Patent | Date |
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Controlled resistance integrated snubber for power switching device Grant 11,217,577 - Burke , et al. January 4, 2 | 2022-01-04 |
Controlled Resistance Integrated Snubber for Power Switching Device App 20200185377 - Burke; Hugo ;   et al. | 2020-06-11 |
Controlled resistance integrated snubber for power switching device Grant 10,593,664 - Burke , et al. | 2020-03-17 |
Method of forming a reliable and robust electrical contact Grant 10,388,591 - Burke A | 2019-08-20 |
Semiconductor devices and methods for forming a semiconductor device Grant 10,236,246 - Burke | 2019-03-19 |
Controlled Resistance Integrated Snubber for Power Switching Device App 20180182750 - Burke; Hugo ;   et al. | 2018-06-28 |
Method of forming a semiconductor structure having integrated snubber resistance Grant 9,966,464 - Kelkar , et al. May 8, 2 | 2018-05-08 |
Semiconductor Devices and Methods for Forming a Semiconductor Device App 20180019204 - BURKE; Hugo | 2018-01-18 |
Power semiconductor device with contiguous gate trenches and offset source trenches Grant 9,818,743 - Kelkar , et al. November 14, 2 | 2017-11-14 |
Buried bus and related method Grant 9,812,538 - Burke , et al. November 7, 2 | 2017-11-07 |
Power semiconductor device with a double metal contact and related method Grant 9,761,550 - Montgomery , et al. September 12, 2 | 2017-09-12 |
Method of Forming a Reliable and Robust Electrical Contact App 20170236771 - Burke; Hugo | 2017-08-17 |
Method for Fabricating a Shallow and Narrow Trench FET App 20170213909 - Henson; Timothy D. ;   et al. | 2017-07-27 |
Method of Forming a Semiconductor Structure Having Integrated Snubber Resistance App 20170186861 - Kelkar; Kapil ;   et al. | 2017-06-29 |
Reliable and robust electrical contact Grant 9,673,287 - Burke June 6, 2 | 2017-06-06 |
Buried Bus and Related Method App 20170154970 - Burke; Hugo ;   et al. | 2017-06-01 |
Method for fabricating a shallow and narrow trench FET and related structures Grant 9,653,597 - Henson , et al. May 16, 2 | 2017-05-16 |
Semiconductor structure having integrated snubber resistance Grant 9,627,328 - Kelkar , et al. April 18, 2 | 2017-04-18 |
Power semiconductor device with source trench and termination trench implants Grant 9,620,583 - Kelkar , et al. April 11, 2 | 2017-04-11 |
Power Semiconductor Device with a Double Metal Contact and Related Method App 20160233185 - Montgomery; Robert ;   et al. | 2016-08-11 |
Reliable and Robust Electrical Contact App 20160172454 - Burke; Hugo | 2016-06-16 |
Power semiconductor device with a double metal contact Grant 9,318,355 - Montgomery , et al. April 19, 2 | 2016-04-19 |
Power Semiconductor Device with Source Trench and Termination Trench Implants App 20160104766 - Kelkar; Kapil ;   et al. | 2016-04-14 |
Semiconductor Structure Having Integrated Snubber Resistance and Related Method App 20160104773 - Kelkar; Kapil ;   et al. | 2016-04-14 |
Power Semiconductor Device with Low RDSON and High Breakdown Voltage App 20150325685 - Henson; Timothy D. ;   et al. | 2015-11-12 |
Power Semiconductor Device with Contiguous Gate Trenches and Offset Source Trenches App 20140374825 - Kelkar; Kapil ;   et al. | 2014-12-25 |
Power Semiconductor Device with a Double Metal Contact App 20140327057 - Montgomery; Robert ;   et al. | 2014-11-06 |
Power semiconductor device including a double metal contact Grant 8,791,525 - Montgomery , et al. July 29, 2 | 2014-07-29 |
Trench MOSFET and method for fabricating same Grant 8,536,645 - Henson , et al. September 17, 2 | 2013-09-17 |
Trench MOSFET and Method for Fabricating Same App 20120211825 - Henson; Timothy D. ;   et al. | 2012-08-23 |
Method for fabricating a shallow and narrow trench FETand related structures App 20110284950 - Henson; Timothy D. ;   et al. | 2011-11-24 |
Power Semiconductor Device Including A Double Metal Contact App 20090212435 - Montgomery; Robert ;   et al. | 2009-08-27 |
Trench power MOSFET with reduced gate resistance Grant 7,368,353 - Cao , et al. May 6, 2 | 2008-05-06 |
Trench power MOSFET with reduced gate resistance App 20050112823 - Cao, Jianjun ;   et al. | 2005-05-26 |