Chen; Yuanning

Patent Applications and Registrations

Patent applications and USPTO patent grants for Chen; Yuanning.The latest application filed is for "low temperature sub-nanometer periodic stack dielectrics".

Company Profile

2.17.23

Chen; Yuanning - Plano TX
Chen; Yuanning - Orlando FL

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Low temperature sub-nanometer periodic stack dielectrics Grant 11,004,612 - Chen , et al. May 11, 2	2021-05-11
Low Temperature Sub-nanometer Periodic Stack Dielectrics App 20200294722 - Chen; Yuanning ; et al.	2020-09-17
Hybrid Energy Harvesting Device App 20160094072 - Chen; Yuanning ; et al.	2016-03-31
Self-powered integrated circuit with photovoltaic cell Grant 9,048,151 - Chen , et al. June 2, 2	2015-06-02
Self-powered integrated circuit with multi-junction photovoltaic cell Grant 8,883,541 - Chen , et al. November 11, 2	2014-11-11
Self-powered Integrated Circuit With Multi-junction Photovoltaic Cell App 20130295711 - Chen; Yuanning ; et al.	2013-11-07
Self-powered integrated circuit with multi-junction photovoltaic cell Grant 8,552,470 - Chen , et al. October 8, 2	2013-10-08
Self-powered Integrated Circuit With Multi-junction Photovoltaic Cell App 20120126247 - Chen; Yuanning ; et al.	2012-05-24
Self-powered Integrated Circuit With Photovoltaic Cell App 20120126298 - Chen; Yuanning ; et al.	2012-05-24
Integrated circuit with metal silicide regions Grant 7,800,226 - Chen , et al. September 21, 2	2010-09-21
Annealing to improve edge roughness in semiconductor technology Grant 7,704,883 - Butler , et al. April 27, 2	2010-04-27
Using oxynitride spacer to reduce parasitic capacitance in CMOS devices Grant 7,667,275 - Chen , et al. February 23, 2	2010-02-23
Method for manufacturing a semiconductor device having improved across chip implant uniformity Grant 7,569,464 - Kirmse , et al. August 4, 2	2009-08-04
Stacked Poly Structure To Reduce The Poly Particle Count In Advanced Cmos Technology App 20080251864 - Chen; Yuanning ; et al.	2008-10-16
Method For Manufacturing A Semiconductor Device Having Improved Across Chip Implant Uniformity App 20080153273 - Kirmse; Karen H.R. ; et al.	2008-06-26
Annealing To Improve Edge Roughness In Semiconductor Technology App 20080150045 - Butler; Stephanie W. ; et al.	2008-06-26
Reduction Of Dopant Loss In A Gate Structure App 20070284608 - Chen; Yuanning ; et al.	2007-12-13
Integrated circuit with metal silicide regions App 20070252220 - Chen; Yuanning ; et al.	2007-11-01
Reduction of dopant loss in a gate structure Grant 7,276,408 - Chen , et al. October 2, 2	2007-10-02
Method for forming metal silicide regions in an integrated circuit Grant 7,250,356 - Chen , et al. July 31, 2	2007-07-31
Process for oxide fabrication using oxidation steps below and above a threshold temperature Grant 7,148,153 - Chen , et al. December 12, 2	2006-12-12
Using Oxynitride Spacer to Reduce Parasitic Capacitance in CMOS Devices App 20060216882 - Chen; Yuanning ; et al.	2006-09-28
Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technology Grant 7,033,897 - Chen , et al. April 25, 2	2006-04-25
Using oxynitride spacer to reduce parasitic capacitance in CMOS devices App 20060054934 - Chen; Yuanning ; et al.	2006-03-16
Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technology App 20050263834 - Chen, Yuanning ; et al.	2005-12-01
Electronic circuit structure with improved dielectric properties Grant 6,930,006 - Bourdelle , et al. August 16, 2	2005-08-16
Encapsulated spacer with low dielectric constant material to reduce the parasitic capacitance between gate and drain in CMOS technology App 20050087775 - Chen, Yuanning ; et al.	2005-04-28
Reduction of dopant loss in a gate structure App 20050079655 - Chen, Yuanning ; et al.	2005-04-14
Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer App 20040113206 - Chen, Yuanning ; et al.	2004-06-17
Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer App 20040099964 - Chen, Yuanning ; et al.	2004-05-27
Use of hafnium silicon oxynitride as the cap layer of the sidewall spacer App 20040094782 - Chen, Yuanning ; et al.	2004-05-20
Method for forming metal silicide regions in an integrated circuit App 20040053485 - Chen, Yuanning ; et al.	2004-03-18
Process for oxide fabrication using oxidation steps below and above a threshold temperature App 20030143863 - Chen, Yuanning ; et al.	2003-07-31
Process for oxide fabrication using oxidation steps below and above a threshold temperature App 20030119337 - Chen, Yuanning ; et al.	2003-06-26
Method of making a graded grown, high quality oxide layer for a semiconductor device Grant 6,541,394 - Chen , et al. April 1, 2	2003-04-01
High quality oxide for use in integrated circuits Grant 6,492,712 - Chen , et al. December 10, 2	2002-12-10
Electronic circuit structure with improved dielectric properties App 20020163050 - Bourdelle, Konstantin K. ; et al.	2002-11-07

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