| Patent | Date |
|---|
Power Devices Having Tunable Saturation Current Clamps Therein That Support Improved Short-circuit Capability And Methods Of Operating Same
App 20220085171 - Baliga; Bantval Jayant | 2022-03-17 |
Power MOSFET and JBSFET cell topologies with superior high frequency figure of merit
Grant 11,276,779 - Baliga March 15, 2 | 2022-03-15 |
Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes
Grant 10,804,393 - Baliga October 13, 2 | 2020-10-13 |
Power MOSFETs with superior high frequency figure-of-merit
Grant 10,355,132 - Baliga July 16, 2 | 2019-07-16 |
Power MOSFETs with Superior High Frequency Figure-of-Merit and Methods of Forming Same
App 20180269322 - Baliga; Bantval Jayant | 2018-09-20 |
Solid State Fault Isolation Devices And Methods
App 20140055901 - Sung; Woongje ; et al. | 2014-02-27 |
Methods of forming power semiconductor devices having laterally extending base shielding regions
Grant 7,041,559 - Baliga May 9, 2 | 2006-05-09 |
Methods of forming power semiconductor devices having laterally extending base shielding regions
App 20050032291 - Baliga, Bantval Jayant | 2005-02-10 |
Power semiconductor devices having linear transfer characteristics when regions therein are in velocity saturation modes and methods of forming and operating same
App 20050001268 - Baliga, Bantval Jayant | 2005-01-06 |
Methods of forming vertical power devices having trench-based source electrodes with sidewall source contacts
App 20040232479 - Baliga, Bantval Jayant | 2004-11-25 |
Integrated circuit power devices having junction barrier controlled schottky diodes therein
Grant 6,800,897 - Baliga October 5, 2 | 2004-10-05 |
Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through
Grant 6,791,143 - Baliga September 14, 2 | 2004-09-14 |
Vertical power devices having retrograded-doped transition regions therein
Grant 6,784,486 - Baliga August 31, 2 | 2004-08-31 |
Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein
Grant 6,781,194 - Baliga August 24, 2 | 2004-08-24 |
Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes
Grant 6,764,889 - Baliga July 20, 2 | 2004-07-20 |
Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-through and schottky rectifying flyback diodes
App 20040099905 - Baliga, Bantval Jayant | 2004-05-27 |
Methods of forming vertical power devices having deep and shallow trenches therein
App 20040048488 - Baliga, Bantval Jayant | 2004-03-11 |
Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodes
App 20040016963 - Baliga, Bantval Jayant | 2004-01-29 |
Radio frequency (RF) power devices having faraday shield layers therein
Grant 6,653,691 - Baliga November 25, 2 | 2003-11-25 |
Vertical power devices having trench-based electrodes therein
Grant 6,649,975 - Baliga November 18, 2 | 2003-11-18 |
Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes
Grant 6,621,121 - Baliga September 16, 2 | 2003-09-16 |
Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip lines
Grant 6,586,833 - Baliga July 1, 2 | 2003-07-01 |
MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same
Grant 6,545,316 - Baliga April 8, 2 | 2003-04-08 |
Vertical power devices having insulated source electrodes in discontinuous deep trenches
Grant 6,525,372 - Baliga February 25, 2 | 2003-02-25 |
Power semiconductor devices having linear transfer characteristics and methods of forming and operating same
App 20020185679 - Baliga, Bantval Jayant | 2002-12-12 |
Power semiconductor devices having laterally extending base shielding regions that inhibit base reach through and methods of forming same
App 20020177277 - Baliga, Bantval Jayant | 2002-11-28 |
Power semiconductor devices having retrograded-doped transition regions that enhance breakdown voltage characteristics and methods of forming same
App 20020175351 - Baliga, Bantval Jayant | 2002-11-28 |
Packaged power devices for radio frequency (RF) applications
App 20020056872 - Baliga, Bantval Jayant | 2002-05-16 |
Vertical power devices having deep and shallow trenches and methods of forming same
App 20020056884 - Baliga, Bantval Jayant | 2002-05-16 |
Vertical power devices having insulated source electrodes in discontinuous deep trenches
App 20020057610 - Baliga, Bantval Jayant | 2002-05-16 |
Radio frequency (RF) power devices having faraday shield layers therein
App 20020056883 - Baliga, Bantval Jayant | 2002-05-16 |
Power semiconductor devices having trench-based gate electrodes and field plates
Grant 6,388,286 - Baliga May 14, 2 | 2002-05-14 |
Methods of forming power semiconductor devices having tapered trench-based insulating regions therein
Grant 6,365,462 - Baliga April 2, 2 | 2002-04-02 |
Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes and methods of forming same
App 20020036319 - Baliga, Bantval Jayant | 2002-03-28 |
Silicon carbide power devices having trench-based silicon carbide charge coupling regions therein
Grant 6,313,482 - Baliga November 6, 2 | 2001-11-06 |
Methods of forming power semiconductor devices having T-shaped gate electrodes
Grant 6,303,410 - Baliga October 16, 2 | 2001-10-16 |
Methods of forming power semiconductor devices having tapered trench-based insulating regions therein
App 20010000033 - Baliga, Bantval Jayant | 2001-03-15 |
Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
Grant 6,191,447 - Baliga February 20, 2 | 2001-02-20 |
Power semiconductor devices that utilize buried insulating regions to achieve higher than parallel-plane breakdown voltages
Grant 6,075,259 - Baliga June 13, 2 | 2000-06-13 |
Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability
Grant 6,023,078 - Baliga February 8, 2 | 2000-02-08 |
Power semiconductor devices having improved high frequency switching and breakdown characteristics
Grant 5,998,833 - Baliga December 7, 1 | 1999-12-07 |
Semiconductor switching devices having buried gate electrodes and methods of forming same
Grant 5,912,497 - Baliga June 15, 1 | 1999-06-15 |
Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance
Grant 5,742,076 - Sridevan , et al. April 21, 1 | 1998-04-21 |
Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein
Grant 5,681,762 - Baliga October 28, 1 | 1997-10-28 |
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