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Self-ionized And Inductively-coupled Plasma For Sputtering And Resputtering App 20180327893 - DING; Peijun ;   et al. | 2018-11-15 |
Self-ionized and inductively-coupled plasma for sputtering and resputtering Grant 10,047,430 - Ding , et al. August 14, 2 | 2018-08-14 |
Self-ionized And Inductively-coupled Plasma For Sputtering And Resputtering App 20140305802 - DING; Peijun ;   et al. | 2014-10-16 |
Self-ionized and inductively-coupled plasma for sputtering and resputtering Grant 8,696,875 - Ding , et al. April 15, 2 | 2014-04-15 |
Self-ionized and inductively-coupled plasma for sputtering and resputtering Grant 8,668,816 - Ding , et al. March 11, 2 | 2014-03-11 |
Self-ionized And Inductively-coupled Plasma For Sputtering And Resputtering App 20090233438 - DING; Peijun ;   et al. | 2009-09-17 |
Methods and apparatus for forming barrier layers in high aspect ratio vias Grant 7,547,644 - Chen , et al. June 16, 2 | 2009-06-16 |
Self-ionized And Inductively-coupled Plasma For Sputtering And Resputtering App 20080110747 - DING; Peijun ;   et al. | 2008-05-15 |
Sputtering using an unbalanced magnetron Grant 7,335,282 - Fu , et al. February 26, 2 | 2008-02-26 |
Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement Grant 7,294,574 - Ding , et al. November 13, 2 | 2007-11-13 |
Reliability Barrier Integration For Cu Application App 20070151861 - XI; MING ;   et al. | 2007-07-05 |
Controlled multi-step magnetron sputtering process App 20070095654 - Gopalraja; Praburam ;   et al. | 2007-05-03 |
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug Grant 7,112,528 - Chen , et al. September 26, 2 | 2006-09-26 |
Reliability barrier integration for Cu application Grant 7,026,238 - Xi , et al. April 11, 2 | 2006-04-11 |
Methods and apparatus for forming barrier layers in high aspect ratio vias App 20060057843 - Chen; Fusen ;   et al. | 2006-03-16 |
Sputter deposition and etching of metallization seed layer for overhang and sidewall improvement App 20060030151 - Ding; Peijun ;   et al. | 2006-02-09 |
Multi-step magnetron sputtering process Grant 6,991,709 - Gopalraja , et al. January 31, 2 | 2006-01-31 |
Methods and apparatus for forming barrier layers in high aspect ratio vias Grant 6,974,771 - Chen , et al. December 13, 2 | 2005-12-13 |
Methods and apparatus for forming barrier layers in high aspect ratio vias App 20050266682 - Chen, Fusen ;   et al. | 2005-12-01 |
Controlled multi-step magnetron sputtering process App 20050255700 - Gopalraja, Praburam ;   et al. | 2005-11-17 |
Self-ionized and inductively-coupled plasma for sputtering and resputtering App 20050255691 - Ding, Peijun ;   et al. | 2005-11-17 |
Method of application of electrical biasing to enhance metal deposition Grant 6,913,680 - Zheng , et al. July 5, 2 | 2005-07-05 |
Partially filling copper seed layer Grant 6,899,796 - Wang , et al. May 31, 2 | 2005-05-31 |
Diffusion enhanced ion plating for copper fill Grant 6,884,329 - Wang , et al. April 26, 2 | 2005-04-26 |
Multi-step magnetron sputtering process App 20050056536 - Gopalraja, Praburam ;   et al. | 2005-03-17 |
Sputtering using an unbalanced magnetron App 20050051424 - Fu, Jianming ;   et al. | 2005-03-10 |
Self-ionized and inductively-coupled plasma for sputtering and resputtering App 20050006222 - Ding, Peijun ;   et al. | 2005-01-13 |
Methods and apparatus for forming barrier layers in high aspect ratio vias App 20040266175 - Chen, Fusen ;   et al. | 2004-12-30 |
Oblique ion milling of via metallization App 20040222082 - Gopalraja, Praburam ;   et al. | 2004-11-11 |
Reliability barrier integration for Cu application App 20040209460 - Xi, Ming ;   et al. | 2004-10-21 |
Method and apparatus for improved electroplating fill of an aperture Grant 6,797,620 - Lewis , et al. September 28, 2 | 2004-09-28 |
Self ionized sputtering using a high density plasma source Grant 6,790,323 - Fu , et al. September 14, 2 | 2004-09-14 |
Operating a magnetron sputter reactor in two modes Grant 6,787,006 - Gopalraja , et al. September 7, 2 | 2004-09-07 |
Methods and apparatus for forming barrier layers in high aspect ratio vias Grant 6,784,096 - Chen , et al. August 31, 2 | 2004-08-31 |
Shaping features in sputter deposition App 20040140196 - Gopalraja, Praburam ;   et al. | 2004-07-22 |
Diffusion enhanced ion plating for copper fill App 20040134768 - Wang, Wei D. ;   et al. | 2004-07-15 |
Partially filling copper seed layer App 20040134769 - Wang, Wei D. ;   et al. | 2004-07-15 |
Low temperature integrated metallization process and apparatus Grant 6,743,714 - Mosely , et al. June 1, 2 | 2004-06-01 |
Low temperature integrated metallization process and apparatus Grant 6,726,776 - Mosely , et al. April 27, 2 | 2004-04-27 |
Wafer backside electrical contact for electrochemical deposition and electrochemical mechanical polishing App 20040055893 - Lubomirsky, Dmitry ;   et al. | 2004-03-25 |
Methods and apparatus for forming barrier layers in high aspect ratio vias App 20040048461 - Chen, Fusen ;   et al. | 2004-03-11 |
Inductive plasma loop enhancing magnetron sputtering Grant 6,679,981 - Pan , et al. January 20, 2 | 2004-01-20 |
Method and apparatus for improved electroplating fill of an aperture App 20030194850 - Lewis, John S. ;   et al. | 2003-10-16 |
Fully planarized dual damascene metallization using copper line interconnect and selective CVD aluminum plug App 20030161943 - Chen, Liang-Yuh ;   et al. | 2003-08-28 |
Method and associated apparatus to mechanically enhance the deposition of a metal film within a feature Grant 6,610,189 - Wang , et al. August 26, 2 | 2003-08-26 |
Self-ionized and inductively-coupled plasma for sputtering and resputtering App 20030116427 - Ding, Peijun ;   et al. | 2003-06-26 |
Bi-layer etch stop for inter-level via Grant 6,566,258 - Dixit , et al. May 20, 2 | 2003-05-20 |
Method to eliminate coil sputtering in an ICP source Grant 6,514,390 - Xu , et al. February 4, 2 | 2003-02-04 |
Reliability barrier integration for Cu application App 20030017695 - Chen, Fusen ;   et al. | 2003-01-23 |
Reliability barrier integration for Cu application App 20030013297 - Chen, Fusen ;   et al. | 2003-01-16 |
Integrated barrier layer structure for copper contact level metallization App 20020192948 - Chen, Fusen ;   et al. | 2002-12-19 |
Operating a magnetron sputter reactor in two modes App 20020185370 - Gopalraja, Praburam ;   et al. | 2002-12-12 |
Integrated copper fill process Grant 6,485,618 - Gopalraja , et al. November 26, 2 | 2002-11-26 |
Vault shaped target and magnetron operable in two sputtering modes Grant 6,451,177 - Gopalraja , et al. September 17, 2 | 2002-09-17 |
Atomically thin highly resistive barrier layer in a copper via App 20020117399 - Chen, Fusen ;   et al. | 2002-08-29 |
Low temperature integrated metallization process and apparatus App 20020102842 - Mosley, Roderick Craig ;   et al. | 2002-08-01 |
Method and associated apparatus to mechanically enhance the deposition of a metal film within a feature App 20020084189 - Wang, Hougong ;   et al. | 2002-07-04 |
Processes to improve electroplating fill Grant 6,399,479 - Chen , et al. June 4, 2 | 2002-06-04 |
Reliability barrier integration for Cu application App 20020060363 - Xi, Ming ;   et al. | 2002-05-23 |
Tailoring of a wetting/barrier layer to reduce electromigration in an aluminum interconnect Grant 6,383,915 - Su , et al. May 7, 2 | 2002-05-07 |
Integrated copper fill process App 20010050226 - Gopalraja, Praburam ;   et al. | 2001-12-13 |
Vault shaped target and magnetron having both distributed and localized magnets App 20010032783 - Gopalraja, Praburam ;   et al. | 2001-10-25 |
High-density plasma for ionized metal deposition capable of exciting a plasma wave Grant 6,306,265 - Fu , et al. October 23, 2 | 2001-10-23 |
Integrated process for copper via filling using a magnetron and target producing highly energetic ions Grant 6,277,249 - Gopalraja , et al. August 21, 2 | 2001-08-21 |
Integrated process for copper via filling Grant 6,274,008 - Gopalraja , et al. August 14, 2 | 2001-08-14 |
Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source Grant 6,238,528 - Xu , et al. May 29, 2 | 2001-05-29 |
Titanium nitride barrier layers Grant 6,238,803 - Fu , et al. May 29, 2 | 2001-05-29 |
Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layer Grant 6,217,721 - Xu , et al. April 17, 2 | 2001-04-17 |
Low temperature integrated via and trench fill process and apparatus Grant 6,139,697 - Chen , et al. October 31, 2 | 2000-10-31 |
Deposition film orientation and reflectivity improvement using a self-aligning ultra-thin layer Grant 6,120,844 - Chen , et al. September 19, 2 | 2000-09-19 |
Method for forming titanium silicide in situ Grant 6,110,821 - Kohara , et al. August 29, 2 | 2000-08-29 |
Blanket-selective chemical vapor deposition using an ultra-thin nucleation layer Grant 6,066,358 - Guo , et al. May 23, 2 | 2000-05-23 |
Process for forming improved titanium-containing barrier layers Grant 6,007,684 - Fu , et al. December 28, 1 | 1999-12-28 |
Hybrid Johnsen-Rahbek electrostatic chuck having highly resistive mesas separating the chuck from a wafer supported thereupon and method of fabricating same Grant 5,903,428 - Grimard , et al. May 11, 1 | 1999-05-11 |
Titanium nitride barrier layers Grant 5,895,266 - Fu , et al. April 20, 1 | 1999-04-20 |
Low temperature integrated metallization process and apparatus Grant 5,877,087 - Mosely , et al. March 2, 1 | 1999-03-02 |
Process for forming improved titanium-containing barrier layers Grant 5,858,184 - Fu , et al. January 12, 1 | 1999-01-12 |
Ultrasonic wave assisted contact hole filling Grant 5,851,344 - Xu , et al. December 22, 1 | 1998-12-22 |
Cover layer for a substrate support chuck and method of fabricating same Grant 5,841,624 - Xu , et al. November 24, 1 | 1998-11-24 |
Ultrasonic wave assisted contact hole filling Grant 5,610,103 - Xu , et al. March 11, 1 | 1997-03-11 |
Method for forming local interconnect for integrated circuits Grant 5,391,520 - Chen , et al. February 21, 1 | 1995-02-21 |
Local interconnect for integrated circuits Grant 5,319,245 - Chen , et al. June 7, 1 | 1994-06-07 |
Method for reducing the surface reflectance of a metal layer during semiconductor processing Grant 4,933,304 - Chen , et al. June 12, 1 | 1990-06-12 |