loadpatents
name:-0.0086550712585449
name:-0.026665925979614
name:-0.0018529891967773
Blosse; Alain Patent Filings

Blosse; Alain

Patent Applications and Registrations

Patent applications and USPTO patent grants for Blosse; Alain.The latest application filed is for "quality control process for umg-si feedstock".

Company Profile
1.22.8
  • Blosse; Alain - Belmont CA
  • Blosse; Alain - San Mateo CA
*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.
Patent Activity
PatentDate
Quality control process for UMG-SI feedstock
Grant 8,547,121 - Ounadjela , et al. October 1, 2
2013-10-01
Bifacial solar cells with back surface doping
Grant 8,404,970 - Kaes , et al. March 26, 2
2013-03-26
Bifacial solar cells with overlaid back grid surface
Grant 8,298,850 - Kaes , et al. October 30, 2
2012-10-30
Gate stack having nitride layer
Grant 8,080,453 - Blosse , et al. December 20, 2
2011-12-20
Quality Control Process For Umg-si Feedstock
App 20100327890 - Ounadjela; Kamel ;   et al.
2010-12-30
Process Control For UMG-Si Material Purification
App 20100310445 - Ounadjela; Kamel ;   et al.
2010-12-09
Bifacial solar cells with overlaid back grid surface
App 20100275983 - Kaes; Martin ;   et al.
2010-11-04
Bifacial solar cells with back surface doping
App 20100275984 - Kaes; Martin ;   et al.
2010-11-04
Bifacial solar cells with back surface reflector
App 20100275995 - Kaes; Martin ;   et al.
2010-11-04
Solar Cell And Fabrication Method Using Crystalline Silicon Based On Lower Grade Feedstock Materials
App 20090223549 - Ounadjela; Kamel ;   et al.
2009-09-10
Method for cleaning a gate stack
Grant 7,396,773 - Blosse , et al. July 8, 2
2008-07-08
Method of selective tungsten deposition on a silicon surface
Grant 7,323,411 - Blosse January 29, 2
2008-01-29
Nitride layer on a gate stack
Grant 7,256,083 - Blosse , et al. August 14, 2
2007-08-14
Selective oxidation of gate stack
Grant 7,189,652 - Blosse , et al. March 13, 2
2007-03-13
Poly/silicide stack and method of forming the same
Grant 7,151,048 - Blosse December 19, 2
2006-12-19
Integrated circuit with improved RC delay
Grant 7,018,942 - Ben-Tzur , et al. March 28, 2
2006-03-28
Contact structure and method of making the same
Grant 6,979,640 - Blosse , et al. December 27, 2
2005-12-27
Gate electrode for MOS transistors
Grant 6,902,993 - Blosse , et al. June 7, 2
2005-06-07
Self aligned metal interconnection and method of making the same
Grant 6,887,784 - Blosse May 3, 2
2005-05-03
Self-aligned contact structure with raised source and drain
Grant 6,869,850 - Blosse , et al. March 22, 2
2005-03-22
Integrated circuit with improved RC delay
Grant 6,841,878 - Ben-Tzur , et al. January 11, 2
2005-01-11
Nitride spacer formation
Grant 6,803,321 - Blosse , et al. October 12, 2
2004-10-12
Gate electrode for MOS transistors
App 20040188772 - Blosse, Alain ;   et al.
2004-09-30
Method of making metallization and contact structures in an integrated circuit using a timed trench etch
App 20040082182 - Blosse, Alain ;   et al.
2004-04-29
Controlled thickness gate stack
Grant 6,680,516 - Blosse , et al. January 20, 2
2004-01-20
Integrated circuit with improved RC delay
Grant 6,660,661 - Ben-Tzur , et al. December 9, 2
2003-12-09
Method of making metallization and contact structures in an integrated circuit
Grant 6,635,566 - Blosse , et al. October 21, 2
2003-10-21
Method of making metallization and contact structures in an integrated circuit comprising an etch stop layer
Grant 6,399,512 - Blosse , et al. June 4, 2
2002-06-04

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