| Patent | Date |
|---|
Guided Tissue Regeneration Membrane
App 20140080096 - Chang; Chao-Fu ; et al. | 2014-03-20 |
Degradable Hemostatic Sponge And Extrusion System And Method For Manufacturing The Same
App 20120065604 - Chang; Chao-Fu ; et al. | 2012-03-15 |
Guided Tissue Regeneration Membrane
App 20120065741 - Chang; Chao-Fu ; et al. | 2012-03-15 |
Non-volatile memory and fabricating method thereof
Grant 7,408,220 - Kim , et al. August 5, 2 | 2008-08-05 |
Method of fabricating memory
Grant 7,344,938 - Chang , et al. March 18, 2 | 2008-03-18 |
Method Of Fabricating Memeory
App 20070259493 - CHANG; KENT KUOHUA ; et al. | 2007-11-08 |
Method of fabricating memory
Grant 7,229,876 - Chang , et al. June 12, 2 | 2007-06-12 |
Non-volatile Memory And Fabricating Method Thereof
App 20070026609 - Kim; Jongoh ; et al. | 2007-02-01 |
Non-volatile Memory And Fabricating Method Thereof
App 20070010055 - Kim; Jongoh ; et al. | 2007-01-11 |
Non-volatile memory and fabricating method thereof
Grant 7,157,333 - Kim , et al. January 2, 2 | 2007-01-02 |
Method of fabricating memeory
App 20060270142 - Chang; Kent Kuohua ; et al. | 2006-11-30 |
Method of fabricating multi-bit flash memory
Grant 7,098,096 - Chang August 29, 2 | 2006-08-29 |
Memory Cell
App 20060157774 - Chang; Kent Kuohua | 2006-07-20 |
High-K tunneling dielectric for read only memory device and fabrication method thereof
Grant 7,009,245 - Chang March 7, 2 | 2006-03-07 |
Method for fabricating metal silicide
Grant 6,884,473 - Chang April 26, 2 | 2005-04-26 |
Silicon nitride read-only-memory
Grant 6,867,463 - Chang March 15, 2 | 2005-03-15 |
Method for fabricating locally strained channel
Grant 6,858,506 - Chang February 22, 2 | 2005-02-22 |
SiN ROM and method of fabricating the same
Grant 6,838,345 - Chang January 4, 2 | 2005-01-04 |
[high-k Tunneling Dielectric For Read Only Memory Device And Fabrication Method Thereof]
App 20040262672 - Chang, Kent Kuohua | 2004-12-30 |
Mask ROM
Grant 6,831,851 - Jong , et al. December 14, 2 | 2004-12-14 |
Method and apparatus for improved performance of flash memory cell devices
Grant 6,812,521 - He , et al. November 2, 2 | 2004-11-02 |
Method for fabricating non-volatile memory having P-type floating gate
Grant 6,812,099 - Lin , et al. November 2, 2 | 2004-11-02 |
High-K tunneling dielectric for read only memory device and fabrication method thereof
Grant 6,797,567 - Chang September 28, 2 | 2004-09-28 |
Memory device and method for fabricating the same
Grant 6,777,285 - Huang , et al. August 17, 2 | 2004-08-17 |
Hexagonal gate structure for radiation resistant flash memory cell
Grant 6,777,742 - Jong , et al. August 17, 2 | 2004-08-17 |
Method of boosting wafer cleaning efficiency and increasing process yield
Grant 6,773,933 - Ma , et al. August 10, 2 | 2004-08-10 |
Method For Preventing Corrosion Of Tungsten Plug
App 20040152305 - YIU, CHUNG-LUNG ; et al. | 2004-08-05 |
[method Of Fabricating Multi-bit Flash Memory]
App 20040137683 - Chang, Kent Kuohua | 2004-07-15 |
Nonvolatile memory cell for prevention of second bit effect
Grant 6,762,467 - Jong , et al. July 13, 2 | 2004-07-13 |
[method Of Fabricating Shallow Trench Isolation]
App 20040126962 - Ma, Szu-Tsun ; et al. | 2004-07-01 |
Silicon Nitride Read-only-mrmory And Fabricating Method Thereof
App 20040119108 - Chang, Kent Kuohua | 2004-06-24 |
Method For Fabricating Metal Silicide
App 20040121592 - CHANG, KENT KUOHUA | 2004-06-24 |
SiN ROM AND METHOD OF FABRICATING THE SAME
App 20040121542 - Chang, Kent Kuohua | 2004-06-24 |
High-k Tunneling Dielectric For Read Only Memory Device And Fabrication Method Thereof
App 20040121544 - Chang, Kent Kuohua | 2004-06-24 |
[method For Fabricating Locally Strained Channel ]
App 20040115888 - Chang, Kent Kuohua | 2004-06-17 |
[memory Device And Method For Fabricating The Same]
App 20040110344 - Huang, Weng-Hsing ; et al. | 2004-06-10 |
Method for fabricating raised source/drain of semiconductor device
Grant 6,737,324 - Chang May 18, 2 | 2004-05-18 |
Method of fabricating multi-bit flash memory
Grant 6,720,613 - Chang April 13, 2 | 2004-04-13 |
Method of fabricating a non-volatile memory device to eliminate charge loss
Grant 6,713,388 - Tseng , et al. March 30, 2 | 2004-03-30 |
Memory device structure with composite buried and raised bit line
Grant 6,710,381 - Huang , et al. March 23, 2 | 2004-03-23 |
Fabrication method for shallow trench isolation
Grant 6,706,612 - Ma , et al. March 16, 2 | 2004-03-16 |
Hexagonal gate structure for radiation resistant flash memory cell
App 20040041197 - Jong, Fuh-Cheng ; et al. | 2004-03-04 |
Structure of a memory device and fabrication method thereof
App 20040031983 - Huang, Weng-Hsing ; et al. | 2004-02-19 |
Method of boosting wafer cleaning efficiency and increasing process yield
App 20040005780 - Ma, Szu-Tsun ; et al. | 2004-01-08 |
Fabrication method for shallow trench isolation
App 20040005765 - Ma, Szu-Tsun ; et al. | 2004-01-08 |
Method for improving the reliability of flash memories
Grant 6,673,720 - Huang , et al. January 6, 2 | 2004-01-06 |
Twin bit cell flash memory device
Grant 6,674,133 - Chang January 6, 2 | 2004-01-06 |
Method for fabricating raised source/drain of semiconductor device
App 20040002194 - Chang, Kent Kuohua | 2004-01-01 |
Structure of discrete NROM cell
Grant 6,670,672 - Chang , et al. December 30, 2 | 2003-12-30 |
Structure Of Discrete Nrom Cell
App 20030234421 - Chang, Kent Kuohua ; et al. | 2003-12-25 |
Method for fabricating non-volatile memory having P-type floating gate
App 20030199143 - Lin, Hung-Sui ; et al. | 2003-10-23 |
Mask ROM
App 20030198074 - Jong, Fuh-Cheng ; et al. | 2003-10-23 |
Nonvolatile memory cell for prevention from second bit effect
App 20030193062 - Jong, Fuh-Cheng ; et al. | 2003-10-16 |
Method for reducing particles and defects during flash memory fabrication
App 20030181008 - Huang, Weng-Hsing ; et al. | 2003-09-25 |
Method for improving reliability of STI
App 20030181049 - Huang, Weng-Hsing ; et al. | 2003-09-25 |
STI method for semiconductor processes
App 20030181048 - Huang, Weng-Hsing ; et al. | 2003-09-25 |
Method for reducing random bit failures of flash memories
App 20030181007 - Huang, Weng-Hsing ; et al. | 2003-09-25 |
Method of fabricating a flash memory cell
App 20030181051 - Chang, Kent Kuohua ; et al. | 2003-09-25 |
Memory device with low resistance buried bit lines
Grant 6,624,460 - Huang , et al. September 23, 2 | 2003-09-23 |
Method of manufacturing a flash memory
Grant 6,620,698 - Chen , et al. September 16, 2 | 2003-09-16 |
Method for improving the reliability of flash memories
App 20030160241 - Huang, Weng-Hsing ; et al. | 2003-08-28 |
EEPROM memory cell with high radiation resistance
App 20030155605 - Jong, Fuh-Cheng ; et al. | 2003-08-21 |
Method for suppressing short channel effect of a semiconductor device
App 20030148564 - Chang, Kent Kuohua | 2003-08-07 |
Method for forming gate dielectric layer in NROM
Grant 6,602,805 - Chang August 5, 2 | 2003-08-05 |
Method of fabricating NROM memory cell
Grant 6,599,801 - Chang , et al. July 29, 2 | 2003-07-29 |
Method of fabricating a MOS transistor with low gate depletion
App 20030113960 - Chang, Kent Kuohua | 2003-06-19 |
Method of fabricating a MOS transistor with a shallow junction
App 20030113989 - Chang, Kent Kuohua | 2003-06-19 |
Twin bit cell flash memory device and its fabricating method
App 20030075738 - Chang, Kent Kuohua | 2003-04-24 |
Twin bit cell flash memory device
Grant 6,538,292 - Chang , et al. March 25, 2 | 2003-03-25 |
Structure of flash memory
App 20030006451 - Chang, Kent Kuohua | 2003-01-09 |
Method of fabricating a non-volatile memory device to eliminate charge loss
App 20030003658 - Tseng, Uway ; et al. | 2003-01-02 |
Method of fabricating a nitride read-only-memory cell vertical structure
Grant 6,486,028 - Chang , et al. November 26, 2 | 2002-11-26 |
Method of reading two-bit memories of NROM cell
Grant 6,487,114 - Jong , et al. November 26, 2 | 2002-11-26 |
Method for preventing gate depletion effects of MOS transistor
App 20020173104 - Chang, Kent Kuohua | 2002-11-21 |
Method for fabricating an ONO layer
App 20020168869 - Chang, Kent Kuohua ; et al. | 2002-11-14 |
Twin bit cell flash memory device
App 20020149066 - Chang, Kent Kuohua ; et al. | 2002-10-17 |
Method for fabricating a nitride read-only-memory (NROM)
Grant 6,461,949 - Chang , et al. October 8, 2 | 2002-10-08 |
Method For Fabricating A Nitride Read-only -memory (nrom)
App 20020142569 - Chang, Kent Kuohua ; et al. | 2002-10-03 |
Method of manufacturing flash memory
App 20020137289 - Chang, Kent Kuohua | 2002-09-26 |
Method of manufacturing flash memory
Grant 6,448,136 - Chang , et al. September 10, 2 | 2002-09-10 |
Method of reading two-bit memories of NROM cell
App 20020118566 - Jong, Fuh-Cheng ; et al. | 2002-08-29 |
Method for forming contacts of memory devices using an etch stop layer
App 20020119618 - Tseng, Uway ; et al. | 2002-08-29 |
Method for preventing electron secondary injection in a pocket implantation process
App 20020119645 - Chang, Kent Kuohua ; et al. | 2002-08-29 |
Method for forming gate dielectric layer in NROM
App 20020086548 - Chang, Kent Kuohua | 2002-07-04 |
Non-volatile flash memory cell with asymmetric threshold voltage
App 20020074590 - Jong, Fu-Cheng ; et al. | 2002-06-20 |
Non-volatile flash memory cell with application of drain induced barrier lowering phenomenon
App 20020074591 - Jong, Fuh-Cheng ; et al. | 2002-06-20 |
Method for improving contact reliability in semiconductor devices
App 20020072217 - Tseng, Uway ; et al. | 2002-06-13 |
Method of manufacturing flash memory
App 20020072175 - Chang, Kent Kuohua ; et al. | 2002-06-13 |
Non-volatile flash memory cell with short floating gate
App 20020066923 - Jong, Fu-Cheng ; et al. | 2002-06-06 |
Structure of NROM and fabricating method thereof
App 20020055230 - Chang, Kent Kuohua | 2002-05-09 |
Method of forming ono stacked films and DCS tungsten silicide gate to improve polycide gate performance for flash memory devices
Grant 6,380,029 - Chang , et al. April 30, 2 | 2002-04-30 |
High yield performance semiconductor process flow for NAND flash memory products
Grant 6,362,049 - Cagnina , et al. March 26, 2 | 2002-03-26 |
Method for forming a nonvolatile memory with optimum bias condition
Grant 6,348,381 - Jong , et al. February 19, 2 | 2002-02-19 |
Method Of Forming High K Tantalum Pentoxide Ta205 Instead Of Ono Stacked Films To Increase Coupling Ratio And Improve Reliability For Flash Memory Devices
App 20010046738 - AU, KENNETH WO-WAI ; et al. | 2001-11-29 |
Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devices
Grant 6,309,927 - Au , et al. October 30, 2 | 2001-10-30 |
Manufacturing process to eliminate ONO fence material in high density NAND-type flash memory devices
Grant 6,281,078 - Chang , et al. August 28, 2 | 2001-08-28 |
Method for reduced gate aspect ratio to improve gap-fill after spacer etch
App 20010016386 - Wang, John JianShi ; et al. | 2001-08-23 |
Method for contact size control for nand technology
App 20010006847 - Wang, John JianShi ; et al. | 2001-07-05 |
Method for monitoring second gate over-etch in a semiconductor device
App 20010005633 - Wang, John JianShi ; et al. | 2001-06-28 |
Method for providing a dopant level for polysilicon for flash memory devices
Grant 6,218,689 - Chang , et al. April 17, 2 | 2001-04-17 |
Method of forming select gate to improve reliability and performance for NAND type flash memory devices
Grant 6,204,159 - Chang , et al. March 20, 2 | 2001-03-20 |
Method for forming flash memory devices
Grant 6,180,454 - Chang , et al. January 30, 2 | 2001-01-30 |
Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates
Grant 6,114,230 - Chang , et al. September 5, 2 | 2000-09-05 |
RTCVD oxide and N.sub.2 O anneal for top oxide of ONO film
Grant 6,063,666 - Chang , et al. May 16, 2 | 2000-05-16 |
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