U.S. patent number RE47,188 [Application Number 14/722,959] was granted by the patent office on 2019-01-01 for semiconductor device and method of manufacturing the same.
This patent grant is currently assigned to Sony Corporation. The grantee listed for this patent is Sony Corporation. Invention is credited to Takahiro Arakida, Rintaro Koda, Yuji Masui, Tomoyuki Oki.
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United States Patent |
RE47,188 |
Koda , et al. |
January 1, 2019 |
Semiconductor device and method of manufacturing the same
Abstract
The present invention provides a semiconductor device realizing
reduced occurrence of a defect such as a crack at the time of
adhering elements to each other. The semiconductor device includes
a first element and a second element adhered to each other. At
least one of the first and second elements has a pressure
relaxation layer on the side facing the other of the first and
second elements, and the pressure relaxation layer includes a
semiconductor part having a projection/recess part including a
projection projected toward the other element, and a resin part
filled in a recess in the projection/recess part.
Inventors: |
Koda; Rintaro (Tokyo,
JP), Arakida; Takahiro (Kanagawa, JP),
Masui; Yuji (Miyagi, JP), Oki; Tomoyuki
(Kanagawa, JP) |
Applicant: |
Name |
City |
State |
Country |
Type |
Sony Corporation |
Tokyo |
N/A |
JP |
|
|
Assignee: |
Sony Corporation (Tokyo,
JP)
|
Family
ID: |
40049599 |
Appl.
No.: |
14/722,959 |
Filed: |
May 27, 2015 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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12081354 |
Feb 1, 2011 |
7880178 |
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Reissue of: |
12929515 |
Jan 31, 2011 |
8450752 |
May 28, 2013 |
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Foreign Application Priority Data
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Apr 19, 2007 [JP] |
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2007-110512 |
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Current U.S.
Class: |
1/1 |
Current CPC
Class: |
H01S
5/18311 (20130101); H01S 5/18311 (20130101); H01S
5/0262 (20130101); H01S 5/0262 (20130101); H01S
5/04252 (20190801); H01S 5/18375 (20130101); H01S
5/0425 (20130101); H01S 5/0425 (20130101); H01S
5/0264 (20130101); H01S 5/18375 (20130101); H01S
5/0264 (20130101) |
Current International
Class: |
H01L
31/12 (20060101); H01S 5/026 (20060101); H01S
5/183 (20060101); H01S 5/042 (20060101) |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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06-23011 |
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Jun 1994 |
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JP |
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07-1812 |
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Jan 1995 |
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JP |
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08-181381 |
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Jul 1996 |
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JP |
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11-121878 |
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Apr 1999 |
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JP |
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2002-057283 |
|
Feb 2002 |
|
JP |
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2002-198502 |
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Jul 2002 |
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JP |
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2006-064481 |
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Mar 2006 |
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JP |
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Other References
Japanese Office Action dated Sep. 7, 2011 for corresponding
Japanese Application No. 2007-110512. cited by applicant.
|
Primary Examiner: Andujar; Leonardo
Attorney, Agent or Firm: Michael Best & Friedrich
LLP
Parent Case Text
CROSS REFERENCE TO RELATED APPLICATIONS
This is .Iadd.a Reissue Application of patent application Ser. No.
12/929,515, filed Jan. 31, 2011, now U.S. Pat. No. 8,450,752,
issued May 28, 2013, which is .Iaddend.a Divisional Application of
patent application Ser. No. 12/081,354, filed Apr. 15, 2008,
.Iadd.now U.S. Pat. No. 7,880,178, issued Feb. 1, 2011
.Iaddend.which claims priority from Japanese Patent Application JP
2007-110512 filed in the Japanese Patent Office on Apr. 19, 2007,
the entire contents of which being incorporated herein by
reference.
Claims
What is claimed is:
1. A semiconductor device comprising: a laser configured to radiate
a light emission, part of the light emission being transmissible
through a light transmitting part of a control layer and a resin
part of a projection/recess part; a group III-V compound light
absorption layer configured to convert said part of the light
emission into an electric signal, said control layer and said
projection/recess part being between said laser and said light
absorption layer.
2. The semiconductor device according to claim 1, wherein said
light transmitting part is an insulating material.
3. The semiconductor device according to claim 1, wherein said
light absorption layer is made of Al.sub.x11Ga.sub.1-x11As, with
0.ltoreq.x11.ltoreq.1.
4. The semiconductor device according to claim 1, wherein said
light absorption layer is a p-type layer.
5. The semiconductor device according to claim 1, wherein said
resin part physically contacts said light transmitting part.
6. The semiconductor device according to claim 1, wherein said
control layer is between said laser and said projection/recess
part.
7. The semiconductor device according to claim 6, wherein said
projection/recess part is between said control layer and said light
absorption layer.
8. The semiconductor device according to claim 1, wherein said
light transmitting part is between said resin part and said
laser.
9. The semiconductor device according to claim 8, wherein said
laser physically contacts said light transmitting part.
10. The semiconductor device according to claim 1, wherein said
projection/recess part is between said laser and said control
layer.
11. The semiconductor device according to claim 10, wherein said
control layer is between said projection/recess part and said light
absorption layer.
12. The semiconductor device according to claim 1, wherein said
resin part is between said light transmitting part and said
laser.
13. The semiconductor device according to claim 12, wherein said
laser physically contacts said resin part.
14. The semiconductor device according to claim 1, wherein a metal
part of the control layer is configured to reflect said light
emission.
15. The semiconductor device according to claim 14, wherein said
metal part is around said light transmitting part.
16. The semiconductor device according to claim 1, wherein said
resin part is a resin material.
.[.17. The semiconductor device according to claim 16, wherein said
resin material has elasticity higher than that of semiconductor
material, thermal conductivity of resin material being lower than
that of said semiconductor material..].
18. The semiconductor device according to claim 1, wherein a hole
is through a semiconductor part of the projection/recess part, said
resin part being in said hole.
19. The semiconductor device according to claim 18, wherein said
semiconductor part is a p-type layer.
20. The semiconductor device according to claim 18, wherein said
semiconductor part is made of Al.sub.x12Ga.sub.1-x12As with
0.ltoreq.x12.ltoreq.1.
21. The semiconductor device according to claim 1, wherein said
laser is a vertical cavity surface emitting laser, a first DBR
layer of the vertical cavity surface emitting laser being between
an active layer of the vertical cavity surface emitting laser and
said light absorption layer.
22. The semiconductor device according to claim 21, wherein an
active layer is between said first DBR layer and a second DBR
layer.
.Iadd.23. A semiconductor device comprising: a light emitting
device configured to radiate a light emission; a control layer that
includes a light transmitting member; a projection/recess member
that includes a resin; and a group III-V compound light absorption
layer configured to convert a part of the light emission into an
electric signal, wherein the part of the light emission is
transmissible through the light transmitting member and the resin,
and wherein the control layer and the projection/recess member are
between the light emitting device and the group III-V compound
absorption layer. .Iaddend.
.Iadd.24. The semiconductor device according to claim 23, wherein
the projection/recess member is between the light emitting device
and the control layer. .Iaddend.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor device having a
plurality of elements stacked and a method of manufacturing the
same.
2. Description of the Related Art
Hitherto, in a semiconductor device for a use of an optical fiber,
an optical disk, and the like, as part of an object of making the
light output level of a semiconductor light emitting element
assembled in the device constant, emission light of the light
emitting element is detected by a light detecting mechanism. The
light detecting mechanism may be constructed by, for example, a
reflector that branches part of emission light and a light
detecting element that detects the branched emission light. In the
configuration, however, the number of parts increases and,
moreover, a disadvantage occurs such that the reflector and the
light detecting element have to be disposed with high precision
with respect to the light emitting element. As one of measures
solving such a disadvantage, the light emitting element and the
light detecting element are integrally formed.
However, when the light emitting element and the light detecting
element are formed integrally, there is the possibility that the
light detecting element detects not only stimulated emission light
to be inherently detected but also spontaneous emission light. In
such a case, the light output level of the light emitting element
measured on the basis of light detected by the light detecting
element includes an error only by the amount of spontaneous
emission light. Therefore, the method is also not suitable for uses
necessitating high-precision control on the light output level.
Japanese Patent No. 2,877,785 discloses a technique of providing a
control layer in a light detecting element and interrupting part of
spontaneous emission light entering from a light emitting element
before the light detecting element detects it.
The control layer is formed by oxidizing a part of the
semiconductor material of the light detecting element. The
reflectance of the oxidized semiconductor material is not so high,
and the semiconductor material transmits some spontaneous emission
light. It is therefore difficult to sufficiently lower the
spontaneous emission light detection level of the light detecting
element. There is consequently a disadvantage such that light
detection precision is not sufficiently improved.
SUMMARY OF THE INVENTION
To solve the disadvantage, there is a method of providing a control
layer having a light transmission part in an area corresponding to
a light emission area of a light emitting element between the light
emitting element and a light detecting element and metal part
having high reflectance around the light transmission part, and
efficiently reflecting spontaneous emission light by the metal part
having high reflectance.
However, in the case of providing the control layer having such a
metal part between the light emitting element and the light
detecting element, the light emitting element and the light
detecting element may not be formed in a lump by crystal growth on
the same substrate. Consequently, usually, the light emitting
element and the light detecting element are formed on different
substrates. The control layer is provided on the surface of at
least one of the light emitting element and the light detecting
element. The light emitting element and the light detecting element
are adhered to each other with the control layer in between,
thereby integrally forming the light emitting element and the light
detecting element.
Generally, at the time of adhering the light emitting element and
the light detecting element to each other with the control layer in
between, in a state where the light emitting element and the light
detecting element are disposed so as to face each other and the
temperature is set to be high, pressure is applied in the stack
direction. However, when pressure is increased to improve adhesion
between the light emitting element and the light detecting element,
there is the possibility that a defect such as a crack occurs in
the light emitting element and the light detecting element. When
the pressure is decreased to prevent occurrence of a defect such as
a crack in the light emitting element and the light detecting
element, there is the possibility that adhesion between the light
emitting element and the light detecting element deteriorates.
As described above, the conventional method has a disadvantage such
that the yield easily deteriorates in the process of adhering the
light emitting element and the light detecting element. Such a
disadvantage always occurs at the time of adhering the elements to
each other.
It is therefore desirable to provide a semiconductor device and a
method of manufacturing the same realizing suppression of
occurrence of a defect such as a crack at the time of adhering the
elements to each other.
According to an embodiment of the present invention, there is
provided a first semiconductor device including a first element and
a second element adhered to each other. At least one of the first
and second elements has a pressure relaxation layer on the side
facing the other of the first and second elements, and the pressure
relaxation layer includes a semiconductor part having a
projection/recess part including a projection projected toward the
other element, and a resin part filled in a recess in the
projection/recess part.
In the first semiconductor device of the embodiment of the present
invention, at least one of the first and second elements adhered to
each other is provided with the pressure relaxation layer including
a semiconductor part having a projection/recess part including a
projection projected toward the other element, and a resin part
filled in a recess in the projection/recess part. With the
configuration, in a manufacturing process, at the time of adhering
the elements while applying pressure in a state where the
projecting direction of the projection in the projection/recess
part is set toward the other element, the pressure applied to the
first and second elements is relaxed by the elasticity of the resin
part.
According to an embodiment of the present invention, there is
provided a second semiconductor device including a first element
and a second element adhered to each other. At least one of the
first and second elements has a semiconductor part and a resin
part.
In the second semiconductor device of the embodiment of the present
invention, at least one of the first and second elements adhered to
each other is provided with a semiconductor part and a resin part.
With the configuration, for example, at the time of adhering the
first and second elements while applying pressure in a state where
the first and second elements are disposed so as to face each
other, the pressure applied to the first and second elements is
relaxed by the elasticity of the resin part.
According to an embodiment of the present invention, there is
provided a method of manufacturing the first semiconductor device
including the steps of preparing a first element and a second
element at least one of which has, on its one of faces, a pressure
relaxation layer including a semiconductor part having a
projection/recess part and a resin part filled in a recess in the
projection/recess part, and adhering the first and second elements
to each other by applying pressure in a state where projecting
direction of the projection in the projection/recess part is set
toward the other element.
In the method of manufacturing the first semiconductor device of
the embodiment of the present invention, at least one of the first
and second elements is provided with, on the adhesion side, the
pressure relaxation layer including a semiconductor part having a
projection/recess part and a resin part filled in a recess in the
projection/recess part. Therefore, the pressure applied to the
first and second elements is relaxed by the elasticity of the resin
part.
According to an embodiment of the present invention, there is
provided a method of manufacturing the second semiconductor device
including a step of adhering first and second elements at least one
of which has a semiconductor part and a resin part to each other
while applying pressure in a state where the first and second
elements are disposed so as to face each other.
In the method of manufacturing the second semiconductor device of
the embodiment of the present invention, at least one of the first
and second elements is provided with the semiconductor part and the
resin part, so that the pressure applied to the first and second
elements is relaxed by the elasticity of the resin part.
In the first and second semiconductor devices of the embodiment of
the present invention, at the time of adhering the first and second
elements to each other in the manufacturing process, the pressure
applied to the first and second elements may be relaxed by the
elasticity of the resin part. Also in the case where large pressure
is applied to the first and second elements, an excessive amount of
the pressure is lessened by the resin part. Therefore, occurrence
of a defect such as a crack may be reduced at the time of adhering
the elements to each other.
By the method of manufacturing the first and second semiconductor
devices of the embodiment of the present invention, the pressure
applied to the first and second elements may be relaxed by the
elasticity of the resin part. Also in the case where large pressure
is applied to the first and second elements, an excessive amount of
the pressure is lessened by the resin part. Therefore, occurrence
of a defect such as a crack may be reduced at the time of adhering
the elements to each other.
Other and further objects, features and advantages of the invention
will appear more fully from the following description.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a sectional configuration diagram of a semiconductor
light emitting device as a first embodiment of the invention.
FIG. 2 is a cross section showing an example of a sectional
configuration taken along line A-A of FIG. 1.
FIG. 3 is a cross section showing another example of the sectional
configuration taken along line A-A of FIG. 1.
FIGS. 4A and 4B are cross sections illustrating a manufacturing
process of the semiconductor light emitting device.
FIG. 5 is a cross section illustrating a process subsequent to FIG.
4B.
FIG. 6 is a cross section illustrating a process subsequent to FIG.
5.
FIGS. 7A and 7B are cross sections illustrating a process
subsequent to FIG. 6.
FIG. 8 is a cross section illustrating a process subsequent to FIG.
7B.
FIG. 9 is a cross section illustrating a process subsequent to FIG.
8.
FIGS. 10A and 10B are cross sections illustrating a process
subsequent to FIG. 9.
FIGS. 11A and 11B are cross sections illustrating a process
subsequent to FIG. 10B.
FIG. 12 is a cross section illustrating the operation of the
semiconductor light emitting device.
FIG. 13 is a sectional configuration diagram of a semiconductor
light emitting device as a modification.
FIG. 14 is a sectional configuration diagram of a semiconductor
light emitting device as a second embodiment of the present
invention.
FIG. 15 is a sectional configuration diagram of a semiconductor
light emitting device as a modification.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
Embodiments of the present invention will be described hereinbelow
with reference to the drawings.
First Embodiment
FIG. 1 shows a sectional configuration of a semiconductor light
emitting device as a first embodiment of the present invention.
FIG. 2 shows a sectional configuration taken along line A-A of FIG.
1. FIG. 1 corresponds to a sectional configuration taken along line
B-B of FIG. 2 or 3. FIGS. 1 to 3 are schematic diagrams, and
dimensions and shapes are different from actual ones. The
semiconductor light emitting device is constructed by disposing, on
a light detecting element 1, a control layer 2 and a vertical
cavity surface emitting laser (VCSEL) 3 in order. The light
detecting element 1, the control layer 2, and the VCSEL 3 are
integrally formed.
In the semiconductor light emitting device, light of the VCSEL 3 is
emitted from an aperture 39A (which will be described later) to the
outside and is slightly output to the light detecting element 1 via
the control layer 2. Specifically, in the semiconductor light
emitting device, the control layer 2 and the light detecting
element 1 are stacked in this order on the VCSEL 3 on the side
opposite to the side where the light of the VCSEL 3 is emitted to
the outside. An electric signal (photocurrent) according to the
output level of light leaked to the light detecting element 1 side
is output from the light detecting element 1.
VCSEL 3
The VCSEL 3 has a stack stntcture in which, for example, a p-type
contact layer 31, a p-type DBR layer 32, a current confinement
layer 33, a p-type cladding layer 34, an active layer 35, an n-type
cladding layer 36, an n-type DBR layer 37, and an n-type contact
layer 38 are stacked in order on the control layer 2. The stack
structure has, for example, a mesa shape including steps in the
p-type DBR layer 32.
The p-type contact layer 31 is made of, for example, p-type
Al.sub.x1Ga.sub.1-x1As (0.ltoreq.x1.ltoreq.1). Examples of p-type
impurity are zinc (Zn), magnesium (Mg), beryllium (Be), and carbon
(C).
The p-type DBR layer 32 is constructed by alternately stacking a
low-refractive-index layer (not shown) and a high-refractive-index
layer (not shown). The low-refractive-index layer is made of, for
example, p-type Al.sub.x2Ga.sub.1-x2As (0<x2.ltoreq.1) having a
thickness of .lamda.o/4n.sub.1 (n.sub.1 denotes refractive index),
and the high-refractive-index layer is made of, for example, p-type
Al.sub.x3Ga.sub.1-x3As (0.ltoreq.x3<x2) having a thickness of
.lamda.o/4n.sub.2 (n.sub.2 denotes refractive index).
The current confinement layer 33 has a current confinement area 33B
in its outer edge area and a current injection area 33A in its
center area. The current injection area 33A is made of, for
example, p-type Al.sub.x4Ga.sub.1-x4As (0<x4.ltoreq.1). The
current confinement area 33B is made of, for example, a material
containing Al.sub.2O.sub.3 (aluminum oxide) and, as will be
described later, is obtained by oxidizing Al of high density
included in a current confinement layer 33D from the side face.
Therefore, the current confinement layer 33 has the function of
confining current.
The p-type cladding layer 34 is made of, for example, p-type
Al.sub.x5Ga.sub.1-x5As (0.ltoreq.x5.ltoreq.1). The active layer 35
is made of, for example, undoped Al.sub.x6Ga.sub.1-x6As
(0.ltoreq.x6.ltoreq.1). In the active layer 35, an area facing the
current injection area 33A is a light emission area 35A. The n-type
cladding layer 36 is made of, for example, n-type
Al.sub.x7Ga.sub.1-x7As (0.ltoreq.x7.ltoreq.1).
The n-type DBR layer 37 is formed by alternately stacking a
low-refractive-index layer (not shown) and a high-refractive-index
layer (not shown). The low-refractive-index layer is made of, for
example, n-type Al.sub.x8Ga.sub.1-x8As (0<x8.ltoreq.1) having a
thickness of .lamda.o/4n.sub.3 (n.sub.3 denotes refractive index),
and the high-refractive-index layer is made of, for example, n-type
Al.sub.x9Ga.sub.1-x9As (0.ltoreq.x9<x8) having a thickness of
.lamda.o/4n.sub.4 (n.sub.4 denotes refractive index).
The n-type contact layer 38 is made of, for example, n-type
Al.sub.x10Ga.sub.1-x10As (0.ltoreq.x10.ltoreq.1). The n-type
contact layer 38 has, for example, an aperture corresponding to the
light emission area 35A and has a donut shape.
The VCSEL 3 also includes an n-side electrode 39 on the n-type
contact layer 38. The n-side electrode 39 has a structure obtained
by stacking, for example, an alloy of gold (Au) and germanium (Ge),
nickel (Ni), and gold (Au) in order from the n-type contact layer
38 side, and is electrically connected to the n-type contact layer
38. The n-side electrode 39 has, for example, the aperture 39A in
correspondence with the light emission area 35A and has a donut
shape.
Control Layer 2
The control layer 2 has a light transmitting part 21 and a metal
part 22 in the same plane. The light transmitting part 21 is
provided at least in a part of an area facing the light emission
area 35A in the VCSEL 3. The metal part 22 is provided around the
light transmitting part 21. In the relation with light emitted from
the VCSEL 3, it is said that the metal part 22 has an aperture at
least in a part of the area facing the light emission area 35A.
FIG. 1 shows the case where the light transmitting part 21 is
provided in the whole area facing the light emission area 35A.
The light transmitting part 21 is made of a material capable of
transmitting light emitted from the light emission area 35A, for
example, an insulting material such as SiN, SiO.sub.2 or air. The
light transmitting part 21 transmits light released to the light
detecting element 1 side in the light emitted from the light
emission area 35A. On the other hand, the metal part 22 is made of
a metal having high reflectance, for example, gold (Au) or the
like. The metal part 22 reflects the light emitted to an area other
than the light transmitting part 21 in the light emitted to the
light detecting element 1 side toward the VCSEL 3 side, thereby
interrupting entrance to the light detecting element 1. That is,
the control layer 2 has not only the function of joining the light
detecting element 1 and the VCSEL 3 to each other but also the
function of regulating the incidence area of light to the light
detecting element 1. The metal part 22 is electrically connected to
the p-type contact layer 31 in the VCSEL 3 and also functions as
the p-side electrode of the VCSEL 3.
Preferably, the control layer 2 is formed, for example, according
to a manufacturing method which will be described later. At the
time of overlapping the light detecting element 1 and the VCSEL 3,
a control layer 2A having a light transmitting part 21A and a metal
part 22A and formed on the surface of the light detecting element 1
and a control layer 2B having a light transmitting part 21B and a
metal part 22B and formed on the surface of the VCSEL 3 are joined
to each other.
In this case, by joining the light transmitting parts 21A and 21B
to each other, the light transmitting part 21 is formed. By joining
the metal parts 22A and 22B, the metal part 22 is formed. The
control layer 2 may be formed in advance on the surface of either
the light detecting element 1 or the VCSEL 3 at the time of
overlapping the light detecting element 1 and the VCSEL 3.
Light Detecting Element 1
The light detecting element 1 has, on a substrate 10, a light
absorption layer 11, a p-type semiconductor part 12, and a resin
part 13 in order from the substrate 10 side and has, on the back
side of the substrate 10, an n-side electrode 14. The p-type
semiconductor part 12 and the resin part 13 are formed in the same
plane.
The substrate 10 is made of, for example, n-type GaAs. The light
absorption layer 11 is made of, for example,
Al.sub.x11Ga.sub.1-x11As (0.ltoreq.x11.ltoreq.1) and is provided at
least in an area facing the light transmitting part 21. With the
configuration, the light absorption layer 11 absorbs part of light
output from the light emission area 35A and converts the absorbed
light to an electric signal. The electric signal is input as a
light output monitor signal to a light output computing circuit
(not shown) connected to the light detecting element 1, and used
for measuring the output level of light passed through the control
layer 2 in the light output computing circuit.
The p-type contact part 12 is made of, for example, p-type
Al.sub.x12Ga.sub.1-x12As (0.ltoreq.x12.ltoreq.1).
High-concentration p-type impurity may be doped only in an upper
part of the p-type semiconductor part 12. The p-type semiconductor
part 12 has, in a stack plane, a projection/recess part 12A
including one or more projections 12A-1 and one or more recesses
12A-2. The projection 12A-1 projects toward the VCSEL 3 (on the
side of the VCSEL 3, of the p-type semiconductor part 12).
Preferably, the projection/recess part 12A is provided on the side
of the surface facing the VCSEL 3, and the height of the projection
12A-1 (the depth of the recess 12A-2) is 1 .mu.m or greater. In
this case, elasticity of the resin part 13 may be used more
effectively in an adhering process which will be described later.
Preferably, the projection 12A-1 has conductivity and is
electrically connected to the metal part 22. In this case, the
metal part 22 can be used as a p-side electrode of the light
detecting element 1.
The recess 12A-2 is filled with the resin part 13. The resin part
13 is made of a resin material having a property of transmitting
light emitted from the VCSEL 3 such as polyimide. Generally, resin
material has elasticity higher than that of semiconductor material
and thermal conductivity lower than that of semiconductor material.
Preferably, the recess 12A-2 is provided at least in an area facing
the light transmitting part 21. In this case, the light passed
through the light transmitting part 21 in the light emitted from
the VCSEL 3 is led to the light absorption layer 11 while
suppressing attenuation of the light as much as possible.
The recess 12A-2 may be a dent or groove formed in the surface on
the control layer 2 side of the p-type semiconductor part 12 or a
hole penetrating the p-type semiconductor part 12 as shown in FIG.
1. In the case where the recess 12A-2 is a hole, as shown in FIG.
1, the light absorption layer 11 is exposed from the bottom of the
recess 12A-2.
The n-side electrode 14 has a structure in which, for example, an
AuGe alloy, Ni, and Au are stacked in order from the substrate 10
side, and is electrically connected to the substrate 10.
The semiconductor light emitting device having such a configuration
is manufactured as follows. FIGS. 4A and 4B to FIGS. 11A and 11B
show the manufacturing method in the process order.
First, on the substrate 10, the light absorption layer 11 and the
p-type semiconductor part 12 are stacked in this order (FIG. 4A).
Subsequently, a photoresist (not shown) is formed in an area
including the area facing an area where the metal part 22 is to be
formed. Using the photoresist as a mask, the p-type semiconductor
part 12 is selectively removed by, for example, dry etching to
expose a part of the light absorption layer 11 (FIG. 4B). As a
result, the projection/recess part 12A including the projections
12A-1 and the recess 12A-2 is formed in the p-type semiconductor
part 12. After that, the mask is removed.
The recess 12A-2 is filled with a resin such as polyimide to
thereby forming the resin part 13 (FIG. 5). At this time, the
height of the resin part 13 is set to be equal to or higher than
that of the projection 12A-1.
Next, on a substrate 40 made of, for example, n-type GaAs, the
n-type contact layer 38, the n-type DBR layer 37, the n-type
cladding layer 36, the active layer 35, the p-type cladding layer
34, the current confinement layer 33D, the p-type DBR layer 32, and
the p-type contact layer 31 are stacked in this order (FIG. 6).
An insulating material such as SiO.sub.2 is deposited on the p-type
semiconductor part 12, the resin part 13, and the p-type contact
layer 31, and a photoresist (not shown) is formed in an area
corresponding to the light emission area 35A in the surface of the
deposited insulating material. Subsequently, the photoresist is
used as a mask and the insulating material is selectively removed
by, for example, wet etching using a hydrofluoric acid etchant,
thereby forming the light transmitting parts 21A and 21B. A metal
such as gold (Au) is deposited by the vacuum evaporation method and
the photoresist is removed, thereby forming the metal parts 22A and
22B. In such a manner, the control layers 2A and 2B are formed
(FIGS. 7A and 7B).
The control layers 2A and 2B are set so as to face each other. In a
state where the projection direction of the projections 12A-1 is
set toward the control layer 2B and the temperature is set to be
high, the control layers 2A and 2B are adhered to each other while
applying a pressure F from the substrates 10 and 40 sides (FIG. 8).
As a result, the control layer 2 is formed, and the substrates 10
and 40 are adhered to each other with the control layer 2 in
between. After that, the substrate 40 is removed by, for example,
wet etching (FIG. 9).
Next, a mask (not shown) is formed in a predetermined area in the
surface of the n-type contact layer 38. The n-type contact layer
38, the n-type DBR layer 37, the n-type cladding layer 36, the
active layer 35, the p-type cladding layer 34, the current
confinement layer 33D, and a part of the p-type DBR layer 32 are
selectively removed by, for example, dry etching, thereby forming a
mesa shape. After that, the mask is removed (FIG. 10A). At this
time, a part of the p-type DBR layer 32 is exposed.
An oxidizing process is performed at high temperature in the vapor
atmosphere to selectively oxidize the current confinement layer 33D
from the side face of the mesa. By the operation, the outer
peripheral area of the current confinement layer 33D becomes an
insulating layer (aluminum oxide). As a result, the current
confinement area 33B is formed in the outer peripheral area, and
the center area becomes the current injection area 33A. In such a
manner, the current confinement layer 33 is formed (FIG. 10B).
In a manner similar to the above, the exposed portion in the p-type
DBR layer 32 and the p-type contact layer 31 are selectively
removed (FIG. 11A), thereby forming a mesa shape having a step in
some midpoint of the p-type DBR layer 32 and exposing a part of the
metal part 22. Subsequently, a mask (not shown) having an aperture
in a center portion of the top face of the mesa is formed. For
example, by wet etching, an aperture is formed in the n-type
contact layer 38. After that, the mask is removed (FIG. 11B).
Next, for example, by evaporation, the n-side electrode 39 having
the aperture 39A is formed on the surface of the n-type contact
layer 38 and, further, the n-side electrode 14 is formed on the
back side of the substrate 10 (FIG. 1). In such a manner, the
semiconductor light emitting device of the embodiment is
manufactured.
In the semiconductor light emitting device of the embodiment, when
a predetermined voltage is applied across the metal part 22 as a
p-side electrode and the n-side electrode 39, the current narrowed
by the current confinement layer 33 is injected to the light
emission area 35A as a gain area in the active layer 35. As a
result, light is generated by recombination of electrons and
positive holes. The light includes not only light generated by
stimulated emission but also light generated by spontaneous
emission. As a result of repetition of stimulated emission in the
device, a laser oscillation occurs at a predetermined wavelength
Xo. Light L1 including the wavelength .lamda.o is output to the
outside, and light L2 including the wavelength .lamda.o is output
to the light detecting element 1 side (FIG. 12).
Since the light absorption layer 11 in the light detecting element
1 is disposed in correspondence with the light emission area 35A,
the light L2 passes through the light transmitting part 21 and the
resin part 13 and is incident on the light absorption layer 11. A
part of the light L2 incident on the light absorption layer 11 is
absorbed by the light absorption layer 11 and converted to an
electric signal (photocurrent) according to the output level of the
absorbed light. The electric signal has intensity according to the
output level of light output from the VCSEL 3 to the outside. The
electric signal is output to a light output computing circuit (not
shown) via a wire (not shown) electrically connected to the metal
part 22 as the p-side electrode and the n-side electrode 14 and
then received as a light output monitor signal in the light output
computing circuit. In such a manner, the output level of the light
output from the VCSEL 3 to the outside is measured.
Most of the spontaneous emission light (light L2) output to the
light detecting element 1 side passes through the light
transmitting part 21 and the resin part 13 and enter the light
detecting element 1. On the other hand, most of the spontaneous
emission light (light L3) output to the light detecting element 1
side is reflected by the metal part 22 toward the VCSEL 3 side, and
incidence to the light detecting element 1 is interrupted for the
following reason. The stimulated emission light has directivity and
is hardly released to the metal part 22 side. Meanwhile, the
spontaneous emission light does not have directivity and most of it
is released to the metal part 22 side. Consequently, the amount of
the spontaneous emission light passing through the light
transmitting part 21 is made much smaller than that of the
stimulated emission light passing through the light transmitting
part 21. Since the reflectance of the metal part 22 is usually
extremely high, the amount of the spontaneous emission light
passing through the metal part 22 is ignorable as compared with the
amount of the spontaneous emission light passing through the light
transmitting part 21.
Therefore, in the semiconductor light emitting device of the
embodiment, the control layer 2 having the light transmitting part
21 and the metal part 22 is provided between the VCSEL 3 and the
light detecting element 1, so that entry of the spontaneous
emission light released to the control layer 2 side to the light
detecting element 1 is substantially interrupted. As a result, the
detection level of the spontaneous emission light by the light
detecting element 1 is lowered, so that light detection precision
is further improved.
In the embodiment, the resin part 13 is provided near the control
layer 2 adhering the light detecting element 1 and the VCSEL 3. The
resin part 13 is made of a resin material having elasticity higher
than that of a semiconductor material. Consequently, in the process
of adhering the light detecting element 1 and the VCSEL 3, the
pressure F applied to the elements is relaxed by the elasticity of
the resin part 13. Even in the case where the pressure F is high,
an excessive amount of the pressure is lessened by the resin part
13. Therefore, occurrence of a defect such as a crack is reduced at
the time of adhering the light detecting element 1 and the VCSEL
3.
In the embodiment, the resin part 13 is made of a resin material
having thermal conductivity lower than that of the semiconductor
material. By properly adjusting the position and the shape of the
recess 12A-2, the area ratio between the projection 12A-1 and the
recess 12A-2, the kind of the resin material, and the like, for
example, in a process of mounting the semiconductor light emitting
device on a sub-mount, a heat sink, a can, or the like via a
solder, the resin part 13 suppresses rapid conduction of heat from
the light detecting element 1 side to the VCSEL 3 side. It
eliminates the possibility that the VCSEL 3 is heated excessively.
Thus, heat resistance of the semiconductor light emitting device is
increased.
Since the p-type semiconductor part 12 (the projection 12A-1)
contains the p-type impurity and the substrate 10 contains the
n-type impurity, they have conductivity. Further, the p-type
semiconductor part 12 (the projection 12A-1) is electrically
connected to the metal part 22, and the substrate 10 is
electrically connected to the n-side electrode. With the
configuration, an electric signal converted by the light absorption
layer 11 may be taken from the metal part 22 and the n-side
electrode 14. That is, the metal part 22 has not only the function
of suppressing entry of the spontaneous emission light to the light
detecting element 1 but also the function of the p-side electrode
of the light detecting element 1. Therefore, it is unnecessary to
provide a p-side electrode for the light detecting element 1. The
metal part 22 is electrically connected also to the p-type contact
layer 31 of the VCSEL 3. That is, since the metal part 22 also
functions as the p-side electrode of the VCSEL 3, it is unnecessary
to provide a p-side electrode for the VCSEL 3.
Since the control layer 2 is formed by using a technique of
extremely high process precision such as photolithography, as
compared with the case of forming an oxidation layer that disturbs
transmission of the spontaneous emission light by oxidizing a part
of the semiconductor layer by using an oxidation process whose
controllability is not easy like Japanese Patent No. 2,877,785, the
shape, size, and the like is obtainable with higher precision.
Therefore, variations in the properties of semiconductor light
emitting devices may be reduced largely.
It is also unnecessary to use a process causing volume shrinkage
such as oxidation of a semiconductor layer like in Japanese Patent
No. 2,877,785 or the like in order to eliminate the spontaneous
emission light. There is consequently no possibility that peeling
caused by volume shrinkage occurs in the control layer 2. Thus, the
yield and reliability is much higher than that in the case of
forming a layer for eliminating the spontaneous emission light by
using the process accompanying volume shrinkage such as oxidation
of a semiconductor layer.
Since the metal parts 22A and 22B are joined to each other,
adhesion between the light detecting element 1 and the VCSEL 3 may
be increased. Since the joined parts do not peel from each other,
it is not feared that the yield and reliability deteriorates due to
the joining.
Since the light detecting element 1 and the VCSEL 3 are
crystal-grown on different substrates, as compared with the case
where they are formed on the same substrate, crystal growth may be
performed at higher quality. As a result, the device properties and
reliability are further improved.
Modification of First Embodiment
In the foregoing embodiment, the p-type semiconductor part 12 and
the resin part 13 are provided on the light detecting element 1
side. Alternately, they may be provided on the VCSEL 3 side, as
shown in FIG. 13. Also in the case of providing the resin part 13
on the VCSEL 3 side, effects similar to those of the foregoing
embodiment are produced. In this case, it is preferable to provide
the p-type contact layer 15 between the contact layer 2 and the
light absorption layer 11.
Second Embodiment
FIG. 14 shows the structure of a semiconductor light emitting
device as a second embodiment of the present invention. FIG. 14 is
a schematic diagram and dimensions and shapes in FIG. 14 are
different from actual ones. In the following description, when the
same reference numeral as that in the foregoing embodiment is used,
it means that the component has the configuration and function
similar to those of the component having the same reference
numeral.
The semiconductor light emitting device is formed by disposing the
control layer 2 and a light detecting element 5 in order on a VCSEL
4 and integrally forming the VCSEL 4, the control layer 2, and the
light detecting element 5. In the semiconductor light emitting
device, light emitted from the VCSEL 4 goes out via the control
layer 2 and the light detecting element 5 from an aperture 17A
(which will be described later) to the outside. Further, an
electric signal according to the output level of light entering the
light detecting element 5 is output from the light detecting
element 5.
Specifically, in the semiconductor light emitting device, the
control layer 2 and the light detecting element 5 are disposed in
this order on the side where light emitted from the VCSEL 4 mainly
goes out to the outside. The positions of the control layer 2 and
the light detecting element 5 relative to the VCSEL 4 are mainly
different from those of the foregoing embodiment. In the following,
the different point will be mainly described in detail, and the
description of the configurations, operations, and effects similar
to those of the foregoing embodiment will not be repeated.
VCSEL 4
The VCSEL 4 has a stack structure in which the n-type DBR layer 37,
the n-type cladding layer 36, the active layer 35, the p-type
cladding layer 34, the current confinement layer 33, the p-type DBR
layer 32, and the p-type contact layer 31 are stacked in order on
the surface of a substrate 41. An n-side electrode 42 is formed on
the back side of the substrate 41. The substrate 41 is made of, for
example, n-type GaAs. The n-side electrode 42 has a structure in
which, for example, an AuGe alloy, Ni, and Au are stacked in order
from the substrate 40 side and is electrically connected to the
substrate 41.
Light Detecting Element 5
The light detecting element 5 has, on the control layer 2, the
p-type semiconductor part 12 and the resin part 13 formed in the
same plane, the light absorption layer 11, the n-type contact layer
16, and the n-side electrode 17 in order from the control layer 2
side. The n-type contact layer 16 is made of, for example, n-type
Al.sub.x12Ga.sub.1-x12As (0.ltoreq.x12.ltoreq.1). The n-type
contact layer 16 has, for example, an aperture in correspondence
with the light emission area 35A and has a donut shape. The n-side
electrode 17 has a stack structure in which an AuGe alloy, Ni, and
Au are stacked in order from the control layer 2 side, and is
electrically connected to the substrate 41. The n-side electrode 17
has, for example, the aperture 17A in correspondence with the light
emission area 35A and has a donut shape.
In the semiconductor light emitting device of the embodiment, like
the foregoing embodiment, the control layer 2 having the light
transmitting part 21 and the metal part 22 is provided between the
VCSEL 4 and the light detecting element 1, so that entry of the
spontaneous emission light released to the control layer 2 side to
the light detecting element 1 is substantially interrupted. As a
result, the detection level of the spontaneous emission light by
the light detecting element 1 may be lowered, so that light
detection precision may be further improved.
In the embodiment, like the foregoing embodiment, the resin part 13
is provided near the control layer 2 adhering the light detecting
element 1 and the VCSEL 4. Consequently, even in the case where the
pressure F is high, an excessive amount of the pressure is lessened
by the resin part 13. Therefore, occurrence of a defect such as a
crack may be reduced at the time of adhering the light detecting
element 1 and the VCSEL 4.
Modification of Second Embodiment
Although the p-side semiconductor part 12 and the resin part 13 are
provided on the light detecting element 5 side in the foregoing
embodiment, as shown in FIG. 15, they may be provided on the VCSEL
4. As described above, also in the case of providing the resin part
13 on the VCSEL 4 side, effects similar to those of the embodiment
are produced. In this case, it is preferable to provide a p-type
contact layer 18 between the control layer 2 and the light
absorption layer 11.
Although the present invention has been described by the
embodiments, the invention is not limited to the embodiments but
can be variously modified.
For example, the case of using a GaAs-based compound semiconductor
as the semiconductor material has been described in the foregoing
embodiments, other materials such as a GaInP-based (red-based)
material, an AlGaAs-based (infra-red-based) material, a GaN-based
(blue-green-based) material, or the like may be also used.
In the foregoing embodiments, the measures of applying the present
invention to the case of integrally forming the surface-emitting
semiconductor laser and the light detecting element via the control
layer 2 have been described. The invention is also applicable to
the case of using another light emitting device such as a light
emitting diode in place of the surface-emitting semiconductor
laser. The invention is also applicable to the case of using a
conductive substrate capable of passing current in the thickness
direction in place of a light detecting element.
It should be understood by those skilled in the art that various
modifications, combinations, sub-combinations and alternations may
occur depending on design requirements and other factors insofar as
they are within the scope of the appended claims or the equivalents
thereof.
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