huang; Chih-Feng ;   et al. | 2006-09-07 |
High voltage and low on-resistance LDMOS transistor having radiation structure and isolation effect Grant 7,102,194 - Huang , et al. September 5, 2 | 2006-09-05 |
Electrostatic Discharge Device Integrated With Pad App 20060157790 - Huang; Chih-Feng ;   et al. | 2006-07-20 |
Electrostatic discharge device Grant 7,042,028 - Huang , et al. May 9, 2 | 2006-05-09 |
High voltage and low on-resistance LDMOS transistor having radiation structure and isolation effect App 20060033156 - Huang; Chih-Feng ;   et al. | 2006-02-16 |
CMOS compatible process with different-voltage devices App 20060030107 - Huang; Chih-Feng ;   et al. | 2006-02-09 |
High voltage LDMOS transistor having an isolated structure Grant 6,995,428 - Huang , et al. February 7, 2 | 2006-02-07 |
Process of fabricating high resistance CMOS resistor App 20050227430 - Huang, Chih-Feng ;   et al. | 2005-10-13 |
High voltage LDMOS transistor having an isolated structure App 20050184338 - Huang, Chih-Feng ;   et al. | 2005-08-25 |
Isolated high-voltage LDMOS transistor having a split well structure Grant 6,903,421 - Huang , et al. June 7, 2 | 2005-06-07 |
High voltage and low on-resistance LDMOS transistor having equalized capacitance Grant 6,873,011 - Huang , et al. March 29, 2 | 2005-03-29 |