Borland, John, O

USPTO Trademark & Patent Filings

Trademark applications and grants for Borland, John, O. Borland, John, O has 2 trademark applications. The latest application filed is for "ZERO CARBON SMART HOME"

Company Profile

Borland, John O
Borland, John, O
o john borland
Borland; John O. - South Hamilton MA
Borland; John O. - S. Hamilton MA
Borland, John O. - South Hamilton MA

State Incorporated	CALIFORNIA
Entity Type	CORPORATION
Address	405 Waterton Ct. Morgan, CALIFORNIA UNITED STATES 950375378

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Trademarks Patents

Patent Applications

Patent Application	Date
METHOD OF INTRODUCING MATERIAL INTO A SUBSTRATE BY GAS-CLUSTER ION BEAM IRRADIATION 20080245974 - 12/142453 Kirkpatrick; Allen R. ; et al.	2008-10-09
Replacement gate field effect transistor with germanium or SiGe channel and manufacturing method for same using gas-cluster ion irradiation 20060292762 - 11/472136 Borland; John O. ; et al.	2006-12-28
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation 20050277246 - 11/150698 Kirkpatrick, Allen R. ; et al.	2005-12-15
Formation of ultra-shallow junctions by gas-cluster ion irradiation 20050202657 - 11/080800 Borland, John O. ; et al.	2005-09-15
Methods of forming doped and un-doped strained semiconductor and semiconductor films by gas-cluster ion irradiation 20050181621 - 11/057653 Borland, John O. ; et al.	2005-08-18
Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation 7,410,890 - 11/150,698 Kirkpatrick , et al. August 12, 2	2008-08-12
Formation of ultra-shallow junctions by gas-cluster ion irradiation 7,396,745 - 11/080,800 Borland , et al. July 8, 2	2008-07-08
Methods of forming doped and un-doped strained semiconductor materials and semiconductor films by gas-cluster-ion-beam irradiation and materials and film products 7,259,036 - 11/057,653 Borland , et al. August 21, 2	2007-08-21
Simplified semiconductor device manufacturing using low energy high tilt angle and high energy post-gate ion implantation (PoGI) 6,187,643 - 09/342,958 Borland February 13, 2	2001-02-13
Semiconductor device having at least one field oxide area and CMOS vertically modulated wells (VMW) with a buried implanted layer for lateral isolation having a first portion below a well, a second portion forming another, adjacent well, and a vertical po 5,814,866 - 08/617,293 Borland September 29, 1	1998-09-29

Patent Grants & Applications

Trademark Applications

Mark Image Registration \| Serial	Trademark Application Date
"ZERO CARBON SMART HOME" 90759545	ZERO CARBON SMART HOME 2021-06-07
"NEM EQUIVALENT SAVINGS" 90759493	NEM EQUIVALENT SAVINGS 2021-06-07

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