loadpatents
name:-0.77792501449585
name:-0.11010193824768
name:-0.0004878044128418
Catabay; Wilbur G. Patent Filings

Catabay; Wilbur G.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Catabay; Wilbur G..The latest application filed is for "dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures".

Company Profile
0.55.28
  • Catabay; Wilbur G. - Saratoga CA
  • Catabay; Wilbur G. - Santa Clara CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures
Grant 8,043,968 - Cui , et al. October 25, 2
2011-10-25
Dielectric Barrier Layer For Increasing Electromigration Lifetimes In Copper Interconnect Structures
App 20100200993 - Cui; Hao ;   et al.
2010-08-12
Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures
Grant 7,728,433 - Cui , et al. June 1, 2
2010-06-01
Forming copper interconnects with Sn coatings
Grant 7,675,177 - Lu , et al. March 9, 2
2010-03-09
Methods and structure for forming copper barrier layers integral with semiconductor substrates structures
Grant 7,646,077 - Lu , et al. January 12, 2
2010-01-12
Dielectric Barrier Films For Use As Copper Barrier Layers In Semiconductor Trench And Via Structures
App 20080303155 - LU; Hong-Qiang ;   et al.
2008-12-11
Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures
Grant 7,427,563 - Lu , et al. September 23, 2
2008-09-23
Multi-step process for forming a barrier film for use in copper layer formation
Grant 7,413,984 - Catabay , et al. August 19, 2
2008-08-19
Dual layer barrier film techniques to prevent resist poisoning
Grant 7,393,780 - Lu , et al. July 1, 2
2008-07-01
Incorporating dopants to enhance the dielectric properties of metal silicates
Grant 7,312,127 - Lo , et al. December 25, 2
2007-12-25
Electro chemical mechanical polishing method and device for planarizing semiconductor surfaces
Grant 7,285,145 - Zhu , et al. October 23, 2
2007-10-23
Dielectric barrier layer for increasing electromigration lifetimes in copper interconnect structures
Grant 7,276,441 - Cui , et al. October 2, 2
2007-10-02
Interconnect dielectric tuning
Grant 7,259,462 - Lo , et al. August 21, 2
2007-08-21
Dielectric Barrier Layer For Increasing Electromigration Lifetimes In Copper Interconnect Structures
App 20070190784 - Cui; Hao ;   et al.
2007-08-16
Multi-step Process For Forming A Barrier Film For Use In Copper Layer Formation
App 20070178692 - Catabay; Wilbur G. ;   et al.
2007-08-02
Planarization with reduced dishing
App 20070163993 - Catabay; Wilbur G. ;   et al.
2007-07-19
Multi-step process for forming a barrier film for use in copper layer formation
Grant 7,229,923 - Catabay , et al. June 12, 2
2007-06-12
Planarization with reduced dishing
Grant 7,220,362 - Catabay , et al. May 22, 2
2007-05-22
Dual layer barrier film techniques to prevent resist poisoning
App 20060205203 - Lu; Hong-Qiang ;   et al.
2006-09-14
Incorporating dopants to enhance the dielectric properties of metal silicates
App 20060166496 - Lo; Wai ;   et al.
2006-07-27
Interconnect dielectric tuning
Grant 7,081,406 - Lo , et al. July 25, 2
2006-07-25
Dual layer barrier film techniques to prevent resist poisoning
Grant 7,071,094 - Lu , et al. July 4, 2
2006-07-04
Incorporating dopants to enhance the dielectric properties of metal silicates
Grant 7,064,062 - Lo , et al. June 20, 2
2006-06-20
Planarization with reduced dishing
App 20060118523 - Catabay; Wilbur G. ;   et al.
2006-06-08
Planarization with reduced dishing
Grant 7,029,591 - Catabay , et al. April 18, 2
2006-04-18
Interconnection capacitance reduction
App 20060035457 - Carter; Richard J. ;   et al.
2006-02-16
Interconnect dielectric tuning
App 20060035455 - Lo; Wai ;   et al.
2006-02-16
Method for improved local planarity control during electropolishing
App 20050224358 - Kwak, Byung-Sung ;   et al.
2005-10-13
Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures
App 20050208758 - Lu, Hong-Qiang ;   et al.
2005-09-22
Dielectric barrier films for use as copper barrier layers in semiconductor trench and via structures
Grant 6,939,800 - Lu , et al. September 6, 2
2005-09-06
Viscous electropolishing system
Grant 6,935,933 - Sukharev , et al. August 30, 2
2005-08-30
Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for integrated circuit structure
Grant 6,930,056 - Catabay , et al. August 16, 2
2005-08-16
Ultra low dielectric constant thin film
App 20050176216 - Cui, Hao ;   et al.
2005-08-11
Incorporating dopants to enhance the dielectric properties of metal silicates
App 20050127458 - Lo, Wai ;   et al.
2005-06-16
Ultra low dielectric constant thin film
Grant 6,905,909 - Cui , et al. June 14, 2
2005-06-14
Ultra Low Dielectric Constant Thin Film
App 20050090036 - Cui, Hao ;   et al.
2005-04-28
Forming copper interconnects with Sn coatings
Grant 6,884,720 - Lu , et al. April 26, 2
2005-04-26
Process for planarizing upper surface of damascene wiring structure for integrated circuit structures
Grant 6,881,664 - Catabay , et al. April 19, 2
2005-04-19
Via and metal line interface capable of reducing the incidence of electro-migration induced voids
Grant 6,875,693 - May , et al. April 5, 2
2005-04-05
Via and metal line interface capable of reducing the incidence of electro-migration induced voids
App 20050064708 - May, Charles E. ;   et al.
2005-03-24
Electro chemical mechanical polishing method
Grant 6,858,531 - Zhu , et al. February 22, 2
2005-02-22
Dual layer barrier film techniques to prevent resist poisoning
App 20040253784 - Lu, Hong-Qiang ;   et al.
2004-12-16
Interconnect integration
App 20040238960 - Sukharev, Valeriy ;   et al.
2004-12-02
Planarization with reduced dishing
App 20040238492 - Catabay, Wilbur G. ;   et al.
2004-12-02
Dual layer barrier film techniques to prevent resist poisoning
Grant 6,812,134 - Lu , et al. November 2, 2
2004-11-02
Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning
Grant 6,800,940 - Catabay , et al. October 5, 2
2004-10-05
Integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines
Grant 6,794,756 - Li , et al. September 21, 2
2004-09-21
Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structure
Grant 6,790,784 - Catabay , et al. September 14, 2
2004-09-14
Interconnect integration
Grant 6,777,807 - Sukharev , et al. August 17, 2
2004-08-17
Multi-step process for forming a barrier film for use in copper layer formation
App 20040157425 - Catabay, Wilbur G. ;   et al.
2004-08-12
Method and structure for forming dielectric layers having reduced dielectric constants
Grant 6,774,057 - Lu , et al. August 10, 2
2004-08-10
In situ liner barrier
Grant 6,767,832 - Kumar , et al. July 27, 2
2004-07-27
Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same
Grant 6,756,674 - Catabay , et al. June 29, 2
2004-06-29
Diamond barrier layer
Grant 6,734,560 - Catabay , et al. May 11, 2
2004-05-11
Multi-step process for forming a barrier film for use in copper layer formation
Grant 6,727,177 - Catabay , et al. April 27, 2
2004-04-27
Anti-reflective coatings for use at 248 nm and 193 nm
Grant 6,686,272 - Lee , et al. February 3, 2
2004-02-03
Process for planarizing upper surface of damascene wiring structure for integrated circuit structures
App 20040009668 - Catabay, Wilbur G. ;   et al.
2004-01-15
Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structure
App 20030207594 - Catabay, Wilbur G. ;   et al.
2003-11-06
Process for forming integrated circuit structure comprising layer of low k dielectric material having antireflective properties in an upper surface
Grant 6,613,665 - Catabay , et al. September 2, 2
2003-09-02
Substrate processing system
App 20030084587 - Kumar, Kiran ;   et al.
2003-05-08
Barrier and seed layer system
App 20030064593 - Kumar, Kiran ;   et al.
2003-04-03
Diamond barrier layer
App 20030064588 - Catabay, Wilbur G. ;   et al.
2003-04-03
Process for treating porous low k dielectric material in damascene structure to form a non-porous dielectric diffusion barrier on etched via and trench surfaces in the porous low k dielectric material
Grant 6,537,896 - Catabay , et al. March 25, 2
2003-03-25
Process For Forming Composite Of Barrier Layers Of Dielectric Material To Inhibit Migration Of Copper From Copper Metal Interconnect Of Integrated Circuit Structure Into Adjacent Layer Of Low K Dielectric Material
Grant 6,528,423 - Catabay , et al. March 4, 2
2003-03-04
Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning
Grant 6,503,840 - Catabay , et al. January 7, 2
2003-01-07
Composite low dielectric constant film for integrated circuit structure
Grant 6,492,731 - Catabay , et al. December 10, 2
2002-12-10
Process for forming metal-filled openings in low dielectric constant dielectric material while inhibiting via poisoning
App 20020164877 - Catabay, Wilbur G. ;   et al.
2002-11-07
Diamond barrier layer
Grant 6,472,314 - Catabay , et al. October 29, 2
2002-10-29
Integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines
App 20020135040 - Li, Weidan ;   et al.
2002-09-26
Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning
App 20020123243 - Catabay, Wilbur G. ;   et al.
2002-09-05
Process for forming low K dielectric material between metal lines
Grant 6,423,630 - Catabay , et al. July 23, 2
2002-07-23
Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning
Grant 6,391,795 - Catabay , et al. May 21, 2
2002-05-21
Method to obtain a low resistivity and conformity chemical vapor deposition titanium film
Grant 6,297,555 - Zhao , et al. October 2, 2
2001-10-02
Process to prevent stress cracking of dielectric films on semiconductor wafers
Grant 6,232,658 - Catabay , et al. May 15, 2
2001-05-15
Plasma cleaning process for openings formed in at least one low dielectric constant insulation layer over copper metallization in integrated circuit structures
Grant 6,204,192 - Zhao , et al. March 20, 2
2001-03-20
Process for treating damaged surfaces of low dielectric constant organo silicon oxide insulation material to inhibit moisture absorption
Grant 6,028,015 - Wang , et al. February 22, 2
2000-02-22
Metal-filled via/contact opening with thin barrier layers in integrated circuit structure for fast response, and process for making same
Grant 5,994,775 - Zhao , et al. November 30, 1
1999-11-30
Method for improvement of TiN CVD film quality
Grant 5,956,613 - Zhao , et al. September 21, 1
1999-09-21
Low stress, highly conformal CVD metal thin film
Grant 5,953,631 - Zhao , et al. September 14, 1
1999-09-14
Etch process selective to cobalt silicide for formation of integrated circuit structures
Grant 5,933,757 - Yoshikawa , et al. August 3, 1
1999-08-03
Process for forming improved cobalt silicide layer on integrated circuit structure using two capping layers
Grant 5,902,129 - Yoshikawa , et al. May 11, 1
1999-05-11
Method of making a barrier layer for via or contact opening of integrated circuit structure
Grant 5,770,520 - Zhao , et al. June 23, 1
1998-06-23
Plasma clean with hydrogen gas
Grant 5,660,682 - Zhao , et al. August 26, 1
1997-08-26

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