PROACT
Advanced Technology Materials, Inc.
Application Filed: 2007-03-20
Trademark Application Details
ABANDONED - NO STATEMENT OF USE FILED
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| Serial Number | 77136102 |
| Mark Drawing Code | 4000: Illustration: Drawing with word(s)/letter(s)/number(s) in Block form |
| Attorney Name | Steven J. Hultquist |
| Attorney Docket Number | 2771-564 TM |
| Law Office Assigned | L90 |
| Employee Name | RAUEN, JAMES A |
Timeline
| 2007-03-20 | Application Filed |
| 2008-10-07 | Published for Opposition |
| 2008-12-30 | Location: INTENT TO USE SECTION |
| 2009-08-03 | Abandon |
| 2009-08-03 | Status: Dead/Abandoned |
| 2018-07-08 | Transaction Date |
Trademark Applicants & Owners
| Owner: |  Advanced Technology Materials, Inc. |
| Address | 7 Commerce Drive Danbury DE 06810 |
| Legal Entity Type | Corporation |
| Legal Entity State | DE |
Documents
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Attorney of Record
Good, Services, and Codes
| International Codes: | 1 |
| U.S. Codes: | 001,005,006,010,026,046 |
| International Codes: | 3 |
| U.S. Codes: | 001,004,006,050,051,052 |
| International Codes: | 6 |
| U.S. Codes: | 002,012,013,014,023,025,050 |
| International Codes: | 7 |
| U.S. Codes: | 013,019,021,023,031,034,035 |
| International Codes: | 9 |
| U.S. Codes: | 021,023,026,036,038 |
| International Codes: | 16 |
| U.S. Codes: | 002,005,022,023,029,037,038,050 |
| International Codes: | 20 |
| U.S. Codes: | 002,013,022,025,032,050 |
| International Codes: | 35 |
| U.S. Codes: | 100,101,102 |
| International Codes: | 37 |
| U.S. Codes: | 100,103,106 |
| International Codes: | 40 |
| U.S. Codes: | 100,103,106 |
| International Codes: | 42 |
| U.S. Codes: | 100,101 |
| Type Code | Type |
|---|---|
| GS0011 | chemical reagents for non-medical purposes; chemical compositions capable of undergoing change by processing to yield chemical products for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; solvent compositions for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; doping compounds for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; chemical compositions that yield decomposition products or reaction products in processes employing same, for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; etchants for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; photoresists; chemicals for use in electrochemical deposition processes in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; metal plating chemical compositions; gases used for deposition, etching, lithography, planarization, plasma treatment, ashing, cleaning, ion implantation, and annealing, in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; materials used for deposition, etching, lithography, planarization, plasma treatment, ashing, cleaning, ion implantation, and annealing, in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; doping compound gases and chemical vapor deposition precursor gases for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; chemicals for use in treating hazardous gases produced in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits, to reduce the hazardous character of such gases; chemical source materials for the deposition of thin films in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; organometallic chemicals for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; ion implantation precursors for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; chemicals for use in chemical reagent delivery systems for use in the manufacture of microelectronic products, semiconductors, digital storage media and flat-panel displays; gases provided in a gas supply container holding adsorbent material on which the gas is adsorbed, for use in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits, for deposition, etching, lithography, planarization, plasma treatment, ashing, cleaning, ion implantation, and annealing; gaseous chemicals in vapor or liquid form, for use in deposition, etching, lithography, planarization, plasma treatment, ashing, cleaning, ion implantation and annealing, in the manufacture of microelectronic products, semiconductors, flat-panel displays, integrated circuits and in testing and qualification thereof; consumable solid, liquid and gaseous chemical compositions and cleaning compositions for use in the manufacture of semiconductors and flat panels; gases adsorbed on adsorbents in gas supply containers for sub-atmospheric pressure gas dispensing, for use in deposition, etching, lithography, planarization, plasma treatment, ashing, cleaning, ion implantation and annealing, in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; solid adsorbents for use in storage and dispensing of gases for use in deposition, etching, lithography, planarization, plasma treatment, ashing, cleaning, ion implantation and anneling, in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; ionic liquid storage media for use in storage and dispensing of gases for use in deposition, etching, lithography, planarization, plasma treatment, ashing, cleaning, ion implantation and annealing, in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; chemical storage media for use in storage and dispensing of gases for use in deposition, etching, lithography, planarization, plasma treatment, ashing, cleaning, ion implantation and annealing, in the manufacture of microelectronic products, semiconductors, digital storage media, flat-panel displays, and integrated circuits; solid and liquid chemicals provided in a vapor supply container for use in generating vapor for manufacture of microelectronic products, semiconductors, flat-panel displays, integrated circuits, electronic systems and subsystems; chemical compositions useful for removing microelectronics manufacturing fabrication materials from microelectronic products such as wafers and microelectronic devices, that are rejected after such microelectronics manufacturing fabrication materials have been deposited on them, and that are recycled following the removal of such materials; adsorbent materials having industrial gases adsorbed thereon |
Trademark Filing History
| Description | Date | Event Coding |
|---|---|---|
| NEW APPLICATION ENTERED IN TRAM | 2007-03-26 | 1 NWAP I:Incoming Correspondence |
| NOTICE OF PSEUDO MARK MAILED | 2007-03-27 | 2 MPMK O:Outgoing Correspondence |
| ASSIGNED TO EXAMINER | 2007-04-20 | 3 DOCK D:Assigned to Examiner |
| NON-FINAL ACTION WRITTEN | 2007-04-24 | 4 CNRT R:Renewal |
| NON-FINAL ACTION E-MAILED | 2007-04-24 | 5 GNRT F:First Action |
| TEAS RESPONSE TO OFFICE ACTION RECEIVED | 2007-10-24 | 6 TROA I:Incoming Correspondence |
| CORRESPONDENCE RECEIVED IN LAW OFFICE | 2007-10-24 | 7 CRFA I:Incoming Correspondence |
| TEAS/EMAIL CORRESPONDENCE ENTERED | 2007-10-25 | 8 TEME I:Incoming Correspondence |
| FINAL REFUSAL WRITTEN | 2007-11-15 | 9 CNFR R:Renewal |
| FINAL REFUSAL E-MAILED | 2007-11-15 | 10 GNFR O:Outgoing Correspondence |
| NOTIFICATION OF FINAL REFUSAL EMAILED | 2007-11-15 | 11 GNFN O:Outgoing Correspondence |
| EXPARTE APPEAL RECEIVED AT TTAB | 2008-05-15 | 12 EXAF T:TTAB Proceeding |
| JURISDICTION RESTORED TO EXAMINING ATTORNEY | 2008-05-15 | 13 JURT T:TTAB Proceeding |
| EX PARTE APPEAL-INSTITUTED | 2008-05-15 | 14 EXPI T:TTAB Proceeding |
| TEAS REQUEST FOR RECONSIDERATION RECEIVED | 2008-05-15 | 15 ERFR I:Incoming Correspondence |
| ASSIGNED TO LIE | 2008-05-16 | 16 ALIE A:Allowance for Publication |
| CORRESPONDENCE RECEIVED IN LAW OFFICE | 2008-05-19 | 17 CRFA I:Incoming Correspondence |
| TEAS/EMAIL CORRESPONDENCE ENTERED | 2008-05-19 | 18 TEME I:Incoming Correspondence |
| EXAMINERS AMENDMENT -WRITTEN | 2008-06-06 | 19 CNEA R:Renewal |
| EXAMINERS AMENDMENT E-MAILED | 2008-06-06 | 20 GNEA O:Outgoing Correspondence |
| NOTIFICATION OF EXAMINERS AMENDMENT E-MAILED | 2008-06-06 | 21 GNEN O:Outgoing Correspondence |
| EXAMINER'S AMENDMENT ENTERED | 2008-06-06 | 22 XAEC I:Incoming Correspondence |
| APPROVED FOR PUB - PRINCIPAL REGISTER | 2008-06-09 | 23 CNSA P: |
| LAW OFFICE PUBLICATION REVIEW COMPLETED | 2008-06-09 | 24 PREV O:Outgoing Correspondence |
| WITHDRAWN FROM PUB - OG REVIEW QUERY | 2008-06-23 | 25 PBCR Z:Deletion |
| PREVIOUS ALLOWANCE COUNT WITHDRAWN | 2008-07-09 | 26 ZZZX Z:Deletion |
| EXPARTE APPEAL TERMINATED | 2008-07-30 | 27 EXPT T:TTAB Proceeding |
| EXAMINERS AMENDMENT -WRITTEN | 2008-08-26 | 28 CNEA R:Renewal |
| EXAMINERS AMENDMENT E-MAILED | 2008-08-26 | 29 GNEA O:Outgoing Correspondence |
| NOTIFICATION OF EXAMINERS AMENDMENT E-MAILED | 2008-08-26 | 30 GNEN O:Outgoing Correspondence |
| EXAMINER'S AMENDMENT ENTERED | 2008-08-26 | 31 XAEC I:Incoming Correspondence |
| APPROVED FOR PUB - PRINCIPAL REGISTER | 2008-08-27 | 32 CNSA P: |
| LAW OFFICE PUBLICATION REVIEW COMPLETED | 2008-09-03 | 33 PREV O:Outgoing Correspondence |
| NOTICE OF PUBLICATION | 2008-09-17 | 34 NPUB O:Outgoing Correspondence |
| PUBLISHED FOR OPPOSITION | 2008-10-07 | 35 PUBO A:Allowance for Publication |
| NOA MAILED - SOU REQUIRED FROM APPLICANT | 2008-12-30 | 36 NOAM O:Outgoing Correspondence |
| ABANDONMENT - NO USE STATEMENT FILED | 2009-08-03 | 37 ABN6 S: |
| ABANDONMENT NOTICE MAILED - NO USE STATEMENT FILED | 2009-08-03 | 38 MAB6 O:Outgoing Correspondence |
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