U.S. patent number 8,076,685 [Application Number 12/556,946] was granted by the patent office on 2011-12-13 for nitride semiconductor device having current confining layer.
This patent grant is currently assigned to Panasonic Corporation. Invention is credited to Ryo Kajitani, Satoshi Tamura.
United States Patent |
8,076,685 |
Tamura , et al. |
December 13, 2011 |
Nitride semiconductor device having current confining layer
Abstract
A nitride semiconductor device includes an active layer formed
between an n-type cladding layer and a p-type cladding layer, and a
current confining layer having a conductive area through which a
current flows to the active layer. The current confining layer
includes a first semiconductor layer, a second semiconductor layer
and a third semiconductor layer. The second semiconductor layer is
formed on and in contact with the first semiconductor layer and has
a smaller lattice constant than that of the first semiconductor
layer. The third semiconductor layer is formed on and in contact
with the second semiconductor layer and has a lattice constant that
is smaller than that of the first semiconductor layer and larger
than that of the second semiconductor layer.
Inventors: |
Tamura; Satoshi (Osaka,
JP), Kajitani; Ryo (Osaka, JP) |
Assignee: |
Panasonic Corporation (Osaka,
JP)
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Family
ID: |
42036740 |
Appl.
No.: |
12/556,946 |
Filed: |
September 10, 2009 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20100072516 A1 |
Mar 25, 2010 |
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Foreign Application Priority Data
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Sep 25, 2008 [JP] |
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2008-246362 |
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Current U.S.
Class: |
257/97; 257/13;
257/E33.033; 257/190; 257/96; 257/E33.032; 257/183; 257/E33.034;
257/E33.023; 257/103; 257/79; 257/E33.005; 257/E33.028;
257/E33.025; 257/E33.006; 257/12; 257/E33.026; 257/E33.031;
257/E33.011; 257/94; 257/E33.003; 257/E33.027 |
Current CPC
Class: |
H01L
21/30617 (20130101); H01L 29/7787 (20130101); H01L
29/66462 (20130101); H01L 29/42316 (20130101); H01L
29/1066 (20130101); H01L 29/2003 (20130101); H01S
5/32341 (20130101) |
Current International
Class: |
H01L
33/00 (20100101) |
Field of
Search: |
;257/E33.023,E33.025,E33.026,E33.027,12,13,79,94,96,97,103,183,190,E33.003,E33.005,E33.006,E33.011,E33.028,E33.031,E33.032,E33.033,E33.034 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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08-107247 |
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Apr 1996 |
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JP |
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2000-277854 |
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Oct 2000 |
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JP |
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2001-068786 |
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Mar 2001 |
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JP |
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3439168 |
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Jun 2003 |
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JP |
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3464991 |
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Nov 2003 |
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JP |
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2008-282836 |
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Nov 2008 |
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JP |
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Primary Examiner: Kim; Jay C
Attorney, Agent or Firm: McDermott Will & Emery LLP
Claims
What is claimed is:
1. A nitride semiconductor device comprising: an n-type cladding
layer formed on a substrate; an active layer formed on the n-type
cladding layer; a current confining layer formed on the active
layer and having a recess portion; and a p-type cladding layer
formed on the current confining layer, wherein the current
confining layer includes a first semiconductor layer, a second
semiconductor layer formed on and in contact with the first
semiconductor layer, and a third semiconductor layer formed on and
in contact with the second semiconductor layer, the second
semiconductor layer has a smaller lattice constant than a lattice
constant of the first semiconductor layer, the third semiconductor
layer has a lattice constant that is smaller than the lattice
constant of the first semiconductor layer and larger than the
lattice constant of the second semiconductor layer, and the recess
portion of the current confining layer from which parts of the
third semiconductor layer and the second semiconductor layer are
removed serves as a conductive area through which a current flows
to the active layer, and is configured so that the recess portion
passes through the third semiconductor layer and a portion of the
second semiconductor layer such that the recess portion does not
extend completely through the second semiconductor layer.
2. The nitride semiconductor device of claim 1, wherein each of the
first semiconductor layer, the second semiconductor layer and the
third semiconductor layer is formed of nitride semiconductor
represented by a general formula B.sub.wAl.sub.xIn.sub.yGa.sub.zN
(where 0.ltoreq.w, x, y, z.ltoreq.1, w+x+y+z=1).
3. The nitride semiconductor device of claim 2, wherein the first
semiconductor layer contains indium.
4. The nitride semiconductor device of claim 2, wherein each of the
second semiconductor layer and the third semiconductor layer
contains boron, and the second semiconductor layer has a larger
boron composition than a boron composition of the third
semiconductor layer.
5. The nitride semiconductor device of claim 2, wherein the third
semiconductor layer has a larger aluminum composition than an
aluminum composition of the first semiconductor layer, and the
second semiconductor layer has a larger aluminum composition than
the aluminum composition of the third semiconductor layer.
6. The nitride semiconductor device of claim 5, wherein the first
semiconductor layer is formed of GaN, and the second semiconductor
layer is formed of AlGaN having an aluminum composition of
approximately 0.15 or more.
7. The nitride semiconductor device of claim 1, wherein the second
semiconductor layer has a thickness of approximately 10 nm or
less.
8. The nitride semiconductor device of claim 1, further comprising:
an intermediate layer formed between the current confining layer
and the active layer and having a larger lattice constant than the
lattice constant of the first semiconductor layer.
Description
CROSS-REFERENCE TO RELATED APPLICATION
The disclosure of each of Japanese Patent Application No.
2008-246362 filed on Sep. 25, 2008, and Japanese Patent Application
No. 2009-163649 filed on Jul. 10, 2009, including specification,
drawings and claims is incorporated herein by reference in its
entirety.
BACKGROUND OF THE INVENTION
The present disclosure relates to nitride semiconductor devices,
and more particularly, relates to a nitride semiconductor device
including a buried current confining layer.
Currently, much attention has been given to group III-V nitride
compound semiconductor, i.e., so-called nitride semiconductor,
typified by gallium nitride (GaN), having a chemical formula
B.sub.wAl.sub.xIn.sub.yGa.sub.zN (where 0.ltoreq.w, x, y,
z.ltoreq.1 and w+x+y+z=1). Specifically, nitride semiconductor is
formed of boron (B), aluminum (Al), gallium (Ga) and indium (In)
which are group III elements, and nitride (N) which is a group V
element.
For example, light emitting diodes (LED) employing nitride
semiconductor have been used for large display devices, traffic
lights, and the like. Also, white LEDs which use a combination of
an LED employing nitride semiconductor and a phosphor have been
already commercialized, and are expected to be used to replace
currently used illumination devices in future, if the luminous
efficiency of white LEDs is improved.
With the increasing development of blue-violet semiconductor laser
diodes employing nitride semiconductor, the market size thereof
grows each year. In a blue-violet semiconductor laser diode, the
diameter of a beam spot on an optical disc can be reduced, compared
to semiconductor laser diodes emitting light in the red range and
the infrared range, used for optical discs such as known CDs, DVDs
and the like. Thus, the memory density of optical discs can be
increased.
Gallium nitride materials have excellent physical properties, i.e.,
a high dielectric breakdown electric field, a high saturated drift
velocity for electrons in a high electric field, and a high density
of two-dimensional electron gas at a heterojunction. Thus, gallium
nitride materials are regarded as one of promising materials for
electronic devices.
To fabricate a semiconductor device such as an optical device, an
electric device or the like, employing nitride semiconductor, a
technique for forming nitride semiconductor into a desired shape is
required. To form a current confining structure of a laser diode, a
gate recess of a FET and the like, a nitride semiconductor layer
has to be selectively etched. In general, dry etching is used for
etching nitride semiconductor (see, for example, the specification
of Japanese Patent No. 3464991).
SUMMARY OF THE INVENTION
However, when a nitride semiconductor layer is etched using dry
etching, the following problems arise.
A first problem is as follows. In dry etching, ions are accelerated
toward a semiconductor layer to collide with it, thereby etching
the semiconductor layer. Thus, great damage on the semiconductor
layer is caused. Therefore, when a recess is formed by dry etching,
device properties are degraded due to damage caused during
etching.
Dry etching is a technique which is highly controllable. However,
during dry etching, variations of a few percent occur. Thus, for
example, when an AlGaN layer formed on a GaN layer is removed,
overetching and underetching are unavoidable, thus resulting in
variations in device properties.
Therefore, in an etching method used in fabrication of a
semiconductor device, it is ideal that damage caused by etching is
small and etching is automatically stopped at an interface between
two semiconductor layers.
The present inventors discovered conditions for wet etching where
damage caused by etching can be reduced and also etching can be
stopped automatically at or near an interface between two
semiconductor layers.
An object of this disclosure is to solve the above-described
problems, based on the findings of the present inventors, and
achieve a nitride semiconductor device in which degradation of
device properties due to etching damage and variations in device
properties due to variations in etching are small.
To achieve the above-described object, according to the present
disclosure, a nitride semiconductor device includes a stacked layer
body in which, between a layer having a larger lattice constant and
a layer having a smaller lattice constant, a layer having a smaller
lattice constant than the smaller lattice constant is provided.
Specifically, a first example nitride semiconductor device includes
an n-type cladding layer formed on a substrate; an active layer
formed on the n-type cladding layer; a current confining layer
formed on the active layer and having a recess portion; and a
p-type cladding layer formed on the current confining layer. The
current confining layer includes a first semiconductor layer, a
second semiconductor layer formed on and in contact with the first
semiconductor layer, and a third semiconductor layer formed on and
in contact with the second semiconductor layer, the second
semiconductor layer has a smaller lattice constant than that of the
first semiconductor layer, the third semiconductor layer has a
lattice constant that is smaller than that of the first
semiconductor layer and larger than that of the second
semiconductor layer, and the recess portion of the current
confining layer from which parts of the third semiconductor layer
and the second semiconductor layer are removed serves as a
conductive area through which a current flows to the active
layer.
The above-described structure of the first example nitride
semiconductor device allows etching stop to automatically occur
with a remaining portion of the second semiconductor layer having a
very small thickness around an interface of the first semiconductor
layer and the second semiconductor layer with high reproducibility
when a recess portion to serve as the conductive area is formed by
performing wet etching to the current confining layer. Accordingly,
variations in semiconductor device properties due to variations in
etching can be suppressed.
A second example nitride semiconductor device includes: an n-type
cladding layer formed on a substrate; an active layer formed on the
n-type cladding layer; a current confining layer formed on the
active layer and having a recess portion; and a p-type cladding
layer formed on the current confining layer. The current confining
layer includes a first semiconductor layer and a second
semiconductor layer formed on and in contact with the first
semiconductor layer, the first semiconductor layer has a
superlattice structure in which two or more stacking cycles of a
first layer and a second layer having a larger lattice constant
than that of the first layer are repeated, and the recess portion
of the current confining layer from which parts of the second
semiconductor layer and the first semiconductor layer are removed
serves as a conductive area through which a current flows to the
active layer.
In the second example nitride semiconductor device, multiple ones
of the interface of the first layer and the second layer in which
the etching stop function occurs exist. Thus, etching for forming
the conductive area can be automatically stopped with high
reproducibility. Accordingly, variations in semiconductor device
properties due to variations in etching can be suppressed.
A third example nitride semiconductor device includes: a first
nitride semiconductor layer formed on a substrate; a second nitride
semiconductor layer formed on and in contact with the first nitride
semiconductor layer and having a smaller lattice constant than that
of the first nitride semiconductor layer; and a third nitride
semiconductor layer formed on and in contact with the second
nitride semiconductor layer and having a lattice constant that is
smaller than that of the first nitride semiconductor layer and
larger than that of the second nitride semiconductor layer. The
third nitride semiconductor layer and the second nitride
semiconductor layer have a recess portion formed so that the recess
portion passes through the third nitride semiconductor layer and
part of the second semiconductor layer remains under the recess
portion.
The above-described structure of the third example nitride
semiconductor device allows etching stop to occur with a remaining
portion of the second nitride semiconductor layer having a very
small thickness around an interface of the first nitride
semiconductor layer and the second nitride semiconductor. Thus, the
recess portion can be formed in the second nitride semiconductor
layer so as not to pass through the first nitride semiconductor
layer with high reproducibility. For example, by using the recess
portion as a gate recess, a heterojunction transistor can be formed
with high reproducibility.
An example method for fabricating a nitride semiconductor device
includes the steps of: a) forming a first nitride semiconductor
layer, a second nitride semiconductor layer and a third nitride
semiconductor layer in this order on a substrate; and b) forming a
recess portion by selectively removing parts of the third nitride
semiconductor layer and the second nitride semiconductor layer. The
second nitride semiconductor layer is formed on and in contact with
the first nitride semiconductor layer and has a smaller lattice
constant than that of the first nitride semiconductor layer, the
third nitride semiconductor layer is formed on and in contact with
the second nitride semiconductor layer and has a lattice constant
that is smaller than that of the first nitride semiconductor layer
and larger than that of the second nitride semiconductor layer, and
in the step b), photoelectrochemical etching is performed.
In the example method, etching can be stopped with a remaining
portion of the second nitride semiconductor layer having a small
thickness around an interface of the first nitride semiconductor
layer and the second nitride semiconductor and with high
reproducibility. Thus, the recess portion can be formed in a simple
manner so as not to pass through the first nitride semiconductor
layer. Therefore, a nitride semiconductor device including a
current confining layer, a gate recess or the like can be formed
with high yield.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a cross-sectional view illustrating a method for etching
a nitride semiconductor layer according to a first embodiment of
the present invention.
FIG. 2 is a graph showing the relationship between etching time and
etching amount for etching of the nitride semiconductor layer of
the first embodiment.
FIGS. 3A and 3B are energy band diagrams for describing an etching
mechanism of etching of the nitride semiconductor layer of the
first embodiment.
FIGS. 4A and 4B are views of a nitride semiconductor device
according to the first embodiment. FIG. 4A is a cross-sectional
view of the nitride semiconductor device. FIG. 4B is an enlarged
cross-sectional view of a conductive area.
FIGS. 5A through 5C are cross-sectional views illustrating
respective steps in sequence for fabricating the nitride
semiconductor device of the first embodiment.
FIGS. 6A and 6B are cross-sectional views illustrating respective
steps in sequence for fabricating the nitride semiconductor device
of the first embodiment.
FIGS. 7A and 7B are views of a nitride semiconductor device
according to a second embodiment of the present invention. FIG. 7A
is a cross-sectional view of the nitride semiconductor device. FIG.
7B is an enlarged cross-sectional view of a conductive area.
FIGS. 8A through 8C are cross-sectional views illustrating
respective steps in sequence for fabricating the nitride
semiconductor device of the second embodiment.
FIGS. 9A and 9B are cross-sectional views illustrating respective
steps in sequence for fabricating the nitride semiconductor device
of the second embodiment.
FIG. 10 is a cross-sectional view of a nitride semiconductor device
according to a third embodiment of the present invention.
FIGS. 11A through 11C are cross-sectional views illustrating
respective steps in sequence for fabricating the nitride
semiconductor device of the third embodiment.
FIG. 12 is a cross-sectional view of a nitride semiconductor device
according to a fourth embodiment of the present invention.
FIGS. 13A through 13E are cross-sectional views illustrating
respective steps in sequence for fabricating the nitride
semiconductor device of the fourth embodiment.
FIG. 14 is a cross-sectional view of a variation of the nitride
semiconductor device according to the first embodiment.
DETAILED DESCRIPTION OF THE INVENTION
First Embodiment
First, a basis for wet etching used in a first embodiment of the
present invention will be described with reference to the
accompanying drawings. In this embodiment, as wet etching,
photoelectrochemical (PEC) etching in which a nitride semiconductor
layer being irradiated with light is reacted with an alkaline
solution is used.
FIG. 1 schematically illustrates PEC etching. As shown in FIG. 1,
etching is performed by immersing a nitride semiconductor layer 51
coupled to a cathode 52 made of platinum (Pt) or the like in an
alkaline etching solution 53 such as potassium hydrate (KOH) and
then irradiating it with light. In PEC etching, n-type nitride
semiconductor is selectively etched, and p-type nitride
semiconductor is not etched.
Various publications (see, for example, Appl. Phys. Lett., vol. 72,
No. 5, 1998, pp. 560-562) have described PEC etching of n-type
nitride semiconductor. Therefore, when an n-type nitride
semiconductor layer is stacked on a p-type nitride semiconductor
layer, it is expected that only the n-type nitride semiconductor
layer is etched without etching the p-type nitride semiconductor
layer. However, it has not yet been reported that, by performing
PEC etching after an n-type nitride semiconductor layer was formed
on a p-type nitride semiconductor layer, only the n-type nitride
semiconductor layer could been selectively removed.
As a result of examinations by the present inventors, it has been
found that when a first nitride semiconductor layer 51A is p-type
and then PEC etching is performed to an n-type second nitride
semiconductor layer 51B, etching does not extend to an interface
between the n-type second nitride semiconductor layer 51B and the
p-type first nitride semiconductor layer 51A, but is stopped with a
remaining portion of the n-type second nitride semiconductor layer
51B having a thickness of several nm to several tens nm.
It has been also found that in the case where the first nitride
semiconductor layer 51A has a narrower energy band gap than that of
the second nitride semiconductor layer 51B, not only when the first
nitride semiconductor layer 51A is doped to be p-type but also when
the first nitride semiconductor layer 51A is doped to be n-type,
etching can be stopped with a very small remaining portion of the
second nitride semiconductor layer 51B.
The present inventors further examined etching behavior when each
of the first nitride semiconductor layer 51A and the second nitride
semiconductor layer 51B was n-type. FIG. 2 shows the relationship
between etching time and etching amount when the first nitride
semiconductor layer was n-GaN and the second nitride semiconductor
layer was n-AlGaN. As shown in FIG. 2, with the second nitride
semiconductor layer having an Al composition of 0.12, etching stop
occurred with a remaining portion of the second nitride
semiconductor layer 51B having a thickness of about 5 to 10 nm
after a lapse of about 20 minutes since a start of etching.
However, when still more time elapsed, then, etching was resumed to
extend to the first nitride semiconductor layer 51A. In contrast to
this, with the second nitride semiconductor layer 51B having an Al
composition of 0.15, once etching stop occurred after a lapse of
about 20 minutes, etching was not resumed even after a lapse of
another about 60 minutes.
In a general semiconductor fabrication process, it is preferable
that, even if etching time largely varies, variations in etching
are not caused. With a nitride semiconductor layer having an Al
composition of 0.12, etching time has to be strictly controlled in
order to improve reproducibility. However, with a nitride
semiconductor layer having an Al composition of 0.15,
reproducibility can be easily improved.
Although the reason why a nitride semiconductor layer having a
large Al composition has a higher etching stop function is as yet
incompletely understood, the present inventors presume that the
reason is as follows. FIG. 3A is an energy band diagram showing a
state where the second nitride semiconductor layer has a large
thickness at an initial stage of etching. FIG. 3B is an energy band
diagram showing a state where the second nitride semiconductor
layer has been etched to a thickness of several nm. The second
nitride semiconductor layer 51B formed of n-AlGaN and the first
nitride semiconductor layer 51A formed of n-GaN have different
lattice constants. Thus, when the second nitride semiconductor
layer 51B and the first nitride semiconductor layer 51A are in
contact with each other, piezoelectric polarization occurs, so that
a band structure shown in FIG. 3A is formed. The band structure is
characterized in that two-dimensional electron gas tends to gather
at an interface area of the first nitride semiconductor layer 51A
formed of n-GaN and the second nitride semiconductor layer 51B
formed of n-AlGaN.
In the state of FIG. 3A, holes generated due to irradiation of
light contribute to etching of the second nitride semiconductor
layer 51B, thus causing further etching. However, as shown in FIG.
3B, as a result of the further etching, when the thickness of the
second nitride semiconductor layer 51B becomes about 5 nm or less,
electron tunneling occurs in the second nitride semiconductor layer
51B, and electrons flow to a surface of the second nitride
semiconductor layer 51B. Consequently, electrons and holes tunneled
recombine at a surface level. As a result, the concentration of
holes contributing to etching is reduced to a very low level, so
that etching is almost stopped.
Presumably, the reason why the etching stop function is increased
when the Al composition in the second nitride semiconductor layer
is increased is because a difference between the lattice constant
of the second nitride semiconductor layer 51B and the lattice
constant of the first nitride semiconductor layer 51A formed of
n-GaN is increased as the Al composition in the second nitride
semiconductor layer is increased. Accordingly, a density of
two-dimensional electron gas to be induced at the interface area is
increased. Thus, the amount of holes to disappear due to
recombination is increased, so that the concentration of holes
contributing to etching is further reduced.
As described above, when wet etching is performed to a stacked
layer structure in which a layer having a larger lattice constant
and a layer having a smaller lattice constant are formed in contact
with each other in this order from a substrate, etching stop occurs
with a very small remaining portion of the layer having a small
lattice constant. This etching stop tends to occur when a
difference between respective lattice constants of the layers is
large. The ratio between the lattice constant of AlGaN having an Al
composition of 0.15 in an a-axis direction and the lattice constant
of GaN in the a-axis direction is 0.972. Therefore, the second
nitride semiconductor layer and the first nitride semiconductor
layer are preferably formed so that the ratio between the
respective lattice constants in the a-axis is 0.972 or less. Note
that the a-axis is substantially parallel to a principal surface of
an epitaxial layer.
Next, a nitride semiconductor device which is fabricated, based on
the results of the above-described experiments, such that etching
stop reliably occurs and variations due to etching are reduced will
be described. FIG. 4A is a cross-sectional view of the nitride
semiconductor device of the first embodiment. FIG. 4B is an
enlarged cross-sectional view of a conductive area through which a
current flows to an active layer. As shown in FIGS. 4A and 4B, the
nitride semiconductor device of the first embodiment is a
semiconductor laser device including a buried current confining
layer.
A buffer layer 12, an n-type cladding layer 13, an n-type guide
layer 14, an active layer 15, an electron barrier layer 16, a first
p-type guide layer 17, a current confining layer 18, a second
p-type guide layer 21, a p-type cladding layer 22, and a p-type
contact layer 23 are formed in this order on a substrate 11. On the
p-type contact layer 23, a p-type electrode 31 is formed. On a back
surface of the substrate 11, an n-type electrode 32 is formed. When
a voltage is applied between the p-type electrode 31 and the n-type
electrode 32, a current flows to the active layer 15 through a
conductive area 20 formed in the current confining layer 18, thus
generating laser oscillation.
The substrate 11 is formed of GaN. The buffer layer 12 is formed of
n-GaN. The n-type cladding layer 13 is formed of n-AlGaN. The
n-type guide layer 14 is formed of n-GaN. The active layer 15 is a
multiple quantum well (MQW) active layer formed of InGaN. The
electron barrier layer 16 is formed of p-AlGaN. The first p-type
guide layer 17 is formed of p-GaN. The second p-type guide layer 21
is formed of p-GaN. The p-type cladding layer 22 is formed of
p-AlGaN. The p-type contact layer 23 is formed of p-GaN.
The current confining layer 18 has a stacked layer structure
including a first semiconductor layer 18A formed of n-GaN having a
thickness of 20 nm, a second semiconductor layer 18B formed of
n-Al.sub.0.15Ga.sub.0.85N having a thickness of 10 nm, and a third
semiconductor layer 18C formed of n-Al.sub.0.12Ga.sub.0.88N having
a thickness of 130 nm stacked in this order. In the current
confining layer 18, parts of third semiconductor layer 18C and the
second semiconductor layer 18B are removed, and a recess portion is
formed therein. The second p-type guide layer 21 is formed so as to
fill the recess portion. Parts of the second semiconductor layer
18B and the first semiconductor layer 18A located under the recess
portion are inverted to be p-type since a p-type impurity is
diffused therein when the second p-type guide layer 21, the p-type
cladding layer 22 and the p-type contact layer 23 are regrown.
Thus, part of the current confining layer 18 in which the recess
portion is formed serves as the conductive area 20 when a voltage
is applied between the p-type electrode 31 and the n-type electrode
32.
Next, a method for fabrication a nitride semiconductor device
according to this embodiment will be described. FIGS. 5A through 5C
are cross-sectional views illustrating respective steps in sequence
for fabricating the nitride semiconductor device of the first
embodiment.
First, as shown in FIG. 5A, a buffer layer 12 of GaN, an n-type
cladding layer 13, an n-type guide layer 14, an active layer 15, an
electron barrier layer 16, a first p-type guide layer 17, and a
current confining layer 18 are formed in this order on a substrate
11 formed of GaN by metal organic chemical vapor deposition
(MOCVD). For n-type layers, for example, silicon can be introduced
as an n-type impurity. For p-type layers, for example, magnesium
can be introduced as a p-type impurity.
The current confining layer 18 has a three-layer structure
including a first semiconductor layer 18A formed of n-GaN, a second
semiconductor layer 18B formed of n-Al.sub.0.15Ga.sub.0.85N, and a
third semiconductor layer 18C formed of n-Al.sub.0.12Ga.sub.0.88N.
Compositions of the first semiconductor layer 18A, the second
semiconductor layer 18B and the third semiconductor layer 18C will
be described in detail later.
Next, as shown in FIG. 5B, after a metal mask 55 is formed on the
third semiconductor layer 18C, the metal mask 55 is electrically
coupled to a platinum (Pt) cathode 52 and is immersed in an etching
solution 53 of KOH or the like. The metal mask 55 is preferably
formed of a material such as titanium (Ti) or the like, which can
provide a good ohmic contact with the third semiconductor layer
18C. In this state, the current confining layer 18 is irradiated
with UV light, so that part of the current confining layer 18 is
etched. Note that a surface (group V surface) of the substrate 11
on which an epitaxial layer formed by MOCVD does not exist has to
be coated by, for example, a dielectric film or the like, so that
the grope V surface is not brought in contact with a chemical
solution.
As described above, etching is automatically stopped in a state
where exposed part of the third semiconductor layer 18C formed of
n-Al.sub.0.12Ga.sub.0.88N is removed and part of the second
semiconductor layer 18B formed of n-Al.sub.0.15Ga.sub.0.85N
remains. Thereafter, the metal mask 55 and the Pt cathode 52 are
decoupled, and then, the metal mask 55 is removed using a chemical
solution, thereby forming, as shown in FIG. 5C, a current confining
layer 18 having a recess portion 18a.
Next, as shown in FIG. 6A, a second p-type guide layer 21, a p-type
cladding layer 22, and a p-type contact layer 23 are regrown on the
current confining layer 18 so as to fill the recess portion 18a
using MOCVD. In this process step, a p-type impurity is diffused in
respective remaining portions of the second semiconductor layer 18B
and the first semiconductor layer 18A under a bottom surface of the
recess portion 18a. Thus, parts of the first semiconductor layer
18A and the second semiconductor layer 18B which remain under the
bottom surface of the recess portion 18a are converted to
p-type.
Next, annealing is performed at 800.degree. C. in a nitrogen
atmosphere to activate the p-type impurity. Thereafter, a p-type
electrode 31 is formed on the p-type contact layer 23. The p-type
electrode 31 is obtained by forming a multilayer film including
nickel (Ni) or palladium (Pd) using electron beam (EB) deposition
and then sintering the multilayer film.
Subsequently, a thickness of a surface of the substrate 11 on which
an epitaxial layer formed by MOCVD does not exist is reduced by
polishing, and then, an n-type electrode 32 is formed on the
polished surface. The n-type electrode 32 is formed of a multilayer
film including Ti, vanadium (V) or the like. Thereafter, cleaving
is preformed to divide a wafer into chips, thereby forming a
semiconductor laser device of FIG. 6B including a buried current
confining layer.
Hereinafter, the current confining layer 18 will be described in
detail. In this embodiment, the current confining layer 18 has a
three-layer structure including the first semiconductor layer 18A
formed of n-GaN, the second semiconductor layer 18B formed of
n-Al.sub.0.15Ga.sub.0.85N and the third semiconductor layer 18C
formed of n-Al.sub.0.12Ga.sub.0.88N. Each of the second
semiconductor layer 18B and the third semiconductor layer 18C has a
smaller lattice constant than that of the first semiconductor layer
18A located closest to the substrate 11. The lattice constant of
the second semiconductor layer 18B is smaller than that of the
third semiconductor layer 18C.
As described above, to cause etching stop to occur, a lattice
constant of a semiconductor layer located closer to a substrate has
to be larger than that of a semiconductor located closer to a
chemical solution. Furthermore, to reliably cause etching stop to
occur, a difference between the lattice constants has to be large.
In this embodiment, a difference between the lattice constants of
the first semiconductor layer 18A and the second semiconductor
layer 18B is sufficiently large, so that etching can be stopped
with a remaining portion of the second semiconductor layer 18B
having a very small thickness on the first semiconductor layer 18A.
Therefore, the current confining layer 18 can be also formed so as
to include only the first semiconductor layer 18A and the second
semiconductor layer 18B.
To ensure the current confining function, the current confining
layer 18 has to be formed to have a relatively large thickness at
other part than the conductive area. Therefore, when the current
confining layer 18 having a two-layer structure including the first
semiconductor layer 18A and the second semiconductor layer 18B is
formed, the second semiconductor layer 18B has to have a large
thickness. When the second semiconductor layer 18B having a high Al
composition is grown on the first semiconductor layer 18A formed of
n-GaN to a large thickness, cracks tend to be generated. This might
cause reduction in yield. Therefore, in this disclosure, the second
semiconductor layer 18B is formed to have a relatively small
thickness, and then, the third semiconductor layer 18C having a low
Al composition is formed thereon to have a relatively large
thickness. Thus, the etching stop function during wet etching is
improved, and also, the generation of cracks is suppressed.
As long as the second semiconductor layer 18B has a thickness of
5-10 nm, etching stop is reliably caused to occur, so that a
remaining portion of the second semiconductor layer 18B is left
after wet etching. The Al composition of the second semiconductor
layer 18B is at least 0.15 or more when the first semiconductor
layer 18A is formed of GaN. When the second semiconductor layer 18B
is formed of AlGaN having an Al composition of 0.15 and the first
semiconductor layer 18A is formed of GaN, the ratio between the
respective lattice constants of the second semiconductor layer 18B
and the first semiconductor layer 18A in the a-axis direction is
0.972. In contrast, the Al composition of the third semiconductor
layer 18C is preferably 0.12 or less so that the generation of
cracks can be suppressed.
In this embodiment, the example where the lattice constant of each
layer is changed by changing the Al composition thereof has been
described. However, as long as the lattice constant of each layer
can be changed, any structure can be used. In general, there is a
tendency that as an In composition is increased, a lattice constant
is increased, and as an Al composition or a B composition is
increased, a lattice constant is reduced. Thus, as a layer whose
lattice constant is desired to be small, a layer containing Al or B
is used. Then, if the lattice constant is desired to be even
smaller, the Al composition or the B composition of the layer is
increased. As a layer whose lattice constant is desired to be
large, a layer which does not contain Al and B is used, or a layer
containing In is used. For example, by using a nitride
semiconductor containing In as the first semiconductor layer 18A
and nitrite semiconductor containing Al as the second semiconductor
layer 18B, the difference between the lattice constants of the
first semiconductor layer 18A and the second semiconductor layer
18B can be increased. Nitride semiconductors each being represented
by a general formula B.sub.wAl.sub.xGa.sub.yIn.sub.zN (where
0.ltoreq.w, x, y, z.ltoreq.1, w+x+y+z=1) and containing at least
one of boron, aluminum, gallium, and indium which are group III
elements, and nitrogen which is a group V element can be used in a
proper combination. In this case, the second semiconductor layer
18B and the first semiconductor layer 18A are preferably formed so
that the ratio between their lattice constants in the a-axis
direction is 0.972 or less.
Moreover, the current confining layer 18 may be formed to have a
four or more layer structure. For example, when a fourth
semiconductor layer having a larger lattice constant than that of
the first semiconductor layer 18A is formed so as to be located
closer to the substrate 11 than the first semiconductor layer 18A,
a larger distortion can be generated at an interface between the
first semiconductor layer 18A and the second semiconductor layer
18B. Thus, the etching stop function can be further improved. Also,
the same effect can be achieved by forming a separate layer from
the current confining layer 18, as an intennediate layer 72 having
a larger lattice constant than that of the first semiconductor
layer 18A, between the current confining layer 18 and the active
layer 15, as is shown in FIG. 14.
Second Embodiment
Hereinafter, a second embodiment of the present invention will be
described with reference to the accompanying drawings. FIG. 7A is a
cross-sectional view of a nitride semiconductor device according to
the second embodiment. FIG. 7B is an enlarged cross-sectional view
of a conductive area through which a current flows to an active
layer. In FIGS. 7A and 7B, each member also shown in FIGS. 4A and
4B is identified by the same reference numeral.
As shown in FIGS. 7A and 7B, in the nitride semiconductor device of
the second embodiment, a current confining layer 28 includes a
first semiconductor layer 28A and a second semiconductor layer 28B
formed on the first semiconductor layer 28A. The first
semiconductor layer 28A is a superlattice layer in which five
stacking cycles of a first layer 34 formed of n-GaN having a
thickness of 2 nm and a second layer 35 formed of
n-Al.sub.0.12Ga.sub.0.88N having a thickness of 2 nm are repeated.
The second semiconductor layer 28B is formed of
n-Al.sub.0.12Ga.sub.0.88N having a thickness of 130 nm.
Hereinafter, a method for fabricating the nitride semiconductor
device according to the second embodiment will be described with
reference to the accompanying drawings. FIGS. 8A through 8C are
cross-sectional views illustrating respective steps in sequence for
fabricating the nitride semiconductor device of the second
embodiment.
First, as shown in FIG. 8A, a buffer layer 12 of GaN, an n-type
cladding layer 13, an n-type guide layer 14, an active layer 15, an
electron barrier layer 16, a first p-type guide layer 17, and a
current confining layer 28 are formed in this order on a substrate
11 formed of GaN by metal organic chemical vapor deposition
(MOCVD). To form the current confining layer 28, a superlattice
layer is formed by repeating five stacking cycles of a first layer
34 of n-GaN and a second layer 35 of n-Al.sub.0.12Ga.sub.0.88N, and
then a second semiconductor layer 28B of n-Al.sub.0.12Ga.sub.0.88N
is formed. Respective compositions of the first semiconductor layer
28A and the second semiconductor layer 28B will be described in
detail later.
Next, as shown in FIG. 8B, after a metal mask 55 is formed on the
second semiconductor layer 28B, the metal mask 55 is electrically
coupled to a Pt cathode 52 and is immersed in an etching solution
53 of KOH or the like. The metal mask 55 is preferably formed of a
material such as titanium (Ti) or the like, which provide a good
ohmic contact with the second semiconductor layer 28B. In this
state, the substrate 11 is irradiated with UV light, so that part
of the current confining layer 28 is etched. Note that a surface
(group V surface) of the substrate 11 on which an epitaxial layer
formed by MOCVD does not exist has to be coated by, for example, a
dielectric film or the like, so that the grope V surface is not
brought in contact with the chemical solution.
Etching is automatically stopped, so that exposed part of the
second semiconductor layer 28B formed of n-Al.sub.0.12Ga.sub.0.88N
is removed and part of the first semiconductor layer 28A which is a
superlattice layer remains. Thereafter, the metal mask 55 and the
Pt cathode 52 are decoupled, and then, the metal mask 55 is removed
using a chemical solution, thereby forming, as shown in FIG. 8C, a
current confining layer 28 having a recess portion 28a.
Next, as shown in FIG. 9A, a second p-type guide layer 21, a p-type
cladding layer 22, and a p-type contact layer 23 are regrown on the
current confining layer 28 so as to fill the recess portion 28a by
MOCVD. In this process step, a p-type impurity is diffused in a
remaining portion of the first semiconductor layer 28A under a
bottom surface of the recess portion 28a. Thus, the remaining
portion of the first semiconductor layer 28A under a bottom surface
of the recess portion 28a is converted to p-type.
Next, annealing is performed at 800.degree. C. in a nitrogen
atmosphere to activate the p-type impurity. Thereafter, a p-type
electrode 31 is formed on the p-type contact layer 23. The p-type
electrode 31 is formed by forming a multilayer film containing
nickel (Ni), palladium (Pd) using electron beam (EB) deposition and
then sintering the multilayer film.
Subsequently, a thickness of a surface of the substrate 11 on which
an epitaxial layer formed by MOCVD does not exist is reduced by
polishing, and then, an n-type electrode 32 is formed on the
polished surface. The n-type electrode 32 is formed of a multilayer
film containing Ti, vanadium (V) or the like. Thereafter, cleaving
is preformed to divide a wafer into chips, thereby forming a
semiconductor laser device of FIG. 9B including a buried current
confining layer.
Hereinafter, the current confining layer 28 will be described in
detail. In this embodiment, the first semiconductor layer 28A of
the current confining layer 28 is a superlattice layer in which
five stacking cycles of a first layer 34 of n-GaN and a second
layer 35 of n-Al.sub.0.12Ga.sub.0.88N are repeated. The first layer
34 has a larger lattice constant than that of the second layer 35.
Thus, five interfaces at which a layer having a smaller lattice
constant is formed on a layer having a larger lattice constant are
provided. As described above, etching stop occurs at an interface
at which a layer having a smaller lattice constant is formed on a
layer having a larger lattice constant. In this embodiment, the
first layer 34 is n-GaN and the second layer 35 is
n-Al.sub.0.12Ga.sub.0.88N. Thus, when an etching time is increased,
etching extends through the interface. However, due to the
existence of the five interfaces, the overall etching stop function
can be improved. Moreover, since a layer with a high Al composition
does not have to be formed, the generation of cracks is not an
issue in this embodiment.
In this embodiment, the example where the lattice constant of each
layer is changed by changing the Al composition thereof has been
described. However, as long as the lattice constant of each layer
can be changed, any structure can be used. In general, there is a
tendency that as an In composition is increased, a lattice constant
is increased, and as an Al composition or a B composition is
increased, a lattice constant is reduced. For example, by using a
nitride semiconductor containing In as the first layer 34 and
nitrite semiconductor containing Al or B as the second layer 35,
the difference between the lattice constants at each interface in
the superlattice layer can be increased. That is, nitride
semiconductors each being represented by a general formula
B.sub.wAl.sub.xGa.sub.yIn.sub.zN (where 0.ltoreq.w, x, y,
z.ltoreq.1, w+x+y+z=1) and containing at least one of boron,
aluminum, gallium, and indium which are group III elements, and
nitrogen which is a group V element can be used in a proper
combination. Also, in this case, the second layer 35 and the first
layer 34 are preferably formed so that the ratio between their
lattice constants in the a-axis direction is 0.972 or less.
When the second semiconductor layer 28B has the same composition as
that of the second layer 35 of the superlattice layer, the second
semiconductor layer 28B can be formed in a simple manner. However,
the second semiconductor layer 28B may have a different composition
from that of the second layer 35. The number of stacking cycles may
be any number as long as it is two or more. However, when five
stacking cycles are repeated, the etching stop function can be
sufficiently ensured. Each of the layers 34 and 35 constituting the
superlattice layer is formed to have a thickness of about 2-3 nm.
Furthermore, the layers 34 and 35 are preferably formed so that the
first layer 34 having a larger lattice constant is located closest
to the substrate. When the second layer 35 having a smaller lattice
constant is located lowest, an interface which does not contribute
to etching stop is provided.
The current confining layer 28 may be formed to have a three-layer
structure. For example, a layer having a larger lattice constant
than that of the first layer 34 can be formed at a lower level than
the first semiconductor layer 28A, or a layer having a larger
lattice constant than that of the second semiconductor layer 28B
can be formed at a higher level than the second semiconductor layer
28B.
In each of the first and second embodiments, the case where the
nitride semiconductor device is a semiconductor laser device
including a buried current confining layer has been described.
However, the first and second embodiments are applicable to to
nitride semiconductor devices in which an opening portion has to be
selectively formed in an n-type semiconductor layer.
In each of the first and second embodiments, the substrate is
formed of GaN. However, as long as a nitride semiconductor layer
can be grown on the substrate, the substrate may be formed of,
instead of GaN, sapphire, silicon, silicon carbide or the like.
Third Embodiment
Hereinafter, a third embodiment of the present invention will be
described with reference to the accompanying drawings. FIG. 10 is a
cross-sectional view of a nitride semiconductor device according to
the third embodiment. As shown in FIG. 10, the nitride
semiconductor device of this embodiment is a heterojunction field
effect transistor (hereinafter referred to as an "HFET") having a
recess structure.
A buffer layer 42, a first nitride semiconductor layer 43 of i-GaN
or the like, a second nitride semiconductor layer 44 of
n-Al.sub.0.25Ga.sub.0.75N, and a third nitride semiconductor layer
45 of n-Al.sub.0.12Ga.sub.0.88N are formed on a substrate 41 such
as a sapphire substrate or the like. Parts of the third nitride
semiconductor layer 45 and the second nitride semiconductor layer
44 are removed by etching, thereby forming a recess portion 60
which is a gate recess. Specifically, in the recess portion 60, the
second nitride semiconductor layer 44 is not completely removed,
but a remaining portion of the second nitride semiconductor layer
44 having a small thickness is left on the first nitride
semiconductor layer 43. In the recess portion 60, a gate electrode
48 is formed. An ohmic electrode 46 and an ohmic electrode 47 are
formed, respectively, on parts of the third nitride semiconductor
layer 45 located at both sides of the recess portion 60. One of the
ohmic electrode 46 and the ohmic electrode 47 serves as a source
electrode and the other of the electrodes serves as a drain
electrode.
Hereinafter, a method for fabricating the HFET according to this
embodiment will be described. First, as shown in FIG. 11A, a buffer
layer 42, a first nitride semiconductor layer 43, a second nitride
semiconductor layer 44 and a third nitride semiconductor layer 45
are formed in this order on a substrate 41 using MOCVD or the
like.
Next, as shown in FIG. 11B, parts of the third nitride
semiconductor layer 45 and the second nitride semiconductor layer
44 are removed by PEC etching, thereby forming a recess portion 60.
When PEC etching is performed to a stacked body of an
n-Al.sub.0.12Ga.sub.0.88N layer and an n-Al.sub.0.25Ga.sub.0.75N
layer, as described in the first embodiment, etching stop occurs
with a remaining portion of the n-Al.sub.0.25Ga.sub.0.75N layer
having a very small thickness. The thickness of the remaining
portion of the n-Al.sub.0.25Ga.sub.0.75N layer is about 5 nm or
more. However, the n-Al.sub.0.25Ga.sub.0.75N layer can be left
remaining with a constant thickness and high reproducibility.
Next, an ohmic electrode 46 and an ohmic electrode 47 are formed,
respectively, on parts of the third nitride semiconductor layer 45
located at both sides of the recess portion 60. In the recess
portion 60, a gate electrode 48 is formed. Each of the ohmic
electrode 46, the ohmic electrode 47 and the gate electrode 48 is
formed of a known material using a known method. An ohmic recess
portion may be formed to extend to a lower level than an interface
of the second nitride semiconductor layer 44 and the first nitride
semiconductor layer 43, and the ohmic electrode 46 and the ohmic
electrode 47 may be formed in the ohmic recess portion. The gate
electrode 48 may be formed to completely cover a bottom surface of
the recess portion 60. The gate electrode 48 may be also formed to
cover the bottom and side surfaces of the recess portion 60.
When etching is performed to the stacked body of the third nitride
semiconductor layer 45 of n-Al.sub.0.12Ga.sub.0.88N and the second
nitride semiconductor layer 44 formed of n-Al.sub.0.25Ga.sub.0.75N,
an etching amount varies. Due to variations in etching amount, a
threshold voltage Vth of the HFET varies. However, in this
embodiment, etching can be stopped with a remaining portion of the
second nitride semiconductor layer 44 having a very small
thickness. Moreover, variations in thickness of the remaining
portion of the second nitride semiconductor layer 44 can be
reduced. Thus, the HFET can be fabricated with high yield.
Fourth Embodiment
Hereinafter, a fourth embodiment of the present invention will be
described with reference to the accompanying drawings. FIG. 12 is a
cross-sectional view of a nitride semiconductor device according to
the fourth embodiment. In FIG. 12, each member also shown in FIG.
10 is identified by the same reference numeral.
In a HFET according to this embodiment, a p-type fourth nitride
semiconductor layer 49 is formed in a recess portion formed by
removing parts of a third nitride semiconductor layer 45 and a
second nitride semiconductor layer 44. The fourth nitride
semiconductor layer 49 is formed of, for example, p-GaN, p-AlGaN or
the like. A gate electrode 48 is formed on the fourth nitride
semiconductor layer 49. An ohmic electrode 46 and an ohmic
electrode 47 are formed in an ohmic recess portion and extend to a
lower level than an interface of the second nitride semiconductor
layer 44 and the first nitride semiconductor layer 43.
Hereinafter, a method for fabricating the HFET according to this
embodiment will be described. First, as in the third embodiment, a
buffer layer 42, a first nitride semiconductor layer 43, a second
nitride semiconductor layer 44 and a third nitride semiconductor
layer 45 are formed in this order on a substrate 41 using MOCVD or
the like.
Next, as shown in FIG. 13A, parts of the third nitride
semiconductor layer 45 and the second nitride semiconductor layer
44 are removed by PEC etching, thereby forming a recess portion 60.
When PEC etching is performed to a stacked body of an
n-Al.sub.0.12Ga.sub.0.88N layer and an n-Al.sub.0.25Ga.sub.0.75N
layer, as described in the first embodiment, etching stop occurs
with a remaining portion of the n-Al.sub.0.25Ga.sub.0.75N layer
having small thickness. The thickness of the
n-Al.sub.0.25Ga.sub.0.75N layer is about 5 nm or more. However, the
n-Al.sub.0.25Ga.sub.0.75N layer having a constant thickness can be
left remaining with a constant thickness and high
reproducibility.
Next, as shown in FIG. 13B, p-GaN, p-AlGaN or the like are regrown
entirely over the substrate 41, thereby forming a fourth nitride
semiconductor layer 49.
Next, as shown in FIG. 13C, the fourth nitride semiconductor layer
49 is removed so that only part of the fourth nitride semiconductor
layer 49 located in and around the recess portion. Thus, the fourth
nitride semiconductor layer 49 is provided so as to cover bottom
and side surfaces of the recess portion and also part of the third
nitride semiconductor layer 45 located around the recess
portion.
Next, as shown in FIG. 13D, parts of the third nitride
semiconductor layer 45, second nitride semiconductor layer 44 and
first nitride semiconductor layer 43 located at both sides of the
p-type fourth nitride semiconductor layer 49 are removed by
etching, thereby forming an ohmic recess portion 62.
Next, as shown in FIG. 13E, an ohmic electrode 46 and an ohmic
electrode 47 are formed to fill the ohmic recess portion. A gate
electrode 48 is formed on the fourth nitride semiconductor layer
49.
When etching is performed to the stacked body of the third nitride
semiconductor layer 45 formed of n-Al.sub.0.12Ga.sub.0.88N and the
second nitride semiconductor layer 44 formed of
n-Al.sub.0.25Ga.sub.0.75N, an etching amount varies. Due to
variations in etching amount, a threshold voltage Vth of the HFET
varies. However, in this embodiment, etching can be stopped with a
remaining portion of the second nitride semiconductor layer 44
having a very small thickness. Moreover, variations in thickness of
the remaining portion of the second nitride semiconductor layer 44
can be reduced. Thus, the HFET can be fabricated with high
yield.
In each of the third and fourth embodiments, the first nitride
semiconductor layer 43 is formed of GaN and the second nitride
semiconductor layer 44 is formed of n-Al.sub.0.25Ga.sub.0.75N.
However, the first nitride semiconductor layer 43 and the second
nitride semiconductor layer 44 may be formed of different materials
in a different combination, as long as the second nitride
semiconductor layer 44 has a smaller lattice constant than that of
the first nitride semiconductor layer 43 and a wider band gap than
that of the first nitride semiconductor layer 43. In general, there
is a tendency that as an In composition is increased, a lattice
constant is increased, and as an Al composition or a B composition
is increased, a lattice constant is reduced. There is also a
tendency that, as a lattice constant is reduced, a band gap is
increased. Thus, as a layer whose lattice constant is desired to be
small, a layer containing Al or B is used. Then, if the lattice
constant is desired to be even smaller, the Al composition or the B
composition of the layer is increased. As a layer whose lattice
constant is desired to be large, a layer which does not contain Al
and B, or a layer containing In is used. Therefore, nitride
semiconductor represented by a general formula
B.sub.wAl.sub.xGa.sub.yIn.sub.zN (where 0.ltoreq.w, x, y,
z.ltoreq.1, w+x+y+z=1), containing at least one of boron, aluminum,
gallium, and indium which are group III elements, and nitrogen
which is a group V element can be used in a proper combination. In
this case, the second nitride semiconductor layer 44 and the first
nitride semiconductor layer 43 are preferably formed so that the
ratio between their lattice constants in the a-axis direction is
0.972 or less. The second nitride semiconductor layer dose not have
to be n-type, but may be i-type. The third nitride semiconductor
layer 45 is formed to have a lattice constant that is smaller than
that of the first nitride semiconductor layer 43 and larger than
that of the second nitride semiconductor layer 44.
In each of the third and fourth embodiments, the substrate is
formed of sapphire. However, as long as a nitride semiconductor
layer can be grown on the substrate, the substrate may be formed
of, instead of sapphire, GaN, silicon, silicon carbide or the
like.
As described above, according to this disclosure, a nitride
semiconductor device in which degradation of device characteristics
due to etching damage and variations in device characteristics due
to variations in etching are suppressed can be achieved. Therefore,
the nitride semiconductor device of this disclosure is useful as a
nitride semiconductor device in which a recess portion is formed by
etching, and particularly, as a nitride semiconductor device
including a buried current confining layer.
The description of the embodiments of the present invention is
given above for the understanding of the present invention. It will
be understood that the invention is not limited to the particular
embodiments described herein, but is capable of various
modifications, rearrangements and substitutions as will now become
apparent to those skilled in the art without departing from the
scope of the invention. Therefore, it is intended that the
following claims cover all such modifications and changes as fall
within the true spirit and scope of the invention.
FIG. 14 is a cross-sectional view of a variation of the nitride
semiconductor device according to the first embodiment.
Moreover, the current confining layer 18 may be formed to have a
four or more layer structure. For example, when a fourth
semiconductor layer having a larger lattice constant than that of
the first semiconductor layer 18A is formed so as to be located
closer to the substrate 11 than the first semiconductor layer 18A,
a larger distortion can be generated at an interface between the
first semiconductor layer 18A and the second semiconductor layer
18B. Thus, the etching stop function can be further improved. Also,
the same effect can be achieved by forming a separate layer from
the current confining layer 18, as an intennediate layer 72 having
a larger lattice constant than that of the first semiconductor
layer 18A, between the current confining layer 18 and the active
layer 15, as is shown in FIG. 14.
* * * * *