U.S. patent number 8,193,011 [Application Number 13/277,112] was granted by the patent office on 2012-06-05 for thin film deposition apparatus and method of manufacturing organic light-emitting display device by using the same.
This patent grant is currently assigned to Samsung Mobile Display Co., Ltd.. Invention is credited to Yong-Sup Choi, Hee-Cheol Kang, Sang-Soo Kim, Yun-Mi Lee, Hyun-Sook Park, Jae-Kwang Ryu.
United States Patent |
8,193,011 |
Kang , et al. |
June 5, 2012 |
Thin film deposition apparatus and method of manufacturing organic
light-emitting display device by using the same
Abstract
A thin film deposition apparatus and an organic light-emitting
display device by using the same. The thin film deposition
apparatus includes an electrostatic chuck, a plurality of chambers;
at least one thin film deposition assembly; a carrier; a first
power source plug; and a second power source plug. The
electrostatic chuck includes a body having a supporting surface
that contacts a substrate to support the substrate, wherein the
substrate is a deposition target; an electrode embedded into the
body and applying an electrostatic force to the supporting surface;
and a plurality of power source holes formed to expose the
electrode and formed at different locations on the body.
Inventors: |
Kang; Hee-Cheol (Yongin,
KR), Park; Hyun-Sook (Yongin, KR), Ryu;
Jae-Kwang (Yongin, KR), Choi; Yong-Sup (Yongin,
KR), Lee; Yun-Mi (Yongin, KR), Kim;
Sang-Soo (Yongin, KR) |
Assignee: |
Samsung Mobile Display Co.,
Ltd. (Yongin, KR)
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Family
ID: |
43605689 |
Appl.
No.: |
13/277,112 |
Filed: |
October 19, 2011 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20120083061 A1 |
Apr 5, 2012 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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12862153 |
Aug 24, 2010 |
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Foreign Application Priority Data
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Aug 24, 2009 [KR] |
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10-2009-0078175 |
Feb 8, 2010 [KR] |
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10-2010-0011479 |
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Current U.S.
Class: |
438/22; 427/458;
204/298.35; 279/128; 204/297.01; 427/255.5; 427/251;
257/E33.013 |
Current CPC
Class: |
C23C
14/243 (20130101); C23C 14/12 (20130101); C23C
14/568 (20130101); C23C 14/044 (20130101); Y10T
279/23 (20150115); H01L 51/001 (20130101); H01L
51/56 (20130101); Y10S 414/135 (20130101); H01L
51/0081 (20130101) |
Current International
Class: |
H01L
33/26 (20100101); C23C 16/44 (20060101); H01L
21/76 (20060101); C23C 16/00 (20060101) |
Field of
Search: |
;438/22 ;257/E33
;279/128 ;361/234 ;414/935 |
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Primary Examiner: Moore; Karla
Assistant Examiner: Ford; Nathan K
Attorney, Agent or Firm: Christie, Parker & Hale,
LLP
Parent Case Text
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is a divisional of U.S. patent application Ser.
No. 12/862,153, filed Aug. 24, 2010 which claims the benefit of and
priority to Korean Application No(s). 10-2009-0078175, filed Aug.
24, 2009 and 10-2010-0011479 filed Feb. 8, 2010, in the Korean
Intellectual Property Office, the disclosures of which are
incorporated herein by reference.
Claims
What is claimed is:
1. A method of manufacturing an organic light-emitting device, the
method comprising: affixing a substrate which is a deposition
target to an electrostatic chuck, wherein the electrostatic chuck
comprises a body having a supporting surface that contacts the
substrate to affix the substrate by an electrostatic force, an
electrode embedded into the body and applying an electrostatic
force to the supporting surface, and a plurality of power source
holes that are formed to expose the electrode and that are formed
at different locations on the body; moving the electrostatic chuck
supporting the substrate to pass through a plurality of chambers
that are maintained in a vacuum state, wherein at least one of a
plurality of power source plugs is engaged with a power source hole
of the plurality of power source holes at all times when the
substrate is supported by the electrostatic chuck and when the
electrostatic chuck passes through the plurality of chambers;
inserting a first power source plug of the plurality of power
source plugs into a first power source hole selected from among the
plurality of power source holes to supply power to the electrode,
where the first power source plug is installed at an upstream of a
path in which the electrostatic chuck is moved; inserting a second
power source plug of the plurality of power source plugs into a
second power source hole selected from among the plurality of power
source holes to supply power to the electrode, where the second
power source plug is installed in the path to be downstream to the
first power source plug with respect to the path; separating the
first power source plug from the first power source hole; and
forming an organic layer on the substrate by using a thin film
deposition assembly disposed in at least one of the plurality of
chambers and by moving the electrostatic chuck supporting the
substrate or the thin film deposition assembly relative to the
other.
2. The method of claim 1, wherein the first and second power source
plugs are disposed in different chambers, and the second power
source plug is inserted into the second power source hole at about
the same time that the first power source plug is separated from
the first power source hole.
3. The method of claim 1, wherein an inversion robot is located in
at least one of the plurality of chambers to turn over the
electrostatic chuck that supports the substrate, and the method
further comprising: inserting a third power source plug installed
in the inversion robot into a third power source hole selected from
among the plurality of power source holes; and separating the third
power source plug from the third power source hole when the first
power source or second power source is inserted into the first or
second power source hole, respectively.
4. The method of claim 1, wherein the thin film deposition assembly
comprises: a deposition source that discharges a deposition
material; a deposition source nozzle unit disposed at a side of the
deposition source and including a plurality of deposition source
nozzles arranged in a first direction; and a patterning slit sheet
disposed opposite to and spaced apart from the deposition source
nozzle unit and including a plurality of patterning slits arranged
in a second direction perpendicular to the first direction, wherein
the deposition source, the deposition source nozzle unit, and the
patterning slit sheet are integrally formed as one body, and the
thin film deposition assembly is disposed apart from the substrate
so that the depositing of the deposition material is performed
while the substrate is moved relative to the thin film deposition
apparatus in the first direction.
5. The method of claim 1, wherein the thin film deposition assembly
comprises: a deposition source that discharges a deposition
material; a deposition source nozzle unit disposed at a side of the
deposition source and including a plurality of deposition source
nozzles arranged in a first direction; a patterning slit sheet
disposed opposite to and spaced apart from the deposition source
nozzle unit and including a plurality of patterning slits arranged
in the first direction; and a barrier plate assembly disposed
between the deposition source nozzle unit and the patterning slit
sheet in the first direction, and including a plurality of barrier
plates for partitioning a deposition space between the deposition
source nozzle unit and the patterning slit sheet into a plurality
of sub-deposition spaces, wherein the thin film deposition assembly
is disposed apart from the substrate so that the depositing of the
deposition material is performed on the substrate by moving the
thin film deposition assembly or the substrate relative to the
other.
6. A method of manufacturing an organic light-emitting device, the
method comprising: affixing a substrate which is a deposition
target to an electrostatic chuck, wherein the electrostatic chuck
comprises a body having a supporting surface that contacts the
substrate to affix the substrate by an electrostatic force, an
electrode embedded into the body and applying an electrostatic
force to the supporting surface, and a plurality of power source
holes that are formed to expose the electrode and that are formed
at different locations on the body; moving the electrostatic chuck
to which the substrate is affixed along a predetermined path to
pass through a plurality of chambers that are maintained in a
vacuum state; supplying power to the electrode of the electrostatic
chuck by engaging the electrostatic chuck with one or more of a
plurality of power source plugs arranged along the predetermined
path and sequentially inserted into and removed from the power
source holes such that there is at least one of the plurality of
power source plugs engaged with a power source hole at all times
when the substrate is affixed to the electrostatic chuck and when
the electrostatic chuck passes through the plurality of chambers;
and forming an organic layer on the substrate depositing a
deposition material from at least one thin film deposition assembly
disposed in at least one of the plurality of chambers as the
substrate moves through the at least one of the plurality of
chambers.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
Aspects of the present invention relate to a thin film deposition
apparatus and a method of manufacturing an organic light-emitting
display device by using the same, and more particularly, to a thin
film deposition apparatus that can be simply applied to manufacture
large display devices on a mass scale, and a method of
manufacturing an organic light-emitting display device by using the
thin film deposition apparatus.
2. Description of the Related Art
Organic light-emitting display devices have a larger viewing angle,
better contrast characteristics, and a faster response rate than
other display devices, and thus have drawn attention as a
next-generation display device.
An organic light-emitting display device includes intermediate
layers, including an emission layer disposed between a first
electrode and a second electrode that are arranged to face each
other. The electrodes and the intermediate layers may be formed by
using various methods, one of which is a single deposition method.
When an organic light-emitting display device is manufactured by
using the single deposition method, a fine metal mask (FMM) having
the same pattern as a thin film to be formed is disposed to closely
contact a substrate, and a thin film material is deposited over the
FMM in order to form the thin film having the desired pattern.
However, it is disadvantageous to use an FMM when manufacturing
organic light-emitting display devices on a large scale using a
large sized mother-glass. When a large mask, such as an FMM, is
used for deposition onto a large sized mother-glass, the mask is
likely to bend due to the weight thereof, thereby causing a pattern
to be distorted. Accordingly, FMMs have disadvantages with respect
to the current trend toward high pitch patterning.
Furthermore, in conventional deposition methods, a metal mask is
disposed on a first surface of a substrate and a magnet is disposed
on a second surface of the substrate while the edges of the
substrate are fixed by a chuck, so that the magnet allows the metal
mask to contact the first surface. However, since in this case,
only the edges of the substrate are supported by the chuck, a
central part of the substrate may sag when the substrate is large.
The greater the size of the substrate, the greater the likelihood
of sagging.
SUMMARY OF THE INVENTION
Aspects of the present invention provide a thin film deposition
apparatus that may be simply applied to manufacture large display
devices on a mass scale and which may be applied to perform
high-pitch patterning, and a method of manufacturing an organic
light-emitting display device by using the thin film deposition
apparatus.
According to an aspect of the present invention, there is provided
a thin film deposition apparatus including an electrostatic chuck,
an a plurality of chambers; at least one thin film deposition
assembly; a carrier; a first power source plug; and a second power
source plug. The electrostatic chuck includes a body having a
supporting surface that contacts a substrate to affix the substrate
by electrostatic force, wherein the substrate is a deposition
target; an electrode embedded into the body and applying an
electrostatic force to the supporting surface; and a plurality of
power source holes formed to expose the electrode and formed at
different locations on the body. The plurality of chambers are
maintained in a vacuum state. The at least one thin film deposition
assembly is located in at least one of the plurality of chambers,
is separated from the substrate by a predetermined distance, and is
used to form a thin film on the substrate affixed to the
electrostatic chuck. The carrier is used to move the electrostatic
chuck to pass through the plurality of chambers. The first power
source plug is installed to be attachable to and detachable from
one of the power source holes in order to supply power to the
electrode. The first power source plug is installed at an upstream
of a path in which the electrostatic chuck is moved by the carrier.
The second power source plug is installed to be attachable to and
detachable from another of the power source holes in order to
supply power to the electrode. The second power source plug is
installed in the path to be downstream to the first power source
plug with respect to the path.
According to a non-limiting aspect, the first and second power
source plugs may be disposed in different chambers.
According to a non-limiting aspect, the thin film deposition
apparatus may further include an inversion robot disposed in at
least one of the plurality of chambers to turn over the
electrostatic chuck to which the substrate is affixed; and a third
power source plug installed in the inversion robot, the third power
source plug installed to be attachable to and detachable from one
of the plurality of power source holes in order to supply power to
the electrode.
According to a non-limiting aspect, the carrier may include a
support installed to extend through the chambers; a plurality of
movement bars engaging the support and supporting edges of the
electrostatic chuck; and a plurality of driving units each disposed
between the support and a respective one of the plurality of
movement bars, the plurality of driving units for moving the
movement bars along upper surfaces of the support,
respectively.
According to a non-limiting aspect, the at least one thin film
deposition assembly may include a deposition source for discharging
a deposition material; a deposition source nozzle unit disposed at
a side of the deposition source and including a plurality of
deposition source nozzles arranged in a first direction; and a
patterning slit sheet disposed opposite to and spaced apart from
the deposition source nozzle unit and including plurality of
patterning slits arranged in a second direction perpendicular to
the first direction. Deposition may be performed while the
substrate is moved relative to the thin film deposition apparatus
in the first direction. The deposition source, the deposition
source nozzle unit, and the patterning slit sheet may be integrally
formed as one body.
According to a non-limiting aspect, the deposition source, the
deposition source nozzle unit, and the patterning slit sheet may be
integrally connected as one body by a plurality of connection
members.
According to a non-limiting aspect, the connection members may be
formed to seal a space between the deposition source nozzle unit
disposed at the side of the deposition source, and the patterning
slit sheet.
According to a non-limiting aspect, the plurality of deposition
source nozzles may be tilted at a predetermined angle.
According to a non-limiting aspect, the plurality of deposition
source nozzles may include deposition source nozzles arranged in
two rows formed in the first direction, and wherein each of the
deposition source nozzles in each of the two rows may be tilted at
the predetermined angle toward a corresponding deposition source
nozzle of the other of the two rows.
According to a non-limiting aspect, the plurality of deposition
source nozzles may include deposition source nozzles arranged in
two rows formed in the first direction. Deposition source nozzles
of a row located at a first side of the patterning slit sheet may
be arranged to face a second side of the patterning slit sheet, and
the deposition source nozzles of the other row located at the
second side of the patterning slit sheet may be arranged to face
the first side of the patterning slit sheet.
According to a non-limiting aspect, the at least one thin film
deposition assembly may include a deposition source for discharging
a deposition material; a deposition source nozzle unit disposed at
a side of the deposition source and including a plurality of
deposition source nozzles arranged in a first direction; a
patterning slit sheet disposed opposite to and spaced apart from
the deposition source nozzle unit and including a plurality of
patterning slits arranged in the first direction; and a barrier
plate assembly disposed between the deposition source nozzle unit
and the patterning slit sheet in the first direction, and including
a plurality of barrier plates for partitioning a disposition space
between the deposition source nozzle unit and the patterning slit
sheet into a plurality of sub-deposition spaces. The at least one
thin film deposition apparatus may be disposed apart from the
substrate by a predetermined distance, and the at least one thin
film deposition assembly or the substrate may be moved relative to
the other.
According to a non-limiting aspect, the plurality of barrier plates
may extend in a second direction that is substantially
perpendicular to the first direction.
According to a non-limiting aspect, the barrier plate assembly may
include a first barrier plate assembly including a plurality of
first barrier plates; and a second barrier plate assembly including
a plurality of second barrier plates.
According to a non-limiting aspect, the first barrier plates and
the second barrier plates may extend in the second direction.
According to a non-limiting aspect, the first barrier plates may be
arranged to correspond to the second barrier plates,
respectively.
According to a non-limiting aspect, the deposition source and the
barrier plate assembly may be disposed apart from each other.
According to a non-limiting aspect, the barrier plate assembly and
the patterning slit sheet may be disposed apart from each
other.
According to another aspect of the present invention, there is
provided a method of manufacturing an organic light-emitting
device, the method including affixing a substrate which is a
deposition target to an electrostatic chuck; moving the
electrostatic chuck to which the substrate is affixed to pass
through a plurality of chambers that are maintained in a vacuum
state; inserting a first power source plug into a first power
source hole selected from among the plurality of power source holes
to supply power to the electrode, where the first power source plug
is installed at an upstream of a path in which the electrostatic
chuck is moved; inserting a second power source plug into a second
power source hole selected from among the plurality of power source
holes to supply power to the electrode, where the second power
source plug is installed in the path to be downstream from the
first power source plug with respect to the path; separating the
first power source plug from the first power source hole; and
forming an organic layer on the substrate by using a thin film
deposition assembly disposed in at least one of the plurality of
chambers and by moving the electrostatic chuck supporting the
substrate or the thin film deposition assembly relative to the
other. The electrostatic chuck includes a body having a supporting
surface that contacts the substrate to support the substrate, an
electrode embedded into the body and applying an electrostatic
force to the supporting surface, and a plurality of power source
holes that are formed to expose the electrode and formed at
different locations on the body.
According to a non-limiting aspect, the first and second power
source plugs may be disposed in different chambers. The second
power source plug may be inserted into the second power source hole
at the same time that the first power source plug is separated from
the first power source hole.
According to a non-limiting aspect, an inversion robot may be
located in at least one of the plurality of chambers to turn over
the electrostatic chuck that supports the substrate. The method may
further include inserting a third power source plug installed in
the inversion robot into a third power source hole selected from
among the plurality of power source holes; and separating the third
power source plug from the third power source hole when the first
power source or second power source is inserted into the first or
second power source hole.
According to a non-limiting aspect, the thin film deposition
assembly may include a deposition source that discharges a
deposition material; a deposition source nozzle unit disposed at a
side of the deposition source and including a plurality of
deposition source nozzles arranged in a first direction; and a
patterning slit sheet disposed opposite to and spaced apart from
the deposition source nozzle unit and including a plurality of
patterning slits arranged in a second direction perpendicular to
the first direction. The deposition source, the deposition source
nozzle unit, and the patterning slit sheet may be integrally formed
as one body, and the thin film deposition assembly may be disposed
apart from the substrate so that the depositing of the deposition
material is performed while the substrate is moved relative to the
thin film deposition apparatus in the first direction.
According to a non-limiting aspect, the thin film deposition
assembly may include a deposition source that discharges a
deposition material; a deposition source nozzle unit disposed at a
side of the deposition source and including a plurality of
deposition source nozzles arranged in a first direction; a
patterning slit sheet disposed opposite to and spaced apart from
the deposition source nozzle unit and including a plurality of
patterning slits arranged in the first direction; and a barrier
plate assembly disposed between the deposition source nozzle unit
and the patterning slit sheet in the first direction, and including
a plurality of barrier plates for partitioning a deposition space
between the deposition source nozzle unit and the patterning slit
sheet into a plurality of sub-deposition spaces. The thin film
deposition assembly may be disposed apart from the substrate so
that the depositing of the deposition material is performed on the
substrate by moving the thin film deposition assembly or the
substrate relative to the other.
According to another aspect of the present invention, a thin film
deposition apparatus may include an electrostatic chuck including a
body having a supporting surface that contacts a substrate to affix
the substrate by an electrostatic force, wherein the substrate is a
deposition target; an electrode embedded into the body and applying
the electrostatic force to the supporting surface; and a plurality
of power source holes formed to expose the electrode and formed at
different locations on the body; a plurality of chambers that are
maintained in a vacuum state; at least one thin film deposition
assembly located in at least one of the plurality of chambers and
separated from the substrate by a predetermined distance, the at
least one thin film deposition assembly being positioned to form a
thin film on the substrate affixed to the electrostatic chuck; a
carrier that moves the electrostatic chuck along a predetermined
path to pass through the plurality of chambers; and a plurality of
power source plugs that removably engage the plurality of power
source holes to supply power to the electrode of the electrostatic
chuck, wherein the plurality of power sources are disposed along
the predetermined path through the plurality of chambers such that
there is at least one power source plug is engaged with a power
source hole at all times as the electrostatic chuck passes through
the plurality of chambers.
According to another aspect of the present invention, a method of
manufacturing an organic light-emitting device may include affixing
a substrate which is a deposition target to an electrostatic chuck,
wherein the electrostatic chuck includes a body having a supporting
surface that contacts the substrate to affix the substrate by an
electrostatic force, an electrode embedded into the body and
applying an electrostatic force to the supporting surface, and a
plurality of power source holes that are formed to expose the
electrode and that are formed at different locations on the body;
moving the electrostatic chuck to which the substrate is affixed
along a predetermined path to pass through a plurality of chambers
that are maintained in a vacuum state; supplying power to the
electrode of the electrostatic chuck by engaging the electrostatic
chuck with one or more of a plurality power source plugs arranged
along the predetermined path and sequentially inserted into and
removed from the power source holes such that there is at least one
of the plurality of power source plugs engaged with a power source
hole at all times when the substrate is affixed to the
electrostatic chuck and when the electrostatic chuck passes through
the plurality of chambers; and forming an organic layer on the
substrate depositing a deposition material from at least one thin
film deposition assembly disposed in at least one of the plurality
of chambers as the substrate moves through the at least one of the
plurality of chambers.
Additional aspects and/or advantages of the invention will be set
forth in part in the description which follows and, in part, will
be obvious from the description, or may be learned by practice of
the invention.
BRIEF DESCRIPTION OF THE DRAWINGS
These and/or other aspects and advantages of the invention will
become apparent and more readily appreciated from the following
description of the embodiments, taken in conjunction with the
accompanying drawings of which:
FIG. 1 is a schematic view of a thin film deposition apparatus
according to an embodiment of the present invention;
FIG. 2 is a schematic view of a thin film deposition apparatus
according to another embodiment of the present invention;
FIG. 3 is a schematic view of an electrostatic chuck included in
the thin film deposition apparatus of FIG. 1 or 2, according to an
embodiment of the present invention;
FIG. 4 is a cross-sectional view of a first circulating unit
included in the thin film deposition apparatus of FIG. 1 or 2,
according to an embodiment of the present invention;
FIG. 5 is a cross-sectional view of a second circulating unit
included in the thin film deposition apparatus of FIG. 1 or 2,
according to an embodiment of the present invention;
FIG. 6 is a cross-sectional view of a system that supplies power to
the electrostatic chuck during movement, according to an embodiment
of the present invention;
FIG. 7 is a cross-sectional view of a system that supplies power to
the electrostatic chuck during movement, according to another
embodiment of the present invention;
FIG. 8 is a schematic perspective view of a thin film deposition
assembly according to an embodiment of the present invention;
FIG. 9 is a schematic sectional side view of the thin film
deposition assembly of FIG. 8;
FIG. 10 is a schematic sectional plan view of the thin film
deposition assembly of FIG. 8;
FIG. 11 is a schematic perspective view of a thin film deposition
assembly according to another embodiment of the present
invention;
FIG. 12 is a schematic perspective view of a thin film deposition
assembly according to another embodiment of the present
invention;
FIG. 13 is a schematic perspective view of a thin film deposition
assembly according to another embodiment of the present
invention;
FIG. 14 is a schematic sectional side view of the thin film
deposition assembly of FIG. 13;
FIG. 15 is a schematic sectional plan view of the thin film
deposition assembly of FIG. 13;
FIG. 16 is a perspective view of a thin film deposition assembly
according to another embodiment of the present invention; and
FIG. 17 is a cross-sectional view of an organic light-emitting
display device manufactured using a thin film deposition assembly,
according to an embodiment of the present invention.
DETAILED DESCRIPTION OF THE EMBODIMENTS
Reference will now be made in detail to the present embodiments of
the present invention, examples of which are illustrated in the
accompanying drawings, wherein like reference numerals refer to the
like elements throughout. The embodiments are described below in
order to explain the present invention by referring to the
figures.
FIG. 1 is a schematic view of a thin film deposition apparatus
according to another embodiment of the present invention. FIG. 2 is
a schematic view of a thin film deposition apparatus 1 according to
another embodiment of the present invention. FIG. 3 is a schematic
view of an electrostatic chuck 600 included in the thin film
deposition apparatus of FIG. 1 or 2, according to an embodiment of
the present invention.
In particular and referring to FIG. 1, the thin film deposition
apparatus according to the current embodiment includes a loading
unit 710, an unloading unit 720, a deposition unit 730, a first
circulating unit 610, and a second circulating unit 620.
The loading unit 710 may include a first rack 712, a transport
robot 714, a transport chamber 716, and a first inversion chamber
718.
A plurality of substrates 500 onto which a deposition material has
not yet been applied are stacked up on the first rack 712. The
transport robot 714 picks up one of the substrates 500 from the
first rack 712, disposes it on the electrostatic chuck 600
delivered by the second circulating unit 620, and moves the
electrostatic chuck 600 on which the substrate 500 is disposed to
the transport chamber 716. Although not shown in the drawings, the
transport robot 714 may be disposed in a chamber that is maintained
at an appropriate degree of vacuum.
The first inversion chamber 718 is disposed adjacent to the
transport chamber 716. An inversion robot 719 located in the first
inversion chamber 718 turns the electrostatic chuck 600 over to be
disposed on the first circulating unit 610 on the deposition unit
730.
As illustrated in FIG. 3, in the electrostatic chuck 600, an
electrode 602 to which voltage is applied is embedded into a body
601 formed of ceramic. When a high voltage is applied to the
electrode 602, one of the substrates 500 is attached to the body
601. The electrostatic chuck 600 will be described in detail
later.
Referring to FIG. 1, the transport robot 714 places one of the
substrates 500 on the electrostatic chuck 600, the electrostatic
chuck 600 on which the substrate 500 is disposed is moved to the
transport chamber 716, and the first inversion robot 719 turns the
electrostatic chuck 600 over so that the substrate 500 is turned
upside down in the deposition unit 730. In more detail, the
electrostatic chuck 600 is inverted so that the substrate 500 will
face the thin film deposition assemblies 100, 200, 300, and 400
when the electrostatic chuck 600 and substrate pass through the
deposition unit 730, to be described later. Both the transport
chamber 716 and the first inversion chamber 718 may be chambers
that are maintained at an appropriate degree of vacuum.
The operation of the unloading unit 720 is opposite to that of the
loading unit 710. Specifically, a second inversion robot 729 moves
the electrostatic chuck 600 on which the substrate 500 is disposed,
which is moved from the deposition unit 730, to an ejection chamber
726 by turning the electrostatic chuck 600 over in a second
inversion chamber 728. Then, an ejection robot 724 picks out the
electrostatic chuck 600 on which the substrate 500 is disposed from
the ejection chamber 726, separates the substrate 500 from the
electrostatic chuck 600, and then places the substrate 500 on the
second rack 722. The electrostatic chuck 600 that is separated from
the substrate 500 is returned back to the loading unit 710 via the
second circulating unit 620. Both the second inversion chamber 728
and the ejection chamber 726 may be chambers that are maintained at
an appropriate degree of vacuum. Although not shown in the
drawings, the ejection robot 724 may also be disposed in a chamber
that is maintained at an appropriate degree of vacuum.
However, the present invention is not limited to the above
description, and when the substrate 500 is initially disposed on
the electrostatic chuck 600, the substrate 500 may be fixed onto a
bottom surface of the electrostatic chuck 600 and may be moved to
the deposition unit 730 together with the electrostatic chuck 600.
(In FIGS. 1 and 2, terms such as "top surface" and "bottom surface"
are with reference to a "top surface" being a surface facing the
viewer in FIGS. 1 and 2 and "a bottom surface" as being a surface
facing away from the viewer.) In this case, for example, the first
and second inversion chambers 718 and 728 and the first and second
inversion robots 719 and 729 are not needed.
The deposition unit 730 includes at least one deposition chamber.
As illustrated in FIG. 1, the deposition unit 730 may include a
first chamber 731, and first to fourth thin film deposition
assemblies 100, 200, 300, and 400 may be disposed in the first
chamber 731. Although FIG. 1 illustrates that a total of four thin
film deposition assemblies, i.e., the first to fourth thin film
deposition assemblies 100 to 400, are installed in the first
chamber 731, the total number of thin film deposition assemblies
that can be installed may vary according to a deposition material
and deposition conditions. The first chamber 731 is maintained in a
vacuum state during a deposition process.
In the thin film deposition apparatus illustrated in FIG. 2, a
deposition unit 730 may include a first chamber 731 and a second
chamber 732 that are connected to each other, and first and second
thin film deposition assemblies 100 and 200 may be disposed in the
first chamber 731 and third and fourth thin film deposition
assemblies 300 and 400 may be disposed in the second chamber 732.
In this case, other chambers may further be added.
In the embodiment illustrated in FIG. 1, the electrostatic chuck
600 on which the substrate 500 is disposed is either moved to the
deposition unit 730 or is moved sequentially to the loading unit
710, the deposition unit 730, and the unloading unit 720 via the
first circulating unit 610. The electrostatic chuck 600 that is
separated from the substrate 500 in the unloading unit 720 is moved
by the second circulating unit 620 to the loading unit 710.
The first circulating unit 610 is installed to more the
electrostatic chuck on which the substrate 500 is disposed through
the deposition chamber 731, and the second circulating unit 620 is
installed to return the electrostatic chuck 600 that has been
separated from the substrate back to a starting position at the
loading unit 710.
FIG. 4 is a cross-sectional view of the first circulating unit 610
illustrated in FIG. 1 or 2, according to an embodiment of the
present invention. Referring to FIG. 4, the first circulating unit
610 according to the present embodiment includes a first carrier
611 to move the electrostatic chuck 600 on which the substrate 500
is disposed.
The first carrier 611 includes a first support 613, a second
support 614, a movement bar 615, and a first driving unit 616.
The first and second supports 613 and 614 are installed to extend
through one or more chambers, e.g., the first chamber 731 in the
deposition unit 730 in FIG. 1 and the first and second chambers 731
and 732 in the deposition unit 730 in FIG. 2.
The first support 613 is disposed vertically in the first chamber
731 and the second support 614 is disposed perpendicular to a lower
part of the first support 613 in the first chamber 631. (In FIGS. 4
and 5, the term "vertically" refers to a direction between a thin
film deposition assembly, such as thin film deposition assembly
100, and the substrate 500 and "horizontally" refers to a direction
perpendicular to such vertical direction and perpendicular to a
direction of motion of the substrate through the deposition unit
730. In more detail, the vertical direction and the horizontal
direction in FIGS. 4 and 5 correspond to the Z direction and the X
direction, respectively, as shown in FIGS. 8 to 16. In the current
embodiment illustrated in FIG. 4, the first and second supports 613
and 614 are disposed perpendicular to each other, but the present
invention is not limited thereto and they may be disposed in
various ways provided the second support 614 is disposed below the
first support 613.
The movement bars 615 are disposed respectively to move along upper
sides of the first support 613. At least one end of each of the
movement bars 615 is supported by the first support 613 and another
end of each of the movement bar 614 supports the edge of the
electrostatic chuck 600. The electrostatic chuck 600 may be moved
along the first support 613 while being fixedly supported by the
movement bars 615. The ends of the movement bars 615 which support
the electrostatic chuck 600 may be bent toward the first thin film
deposition assembly 100 so that the substrate 500 is located closer
to the first thin film deposition assembly 100.
The first driving unit 616 is included between the first support
613 and each of the movement bars 615 and moves the movement bars
615 along the first support 613. The first driving unit 616 may
include a plurality of rollers 617 to roll along ends of the first
supports 613. In this regard, the first support 613 may be in the
form of a rail extending in a direction perpendicular to the X and
Z directions as described above, or in other words, in a direction
perpendicular to the plane of the cross-sectional view of FIG. 5.
The first driving unit 616 applies a driving force to the movement
bars 615 to move along the first support 613. The driving force may
either be generated by the first driving unit 616 or be supplied
from a separate driving source (not shown). The type of the first
driving unit 616 is not limited provided the first driving unit 616
can move the rollers 617 and the movement bars 615.
FIG. 5 is a cross-sectional view of the second circulating unit 620
of FIG. 1 or 2, according to an embodiment of the present
invention. Referring to FIG. 5, the second circulating unit 610
according to the present embodiment includes a second carrier 621
to return the electrostatic chuck 600 from which the substrate 500
of FIG. 1 or 2 has been separated to a starting position adjacent
the loading unit 710.
The second carrier 621 includes a third support 623, a movement bar
615, and a plurality of first driving units 616.
The third support 623 extends in a similar manner to the first
support 613 of the first carrier 611. The third support 623
supports the movement bars 615 each having the first driving unit
616, and the electrostatic chuck 600 from which the substrate 500
has been separated is placed on the movement bars 615. The
constructions of the movement bars 615 and the first driving units
616 are as described above with reference to FIG. 4.
When the electrostatic chuck 600 is moved by the first and second
carriers 611 and 621, power should be supplied continuously to the
electrostatic chuck 600 even during movement. A system that
supplies power to the electrostatic chuck 600 during movement will
now be described in detail.
FIG. 6 is a cross-sectional view of a system that supplies power to
the electrostatic chuck 600 during movement, according to an
embodiment of the present invention. The electrostatic chuck 600
includes a body 601 having a supporting surface 605 that contacts
the substrate 500 to support a flat larger surface of the substrate
500. The electrode 602 is embedded into the body 601 in order to
apply an electrostatic force to the supporting surface 605. Also,
in the body 601, a plurality of power source holes are formed to
expose the electrode 602. Referring to FIG. 6, first and second
power source holes 603a and 603b are formed at different locations.
The first and second power source holes 603a and 603b may be
disposed apart from each other.
Referring to FIG. 6, the first and second power source holes 603a
and 603b may be respectively located at the tail and head of the
body 610, with respect to a movement direction in which the
electrostatic chuck is moved, as indicated by the arrows in FIG.
6.
In the current embodiment illustrated in FIG. 6, the electrostatic
chuck 600 is continuously powered on during movement by using a
power source plug 604a and a second power source plug 604b that are
respectively installed in the first and second chambers 731 and 732
which are also illustrated in FIG. 2. Accordingly, the
electrostatic chuck 600 may be powered on even if it is moved
between adjacent chambers.
The first power source plug 604a is installed at location upstream
in the path marked by the arrow. In the current embodiment
illustrated in FIG. 6, the first power source plug 604a is disposed
in the first chamber 731. The first power source plug 604a may be
installed to be attachable to and detachable from the first power
source hole 603a or the second power source hole 603b. In the
current embodiment illustrated in FIG. 6, the first power source
plug 604a is inserted into the first power source hole 603a but the
present invention is not limited thereto. Alternatively, the first
power source plug 604a installed at an upstream location in the
path may be inserted into the second power source hole 603b located
at a downstream portion of the body 610 moving along the path.
The second power source plug 604b is installed at a downstream
location in the path. The second power source plug 604b is
illustrated as being located in the second chamber 732 in the
embodiment illustrated in FIG. 6. The second power source plug 604b
may be installed to be attachable to and detachable from the first
power source hole 603a or the second power source hole 603b. In the
current embodiment illustrated in FIG. 6, the second power source
plug 604b is inserted into the second power source hole 603b but
the present invention is not limited thereto. Alternatively, the
second power source plug 604b installed at the downstream of the
path may be inserted into the first power source hole 603a located
at the tail of the electrostatic chuck 600.
The first and second power source plugs 604a and 604b may be
respectively installed to be movable within the first and second
chambers 731 and 732. Accordingly, the first power source plug 604a
is inserted into the first power source hole 603a to supply power
to the electrode 602 while the electrostatic chuck 600 is located
within the first chamber 731, and the second power source plug 604b
is inserted into the second power source hole 603b to supply power
to the electrode 602 while the electrostatic chuck 600 is located
within the second chamber 732. A chamber door 733 is installed
between the first and second chambers 731 and 732. When the
electrostatic chuck 600 passes through the chamber door 733, the
first power source plug 604a is separated from the first power
source hole 603a at the moment or after the second power source
plug 604b is inserted into the second power source hole 603b as
illustrated in FIG. 6, thereby preventing an interruption in supply
of power to the electrode 602.
In the current embodiment illustrated in FIG. 6, the first and
second power source plugs 604a and 604b are respectively installed
in the first and second chambers 731 and 732 but the present
invention is not limited thereto and the first and second power
source plugs 604a and 604b may be installed at different locations
in the first chamber 731 illustrated in FIG. 1. In this case, when
the electrostatic chuck 600 passes through the chamber door 733,
the first power source plug 604a should also be separated from the
first power source hole 603a at the moment or after the second
power source plug 604b is inserted into the second power source
hole 603b as illustrated in FIG. 6, thereby preventing an
interruption in supply of power to the electrode 602.
Alternatively, the first and second power source holes 603a and
603b may be located in a position other than the tail and head of
the body 601 of the electrostatic chuck 600, provided that the
first and second power source holes 603a and 603b are located apart
from each other. In this case, when the electrostatic chuck 600
passes through the chamber door 733, the first power source plug
604a should also be separated from the first power source hole 603a
at the moment or after the second power source plug 604b is
inserted into the second power source hole 603b as illustrated in
FIG. 6, thereby preventing an interruption in supply of power to
the electrode 602.
FIG. 7 is a cross-sectional view of a system that supplies power to
the electrostatic chuck 600 during movement, according to another
embodiment of the present invention. In the current embodiment, the
electrostatic chuck 600 is moved from the transport chamber 716 to
the first inversion chamber 718 and finally, to the first chamber
731.
Referring to FIG. 7, a third power source hole 603c, a fourth power
source hole 603d, and a fifth power source hole 603e are formed at
different locations on a body 601 of the electrostatic chuck 600. A
third power source plug 604c, a fourth power source plug 604d, and
a fifth power source plug 604e are installed in the first transport
chamber 716, the first inversion chamber 718, and the first chamber
731, respectively. The fourth power source plug 604d is installed
in the first inversion robot 719.
The electrostatic chuck 600 is moved while the third power source
plug 604c is inserted into the third power source hole 603c in the
transport chamber 716. Even after the electrostatic chuck 600 is
partially or completely moved from the transport chamber 716 to the
first inversion chamber 718, the third power source plug 604c is
maintained in the third power source hole 603c, thereby
continuously supplying power to the electrode 602. In the first
inversion chamber 718, the third power source plug 604c is
separated from the third power source hole 603c at the moment or
after the fourth power source plug 604d installed in the first
inversion robot 719 is inserted into the fourth power source hole
603d. The first inversion robot 719 turns the electrostatic chuck
600 over in the first inversion chamber 718 so that the substrate
500 placed on the electrostatic chuck 600 is turned upside down,
and the electrostatic chuck 600 enters into the first chamber 731.
Then, the fourth power source plug 604d is separated from the
fourth power source hole 603d at the moment or after the fifth
power source plug 604e is inserted into the fifth power source hole
603e in the first chamber 731.
Accordingly, in the current embodiment, the electrostatic chuck 600
can be powered continuously even while the electrostatic chuck 600
is moved by a carrier.
Next, the first thin film deposition assembly 100 disposed in the
first chamber 731 will be described.
FIG. 8 is a schematic perspective view of a thin film deposition
assembly 100 according to an embodiment of the present invention.
FIG. 9 is a schematic sectional side view of the thin film
deposition assembly 100 of FIG. 8. FIG. 10 is a schematic sectional
plan view of the thin film deposition assembly 100 of FIG. 8.
Referring to FIGS. 8 to 10, the thin film deposition assembly 100
includes a deposition source 110, a deposition source nozzle unit
120, and a patterning slit sheet 150.
Specifically, it is desirable to maintain the first chamber 731 of
FIG. 1 in a high-vacuum state as in a deposition method using a
fine metal mask (FMM) so that a deposition material 115 emitted
from the deposition source 110 may be deposited onto a substrate
400 in a desired pattern via the deposition source nozzle unit 120
and the patterning slit sheet 150. In addition, the temperature of
the patterning slit sheet 150 should be sufficiently lower than
that of the deposition source 110. In this regard, the temperature
of the patterning slit sheet 150 may be about 100.degree. C. or
less. The temperature of the patterning slit sheet 150 should be
sufficiently low so as to minimize thermal expansion of the
patterning slit sheet 150.
The substrate 500, which is a deposition target, is disposed in the
first chamber 731. The substrate 500 may be a substrate for flat
panel displays. A large substrate, such as a mother glass, for
manufacturing a plurality of flat panel displays, may be used as
the substrate 500. Other substrates may also be employed. The
substrate is affixed to the electrostatic chuck 600 as describe
above.
In the current embodiment, deposition may be performed while the
substrate 500 or the thin film deposition assembly 100 is moved
relative to the other. Herein, where it is stated that the
substrate or thin film deposition assembly is moved relative to the
other, it is to be understood that such statement encompasses an
embodiment in which only the substrate is moved and the thin film
deposition assembly remains stationary, an embodiment in which only
the thin film deposition assembly is moved and the substrate
remains stationary and an embodiment in which both the thin film
deposition assembly and the substrate are moved.
In particular, in the conventional FMM deposition method, the size
of the FMM should be equal to the size of a substrate. Thus, the
size of the FMM has to be increased when larger substrates are
used. However, it is difficult to manufacture a large FMM and to
extend an FMM to be accurately aligned with a pattern.
In order to overcome this problem, in the thin film deposition
assembly 100 according to the current embodiment, deposition may be
performed while the thin film deposition assembly 100 or the
substrate 500 is moved relative to the each other. In more detail,
deposition may be continuously performed while the substrate 500,
which is disposed such as to face the thin film deposition assembly
100, is moved in a Y-axis direction. That is, deposition is
performed in a scanning manner while the substrate 500 is moved in
a direction of arrow A in FIG. 8.
In the thin film deposition assembly 100 according to the current
embodiment, the patterning slit sheet 150 may be significantly
smaller than an FMM used in a conventional deposition method. That
is, in the thin film deposition assembly 100 according to the
current embodiment, deposition is continuously performed, i.e., in
a scanning manner while the substrate 500 is moved in the Y-axis
direction. Thus, the lengths of the patterning slit sheet 950 in
the X-axis and Y-axis directions may be significantly less than the
lengths of the substrate 500 in the X-axis and Y-axis directions.
As described above, since the patterning slit sheet 150 may be
formed to be significantly smaller than an FMM used in a
conventional deposition method, it is relatively easy to
manufacture the patterning slit sheet 150. That is, using the
patterning slit sheet 150, which is smaller than an FMM used in a
conventional deposition method, is more convenient in all
processes, including etching and other subsequent processes, such
as precise extension, welding, moving, and cleaning processes, than
using the larger FMM. This is more advantageous for a relatively
large display device.
The deposition source 110 that contains and heats the deposition
material 115 is disposed in an opposite side of the thin film
deposition assembly 100 from a side in which the substrate 500 is
disposed. The deposition material 115 that is vaporized in the
deposition source 110 is deposited onto the substrate 500.
In particular, the deposition source 110 includes a crucible 112
that is filled with the deposition material 115, and a heater (not
shown) that heats the crucible 112 to vaporize the deposition
material 115, which is contained in the crucible 112, such that the
deposition material 115 is directed towards the deposition source
nozzle unit 120. The cooling block 111 prevents heat generated from
the crucible 112 from being conducted to the outside, i.e., the
first chamber 731. The heater may be incorporated in the cooling
block 111.
The deposition source nozzle unit 120 is disposed at a side of the
deposition source 110, and in particular, at the side of the
deposition source 110 facing the substrate 500. The deposition
source nozzle unit 120 includes a plurality of deposition source
nozzles 121 in the Y-axis direction, i.e., a scanning direction of
the substrate 500. The plurality of deposition source nozzles 121
may be arranged at equal intervals. The deposition material 115
that is vaporized in the deposition source 110, passes through the
deposition source nozzle unit 120 towards the substrate 500. As
described above, when the deposition source nozzle unit 120
includes the plurality of deposition source nozzles 121 arranged in
the Y-axis direction, that is, the scanning direction of the
substrate 500, the size of a pattern formed of the deposition
material 115 discharged through a plurality of patterning slits 151
of the patterning slit sheet 150 is affected by the size of each of
the deposition source nozzles 121 (since there is only one line of
deposition nozzles in the X-axis direction), thereby preventing a
shadow zone from being formed on the substrate 500. In addition,
since the plurality of deposition source nozzles 121 are arranged
in the scanning direction of the substrate 500, even there is a
difference in flux between the deposition source nozzles 121, the
difference may be compensated for and deposition uniformity may be
maintained constantly.
The patterning slit sheet 150 and a frame 155 are disposed between
the deposition source 110 and the substrate 500. The frame 155 may
be formed in a shape similar to a window frame. The patterning slit
sheet 150 is bound inside the frame 155. The patterning slit sheet
150 includes the plurality of patterning slits 151 arranged in the
X-axis direction. The deposition material 115 that is vaporized in
the deposition source 110, passes through the deposition source
nozzle unit 120 and the patterning slit sheet 150 towards the
substrate 500. The patterning slit sheet 150 may be manufactured by
etching, which is the same method as used in a conventional method
of manufacturing an FMM, and in particular, a striped FMM. In this
regard, the total number of the patterning slits 151 may be greater
than the total number of the deposition source nozzles 121.
In addition, the deposition source 110 (and the deposition source
nozzle unit 120 coupled to the deposition source 110) may be
disposed to be spaced apart from the patterning slit sheet 150 by a
predetermined distance. The deposition source 110 (and the
deposition source nozzle unit 120 coupled to the deposition source
110) may be connected to the patterning slit sheet 150 by
connection members 135. That is, the deposition source 110, the
deposition source nozzle unit 120, and the patterning slit sheet
150 may be integrally formed as one body by being connected to one
another via the connection members 135. The connection members 135
may guide the deposition material 151, which is discharged through
the deposition source nozzles 121, to move straight and not to
deviate in the X-axis direction.
Referring to FIG. 8, the connection members 135 are formed on left
and right sides of the deposition source 110, the deposition source
nozzle unit 120, and the patterning slit sheet 150 to guide the
deposition material 915 not to deviate in the X-axis direction;
however, aspects of the present invention are not limited thereto.
For example, the connection member 135 may be formed in the form of
a sealed box to guide flow of the deposition material 915 both in
the X-axis and Y-axis directions.
As described above, the thin film deposition assembly 100 according
to the current embodiment performs deposition while being moved
relative to the substrate 500. In order to move the thin film
deposition assembly 100 relative to the substrate 500, the
patterning slit sheet 150 is spaced apart from the substrate 500 by
a predetermined distance.
More specifically, in a conventional deposition method using an
FMM, deposition is performed with the FMM in close contact with a
substrate in order to prevent formation of a shadow zone on the
substrate. However, when the FMM is used in close contact with the
substrate, the contact may cause defects. In addition, in the
conventional deposition method, the size of the mask has to be the
same as the size of the substrate since the mask cannot be moved
relative to the substrate. Thus, the size of the mask has to be
increased as display devices become larger but it is not easy to
manufacture such a large mask.
In order to overcome this problem, in the thin film deposition
assembly 100 according to the current embodiment, the patterning
slit sheet 150 is disposed to be spaced apart from the substrate
500 by a predetermined distance.
As described above, according to aspects of the present invention,
a mask may be formed to be smaller than a substrate, and deposition
may be performed while the mask is moved relative to the substrate.
Thus, the mask can be easily manufactured. In addition, it is
possible to prevent occurrence of defects caused by the contact
between the substrate and the mask. Furthermore, since it is
unnecessary to use the mask in close contact with the substrate
during a deposition process, the manufacturing time may be
reduced.
FIG. 11 is a schematic perspective view of a thin film deposition
assembly 100 according to another embodiment of the present
invention. Referring to FIG. 10, the thin film deposition assembly
100 according to the current embodiment includes a deposition
source 110, a deposition source nozzle unit 120, and a patterning
slit sheet 150. The deposition source 110 includes a crucible 112
that is filled with a deposition material 115, and a cooling block
111 including a heater that heats the crucible 112 to vaporize the
deposition material 115 that is contained in the crucible 112, so
as to move the vaporized deposition material 115 to the deposition
source nozzle unit 120. The deposition source nozzle unit 120,
which has a planar shape, is disposed at a side of the deposition
source 110, and includes a plurality of deposition source nozzles
121 arranged in the Y-axis direction. The patterning slit sheet 150
and a frame 155 are further disposed between the deposition source
110 and a substrate 500. The patterning slit sheet 150 includes a
plurality of patterning slits 151 arranged in the X-axis direction.
In addition, the deposition source 110 and the deposition source
nozzle unit 120 may be connected to the patterning slit sheet 150
by first connection members 135.
In the current embodiment, the plurality of deposition source
nozzles 121 formed on the deposition source nozzle unit 120 are
tilted at a predetermined angle, unlike the embodiment described
with reference to FIG. 8. In particular, the deposition source
nozzles 121 may include deposition source nozzles 121a and 121b
arranged in respective rows. The deposition source nozzles 121a and
121b may be arranged in respective rows to alternate in a zigzag
pattern. The deposition source nozzles 121a and 121b may be tilted
at a predetermined angle on an X-Z plane.
In the current embodiment of the present invention, the deposition
source nozzles 121a and 121b are arranged to tilt at a
predetermined angle toward each other. The deposition source
nozzles 121a in a first row and the deposition source nozzles 121b
in a second row may tilt at the predetermined angle to face each
other. In other words, the deposition source nozzles 121a of the
first row in a left part of the deposition source nozzle unit 121
may tilt to face a right side portion of the patterning slit sheet
150, and the deposition source nozzles 121b of the second row in a
right part of the deposition source nozzle unit 121 may tilt to
face a left side portion of the patterning slit sheet 150.
Owing to the structure of the thin film deposition assembly 100
according to the current embodiment, the deposition of the
deposition material 115 may be adjusted to lessen a thickness
variation between the center and end portions of the substrate 500,
thereby improving thickness uniformity of a deposition film.
Moreover, utilization efficiency of the deposition material 115 may
also be improved.
FIG. 12 is a schematic perspective view of a thin film deposition
apparatus according to another embodiment of the present invention.
Referring to FIG. 13, the thin film deposition apparatus according
to the current embodiment includes a plurality of thin film
deposition assemblies, each of which has the structure of the thin
film deposition apparatus 100 illustrated in FIGS. 8 through 10. In
other words, the thin film deposition apparatus according to the
current embodiment may include a multi-deposition source that
simultaneously discharges deposition materials for forming a red
("R") emission layer, a green ("G") emission layer, and a blue
("B") emission layer.
In particular, the thin film deposition apparatus according to the
current embodiment includes a first thin film deposition assembly
100, a second thin film deposition assembly 200, and a third thin
film deposition assembly 300. The first thin film deposition
assembly 100, the second thin film deposition assembly 200, and the
third thin film deposition assembly 300 have the same structure as
the thin film deposition assembly 100 described with reference to
FIGS. 8 through 10, and thus a detailed description thereof will
not be repeated here.
Deposition sources of the first, second and third thin film
deposition assemblies 100, 200 and 300 may contain different
deposition materials, respectively. For example, the first thin
film deposition assembly 100 may contain a deposition material for
forming the R emission layer, the second thin film deposition
assembly 200 may contain a deposition material for forming the G
emission layer, and the third thin film deposition assembly 300 may
contain a deposition material for forming the B emission layer.
In a conventional method of manufacturing an organic light-emitting
display device, a separate chamber and mask are used to form each
color emission layer. However, when the thin film deposition
apparatus according to the current embodiment is used, the R
emission layer, the G emission layer and the B emission layer may
be formed at the same time with a single multi-deposition source.
Thus, it is possible to sharply reduce a time needed to manufacture
an organic light-emitting display device. Furthermore, the organic
light-emitting display device may be manufactured with fewer
chambers, so that equipment costs are also markedly reduced. In
particular, thin film deposition assemblies 100, 200, 300 may be
located in a single deposition chamber 731 as shown in FIG. 1 or in
separate deposition chambers 731 and 732 housed in a single
deposition unit 730 as shown in FIG. 2 through which a circulating
unit 610 conveys an electrostatic chuck 600 to which a substrate
500 is affixed.
Although not illustrated, patterning slit sheets of the first,
second, and third thin film deposition assemblies 100, 200, and 300
may be arranged to be offset by a predetermined distance with
respect to each other, so that deposition regions corresponding to
the patterning slit sheets do not to overlap with one another on a
substrate 500. In other words, if the first thin film deposition
assembly 100, the second thin film deposition assembly 200, and the
third thin film deposition assembly 200 are used to deposit the R
emission layer, the G emission layer and the B emission layer,
respectively, then patterning slits of the first, second, and third
thin film deposition assemblies 100, 200, and 300 are arranged not
to be aligned with respect to each other, in order to form the R
emission layer, the G emission layer and the B emission layer in
different regions of the substrate 500.
In addition, the deposition materials for forming the R emission
layer, the G emission layer, and the B emission layer may be
vaporized at different temperatures. Therefore, the temperatures of
the deposition sources of the respective first, second, and third
thin film deposition assemblies 100, 200, and 300 may be set to be
different.
Although the thin film deposition apparatus according to the
current embodiment includes three thin film deposition assemblies,
the present invention is not limited thereto. That is, a thin film
deposition apparatus according to another embodiment of the present
invention may include a plurality of thin film deposition
assemblies, each of which contains a different deposition material.
For example, a thin film deposition apparatus according to another
embodiment of the present invention may include five thin film
deposition assemblies respectively containing materials for an R
emission layer, a G emission layer, a B emission layer, an
auxiliary layer R' of the R emission layer, and an auxiliary layer
G' of the G emission layer.
As described above, a plurality of thin films may be formed at the
same time with a plurality of thin film deposition assemblies, and
thus manufacturing yield and deposition efficiency are improved. In
addition, the overall manufacturing process is simplified and the
manufacturing costs are reduced.
FIG. 13 is a schematic perspective view of a thin film deposition
apparatus 100 according to another embodiment of the present
invention. FIG. 14 is a schematic sectional side view of the thin
film deposition apparatus 100. FIG. 15 is a schematic sectional
plan view of the thin film deposition apparatus 100.
Referring to FIGS. 13 to 15, the thin film deposition assembly 100
according to the current embodiment includes a deposition source
110, a deposition source nozzle unit 120, a barrier plate assembly
130, and a patterning slit sheet 150.
Although a chamber is not illustrated in FIGS. 13 through 15 for
convenience of explanation, all the components of the thin film
deposition apparatus 100 may be disposed within a chamber that is
maintained at an appropriate degree of vacuum. The chamber is
maintained at an appropriate vacuum in order to allow a deposition
material 115 to move in a substantially straight line through the
thin film deposition apparatus 100.
A substrate 500 which is a deposition target is moved in the
chamber by an electrostatic chuck 600. The substrate 500 may be a
substrate for flat panel displays. A large substrate, such as a
mother glass, for manufacturing a plurality of flat panel displays,
may be used as the substrate 500.
In the current embodiment of the present invention, the substrate
500 or the thin film deposition assembly 100 is moved relative to
the other. In particular, the substrate 500 may be moved with
respect to the thin film deposition assembly 100 in a direction
marked by an arrow A.
In the thin film deposition assembly 100 according to the current
embodiment (and similar to the thin film deposition assembly 100 of
FIG. 8), the patterning slit sheet 150 may be significantly smaller
than an FMM used in a conventional deposition method. That is, in
the thin film deposition assembly 100 according to the current
embodiment, deposition is continuously performed, i.e., in a
scanning manner while the substrate 500 is moved in the Y-axis
direction. Thus, if the lengths of the patterning slit sheet 150
and the substrate 500 are the same in the X-axis direction, then a
length of the pattering slit sheet 150 may be far less than a
length of the substrate 500 in the Y-axis direction. However, even
if the length of the patterning slit sheet 150 in the X-axis
direction is less than the length of the substrate 500 in the
X-axis direction, deposition may be performed over an entire
surface of the substrate 500 since the manner in which the
substrate 500 or the thin film deposition assembly 100 is moved
relative to the other may be adapted.
As described above, since the patterning slit sheet 150 may be
formed to be significantly smaller than an FMM used in a
conventional deposition method, it is relatively easy to
manufacture the patterning slit sheet 150. That is, using the
patterning slit sheet 150, which is smaller than an FMM used in a
conventional deposition method, is more convenient in all
processes, including etching and subsequent other processes, such
as precise extension, welding, moving, and cleaning processes, than
using the larger FMM. Accordingly, the use of the patterning slit
sheet 150 is more advantageous than the use of a conventional FMM
for manufacturing a relatively large display device.
In the first chamber 731 of FIG. 1, the deposition source 110 that
contains and heats the deposition material 115 is disposed to face
the substrate 500.
The deposition source 110 according to the embodiment of FIGS. 12
through 14 includes a crucible 112 filled with the deposition
material 115, and a cooling block 111 disposed to cover sides of
the crucible 112. The cooling block 111 prevents heat generated
from the crucible 112 from being conducted to the outside, i.e.,
toward the inside of the first chamber 731. The cooling block 111
includes a heater (not shown) that heats the crucible 112.
The deposition source nozzle unit 120 is disposed at a side of the
deposition source 110, and in particular, at the side of the
deposition source 110 facing the substrate 500. The deposition
source nozzle unit 120 includes a plurality of deposition source
nozzles 121 arranged in the X-axis direction. The plurality of
deposition source nozzles 121 may be arranged at equal intervals.
The deposition material 115 that is vaporized in the deposition
source 110, passes through the deposition source nozzles 121 of the
deposition source nozzle unit 120 towards the substrate 500.
The barrier plate assembly 130 is disposed at a side of the
deposition source nozzle unit 120 between the deposition source
nozzle unit 120 and the patterning slit sheet 150. The barrier
plate assembly 130 includes a plurality of barrier plates 131, and
a barrier plate frame 132 that covers sides of the barrier plates
131. The plurality of barrier plates 131 may be arranged parallel
to each other in X-axis direction. The plurality of barrier plates
131 may be arranged at equal intervals. In addition, the barrier
plates 131 may be arranged parallel to an Y-Z plane in FIG. 13 and
may have a rectangular shape. The plurality of barrier plates 131
arranged as described above partition a deposition space between
the deposition source nozzle unit 120 and the patterning slit sheet
150 into a plurality of sub-deposition spaces S. That is, in the
thin film deposition assembly 100 according to the current
embodiment, as illustrated in FIG. 15, the deposition space is
divided by the barrier plates 131 into the sub-deposition spaces S
that respectively correspond to the deposition source nozzles 121
through which the deposition material 115 is discharged.
The barrier plates 131 may be respectively disposed between
adjacent deposition source nozzles 121. In other words, each of the
deposition source nozzles 121 may be disposed between two adjacent
barrier plates 131. The deposition source nozzles 121 may be
respectively located at the midpoint between two adjacent barrier
plates 131. However, the present invention is not limited thereto
and a plurality of the deposition source nozzles 121 may be
disposed between two adjacent barrier plates 131. In this case, a
plurality of the deposition source nozzles 121 may be respectively
located at the midpoint between two adjacent barrier plates
131.
As described above, since the barrier plates 131 partition the
space between the deposition source nozzle unit 120 and the
patterning slit sheet 150 into the plurality of sub-deposition
spaces S, the deposition material 115 discharged through each of
the deposition source nozzles 121 is not mixed with the deposition
material 115 discharged through the other deposition source nozzles
121, and passes through patterning slits 151 so as to be deposited
on the substrate 500. In other words, the barrier plates 131 guide
the deposition material 115, which is discharged through the
deposition source nozzles 121, to move straight, not to deviate in
the X-axis direction.
As described above, the deposition material 115 is forced to move
straight by installing the barrier plates 131, so that a smaller
shadow zone may be formed on the substrate 500 compared to a case
where no barrier plates are installed. Thus, the thin film
deposition assembly 100 and the substrate 500 can be spaced apart
from each other by a predetermined distance. This will be described
later in detail.
The barrier plate frame 132, which covers sides of the barrier
plates 131, maintains the positions of the barrier plates 131, and
guides the deposition material 115, which is discharged through the
deposition source nozzles 121, and prevents deviation of the
deposition material 115 in the Y-axis direction.
The deposition source nozzle unit 120 and the barrier plate
assembly 130 may be disposed apart from each other by a
predetermined distance. Accordingly, heat emitted from the
deposition source 110 may be prevented from being conducted to the
barrier plate assembly 130. However, the present invention is not
limited thereto. That is, if an appropriate insulating device is
installed between the deposition source nozzle unit 120 and the
barrier plate assembly 130, the deposition source nozzle unit 120
and the barrier plate assembly 130 may be combined to contact each
other.
In addition, the barrier plate assembly 130 may be constructed to
be attachable to and detachable from the thin film deposition
assembly 100. In order to overcome these problems, in the thin film
deposition assembly 100 according to the current embodiment, the
deposition space is enclosed by using the barrier plate assembly
130, so that the deposition material 115 that is not deposited on
the substrate 500 is mostly deposited within the barrier plate
assembly 130. Thus, since the barrier plate assembly 130 is
constructed to be attachable to and detachable from the thin film
deposition assembly 100, when a large amount of the deposition
material 115 is present on surfaces of the barrier plate assembly
130 after a long deposition process, the barrier plate assembly 130
may be detached from the thin film deposition assembly 100 and then
placed in a separate deposition material recycling apparatus in
order to recover the deposition material 115. Due to the structure
of the thin film deposition assembly 100 according to the present
embodiment, a reuse rate of the deposition material 115 is
increased, so that the deposition efficiency is improved, and thus
the manufacturing costs are reduced.
The patterning slit sheet 150 and a frame 155 in which the
patterning slit sheet 150 is bound are disposed between the
deposition source 110 and the substrate 500. The frame 155 may be
formed in a lattice shape, similar to a window frame. The
patterning slit sheet 150 is bound inside the frame 155. The
patterning slit sheet 150 includes a plurality of patterning slits
151 arranged in the X-axis direction. Each of the patterning slits
151 extends in the Y-axis direction. The deposition material 115
that is vaporized in the deposition source 110, passes through the
deposition source nozzles 121 towards the substrate 500.
The patterning slit sheet 150 may be embodied as a metal thin plate
and is bound in the frame 155 when extended. The patterning slits
151 are formed in stripes in the patterning slit sheet 150 by using
an etching process.
In the thin film deposition assembly 100 according to the current
embodiment, the total number of the patterning slits 151 is greater
than the total number of the deposition source nozzles 121. In
addition, there may be a greater number of patterning slits 151
than deposition source nozzles 121 disposed between two adjacent
barrier plates 131. The number of the patterning slits 151 may
correspond to the number of deposition patterns to be formed in the
substrate 500.
In addition, the barrier plate assembly 130 and the patterning slit
sheet 150 may be disposed apart from each other by a predetermined
distance. Alternatively, the barrier plate assembly 130 and the
patterning slit sheet 150 may be connected by second connection
members 133. The temperature of the barrier plate assembly 130 may
increase to 100.degree. C. or higher due to the deposition source
110 whose temperature is high. Thus, in order to prevent the heat
of the barrier plate assembly 130 from being conducted to the
patterning slit sheet 150, the barrier plate assembly 130 and the
patterning slit sheet 150 may be disposed apart from each other by
a predetermined distance.
As shown in FIGS. 13 and 15, the thin film deposition assembly 100
may also include one or more alignment devices 170 and one or more
alignment targets 159 and 501 that assist in alignment of the
patterning slit sheet 150 with respect to the substrate 500.
As described above, the thin film deposition assembly 100 according
to the current embodiment performs deposition while the substrate
500 and the thin film deposition assembly 100 are moved relative to
the other. In order to move the thin film deposition assembly 100
or the substrate 500 relative to the other, the patterning slit
sheet 150 is spaced apart from the substrate 500 by a predetermined
distance. In addition, in order to prevent the formation of a
relatively large shadow zone on the substrate 500 when the
patterning slit sheet 150 and the substrate 400 are separated from
each other, the barrier plates 131 are arranged between the
deposition source nozzle unit 120 and the patterning slit sheet 150
to force the deposition material 115 to move in a straight
direction. Thus, the size of the shadow zone formed on the
substrate 500 is sharply reduced.
In particular, in a conventional deposition method using an FMM,
deposition is performed with the FMM in close contact with a
substrate in order to prevent formation of a shadow zone on the
substrate. However, when the FMM is used in close contact with the
substrate, patterns that have been formed on the substrate may be
scratched due to the contact, thereby causing defects. In addition,
in the conventional deposition method, the size of the mask has to
be the same as the size of the substrate since the mask cannot be
moved relative to the substrate. Thus, the size of the mask has to
be increased as display devices become larger. However, it is not
easy to manufacture such a large mask.
In order to overcome this problem, in the thin film deposition
assembly 100 according to the current embodiment, the patterning
slit sheet 150 is disposed apart from the substrate 500 by a
predetermined distance. The formation of a desirable deposition
pattern may be facilitated by installing the barrier plates 131 to
reduce the size of the shadow zone formed on the substrate 500.
In the current embodiment, the patterning slit sheet 150 is formed
to be smaller than the substrate 500 and to be moved relative to
the substrate 500 as described above. Thus, a larger mask does not
need to be manufactured unlike in a conventional deposition method
using an FMM. In addition, defects caused due to the contact
between a substrate and an FMM, which occurs in the conventional
deposition method, are prevented since the substrate 500 and the
patterning slit sheet 150 are disposed apart from each other. In
addition, since it is unnecessary to dispose the patterning slit
sheet 150 in close contact with the substrate 500 during a
deposition process, the manufacturing speed may be improved.
A plurality of the thin film deposition assemblies 100 according to
the current embodiment may be arranged consecutively within the
first chamber 731 as illustrated in FIG. 1. In this case, different
deposition materials may be deposited on the plurality of the thin
film deposition assemblies 100, respectively, and patterning slits
formed in the plurality of the thin film deposition assemblies 100
may have different patterns from one another. Accordingly, it is
possible to simultaneously form a plurality of layers, for example,
red, green, and blue pixels.
As shown in FIG. 12, the thin film deposition assembly 100 may also
include one or more alignment devices 170 and one or more alignment
targets 159 that assist in alignment of the patterning slit sheet
150 with respect to the substrate 100.
FIG. 16 is a schematic perspective view of a modified example of
the thin film deposition assembly 100 of FIG. 13.
Referring to FIG. 16, the thin film deposition assembly 100
according to the current embodiment includes a deposition source
110, a deposition source nozzle unit 120, a first barrier plate
assembly 130, a second barrier plate assembly 140, and a patterning
slit sheet 150.
Although a chamber is not illustrated in FIG. 16 for convenience of
explanation, all the components of the thin film deposition
assembly 100 may be disposed within a chamber that is maintained at
an appropriate degree of vacuum.
The chamber is maintained at an appropriate vacuum in order to
allow a deposition material to move in a substantially straight
line through the thin film deposition assembly 100.
The substrate 500, which constitutes a target on which a deposition
material 115 is to be deposited, is disposed in the chamber. The
deposition source 115 that contains and heats the deposition
material 115 is disposed in an opposite side of the chamber to the
side in which the substrate 500 is disposed.
Detailed structures of the deposition source 110 and the patterning
slit sheet 150 are the same as those of FIG. 13 and thus, detailed
descriptions thereof will not be repeated here. The first barrier
plate assembly 130 is the same the barrier plate assembly 130 of
FIG. 13 and thus, a detailed description thereof will not be
repeated here.
The second barrier plate assembly 140 is disposed at a side of the
first barrier plate assembly 130. The second barrier plate assembly
140 includes a plurality of second barrier plates 141 and a second
barrier plate frame 141 that constitutes an outer plate of the
second barrier plates 142.
The plurality of second barrier plates 141 may be arranged parallel
to each other at equal intervals in the X-axis direction. In
addition, each of the second barrier plates 141 may be formed to
extend in the YZ plane in FIG. 14, i.e., perpendicular to the
X-axis direction.
The plurality of first barrier plates 131 and second barrier plates
141 arranged as described above partition the space between the
deposition source nozzle unit 120 and the patterning slit sheet
150. The deposition space is divided by the first barrier plates
131 and the second barrier plates 141 into sub-deposition spaces
that respectively correspond to the deposition source nozzles 121
through which the deposition material 115 is discharged.
The second barrier plates 141 may be disposed to correspond to the
first barrier plates 131. The second barrier plates 141 may be
respectively disposed to be parallel to and to be on the same plane
as the first barrier plates 131. Each pair of the corresponding
first and second barrier plates 131 and 141 may be located on the
same plane. Although the first barrier plates 131 and the second
barrier plates 141 are respectively illustrated as having the same
thickness in the Y-axis direction, aspects of the present invention
are not limited thereto. The second barrier plates 141, which may
be accurately aligned with the patterning slit sheet 151, may be
formed to be relatively thin, whereas the first barrier plates 131,
which do not need to be precisely aligned with the patterning slit
sheet 151, may be formed to be relatively thick. This makes it
easier to manufacture the thin film deposition assembly 100.
FIG. 17 is a cross-sectional view of an active matrix organic
light-emitting display device manufactured using a thin film
deposition apparatus according to an embodiment of the present
invention. It is to be understood that where is stated herein that
one layer is "formed on" or "disposed on" a second layer, the first
layer may be formed or disposed directly on the second layer or
there may be intervening layers between the first layer and the
second layer. Further, as used herein, the term "formed on" is used
with the same meaning as "located on" or "disposed on" and is not
meant to be limiting regarding any particular fabrication process.
Referring to FIG. 17, the active matrix organic light-emitting
display device is formed on a substrate 30. The substrate 30 may be
formed of a transparent material, e.g., glass, plastic, or metal.
An insulation layer 31, such as buffer layer, may be formed on the
substrate 30.
A thin film transistor (TFT) 40, a capacitor 50, and an organic
light-emitting device 60 are disposed on the insulating layer 31 as
illustrated in FIG. 16.
A semiconductor active layer 41 is formed in a predetermined
pattern on the insulating layer 31. The semiconductor active layer
41 is covered by a gate insulating layer 32. The semiconductor
active layer 41 may be embodied as a p type or n type semiconductor
layer.
A gate electrode 42 of the TFT 40 is formed on a part of the gate
insulating layer 32 which corresponds to the active layer 41. Also,
an interlayer insulating layer 33 is formed to cover the gate
electrode 42. After the interlayer insulating layer 33 is formed, a
plurality of contact holes are formed by etching the gate
insulating layer 32 and the interlayer insulating layer 33
according to an etching process, e.g., a dry etching process,
thereby partially exposing the active layer 41.
A source/drain electrode 43 is formed on the interlayer insulating
layer 33 to contact the parts of the active layer 41 exposed via
the contact holes. Next, a protective layer 34 is formed to cover
the source/drain electrode 43, and the drain electrode 43 is
partially exposed using an etching process. An insulating layer may
further be formed on the protective layer 34 in order to planarize
the protective layer 34.
The organic light-emitting device 60 emits red, green, or blue
light depending on the flow of current in order to display image
information, and a first electrode 61 is formed on the protective
layer 34. The first electrode 61 is electrically connected to the
drain electrode 43 of the TFT 40.
A pixel defined layer 35 is formed to cover the first electrode 61.
After a predetermined aperture 64 is formed in the pixel defined
layer 35, an organic light-emitting layer 63 is formed in a region
defined by the aperture 64. A second electrode 62 is formed on the
organic light-emitting layer 63.
The pixel defined layer 35 is used to define a plurality of pixels.
The pixel defined layer 35 is formed of an organic material to
planarize a surface of a layer on which the first electrode 61 is
disposed, and in particular, a surface of the protective layer
34.
The first electrode 61 and the second electrode 62 are insulated
from each other, and respectively apply voltages of opposite
polarities to the organic light-emitting layer 63 to induce light
emission in the organic light-emitting layer 63.
The organic light-emitting layer 63 may include a low-molecular
weight organic layer or a high-molecular weight organic layer. When
a low-molecular weight organic layer is used as the organic
light-emitting layer 63, the organic light-emitting layer 63 may
have a single or multi-layer structure including at least one
selected from the group consisting of a hole injection layer (HIL),
a hole transport layer (HTL), an emission layer (EML), an electron
transport layer (ETL), an electron injection layer (EIL), etc.
Examples of available organic materials include copper
phthalocyanine (CuPc),
N,N'-di(naphthalene-1-yl)-N,N'-diphenyl-benzidine (NPB),
tris-8-hydroxyquinoline aluminum (Alq3), etc. These low-molecular
weight organic layers may be formed according to a vacuum
deposition method by using a thin film deposition apparatus as
illustrated in FIGS. 1 to 16.
The aperture 64 is formed in the pixel defined layer 35, and the
substrate 30 is moved within the first chamber 731 as illustrated
in FIG. 1. Next, a target organic materials are deposited by the
first to fourth thin film deposition assemblies 100 to 400.
After the organic light-emitting layer 63 is formed, the second
electrode 62 may also be formed in a similar manner to the organic
light-emitting layer 63.
The first electrode 61 may function as an anode and the second
electrode 62 may function as a cathode, or vice versa. The first
electrode 61 may be patterned to correspond to a plurality of pixel
regions and the second electrode 62 may be formed to cover all the
pixel regions.
The pixel electrode 61 may be formed as a transparent electrode or
a reflective electrode. A transparent electrode may be formed of an
indium tin oxide (ITO), an indium zinc oxide (IZO), a zinc oxide
(ZnO), or an indium oxide (In.sub.2O.sub.3). A reflective electrode
may be formed by forming a reflective layer from silver (Ag),
magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold
(Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr) or a
compound thereof and then forming a layer of ITO, IZO, ZnO, or
In.sub.2O.sub.3 on the reflective layer. The first electrode 61 is
obtained by forming a layer according to a sputtering method and by
patterning the layer according to a photolithography process.
The second electrode 62 may also be formed as a transparent
electrode or a reflective electrode. When the second electrode 62
is formed as a transparent electrode, the second electrode 62
functions as a cathode. To this end, such a transparent electrode
may be formed by depositing a metal having a low work function,
such as lithium (Li), calcium (Ca), lithium fluoride/calcium
(LiF/Ca), lithium fluoride/aluminum (LiF/AI), aluminum (Al), silver
(Ag), magnesium (Mg), or a compound thereof on a surface of the
organic light-emitting layer 63 and then forming an auxiliary
electrode layer or a bus electrode line thereon by using ITO, IZO,
ZnO, In.sub.2O.sub.3, or the like. When the second electrode 62 is
formed as a reflective electrode, the second electrode 62 may be
formed by depositing Li, Ca, LiF/Ca, LiF/AI, Al, Ag, Mg, or a
compound thereof on the entire surface of the organic
light-emitting layer 63. In this case, deposition may be performed
in a similar manner to the organic light-emitting layer 63.
In addition, embodiments of the present invention can be used not
only to form an organic or inorganic layer for an organic TFT but
also to form layers of various materials for various purposes.
Moreover, it is to be understood that the structure of an active
matrix organic light-emitting display device fabricated using a
thin film deposition apparatus according to embodiments of the
present invention may vary from what is shown in FIG. 17.
As described above, according to the above embodiments of the
present invention, a thin film deposition apparatus and a method of
easily manufacturing an organic light-emitting display device using
the same are provided. The thin film deposition apparatus may be
simply applied to manufacture large display devices on a mass
scale, and may improve manufacturing yield and deposition
efficiency. Also, an electrostatic chuck may be used to stably
support a large substrate, that is, to prevent the substrate from
sagging, and may be used to smoothly move a substrate from one
chamber to another chamber.
Although a few embodiments of the present invention have been shown
and described, it would be appreciated by those skilled in the art
that changes may be made in this embodiment without departing from
the principles and spirit of the invention, the scope of which is
defined in the claims and their equivalents.
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