U.S. patent number RE38,682 [Application Number 10/084,770] was granted by the patent office on 2005-01-04 for grating coupled vertical cavity optoelectronic devices.
This patent grant is currently assigned to University of Connecticut. Invention is credited to Geoff W Taylor.
United States Patent |
RE38,682 |
Taylor |
January 4, 2005 |
Grating coupled vertical cavity optoelectronic devices
Abstract
A edge emitting waveguide laser is obtained that derives its
optical power from a vertical cavity laser structure. The vertical
cavity laser with top and bottom Distributed Bragg Reflectors
produces stimulated emission by resonance in the vertical direction
but the optical power so generated is diffracted by a second order
grating into an optical mode propagating in the optical waveguide
formed by the upper and lower mirrors as cladding layers. The
efficiency of the diffraction grating and the reflectivity of the
mirrors are maximized so that essentially all of the light is
coupled into the guide and the loss through the mirrors can be
neglected. The same structure can be utilized as a detector, a
modulator or an amplifier. The designated laser structure to
achieve this form of operation is the inversion channel laser which
is a laterally injected laser having both contacts on the top side
of the device. Then the anode and cathode of the laser are
essentially coplanar electrodes and the device is implemented in
the form of a traveling wave laser, detector, modulator or
amplifier which forms the basis for very high frequency
performance.
Inventors: |
Taylor; Geoff W
(Storrs-Mansfield, CT) |
Assignee: |
University of Connecticut
(Storrs, CT)
|
Family
ID: |
26703859 |
Appl.
No.: |
10/084,770 |
Filed: |
February 26, 2002 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
|
Reissue of: |
949502 |
Oct 14, 1997 |
06031243 |
Feb 29, 2000 |
|
|
Current U.S.
Class: |
372/50.11;
257/98; 372/45.01; 372/96; 372/99 |
Current CPC
Class: |
H01S
5/2275 (20130101); H01S 5/18372 (20130101); H01S
5/2027 (20130101); H01S 5/0424 (20130101); H01S
5/06203 (20130101); H01S 5/06226 (20130101); H01S
5/12 (20130101); H01S 5/18341 (20130101); H01S
5/18369 (20130101); H01S 5/18308 (20130101) |
Current International
Class: |
H01S 003/19 () |
Field of
Search: |
;372/45,46,50,99,96,102
;257/98,96,194 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
Analysis of grating-coupled radiation in GaAs:GaAlAs lasers and
waveguides, W. Streifer, D. R. Scifres and R. Burnham, IEEE Journal
of Quantum Electronics, vol. 12, No. 7, pp. 422-428, Jul. 1976.*
.
Second-Order distributed feedback lasers with mode selection
provided by first-order radiation losses, R.F.Kazarinov and
C.H.Henry, IEEE Jornal of Quantum Electronics, vol. 21, No. 2, pp.
144-150, May 1985.* .
Watt-range coherent, uniphase powers from phase-locked arrays of
antiguided diode lasers, D.Botez, M.Jansem, L.J.Mawst, G.Peterson,
and T.J.Roth, IEEE Journal of Quantum Electronics, vol. 58, No. 19,
pp. 2070-2072, May 1991.* .
Normal-incidence grating couplers in Ge-Si, J.Sarathy, R.A.Mayer,
K.Jung, S.Unnikrishnan, D.-L.Kwong, and J.C.Campbell, Optics
Letters, vol. 19, No. 11, pp. 798-800, Feb. 1994.* .
"Analysis of Grating-Coupled Radiation in GaAs:GaAIAs Lasers and
Waveguides" by Streifer let al., published in Jul. 1976, pp.
458-464. .
"Second-Order Distributed Feedback Lasers with Mode Selection
Provided by First Order Radiation Losses" by Kazarinov et al.,
published in Oct. 1984, pp. 144-150. .
"Watt-range Coherent, Uniphase Powers from Phase-locked Arrays of
Antiguided Diode Lasers" by Botez, et al., published Mar. 1991, pp.
2070-2072. .
"Normal-incidence Grating Couplers in Ge-Si" by Sarathy et al.,
published Jun. 1994, pp. 798-800..
|
Primary Examiner: Tran; Minh Loan
Attorney, Agent or Firm: Gordon & Jacobson, P.C.
Parent Case Text
CROSS REFERENCE TO RELATED APPLICATIONS
This application is a continuation of application Ser. No.
60/028,577, filed Oct. 16, 1996, abandoned.
Claims
What is claimed is:
1. A resonant vertical cavity optoelectronic semiconductor device,
comprising: an epitaxially grown distributed bragg reflector bottom
mirror; a first layer of N+ type GaAs deposited on said epitaxial
mirror; a layer of N+ type aluminum gallim arsenide disposed on
said layer of GaAs; a layer of P type aluminum gallim arsenide
disposed on said layer of N+ type aluminum gallim arsenide; a PHEMT
(Pseudomorphic High Electron Mobility Transistor) epitaxial layer
structure without a schottky contact and using N+ type modulating
doping, disposed on said layer of P type aluminum gallium arsenide
said PHEMT comprising a layer of aluminum gallium arsenide
(.about.15% Al), a layer of GaAs, one to three quantum wells of
strained InGaAs separated by GaAs barriers, a spacer layer of
aluminum gallium arsenide (.about.15% Al), an N+ modulation doped
layer of aluminum gallium arsenide (.about.15% Al) and a gate
spacer layer of aluminum gallium arsenide (.about.15% Al); a very
thin (.about.80 .ANG.) layer of P+ type heavily doped aluminum
gallium arsenide (.about.15% Al) as a planar doped layer and then a
cladding layer of aluminum gallium arsenide (40%-70%) of modest P
type doping (.about.10.sup.17 cm.sup.-3) disposed on said planar
doped layer; an ohmic contact layer of P++ type doping deposited on
said cladding layer; a first layer of a top dielectric mirror
deposited on said contact layer to a thickness of approximately 1/4
wavelength of a specific designed frequency and etched to a
controlled thickness to form an optical grating with a second order
pitch for diffraction through approximately 90.degree., the angle
of the teeth of said diffraction grating being chosen to optimize
the diffraction in a specific desired output direction and to
minimize the diffraction in the opposite direction and the depth of
the teeth being chosen to maximize the diffraction efficiency;
additional layer of said top dielectric mirror deposited on said
first layer of said top dielectric mirror to form a complete
structure of said Distributed Bragg Reflector (DBR) mirror with
very high reflectivity for a vertically resonant wave such that the
diffracted energy of the grating is substantially greater than the
energy transmitted through the mirror.
2. The device as defined in claim 1, fabricated in the form of a
waveguide device with DBR mirrors performing the function of
waveguide cladding regions wherein the optical energy in the guide
is diffracted into a vertical cavity or is obtained by diffraction
from the vertical cavity, utilizing two refractory metal
.[.emitter.]. .Iadd.gate .Iaddend.electrodes positioned on either
side of said waveguide device the positive species current from
said refractory .[.emitter.]. .Iadd.gate .Iaddend.electrodes being
steered into or out of the core of said device waveguide by N type
implants positioned beneath said electrodes to reduce optical mode
interaction with said electrodes, and utilizing ion implants
self-aligned to said .[.emitter.]. .Iadd.gate .Iaddend.electrodes
to form source .[.or drain.]. electrodes which make electrical
contact with a quantum well channel region thereby providing a
source or a drain for negative species current flow, with each
.[.emitter.]. .Iadd.gate .Iaddend.and self-aligned source .[.or
drain.]. electrode forming a coplanar transmission line.
3. The device as defined in claim 2 wherein the structure of said
device between said epitaxially grown bottom DBR mirror and said
deposited by DBR mirror is a conventional pn semiconductor laser
with either a separate confined heterostructure (SCH) or a graded
index confinement scheme.
4. The device as defined in claim 2, wherein said .[.emitter.].
.Iadd.gate .Iaddend.electrodes are biased positively with respect
to said source electrodes such that stimulated emission establishes
a vertically resonant optical mode which is diffracted
substantially into one direction to obtain an edge emitting
laser.
5. The device as claimed in claim 2, wherein a high speed
electrical signal is introduced onto the transmission line to
obtain a high speed traveling optical pulse in said optical
waveguide such that a travelling wave laser is obtained.
6. The device as defined in claim 2, wherein said waveguide in said
optoelectronic device is coupled to another passive waveguide
within a monolithic integrated circuit, the core of said passive
waveguide being identical to the core of said waveguide within said
optoelectronic device except for the p+ contact layer and shifted
in energy gap with respect to said active core by disordering
techniques such that the passive waveguide has low optical loss but
the interface between said active waveguide and said passive
waveguide has a small index change and therefore low insertion
loss.
7. The device as defined in claim 2, wherein the source electrodes
are biased positively with respect to the .[.emitter.]. .Iadd.gate
.Iaddend.electrodes such that separation of photoelectrons and
photoholes produced in the quantum well(s) by resonant cavity
absorption is achieved and a traveling electrical wave is produced
on the transmission line resulting in a high speed traveling wave
detector.
8. The device as defined in claim 2, wherein it is biased as a
laser above threshold, the optical output of said laser being
delivered to a passive waveguide which is split into several
outputs, said outputs becoming the respective optical inputs to a
second set of lasers, each laser in said second set of lasers being
.[.biassed.]. .Iadd.biased .Iaddend.below its threshold level such
that it amplifies its optical input and the outputs from all said
amplifiers entering into passive waveguides, said passive
waveguides being combined into one single waveguide, and said
single waveguide delivering its power to the edge of the
semiconductor chip to obtain a spatially coherent optical output
with single mode power of high intensity and high brightness due to
the small waveguide cross-section..Iadd.
9. A resonant vertical cavity optoelectronic semiconductor device,
comprising an epitaxially grown bottom mirror; an epitaxially grown
semiconductor laser layer structure located atop said bottom
mirror; and a top dielectric mirror located atop said laser layer
structure, said top dielectric mirror including an optical grating
and at least one mirror layer atop said grating, and said optical
grating defining a plurality of openings having a pitch for
diffracting light generated in said laser layer structure through
approximately 90.degree. such that the light exits said laser layer
structure substantially parallel to said bottom mirror and said top
dielectric mirror..Iaddend..Iadd.
10. A device according to claim 9, wherein: said grating includes a
plurality of angled teeth..Iaddend..Iadd.
11. A device according to claim 10, wherein: said plurality of
angled teeth are angled at about 35.degree...Iaddend..Iadd.
12. A device according to claim 9, wherein: said laser layer
structure is disposed on said bottom mirror and said top dielectric
mirror is disposed on said laser layer
structure..Iaddend..Iadd.
13. A device according to claim 9, wherein: said grating has a
thickness of approximately 1/4 wavelength of a frequency of the
light generated by said laser layer structure..Iaddend..Iadd.
14. A device according to claim 9, wherein: said at least one
mirror layer of said top dielectric mirror constituting a first
distributed bragg reflector mirror, and said bottom mirror
constituting a second distributed bragg mirror..Iaddend..Iadd.
15. A device according to claim 14, wherein: said first and second
distributed bragg mirrors have a very high
reflectivity..Iaddend..Iadd.
16. A device according to claim 9, wherein: said laser layer
structure comprises an inversion channel laser..Iaddend..Iadd.
17. A device according to claim 16, wherein: said inversion channel
laser includes a first AlGaAs layer of a first semiconductor type,
at least one quantum well having a layer of not intentionally doped
GaAs and a layer of InGaAs, a second AlGaAs layer of a second
semiconductor type, and a third AlGaAs layer of said first
semiconductor type..Iaddend..Iadd.
18. A device according to claim 17, wherein: said second AlGaAs
layer is a modulation doped layer, and said third AlGaAs layer is
separated from said modulation doped layer by a not intentionally
doped fourth AlGaAs capacitance layer..Iaddend..Iadd.
19. A device according to claim 17 fabricated in the form of a
waveguide device with said bottom and top mirrors performing the
function of waveguide cladding regions and said laser layer
structure forming a vertical cavity, said device further including
waveguide implants of said second semiconductor type positioned
within said laser layer structure and defining a waveguide width,
two refractory metal gate electrodes positioned outside said
waveguide width, and ion implants self-aligned to said gate
electrodes to form source electrodes which make electrical contact
with said at least one quantum well, with each gate and
self-aligned source electrode forming a substantially coplanar
transmission line..Iaddend..Iadd.
20. A device according to claim 19 wherein: said gate electrodes
are biased positively with respect to said source
electrodes..Iaddend..Iadd.
21. A device according to claim 19 wherein: a high speed electrical
signal is introduced onto said transmission line to obtain a high
speed traveling optical pulse in said waveguide
device..Iaddend..Iadd.
22. A device according to claim 19, wherein: said source electrodes
are biased positively with respect to said gate electrodes such
that light introduced into said vertical cavity produces a
traveling electrical wave on said transmission
line..Iaddend..Iadd.
23. A device according to claim 16, wherein: said inversion channel
laser includes, a first layer of GaAs of a first semiconductor type
deposited on said bottom mirror, a first layer of AlGaAs of said
first semiconductor type deposited on said first layer of GaAs, a
first layer of not intentionally doped (NID) AlGaAs atop said layer
of AlGaAs, at least one quantum well atop said NID AlGaAs, each
quantum well having a layer of NID GaAs and a layer of InGaAs, a
second layer of NID AlGaAs deposited on said at least one quantum
well, a layer of AlGaAs of a second semiconductor type deposited on
said second layer of NID AlGaAs, a third layer of NID AlGaAS
deposited on said layer of AlGaAs of said second semiconductor
type, a second layer of AlGaAs of said first semiconductor type
deposited on said third layer of NID AlGaAs, and a second layer of
GaAs of said first semiconductor type atop said second layer of
AlGaAs of said first semiconductor type atop said second layer of
AlGaAs of said first semiconductor type..Iaddend..Iadd.
24. A device according to claim 23, wherein: said first
semiconductor type is p-type and said second semiconductor type is
n-type..Iaddend..Iadd.
25. A device according to claim 24, wherein: said first and second
layers of GaAs are doped p+..Iaddend..Iadd.
26. A device according to claim 25, wherein: said first and second
layers of AlGaAs of said first semiconductor type each comprise a
first sublayer of doped p+ AlGaAs and a second sublayer of p
AlGaAs..Iaddend..Iadd.
27. A device according to claim 26, wherein: said second sublayer
of p AlGaAs has of said first layer of AlGaAs has a first aluminum
content and a first gallium content, and said first layer of not
intentionally doped (NID) AlGaAs has a second aluminum content
smaller than said first aluminum content and a second gallium
content larger than said first gallium content..Iaddend..Iadd.
28. A device according to claim 26, wherein: said first and second
layers NID AlGaAs have a first aluminum content and a first gallium
content, and said layer of AlGaAs of said first semiconductor type
and said layer of AlGaAs of said second semiconductor type each
have a second aluminum content larger than said first aluminum
content and a second gallium content smaller than said first
gallium content..Iaddend..Iadd.
29. A device according to claim 25, fabricated in the form of an
active waveguide device with said bottom and top mirrors performing
the function of waveguide cladding regions and said laser layer
structure forming a vertical cavity, said device further including
waveguide implants of said second semiconductor type positioned
within said laser layer structure and defining a waveguide width,
two refractory metal gate electrodes positioned outside said
waveguide width, and ion implants self-aligned to said gate
electrodes to form source electrodes which make electrical contact
with said at least one quantum well, with each gate and
self-aligned source electrode forming a substantially coplanar
transmission line, said device further comprising a passive
waveguide within a monolithic integrated circuit, said passive
waveguide having a core identical to the core of said active
waveguide device except said core of said passive waveguide not
having a second p+ doped GaAs layer, and said core of said passive
second waveguide being shifted in energy gap with respect to said
core of said active waveguide device such that said passive
waveguide has low optical loss but the interface between said
active waveguide and said passive waveguide has a small index
change and therefore low insertion loss..Iaddend..Iadd.
30. A device according to claim 9, wherein: said laser layer
structure comprises a pn laser..Iaddend..Iadd.
31. A device according to claim 30, wherein: said pn laser includes
a layer of a first semiconductor type of at least one of GaAs and
AlGaAs, at least one quantum well having a layer of not
intentionally doped GaAs and a layer of InGaAs, and a layer of a
second semiconductor type of at least one of GaAs and
AlGaAs..Iaddend..Iadd.
32. A device according to claim 31, wherein: said layer of a first
semiconductor type of at least one of GaAs and AlGaAs includes a
first layer of GaAs of said first semiconductor type deposited on
said bottom mirror and a first layer of AlGaAs of said first
semiconductor type deposited on said first layer of
GaAs..Iaddend..Iadd.
33. A device according to claim 30, wherein: said pn laser includes
a layer of GaAs of a first semiconductor type deposited on said
bottom mirror, a layer of AlGaAs of said first semiconductor type
deposited on said first layer of GaAs, a first layer of not
intentionally doped (NIDL) AlGaAs atop said layer of AlGaAs of said
first semiconductor type, at least one quantum well atop said NID
AlGaAs, each quantum well having a layer of NID GaAs and a layer of
InGaAs, a second layer of NID AlGaAs deposited on said at least one
quantum well, a layer of AlGaAs of a second semiconductor type
deposited on said second layer of NID AlGaAs, a layer of GaAs of
said second semiconductor type atop said layer of AlGaAs of said
second semiconductor type..Iaddend..Iadd.
34. A device according to claim 33, wherein: said first
semiconductor type is n-type and said second semiconductor type is
p-type..Iaddend..Iadd.
35. A device according to claim 34, wherein: said layer of GaAs of
said first semiconductor type is doped N+, and said layer of GaAs
of said second semiconductor type is doped P+..Iaddend..Iadd.
36. A resonant vertical cavity optoelectronic semiconductor device,
comprising: an epitaxially grown bottom mirror; a top dielectric
mirror substantially parallel to said bottom mirror; and an
epitaxially grown semiconductor laser layer structure located
between said bottom mirror and said top mirror, said laser layer
structure generating light in a first direction substantially
perpendicular to said bottom mirror and said top dielectric mirror
and directing said light out of said laser layer structure in a
second direction substantially parallel to said bottom mirror and
said top dielectric mirror..Iaddend..Iadd.
37. A resonant vertical cavity optoelectronic semiconductor device,
comprising: an epitaxially grown bottom mirror; top dielectric
mirror substantially parallel to said bottom mirror; and an
epitaxially grown semiconductor laser layer structure located
between said bottom mirror and said top mirror, said device
fabricated in the form of a waveguide device with said bottom and
top mirrors performing the function of waveguide cladding regions
and said laser layer structure forming a vertical cavity, said
device further including gate electrodes and source electrodes
together forming a transmission line, wherein light traveling in
said laser layer structure and a corresponding electrical signal
traveling on said transmission line have substantially matched
velocities..Iaddend..Iadd.
38. A device according to claim 37, wherein: said electrical signal
causes said laser layer structure to generate said light traveling
in said laser layer structure..Iaddend..Iadd.
39. A device according to claim 37, wherein: said light traveling
in said laser layer structure generates said electrical
signal..Iaddend..Iadd.
40. A device according to claim 37, wherein: said laser layer
structure includes at least one quantum well, and said gate
electrodes are positioned on either side of said waveguide device,
implants of a first semiconductor type are positioned beneath said
electrodes, and ion implants are self-aligned to said gate
electrodes to form said source electrodes which make electrical
contact with said at least one quantum well, with each gate and
self-aligned source electrode forming said transmission line which
is substantially coplanar..Iaddend.
Description
TECHNICAL FIELD OF THE INVENTION
This invention relates to the field of semiconductor double
heterostructure laser devices and, in particular, to those laser
devices which use vertical cavities. It also relates to the field
of corrugated optical waveguides and travelling wave optoelectronic
devices.
BACKGROUND OF INVENTION
Next generation transmission systems are anticipating bit rates
approaching 100 Gb/s in time division multiplexed architectures.
The demand for such speeds is created by the growth of interactive
multi-media services and is made possible by the terahertz
bandwidth of optical fiber. Realizing optical sources with those
modulation bandwidths remains a significant obstacle however. The
state-of-the-art edge-emitting semiconductor lasers have 3 db
bandwidths in the region of 30 GHz. The limitations on this
bandwidth arise from the non-linear gain mechanism and from the
maximum values of differential gain that can be realized. The
non-linear gain effect is due to the presence of current transport
in the SCH(separate confinement heterostructure) regions and the
associated dynamic response. The SCH regions perform the functions
of both carrier confinement and optical confinement. For the
purposes of carrier confinement, these regions can be reduced
substantially. However, in the edge emitter these regions cannot be
reduced to much less than about 1500 .ANG. in thickness and yet
still maintain a reasonable value for I', the optical confinement
factor for the quantum well in the optical waveguide. Also, as the
low index waveguide regions are placed closer to the quantum well,
the large index difference interfaces produce larger waveguide
loss.
The differential gain is established by the differential stimulated
lifetime which is essentially equal to (or slightly less) than the
photon lifetime given by ##EQU1##
where the parameters are R, the reflectivity of the cleaved facets
and L, the length of the laser. The laser bandwidth varies
inversely with .tau..sub.p. To increase speed either L or R must be
reduced. With the semiconductor to air reflectivity fixed at about
0.3, the laser length cannot be reduced below about 200 .mu.m (by
cleaving or by using dry etched mirrors). This limit is imposed by
the rapidly rising threshold current and the reduced power
capability. The output power is limited by the total device volume
which is being reduced with the length. This tradeoff between speed
and power with reduced length (constant power.times.bandwidth
product) is common to all devices.
The vertical cavity laser has emerged as an alternative to the edge
emitting laser because it allows a different mode of operation. In
this case the mirror reflectivity is increased very close to unity
and the cavity length is reduced to 1-3 wavelengths. Therefore the
mirror loss term in the photon lifetime, i.e. In (1/R)/L may be
designed to be essentially the same as in the edge emitter. The
term .alpha. representing optical loss is no longer limited by
waveguide loss as in the edge emitter but rather by scattering in
the mirrors and at the edges of the vertical cavity. Therefore the
widths of the SCH layers in the vertical cavity growth are no
longer important for determining .alpha. and can be reduced for the
purposes of reducing the non-linear gain effect and therefore of
increasing the bandwidth. Also, reducing the thickness of the SCH
layers does not compromise I' the optical confinement factor as it
does in the edge emitter since I' is now determined only by the
volume ratio of active layer to cavity size and position of active
layer with respect to the standing wave and not by the waveguide
parameters. Therefore the vertical cavity device can be optimized
to reduce the "non-linear gain" effect and the mirror can be
flexibly designed to trade-off the number of reflector pairs for a
lower .tau..sub.p. Lower .tau..sub.p implies lower differential
stimulated lifetime (.tau..sub.st *) and therefore larger bandwidth
due to the increase in differential gain at the expense of a larger
threshold current. The larger threshold, of course, results in
lower maximum power due to the reduced current range for optical
output and the increase in internal device heating.
In spite of the potential for high speed offered by the vertical
cavity devices, the maximum reported bandwidths have been about 15
GHz. The limiting factor in these advanced structures has been the
RC time constant of the device. In the edge-emitting laser, this
bandwidth limitation results from the device parasitic capacitance
(bond pad plus intrinsic PIN capacitance) and the output resistance
of the measurement system because the device series resistance can
be made very small. In the vertical cavity device, the device
series resistance cannot be made negligibly small because the
conduction is either forced through part of a DBR mirror or suffers
from current crowding effects. Current crowding results because the
current must flow two dimensionally from an adjacent region into
the optically active area. The two dimensional flow is required
since the current flow and optical emission are necessarily along
the same axis.
Vertical cavity devices also have an output which is randomly
polarized. It would be very useful to have a means to predetermine
and maintain the polarization. Another impediment to vertical
cavity deployment is the coupling of the light to fibers. Current
methods use polymer waveguides or mirrors to redirect the light
from the vertical to the horizontal direction. This is not a cost
effective approach.
Another requirement of a very high speed laser is integration with
driving electronics. At speeds of 100 GHz, hybrid connections of
lasers and transistors become costly and impractical. A cost
effective solution requires integrated devices. Therefore solutions
to achieve 100 GHz laser operation to be successful practically
will be part of an integrated optoelectronic technology.
The limitations of the laser in terms of matching impedances
between the optoelectronic device and the electronic interface are
the same for a laser or for a detector. Therefore the solutions to
eliminating undesirable reflections for the laser may also be used
for a detector.
It is an object of this invention to provide vertical cavity
operation of a laser which is implemented with the geometry of an
edge emitter and so is capable of output powers proportional to the
total volume of the laser cavity which can be very large, without
sacrificing bandwidth.
It is an object of this invention to provide a vertical cavity
laser in which the speed is not limited by the input impedance of
the laser. Therefore, the goal of the invention is to introduce a
traveling wave concept for both a laser and a detector which can
eliminate the reflections produced at mismatched interfaces.
It is an object of this invention to provide a very high brightness
source by concentrating all the power from a large volume optical
cavity through a small output cross-sectional area.
It is an object of this invention to provide a predictable and
stable polarization for the output of a vertical cavity laser.
It is an object of this invention to eliminate the effect of back
reflections from fiber or waveguide interfaces upon the stability
of the laser output. This is the function of an optical
isolator.
It is an object of this invention to optimize and facilitate the
coupling from a vertical cavity laser to a fiber by converting the
vertical cavity power to waveguide power where the waveguide
construction and parameters provide for a large misalignment
tolerance.
It is a final object of this invention to provide the edge emitting
output of a vertical cavity laser in the format of a optoelectronic
integrated circuit so that the functionality of electronic and
optoelectronic devices is merged.
SUMMARY OF THE INVENTION
A semiconductor laser or detector has been invented which is a
vertical cavity device constructed with a dual dielectric top
Distributed Bragg Reflector (DBR) mirror wherein a diffraction
grating in the second order is incorporated into the dielectric
layer which is the first layer to be deposited upon the vertical
cavity. The function of the grating is to change the direction of
propagation of the light from vertical to horizontal so that the
output of the vertical resonant cavity is a mode in a waveguide. In
general, as a laser it is desired to launch optical power primarily
in one direction so that an asymmetry or blaze angle will be
incorporated into the grating. Therefore, the principle of
operation is based on the diffraction of light produced by the
vertical cavity laser into an optical mode which propagates in the
guide. The polarization of the light is dictated by the
polarization in the guide which itself is TE in general because of
the high diffraction efficiency for TE light. The light propagating
in the guide also diffracts into the vertical cavity and reinforces
the polarization of the vertical cavity emission through the
process of stimulated emission. The device is designed so that the
vertical emission is essentially inhibited and the device output is
totally diffracted waveguide output and therefore the power output
can be increased by simply extending the laser in length within the
constraint of chip size. The grating structure may be applied to
realize modulators, detectors and amplifiers in addition to
lasers.
The device is described in one illustrative embodiment of the HFET
inversion channel laser, which comprises one of the laser devices
in the general family of inversion channel optoelectronic devices
which are modulation doped devices. In this form of the invention,
a refractory metal emitter provides a conduction path of hole flow
into the laser active region by two-dimensional conduction. The two
dimensional contour of the conduction with path is established by
an N type implant under the metal emitter. The refractory metal
emitter is constituted of two metal stripes one positioned on
either side of an optical waveguide which utilizes the upper DBR
mirror of the vertical cavity to provide its cladding. Separation
of the refractory metal contact into two stripes enables a
waveguide to transport the light diffracted into the channel from
the vertical cavity laser mechanism by the action of the grating
without losses from optical scattering at the metal. The device is
a laterally injected laser and thus ion-implanted source contacts
provide electron flow to the active laser channel, i.e. the
inversion channel. The source contact metals stripes and the
emitter metal strips form the electrodes for a coplanar
transmission line. The device is designed for equal electrical and
optical velocities.
It will be understood that while an important application of the
grating coupling is in the laser device, the structure can also be
employed in other optoelectronic devices such as modulators,
detectors and amplifiers. For example by the reversal of the
electrode potentials, the performance of a grating coupled detector
is obtained.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic view through the center of the grating
control laser waveguide and parallel to the direction of
propagation of the optical mode in the waveguide. The grating is
blazed in the direction of propagation which is from left to right.
The vertical cavity oscillation is shown and also the growth of the
waveguide mode.
FIG. 1.5 is a schematic view of the layer structure of the pn laser
which may be inserted between the mirrors of the grating control
laser in FIG. 1.
FIG. 2 is a cross-sectional view of the grating coupled laser
implemented as the HFET Inversion Channel Laser at right angles to
the waveguide. The optical mode 150 is confined by the N type
implants 111 and 112 such that there is little loss by scattering
from the metal emitter gate/emitter. The gate/emitters 110, 109
provides holes and the sources 114, 115 provides electrons.
FIG. 3 is a schematic of the traveling wave three dimensional
cross-section of the grating coupled HFET laser, detector,
modulator or amplifier. The inversion channel technology is shown
as the means of isolating the device and establishing contact to
the source and gate electrodes. The source and gate electrodes
establish a copolanar transmission line which is shown terminated
in the characteristic impedance to obtain high speed.
FIG. 4 shows the diffraction efficiency versus grating angle in the
vertical cavity waveguide.
FIG. 5 shows the calculated waveguide photon density versus device
length for the grating coupled traveling wave laser with the
parameters as shown, F.sub.cav is the vertically propagating photon
density and F.sub.g is the laterally propagating photon
density.
FIG. 6 is a schematic of a top view of an integrated circuit chip
which uses a single GCVCSEL as a master laser and several GC
amplifiers with on-chip waveguide connections to create a very
large single spatial mode and coherent output power.
FIG. 7 shows the effect of the velocity matching on the optical
response of the laser.
FIG. 8 shows and compares the different current flow patterns in
the HFET detector and the HFET laser.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
FIGS. 1,2,3 shows the layers of a structure in accordance with a
preferred embodiment and from which all the devices of the
invention can be made. The semiconductor layer structure and
fabrication are in accordance with the Inversion Channel Technology
and have been described in detail in application Ser. No.
60/028,576. A vertical cavity laser is constructed comprised of: a
lower DBR mirror 106 consisting typically of alternating layers 108
of GaAs and 109 of AlAs which itself will be oxidized during the
fabrication to form layers 109 of Al.sub.x O.sub.y, a active laser
cavity 107 consisting of the standard SCH (separate confinement
heterostructure) semiconductor laser structure containing say 3
quantum wells 120 which may be the laser structure of the inversion
channel laser as discussed here or the conventional pn laser
structure, a top DBR mirror consisting of alternating layers 101,
102, 103, and 104 of two deposited dielectrics. For the inversion
channel laser this structure consists of a layer 140 of P+ GaAs
deposited on the lower DBR mirror, a layer 141 of P+ type AlGaAs
(>40%) disposed on the P+ type GaAs layer; a layer 142 of P type
of AlGaAs disposed on the P+ type AlGaAs layer, a PHEMT
(Pseudomorphic High Electron Mobility Transistor) disposed on the P
type AlGaAs layer, the PHEMT consisting of the sequence of layers
marked in FIG. 2 and comprising a not intentionally doped (NID)
AlGaAS layer 143 (.about.15% Al), a NID GaAs spacer layer 144, once
to three NID quantum wells 145 of strained InGaAs separated by NID
GaAs barriers 146 and collectively labeled 120, a NID AlGaAs spacer
layer 147 (.about.15% Al), an AlGaAs N+ type planar doped (very
thin) layer 148 (.about.15% Al) which is typically referred to in
the art as a modulation doped layer, and a NID AlGaAs gate
capacitance layer 149 (.about.15% Al); a planar doped (very thin)
P+ layer .[.150.]. .Iadd.151 .Iaddend.of AlGaAs (.about.15% Al)
disposed on the PHEMT structure; a P doped AlGaAs cladding or
current blocking layer .[.151.]. .Iadd.152 .Iaddend.disposed on the
P+ planar doped layer; and a very thin layer .[.152.]. .Iadd.153
.Iaddend.of about 100 A of heavily doped P+ GaAs to enable the
formation of an ohmic contact without significant absorption of an
optical wave propagating through it. For the pn laser the structure
consists of a layer 160 of N+ GaAs deposited on the lower DBR
mirror, a layer 161 of N+ doped AlGaAs (>40%) cladding, .[.a
layer 162 of ND GaAs,.]. a layer .[.163.]. .Iadd.162 .Iaddend.of
NID AlGaAs (confinement region) with .about.15% Al, .Iadd.a layer
163 of NID GaAs, .Iaddend.a series of ND InGaAs quantum wells 164
separated by ND GaAs barriers 165, a layer 166 of ND AlGaAs
(confinement region) with .about.15% Al, a layer 167 of P type
doped AlGaAs (>40%) cladding and a very thin layer 168 of P+
type doped GaAs to serve as a top contact layer. In FIG. 1 the
grating 101 is formed in the first layer of the mirror stack
comprised of layers 101, 102, 103 and 104. It is a blazed grating
which diffracts light preferentially in one direction as shown by
the arrows indicating the direction of light propagation. The DBR
mirror layers 102, 103 and 104 of the vertical cavity device are
deposited on top of the cavity .[.105.]. .Iadd.107 .Iaddend.and
grating layer 101, and the bottom mirror 106 is formed under the
cavity 107 during the growth. This device is designated the Grating
Coupled Vertical Cavity Surface Emitting Laser (GC VCSEL). The
device cross-section at right angles to the guide is shown in FIG.
2 and all the regions in FIG. 1 are identified here as well.
However the blaze of the grating cannot be seen in this view. The
laser is constructed in the form of a waveguide as shown in FIG. 3,
wherein the refractory metal gate contacts which supply positive
charge to the active region are separated into two stripes 109 and
110 and set back from the center of the guide to allow low loss
propagation of the mode. The current is guided electrically into
the active wells 113 by the N type implants 111 and 112. This
guiding action describes the two dimensional current flow indicated
by the large arrows in FIG. 2. These implants simultaneously
provide the optical guiding function to maintain the optical mode
in the center of the guide. The gate contacts become the masking
feature which are used to define the ion implants 114 and 115,
which are sources used to supply positive charge to region 113. N
type gold alloy stripes are formed on implanted regions 114 and 115
to form a coplanar transmission line together with gates 110 and
109. The device is isolated potentially by oxygen implantation 130
beneath regions 114 and 115 and formed with the same mask and also
by the formation of Al.sub.x O.sub.y which penetrates from the side
in regions 116 and 117 at the same time that the mirror layers 106
are formed beneath the device. The characteristic impedances
Z.sub.o are of the transmission line are shown as terminations for
high speed operation. For detector operation these are on the
output of the device but for laser operation these are on the input
to the device.
To understand the operation of the GC VCSEL consider the VCSEL
operation at the back end of the device (x=0 in FIG. 1). The front
end at x=L is the output port where light is to be emitted. The
current is applied uniformly along the length of the device. When
current is applied, light is generated vertically in the VCSEL at
x=0. Consider the optical wave in the cavity as it passes through
the grating. A small fraction is diffracted to the left. Due to the
asymmetry of the blaze a much .[.smaller.]. .Iadd.larger
.Iaddend.fraction is diffracted to the right (this is illustrated
by the relative sizes of the arrows in FIG. 1). Now if the grating
were of zero thickness, then the remainder of the light, which is
most of the energy, would pass through the grating be reflected
back and pass through the grating in the reverse direction. Due to
the reversibility of the diffraction process, the majority of this
light would be diffracted in the reverse direction with the net
result that the light would be coupled fairly equally in both
directions. However, the grating has a finite thickness and in
addition the penetration of the light into the mirror is small for
a high reflectivity mirror. Thus the intensity of the light
traveling downward into the laser after reflection from the mirror
decreases dramatically with penetration into the mirror. It follows
then that the amplitude of the light incident on the grating from
within the cavity is substantially greater than the amplitude of
the light incident on the grating by reflection from the mirror.
Therefore the fraction of light diffracted to the right is
substantially .[.less.]. .Iadd.greater .Iaddend.than the fraction
of light diffracted to the left. The design criterion that is
followed is that the thickness of the diffraction grating should be
approximately equal to the penetration depth of the mirror (this is
also determined by the standing wave effects in the grating which
are found from the diffraction analysis). This situation is the one
that will be implemented in practice because for high reflectivity
mirror, the decay of intensity to about 10% occurs within the first
1/4 wavelength of the mirror stack and additionally, it is most
practical to form the grating by etching through approximately the
first layer of he mirror stack. In the fabrication sequence, the
dielectrics chosen to form the mirrors are SiO.sub.2 and undoped
sputtered GaAs. This choice is dictated by the very large index
difference which reduces the number of required pairs and the fact
that our mirror must be deposited during the device processing.
Given these layer components we have two choices to implement the
grating 1)deposit a layer of GaAs and then pattern and etch this
layer followed by a 1/4 wave of SiO.sub.2 and then GaAs etc.
2)deposit a 1/4 wave layer of SiO.sub.2, pattern and etch this
layer and then deposit a 1/4 wave of GaAs and then SiO.sub.2 and
then GaAs etc. The second of these is preferable. The choice of 1/4
wave thickness is also supported by the grating efficiency and its
dependence on the index difference between the layers of the stack
as discussed below on grating efficiencies. In FIG. 1, the relative
sizes of the arrows indicate that the majority of the light is
diffracted to the right.
DETERMINATION OF DIFFRACTION EFFICIENCIES IN THE GRATING COUPLED
VERTICAL CAVITY LASER
The quantitative prediction of diffracted power has been a subject
of much study over the years primarily because of its importance to
the operation of the DFB laser. In these cases the gratings are
usually designed to be first order since it is the first order
forward and backward traveling waves which form the basis of
coupled mode theory. There are some instances where second order
has been used in the DFB to produce an optical loss mechanism in an
effort to stabilize the mode position as described by Kazarinov and
Henry (however the laser output is still via the first order wave).
More generally the second order grating has been used as the output
reflector for DBR lasers in order to obtain vertical emission.
Since the second order grating when implemented as a waveguide
corrugation produces both first order diffraction in the guide and
second order diffraction normal to the guide then it can be used in
the DBR to provide both reflection for the guided wave and output
coupling of the laser light.
All of the existing work on corrugated waveguides describes the
diffraction in a general way which includes all possible
diffraction orders with a separate equation for each order. The
results are complicated, difficult to understand and require a full
numerical analysis to obtain the quantitative predictions required
for this work. For the GCVCSEL a simpler model is required. For the
perfect second order case, the equations can be simplified and only
one differential equation needs to be solved for a symmetrical
grating. With this approach a simple predictor for diffraction
efficiency results for both exact or approximate second order
gratings (the approximate second order grating is one in which the
grating pitch is either slightly smaller or larger than the extract
value). The basis for the model is a three layer waveguide
characterized by indices n.sub.1, n.sub.2, and n.sub.3 in the
regions above the guide, in the guide and below the guide. This
analysis applies to diffraction from the guide to the direction
normal to the guide.
All of the published work on waveguide diffraction has been for the
process of diffraction of the guided wave into an unguided (leaky)
wave propagating away from the guide. For the GC VCSEL the reverse
process is required and the efficiency of the process is not
necessarily the same in spite of the fact that optical propagation
of energy through a passive structure should be reversible. This is
because of the transmission of energy straight through the guide
which is not present in the out-of-guide case. The same basic
mathematical approach is applied to the three layer waveguide with
a blazed grating. A typical result in FIG. 4 shows the diffraction
efficiency out of the guide for a corrugated waveguide as the blaze
angle is varied. It shows the optimum angle for typical index
parameters .[.(n.sub.1 =n.sub.3 =3.4 and n.sub.2 =3.6).].
.Iadd.(n.sub.1.ident.n.sub.3.ident.3.0 and n.sub.2.ident.3.5)
.Iaddend.is .[.about 41.degree. .]. .Iadd.between about 36.degree.
and 46.degree. or between -36.degree. and -46.degree., .Iaddend.and
the ratio of the diffraction in the two directions is about
135.
In the GCVSEL the waveguide cladding is formed by the bragg mirrors
and thus the structure forms a multilayer waveguide with very
complicated propagation coefficients. In order to apply the
diffraction calculation, it is necessary to represent the VCSEL
waveguide by an equivalent three layer guide and so it is necessary
to represent the top (bottom) stack and its interface to air
(substrate) by an infinite region with a single index. Since the
material between the mirrors can be represented by a single index
determined as the average over its layers, then the result will be
a three layer waveguide. The wave propagating in a vertical cavity
laser is characterized by a penetration depth. This is normally
used to determine the effective cavity length of the VCSEL as
where L.sub.pb and L.sub.ps are the penetration depths of the
bottom and top mirrors respectively which have been derived as
##EQU2##
where L.sub.Mt,b is the total front and back mirror thicknesses,
and .kappa. is the coupling constant which is given by
approximately
Here, .DELTA.n is the index difference between the two layers in a
pair of the mirror. In the standard description of the three layer
waveguide, the TE mode is normally described by a function within
the guide (asymmetric or symmetric) and by evanescent decay into
the cladding on either side of the guide. The evanescent decay away
from the guide, is determined by the refractive index in the
region. To predict the behavior of the vertical cavity guide we
assume that the penetration depth(s) of the vertical cavity
mirror(s) correspond to the evanescent decay of a wave if it were
propagating in the waveguide formed by the vertical cavity as the
core of the guide, and the top and bottom mirrors as the claddings.
Therefore, by using L.sub.pt,b we can determine the effective index
of the top and bottom mirror regions from the point of view of a
three layer waveguide. Using these indices we can then use the
model developed for the waveguide diffraction into a three layer
waveguide to determine the efficiency of the second order
diffraction from the vertically propagating light to the guide
wave.
In the preferred embodiment, the mirror paris on the top are
SiO.sub.2 and GaAs corresponding to indices of 1.5 and 3.6. The
bottom mirror is comprised of Al.sub.x O.sub.y and GaAs
corresponding to indices of 1.6 and 3.6. The typical design will be
7 pairs on the bottom and 4-7 pairs on the top. Using these
parameters we determine.
and therefore an effective index above the care of
Similar calculations for the lower mirror yield n.sub.3cf =3.05.
Then the diffraction efficiency is determined from the model by a
three layer waveguide with indices of n.sub.1 =2.96, n.sub.2 =3.48
and n.sub.3 =3.05. The index of the core region (n.sub.2), which is
the vertical cavity itself, is determined by using a transmission
matrix calculation for a slab waveguide. In FIG. 4, we plot the
efficiency of the diffraction process for a parallelogramic grating
in the VCSEL waveguide and the results show that we can expect an
efficiency of .[.3.5.times.10.sup.-4 .]. .Iadd.1.5.times.10.sup.-3
.Iaddend.for a blaze angle of 45.degree. and a grating etch depth
of about 0.15 .mu.m. The simulation shows a maximum efficiency at
an angle of 45.degree.. Such large blaze angles may be difficult to
achieve with ion beam etching and also, for a depth of 0.15 .mu.m
the bottom of the parallelogram may penetrate back to undercut the
top of the parallelogram which is not desirable. We thus choose an
angle of about 35.degree. which provides a value of diffraction
efficiency of about 0.00178.
DETAILED DC OPERATION OF THE GCVCSEL
From the above description one can see that the light generated in
the vertical cavity at z=0 will be diffracted to the right
continuously. The diffracted light propagates in the form of a
guided wave. The guided wave will itself be diffracted back into
the cavity at each position z and will be amplified. The
amplification will continue until the gain is saturated. From the
point outwards, the saturated vertical cavity output will continue
to add to the waveguide power resulting in a maximum waveguide
output power at the device end, z=L.
Consider the photon density at nay position z in the cavity of
thickness dz where the laser is above threshold. We have
##EQU3##
where L.sub.x is the quantum well width, .eta..sub.c is the
electrical confinement factor, J and J.sub.TH are the current and
current density and .tau..sub.p ' is the effective photon lifetime
for the vertical cavity device given by ##EQU4##
where .alpha..sub.vc is the vertical cavity loss due to the
diffraction grating. There will also be components of
.alpha..sub.vc which are due to free carrier absorption and
parasitic diffraction but these will be ignored for the moment to
focus on the desired effect. In the final formula we may simply
replace ln(1/R) by L.sub.cav *.alpha..sub.par to determine its
effect since in all likelihood this term will dominate ln(1/R).
The power output from the laser is comprised of two components
which are written as
where t.sub.f is the power transmissivity of the output port. For
the conventional transmission through the mirror (1) is substituted
into (3) with t.sub.f =ln(1/R) to give the power increment
##EQU5##
There is another power component which is the power diffracted into
the guide. The transmissivity for this mechanism is the diffraction
efficiency t.sub.f =.eta..sub.diff so we have ##EQU6##
To determine .alpha..sub.vc we note that the primary optical loss
in the vertical cavity by design will be the second order
diffraction by the grating of the vertically propagating wave. In
the development of diffraction into the guide using the above model
from a normally propagating wave we have determined the diffraction
efficiency .eta..sub.diff as ##EQU7##
where .eta..sub.1 and .eta..sub.2 are the impedances of the guide
and the incident medium (which in this case are the same), A.sub.y
is the field intensity at the edge of the guide of the z
propagating wave and C.sub.o is the field intensity of the incident
wave. Thus we can say that the power diffracted into the guide from
the incident wave is .eta..sub.diff C.sub.o C.sub.o *. However we
can also regard the grating as a loss in the x direction for the
wave C.sub.o and we can define a loss parameter .alpha..sub.x by
the statement.
C.sub.o C.sub.o *(1-e.sup.-.alpha..sub..sub.x
.sup.x)=.eta..sub.diff C.sub.o C.sub.o * (7)
so that for a grating thickness of x=t we have
Since this loss occurs only over the grating thickness then we
multiply by confinement factor .GAMMA.=t/L.sub.cav to obtain an
effective value for the total cavity of
for use in (5) and (2). Therefore the waveguide power is
##EQU8##
Now the design of the laser should be that .alpha..sub.vc is the
dominant loss in the cavity and that negligible power escapes
through the two mirrors which may be stated, by using (9) in (4),
as
From (5) it is seen that the power output is just the total output
of the vertical cavity device with the efficiency of the
diffraction as opposed to mirror transmission and is a linear
function of the length of the laser. As the wave propagates in the
guide, there is also diffraction of power into the guide. Basically
this power diffracts from the wave into the cavity and then back
into the guide with the same efficiency as the cavity flux.
However, this photon flux can amplify the cavity flux through an
adjustment of F.sub.cav and therefore of (10). In general, the
amplification of waveguide power depends on the relative size of
the mirror and diffractive loss. If the diffractive loss is very
large, then the light realizes single pass gain, i.e. it passes
through the cavity essentially once before it is diffracted back
into the wave. This is equivalent to the linear optical amplifier
with very low reflectivity in which case the majority of the light
passes through the amplifier only once as a travelling wave. In
these cases the amplifier always works below the threshold of the
laser. If the diffractive losses are not too high, then the light
may make many oscillations in the cavity before diffraction back
into the guide and this situation is referred to as the multipass
gain case. In this case, the laser is above threshold along most,
if not all of the length of the laser. To obtain laser output, this
is a situation we are interested in here. For this kind of
operation (as we describe elsewhere) the threshold current of the
laser is modified. We can therefore write an equation for the guide
power which is ##EQU9##
where in this case (6) is modified to ##EQU10##
and the threshold current has now become a function of the flux
injected into the cavity. The determination of the function
J.sub.th (.alpha.F.sub.s /F.sub.cav) requires a modification of the
photon rate equation from ##EQU11##
The equation on the .[.right.]. .Iadd.left .Iaddend.is the
conventional photon loss equation where the right hand side
represents photon loss from the system. The equation on the
.[.right.]. .Iadd.left .Iaddend.is the photon loss equation when an
optical input is fed to the device. It is clear that the input
photon term reduces the loss and therefore reduces the condition
for threshold and therefore the threshold current. Specifically,
the K parameter which is used to determine threshold, contains
.tau.'.sub.p and from (14), the photon lifetime is modified to
i.e., the effective photon lifetime in the cavity increases with
the input signal but decreases with the cavity flux itself.
The power output of the laser is determined by integration of (12)
and is shown as a function of laser length L in FIG. 5. If the
effect of optical gain in the cavity were absent so that J.sub.TH
in (12) is a constant then the solution to (12) is ##EQU12##
which is equivalent to the output of a vertical cavity device with
a width of W, a length of L=1/.alpha..sub.g and an efficiency of
.eta.=.eta..sub.diff.eta..sub.e /{ln(1/R)+L.sub.cav
*.alpha..sub.par). Equivalently, we could say the efficiency was
.eta..sub.e and the effective length was .eta..sub.diff
/.alpha..sub.g {ln (1/R)+L.sub.cav *.alpha..sub.par). In the
figure, the parameters are taken from a typical grating efficiency
analysis and the parameters of .eta..sub.diff =5e-4 and
.alpha..sub.g =50 are used with a cavity designed for R=0.9999.
Then the effective length is 330 um. Alternatively we could regard
the device as having an efficiency of 63% for a length of L=530 um.
Desirable parameters are therefore .eta.=10.sup.-3 and
.alpha..sub.g =which can be achieved with the dielectric
combination SiO.sub.2 /GaAs and a grating etch depth (thickness) of
1000 .ANG.. From our calculations for an asymmetrical grating the
optimum blaze angle is about 30.degree.. With these numbers, the
laser output power for J-J.sub.th =200 A/cm.sup.2 and a waveguide
width of 10 .mu.m is about 0.25 W.
In FIG. 5 we also plot the efficiency of the laser as a function of
z. The interesting feature here is the tradeoff between length and
overall efficiency. For small z=L, the efficiency is close to 100%.
As the length is increased the efficiency drops so that at
L.congruent.2.eta..sub.diff /ln(1/R).alpha..sub.g the efficiency
has dropped to about 50%. This is clearly a design tradeoff in
which the total power and efficiency must be traded off by the
appropriate choice of length.
This device may also be operated as an optical amplifier. As long
as .eta..sub.diff is large enough to prevent lasing, then it may
still be quite small, i.e. it may be easily be around 10.sup.-3.
The gain is obtained because for every increment of propagation
distance in the z direction the wave transverses the vertical
cavity Q times where Q is the quality factor. Since Q=(v.sub.o
/v.sub.F).Fourier. where .Fourier. is the finesse given by
approximately .Fourier.=.pi./ .alpha.t=.pi./.eta..sub.diff and
v.sub.o and v.sub.F are the resonator frequency and free special
range respectively then the light may traverse a distance of
Qt.sub.cav vertically in a propagation distance of dz in the guide.
Estimating that 1-1/e of the wave is diffracted into the cavity in
the distance 1.alpha..sub.g then the effective distance traveled by
the wave is about (v.sub.o /v.sub.F).pi./.eta..sub.diff
L.sub.cav,.alpha..sub.g L.sub.guide during which it receives
optical gain. Using typical numbers this is a distance of 15 cm.
This indicates the feasibility of implementing an optical amplifier
on a chip with monolithic integration which has all the benefits of
the fiber amplifier. This points to the direction of implementing
an integrated transmission system.
There is a particular benefit from using the device as an optical
amplifier which is indicated in FIG. 6. The top view of an
integrated circuit chip is shown in which several grating coupled
amplifiers 401, 402, 403, 404, 405, 406 etc are shown connected by
on-chip waveguides 410, 411, 412413 etc to a single GCVCSEL
.[.410.]. .Iadd.400.Iaddend.. The amplifiers take on identical
phases if the optical path from the GCVCSEL is identical for each.
This arrangement allows each amplifier to produce an amplified
version of the GCVCSEL locked in frequency and phase. The outputs
of the amplifiers are routed by on-chip waveguides 420, 421, 422,
423 to a single output port. The output waveguide may emit from a
cross-sectional area and may combine the outputs of all amplifiers
so that a very high level of spatially coherent light is delivered
to every small spot. This innovation provides a high power density
and very high brightness source.
There are other benefits to be realized from this grating coupled
arrangement which are:
1) the polarization of the vertical cavity wave is forced to
coincide with that of the waveguide. The locking of the
polarization occurs because the waveguide mode is injected into the
cavity at each point and creates some level of stimulation
emission. The emission in the cavity reproduces the same
polarization. The random nature of the polarization of the vertical
cavity laser output is therefore eliminated. The output of the
waveguide will be TE.sub.0 normally because it is most easily
excited in the guide (earlier simulations of Lee and Streifer have
shown in general that the diffraction efficiency of the TM.sub.0
mode is at least 10 times smaller than the TE.sub.0 mode, so
TE.sub.0 becomes the principle supported mode). Because of the
diffraction of the light from the guide into the cavity there will
be a stabilizing effect and an extended range of single mode output
power. For a conventional VCSEL, the output is single mode until a
certain level of power is achieved and then multimode behavior is
observed. In the grating coupled laser the onset of higher order
VCSEL modes will require a much higher level of laser power to
occur because of the stabilizing effect of the waveguide injected
energy. In fact, the GCVCSEL will remain single mode until a higher
order mode in the waveguide such as TE.sub.1 and TE.sub.2 matches
to a higher order mode in the VCSEL.
2) The mode suppression ration will be characteristic of the
vertical cavity laser. Because of the single mode nature of the
VCSEL, the tendency for mode partition noise will be much reduced.
The RlN noise should be typical of the VCSEL.
3) One of the problems of edge emitting and vertical cavity lasers
is the effect of back reflections into the laser when coupling to a
fiber. In the grating coupled VCSEL, this problem is addressed in a
unique way which may be understood from FIG. 1. Light is coupled
from the laser to the waveguide and is transported to the chip
edge. Reflections travel back to the laser and a standing wave will
be set
the photon response is proportional to the product of the injected
carriers and the injected photons. Therefore in the laser cavity,
at any position along the guide we need to consider a mixture of
the dispersed pulse traveling on the transmission line and the
dispersed pulse traveling in the waveguide and to represent their
individual time dependencies.
in the laser there is an amplifier effect which means photons
produce additional photons without the need for additional
electrons. This may be considered an optical to optical effect as
opposed to the electrical to optical effect of the carriers
injected from the transmission line. Therefore we need to consider
the dynamics of the optical amplifier effect in the waveguide
itself so that the photon pulse is growing not only due to the
injection from the line but also due to the internal optical gain.
And as we mentioned earlier, this optical gain can be in one of two
forms depending upon how far above or below threshold the laser is
biassed. This situation is to be constrasted with the detector in
which electrons are produced (i.e. the reverse process) only by the
conversion of the pulse photons.
proper analysis requires use of the actual differential equations
representing the electron and photon populations but represented in
the form of traveling waves. These equations have not yet been
solved self-consistently in the literature for the conventional
diode laser without any travelling wave effects.
In spite of these complications it is clear that if the waveguide
and transmission dispersions can be minimized and the internal
parasitic RC constant can be reduced to 5-10 ps, then velocity
matching of the HFET transmission line and the vertical cavity
waveguide can enable speeds in excess of 100 GHz.
GRATING COUPLED TRAVELING WAVE DETECTORS
The identical structure performs the function of the traveling wave
detector. Traditional detector geometries available to the designer
include the classical vertically illuminated PIN structure or the
waveguide structure which is edge illuminated. The inherent
bandwidth-efficiency trade-off in the vertical device between
absorption efficiency in the active layer and carrier transit time
through it have been addressed significantly by the implementation
of resonant cavity enhanced (RCE) structures wherein multiple
optical passes are used to obtain almost total absorption in a very
narrow active layer, i.e. in a quantum well. The drawback of the
RCE is the narrow optical bandwidth which results from the high
finesse of the cavity. Nevertheless, for many of the emerging
practical system architectures in which wavelength division
multiplexing is employed, the wavelength selectivity offered by the
cavity is exactly which is required to perform optical to
electronic demultiplexing. The difficulty of course is to devise a
means to inject the light into the cavity since the high
reflectivity of the cavity will reject the optical input unless it
is exactly positioned within the narrow bandwidth corresponding to
the position of the cavity optical mode.
In the waveguide configuration, it is typical to use a double
heterostructure semiconductor structure with a quantum well active
region. The thickness of the active layer can also be minimal since
the absorption occurs along the length of the guide which can be
designed for complete absorption. The transit time limitation and
the RC limitation can be essentially the same as that of the
vertically illumination RCE device. The efficiency of the device
does suffer, however, from the problem of poor input coupling since
the numerical aperture of the typical semiconductor waveguide is
small and the mode is not well matched to the typical mode of the
optical fiber. These devices have been reported with 50 GHZ
bandwidth and 40% external quantum efficiency and also 68% external
quantum efficiency with >50 GHZ bandwidth.
Both of the above approaches behave as lumped element devices
electrically and consequently, the reported bandwidths are
approximately limited by the load resistance and the device
capacitance. To alleviate the lumped element limitation and thereby
improve bandwidth, traveling wave structures have been proposed.
These devices basically combine the optical waveguide configuration
with an electrical transmission line. This approach, which was
introduced initially to enhance the speed of lithium niobate
waveguide modulators has the potential to substantially reduce the
effect of the RC time constants imposed by external circuits. The
advantage is obtained because the load impedance presented to the
detector does not combine with the internal impedance of the
detector to establish a time constant if the load is matched to the
characteristic impedance of the line. The temporal response is
further improved if the transmission line energy velocity and the
waveguide optical group velocity are matched, i.e. the condition of
zero velocity dispersion.
In practice, impedance matching and velocity matching are very
difficult. Furthermore, the TWPD still suffers from the problem of
poor input coupling since the basic semi-conductor waveguide
structure has remained unchanged. In fact the waveguide must be 1
.mu.m or less in width to realize reasonable transmission line
parameters and this exacerbates the coupling problem.
Another limitation with the existing traveling wave, waveguide or
RCE designs is the problem of integration with electronic devices.
A traveling wave device intended for 100 GHZ operation must feed
photocurrent to an FET or bipolar front end in a matched
configuration to avoid reflections. It is not practical or cost
effective to do this with hybrid connections except for specialized
applications and it thus becomes essential to have an integrated
approach. Ideally, the integration should encompass the detector,
the laser, and the electronic amplifier.
In the embodiment of the Inversion Channel Technology (ICT), the
HFET resonant cavity enhanced detector is a novel means to address
these problems since it combines the virtues of the vertical cavity
RCE structure and the TW concept into a single device. This
approach has several advantages which include 1) optimized mode
matching to an optical fiber to achieve improved input coupling 2)
optimized impedance matching to reduce reflections, 3) optimized
velocity matching to reduce pulse dispersion, and 4) integrated
circuit compatibility to achieve a low cost high performance
package.
In the ICT the laser and detector are physically the same
structure. Therefore FIGS. 1, 2 and 3 apply here. FIG. 3 show the
traveling wave version of the HFET. To differentiate between the
laser and the detector operation requires the device cross-section
in FIG. 8 which shows the appropriate current flows. This figure
indicates that the collection of carriers in the devices is lateral
for the electrons and vertical for the holes. If the collector is
contacted with a negative bias then the holes are removed downward
to the collector. On the other hand if the gate is contacted with a
negative bias, the hole current flows upward to the gate electrode.
It is noted that the collector operation can be achieved with zero
collector to source bias since the barrier up which may be at a
different frequency. Normally this energy will re-enter the cavity
and may destabilize the laser. In the grating coupled laser, which
we have modeled using an equivalent three layer waveguide, the
asymmetry of the grating causes a dominant fraction of the power to
be diffracted into the guide for light traveling towards the chip
edge (direction of laser emission) and it also causes a dominant
fraction of the light to be diffracted out of the waveguide for
light approaching the laser from the edge of the chip. In essence
then, the grating asymmetry acts to reject the light re-entering
the laser with a ratio of diffraction up to diffraction down which
is between 50 and 100:1. The grating thus acts as an optical
isolator.
4) The GCVCSEL output is into a waveguide on the chip. The
waveguide transports the light to the chip edge. Output coupling of
the laser light to a fiber occurs from the waveguide to the five.
One of the major problems in manufacturing involves attaching fiber
to the chip and much effort has gone into the development of spot
size transformers which are ways to match the waveguide mode size
to the fiber aperture. The waveguide output is easily tapered in
the lateral dimension to achieve this matching. In the vertical
dimension the mode size can be enlarged considerably by the use of
the ion implant to disorder the waveguide. As has been described
elsewhere in the process flow for the inversion channel technology,
the waveguide core is implanted with Si during the formation of the
source and drain regions. This implant after RTA serves to disorder
the bandgap of the quantum well layers which reduces the index. The
net effect is to move the core index closer to the effective index
of the upper and lower quantum well regions which causes the
expansion of the mode into these regions. Judicious use of this
implant and anneal step can be used to optimize the mode shape to
increase the tolerances for the mode to fiber coupling problem.
Another way that the mode may also be expanded downwards into the
lower DBR mirror is by adjusting the width of the guide and
therefore the extent of the lateral oxidation. As the lateral
oxidation can no longer extend totally underneath the guide, the
confinement will be reduced and the mode will expand downwards into
an unoxidized mirror structure.
Yet another way to widen the mode shape vertically is to remove
layers of the upper DBR mirror from the waveguide as the chip edge
is approached. In the device area there are many dielectric pairs
to eliminate emission through the upper mirror. This maintains
tight mode confinement. Along the waveguide these layers can be
selectively removed to widen the mode shape.
HIGH SPEED OPERATION OF THE GCVSEL
A primary motivation for this design of laser is to achieve very
high speed performance. Within the inversion channel technology the
HFET laser is ideally suited to achieve very high bandwidths. The
HFET laser is a laterally injected laser in which the gate/emitter
and source injecting terminals lay next to each other along the
surface and are therefore configured as adjacent electrodes as
illustrated in FIG. 3. Also, in the vertical arrangement as
illustrated in FIG. 1 or 2, the distance from the quantum wells to
the semiconductor surface can be 1/2 wavelength as in most VCSEL
designs and since the source drain implant is performed from
approximately 1000 .ANG. above the quantum well to achieve minimum
channel access resistance, then the positive and negative
electrodes form an almost perfect coplanar transmission line. The
vertical cavity of the HFET laser structure is formed by the
deposition of the dielectric stack over the electrode structure.
These dielectric layers form the top dielectric cover for the
coplanar line and are therefore important in determining Z.sub.o.
When implemented in this form the HFET laser implements almost
preferably a traveling wave laser. This traveling wave property
extends the bandwidth of the laser to the limit imposed by the
internal parasitic resistance and time constant because the
coplanar electrical transmission line can be terminated on the chip
by a transistor adjusted in impedance to match the Z.sub.o of the
line. Then if the transmission line phase velocity and the
waveguide group velocity are matched, one could introduce a signal
on the coplanar line which would propagate at the same speed as the
photon pulse which was being produced by the continuous injection
of charge into the channel from the pulse propagating on the line.
Suppose there was no dispersion of the electrical pulse and no
dispersion of the optical pulse. If there was negligible delay in
producing the photon (i.e. negligible transit time into the
channel) and negligible delay in converting the electron to a
photon (very fast laser internal response) then the laser would
have an infinite bandwidth since then a delta function of charge
introduced to the line would produce (after the transit time of the
waveguide) a delta function of photons. The extent to which these
conditions are not met determines the maximum laser speed and
generally it is the internal parasitic RC constant which becomes
the limiting factors (as we discuss for the detector this parasitic
bandwidth is about 100 GHz).
To determine further the dynamic operation consider a pulse
introduced on to the coplanar line at x=0. Because of the almost
identical structure of the optical waveguide and the transmission
line in terms of the materials both above and below the
semiconductor surface, the optical group velocity and the
electrical phase velocity will be almost matched. As the pulse
propagates on the line, it will continuously decrease in value as
charge is injected laterally at each position x into the laser
active section. Now the effect of the injected charge will be a
maximum if the charge is injected at precisely the point of the
maximum photon density. Also the charge impulse initially beings to
create a photon impulse starting at x=0. Then if the photon pulse
and the charge pulse move at the same velocity (i.e. the matched
condition), it follows that as the charge impulse travels on the
transmission line it will always be injecting its incremental
charge into the laser at the position which corresponds to the
maximum photon density in the waveguide. If this is the case, the
photon pulse will grow the most efficiently because the number of
photons produced by the injecting charge is proportional to the
injected charge and the photon density, i.e. the product of the
electron and photon densities. This behavior is illustrated
schematically in FIG. 7 which shows the case at some position x
along the waveguide the situations when the electrical pulse
travels slower, faster and at exactly the same speed as the optical
pulse. Ideally when they travel at the same speed, the photon pulse
is a maximum height because the injected charge x photon density
has been a maximum at every position and also the pulse width will
be the narrowest because, assuming that the internal laser dynamics
are sufficiently fast, the pulse width of the photons will be as
narrow as the charge pulse. If there is negligible dispersion on
the transmission line then the charge pulse and thus the photon
pulse will retain its original delta function form, i.e. the photon
pulse will remain essentially as fast as the input electrical
pulse.
A complete analysis of the laser dynamic performance is exceedingly
complicated if one attempts to illustrate the effects of several
properties unique to the lasting mechanism which are at zero bias
is low whereas the gate operation requires a bias to lower the
channel to gate barrier for holes preferentially relative to the
collector. The electrons flow within the inversion channel and are
collected at the source nodes. The electrons flow to both source
nodes so that the worst case transit time corresponds to 1/2 of the
channel length and the average effective delay corresponds to a
transit distance of L/4. Note that the vertical cavity geometry in
FIG. 2 will typically admit light through an opening in th gate
electrode so that the conduction of holes to the gate is by the 2D
funneling mechanism which is typically used in the VCSEL structure
to provide current injection into the same region as the optical
emission. No conduction is required through the mirror structure
however since the mirror is applied in the form of a dielectric
stack at the end of the fabrication sequence. For the case of the
waveguide configuration in FIG. 3, the potential across the gate is
maintained by high doping and the wave is guided parallel to metal
contact stripe and sufficiently separated from it to avoid
excessive loss.
The description of the technology changes to accommodate the
detector are essentially the same as those of the laser above. The
metal contact is opened, as in the conventional vertical cavity
device, to allow the passage of the light in the vertical
direction. However here the light is propagating both horizontally
and vertically. The dielectric mirror of the vertical cavity device
is used here in a multi-functional role. First, the semiconductor
growth between the quantum well active region and the dielectric
sack is very thin, i.e. approximately .lambda./2n, where n is the
average material index, in order to move the gate contact as close
as possible to the inversion channel. This is necessary to form a
high frequency transistor structure. However the optical mode is
still efficiently guided because the dielectric stack provides
efficient guiding of the mode. The mode is centered in the quantum
wells but extends well above the gate metal contact. Second, the
dielectric stack also forms a high finesse cavity in the vertical
direction. Therefore the number of pairs in the stack and the index
difference are selected to achieve the desired finesse for the
resonant cavity. Third, the multiple layer structure of the cavity
mirror allows a large optical mode to be supported for propagation
in the horizontal direction. The enlarged mode size increases the
mode near-field pattern and decreases the far-field angles which
facilitates easier coupling to a fiber. The input light is edge
coupled to a waveguide at the chip edge with a cross-section
designed to optimum coupling. The waveguide guides the light to the
detector where it propagates along the device waveguide as shown in
FIG. 3.
As for the laser the key element to enable the combined waveguide,
vertical cavity operation is a grating which is created in the
first layer of the dielectric stack. This is a second order grating
which diffracts a portion of the input wave into the vertical
cavity at each position along the guide. Since the light
propagating vertically in the cavity is absorbed essentially
completely due to the resonant enhancement effect then the
limitation on the detector efficiency, i.e. the length of detector
required, is determined by the grating parameter .alpha..sub.g.
Because the grating index change can be made fairly large by
suitable design of the dielectric stack then .alpha..sub.g can be
large and the waveguide length can be optimized for high speed
operation.
One of the obvious features of this design is that since the light
is transferred to the resonant enhanced structure via the grating
which passes below the dielectric stack then the problem of
injecting light into the cavity through a dielectric mirror with a
very narrow modal bandwidth has been eliminated. Clearly, the light
will not be absorbed if its frequency does not align with that of
the mode. However, this is a desirable property, since it allows
the cavity to select any particular frequency as would be required
in a WDM application, i.e. the light is always coupled into the
cavity with the cavity mode providing the filtering or
demultiplexing operation. Those frequencies which are not selected
are simply coupled back into the waveguide by the grating and are
propagated out of the device.
The HFET TW detector illustrated are FIG. 3 uses the gate contact
to collect the hole current in order that it may form the signal
line for the transmission line. The other side of the line, i.e.
the ground line, is formed by the metal electrodes on the source
junctions. Due to the aspect ratio as indicated in FIG. 3, which
shows the two metal electrodes at approximately the same elevation,
(within 1500-2000 .ANG.), the source and gate electrodes behave as
a coplanar transmission line. Therefore, as photo-charge is
injected into the source and gate electrodes, these perturbations
form a traveling wave on the coplanar line which propagates to the
far end of the device (x=L in FIG. 1). If the group velocity of the
transmission line wave and the group velocity of the optical wave
are matched then the photo-charge is added synchronously to the
electrical wave and there will be no distortion of the pulse due to
velocity mismatch. If the transit time of holes to the gate from
the channel and of electrons to the source contact from the channel
are equal and if there is no dispersion on the transmission line or
the waveguide then the input pulse shape will be preserved. Finally
if the transmission line is exactly matched in its characteristic
impedance, there will be no reflection and the pulse will be
perfectly replicated, i.e. the impulse response of the detector
would be infinite. These conditions can never be realized perfectly
and it is the deviation of these criteria from the ideal which
determines the actual detector bandwidth.
The virtue of the traveling wave concept is that the impedance of
the circuit following the detector does not combine with the
detector impedance to produce delay if ideal line matching is
achieved. However parasitic RC delays which are intrinsic to the
device are still an issue. These are the time constant associated
with transferring the electron and hole from the absorption region
to the source metal and gate metal respectively. To minimize these
parasitic effects, the transmission line metal to metal spacing
should be reduced and the channel doping increased as much as
possible by aggressive technology scaling. The other fundamental
delay is the transit time of electrons in the absorbing FET
channel. For a channel length of L=1 .mu.m, this time corresponds
to an average of L/4v.sub.s For a v.sub.s =2*10.sup.7 cm/sec at low
fields, this corresponds to a delay of about 0.15 ps. From the
point of view of efficiency, the attenuation of the transmission
line .alpha..sub.e must be added to the losses in the resonant
cavity enhanced detection process. This attenuation increases with
frequency with dependencies on the source and gate metal skin
effect depths and the frequency dependent propagation constant. In
this respect, the bandwidth limitation of the lumped element
configuration has been exchanged for a conversion efficiency
limitation resulting from the attenuation or loss of the traveling
photo-induced current.
* * * * *