Bol; Igor

Patent Applications and Registrations

Patent applications and USPTO patent grants for Bol; Igor.The latest application filed is for "method for fabricating a shallow and narrow trench fet".

Company Profile

0.13.11

Bol; Igor - Topanga CA
Bol; Igor - Sherman Oaks CA US
Bol; Igor - US

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Method for Fabricating a Shallow and Narrow Trench FET App 20170213909 - Henson; Timothy D. ; et al.	2017-07-27
Method for fabricating a shallow and narrow trench FET and related structures Grant 9,653,597 - Henson , et al. May 16, 2	2017-05-16
Method for fabricating a vertical LDMOS device Grant 8,735,294 - Bol May 27, 2	2014-05-27
Method for Fabricating a Vertical LDMOS Device App 20130115746 - Bol; Igor	2013-05-09
Process for manufacture of thin wafer Grant 8,420,505 - Bol April 16, 2	2013-04-16
Vertical LDMOS device and method for fabricating same Grant 8,299,527 - Bol October 30, 2	2012-10-30
Vertical LDMOS device and method for fabricating same App 20110272759 - Bol; Igor	2011-11-10
Double sided semiconduction device with edge contact and package therefor Grant 7,944,035 - Bol May 17, 2	2011-05-17
Self-aligned vertical group III-V transistor and method for fabricated same App 20100314695 - Bol; Igor	2010-12-16
Dynamic deep depletion field effect transistor Grant 7,462,908 - Bol , et al. December 9, 2	2008-12-09
Process For Manufacture Of Thin Wafer App 20080014439 - Bol; Igor	2008-01-17
High density FET with self-aligned source atop the trench Grant 7,319,059 - Bol January 15, 2	2008-01-15
Double sided semiconduction device with edge contact and package therefor App 20070273016 - Bol; Igor	2007-11-29
High density fet with self-aligned source atop the trench App 20060172487 - Bol; Igor	2006-08-03
Dynamic deep depletion field effect transistor App 20060017100 - Bol; Igor ; et al.	2006-01-26
Method for fabrication of MOSFET with buried gate Grant 6,858,499 - Bol February 22, 2	2005-02-22
Method for fabrication of MOSFET with buried gate App 20040191971 - Bol, Igor	2004-09-30
Manufacturing process for fast recovery diode Grant 6,699,775 - Bol , et al. March 2, 2	2004-03-02
Single mask trench fred with enlarged Schottky area Grant 6,656,843 - Bol December 2, 2	2003-12-02
Single Mask Trench Fred With Enlarged Schottky Area App 20030203533 - Bol, Igor	2003-10-30
Manufacturing process and termination structure for fast recovery diode App 20030006425 - Bol, Igor ; et al.	2003-01-09
Single mask process for manufacture of fast recovery diode Grant 6,294,445 - Bol , et al. September 25, 2	2001-09-25

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