Bomberger; Cory C.

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bomberger; Cory C..The latest application filed is for "source/drain diffusion barrier for germanium nmos transistors".

Company Profile

6.6.11

Bomberger; Cory C. - Portland OR

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Forming crystalline source/drain contacts on semiconductor devices Grant 11,430,787 - Jambunathan , et al. August 30, 2	2022-08-30
Diverse transistor channel materials enabled by thin, inverse-graded, germanium-based layer Grant 11,404,575 - Jambunathan , et al. August 2, 2	2022-08-02
Source/drain Diffusion Barrier For Germanium Nmos Transistors App 20220093797 - GLASS; Glenn A. ; et al.	2022-03-24
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors App 20220037530 - GLASS; Glenn A. ; et al.	2022-02-03
Source/drain diffusion barrier for germanium NMOS transistors Grant 11,222,977 - Glass , et al. January 11, 2	2022-01-11
Non-selective epitaxial source/drain deposition to reduce dopant diffusion for germanium nMOS transistors Grant 11,189,730 - Glass , et al. November 30, 2	2021-11-30
Doped insulator cap to reduce source/drain diffusion for germanium NMOS transistors Grant 11,101,356 - Glass , et al. August 24, 2	2021-08-24
Silicon substrate modification to enable formation of thin, relaxed, germanium-based layer Grant 11,056,592 - Jambunathan , et al. July 6, 2	2021-07-06
Silicon Substrate Modification To Enable Formation Of Thin, Relaxed, Germanium-based Layer App 20210083116 - JAMBUNATHAN; KARTHIK ; et al.	2021-03-18
Source/drain Diffusion Barrier For Germanium Nmos Transistors App 20210005748 - Glass; Glenn A. ; et al.	2021-01-07
Doped Insulator Cap To Reduce Source/drain Diffusion For Germanium Nmos Transistors App 20210005722 - Glass; Glenn A. ; et al.	2021-01-07
Diverse Transistor Channel Materials Enabled By Thin, Inverse-graded, Germanium-based Layer App 20200411691 - JAMBUNATHAN; KARTHIK ; et al.	2020-12-31
Doped Sti To Reduce Source/drain Diffusion For Germanium Nmos Transistors App 20200365711 - Glass; Glenn A. ; et al.	2020-11-19
Forming Crystalline Source/drain Contacts On Semiconductor Devices App 20200365585 - JAMBUNATHAN; Karthik ; et al.	2020-11-19
Non-selective Epitaxial Source/drain Deposition To Reduce Dopant Diffusion For Germanium Nmos Transistors App 20200258982 - A1	2020-08-13
Substrate Defect Blocking Layers For Strained Channel Semiconductor Devices App 20200219774 - Jambunathan; Karthik ; et al.	2020-07-09
Asymmetrical Semiconductor Nanowire Field-effect Transistor App 20190305085 - Sung; Seung Hoon ; et al.	2019-10-03

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