Method for conditioning semiconductor wafers and/or hybrids

Reitinger March 8, 2

Patent Grant 7900373

U.S. patent number 7,900,373 [Application Number 10/511,335] was granted by the patent office on 2011-03-08 for method for conditioning semiconductor wafers and/or hybrids. This patent grant is currently assigned to ERS Electronic GmbH. Invention is credited to Erich Reitinger.


United States Patent 7,900,373
Reitinger March 8, 2011

Method for conditioning semiconductor wafers and/or hybrids

Abstract

The present invention provides a method for conditioning semiconductor wafers and/or hybrids having the steps: preparation of a space (1) which is at least partially enclosed and has a wafer/hybrid holding device (10) which is located therein and has the purpose of holding a semiconductor wafer and/or hybrid; and conduction of a dry fluid through the wafer/hybrid holding device (10) in order to heat-treat the wafer/hybrid holding device (10); wherein at least a portion of the fluid leaving the wafer/hybrid holding device (10) is used to condition the atmosphere within the space (1). The invention also provides a corresponding device for conditioning semiconductor wafers and/or hybrids.


Inventors: Reitinger; Erich (Munich, DE)
Assignee: ERS Electronic GmbH (Germering, DE)
Family ID: 28798441
Appl. No.: 10/511,335
Filed: April 15, 2003
PCT Filed: April 15, 2003
PCT No.: PCT/EP03/03937
371(c)(1),(2),(4) Date: May 05, 2005
PCT Pub. No.: WO03/088323
PCT Pub. Date: October 23, 2003

Prior Publication Data

Document Identifier Publication Date
US 20050227503 A1 Oct 13, 2005

Foreign Application Priority Data

Apr 15, 2002 [DE] 102 16 786
Current U.S. Class: 34/381; 324/750.08; 34/497; 34/495; 34/492; 118/712; 34/413
Current CPC Class: H01L 21/67109 (20130101)
Current International Class: F26B 11/06 (20060101)
Field of Search: ;34/77,78,80,380,381,413,495,497,492 ;118/712 ;324/760

References Cited [Referenced By]

U.S. Patent Documents
3269136 August 1966 Umano
3473022 October 1969 Koch et al.
4015340 April 1977 Treleven
4079522 March 1978 Ham
4258731 March 1981 Tsujimoto et al.
4434563 March 1984 Graalmann et al.
4520252 May 1985 Inoue
4531307 July 1985 Kuecker
4538899 September 1985 Landa et al.
4612978 September 1986 Cutchaw
4628616 December 1986 Shirai et al.
4628991 December 1986 Hsiao et al.
4693211 September 1987 Ogami et al.
4724621 February 1988 Hobson et al.
4776105 October 1988 Mishina et al.
4817299 April 1989 Pabst
4841645 June 1989 Bettcher et al.
4872835 October 1989 Tullis et al.
4974062 November 1990 Maier et al.
5038496 August 1991 Mishina et al.
5088006 February 1992 del Puerto et al.
5115858 May 1992 Fitch et al.
5155652 October 1992 Logan et al.
5186238 February 1993 del Puerto et al.
5191506 March 1993 Logan et al.
5192849 March 1993 Moslehi
5203401 April 1993 Hamburgen et al.
5209028 May 1993 McDermott et al.
5277030 January 1994 Miller
5285798 February 1994 Banerjee et al.
5310453 May 1994 Fukasawa et al.
5357984 October 1994 Farrier et al.
5369891 December 1994 Kamikawa
5504040 April 1996 Moslehi
5517828 May 1996 Calton et al.
5521790 May 1996 Ruckel et al.
5525780 June 1996 Moslehi
5526578 June 1996 Iyer
5540245 July 1996 Munakata et al.
5551245 September 1996 Calton et al.
5564281 October 1996 Calton et al.
5569330 October 1996 Schild et al.
5575079 November 1996 Yokomizo et al.
5582721 December 1996 Mita et al.
5595241 January 1997 Jelinek
5635070 June 1997 Allington et al.
5644467 July 1997 Steger et al.
5649428 July 1997 Calton et al.
5657553 August 1997 Tarui et al.
5671544 September 1997 Yokomizo et al.
5695795 December 1997 Murray et al.
5698070 December 1997 Hirano et al.
5709037 January 1998 Tanaka et al.
5715132 February 1998 Steger et al.
5715612 February 1998 Schwenkler
5720818 February 1998 Donde et al.
5738498 April 1998 Allington et al.
5755559 May 1998 Allington et al.
5775416 July 1998 Heimanson et al.
5815942 October 1998 Wu et al.
5826128 October 1998 Nishida
5835334 November 1998 McMillin et al.
5843512 December 1998 Daouse et al.
5862605 January 1999 Horie et al.
5864966 February 1999 Singletery
5869114 February 1999 Murray et al.
5885353 March 1999 Strodtbeck et al.
5901030 May 1999 Logan et al.
5904776 May 1999 Donde et al.
5931721 August 1999 Rose et al.
5940985 August 1999 Kamikawa et al.
5950328 September 1999 Ichiko et al.
5950723 September 1999 Heimanson et al.
5956859 September 1999 Matsumoto et al.
5967156 October 1999 Rose et al.
5989462 November 1999 Buazza et al.
5994662 November 1999 Murugesh
5996242 December 1999 Matsumoto et al.
6022418 February 2000 Iwabuchi
6026589 February 2000 Yao et al.
6032382 March 2000 Matsumoto et al.
6045624 April 2000 Kamikawa et al.
6050275 April 2000 Kamikawa et al.
6059567 May 2000 Bolton et al.
6067727 May 2000 Muraoka
6071408 June 2000 Allington et al.
6077357 June 2000 Rossman et al.
6080272 June 2000 Langley et al.
6083344 July 2000 Hanawa et al.
6098408 August 2000 Levinson et al.
6099643 August 2000 Ohtani et al.
6108932 August 2000 Chai
6109206 August 2000 Maydan et al.
RE36897 October 2000 Murray et al.
6128830 October 2000 Bettcher et al.
6131588 October 2000 Kamikawa et al.
6134807 October 2000 Komino et al.
6158449 December 2000 Kamikawa
6170268 January 2001 Elfert et al.
6170496 January 2001 Chen et al.
6174155 January 2001 Buazza et al.
6174157 January 2001 Daouse et al.
6182602 February 2001 Redeker et al.
6189483 February 2001 Ishikawa et al.
6192600 February 2001 Bergman
6194571 February 2001 Lukasavage
6199564 March 2001 Yokomizo
6201117 March 2001 Lukasavage
6203406 March 2001 Rose et al.
6210541 April 2001 Cooney et al.
6212789 April 2001 Kato et al.
6214988 April 2001 Lukasavage et al.
6216364 April 2001 Tanaka et al.
6230499 May 2001 Hohne
6244282 June 2001 Weber
6254809 July 2001 Parent et al.
6265573 July 2001 Lukasavage
6286451 September 2001 Ishikawa et al.
6290274 September 2001 Montoya
6319329 November 2001 Kamikawa et al.
6319410 November 2001 Allington et al.
6327994 December 2001 Labrador
6334266 January 2002 Moritz et al.
6342104 January 2002 Kamikawa et al.
6354311 March 2002 Kimura et al.
6367928 April 2002 Buazza et al.
6368523 April 2002 Buazza et al.
6373679 April 2002 Qiao et al.
6374512 April 2002 Guo et al.
6375758 April 2002 Nakashima et al.
6377437 April 2002 Sexton et al.
6398875 June 2002 Cotte et al.
6401732 June 2002 Bergman
6413355 July 2002 Kamikawa et al.
6418728 July 2002 Monroe
6425953 July 2002 Johnson
6428724 August 2002 Lukasavage et al.
6430841 August 2002 Borkowski et al.
6436739 August 2002 Wickboldt et al.
6446355 September 2002 Jones et al.
6460721 October 2002 Bowen et al.
6461801 October 2002 Wang
6473993 November 2002 Yagi et al.
6491045 December 2002 Kamikawa et al.
6511616 January 2003 Parent et al.
6549026 April 2003 DiBattista et al.
6552560 April 2003 Melgaard et al.
6562146 May 2003 DeYoung et al.
6564469 May 2003 Jahanbani et al.
6567258 May 2003 Sexton et al.
6596093 July 2003 DeYoung et al.
6598312 July 2003 Kim et al.
6602351 August 2003 DeYoung et al.
6605955 August 2003 Costello et al.
6613157 September 2003 DeYoung et al.
6615510 September 2003 Jones et al.
6628503 September 2003 Sogard
6634177 October 2003 Lin et al.
6641678 November 2003 DeYoung et al.
6646233 November 2003 Kanno et al.
6649883 November 2003 Iwamoto et al.
6684652 February 2004 Kim et al.
6700099 March 2004 Cole et al.
6736668 May 2004 Cheng et al.
6740853 May 2004 Johnson et al.
6746543 June 2004 Kamikawa et al.
6771086 August 2004 Lutz et al.
6796054 September 2004 Minami et al.
6808567 October 2004 Takeshita et al.
6838390 January 2005 Langley et al.
6853953 February 2005 Brcka et al.
6895179 May 2005 Kanno et al.
6897940 May 2005 Sogard
6904702 June 2005 Sotojima et al.
6905984 June 2005 Kellerman et al.
6939899 September 2005 Buazza et al.
6966949 November 2005 Kobayashi et al.
6969830 November 2005 Cole et al.
6986214 January 2006 Minami et al.
7002341 February 2006 Baudenbacher et al.
7024798 April 2006 Minami et al.
7046025 May 2006 Schneidewind et al.
7072165 July 2006 Kellerman et al.
7111467 September 2006 Apparao et al.
7138606 November 2006 Kanno et al.
7156951 January 2007 Gao et al.
7195693 March 2007 Cowans
7215697 May 2007 Hill
7225819 June 2007 Jackson
7271604 September 2007 Reitinger
7276485 October 2007 Cerreta et al.
7314506 January 2008 Vininski et al.
7329389 February 2008 Horovitz et al.
7347006 March 2008 Moriya et al.
7393757 July 2008 Miyamoto et al.
7425838 September 2008 Itakura et al.
7442275 October 2008 Cowans
7447025 November 2008 Chen et al.
7479463 January 2009 Kulp et al.
7489718 February 2009 Hill
7517498 April 2009 Fredrick
7520068 April 2009 Yi et al.
7547358 June 2009 Shapiro
7615970 November 2009 Gimlan
2001/0025431 October 2001 Kitano et al.
2002/0000198 January 2002 Ishikawa et al.
2002/0053573 May 2002 Bowen et al.
2002/0066726 June 2002 Cole et al.
2002/0075625 June 2002 Sexton et al.
2002/0130276 September 2002 Sogard
2002/0135389 September 2002 Melgaard et al.
2002/0142593 October 2002 Langley et al.
2002/0166256 November 2002 Samoilov et al.
2002/0174667 November 2002 Kim et al.
2003/0015294 January 2003 Wang
2003/0033116 February 2003 Brcka et al.
2003/0039299 February 2003 Horovitz et al.
2003/0154723 August 2003 Lin et al.
2003/0155939 August 2003 Lutz et al.
2003/0168439 September 2003 Kanno et al.
2003/0172542 September 2003 Minami et al.
2003/0183960 October 2003 Buazza et al.
2003/0213793 November 2003 Cole et al.
2003/0228772 December 2003 Cowans
2004/0013956 January 2004 Sogard
2004/0022028 February 2004 Hildebrandt
2004/0025790 February 2004 Ben
2004/0045184 March 2004 Takeshita et al.
2004/0045813 March 2004 Kanno et al.
2004/0055540 March 2004 Kanno et al.
2004/0070415 April 2004 Schneidewind et al.
2004/0076411 April 2004 Kanno et al.
2004/0123484 July 2004 Yoshikawa et al.
2004/0129015 July 2004 Apparao et al.
2004/0145366 July 2004 Baudenbacher et al.
2004/0216325 November 2004 Minami et al.
2005/0016467 January 2005 Hsiao et al.
2005/0018376 January 2005 Park et al.
2005/0032332 February 2005 Miyamoto et al.
2005/0041364 February 2005 Kellerman et al.
2005/0042768 February 2005 Fredrick
2005/0048781 March 2005 Langley et al.
2005/0069011 March 2005 Hill
2005/0079737 April 2005 Kellerman et al.
2005/0123665 June 2005 Cerreta et al.
2005/0160619 July 2005 Minami et al.
2005/0183283 August 2005 Evanyk et al.
2005/0217583 October 2005 Cole et al.
2006/0005420 January 2006 Deguchi et al.
2006/0023395 February 2006 Hsiao et al.
2006/0086247 April 2006 Vininski et al.
2006/0137822 June 2006 Cowans
2006/0158207 July 2006 Reitinger
2006/0242967 November 2006 Lin et al.
2006/0252000 November 2006 Hayashi et al.
2006/0274474 December 2006 Lee et al.
2006/0275547 December 2006 Lee et al.
2007/0024299 February 2007 Itakura et al.
2007/0084496 April 2007 Edey
2007/0089834 April 2007 Brillhart et al.
2007/0091538 April 2007 Buchberger et al.
2007/0091539 April 2007 Buchberger et al.
2007/0091540 April 2007 Brillhart et al.
2007/0091541 April 2007 Buchberger et al.
2007/0097637 May 2007 Chen et al.
2007/0135880 June 2007 Eggers et al.
2007/0169373 July 2007 Aoki et al.
2007/0206652 September 2007 Hill
2007/0214631 September 2007 Landrigan
2007/0220775 September 2007 Miya
2008/0006207 January 2008 Miyagawa et al.
2008/0052947 March 2008 Miya
2008/0083700 April 2008 Bernard et al.
2008/0101434 May 2008 Horovitz et al.
2008/0127508 June 2008 Ohno et al.
2008/0200039 August 2008 Li et al.
2008/0277885 November 2008 Duff et al.
2009/0081449 March 2009 Ohwaki et al.
2009/0085444 April 2009 Alvarez Icaza Rivera et al.
2009/0119981 May 2009 Drozd et al.
2009/0149930 June 2009 Schenck
2009/0179365 July 2009 Lerner et al.
2009/0188211 July 2009 Galliher et al.
2009/0205363 August 2009 de Strulle
2009/0216910 August 2009 Duchesneau
2009/0255457 October 2009 Shapiro
2009/0270954 October 2009 Schenck
2009/0272028 November 2009 Drozd et al.
2009/0305397 December 2009 Dodgson et al.
2010/0005763 January 2010 Bloom
2010/0101771 April 2010 Roy et al.
Foreign Patent Documents
511928 Nov 1992 EP
641017 Mar 1995 EP
675525 Oct 1995 EP
0732557 Sep 1996 EP
57198296 Dec 1982 JP
62042725 Feb 1987 JP
62101688 May 1987 JP
63010522 Jan 1988 JP
01053420 Mar 1989 JP
01213662 Aug 1989 JP
01231329 Sep 1989 JP
03234021 Oct 1991 JP
03267095 Nov 1991 JP
04168716 Jun 1992 JP
05154292 Jun 1993 JP
06045310 Feb 1994 JP
07263526 Oct 1995 JP
08266798 Oct 1996 JP
10026492 Jan 1998 JP
2000310459 Nov 2000 JP
2002299319 Oct 2002 JP
2003090892 Mar 2003 JP
2007027218 Feb 2007 JP
2007235171 Sep 2007 JP
2009091648 Apr 2009 JP
2010129766 Jun 2010 JP
WO 9719303 May 1997 WO
9910927 Mar 1999 WO
WO 0103794 Jan 2001 WO
WO 0125706 Apr 2001 WO

Other References

First Examiner's Report dated Feb. 23, 2009 in corresponding Canadian Appln. No. 2,481,260. cited by other.

Primary Examiner: Gravini; Stephen M.

Claims



The invention claimed is:

1. A method for conditioning semiconductor wafers and/or hybrids comprising: preparing a space which is essentially enclosed by a container and has a wafer/hybrid chuck which is located therein and has the purpose of holding a semiconductor wafer and/or hybrid applied to the wafer/hybrid chuck; pre-cooling a dry fluid in a single heat exchanger outside the space; conducting the pre-cooled fluid out of the single heat exchanger into the wafer/hybrid chuck via a first line, and then through the wafer/hybrid chuck to cool the wafer/hybrid chuck; conducting at least a portion of the fluid having been conducted through the wafer/hybrid chuck back to the single heat exchanger via a second line out of the wafer/hybrid chuck to the single heat exchanger; and heating the portion, by using a residual coldness of the portion to cool the single heat exchanger to contribute to the pre-cooling of the fluid in the single heat exchanger, wherein the heated portion is conducted via a third line from the single heat exchanger into the space, before being allowed to flow out within the space to condition the atmosphere in the space, and wherein the same single heat exchanger both: pre-cools and conducts the fluid to the wafer/hybrid chuck, and receives back the fluid from the wafer/hybrid chuck to contribute to the pre-cooling of the fluid.

2. The method according to claim 1, wherein the portion is firstly heat-treated and then allowed to flow out within the space.

3. The method according to claim 1, wherein the portion is heat-treated outside the space and then fed back to the space.

4. The method according to claim 1, wherein the portion is allowed to flow out within the space directly after it leaves the wafer/hybrid chuck.

5. A method for conditioning semiconductor wafers and/or hybrids, comprising: preparing a space which is essentially enclosed by a container and has a wafer/hybrid chuck which is located therein and has the purpose of holding a semiconductor wafer and/or hybrid applied to the wafer/hybrid chuck; pre-cooling a dry fluid in a single heat exchanger outside the space; conducting the pre-cooled fluid out of the single heat exchanger into the wafer/hybrid chuck via a first line, and then through the wafer/hybrid chuck to cool the wafer/hybrid chuck; wherein at least a portion of the fluid having been conducted through the wafer/hybrid chuck is used to condition the atmosphere within the space; wherein a first portion of the fluid having been conducted through the wafer/hybrid chuck is firstly conducted via a second line out of the wafer/hybrid chuck back to the single heat exchanger, then heated by using a residual coldness of the first portion to cool the single heat exchanger to contribute to the pre-cooling of the fluid in the single heat exchanger, and then conducted via a third line from the single heat exchanger into the space, before being allowed to flow out within the space, wherein a second portion having been conducted through the wafer/hybrid chuck is allowed to flow out within the space directly after it leaves the wafer/hybrid chuck, and wherein the same single heat exchanger both: pre-cools and conducts the fluid to the wafer/hybrid chuck, and receives back the fluid from the wafer/hybrid chuck to contribute to the pre-cooling of the fluid.

6. The method according to claim 5, wherein at least one of the first and second portions can be regulated in terms of flow rate.

7. The method according to claim 2, wherein the portion is heat-treated in that it is used for precooling the fluid, outside the space before said portion is allowed to flow out within the space.

8. The method according to claim 1, wherein the pre-cooled fluid, when conducted through the wafer/hybrid chuck in order to cool the wafer/hybrid chuck, crosses the wafer/hybrid chuck in a cooling coil or cooling pipe.

9. The method according to claim 5, wherein the pre-cooled fluid, when conducted through the wafer/hybrid chuck in order to cool the wafer/hybrid chuck, crosses the wafer/hybrid chuck in a cooling coil or cooling pipe.
Description



The present invention relates to a method and a device for conditioning semiconductor wafers and/or hybrids.

It is known to carry out test measurements on semiconductor wafers typically in a temperature range between -200.degree. C. and +400.degree. C. For the heat treatment a semiconductor wafer is applied to a sample stage which is cooled and/or heated according to the desired temperature. In the process it is necessary to ensure that the temperature of the semiconductor wafer does not drop below the dew point of the surrounding gaseous medium since otherwise moisture condenses on the surface of the wafer or icing occurs, which impedes or prevents the test measurements.

FIG. 5 shows a schematic cross-sectional view of a conditioning device for the purpose of explaining the problems on which the present invention is based.

In FIG. 4, reference symbol 1 designates a space in a container 5 in which a sample stage 10 which can be temperature controlled is provided and on which a semiconductor wafer (not shown) can be positioned for test purposes. The volume of the container 5 is usually between 400 and 800 litres.

The space 1 is enclosed essentially by the walls of the container 5 which have bushings for electrical lines and media supply lines as well as, if appropriate, bushings for probes which are to be attached externally and with which the test measurements semiconductor wafer shown are to be carried out. However, this space 1 must not be hermetically sealed by the container 5 depending on the application but must at least be enclosed to such an extent that undesired penetration of moist ambient air can be prevented by building up an internal excess pressure.

The sample stage 10 (also referred to as chuck) has a thermal insulation 15 via which it is connected to a usually movable base 20. A corresponding movement mechanism (not shown) is generally adjustable in the X, Y and Z directions. If the movement mechanism is not located in the container, a seal has to be provided between the base and container.

Furthermore, a heating device 90, which can be supplied from the outside with electrical current for heating purposes and which has a temperature probe (not shown), is integrated into the sample stage 10.

Reference symbol 100 designates a dew point sensor by means of which the dew point within the container 5 can be determined and which can supply a corresponding signal to a monitor 101 outside the container 5. The dew point sensor 100 is used in particular for the sake of reliability when opening the device so that, for example, compensatory heating can be carried out in order to avoid condensation of water.

Furthermore, outflow elements 30 (oBdA. only two are shown) via which dried air from outside, or a similar fluid such as, for example, nitrogen, can be introduced via a line r1 into the container in order to drive out moist ambient air from the container 5. This air is firstly fed externally to an air drier 3 via a line r00 and then fed into the line r1.

A separate unit, which is connected to the container 5 via a corresponding electrical line 11 and a media supply line r2, is the temperature control rack 2 which has the following devices.

Reference symbol 80 designates a temperature controller which can regulate the temperature of the sample stage 10 by heating by means of the heating device 90, the sample stage 10 simultaneously or alternatively being rinsed with air for cooling purposes, as is explained in more detail below.

Reference symbol 70 designates a temperature regulating device to which dried air is fed via the lines r0 and i1 from, for example, a gas bottle or from an air drier, and which has a heat exchanger 95 which is connected to cooling assemblies 71, 72 by means of which it can be cooled to a predetermined temperature.

The dried air which is fed via the lines r0, i1 is conducted through the heat exchanger 95 and then fed via the supply line r2 into the container 5 to the sample stage 10, through which it crosses in corresponding cooling coils or cooling pipes (not shown). The dried air which has cooled the sample stage 10 leaves it via the line r3 and is conducted out of the container 5 to the atmosphere.

The dried air, which is conducted into the container 5 via the outflow elements 30 in order to condition the atmosphere of the container 5 is usually kept at room temperature so that only the surface of the sample stage 10 is kept at the desired measuring temperature, for example -20.degree. C., but the other elements in the container 5 are approximately at room temperature. This dried air which is fed via the outflow elements 30 flows out of the container 5 through slits or gaps (not shown) or a separate outlet line.

The fact that a relatively high consumption of dried air occurs because said air, on the one hand for conditioning the atmosphere and on the other hand for cooling the sample stage 10, is blown through the container 5 and into the atmosphere, proves disadvantageous in this known device for conditioning semiconductor wafers. As a result, the consumption of dried air is relatively high. A failure of the air drier 3 also brings about immediate icing of the test wafer at corresponding temperatures.

For this reason, the object of the present invention is to specify a method and a device for conditioning semiconductor wafers and/or hybrids, which permit more efficient conditioning.

The method according to the invention having the features of claim 1 and the corresponding device according to claim 9 have, in comparison with the known solution approach, the advantage that the dried gas, for example the dried air, can be used efficiently. Further advantages are the high level of operational reliability and the fact that freedom from ice and condensation is ensured because the dry air leaving the wafer/hybrid holding device is always below the dew point of the temperature at the wafer/hybrid holding device.

The idea on which the present invention is based is that at least a portion of the gas leaving the wafer/hybrid holding device is used to condition the atmosphere within the space. In the present invention, cooling air is therefore used simultaneously at least partially as dry air. It is advantageous if the portion of gas is firstly heat-treated and then allowed to flow out within the space.

For example, the portion is heat-treated outside a container and then fed back to the container. A particular advantage of this example is that a higher level of cooling efficiency is made possible by correspondingly feeding back the air from the sample stage to outside the container. In other words, the fed-back, cooled air can be additionally used either for precooling the fed-in dried air or for cooling specific assemblies and not only for cooling the wafer/hybrid holding device.

However, it is alternatively or additionally possible for a portion of the gas to be allowed to flow out within the container directly after it leaves the sample stage. Since it is not expedient to allow it to flow out directly at all temperatures, a corresponding regulating valve is to be provided for this portion of gas.

Advantageous developments and improvements of the respective subject matter of the invention are given in the subclaims.

According to one preferred development, the line device has a first line via which the fluid can be conducted from outside the space into the wafer/hybrid holding device, a second line via which the fluid can be conducted from the wafer/hybrid holding device to outside the space, and a third line via which the fluid can be fed back from outside the space into the space. A temperature regulating device is provided between the second and third lines.

According to a further preferred development, outflow elements are provided at the end of the third line.

According to a further preferred development, the line device has a first line via which the fluid can be conducted from outside the space into the wafer/hybrid holding device, and a fourth line via which the fluid can be conducted from the wafer/hybrid holding device into the space.

According to a further preferred development, the line device has a second line via which the fluid can be conducted from the wafer/hybrid holding device to outside the space, and a third line via which the fluid can be fed back into the space from outside the space. A temperature regulating device is provided between the second and third lines.

According to a further preferred development, a valve is provided for regulating the flow rate of the fourth line.

According to a further preferred development, the temperature regulating device has a heating device.

According to a further preferred development, the temperature regulating device has a heat exchanger to which at least a portion of the fluid leaving the space can be conducted.

According to a further preferred development, the heat exchanger is used to precool the fed-in fluid.

According to a further preferred development, the line device is designed in such a way that the portion leaving the heat exchanger can be fed back at least partially into the space in order to condition the atmosphere.

According to a further preferred development, a further line is provided via which dry fluid can additionally be conducted directly into the space from outside the space.

According to a further preferred development, the space is essentially enclosed by a container.

Exemplary embodiments of the invention are illustrated in drawings and will be explained in more detail in the following description. In said drawings:

FIG. 1 is a schematic illustration of a first embodiment of the conditioning device according to the invention;

FIG. 2 is a schematic illustration of a second embodiment of the conditioning device according to the invention;

FIG. 3 is a schematic cross-sectional view of a third embodiment of the conditioning device according to the invention;

FIG. 4 is a schematic cross-sectional view of a fourth embodiment of the conditioning device according to the invention; and

FIG. 5 is a schematic cross-sectional view of a conditioning device for the purpose of explaining the problems on which the present invention is based.

In the figures, identical reference symbols designate identical or functionally identical components.

FIG. 1 is a schematic illustration of a first embodiment of the conditioning device according to the invention.

In what follows, components which have already been described above in conjunction with FIG. 5 will not be described again in order to avoid repetitions.

Reference symbol 80' designates a modified temperature controller which can not only regulate the temperature of the sample stage 10 by means of the heating device 90 but is also coupled to the dew point sensor 100 via a line 12 and can thus initiate automatic compensatory heating when there is a risk of condensation of water/icing.

In the first embodiment according to FIG. 1, a heating device 105 is additionally integrated into the temperature regulating device 70 and is not in direct contact with the heat exchanger 95. Instead of ending at the ambient atmosphere, the line r3 is conducted to the heating device 105 so that the dry air which has left the sample stage 10 is, as it were, fed back to the temperature control rack 2 and after it has passed through the heating device 105 it is conducted back via the line r4 to the container 5 in which it flows out into the space 1 through outflow elements 40 for conditioning the atmosphere.

The reference symbol 4 designates a temperature sensor for sensing the temperature in the space 1, which sensor supplies a corresponding temperature signal TS to the temperature regulating device 70 which is used to regulate the temperature by means of the heating device 105.

By virtue of this arrangement, the dried air can fulfil a double function, specifically firstly cool the sample stage 10 and then condition the atmosphere of the space 1 before it is fed back to the ambient atmosphere through openings in the container 5, and is thus used more effectively.

FIG. 2 is a schematic illustration of a second embodiment of the conditioning device according to the invention.

In the second embodiment according to FIG. 2, a line r5 branches off from the line r2 directly before the sample stage 10 and is also conducted through the sample stage 10 in the form of a cooling coil or a cooling pipe, but then leaves the sample stage 10 at a different point from that of the line r3 and from there via a controllable outlet valve 45 which conducts corresponding dried air directly into the container 5 after it leaves the sample stage 10.

Since this would lead to problems at very low temperatures in certain applications, this option of conducting the dry gas via the line r5 into the container 1 can be regulated by means of the outlet valve 45. The regulation can be carried out in a customary way, for example by remote control or in a wire-controlled fashion.

Otherwise the second embodiment is of identical design to the first embodiment described above.

FIG. 3 shows a schematic cross-sectional view of a third embodiment of the conditioning device according to the invention.

Reference symbol 80' designates a further modified temperature controller which also controls the temperature regulating device 70 via the control line ST and thus plays the role of a central temperature control system.

In the third embodiment according to FIG. 3, a portion of the dry air which is fed back via the line r3 is branched off before the heating device 105 via line i3 and conducted through the heat exchanger 95 where it contributes to the cooling in the same way as the dry air which is freshly fed in via the lines r0, i1. The dry air leaves the heat exchanger 95 via the line i4, and directly after the heating device 105 it is combined with the air which has flowed through the heating device 105. From the corresponding junction point, this dried air is conducted, in precisely the same way as in the first embodiment, via the line r4 and the outflow elements 40 into the container 5 for conditioning its atmosphere.

Furthermore, this embodiment provides a controllable mixing valve 46 and a bypass line r10 by means of which the heat exchanger 95 can be bypassed.

The particular advantage of this embodiment is that a "residual coldness" of the dried air which flows back from the sample stage 10 can be used to cool the heat exchanger and at the same time can be fed back into the container 5 after heating.

Otherwise, the second embodiment is constructed in the same way as the first embodiment described above.

FIG. 4 is a schematic cross-sectional view of a fourth embodiment of the conditioning device according to the invention.

Reference symbol 85 in FIG. 4 designates an additional gas-temperature controller to which dry gas, for example dried air, is fed via lines r0, i2 from the same gas source as that of the heat exchanger 95, said air being placed at a predefined temperature by said controller and then conducted into the interior of the container 5 via the line r1 and via the outflow element 30.

The direct feeding in of dried air via the outflow element 30 in the container 5 is therefore additionally provided in this embodiment but it can also be configured in such a way that it can be switched off if the throughflow rate through the sample stage 10 is completely sufficient for conditioning the atmosphere within the container 5.

Although the present invention has been described above with reference to preferred exemplary embodiments, it is not restricted to them but rather can be modified in a variety of ways.

In particular it is to be noted that the exemplary embodiments above can of course be combined with one another. Additional line connections and regulating valves for the respective gas flow, which can be controlled manually or electrically, can also be provided.

In addition, the residual coldness of the fed-back gas can be used not only for cooling the heat exchanger 95 but also for cooling any desired other assemblies or heat exchangers before said residual coldness is fed back to the container 5.

The invention is also not restricted to gaseous dried air but can in principle be applied to any other fluids.

Furthermore, the wafer/hybrid holding device is not restricted to a sample stage or chuck but rather can be varied as desired, for example as a clamp device or the like.

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