Azuma; Atsushi

Patent Applications and Registrations

Patent applications and USPTO patent grants for Azuma; Atsushi.The latest application filed is for "semiconductor layout generation".

Company Profile

0.13.15

Azuma; Atsushi - Cortlandt Manor NY
Azuma; Atsushi - Osaka N/A JP
Azuma; Atsushi - Kanagawa-ken JP
Azuma; Atsushi - Yokohama JP
Azuma; Atsushi - Yokohama-city JP
Azuma; Atsushi - Yokohama-shi JP
Azuma; Atsushi - Wappingers Falls NY
Azuma, Atsushi - Tokorazawa-shi JP
Azuma; Atsushi - Hyogo-ku JP

*profile and listings may contain filings by different individuals or companies with the same name. Review application materials to confirm ownership/assignment.

Patent Activity

Patent	Date
Semiconductor Layout Generation App 20170351799 - Azuma; Atsushi ; et al.	2017-12-07
Semiconductor layout generation Grant 9,836,570 - Azuma , et al. December 5, 2	2017-12-05
Low-molecular polysulfated hyaluronic acid derivative and medicine containing same Grant 8,993,536 - Kakehi , et al. March 31, 2	2015-03-31
Low-molecular Polysulfated Hyaluronic Acid Derivative And Medicine Containing Same App 20110281819 - Kakehi; Kazuaki ; et al.	2011-11-17
Semiconductor device Grant 7,880,237 - Azuma February 1, 2	2011-02-01
Semiconductor Device App 20090140344 - Azuma; Atsushi	2009-06-04
Semiconductor device comprising buried channel region and method for manufacturing the same Grant 7,288,470 - Matsuda , et al. October 30, 2	2007-10-30
Control of body potential of partially-depleted field-effect transistors App 20070246750 - Azuma; Atsushi	2007-10-25
Semiconductor device comprising buried channel region and method for manufacturing the same App 20070184623 - Matsuda; Satoshi ; et al.	2007-08-09
Semiconductor device with SOI region and bulk region and method of manufacture thereof Grant 6,979,866 - Azuma , et al. December 27, 2	2005-12-27
Semiconductor device having gate electrode of staked structure including polysilicon layer and metal layer and method of manufacturing the same App 20050189600 - Ohuchi, Kazuya ; et al.	2005-09-01
Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the same Grant 6,933,590 - Yamada , et al. August 23, 2	2005-08-23
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same Grant 6,897,534 - Ohuchi , et al. May 24, 2	2005-05-24
Dna arrays for measuring sensitivity to anticancer agent App 20040265813 - Takechi, Teiji ; et al.	2004-12-30
Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the same App 20040113228 - Yamada, Takashi ; et al.	2004-06-17
Semiconductor device with SOI region and bulk region and method of manufacture thereof App 20040108552 - Azuma, Atsushi ; et al.	2004-06-10
Semiconductor device comprising buried channel region and method for manufacturing the same App 20040084731 - Matsuda, Satoshi ; et al.	2004-05-06
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same App 20040041213 - Ohuchi, Kazuya ; et al.	2004-03-04
Semiconductor device and method of manufacturing the same including T-shaped gate Grant 6,649,462 - Azuma , et al. November 18, 2	2003-11-18
Semiconductor device comprising buried channel region Grant 6,642,581 - Matsuda , et al. November 4, 2	2003-11-04
Semiconductor device having gate electrode of stacked structure including polysilicon layer and metal layer and method of manufacturing the same Grant 6,642,585 - Ohuchi , et al. November 4, 2	2003-11-04
Semiconductor device and method of manufacturing the same App 20030073273 - Azuma, Atsushi ; et al.	2003-04-17
Semiconductor device and method of manufacturing the same including thicker insulating layer on lower part of electrode Grant 6,515,320 - Azuma , et al. February 4, 2	2003-02-04
Semiconductor Device And Method Of Manufacturing The Same App 20030022448 - Azuma, Atsushi ; et al.	2003-01-30
Semiconductor device comprising buried channel region and method for manufacturing the same App 20020142529 - Matsuda, Satoshi ; et al.	2002-10-03
Semiconductor Device Having Gate Electrode Of Stacked Structure Including Polysilicon Layer And Metal Layer And Method Of Manufacturing The Same App 20020030234 - OHUCHI, KAZUYA ; et al.	2002-03-14
Power transmission belt Grant 5,531,650 - Azuma July 2, 1	1996-07-02

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