U.S. patent number 7,772,048 [Application Number 11/678,327] was granted by the patent office on 2010-08-10 for forming semiconductor fins using a sacrificial fin.
This patent grant is currently assigned to Freescale Semiconductor, Inc.. Invention is credited to Rickey S. Brownson, Robert E. Jones.
United States Patent |
7,772,048 |
Jones , et al. |
August 10, 2010 |
Forming semiconductor fins using a sacrificial fin
Abstract
A semiconductor device is made by steps of removing portions of
a first capping layer, removing portions of a sacrificial layer,
recessing sidewalls, and forming fin structures. The step of
removing portions of the first capping layer forms a first capping
structure that covers portions of the sacrificial layer. The step
of removing portions of the sacrificial layer removes portions of
the sacrificial layer that are not covered by the first capping
structure to define an intermediate structure. The step of
recessing the sidewalls recesses sidewalls of the intermediate
structure relative to edge regions of the first capping structure
to form a sacrificial structure having recessed sidewalls. The step
of forming fin structures forms fin structures adjacent to the
recessed sidewalls.
Inventors: |
Jones; Robert E. (Austin,
TX), Brownson; Rickey S. (Cedar Park, TX) |
Assignee: |
Freescale Semiconductor, Inc.
(Austin, TX)
|
Family
ID: |
39716363 |
Appl.
No.: |
11/678,327 |
Filed: |
February 23, 2007 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20080206934 A1 |
Aug 28, 2008 |
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Current U.S.
Class: |
438/142; 438/696;
438/526; 438/284; 438/157; 438/525; 438/283; 257/E21.205;
257/E29.131; 438/639; 438/401; 438/365; 257/E21.235 |
Current CPC
Class: |
H01L
29/66795 (20130101); H01L 21/84 (20130101); H01L
27/1203 (20130101); H01L 29/785 (20130101) |
Current International
Class: |
H01L
21/8232 (20060101) |
Field of
Search: |
;438/142 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Toledo; Fernando L
Assistant Examiner: Singal; Ankush k
Attorney, Agent or Firm: Clingan, Jr.; James L. Rodriguez;
Robert A.
Claims
The invention claimed is:
1. A method for forming a semiconductor device comprising: forming
a first fin structure having a first semiconductor fin and a
capping layer overlying the first semiconductor fin, wherein the
first semiconductor fin has a first sidewall and a second sidewall
aligned with sides of the capping layer; trimming the first
semiconductor fin resulting in the capping layer having a first
overhang extending past first sidewall and the second overhand
extending past the second sidewall; epitaxially growing a second
semiconductor fin on the first sidewall under the first overhang
and a third semiconductor fin on the second sidewall under the
second overhang; removing the capping layer to expose first
semiconductor fin; and removing the first semiconductor fin by
performing an etch that is selective between the first
semiconductor fin and the second and third semiconductor fins.
2. The method of claim 1, wherein the step of trimming comprises
performing an isotropic etch.
3. The method of claim 1, wherein the step of trimming comprises
growing oxide on the first and second sidewalls and thereafter
removing the.
4. The method of claim 1, further comprising: forming a first gate
dielectric layer over the second and third fins; forming a first
gate electrode layer over the first gate dielectric layer; and
removing portions of the first gate electrode layer to form a first
gate electrode that extends over portions of the second and third
fins.
5. The method of claim 1, wherein the first semiconductor fin
comprises silicon germanium and the second and third semiconductor
fins comprise silicon.
6. A method for forming a semiconductor device comprising: forming
a capping structure over a semiconductor layer; removing portions
of the semiconductor layer not protected by the capping structure
to form a first semiconductor fin from the semiconductor layer,
wherein the first semiconductor fin has a first sidewall and a
second sidewall; trimming the first semiconductor fin resulting in
the capping layer having a first overhang extending past first
sidewall and the second overhand extending past the second
sidewall; epitaxially growing a second semiconductor fin on the
first sidewall under the first overhang and a third semiconductor
fin on the second sidewall under the second overhang; removing the
capping structure to expose the first semiconductor fin; and
removing the first semiconductor fin by performing an etch that is
selective between the first semiconductor fin and the second and
third semiconductor fins.
7. The method of claim 6 further comprising: forming a gate
dielectric layer over the second and third semiconductor fins;
forming a gate electrode layer over the gate dielectric layer; and
removing portions of the gate electrode layer to form a gate
electrode structure that extends over the second and third
semiconductor fins.
8. The method of claim 7, wherein removing portions of the
sacrificial layer not protected by the capping structure exposes
portions of an underlying seed layer.
9. The method of claim 8 further comprising removing a first
portion of the underlying seed layer prior to removing portions of
the sacrificial structure in regions between the semiconductive fin
structures, wherein after removing portions of the sacrificial
structure in regions between fin structures, the fin structures are
contiguous with a remaining portion of the underlying seed
layer.
10. The method of claim 9, wherein the underlying seed layer is
further characterized as a monocrystalline seed layer.
11. A method for forming a FinFET transistor comprising: forming a
first semiconductor material over a semiconductor seed layer to
form a sacrificial layer; forming a capping structure over the
sacrificial layer to define exposed sacrificial layer regions and
unexposed sacrificial layer regions, wherein the unexposed
sacrificial layer regions are below the capping structure; removing
sacrificial layer material and underlying seed layer material from
the exposed sacrificial layer regions to define a first
semiconductor fin having a first sidewall and a second sidewall;
removing material from the first semiconductor fin resulting in
having the first and second sidewalls recessed relative to a
periphery of the capping structure whereby the capping structure
has a first overhang extending past the first sidewall and a second
overhang extending past the second sidewall; epitaxially growing a
layer of semiconductor material along the first and second
sidewalls of the sacrificial structure, thereby substantially
defining a second semiconductor fin on the first sidewall and a
third semiconductor fin on the second sidewall; removing the
capping structure to expose the first semiconductor fin; removing
the first semiconductor fin to leave the second and third
semiconductor fins; forming a gate dielectric layer over the second
and third semiconductor fins; forming a gate electrode layer over
the gate dielectric layer; and removing portions of the gate
electrode layer to form a gate electrode structure that extends
over the second and third semiconductor fins.
12. The method of claim 11, wherein removing material is further
characterized as isotropically etching the first semiconductor
fin.
13. The method of claim 11, wherein the step of epitaxially growing
is further characterized as epitaxially depositing a silicon film
along the first and second sidewalls.
Description
RELATED APPLICATIONS
This application is related to U.S. patent application Ser. No.
11/678322, titled "Semiconductor Fin Integration Using a
Sacrificial Fin," filed on even date herewith, filed by the
inventors hereof, and assigned to the assignee hereof,
BACKGROUND
1. Field
This disclosure relates generally to forming semiconductor fins for
use in making semiconductor devices, and more specifically, to
forming the semiconductor fins using a sacrificial fin.
2. Related Art
The use of semiconductor fins in making semiconductor devices
provides advantages over planar semiconductor devices. Transistors
having a fin for the channel can be made to have lower leakage and
higher drive because the gate, being on two sides of the channel,
has more control of the channel. One of the desires generally
relevant to semiconductor devices, including those using
semiconductor fins, is to increase the density; to increase the
number of devices in a given area. In the case of semiconductor
fins, the minimum fins spacing is lithographically limited.
Transistors using fins, however, are not expected to fit all of the
requirements of an integrated circuit design. Thus, one issue is
integrating the fins with planar transistors while improving
density.
Thus, there is a need to improve the density of semiconductor
devices using fins while also having desirable electrical
characteristics, and a further desire is to efficiently integrate
semiconductor fins with planar transistors.
BRIEF DESCRIPTION OF THE DRAWINGS
The present invention is illustrated by way of example and is not
limited by the accompanying figures, in which like references
indicate similar elements. Elements in the figures are illustrated
for simplicity and clarity and have not necessarily been drawn to
scale.
FIG. 1 is a cross section of a semiconductor device at a stage in
processing according to an embodiment of the invention;
FIG. 2 is a cross section of the semiconductor device of FIG. 1 at
a subsequent stage in processing;
FIG. 3 is a cross section of the semiconductor device of FIG. 2 at
a subsequent stage in processing;
FIG. 4 is a cross section of the semiconductor device of FIG. 3 at
a subsequent stage in processing;
FIG. 5 is a cross section of the semiconductor device of FIG. 4 at
a subsequent stage in processing;
FIG. 6 is a cross section of the semiconductor device of FIG. 5 at
a subsequent stage in processing;
FIG. 7 is a cross section of a semiconductor device at a stage in
processing according to another embodiment of the invention;
FIG. 8 is a cross section of the semiconductor device of FIG. 7 at
a subsequent stage in processing;
FIG. 9 is a cross section of the semiconductor device of FIG. 8 at
a subsequent stage in processing;
FIG. 10 is a cross section of the semiconductor device of FIG. 9 at
a subsequent stage in processing;
FIG. 11 is a cross section of the semiconductor device of FIG. 10
at a subsequent stage in processing;
FIG. 12 is a cross section of the semiconductor device of FIG. 11
at a subsequent stage in processing;
FIG. 13 is a cross section of the semiconductor device of FIG. 12
at a subsequent stage in processing;
FIG. 14 is a cross section of the semiconductor device of FIG. 13
at a subsequent stage in processing;
FIG. 15 is a cross section of the semiconductor device of FIG. 14
at a subsequent stage in processing;
FIG. 16 is a cross section of the semiconductor device of FIG. 15
at a subsequent stage in processing;
FIG. 17 is a cross section of the semiconductor device of FIG. 16
at a subsequent stage in processing;
FIG. 18 is a cross section of the semiconductor device of FIG. 17
at a subsequent stage in processing;
FIG. 19 is a cross section of a semiconductor device at stage in
processing for an alternative to a obtaining a semiconductor device
similar to that of FIG. 10; and
FIG. 20 is a cross section of the semiconductor device of FIG. 19
at a subsequent stage in processing.
DETAILED DESCRIPTION
In one aspect, a sacrificial fin is formed of silicon germanium
(SiGe) with an overlying nitride layer. The SiGe fin is trimmed to
result in the silicon nitride (nitride) layer having an overhang
extending past the sides of the SiGe fin. Epitaxial silicon is
grown on the sides of the SiGe fin. During the growth, the nitride
overhang functions to contain the silicon growth which has the
affect of reducing or eliminating the occurrence of facets in the
silicon growth. The reduction or elimination of facets provides for
more control of the silicon width. The SiGe fin is removed leaving
two silicon fins that are then used in transistor formation. This
is better understood by reference to the drawings in the following
description.
Shown in FIG. 1 is semiconductor device 10 comprising a substrate
12, an insulating layer 14, a silicon germanium (SiGe) fin 16 over
insulating layer 14, and a capping layer 18 over SiGe fin 16.
Substrate 12 and insulating layer 14 and SiGe fin 16 may be formed
from a semiconductor-on-insulator (SOI) substrate in which the
overlying semiconductor layer is SiGe. Substrate 12 can be
considered a handle wafer portion because it provides structural
support. In this case SiGe fin 16 may be about 100 nanometers (nm)
in height. Capping layer 18 and SiGe fin 16 arise from forming a
SiGe layer over insulating layer 14 and another layer, preferably
nitride in this example, over the SiGe layer. The nitride layer is
patterned and the SiGe is then patterned as well. The width of SiGe
fin 16 is preferably the smallest that can be achieved by the
lithography that is available but could be another width. SiGe fin
16 is the length that is desired for the fin transistor to be
formed in silicon using SiGe fin 16. At the end of this length, not
shown but conventional for fins, is a source/drain region that is
also elevated at the same height as SiGe fin 16. This source/drain
is also covered with the nitride.
Shown in FIG. 2 is semiconductor device 10 after trimming SiGe fin
16 which results in an overhang 20 where nitride layer 18 extends
past the sides of trimmed SiGe fin 16. Preferably the overhang is
about a fourth of the width of SiGe fin 16 of FIG. 1. Thus for an
overhang on both sides of SiGe fin 16, trimming reduces the width
in half to achieve the 25% overhang of overhang 20. Trimming is a
well known process for silicon gates. Trimming processes, such as
those used for trimming polysilicon gates, may be used with the
corresponding adjustment in chemistry to account for the trimming
being of SiGe instead of silicon. One such method is to oxidize
along the sides and remove the resulting oxide. Another is to apply
an isotropic etch.
Shown in FIG. 3 is semiconductor device 10 after epitaxially
growing a silicon fin 22 on one sidewall of SiGe fin 16 and a
silicon fin 24 on the other side of SiGe fin 16. Silicon fins 22
and 24 have a width a little less than the amount of the overhang
of overhang 20. Thus, silicon fins 22 and 24 are less than 25% of
the width of SiGe fin 16. Thus about 20% of the width of SiGe fin
16 is achievable. The result is that for every sacrificial SiGe
fin, there are two silicon fins. The width of sacrificial SiGe fin
16 is of a width to achieve the desired width and spacing of
silicon fins 22 and 24. The spacing of the SiGe fins is preferably
the minimum spacing. Thus if the SiGe fins are at the minimum
spacing or repeat distance, also commonly called minimum pitch, the
density is doubled from what the minimum pitch would normally
provide by having two silicon fins per sacrificial SiGe fin.
Shown in FIG. 4 is semiconductor device 10 after removing capping
layer 18 shown in FIG. 3. The portions of capping layer 18 over the
SiGe source/drain regions, which are not shown in the FIGS. are not
removed at this step. This has the affect of exposing SiGe fin
16.
Shown in FIG. 5 is semiconductor device 10 after removing SiGe fin
16. This leaves silicon fins 22 and 24 standing alone. There are
etch chemistries that are selective between SiGe and silicon. One
such chemistry is thermal gaseous HCl. Other selective etches
include plasma fluorine chemistries or peroxide wet etches. Capping
layer 18 over the SiGe source/drain regions may be removed after
removing SiGe fin 16.
Shown in FIG. 6 is semiconductor device 10 after forming a gate
dielectric 26 on silicon fin 22, a gate dielectric 28 on
semiconductor fin 24, and a polysilicon layer 30 on silicon fins 22
and 24. Gate dielectric 26 and gate dielectric 28 in this example
are thermal oxides which may be grown in a typical fashion for gate
dielectrics. An alternative would be to provide a high k gate
dielectric such as hafnium oxide. In such case the gate dielectric
would be deposited and would then be on the surface of insulating
layer 14. Polysilicon layer 30 would be patterned and used as a
gate. The view in FIG. 6 is unchanged by patterning polysilicon
layer 30.
Thus it is seen that fins can be made using a sacrificial SiGe fin
to grow sublithographic silicon fins. With the trimming of the SiGe
fin, there is left an overhang of an overlying capping layer. The
overhang of the overlying capping layer constrains the epitaxial
silicon growth to occur in one direction only so that facets do not
occur or at least are significantly reduced. Thus fins 22 and 24
have thicknesses that are substantially uniform and have a well
controlled width.
Shown in FIG. 7 is a semiconductor device 50 comprising a substrate
52 (handle wafer portion), an insulating layer 54 over substrate
52, and a silicon layer 56 over the insulating layer. This is
similar to a conventional SOI wafer except that silicon layer 56 is
preferably thinner than the semiconductor layer on a conventional
SOI wafer. For example, silicon layer 56 is preferably about 20 nm
or even less. This can be achieved in a conventional SOI substrate
by oxidizing the semiconductor surface of a conventional SOI
substrate and then removing the oxide. The thickness can be quite
thin because its purpose is as a seed layer. It may be thicker than
the minimum but because it will be part of the channel, it should
still be sufficiently thin to allow sufficient channel control,
especially to avoid excessive off-state leakage.
Shown in FIG. 8 is semiconductor device 50 after growing a SiGe
layer 58 on silicon layer 56. The height of SiGe layer 58 is the
desired height of the fins that will be subsequently formed, which
is about 100 nm but could be another height. This structure of
semiconductor device 50 shown in FIG. 8 may also be directly
available commercially from a vendor who may make it by this or
another process such as layer transfer.
Shown in FIG. 9 is semiconductor device 50 after forming a capping
layer 60, preferably of oxide, over SiGe layer 58 and then removing
a portion of SiGe layer 58 and capping layer 60. The removed
portion is from a region 62 for forming planar transistors and the
remaining portion of SiGe layer 58 is in a region 64 for forming
fin transistors (finFETs). Silicon layer 56 is exposed in region
62.
Shown in FIG. 10 is semiconductor device 50 after selectively
growing epitaxial silicon on silicon layer 56 to form an epitaxial
layer 66 that will function as the body for planar transistors and
then removing capping layer 60. Dotted line 68 shows the previous
surface of silicon layer 56. Line 68 is dotted because the
demarcation of silicon layer 56 would unlikely to be discernible
after performing the epitaxial growth to form epitaxial layer
66.
Shown in FIG. 11 is semiconductor device 50 after forming isolation
regions 70 and 72 in epitaxial layer 66 and forming a capping layer
74, preferably of nitride, over epitaxial layer 66, isolation
regions 70 and 72, and SiGe layer 58. Capping layer 74 is
preferably about 20-50 nm in thickness.
Shown in FIG. 12 is semiconductor device 50 after performing a
patterned etch through capping layer 74, SiGe layer 58, and silicon
layer 56. This leaves a fin of SiGe similar to that of FIG. 1 and
the dimensions may be the same. A difference is that SiGe layer 58
is over a silicon layer, silicon layer 56, whereas SiGe fin 16 is
directly on an insulating layer. In this cross section of FIG. 12,
only the fin portion of SiGe layer 58 is shown, but source/drain
portions at the ends of the fin are present and covered by nitride
layer 74.
Shown in FIG. 13 is semiconductor device 50 after trimming SiGe
layer 58 and silicon layer 56. The trimming is the same as for the
trimming shown in FIG. 2 except that both SiGe and silicon are
being trimmed so if an isotropic etch is used, it preferably is not
selective, or at least not significantly so, between silicon and
SiGe. Capping layer 74 thus overhangs past the sides of trimmed
SiGe layer and silicon layer 56 by an overhang 76. The trimming is
symmetrical so capping layer 74 overhangs on both sides. The trim
also etches the side of epitaxial layer 66.
Shown in FIG. 14 is semiconductor device 50 after silicon fins 78
and 80 are selectively epitaxially grown on the sides of SiGe layer
58 and silicon layer 56, and silicon fill 82 is simultaneously
grown on the side of epitaxial layer 66. These silicon fins 78 and
80 are formed the same as described for silicon fins 22 and 24 of
FIG. 3 except for the growth from silicon layer 56. Thus, silicon
fins 78 and 80 are formed at about 20% of the width of the SiGe
layer 58 of FIG. 12. As described relative to FIG. 3, the result is
that for every sacrificial SiGe fin, there are two silicon fins.
The width of 58 sacrificial SiGe layer is of a width to achieve the
desired width and spacing for silicon fins 78 and 80. The spacing
of the SiGe fins is preferably the minimum spacing. Thus if the
SiGe fins are at the minimum spacing, also commonly called minimum
pitch, the density is doubled from what the minimum pitch would
normally provide by having two silicon fins per sacrificial SiGe
fin. The lines between silicon layer 56 and silicon fins 78 and 80
are unlikely to be visible due to they are the same material and
silicon fins 78 and 80 are epitaxially grown.
Shown in FIG. 15 is semiconductor device 50 after removing capping
layer 74 over the fin portion of SiGe layer 58, which is in region
64. The portions of capping layer 74 over region 62 and over the
source/drain regions (not shown) are not removed at this time.
Shown in FIG. 16 is semiconductor device 50 after removing the fin
portion of SiGe layer 58. The source/drain regions are not removed
because they are still capped by capping layer 74. The resulting
structure has fins 78 and 80 with silicon layer 56 between them.
The removing of SiGe is selective to silicon. An etch chemistry
that is effective for this purpose is thermal gaseous HCl. Other
selective etches include plasma fluorine chemistries or peroxide
wet etches. Capping layer 74 over region 62 and over the
source/drains is removed after the SiGe fin portion is removed.
Shown in FIG. 17 is semiconductor device 50 after forming a gate
dielectric 84 on epitaxial layer 66, a gate dielectric layer 85 on
the side of silicon fill 82, a gate dielectric layer 86 on silicon
fins 78 and 80 and silicon layer 56, and a polysilicon layer 88
after forming gate dielectrics 84 and 86. As shown gate dielectrics
84 and 86 are preferably thermally grown oxide. An alternative
would be to use another type of gate dielectric such as a high k
dielectric such as hafnium oxide. In such case the gate dielectric
would be deposited over all of the surfaces shown in FIG. 17 before
the formation of polysilicon layer 88. Polysilicon layer 88 could
be replaced by another gate electrode material other than
polysilicon or in addition to polysilicon.
Shown in FIG. 18 is semiconductor device 50 after patterning
polysilicon layer 88 and forming a transistor 96 in region 62 and a
transistor 98 in region 64. Transistor 96 is a planar transistor
having a portion of polysilicon layer 88 as the gate, source/drains
92 and 94 in epitaxial layer 66, and sidewall spacer 90 around the
gate.
Thus it is seen that there is an integration on the same substrate
of an integrated circuit of a planar transistor and a finFET. This
shows that this integration may be achieved while using the
overhang to achieve the reduced faceting while achieving
sublithographic pitch by having two silicon fins per sacrificial
fin with the sacrificial fins being at the minimum pitch. Also the
height of the planar transistor above insulating layer 54 is
substantially the same as the height of the finFET. This is
beneficial for subsequent processing.
Shown in FIG. 19 is a semiconductor device 100 comprising a
substrate 102, an insulating layer 104, a silicon layer 106 that
has been patterned, and a capping layer 108. Silicon layer 106 has
a region 110 for planar transistors and a region 112 for forming
finFETs. Silicon layer 106 has a height in region 110 that is about
the same as the desired fin height and a height that is sufficient
to function as a seed for SiGe epitaxial growth in region 112. This
reduced height for silicon layer 106 in region 112 is achieved by a
timed etch.
Shown in FIG. 20 is semiconductor device 100 after epitaxially
growing a SiGe layer 114 over silicon layer 106 in region 112 while
capping layer 108 is present and then removing capping layer 108.
This achieves the structure of FIG. 10. The process continues as
described for FIGS. 11-18. This shows there are multiple techniques
available to achieve the structure of FIG. 10.
Although the invention is described herein with reference to
specific embodiments, various modifications and changes can be made
without departing from the scope of the present invention as set
forth in the claims below. For example, different materials may be
used than those described. For example, the sacrificial fin may be
a different material than SiGe and the fins to be left remaining
may be a different material than silicon. Accordingly, the
specification and figures are to be regarded in an illustrative
rather than a restrictive sense, and all such modifications are
intended to be included within the scope of the present invention.
Any benefits, advantages, or solutions to problems that are
described herein with regard to specific embodiments are not
intended to be construed as a critical, required, or essential
feature or element of any or all the claims.
Furthermore, the terms "a" or "an," as used herein, are defined as
one or more than one. Also, the use of introductory phrases such as
"at least one" and "one or more" in the claims should not be
construed to imply that the introduction of another claim element
by the indefinite articles "a" or "an" limits any particular claim
containing such introduced claim element to inventions containing
only one such element, even when the same claim includes the
introductory phrases "one or more" or "at least one" and indefinite
articles such as "a" or "an." The same holds true for the use of
definite articles.
Unless stated otherwise, terms such as "first" and "second" are
used to arbitrarily distinguish between the elements such terms
describe. Thus, these terms are not necessarily intended to
indicate temporal or other prioritization of such elements.
* * * * *