| Patent | Date |
|---|
Double-sided chip stack assembly
Grant 11,211,373 - Bhalla , et al. December 28, 2 | 2021-12-28 |
Sawtooh Electric Field Drift Region Structure For Planar And Trench Power Semiconductor Devices
App 20210305406 - Bobde; Madhur ; et al. | 2021-09-30 |
Sawtooh electric field drift region structure for planar and trench power semiconductor devices
Grant 11,038,037 - Bobde , et al. June 15, 2 | 2021-06-15 |
MOS device with island region
Grant 10,978,585 - Bhalla , et al. April 13, 2 | 2021-04-13 |
Device structure and manufacturing method using HDP deposited source-body implant block
Grant 10,896,968 - Bhalla , et al. January 19, 2 | 2021-01-19 |
Reusable Wide Bandgap Semiconductor Substrate
App 20210005517 - Bhalla; Anup ; et al. | 2021-01-07 |
Reusable wide bandgap semiconductor substrate
Grant 10,825,733 - Bhalla , et al. November 3, 2 | 2020-11-03 |
Sawtooh Electric Field Drift Region Structure For Planar And Trench Power Semiconductor Devices
App 20200303513 - Bobde; Madhur ; et al. | 2020-09-24 |
Vertical trench DMOSFET having integrated implants forming enhancement diodes in parallel with the body diode
Grant 10,763,351 - Pan , et al. Sep | 2020-09-01 |
Nano-tube MOSFET technology and devices
Grant 10,686,035 - Yilmaz , et al. | 2020-06-16 |
Topside structures for an insulated gate bipolar transistor (IGBT) device to achieve improved device performances
Grant 10,686,062 - Bobde , et al. | 2020-06-16 |
MOSFET device and fabrication
Grant 10,680,097 - Chen , et al. | 2020-06-09 |
Reusable Wide Bandgap Semiconductor Substrate
App 20200135565 - Bhalla; Anup ; et al. | 2020-04-30 |
Mos Device With Island Region
App 20200119185 - Bhalla; Anup ; et al. | 2020-04-16 |
Nanotube semiconductor devices
Grant 10,593,759 - Yilmaz , et al. | 2020-03-17 |
Vertical gallium nitride Schottky diode
Grant 10,573,762 - Zhu , et al. Feb | 2020-02-25 |
Device and fabrication of MOS device with island region
Grant 10,535,764 - Bhalla , et al. Ja | 2020-01-14 |
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
Grant 10,522,666 - Bhalla , et al. Dec | 2019-12-31 |
Self-aligned slotted accumulation-mode field effect transistor (ACCUFET) structure and method
Grant 10,468,526 - Hebert , et al. No | 2019-11-05 |
Nanotube Semiconductor Devices
App 20190333994 - Yilmaz; Hamza ; et al. | 2019-10-31 |
Planar multi-implanted JFET
Grant 10,446,695 - Bhalla , et al. Oc | 2019-10-15 |
Normally off gallium nitride field effect transistors (FET)
Grant 10,439,058 - Bhalla , et al. O | 2019-10-08 |
Vertical Gallium Nitride Schottky Diode
App 20190296157 - Zhu; TingGang ; et al. | 2019-09-26 |
Termination structure for nanotube semiconductor devices
Grant 10,396,158 - Yilmaz , et al. A | 2019-08-27 |
Trench vertical JFET with improved threshold voltage control
Grant 10,396,215 - Bhalla , et al. A | 2019-08-27 |
Trench vertical JFET with ladder termination
Grant 10,367,099 - Li , et al. July 30, 2 | 2019-07-30 |
Vertical JFET made using a reduced masked set
Grant 10,367,098 - Li , et al. July 30, 2 | 2019-07-30 |
Termination structure for gallium nitride Schottky diode including junction barriar diodes
Grant 10,333,006 - Zhu , et al. | 2019-06-25 |
Nano-tube Mosfet Technology And Devices
App 20190115427 - Yilmaz; Hamza ; et al. | 2019-04-18 |
Sawtooh Electric Field Drift Region Structure For Planar And Trench Power Semiconductor Devices
App 20190088761 - Bobde; Madhur ; et al. | 2019-03-21 |
Nanotube Semiconductor Devices
App 20190043947 - Yilmaz; Hamza ; et al. | 2019-02-07 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
Grant 10,192,982 - Yilmaz , et al. Ja | 2019-01-29 |
Integrated Schottky diode in high voltage semiconductor device
Grant 10,177,221 - Guan , et al. J | 2019-01-08 |
Trench Vertical JFET With Ladder Termination
App 20180342626 - Li; Zhongda ; et al. | 2018-11-29 |
Device And Fabrication Of Mos Device With Island Region
App 20180337274 - Bhalla; Anup ; et al. | 2018-11-22 |
Termination Structure For Gallium Nitride Schottky Diode Including Junction Barriar Diodes
App 20180323315 - Zhu; TingGang ; et al. | 2018-11-08 |
Nano-tube MOSFET technology and devices
Grant 10,121,857 - Yilmaz , et al. November 6, 2 | 2018-11-06 |
Planar triple-implanted JFET
Grant 10,121,907 - Bhalla , et al. November 6, 2 | 2018-11-06 |
Normally Off Gallium Nitride Field Effect Transistors (fet)
App 20180308967 - Bhalla; Anup ; et al. | 2018-10-25 |
Lateral super junction device with high substrate-gate breakdown and built-in avalanche clamp diode
Grant 10,103,240 - Bobde , et al. October 16, 2 | 2018-10-16 |
MOS device with island region
Grant 10,074,742 - Bhalla , et al. September 11, 2 | 2018-09-11 |
Termination design for high voltage device
Grant 10,069,005 - Guan , et al. September 4, 2 | 2018-09-04 |
Nanotube termination structure for power semiconductor devices
Grant 10,062,755 - Yilmaz , et al. August 28, 2 | 2018-08-28 |
Nano-tube Mosfet Technology And Devices
App 20180240872 - Yilmaz; Hamza ; et al. | 2018-08-23 |
Vertical JFET made using a reduced mask set
Grant 10,056,500 - Li , et al. August 21, 2 | 2018-08-21 |
Trench vertical JFET with ladder termination
Grant 10,050,154 - Li , et al. August 14, 2 | 2018-08-14 |
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
Grant 10,050,134 - Bhalla , et al. August 14, 2 | 2018-08-14 |
Vertical JFET Made Using A Reduced Masked Set
App 20180226513 - Li; Zhongda ; et al. | 2018-08-09 |
Termination structure for gallium nitride Schottky diode
Grant 10,038,106 - Zhu , et al. July 31, 2 | 2018-07-31 |
Integrated Schottky Diode In High Voltage Semiconductor Device
App 20180212022 - Guan; Lingpeng ; et al. | 2018-07-26 |
Robust semiconductor power devices with design to protect transistor cells with slower switching speed
Grant 10,032,584 - Lui , et al. July 24, 2 | 2018-07-24 |
Methods For Fabricating Anode Shorted Field Stop Insulated Gate Bipolar Transistor
App 20180204937 - Bhalla; Anup ; et al. | 2018-07-19 |
Normally off gallium nitride field effect transistors (FET)
Grant 10,020,389 - Bhalla , et al. July 10, 2 | 2018-07-10 |
Uni-directional transient voltage suppressor (TVS)
Grant 9,978,740 - Guan , et al. May 22, 2 | 2018-05-22 |
Robust Semiconductor Power Devices With Design To Protect Transistor Cells With Slower Switching Speed
App 20180138906 - Lui; Sik K. ; et al. | 2018-05-17 |
Nanotube Termination Structure For Power Semiconductor Devices
App 20180130880 - Yilmaz; Hamza ; et al. | 2018-05-10 |
Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET
Grant 9,960,237 - Wang , et al. May 1, 2 | 2018-05-01 |
Self-aligned Slotted Accumulation-mode Field Effect Transistor (accufet) Structure And Method
App 20180102435 - Hebert; Francois ; et al. | 2018-04-12 |
Trenched and implanted bipolar junction transistor
Grant 9,917,180 - Bhalla , et al. March 13, 2 | 2018-03-13 |
Self aligned trench MOSFET with integrated diode
Grant 9,911,840 - Lui , et al. March 6, 2 | 2018-03-06 |
Nanotube semiconductor devices
Grant 9,899,474 - Yilmaz , et al. February 20, 2 | 2018-02-20 |
Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method
Grant 9,882,049 - Hebert , et al. January 30, 2 | 2018-01-30 |
Integrated Schottky diode in high voltage semiconductor device
Grant 9,876,073 - Guan , et al. January 23, 2 | 2018-01-23 |
High voltage switch module
Grant 9,866,213 - Zhang , et al. January 9, 2 | 2018-01-09 |
High voltage field balance metal oxide field effect transistor (FBM)
Grant 9,865,678 - Bhalla , et al. January 9, 2 | 2018-01-09 |
Mosfet Device And Fabrication
App 20170373186 - Chen; John ; et al. | 2017-12-28 |
Nano Mosfet With Trench Bottom Oxide Shielded And Third Dimensional P-body Contact
App 20170373185 - Yilmaz; Hamza ; et al. | 2017-12-28 |
Nanotube Semiconductor Devices
App 20170338307 - Yilmaz; Hamza ; et al. | 2017-11-23 |
Power MOSFET device structure for high frequency applications
Grant 9,806,175 - Bhalla , et al. October 31, 2 | 2017-10-31 |
Termination Structure For Gallium Nitride Schottky Diode
App 20170301800 - Zhu; TingGang ; et al. | 2017-10-19 |
MOSFET device and fabrication
Grant 9,793,393 - Chen , et al. October 17, 2 | 2017-10-17 |
Diode Structures With Controlled Injection Efficiency For Fast Switching
App 20170288066 - Bobde; Madhur ; et al. | 2017-10-05 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block
App 20170288034 - Bhalla; Anup ; et al. | 2017-10-05 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
Grant 9,748,375 - Yilmaz , et al. August 29, 2 | 2017-08-29 |
Trench junction barrier controlled Schottky
Grant 9,741,851 - Lui , et al. August 22, 2 | 2017-08-22 |
Termination structure for gallium nitride schottky diode
Grant 9,728,655 - Zhu , et al. August 8, 2 | 2017-08-08 |
Hybrid wide-bandgap semiconductor bipolar switches
Grant 9,721,944 - Fursin , et al. August 1, 2 | 2017-08-01 |
Integrated Schottky Diode In High Voltage Semiconductor Device
App 20170213887 - Guan; Lingpeng ; et al. | 2017-07-27 |
Self-aligned Shielded-gate Trench Mos-controlled Silicon Carbide Switch With Reduced Miller Capacitance And Method Of Manufacturing The Same
App 20170213908 - FURSIN; Leonid ; et al. | 2017-07-27 |
Planar Multi-implanted JFET
App 20170213917 - Bhalla; Anup ; et al. | 2017-07-27 |
Offset leadframe cascode package
Grant 9,716,057 - Zhang , et al. July 25, 2 | 2017-07-25 |
Device structure and manufacturing method using HDP deposited source-body implant block
Grant 9,716,156 - Bhalla , et al. July 25, 2 | 2017-07-25 |
Nanotube semiconductor devices
Grant 9,704,955 - Yilmaz , et al. July 11, 2 | 2017-07-11 |
Diode structures with controlled injection efficiency for fast switching
Grant 9,685,523 - Bobde , et al. June 20, 2 | 2017-06-20 |
Termination Design For High Voltage Device
App 20170148910 - Guan; Lingpeng ; et al. | 2017-05-25 |
Planar triple-implanted JFET
Grant 9,653,618 - Bhalla , et al. May 16, 2 | 2017-05-16 |
Trench Vertical JFET With Ladder Termination
App 20170133518 - Li; Zhongda ; et al. | 2017-05-11 |
Manufacturing methods for accurately aligned and self-balanced superjunction devices
Grant 9,647,059 - Guan , et al. May 9, 2 | 2017-05-09 |
Manufacturing Methods For Accurately Aligned And Self-balanced Superjunction Devices
App 20170125514 - Guan; Lingpeng ; et al. | 2017-05-04 |
Wide Bandgap Junction Barrier Schottky Diode With Silicon Bypass
App 20170125394 - Bhalla; Anup | 2017-05-04 |
Planar Triple-implanted JFET
App 20170117392 - Bhalla; Anup ; et al. | 2017-04-27 |
Planar Triple-implanted Jfet
App 20170117418 - Bhalla; Anup ; et al. | 2017-04-27 |
Lateral Super Junction Device With High Substrate-gate Breakdown And Built-in Avalanche Clamp Diode
App 20170117386 - Bobde; Madhur ; et al. | 2017-04-27 |
Integrated Schottky diode in high voltage semiconductor device
Grant 9,620,584 - Guan , et al. April 11, 2 | 2017-04-11 |
Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
Grant 9,620,498 - Su , et al. April 11, 2 | 2017-04-11 |
Nanotube Semiconductor Devices
App 20170084694 - Yilmaz; Hamza ; et al. | 2017-03-23 |
Topside Structures For An Insulated Gate Bipolar Transistor (igbt) Device To Achieve Improved Device Perforemances
App 20170069740 - Bobde; Madhur ; et al. | 2017-03-09 |
Termination Structure With Multiple Embedded Potential Spreading Capacitive Structures For Trench Mosfet
App 20170053989 - Wang; Xiaobin ; et al. | 2017-02-23 |
Termination design for high voltage device
Grant 9,577,072 - Guan , et al. February 21, 2 | 2017-02-21 |
Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
Grant 9,570,404 - Pang , et al. February 14, 2 | 2017-02-14 |
Vertical JFET Made Using A Reduced Mask Set
App 20170018627 - Li; Zhongda ; et al. | 2017-01-19 |
Vertical Jfet Made Using A Reduced Mask Set
App 20170018657 - Li; Zhongda ; et al. | 2017-01-19 |
Corner layout for high voltage semiconductor devices
Grant 9,543,413 - Guan , et al. January 10, 2 | 2017-01-10 |
Trenched And Implanted Bipolar Junction Transistor
App 20170005183 - BHALLA; Anup ; et al. | 2017-01-05 |
Normally Off Gallium Nitride Field Effect Transistors (fet)
App 20160380073 - Bhalla; Anup ; et al. | 2016-12-29 |
Trench Vertical JFET With Improved Threshold Voltage Control
App 20160380117 - Bhalla; Anup ; et al. | 2016-12-29 |
Termination Of High Voltage (hv) Devices With New Configurations And Methods
App 20160372542 - Lee; Yeeheng ; et al. | 2016-12-22 |
Termination structure for gallium nitride schottky diode
App 20160372610 - Zhu; TingGang ; et al. | 2016-12-22 |
Configuration and method to generate saddle junction electric field in edge termination
Grant 9,520,464 - Bobde , et al. December 13, 2 | 2016-12-13 |
Normally off gallium nitride field effect transistors (FET)
Grant 9,520,480 - Bhalla , et al. December 13, 2 | 2016-12-13 |
High Voltage Field Balance Metal Oxide Field Effect Transistor (fbm)
App 20160351659 - Bhalla; Anup ; et al. | 2016-12-01 |
Nanotube semiconductor devices
Grant 9,502,503 - Yilmaz , et al. November 22, 2 | 2016-11-22 |
Trench Vertical Jfet With Improved Threshold Voltage Control
App 20160336432 - Bhalla; Anup ; et al. | 2016-11-17 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block
App 20160322469 - Bhalla; Anup ; et al. | 2016-11-03 |
Nano-tube Mosfet Technology And Devices
App 20160322459 - Yilmaz; Hamza ; et al. | 2016-11-03 |
Flexible Crss Adjustment In A Sgt Mosfet To Smooth Waveforms And To Avoid Emi In Dc-dc Application
App 20160315053 - Pan; Ji ; et al. | 2016-10-27 |
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
Grant 9,478,646 - Bhalla , et al. October 25, 2 | 2016-10-25 |
Uni-directional Transient Voltage Suppressor (tvs)
App 20160300833 - Guan; Lingpeng ; et al. | 2016-10-13 |
Nanotube Semiconductor Devices
App 20160300909 - Yilmaz; Hamza ; et al. | 2016-10-13 |
Source and body contact structure for trench-DMOS devices using polysilicon
Grant 9,466,710 - Hebert , et al. October 11, 2 | 2016-10-11 |
Methods For Fabricating Anode Shorted Field Stop Insulated Gate Bipolar Transistor
App 20160284797 - Bhalla; Anup ; et al. | 2016-09-29 |
Configuration And Method To Generate Saddle Junction Electric Field In Edge Termination
App 20160284794 - Bobde; Madhur ; et al. | 2016-09-29 |
Planar srfet using no additional masks and layout method
Grant 9,455,249 - Bhalla September 27, 2 | 2016-09-27 |
Lateral super junctions with high substrate breakdown and build in avalanche clamp diode
Grant 9,450,050 - Bobde , et al. September 20, 2 | 2016-09-20 |
High voltage field balance metal oxide field effect transistor (FBM)
Grant 9,450,083 - Bhalla , et al. September 20, 2 | 2016-09-20 |
Trench Vertical Jfet With Improved Threshold Voltage Control
App 20160268446 - Bhalla; Anup ; et al. | 2016-09-15 |
Oxide terminated trench MOSFET with three or four masks
Grant 9,443,928 - Lui , et al. September 13, 2 | 2016-09-13 |
Power Mosfet Device Structure For High Frequency Applications
App 20160247899 - Bhalla; Anup ; et al. | 2016-08-25 |
Top exposed semiconductor chip package
Grant 9,412,684 - Xue , et al. August 9, 2 | 2016-08-09 |
Protection circuit including vertical gallium nitride schottky diode and PN junction diode
Grant 9,406,661 - Zhu , et al. August 2, 2 | 2016-08-02 |
Uni-directional transient voltage suppressor (TVS)
Grant 9,391,061 - Guan , et al. July 12, 2 | 2016-07-12 |
Robust Semiconductor Power Devices With Design To Protect Transistor Cells With Slower Switching Speed
App 20160191048 - Lui; Sik K. ; et al. | 2016-06-30 |
Fabrication Of Mosfet Device With Reduced Breakdown Voltage
App 20160190283 - Pan; Ji ; et al. | 2016-06-30 |
Nano Mosfet With Trench Bottom Oxide Shielded And Third Dimensional P-body Contact
App 20160190309 - Yilmaz; Hamza ; et al. | 2016-06-30 |
Diode Structures With Controlled Injection Efficiency For Fast Switching
App 20160181391 - Bobde; Madhur ; et al. | 2016-06-23 |
Vertical semiconductor MOSFET device with double substrate-side multiple electrode connections and encapsulation
Grant 9,355,953 - Feng , et al. May 31, 2 | 2016-05-31 |
Integrating Schottky diode into power MOSFET
Grant 9,356,132 - Su , et al. May 31, 2 | 2016-05-31 |
Nanotube semiconductor devices
Grant 9,349,796 - Yilmaz , et al. May 24, 2 | 2016-05-24 |
Hybrid wide-bandgap semiconductor bipolar switches
Grant 9,331,068 - Fursin , et al. May 3, 2 | 2016-05-03 |
Hybrid Wide-bandgap Semiconductor Bipolar Switches
App 20160118381 - Fursin; Leonid ; et al. | 2016-04-28 |
Corner Layout For High Voltage Semiconductor Devices
App 20160118459 - Guan; Lingpeng ; et al. | 2016-04-28 |
Trench-gated MIS devices
Grant 9,324,858 - Bhalla , et al. April 26, 2 | 2016-04-26 |
Silicon carbide MOSFET with integrated MOS diode
Grant 9,324,807 - Bhalla , et al. April 26, 2 | 2016-04-26 |
Method of making a low-Rdson vertical power MOSFET device
Grant 9,318,603 - Su , et al. April 19, 2 | 2016-04-19 |
MOSFET device with reduced breakdown voltage
Grant 9,312,336 - Pan , et al. April 12, 2 | 2016-04-12 |
Nanotube Semiconductor Devices
App 20160099315 - Yilmaz; Hamza ; et al. | 2016-04-07 |
Self-aligned Slotted Accumulation-mode Field Effect Transistor (accufet) Structure And Method
App 20160099351 - Hebert; Francois ; et al. | 2016-04-07 |
Oxide Terminated Trench Mosfet With Three Or Four Masks
App 20160099308 - Lui; Sik ; et al. | 2016-04-07 |
Mos Device With Island Region
App 20160087093 - Bhalla; Anup ; et al. | 2016-03-24 |
Source And Body Contact Structure For Trench-dmos Devices Using Polysilicon
App 20160079414 - Hebert; Francois ; et al. | 2016-03-17 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
Grant 9,281,394 - Yilmaz , et al. March 8, 2 | 2016-03-08 |
Planar Srfet Using No Additional Masks And Layout Method
App 20160049392 - Bhalla; Anup | 2016-02-18 |
Integrated Schottky Diode In High Voltage Semiconductor Device
App 20160043169 - Guan; Lingpeng ; et al. | 2016-02-11 |
Multi-die semiconductor package
Grant 9,257,375 - Bhalla , et al. February 9, 2 | 2016-02-09 |
Configuration Of Gate To Drain (gd) Clamp And Esd Protection Circuit For Power Device Breakdown Protection
App 20160027771 - Su; Yi ; et al. | 2016-01-28 |
Nanotube semiconductor devices
Grant 9,245,949 - Yilmaz , et al. January 26, 2 | 2016-01-26 |
Termination Of High Voltage (hv) Devices With New Configurations And Methods
App 20160013267 - Lee; Yeeheng ; et al. | 2016-01-14 |
Fabrication of MOS device with schottky barrier controlling layer
Grant 9,236,450 - Bhalla , et al. January 12, 2 | 2016-01-12 |
Integrating Schottky Diode Into Power Mosfet
App 20160005853 - Su; Yi ; et al. | 2016-01-07 |
Configuration And Method To Generate Saddle Junction Electric Field In Edge Termination
App 20160005809 - Bobde; Madhur ; et al. | 2016-01-07 |
Configuration and method to generate saddle junction electric field in edge termination
Grant 9,231,050 - Bobde , et al. January 5, 2 | 2016-01-05 |
Corner layout for high voltage semiconductor devices
Grant 9,224,852 - Guan , et al. December 29, 2 | 2015-12-29 |
High Voltage Field Balance Metal Oxide Field Effect Transistor (fbm)
App 20150372129 - Bhalla; Anup ; et al. | 2015-12-24 |
Oxide terminated trench MOSFET with three or four masks
Grant 9,219,003 - Lui , et al. December 22, 2 | 2015-12-22 |
Source and body contact structure for trench-DMOS devices using polysilicon
Grant 9,214,544 - Hebert , et al. December 15, 2 | 2015-12-15 |
Manufacturing Methods For Accurately Aligned And Self-balanced Superjunction Devices
App 20150357406 - Guan; Lingpeng ; et al. | 2015-12-10 |
Edge termination configurations for high voltage semiconductor power devices
Grant 9,171,917 - Bobde , et al. October 27, 2 | 2015-10-27 |
Stacked dual chip package having leveling projections
Grant 9,165,866 - Yilmaz , et al. October 20, 2 | 2015-10-20 |
Termination Design For High Voltage Device
App 20150279984 - Guan; Lingpeng ; et al. | 2015-10-01 |
Monolithically integrated cascode switches
Grant 9,148,139 - Bhalla , et al. September 29, 2 | 2015-09-29 |
Shielded gate trench MOSFET package
Grant 9,136,370 - Lui , et al. September 15, 2 | 2015-09-15 |
High voltage field balance metal oxide field effect transistor (FBM)
Grant 9,129,822 - Bhalla , et al. September 8, 2 | 2015-09-08 |
Protection Circuit Including Vertical Gallium Nitride Schottky Diode And Schottky Diode
App 20150228729 - Zhu; TingGang ; et al. | 2015-08-13 |
Termination Structure With Multiple Embedded Potential Spreading Capacitive Structures For Trench Mosfet
App 20150214312 - Wang; Xiaobin ; et al. | 2015-07-30 |
Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
Grant 9,093,521 - Bhalla , et al. July 28, 2 | 2015-07-28 |
Monolithic IGBT and diode structure for quai-resonant converters
Grant 9,093,286 - Bhalla July 28, 2 | 2015-07-28 |
Edge Termination Configurations For High Voltage Semiconductor Power Devices
App 20150206943 - Bobde; Madhur ; et al. | 2015-07-23 |
Trench shield connected JFET
Grant 9,087,911 - Alexandrov , et al. July 21, 2 | 2015-07-21 |
Monolithically Integrated Cascode Switches
App 20150200662 - Bhalla; Anup ; et al. | 2015-07-16 |
Cascode switching circuit
Grant 9,083,343 - Li , et al. July 14, 2 | 2015-07-14 |
Normally off gallium nitride field effect transistors (FET)
Grant 9,064,945 - Bhalla , et al. June 23, 2 | 2015-06-23 |
Termination design for high voltage device
Grant 9,064,897 - Guan , et al. June 23, 2 | 2015-06-23 |
Self Aligned Trench Mosfet With Integrated Diode
App 20150171201 - Lui; Sik ; et al. | 2015-06-18 |
Junction barrier schottky (JBS) with floating islands
Grant 9,059,147 - Pan , et al. June 16, 2 | 2015-06-16 |
Nanotube Semiconductor Devices
App 20150155354 - Yilmaz; Hamza ; et al. | 2015-06-04 |
Oxide Terminated Trench Mosfet With Three Or Four Masks
App 20150137225 - Lui; Sik ; et al. | 2015-05-21 |
Termination structure with multiple embedded potential spreading capacitive for trench MOSFET and method
Grant 9,029,236 - Wang , et al. May 12, 2 | 2015-05-12 |
Nano-tube MOSFET technology and devices
Grant 9,024,375 - Yilmaz , et al. May 5, 2 | 2015-05-05 |
Device structure and manufacturing method using HDP deposited source-body implant block
Grant 9,024,378 - Bhalla , et al. May 5, 2 | 2015-05-05 |
Lateral Super Junctions With High Substrate Breakdown And Build In Avalanche Clamp Diode
App 20150115333 - Bobde; Madhur ; et al. | 2015-04-30 |
Buried Field Ring Field Effect Transistor (buf-fet) Integrated With Cells Implanted With Hole Supply Path
App 20150118810 - Bobde; Madhur ; et al. | 2015-04-30 |
Hybrid Wide-bandgap Semiconductor Bipolar Switches
App 20150115289 - Fursin; Leonid ; et al. | 2015-04-30 |
Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching
Grant 9,006,053 - Pan , et al. April 14, 2 | 2015-04-14 |
Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage
Grant 9,000,481 - Guan , et al. April 7, 2 | 2015-04-07 |
Vertical gallium nitride Schottky diode
Grant 8,994,140 - Zhu , et al. March 31, 2 | 2015-03-31 |
Self aligned trench MOSFET with integrated diode
Grant 8,980,716 - Lui , et al. March 17, 2 | 2015-03-17 |
Corner layout for superjunction device
Grant 8,975,720 - Guan , et al. March 10, 2 | 2015-03-10 |
Method of forming a self-aligned charge balanced power DMOS
Grant 8,969,953 - Chen , et al. March 3, 2 | 2015-03-03 |
Shielded gate trench (SGT) mosfet devices and manufacturing processes
Grant 8,963,240 - Bhalla , et al. February 24, 2 | 2015-02-24 |
Power MOSFET device structure for high frequency applications
Grant 8,963,233 - Bhalla , et al. February 24, 2 | 2015-02-24 |
Oxide terminated trench MOSFET with three or four masks
Grant 8,956,940 - Lui , et al. February 17, 2 | 2015-02-17 |
Vertical Semiconductor MOSFET Device with Double Substrate-Side Multiple Electrode Connections and Encapsulation
App 20150035049 - Feng; Tao ; et al. | 2015-02-05 |
Monolithic Igbt And Diode Structure For Quasi-resonant Converters
App 20150035005 - Bhalla; Anup | 2015-02-05 |
Robust semiconductor power devices with design to protect transistor cells with slower switching speed
Grant 8,946,942 - Lui , et al. February 3, 2 | 2015-02-03 |
Diode structures with controlled injection efficiency for fast switching
Grant 8,933,506 - Bobde , et al. January 13, 2 | 2015-01-13 |
Structure of mixed semiconductor encapsulation structure with multiple chips and capacitors
Grant 8,933,550 - Xue , et al. January 13, 2 | 2015-01-13 |
Dual-leadframe multi-chip package
Grant 8,933,549 - Liu , et al. January 13, 2 | 2015-01-13 |
MOS device with low injection diode
Grant 8,928,079 - Bhalla , et al. January 6, 2 | 2015-01-06 |
Method for forming termination structure for gallium nitride Schottky diode
Grant 8,927,402 - Zhu , et al. January 6, 2 | 2015-01-06 |
Nanotube semiconductor devices
Grant 8,928,031 - Yilmaz , et al. January 6, 2 | 2015-01-06 |
Enhancing Schottky Breakdown Voltage (bv) Without Affecting An Integrated Mosfet-schottky Device Layout
App 20140374823 - Bhalla; Anup ; et al. | 2014-12-25 |
Trench Shield Connected Jfet
App 20140361349 - Alexandrov; Peter ; et al. | 2014-12-11 |
Low Capacitance Transient Voltage Suppressor (tvs) With Reduced Clamping Voltage
App 20140363946 - Guan; Lingpeng ; et al. | 2014-12-11 |
Fabrication Of Mos Device With Schottky Barrier Controlling Layer
App 20140357030 - Bhalla; Anup ; et al. | 2014-12-04 |
Staggered column superjunction
Grant 8,900,949 - Guan , et al. December 2, 2 | 2014-12-02 |
Cascode scheme for improved device switching behavior
Grant 8,896,131 - Bhalla , et al. November 25, 2 | 2014-11-25 |
Trench Junction Barrier Controlled Schottky
App 20140332882 - Lui; SiK K. ; et al. | 2014-11-13 |
Topside Structures For An Insulated Gate Bipolar Transistor (igbt) Device To Achieve Improved Device Perforemances
App 20140332845 - Bobde; Madhur ; et al. | 2014-11-13 |
Etch depth determination structure
Grant 8,884,406 - Lou , et al. November 11, 2 | 2014-11-11 |
Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method
Grant 8,878,292 - Hebert , et al. November 4, 2 | 2014-11-04 |
Nano Mosfet With Trench Bottom Oxide Shielded And Third Dimensional P-body Contact
App 20140319605 - Yilmaz; Hamza ; et al. | 2014-10-30 |
Shielded Gate Trench (sgt) Mosfet Devices And Manufacturing Processes
App 20140319606 - Bhalla; Anup ; et al. | 2014-10-30 |
High Voltage Field Balance Metal Oxide Field Effect Transistor (fbm)
App 20140319604 - Bhalla; Anup ; et al. | 2014-10-30 |
Semiconductor device with substrate-side exposed device-side electrode and method of fabrication
Grant 8,866,267 - Feng , et al. October 21, 2 | 2014-10-21 |
Vjfet devices
Grant 8,860,098 - Bhalla , et al. October 14, 2 | 2014-10-14 |
Nanotube Semiconductor Devices
App 20140299914 - Yilmaz; Hamza ; et al. | 2014-10-09 |
Direct contact in trench with three-mask shield gate process
Grant 8,847,306 - Tai , et al. September 30, 2 | 2014-09-30 |
Method For Forming Termination Structure For Gallium Nitride Schottky Diode
App 20140273417 - Zhu; TingGang ; et al. | 2014-09-18 |
Vjfet Devices
App 20140264477 - Bhalla; Anup ; et al. | 2014-09-18 |
Shielded Gate Trench Mosfet Package
App 20140264571 - Lui; Sik ; et al. | 2014-09-18 |
Planar SRFET using no additional masks and layout method
Grant 8,836,015 - Bhalla September 16, 2 | 2014-09-16 |
TVS with low capacitance and forward voltage drop with depleted SCR as steering diode
Grant 8,835,977 - Bobde , et al. September 16, 2 | 2014-09-16 |
Vertical Gallium Nitride Schottky Diode
App 20140252372 - Zhu; TingGang ; et al. | 2014-09-11 |
Approach to integrate Schottky in MOSFET
Grant 8,828,857 - Lui , et al. September 9, 2 | 2014-09-09 |
Configuration and method to generate saddle junction electric field in edge termination
Grant 8,829,640 - Bobde , et al. September 9, 2 | 2014-09-09 |
Integrated Schottky diode in high voltage semiconductor device
Grant 8,829,614 - Guan , et al. September 9, 2 | 2014-09-09 |
Shielded gate trench MOSFET package
Grant 8,829,603 - Lui , et al. September 9, 2 | 2014-09-09 |
Low capacitance transient voltage suppressor (TVS) with reduced clamping voltage
Grant 8,822,300 - Guan , et al. September 2, 2 | 2014-09-02 |
Uni-directional Transient Voltage Suppressor (tvs)
App 20140231963 - Guan; Lingpeng ; et al. | 2014-08-21 |
Method of Making MOSFET Integrated with Schottky Diode with Simplified One-time Top-Contact Trench Etching
App 20140235024 - Pan; Ji ; et al. | 2014-08-21 |
Fabrication of MOS device with schottky barrier controlling layer
Grant 8,809,143 - Bhalla , et al. August 19, 2 | 2014-08-19 |
Source And Body Contact Structure For Trench-dmos Devices Using Polysilicon
App 20140225188 - Hebert; Francois ; et al. | 2014-08-14 |
Lateral Super Junction Device With High Substrate-gate Breakdown And Built-in Avalanche Clamp Diode
App 20140227837 - Bobde; Madhur ; et al. | 2014-08-14 |
Method Of Making A Low-rdson Vertical Power Mosfet Device
App 20140225185 - Su; Yi ; et al. | 2014-08-14 |
Device Structure And Manufacturing Method Using Hdp Deposited Source-body Implant Block
App 20140225187 - Bhalla; Anup ; et al. | 2014-08-14 |
MOSFET with improved performance through induced net charge region in thick bottom insulator
Grant 8,802,530 - Wang , et al. August 12, 2 | 2014-08-12 |
Termination of high voltage (HV) devices with new configurations and methods
Grant 8,803,251 - Lee , et al. August 12, 2 | 2014-08-12 |
Configuration of gate to drain (GD) clamp and ESD protection circuit for power device breakdown protection
Grant 8,802,509 - Su , et al. August 12, 2 | 2014-08-12 |
Integrating schottky diode into power MOSFET
Grant 8,785,270 - Su , et al. July 22, 2 | 2014-07-22 |
Manufacturing methods for accurately aligned and self-balanced superjunction devices
Grant 8,785,306 - Guan , et al. July 22, 2 | 2014-07-22 |
Nano MOSFET with trench bottom oxide shielded and third dimensional P-body contact
Grant 8,785,278 - Yilmaz , et al. July 22, 2 | 2014-07-22 |
High voltage field balance metal oxide field effect transistor (FBM)
Grant 8,785,279 - Bhalla , et al. July 22, 2 | 2014-07-22 |
Termination Design For High Voltage Device
App 20140193958 - Guan; Lingpeng ; et al. | 2014-07-10 |
Termination structure for gallium nitride schottky diode
Grant 8,772,901 - Zhu , et al. July 8, 2 | 2014-07-08 |
Vertical gallium nitride Schottky diode
Grant 8,772,144 - Zhu , et al. July 8, 2 | 2014-07-08 |
Method Of Making Mosfet Integrated With Schottky Diode With Simplified One-time Top-contact Trench Etching
App 20140179074 - Pan; Ji ; et al. | 2014-06-26 |
Normally Off Gallium Nitride Field Effect Transistors (fet)
App 20140175451 - Bhalla; Anup ; et al. | 2014-06-26 |
Two-dimensional shielded gate transistor device and method of manufacture
Grant 8,759,908 - Lui , et al. June 24, 2 | 2014-06-24 |
Tvs With Low Capacitance & Forward Voltage Drop With Depleted Scr As Steering Diode
App 20140167101 - Bobde; Madhur ; et al. | 2014-06-19 |
Termination Structure with Multiple Embedded Potential Spreading Capacitive Structures for Trench MOSFET and Method
App 20140167212 - Wang; Xiaobin ; et al. | 2014-06-19 |
Method of making MOSFET integrated with schottky diode with simplified one-time top-contact trench etching
Grant 8,748,268 - Pan , et al. June 10, 2 | 2014-06-10 |
Approach To Integrate Schottky In Mosfet
App 20140151790 - Lui; Sik ; et al. | 2014-06-05 |
Oxide Terminated Trench Mosfet With Three Or Four Masks
App 20140138767 - Lui; Sik ; et al. | 2014-05-22 |
Fabrication of MOS device with integrated Schottky diode in active region contact trench
Grant 8,728,890 - Bhalla , et al. May 20, 2 | 2014-05-20 |
Nanotube semiconductor devices
Grant 8,729,601 - Yilmaz , et al. May 20, 2 | 2014-05-20 |
Low Capacitance Transient Voltage Suppressor (tvs) With Reduced Clamping Voltage
App 20140134825 - Guan; Lingpeng ; et al. | 2014-05-15 |
Semiconductor encapsulation method
Grant 8,722,468 - Xue , et al. May 13, 2 | 2014-05-13 |
Dual-leadframe Multi-chip Package
App 20140103512 - Liu; Kai ; et al. | 2014-04-17 |
Mosfet Device And Fabrication
App 20140091386 - Chen; John ; et al. | 2014-04-03 |
Mosfet Device With Reduced Breakdown Voltage
App 20140054687 - Pan; Ji ; et al. | 2014-02-27 |
Stacked Dual Chip Package Having Leveling Projections
App 20140054758 - Yilmaz; Hamza ; et al. | 2014-02-27 |
Self Aligned Trench Mosfet With Integrated Diode
App 20140048846 - Lui; Sik ; et al. | 2014-02-20 |
Nanotube Semiconductor Devices
App 20140042490 - Yilmaz; Hamza ; et al. | 2014-02-13 |
Top Exposed Semiconductor Chip Package
App 20140035116 - Xue; Yan Xun ; et al. | 2014-02-06 |
High Voltage Field Balance Metal Oxide Field Effect Transistor (fbm)
App 20140027841 - Bhalla; Anup ; et al. | 2014-01-30 |
Corner Layout For High Voltage Semiconductor Devices
App 20140027819 - Guan; Lingpeng ; et al. | 2014-01-30 |
Termination Design For High Voltage Device
App 20140027840 - Guan; Lingpeng ; et al. | 2014-01-30 |
Method Of Forming A Self-aligned Charge Balanced Power Dmos
App 20130341689 - Chen; John ; et al. | 2013-12-26 |
Integrated Snubber In A Single Poly Mosfet
App 20130334599 - Pan; Ji ; et al. | 2013-12-19 |
Mosfet With Improved Performance Through Induced Net Charge Region In Thick Bottom Insulator
App 20130328121 - Wang; Xiaobin ; et al. | 2013-12-12 |
Semiconductor Encapsulation Method
App 20130309816 - Xue; Yan Xun ; et al. | 2013-11-21 |
Integrating Schottky Diode Into Power Mosfet
App 20130309823 - Su; Yi ; et al. | 2013-11-21 |
Corner Layout For Superjunction Device
App 20130277740 - Guan; Lingpeng ; et al. | 2013-10-24 |
Fabrication Of Mos Device With Integrated Schottky Diode In Active Region Contact Trench
App 20130280870 - Bhalla; Anup ; et al. | 2013-10-24 |
Staggered Column Superjunction
App 20130260522 - Guan; Lingpeng ; et al. | 2013-10-03 |
Nano-tube Mosfet Technology And Devices
App 20130221430 - Yilmaz; Hamza ; et al. | 2013-08-29 |
Method For Making Gate-oxide With Step-graded Thickness In Trenched Dmos Device For Reduced Gate-to-drain Capacitance
App 20130224919 - Ding; Yongping ; et al. | 2013-08-29 |
Fabrication Of Mosfet Device With Reduced Breakdown Voltage
App 20130203224 - Pan; Ji ; et al. | 2013-08-08 |
Fabrication Of Mos Device With Schottky Barrier Controlling Layer
App 20130203225 - Bhalla; Anup ; et al. | 2013-08-08 |
Nano Mosfet With Trench Bottom Oxide Shielded And Third Dimensional P-body Contact
App 20130200451 - Yilmaz; Hamza ; et al. | 2013-08-08 |
Oxide Terminated Trench Mosfet With Three Or Four Masks
App 20130126966 - Lui; Sik ; et al. | 2013-05-23 |
Termination Structure for Gallium Nitride Schottky Diode
App 20130119394 - Zhu; TingGang ; et al. | 2013-05-16 |
Vertical Gallium Nitride Schottky Diode
App 20130119393 - Zhu; TingGang ; et al. | 2013-05-16 |
Two-dimensional Shielded Gate Transistor Device And Method Of Manufacture
App 20130105886 - LUI; SIK ; et al. | 2013-05-02 |
Power Mosfet Device Structure For High Frequency Applications
App 20130093001 - Bhalla; Anup ; et al. | 2013-04-18 |
Manufacturing methods for accurately aligned and self-balanced superjunction devices
App 20130075855 - Guan; Lingpeng ; et al. | 2013-03-28 |
Multi-die Package
App 20130069163 - Bhalla; Anup ; et al. | 2013-03-21 |
Power Mos Device Fabrication
App 20120329225A1 - | 2012-12-27 |
MOSFET with a second poly and an inter-poly dielectric layer over gate for synchronous rectification
App 20100330767A1 - | 2010-12-30 |
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