U.S. patent number RE28,597 [Application Number 05/551,091] was granted by the patent office on 1975-10-28 for resistor.
This patent grant is currently assigned to TDK Electronics Co., Ltd.. Invention is credited to Kazuo Horii, Kazuo Ohya, Hiroyuki Takashina, Matuo Zama.
United States Patent |
RE28,597 |
Horii , et al. |
October 28, 1975 |
Resistor
Abstract
An improved thin-film resistor low in the resistance temperature
coefficient is provided. A metal film or foil is bonded with a
thermosetting resin onto an insulating base plate having a lower
linear expansion coefficient than the metal and is
etching-processed so as to be of a desired resistance pattern. The
difference in the linear expansion coefficient between the metal
and the insulating base is selected to be 26 to 66 .times.
.sub.-.sup.7 /.degree.C. The metal and base are covered with a
resin so as to be a molded assembly, together with lead wires
connected to both ends of the metal.
Inventors: |
Horii; Kazuo (Tokyo,
JA), Ohya; Kazuo (Tokyo, JA), Zama;
Matuo (Tokyo, JA), Takashina; Hiroyuki (Tokyo,
JA) |
Assignee: |
TDK Electronics Co., Ltd.
(Tokyo, JA)
|
Family
ID: |
27308243 |
Appl.
No.: |
05/551,091 |
Filed: |
February 20, 1975 |
Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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Reissue of: |
400345 |
Sep 24, 1973 |
03824521 |
Jul 16, 1974 |
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Foreign Application Priority Data
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Sep 27, 1972 [JA] |
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47-96904 |
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Current U.S.
Class: |
338/275; 338/293;
338/254 |
Current CPC
Class: |
H01C
7/06 (20130101); H01C 7/22 (20130101) |
Current International
Class: |
H01C
7/22 (20060101); H01C 7/06 (20060101); H01C
001/034 () |
Field of
Search: |
;338/254,275,262,293,308 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Goldberg; E. A.
Attorney, Agent or Firm: Wolfe, Hubbard, Leydig, Voit &
Osann, Ltd.
Claims
What is claimed is:
1. A resistor comprising an insulating base, a metal foil bonded
onto said insulating base with an adhesive, the difference between
the linear expansion coefficient of said metal foil and that of
said insulating base being 26 to 66 .times. 10.sup.-.sup.7
/.degree.C, said metal foil being formed in a resistance pattern of
a desired length by etching, lead wires connected to the respective
ends of said metal foil and a mold covering an assembly of said
base, metal foil and lead wires.
2. A resistor according to claim 1 wherein said metal foil is of an
Ni - Cr alloy of a weight ratio of Ni/Cr of 90/10 to 70/30.
3. A resistor according to claim 2 wherein Cu, Al, Si and Mn are
added as additives to said Ni - Cr alloy.
4. A resistor according to claim 1 wherein the ratio of the
thickness of the insulating base to the thickness of the metal foil
is 100 to 1,000 : 1.
5. A resistor according to claim 1 wherein the linear expansion
coefficient of said metal foil is substantially 136 .times.
10.sup.-.sup.7 /.degree.C and the linear expansion coefficient of
said base is 70 .times. 10.sup.-.sup.7 /.degree.C.
6. A resistor according to claim 1 wherein said metal foil is of an
alloy of Ni/Cr of 85/15 containing 4 percent by weight Cu, 2
percent by weight Al, 1 percent by weight Si and 1 percent by
weight Mn.
Description
This invention relates to resistors and, more particularly, to a
resistor which is low in the resistance temperature
coefficient.
Resistors to be used generally for electronic computors,
communication instruments, measuring instruments and the like are
required to meet such various requirements that the resistance
temperature coefficient (which shall be merely called "temperature
coefficient" hereinafter) should be low, that the allowance of the
resistance value should be low, that the size should be small, and
so on.
In conventional resistors, the one which can meet the above
mentioned requirements will be thin film resistors, or wire-wound
resistors in which alloys comparatively low in the temperature
coefficient are used. However, the thin film resistors are made by
a vacuum evaporation or cathode sputtering process and, therefore,
they have a defect that they are short of a temperature stability
as a property peculiar to thin films, that is, as different from
bulky metals.
Generally, in the thin film resistors, the temperature coefficient
is .+-. several 10 to .+-. several 100 p.p.m./.degree.C and it is
very difficult to make the value of the temperature coefficient
smaller.
On the other hand, in the case of a wire-wound resistor, as the
structure of the resistor is three-dimensional, the residual
inductance becomes so high that it is difficult to use the resistor
in a high frequency range. Further, it is almost impossible to
stably manufacture resistors having the temperature coefficient
less than .+-.5 to -5 p.p.m./.degree.C.
There have been already suggested certain measures to solve such
defects in the conventional resistors of the kind referred to, for
example, in Zandman et al. U.S. Pat. Nos. 3,405,381 and
3,517,436.
In the techniques suggested in such patents, a foil is bonded to a
base with an adhesive resin, which resin causes the balance of the
force to be broken and thereby there occurs a distortion of the
base, and in order to avoid such phenomena Zandman et al. suggest
to apply also on the other surface of the base with the same kind
of resin to be of the same thickness, whereby such force that tends
to bend the base due to the adhesive resin applied thereto will be
balanced. Therefore, there are remarkable limitations to the
material and dimensions forming the resin layer and the producing
conditions are very difficult.
The present invention has succeeded in solving the above problems
by bonding a metal foil on an insulating base having a lower linear
expansion coefficient than the metal so that the resistance
temperature coefficient will be reduced by the strain produced in
the metal foil by the difference between the respective linear
expansion coefficients of both.
A main object of the present invention is, therefore, to provide a
resistor which is very low in the resistance temperature
coefficient.
Another object of the present invention is to provide a resistor
low in the residual inductance by bonding a metal foil to an
insulating base so that the structure will be substantially
two-dimensional.
Further, in a resistor obtained by a vacuum evaporation or cathode
sputtering process, as a thin metal film is used, properties
peculiar to such thin film are shown and the resistance is unstable
in respect of the temperature. As a further object, the present
invention is to provide a resistor stable in the resistance by
utilizing the properties of a bulky metal.
The present invention shall now be explained in detail with
reference to certain preferred embodiments in conjunction with the
accompanying drawings, in which:
FIG. 1 shows a heat-treatment curve in the resistor according to
the present invention;
FIG. 2 shows an example of dimensions of the insulating base
employed in the present invention;
FIG. 3 shows a resistance pattern provided on the base;
FIGS. 4 and 5 are diagrams showing resistance variation rate due to
temperature of the resistors according to the present invention;
and
FIG. 6 shows relations between the temperature coefficient and the
difference between the respective linear expansion coefficients of
the metal foil (.beta..sub.1) and of the insulating base
(.beta..sub.2).
The resistor according to the present invention is made as
follows.
An Ni - Cr alloy is rolled to be of a thickness of about 1 to
10.mu. by a known process. The Ni - Cr alloy is of Ni/Cr=90/10 to
70/30 at the weight ratio. As additives thereto, Cu, Al, Si and Mn
are used to adjust the temperature coefficient and linear expansion
coefficient of the alloy. The amounts of the addition of these
additives by weight percent are:
Cu 2 to 5% Al 0.5 to 3% Si 0.5 to 2% Mn 0.5 to 4%
A desired linear expansion coefficient of about 136 .times.
10.sup.-.sup.7 /.degree.C is thus obtained. The metal foil of the
alloy thus made and rolled as above is then heat-treated in a
vacuum or inert gas. For the heat-treatment, it is desirable to
keep the foil at about 600.degree.C for 3 hours with the rates of
the temperature rise and fall as shown in FIG. 1.
Such insulating base having a linear expansion coefficient in the
range of 40 .times. 10.sup.-.sup.7 /.degree.C to 125 .times.
10.sup.-.sup.7 /.degree.C which is lower than that of the Ni - Cr
metal foil as, for example, of borosilicate glass, sintered
alumina, soda glass or the like is used. The relation between the
thickness of the base and the thickness of the metal foil is
selected to be of such a ratio that the thickness of the base / the
thickness of the metal foil = 100 to 1000.
The metal foil is then adhered to a surface of such an insulating
base as above. An adhesive is thinly applied onto said base. At
this time, the thickness of the adhesive should be preferably about
10.mu., and it is also preferable to use an adhesive made of a
thermosetting resin.
Further, in the present invention, the difference in the linear
expansion coefficient .beta. between the base and metal foil is to
be effectively utilized. For this purpose, it is desirable that the
difference in the coefficient .beta. between the base and metal
foil is in the range of 26 to 66 .times. 10.sup.-.sup.7 /.degree.C.
If the difference in the coefficient .beta. is made to be larger
than 66 .times. 10.sup.-.sup.7 /.degree.C, only
resistance-temperature coefficient as low as in the conventional
technique will be obtained. Even if it is made smaller than 26
.times. 10.sup.-.sup.7 /.degree.C, only a large value of the
resistance-temperature coefficient will be obtained.
The metal foil bonded to the base as above is then
etching-processed depending on desired resistance pattern of each
kind, then the insulating base including the foil of desired
insulating pattern is individually cut, lead wires (for example,
tin-plated copper wires of a diameter of 0.16 mm.) are welded to it
to form terminals. Then the product is adjusted to be of a desired
resistance value by trimming. After the adjustment, the thus
obtained resistance element is molded with a phenol resin or epoxy
resin so as to be enclosed in the molded resin.
An experimental example shall be explained in the following:
A metal foil of a thickness of 3'.mu. was made of an Ni - Cr alloy
of Ni/Cr of 85/15 and additives of 4 percent by weight Cu, 2
percent by weight Al, 1 percent by weight Si and 1 percent by
weight Mn, and was heat-treated as shown in FIG. 1. A base was of
sintered alumina of 48 mm. long, 48 mm. wide and 0.6 mm. thick (see
FIG. 2). This base was thinly painted with a bisphenol type
denatured epoxy resin and the above mentioned metal foil was bonded
to it. It was etched in squares of 6 mm. .times. 6 mm. as shown in
FIG. 3 to form a resistance pattern. In the drawing, 1 is a base, 2
is an insulation part, 3 is an etched part, 4 and 5 are terminal
parts of the resistance body, 6 and 7 are lead wires which are
spot-welded to the terminal parts of the resistance body. The lead
wire should be preferably a tin-plated copper wire of a diameter of
0.16 mm. The resistance-temperature characteristics in this case
were as shown in FIG. 4, in which the abscissa represents the
temperature and the ordinate represents the resistance
variation.
The results when the ratio was varied and the material of the base
was varied were as in Table 1.
TABLE 1
__________________________________________________________________________
Resistance temperature coefficient (in p.p.m./.degree.C) obtained
by the ratio of Nl/Cr and the material of the base Weight ratio of
Nl/Cr 77/23 80/20 85/15 Linear Expansion Coefficient (.beta..sub.1
of the metal foil Linear Expansion Coefficient Base (.beta..sub.2)
of the base 100.times.10.sup.-.sup.7 /.degree.C
118.times.70.sup.-.sup.7 /.degree.C 136.times.10.sup.-.sup.7
/.degree.C
__________________________________________________________________________
Boro- 40.times.10.sup.-.sup.7 /.degree.C Resistance .beta..sub.1
-.beta..sub.2 = Resistance .beta..sub.1 -.beta..sub.2 Resistance
.beta..sub.1 -.beta..sub.2 = silicate temperature
60.times.10.sup.-.sup.7 /.degree.C temperature
78.times.10.sup.-.sup.7 /.degree.C 3 temperature 96.times.10.sup.-.
sup.7 /.degree.C glass coefficient coefficient coefficient
(p.p.m./.degree.C): (p.p.m./.degree.C): (p.p.m./.degree.C): -1 to
+1 -7 to +7 -7 to +7 Sintered 70.times.10.sup.-.sup.7 /.degree.C
Resistance .beta..sub.1 -.beta..sub. 2 = Resistance .beta..sub.1
-.beta..sub.2 Resistance .beta..sub.1 -.beta..sub.2 = alumina
temperature 30.times.10.sup.-.sup.7 /.degree.C temperature
48.times.10.sup.-.sup.7 /.degree.C temperature 66.times.10.sup.-.
sup.7 /.degree.C coefficient coefficient coefficient
(p.p.m./.degree.C): (p.p.m./.degree.C): (p.p.m./.degree.C): -2 to
+2 -1 to +1 -2 to +2 Soda 110.times.10.sup.-.sup.7 /.degree.C
Resistance .beta..sub.1 -.beta..sub.2 = Resistance .beta..sub.1
-.beta..sub.2 Resistance .beta..sub.1 -.beta..sub.2 = glass
temperature -10.times.10.sup.-.sup.7 /.degree.C temperature
8.times.10.sup.-.sup.7 /.degree.C temperature 26.times.10.sup.-.
sup.7 /.degree.C coefficient coefficient coefficient
(p.p.m./.degree.C): (p.p.m./.degree.C): (p.p.m./.degree.C): -10 to
+10 -6 to +6 -3 to +3
__________________________________________________________________________
In the above table, the temperature coefficient was calculated by
measuring the resistance values at temperatures of -55.degree.C,
+25.degree.C and +125.degree.C and making 25.degree.C to be a
base.
As evident from Table 1, the temperature coefficient can be made
remarkably low in the case where the difference in the linear
expansion coefficient between the metal foil and insulating base is
of a certain value. FIG. 5 shows examples of the resistance
temperature characteristics of the resistor according to the
present invention, showing that the characteristics vary with the
difference .beta. of the linear expansion coefficient of the base
(of sintered alumina, soda glass or borosilicate glass) at a ratio
of Ni/Cr of 85/15. When the linear expansion coefficient of the
metal foil is .beta..sub.1 and the linear expansion coefficient of
the base is .beta..sub.2, the relations between the difference
between them (.beta..sub.1 - .beta..sub.2) and the temperature
coefficient will be as shown in FIG. 6, in which the batched part
shows the range which can be used in the present invention. It will
be understood hereby that the present invention has excellent
characteristics.
* * * * *