U.S. patent number 7,502,261 [Application Number 11/379,004] was granted by the patent office on 2009-03-10 for flash memory cell arrays having dual control gates per memory cell charge storage element.
This patent grant is currently assigned to Sandisk Corporation. Invention is credited to Eliyahou Harari.
United States Patent |
7,502,261 |
Harari |
March 10, 2009 |
Flash memory cell arrays having dual control gates per memory cell
charge storage element
Abstract
A flash NAND type EEPROM system with individual ones of an array
of charge storage elements, such as floating gates, being
capacitively coupled with at least two control gate lines. The
control gate lines are preferably positioned between floating gates
to be coupled with sidewalls of floating gates. The memory cell
coupling ratio is desirably increased, as a result. Both control
gate lines on opposite sides of a selected row of floating gates
are usually raised to the same voltage while the second control
gate lines coupled to unselected rows of floating gates immediately
adjacent and on opposite sides of the selected row are kept low.
The control gate lines can also be capacitively coupled with the
substrate in order to selectively raise its voltage in the region
of selected floating gates. The length of the floating gates and
the thicknesses of the control gate lines can be made less than the
minimum resolution element of the process by forming an etch mask
of spacers.
Inventors: |
Harari; Eliyahou (Saratoga,
CA) |
Assignee: |
Sandisk Corporation (Milpitas,
CA)
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Family
ID: |
32107440 |
Appl.
No.: |
11/379,004 |
Filed: |
April 17, 2006 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20060176736 A1 |
Aug 10, 2006 |
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Related U.S. Patent Documents
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Application
Number |
Filing Date |
Patent Number |
Issue Date |
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10791486 |
Mar 1, 2004 |
7075823 |
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10282747 |
Oct 28, 2002 |
6888755 |
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Current U.S.
Class: |
365/185.17;
365/185.28; 365/185.11; 365/63; 365/185.05 |
Current CPC
Class: |
H01L
27/11524 (20130101); G11C 16/0483 (20130101); H01L
29/66825 (20130101); H01L 29/42348 (20130101); H01L
27/11521 (20130101); H01L 29/7881 (20130101); H01L
29/40114 (20190801); H01L 27/115 (20130101) |
Current International
Class: |
G11C
11/34 (20060101) |
Field of
Search: |
;365/185.17,185.05,185.11,63,185.26 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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0373698 |
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Dec 1989 |
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EP |
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1265289 |
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Dec 2002 |
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EP |
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1289023 |
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Mar 2003 |
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EP |
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360117783 |
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Jun 1985 |
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JP |
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06037328 |
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Feb 1994 |
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JP |
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H10-144807 |
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May 1998 |
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JP |
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20001083192 |
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Jun 2000 |
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JP |
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20010110917 |
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Apr 2001 |
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JP |
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Other References
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2000 Symposium on VLSI Technology Digest of Technical Papers, pp.
122-123. cited by other .
"Notification of Transmittal of the International Search Report or
the Declaration", corresponding PCT application No. PCT/US03/32383,
International Searching Authority, European Patent Office, Mar. 24,
2004, 9 pages. cited by other .
Suh et al., "A 3.3V 32Mb NAND Flash Memory With Incremental Step
Pulse Programming Scheme," IEEE International Solid-State Circuits
Conference, Digest ofTechnical Papers, Feb. 1995, pp. 94-95,
305-306, 128-129 and 350. cited by other .
Chan et al., "A True Single-Transistor Oxide-Nitride-Oxide EEPROM
Device", IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar.
1987, pp. 93-95. cited by other .
Nozaki et al., "A 1-Mb EEPROM With MONOS Memory Cell for
Semiconductor Disk Application", IEEE Journal of Solid-State
Circuits, vol. 26, No. 4, Apr. 1991, pp. 497-501. cited by other
.
Choi et al., "A Novel Booster Plate Technology in High Density NAND
Flash Memories for Voltage Scaling-Down and Zero Program
Disturbance", IEEE Symposium on VLSI Technology Digest of Technical
Papers, 1996, pp. 238-239. cited by other .
Kim et al., "Fast Parallel Programming of Multi-Level NAND Flash
Memory Cells Using the Booster-Line Technology", Symposium on VLSI
Technology Digest of Technical Papers, 1997, pp. 65-66. cited by
other .
Choi et al, "A Triple Polysilicon Stacked Flash Memory Cell With
Wordline Self-Boosting Programming", IEEE, 1997, pp. 283-286. cited
by other .
Satoh et al., "A Novel Channel Boost Capacitance (CBC) Cell
Technology with Low Program Disturbance Suitable for Fast
Programming 4Gbit NAND Flash Memories", IEEE Symposium on VLSI
Technology Digest of Technical Papers, 1998, pp. 108-109. cited by
other .
Hsu, Cheng-Yuan et al., "Split-Gate NAND Flash Memory at 120nm
Technology Node Featuring Fast Programming and Erase," IEEE 2004
Symposium on VLSI Technology Digest of Technical Papers, Jul. 2004,
pp. 78-79. cited by other .
Wolf, PhD., Stanley, "Silicon Processing for the VLSI Era, vol.
4-Deep-Submicron Process Technology," Lattice Press, 2002, pp.
1-806. cited by other .
EPO, "Office Action," corresponding European Patent Application No.
03770742.9, dated Jun. 11, 2007, 6 pages. cited by other .
USPTO, "Notice of Allowance and Fee(s) Due," mailed in related U.S.
Appl. No. 11/379,012 on Aug. 10, 2007, 14 pages. cited by other
.
USPTO, "Office Action,"for U.S. Appl. No. 11/379,019 mailed Apr.
30, 2008, 16 pages. cited by other .
The China State Intellectual Property Office, "Office Action,"
corresponding Chinese Patent Application No. 200380104733.X, mailed
on Oct. 10, 2008, 3 pages. (translation only). cited by other .
USPTO, "Notice of Allowance and Fee(s) Due," mailed in related U.S.
Appl. No. 11/379,019 on Sep. 8, 2008, 12 pages. cited by other
.
Wolf, "Silicon Processing for the VLSI Era, vol. 1-Process
Technology," Second Edition, copyright 2000, pp. 666-667, p. 742.
cited by other.
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Primary Examiner: Nguyen; Viet Q
Attorney, Agent or Firm: Davis Wright Tremaine LLP
Parent Case Text
CROSS REFERENCE TO RELATED APPLICATION
This is a divisional of application Ser. No. 10/791,486, filed Mar.
1, 2004, now U.S. Pat. No. 7,075,823 which in turn is a divisional
of application Ser. No. 10/282,747, filed Oct. 28, 2002, now U.S.
Pat. No. 6,888,755, which applications are incorporated herein in
their entirety by this reference.
Claims
The invention claimed is:
1. A non-volatile memory for programming and reading data,
comprising: a plurality of charge storage elements arranged in rows
and columns across a semiconductor substrate, a plurality of
control gate lines extending across the charge storage elements in
a manner that opposing sidewalls on opposite sides of individual
charge storage elements are capacitively coupled with at least two
of the control gate lines, and a decoder and voltage supply
connected to the control gate lines to couple controlled voltages
to the charge storage elements capacitively coupled therewith
during programming data thereto and reading data therefrom.
2. The memory of claim 1, wherein the control gate lines are
additionally capacitively coupled with the substrate in areas
between charge storage elements.
3. The memory of claim 2, additionally comprising trenches formed
in the substrate between the charge storage elements in the path of
the control lines, the control gate lines extending into said
trenches with a dielectric layer between the control lines and the
substrate.
4. The memory of claim 1, wherein the memory cells are oriented in
a plurality of series connected strings of memory cells, and
wherein the control gates extend across multiple strings of memory
cells between the charge storage elements.
5. The memory of claim 4, additionally comprising dielectric filled
isolation trenches in the substrate between the plurality of
strings of memory cells.
6. A non-volatile memory for programming and reading data,
comprising: an array of charge storage elements positioned across a
semiconductor substrate, a plurality of control gate lines
extending across the array in a manner that opposing sidewalls of
individual charge storage elements are capactively coupled with at
least two of the control gate lines, and a decoder and voltage
supply connected to the control gate lines to couple controlled
voltages to the charge storage elements capactively coupled
therewith during programming data thereto and reading data
therefrom, wherein the memory cells are oriented in a plurality of
series connected strings of memory cells, and wherein the control
gates extend across multiple strings of memory cells between the
charge storage elements, and wherein the control gates include a
combination of doped polysilicon as a bottom portion of a height of
the control gates and a metal or silicide material in contact
therewith as a top portion of the height of the control gates.
7. A non-volatile memory for programming and reading data,
comprising: a plurality of charge storage elements positioned
across a semiconductor substrate with rows of the charge storage
elements extending in a first direction and columns of charge
storage elements extending in a second direction, the first and
second directions being perpendicular with each other, a plurality
of control gate lines extending across the plurality of charge
storage elements in the first direction and being spaced apart in
the second direction between adjacent rows of charge storage
elements in a manner that opposing sidewalls on opposite sides of
individual charge storage elements of the rows are capacitively
coupled with at least two control gate lines on opposite sides of
the charge storage elements, and a decoder and voltage supply
connected to the control gate lines to couple controlled voltages
to the charge storage elements capacitively coupled therewith
during programming data thereto and reading data therefrom.
8. The memory of claim 7, wherein the control gate lines are
additionally capacitively coupled with the substrate in regions
thereof between the charge storage elements in the second
direction, and the decoder and voltage supply additionally provides
voltages to the control gate lines for controlling a level of
conduction in the substrate regions between the charge storage
elements in the second direction.
9. The memory of claim 7, wherein the decoder and voltage supply
provides different voltages to various of the control gate lines at
one time.
10. The memory of claim 7, wherein ends of the columns are
controllably connected with voltage supply levels.
11. The memory of claim 8, wherein ends of the columns are
controllably connected with voltage supply levels.
12. The memory of claim 1, wherein the charge storage elements are
conductive floating gates.
13. The memory of claim 7, wherein the charge storage elements are
conductive floating gates.
Description
FIELD OF THE INVENTION
This invention relates generally to non-volatile semiconductor
memories of the flash EEPROM (Electrically Erasable and
Programmable Read Only Memory) type, particularly to structures and
methods of operating NAND types of memory cell arrays.
BACKGROUND OF THE INVENTION
There are many commercially successful non-volatile memory products
being used today, particularly in the form of small form factor
cards, which use an array of flash EEPROM cells.
One popular flash EEPROM architecture utilizes a NAND array,
wherein a large number of strings of memory cells are connected
through one or more select transistors between individual bit lines
and a reference potential. A portion of such an array is shown in
plan view in FIG. 2A. BL0-BL4 represent diffused bit line
connections to global vertical metal bit lines (not shown).
Although four floating gate memory cells are shown in each string,
the individual strings typically include 16, 32 or more memory cell
charge storage elements, such as floating gates, in a column.
Control gate (word) lines labeled WL0-WL3 and string selection
lines DSL and SSL extend across multiple strings over rows of
floating gates, often in polysilicon (labeled P2 in FIG. 2B, a
cross-section along line A-A of FIG. 2A). The control gate lines
are typically formed over the floating gates as a self-aligned
stack, and are capacitively coupled with each other through an
intermediate dielectric layer 19, as shown in FIG. 2B. The top and
bottom of the string connect to the bit line and a common source
line respectively, commonly through a transistor using the floating
gate material (P1) as its active gate electrically driven from the
periphery. This capacitive coupling between the floating gate and
the control gate allows the voltage of the floating gate to be
raised by increasing the voltage on the control gate coupled
thereto. An individual cell within a column is read and verified
during programming by causing the remaining cells in the string to
be turned on hard by placing a relatively high voltage on their
respective word lines and by placing a relatively lower voltage on
the one selected word line so that the current flowing through each
string is primarily dependent only upon the level of charge stored
in the addressed cell below the selected word line. That current
typically is sensed for a large number of strings in parrallel,
thereby to read charge level states along a row of floating gates
in parallel. Examples of NAND memory cell array architectures and
their operation as part of a memory system are found in U.S. Pat.
Nos. 5,570,315, 5,774,397 and 6,046,935.
The charge storage elements of current flash EEPROM arrays are most
commonly electrically conductive floating gates, typically formed
from doped polysilicon material. Another type of memory cell useful
in flash EEPROM systems utilizes a non-conductive dielectric
material in place of a conductive floating gate to store charge in
a non-volatile manner. Such a cell is described in an article by
Chan et al., "A True Single-Transistor Oxide-Nitride-Oxide EEPROM
Device," IEEE Electron Device Letters, Vol. EDL-8, No. 3, March
1987, pp. 93-95. A triple layer dielectric formed of silicon oxide,
silicon nitride and silicon oxide ("ONO") is sandwiched between a
conductive control gate and a surface of a semi-conductive
substrate above the memory cell channel. The cell is programmed by
injecting electrons from the cell channel into the nitride, where
they are trapped and stored in a limited region. This stored charge
then changes the threshold voltage of a portion of the channel of
the cell in a manner that is detectable. The cell is erased by
injecting hot holes into the nitride. See also Nozaki et al., "A
1-Mb EEPROM with MONOS Memory Cell for Semiconductor Disk
Application," IEEE Journal of Solid-State Circuits, Vol. 26, No. 4,
April 1991, pp. 497-501, which describes a similar cell in a
split-gate configuration where a doped polysilicon gate extends
over a portion of the memory cell channel to form a separate select
transistor.
Memory cells of a typical non-volatile flash array are divided into
discrete blocks of cells that are erased together. That is, the
block contains the minimum number of cells that are separately
erasable together as an erase unit, although more than one block
may be erased in a single erasing operation. Each block typically
stores one or more pages of data, a page defined as the minimum
number of cells that are simultaneously subjected to a data
programming and read operation as the basic unit of programming and
reading, although more than one page may be programmed or read in a
single operation. Each page typically stores one or more sectors of
data, the size of the sector being defined by the host system. An
example is a sector of 512 bytes of user data, following a standard
established with magnetic disk drives, plus some number of bytes of
overhead information about the user data and/or the block in which
it is stored.
As in most all integrated circuit applications, the pressure to
shrink the silicon substrate area required to implement some
integrated circuit function also exists with flash EEPROM arrays.
It is continually desired to increase the amount of digital data
that can be stored in a given area of a silicon substrate, in order
to increase the storage capacity of a given size memory card and
other types of packages, or to both increase capacity and decrease
size. Another way to increase the storage density of data is to
store more than one bit of data per memory cell charge storage
element. This is accomplished by dividing a window of a storage
element charge level voltage range into more than two states. The
use of four such states allows each cell to store two bits of data,
eight states stores three bits of data per cell, and so on. A
multiple state flash EEPROM structure and operation is described in
U.S. Pat. Nos. 5,043,940 and 5,172,338.
The patents and articles identified above are all hereby expressly
incorporated in their entirety into this Background by these
references.
SUMMARY OF THE INVENTION
A significant limitation on the continued shrinking of the size of
current non-volatile memory cell arrays is the floating gate
dielectric. This cannot practically be made thinner than the
approximately 70 Angstrom (7 nm) minimum thickness currently being
used without resulting in leakage and difficulties in long term
data retention. This means that the voltages required to be coupled
to the floating gates to control conduction in the memory cell
channels below them cannot be reduced as the size of the various
gates and distances between them are reduced. Undesired coupling of
voltages between the various gates increases as the distance
between them decreases unless a compensating reduction in the
voltage levels being used can be made. It is important that such a
reduction be made if future scaling of memory arrays is to be
made.
A reduction in the level of the control gate voltages is made
possible if the coupling ratio of the floating gate can be
increased. The coupling ratio is equal to the capacitance between
the floating and control gates, divided by the capacitance between
the floating gate and all adjacent electrodes, most specifically
the substrate, as is well known. The values of these capacitances
depend upon the size of the opposing surface areas that are
coupled, and the thickness and dielectric constants of the
dielectric layers between them. Reduction of the coupling ratio is
difficult to achieve in NAND arrays because of their stacked
control and floating gate structures. When the coupling area of the
floating gate with the substrate is made smaller as part of a
shrink, which as a denominator could result in an increase in the
coupling ratio, the coupling area between the floating gate and the
control gate is similarly reduced, which causes the numerator to
decrease as well.
Another undesired effect of scaling is an increase in parasitic
capacitances between conductive array elements, particularly
between adjacent floating gates. Errors in programming or in
reading the state of one floating gate can, for example, be caused
by the close proximity of the charge stored on the floating gate of
an adjacent cell. This coupling can create a significant number of
errors in multi-state operation where the allowed range of
threshold voltages of the floating gate transistor that is devoted
to each state is very small.
According to one primary aspect of the present invention, the
memory cell array floating gates are individually coupled with at
least two control gates, thereby to increase the total coupling
area between floating and control gates without increasing the
coupling area between the floating gate and the substrate, thus
increasing the coupling ratio. In a NAND array, the control gates
usually stacked on top of rows of floating gates are replaced by
control gates positioned between the floating gates along the
memory cell strings. The individual floating gates are then
capacitively coupled through opposing sidewalls to two control
gates, one on each side. The height of the floating gates is
increased to increase the coupling area with these control gates.
The total coupling area of an individual floating gate with the
control gates is significantly increased independent of the
coupling area between the floating gate and the substrate. This
allows the control gate voltages to be significantly reduced but
still results in increasing the voltage coupled to the floating
gates to the values now used to control the memory cell channel
through the gate dielectric having a given thickness.
In operation, the voltage of one row of floating gates is increased
during their programming or reading by raising the voltage on the
control gates on both sides of the row. A similar voltage rise of
floating gates in adjacent rows is reduced, even though they are
also coupled with one of these control gates whose voltage has been
increased, by keeping the voltage low on control gates coupled with
opposite sides of these adjacent rows of floating gates.
The positioning of control gates between floating gates along NAND
memory cell strings also reduces the undesirable coupling between
floating gates of adjacent cells because the electrically driven
control gates tend to shield the electric field between the
floating gates. Further, the control gates can be capacitively
coupled to areas of the substrate between floating gates in order
to boost the voltage of the substrate for certain operations such
as inhibiting the programming of individual cells.
According to another primary aspect of the present invention,
channel lengths of the individual transistors in the NAND strings
having a given number of floating gate storage elements are
significantly reduced, up to almost one-half existing lengths, by
forming the floating gates using spacers having a dimension
significantly less that the minimum resolution element size of the
lithography being used in the process. Such spacers are formed over
a layer of doped polysilicon or other conductive material, for
example, of a first dielectric material along sides of strips of a
second dielectric material. Once the second dielectric material is
removed, the spacers of the first dielectric material form a mask
through which the underlying conductive floating gate material is
etched. The size of the floating gates and the spaces between them
are reduced. The control gates are preferably provided between the
smaller floating gates and operated in the same manner as described
above. Smaller NAND memory cell strings result in more of them
being formed in a given area, and a resulting increase in the
density of data storage in a given size of memory cell array.
Additional aspects, advantages and features of the present
invention are included in the following description of exemplary
examples thereof, which description should be taken in conjunction
with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a block diagram of a type of memory system in which the
memory cell array and operational improvements of the present
invention may be implemented;
FIG. 2A is a plan view of a prior art NAND array;
FIG. 2B is a cross-sectional view of the prior art NAND array of
FIG. 2A taken along the line A-A;
FIG. 3 is a plan view of an example memory cell array in a NAND
configuration;
FIG. 4 is a cross-sectional view of the array of FIG. 3, taken at
section A-A thereof;
FIG. 5A is a cross-sectional view of the array of FIG. 3, taken at
section B-B thereof;
FIG. 5B is a cross-sectional view of the array of FIG. 3, taken at
section C-C thereof,
FIG. 6 is a cross-sectional view of a modified version of the array
of FIGS. 3-5, taken at section B-B, at a corresponding process
stage to FIG. 5A of the first embodiment.
FIGS. 7-10 are cross-section views of sequentially formed
structures of a second embodiment of the array of FIGS. 3-5, taken
at section A-A of FIG. 3;
FIG. 11 is an enlarged cross-sectional view of a memory cell of
either of the embodiments of FIGS. 3-5 or 7-10, to illustrate an
advantage thereof;
FIG. 12 is a cross-sectional view of an alternate memory cell
construction that may be implemented in either of the embodiments
of FIGS. 3-5 or 7-10;
FIG. 13 illustrates the capacitive coupling between gate elements
and the substrate of either of the embodiments of FIGS. 3-5 or
7-10;
FIG. 14 is an equivalent circuit diagram of a memory cell array
according to either of the embodiments of FIGS. 3-5 or 7-10;
FIG. 15 is a table of example memory cell array operating
conditions that reference the circuit diagram of FIG. 14; and
FIG. 16 is a circuit diagram of one NAND string used for
illustration of methods of reading the NAND memory.
DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS
Memory System
An example memory system in which the various aspects of the
present invention may be implemented is illustrated by the block
diagram of FIG. 1. A memory cell array 1 including a plurality of
memory cells M arranged in a matrix is controlled by a column
control circuit 2, a row control circuit 3, a c-source control
circuit 4 and a c-p-well control circuit 5. The memory cell array 1
is, in this example, of the NAND type that is described above in
the Background and in references incorporated herein by reference.
A control circuit 2 is connected to bit lines (BL) of the memory
cell array 1 for reading data stored in the memory cells (M), for
determining a state of the memory cells (M) during a program
operation, and for controlling potential levels of the bit lines
(BL) to promote the programming or to inhibit the programming. The
row control circuit 3 is connected to word lines (WL) to select one
of the word lines (WL), to apply read voltages, to apply program
voltages combined with the bit line potential levels controlled by
the column control circuit 2, and to apply an erase voltage coupled
with a voltage of a p-type region on which the memory cells (M) are
formed. The c-source control circuit 4 controls a common source
line (labeled as "c-source" in FIG. 1) connected to the memory
cells (M). The c-p-well control circuit 5 controls the c-p-well
voltage.
The data stored in the memory cells (M) are read out by the column
control circuit 2 and are output to external I/O lines via an I/O
line and a data input/output buffer 6. Program data to be stored in
the memory cells are input to the data input/output buffer 6 via
the external I/O lines, and transferred to the column control
circuit 2. The external I/O lines are connected to a controller 9.
The controller 9 includes various types of registers and other
memory including a volatile random-access-memory (RAM) 10.
Command data for controlling the flash memory device are inputted
to command circuits 7 connected to external control lines that are
connected with the controller 9. The command data informs the flash
memory of what operation is requested. The input command is
transferred to a state machine 8 that controls the column control
circuit 2, the row control circuit 3, the c-source control circuit
4, the c-p-well control circuit 5 and the data input/output buffer
6. The state machine 8 can output a status data of the flash memory
such as READY/BUSY or PASS/FAIL.
The controller 9 is connected or connectable with a host system
such as a personal computer, a digital camera, or a personal
digital assistant. It is the host that initiates commands, such as
to store or read data to or from the memory array 1, and provides
or receives such data, respectively. The controller converts such
commands into command signals that can be interpreted and executed
by the command circuits 7. The controller also typically contains
buffer memory for the user data being written to or read from the
memory array. A typical memory system includes one integrated
circuit chip 11 that includes the controller 9, and one or more
integrated circuit chips 12 that each contain a memory array and
associated control, input/output and state machine circuits. The
trend, of course, is to integrate the memory array and controller
circuits of a system together on one or more integrated circuit
chips.
The memory system of FIG. 1 may be embedded as part of the host
system, or may be included in a memory card that is removably
insertible into a mating socket of a host system. Such a card may
include the entire memory system, or the controller and memory
array, with associated peripheral circuits, may be provided in
separate cards. Several card implementations are described, for
example, in U.S. Pat. No. 5,887,145, which patent is expressly
incorporated herein in its entirety by this reference.
First NAND Array Embodiment
Major components of a few memory cells of a NAND array are
illustrated in plan view in FIG. 3, with an equivalent circuit
thereof shown in FIG. 14 where corresponding elements are indicated
by the same reference number as in FIG. 3 but with a prime (')
added. Five strings 21-25 of series connected memory cells are
included, with three floating gate charge storage elements shown in
each string. The string 21 includes floating gates 27, 28 and 29,
the string 22 has floating gates 30, 31 and 32, the string 23
includes floating gates 33, 34 and 35, the string 24 has floating
gates 36, 37 and 38, and the string 25 includes floating gates 39,
40 and 41. Only a small rectangular array of fifteen memory cells
is illustrated for ease of explanation. Actual implementations of
such an array include millions of such memory cells in thousands of
NAND strings, each string normally having 16, 32 or more memory
cells. It is understood that the memory array is typically
positioned over one or more well regions contained within a common
substrate in order to allow the local substrate potential of the
memory array to be electrically controlled independent of the
common substrate potential. The use of the term "substrate" with
respect to a memory array of transistors throughout this
description will include reference to such well regions unless
specifically noted.
Each of the NAND strings 21-25 includes two select transistors, one
at each end of the string, to controllably connect the string
between a different one of global bit lines BL0-BL4 (FIG. 14) and a
reference potential V.sub.S. V.sub.S is normally ground during read
but may assume a small positive value during programming to assist
in minimizing leakage across the source select transistor. Voltage
V.sub.SSL is applied to respective gates 43-47 of select
transistors T.sub.0S-T.sub.4S control connection of one end of
their respective memory cell strings 21-25 to V.sub.S. The other
ends of the strings 21-25 are connected through respective select
transistors T.sub.0D-T.sub.4D (FIG. 14) to the respective bit lines
BL0-BL4 by voltage V.sub.DSL applied to select transistor gates
49-53. The column control circuits 2 (FIG. 1) apply a voltage to
each bit line that is representative of the specific data to be
written, or sense the voltage or current during a read operation.
The select transistors T.sub.0S-T.sub.4S and T.sub.0D-T.sub.4D
(FIG. 14) include respective source and drain regions 55-64 and
65-74 (FIG. 3) in a semiconductor substrate 77 at its surface 79
(FIGS. 4, 5A and 5B).
A typical prior art NAND array includes control gate (word) lines
extending across multiple strings over rows of floating gates with
a suitable insulating dielectric layer therebetween. Close coupling
between the control and floating gates is desirable, as discussed
above, in order to minimize the control gate voltages that are
required to raise the coupled floating gates to the voltage levels
necessary for programming and reading their states. One control
gate (word) line is used for each row of floating gates. In order
to make an array with the floating and control gates self-aligned
in a y-direction (along the lengths of the NAND strings), the
control gates are typically used as masks to form the floating
gates, which then have the same dimensions in the y-direction as
the control gates. There are limited opportunities with this
architecture to increase the area of coupling between the control
and floating gates in order to increase the coupling ratio
discussed above in order to enable operation with lower control
gate voltages appropriate to future scaled technologies.
Therefore, in the NAND array shown in FIGS. 3-5, control gate
(word) lines 81-84 are positioned between the floating gates
instead of on top of them. Each of the control gate lines extends
across multiple strings of memory cells and is capacitively coupled
through a suitable insulating dielectric, such as multi-layer
oxide-nitride-oxide (ONO), to the floating gates on both sides.
Additional coupling area is obtained by using the sidewall areas of
both sides of the floating gates. The floating gates can be made
thicker (higher) than usual in order to increase this coupling
area, and the control gates in between them are then made to be at
least as thick as the floating gates in order to take advantage of
the added coupling area. An advantage is that this coupling area
may be controlled largely independently of the coupling area of the
floating gates and the substrate, resulting in a desirably high
coupling ratio even as the coupling area of the floating gates with
the substrate is reduced during future shrinks.
Two of these control gate lines replace a single word line of
conventional prior art NAND arrays. For example, the word line that
would extend across the row of floating gates 27, 30, 33, 36 and 39
in a conventional array is replaced by two control gate lines 81
and 82 (WL0 and WL1). Similarly, a word line that would normally
extend across the row of floating gates 28, 31, 34, 37 and 40 is
replaced by two control gate lines 82 and 83 (WL1 and WL2). The
control lines 81-84 are elongated in the x-direction across the
array and separated in the y-direction by the length of the
intervening floating gates and the thicknesses of the dielectric
layers between them. Although the size of the memory floating gate
is typically made as small as the photolithography allows in both x
and y dimensions, the channel length of the select transistors
43-47 and 49-53 (y-dimension) is typically slightly larger than the
minimum feature size to ensure it can effectively block all
conduction including leakage when the maximum voltage is applied
across it.
A method of forming the array of FIG. 3, and additional features of
the array, can be explained by reference primarily to the
orthogonal cross-section views of FIG. 4 (line A-A in the
y-direction of FIG. 3 through one string of memory cells), FIG. 5A
(line B-B in the x-direction of FIG. 3 along a row of memory cells
extending across multiple strings), and FIG. 5B (line C-C in the
x-direction of FIG. 3 along a word line). After doping of the
substrate 77, typically including formation of one or more wells, a
layer 91 of tunnel silicon oxide (SiO.sub.2) is grown on the
surface 79 of the substrate 77 to a thickness of about 8 nm. A
first layer of doped polysilicon is then formed over at least the
area of the array, typically by low-pressure chemical vapor
deposition (LPCVD), to a thickness of from 50 to 200 nm. from which
the floating gates are later formed. This is thicker than the usual
first polysilicon layer in prior art NAND devices, with the result
that the later formed floating gates are thicker than previously. A
thin pad 93 of silicon dioxide is then formed over the top of the
polysilicon layer, followed by depositing a layer 95 of silicon
nitride (Si.sub.3N.sub.4) of thickness typically between 100 and
300 nm. A mask is then formed on the top of the nitride layer for
etching the exposed Nitride, oxide pad, polysilicon and tunnel
oxide to leave stacked strips elongated across the substrate in the
y-direction and separated in the x-direction by the smallest
spacing dimension resolvable by the mask formation process. The
width of these strips is also preferably made equal to their
spacing. The etch is anisotropic and exposes the surface 79 of the
substrate 77 between these strips.
A next series of steps provides electrical isolation between
resulting columns of floating gates by Shallow Trench Isolation
(STI). The exposed substrate surface is then anisotropically etched
to form trenches 97-100 (FIG. 5A) elongated in the y-direction and
positioned between the polysilicon/dielectric stack strips in the
x-direction. These trenches are preferably etched to a depth of
100-300 nm. The exposed silicon surface region may be implanted
with a light Boron dose to locally increase the field oxide
threshold voltage if needed. A thick oxide layer is then deposited
over the entire array area to completely fill these trenches and
the spaces between the polysilicon/dielectric stacked strips.
Excess oxide above the stacked strips is then removed by Chemical
Mechanical Polishing (CMP), down to the nitride layer 95 used as a
stop. A relatively flat surface then exists across the tops of the
nitride strips 95 and thick oxide (regions 97-100 in FIG. 5A). As
is well known in the art, high temperature annealing may be
employed to relieve the mechanical stress in the silicon isolation
trenches as well as to densify the thick oxide in these trenches.
It is also possible to form the array without employing shallow
trench isolation, for example by forming thick dielectric isolation
above the silicon surface rather than in trenches etched into
it.
In a next step, a mask is formed with strips extending in the
x-direction, perpendicular to the polysilicon/dielectric strips
just formed, between which the polysilicon/dielectric strips are
removed down to the tunnel dielectric layer 91 by an anisotropic
etch. The sum of the width of the strips of the mask and the spaces
between them are made to be as small as possible, the pitch of the
process. The actual mask may be photoresist over another deposited
layer of nitride or oxide that is masked and etched to form the
masking strips in the x-direction, followed by etching the thus
exposed underlying first polysilicon layer and a portion of the
exposed field oxide regions. This separates the remaining strips of
the first polysilicon layer into the individual floating gates. The
etch process first removes approximately 100-200 nm of exposed
field oxide and then the chemistry is changed to selectively remove
the entire exposed first polysilicon layer while stopping on the
underlying tunnel oxide. In addition to forming the floating gates,
the first polysilicon layer can also be used to form the select
transistor gates 45 and 51 as shown.
After this etch, trenches are formed alongside the first
polysilicon strips with lengths in the x-direction. Over the active
regions these trenches will extend the full height of the floating
gate plus the thickness of masking layers 93 and 95, and over the
field regions they will extend 100-200 nm as was formed during the
first polysilicon separation step described previously. It is in
these trenches that the control gate lines 81-84, select gates
lines 80 and 85, and source and bit line contacts are formed. But
before forming these control gate lines, ions are implanted in the
trenches in regions noted on areas of the plan view of FIG. 3 that
are lightly dotted. The cross-sectional view of FIG. 4 shows such
memory transistor and select gate implanted source and drain
regions 67, 72, 105, 106, 62 and 57. N+ ions may typically be
implanted with a dose within a range of 5E13-1E15. A dielectric
layer 103 is then formed over the exposed surfaces of the
structure, including conforming to the sidewalls and bottom
surfaces of the newly formed trenches. The layer 103 is preferably
ONO but may also be a material having a higher dielectric
constant.
A second layer of doped polysilicon is then deposited over the
array area, including completely filling the trenches and
contacting the dielectric layer 103. This polysilicon is then
removed from the top of the structure by CMP, down to the nitride
layer 95 (or alternately to the portion of ONO layer 103
immediately in contact with layer 95) that is used as a stop,
followed by a controlled etch of the polysilicon a small distance
into the trenches. This polysilicon is also removed using a masking
step from those regions of the periphery and array in which
contacts to source & drain regions are desired. The control
gate lines 81-84, the SSL line 80, and the DSL line 85 are the
result. These lines are made to extend at least as high as the
floating gates to which they are capacitively coupled through the
dielectric layer 103.
Since these narrow control gate lines are typically driven from one
end and extend over a significant portion of the memory array,
their series resistance is of concern. Consequently the doped
polysilicon may be replaced or supplemented with a variety of
materials to address this concern. The tops of the control gate
lines may be silicided and a thicker layer than normal may be used
in this application since they are defined by CMP rather than
chemical etching. Alternatively, another conductive material, such
as tungsten or molybdenum, may be used instead of the doped second
polysilicon. In yet another embodiment the control gates can be
formed as a hybrid of polysilicon capped by low resistivity
metallic interconnect. This can be accomplished for example when
the top exposed surfaces of the second polysilicon control gate
lines 81-84 are partially etched down, then is coated with a thin
sputtered layer of a barrier metal followed by the deposition of a
metallic layer such as tungsten or molybdenum. This composite layer
is then etched back employing CMP using the nitride masking layer
as etch stop. The resulting interconnect structure provides strips
of narrow low resistivity metallic word lines running in the
x-direction, being in electrical contact with the underlying second
polysilicon in the trenches, and isolated from adjacent similar
word lines by the masking dielectric layer 95 laying on top of the
floating gates. FIG. 5B shows a cross section through section C-C
of FIG. 3 at this stage of the process.
Next, all periphery circuits and transistors are formed, the array
of NAND strings is covered with a dielectric insulation layer (not
shown), and one or more layers of standard via/metalization
(aluminum or copper interconnects) follows to provide electrical
access to all bit lines, source lines, word lines and access
transistors. These metalization layers can be used as local or
global interconnects to reduce the resistivity of long word lines
that may become exceedingly narrow and therefore quite highly
resistive across large memory arrays.
There are several methods of interconnecting the select gates and
implementing the source and drain contacts. One such method is
illustrated in FIGS. 3-5 in which the SSL 80 and DSL 85 lines are
formed from P2 (the same material as the word lines). The select
gate transistors use P1 as their gate material, which should be
directly contacted and not left floating. One way to accomplish
this is with a direct contact between the horizontal P2 line and
each P1 gate. After a first P2 thickness is deposited, a mask is
used to selectively remove the ONO layer 103 only on the side of
the SSL select gate nearest the common source line contact and on
the side of the DSL select gate nearest the bit line contact. Then
a second P2 layer is deposited such that the combined thickness of
P2 after CMP polishing and etch-back as described earlier is as
shown in FIG. 4. This second P2 deposition makes ohmic contact with
both the first P2 deposition and the P1 gate material and allows
the P2 SSL and DSL lines to directly contact the P1 gates of the
respective select transistors. Contacts to the source select
transistor's source region which is common to many NAND strings can
be made using a horizontal metal line (M0 79 in FIG. 3), and
contacts to the drain select transistor's drain region are made to
a vertical metal line (not shown), one metal line for each column
of NAND strings. These connections are typically made at the same
time as the interconnections in the periphery region. An alternate
method (not shown) of making contact to the select gates is to use
a mask to open contact regions on top of each gate and interconnect
these regions with a horizontal poly or metal line located directly
above the select transistors gates, again typically during
formation of the periphery circuits and interconnections.
Because the control gates are formed along side the floating gates,
the structure of FIGS. 3-5 has a more planar topography than the
usual NAND array. A primary advantage of this structure is the
increased coupling area between the floating gates and the control
gates, which leads to an improved capacitive coupling ratio, which
in turn allows lower control gate voltages to be used during
operation of the memory cell array. Additionally, positioning of
the control gate lines between the floating gates in the strings
shields these floating gates from each other, thereby significantly
reducing, or even eliminating, the undesirable coupling between
adjacent floating gates in the column direction. Also, as best
shown in FIG. 4, the control gate lines 81-84 can be capacitively
coupled through the dielectric layers 91 and 103 with the ion
implanted source and drain regions in the substrate 77, and thus
employed to raise (boost) the voltage of the substrate surface 79
in these regions. The level of the ion implantation can be made
less than usual if the control gate lines are used to control the
level of conduction through the implanted regions under them, which
this structure allows.
Additionally, and perhaps most importantly, advantage may be taken
of future reductions of the process pitch to reduce the sizes of
floating gates and other elements, and the spaces between them,
even though the thickness of the floating gate oxide layer is not
reduced. If the thickness of the floating gate oxide is not reduced
then the voltage on the floating gate cannot be reduced. However,
if the coupling ratio or coupling area between the floating gate
and the control gate can be increased, the control gate voltage can
be reduced consistent with the requirements of the process shrink.
Use of dual control gates coupled to opposing sidewalls of
individual floating gates along with increased thickness of the
floating gate provides this increased coupling area.
Second NAND Array Embodiment
A modification of the memory cell array of FIGS. 3-5 is shown in
FIGS. 6-10, which are cross-sectional views along a NAND string in
the y-direction after sequential processing steps are performed.
FIGS. 4 and 10, of the first and second embodiments at comparable
stages of their formation, show that the number of memory cell
floating gates included in the same length of the NAND string is
much higher in FIG. 10 than in FIG. 4, almost twice as many. The
structures appear in the x-direction to be the same. The structure
of this second embodiment has the same features and advantages
described above for the first embodiment, plus a significantly
smaller memory cell size in the y-direction. This is accomplished
by a novel combination of undercutting and use of spacers to form
elements smaller than the smallest lithographically resolvable
element size of the process being used.
FIG. 6 shows a cross section B-B along the x-direction of the array
of FIG. 3 after a first series of processing steps to form the
vertical strips of polysilicon P1 (later to become the floating
gates) separated by the STI field oxide according to the second
embodiment. The initial steps in forming the intermediate structure
of FIG. 6 are the same as described above for the first embodiment
as shown in FIG. 5A at a comparable stage of the process. A
substrate 111 is appropriately doped to contain one or more wells
and a layer 115 of tunnel oxide is grown over a surface 113 of the
substrate. A layer of doped polysilicon is then deposited over the
oxide, an oxide pad formed on its top, a nitride layer formed over
that and the polysilicon/dielectric layers then etched into strips
extending in the y-direction. The STI trenches are then formed
between the polysilicon strips and filled with oxide. The excess
oxide is removed by CMP down to the nitride layers used as a stop.
One difference with the first embodiment is that the nitride layer
corresponding to 95 of FIG. 5A has been removed from the oxide pad
119, for example using a wet etch.
Next, a relatively thick (50-200 nm.) dielectric layer 121, such as
densified silicon dioxide, is then deposited over the oxide pad 119
as shown in FIG. 7. A photoresist mask 123 is then formed over this
dielectric layer with strips extending in the x-direction, and
having widths and spacing in the y-direction determined by the
lithographically minimum resolvable element size. The dielectric
layers 121 and 119 are then etched through this mask. The width of
the resulting strips can be made smaller than the width of the mask
strips by undercutting or over-etching sideways. Resulting
relatively thick dielectric strips 121 extending in the x-direction
across the polysilicon strips and isolation oxide between them is
narrower than the mask strips 123 through which they are formed.
The oxide pad 119 is also removed as a result of this etching step.
This etching step is controlled in order not to remove excessive
amounts of isolation oxide between the polysilicon strips (regions
97-100 in FIG. 6).
A next series of steps are illustrated by FIG. 8. After the mask
123 is removed, a thin (approximately 5 nm. thick) oxide pad 125 is
reformed on the surface of the polysilicon strips. This is followed
by depositing silicon nitride over the array, typically using an
LPCVD process, and then anisotropically etching the nitride to
leave spacers 127 along the walls on both sides of the oxide strips
121. The thickness of the deposited nitride primarily determines a
length L of the spacer, which in turn (as described later)
determines the length of the floating gates, which is significantly
less than the minimum width of the process being used to form the
structure. A width W of the undercut oxide strips and the length L
of the spacers (FIG. 8) are preferably chosen to result in
substantially equal spacing of the spacers 127 along the lengths of
the polysilicon strips 117, since (as described later) this
determines the spacing of the resulting floating gates in the
y-direction. It will also be noted that the materials for the
strips 121 and spacers 127 may be exchanged, the strips 121 being a
nitride and the spacers 127 being an oxide, as the importance of
the materials used is to allow removal by etching of the strips 121
while leaving the spacers 127 intact.
This removal and other steps are illustrated by FIGS. 8 and 9. The
gaps between the nitride spacers 127 (FIG. 8) are first filled with
oxide so that etching away the oxide strips 121 does not result in
over etching the field isolation oxide that is exposed between the
NAND strings. CMP then removes any excess oxide, down to tops of
the nitride spacers 127 used as CMP stops. This oxide between the
spacers 127 and the oxide strips 121 are then anisotropically
etched together back to the top surface of the polysilicon layer
117, which may be used as end point detection to terminate this
oxide etch. Alternatively, to protect the exposed isolation oxide
between the memory cell strings, this isolation oxide could be
masked with a material that is not etched as the oxide strips 121
are removed, and this masking material then removed after the oxide
strips 121 have been removed.
A next step is to use the remaining nitride spacers 127 as a mask
to separate the polysilicon strips, such as the strip 117, into
islands of isolated floating gates. Anisotropically etching the
polysilicon leaves floating gates 131-138. The source and drain ion
implantation then takes place, using the floating gates and
covering nitride spacers as a mask. The N+ ion implant dose can be
within a range of from 5E13 to 1E15. Implanted regions 141-147
between the floating gates are the result. It should be noted that
even though floating gate structures 131-138 may be tall and
extremely thin, they are nonetheless mechanically stable by virtue
of support from adjoining walls of the isolation oxide.
Referring to FIG. 10, a next step is the formation of a dielectric
layer 151 that conforms to the outside surface of the memory array,
as it exists in the stage illustrated in FIG. 9. The dielectric 151
is preferably made of ONO to a thickness of between 100 and 200 nm.
Next, a second layer of doped polysilicon is deposited by LPCVD
over the array to completely fill the gaps between floating gates
in contact with the dielectric layer 151. Excess polysilicon
material is then removed by CMP back to the nitride layer material
in the ONO layer 151, or, if ONO is not used, to the tops of the
nitride spacers 127 that remain as part of the structure. An
additional polysilicon etching step is desirable in order to remove
any stringers that may remain across the nitride spacers 127. The
result is separate control gate lines 153-159. In order to increase
their conductivity, they may be formed and treated using any of the
variations as described in the first embodiment. The exposed
surface of the structure is then covered by a passivation
dielectric layer, following by forming metal conductive lines and
vias to connect the lines with source and drain regions at the end
of the memory cell strings, and the control gate lines along their
lengths.
It can be observed from FIG. 10 that the structure of the second
embodiment has all the advantages described above for the first
embodiment, plus a higher density of floating gates along the NAND
strings. This added advantage results from making the length L of
the floating gates and space W between them smaller than the
minimum definable lithographic feature size.
Other Features
With reference to FIG. 11, an additional advantage in the operation
of an array according to either of the first and second embodiments
is illustrated. The typical NAND string, as it is further scaled
down, begins to suffer more severely from edge trapping of
electrons in the oxide at the side edges of the floating gate, as
indicated at 161 and 163. After extended cycling (programming and
erasing), some tunneled electrons remain trapped in thicker
portions of the oxide immediately adjoining the tunnel oxide over
the channel region. This trapped charge contributes to the
conduction state of the memory cell transistor; the more trapped
electrons, the higher the threshold voltage during read. However,
if, subsequent to programming the device is stored at a relatively
high temperature (e.g. 125.degree. C.), this oxide trapped charge
may be ejected back into the substrate. This is called
"relaxation", and can result in a threshold voltage that is
0.3v-0.7v lower than the threshold voltage immediately after
programming. This relaxation can be a significant problem,
particularly when operating at more that two storage states per
floating gate ("multi-state" or "MLC") operation. It can result in
data loss in all cells that have been previously heavily
programmed.
This relaxation effect is partially or entirely eliminated in
either of the embodiments described above by the presence of the
control gate lines (CG1 and CG2) in close proximity to the edges of
tunnel dielectric at the edges of the floating gate (FG), and the
high voltages applied to these control gates during programming.
This results in trapping of electrons outside the channel region at
trapping sites that are much deeper into the oxide insulator, and
therefore are far less susceptible to relaxation after storage at
high temperatures.
FIG. 12 illustrates a modification that may be made to either of
the embodiments described above, in a cross-sectional view taken
along a NAND memory cell string. The process flow may be modified
to introduce shallow cavities or trenches in the active silicon
between adjacent floating gate transistors in the NAND series
string. Two such trenches 165 and 167 are shown in FIG. 12. The
trenches are formed by etching into the substrate to a depth of
between 20 nm to 50 nm, and is performed after the floating gates
have been formed and the exposed tunnel dielectric between them has
been removed. Prior to deposition of the second polysilicon layer
from which the control gate lines are formed, the silicon of these
shallow trenches is implanted with phosphorus or arsenic, typically
to a dose of between 5E13 and 1E15 at a low energy, to form source
and drain regions 169 and 171.
Alternatively, a p-type doping of the memory cell channel regions
of the substrate, which typically takes place at an initial stage
of the processing, can be made sufficiently low that the silicon
surface in these trenches is inverted when the overlying control
gate is held to a slightly positive voltage (V.sub.CG>0.5V). In
this alternative embodiment of field induced inversion in the
source and drain regions between adjacent transistors in the NAND
string, the control gate voltages are set at a sufficiently
positive voltage to induce an inversion layer along the surface of
the trenches and therefore permit conductivity between adjacent
floating gate transistors along the NAND string. In this
alternative embodiment, the N.sup.+ implant into the silicon source
and drain regions along the NAND string is either at a very low
dose, perhaps between 1E13 and 5E13, or is altogether omitted. Use
of a field induced inversion layer to facilitate electronic
conduction thru the entire series NAND string outside of the
floating gate transistors can further improve the programming and
erasing cycle endurance, because even a low dose of N+ implant
(which is currently necessary but is hereby avoided) can cause
damage to the tunnel dielectric at the edges of the floating gate,
and may therefore be preferentially avoided. In either case,
whether or not the silicon in this trench is implanted N.sup.+ or
not, the boosting capacitance between the control gate lines and
the substrate is increased substantially by virtue of this very
shallow trench, even if the lateral spacing W between adjacent
floating gates is very small.
Operation of the NAND Array Embodiments
The fundamental element of the new NAND cell structure of both
embodiments described above is the formation of two, rather than
one, control gates, for each floating gate, rather than stacking
the control gate over the floating gate as is traditional. A
schematic representation of this is given in FIG. 13 to show the
coupling between the gates. Capacitive coupling C.sub.CF1 and
C.sub.CF2 exists between opposing sidewalls of a floating gate FG
and respective adjacent control gates CG1 and CG2 on opposite sides
of the floating gate. This coupling is through the ONO or other
interpoly dielectric (not shown) that is positioned between these
gates. Also, capacitive coupling C.sub.FS between the floating gate
FG and the substrate through the tunnel dielectric (not shown).
None of the control gates necessarily couples to the floating gates
from their top surfaces, as is customary in conventional
structures. Thus most of the coupling between the two control gates
and the floating gates of each transistor is along the vertical
walls that they share.
The capacitive coupling ratio of the floating gate transistor in
the new configuration can be improved greatly from an increased
physical height of the floating gate and an opposing control gate.
With reference to FIG. 13, the coupling ratio is approximately:
.gamma..times..times..times..times..times..times..times..times.
##EQU00001##
Typically, the tunnel dielectric of capacitor C.sub.FS includes an
SiO.sub.2 film of thickness between 7 and 9 nanometers, while the
dielectric of capacitors C.sub.CF1 and C.sub.CF2 is typically a
sandwich ONO dielectric with an oxide equivalent electrical
thickness of between 14 and 18 nanometers. Therefore, if the area
of capacitive coupling along each of the two vertical walls of the
floating gate is twice the area of channel coupling, then the
coupling ratio equals approximately 0.66, which is quite adequate
for proper device operation. If a higher value is desired, so that
maximum program and erase voltages can be further decreased, this
can be readily achieved by forming all floating gates with a
greater thickness. This increases the coupling area with adjacent
control gates, without increasing the coupling area of the floating
gates with the substrate. The new structure provides a path to
scaling down minimum floating gate transistor feature size without
reducing the coupling ratio .gamma., and without the need to
maintain very high program and erase voltages in highly scaled NAND
devices.
Since the dual control gates are in close physical proximity to the
substrate, a capacitive coupling C.sub.CS1 and C.sub.CS2 between
each of the respective control gates CG1 and CG2 and the underlying
source and drain N+ diffusions is significantly enhanced relative
to the standard NAND that has the control gate on top of the
floating gate. In effect these dual control gates also serve the
function of booster plates that have been suggested by others to be
included in addition to the floating and control gates. The control
gates of the NAND structures described herein have the same
beneficial effect on channel boosting during the program inhibit
mode, yet they do so without the need for a separate booster plate
with its attendant problems.
The basic operating principles of the dual gate NAND embodiments
described above for erasing, programming, program inhibit, and
reading are quite similar to the standard NAND structure, except
that the specific control gate (word) line voltages need to be
applied to the two control gates straddling the selected row of
NAND transistors, one from either side. Furthermore, because each
of the selected control gates is also capacitively coupled to the
floating gate of the NAND transistor floating gate on its other
side, capacitive coupling with appropriate voltages on adjacent
word lines has to be employed to prevent program disturb conditions
or read-inhibit conditions.
A set of exemplary voltages that perform these operations in the
NAND embodiments described above is given in the table of FIG. 15.
As an example, consider that the row of floating gates 28, 31, 34,
37 and 40 (FIGS. 3 and 14) is being accessed for programming. A
single floating gate capacitively coupled with two control gates
results in an equivalent capacitor divider circuit. Assuming for
the purpose of illustration that each of the three capacitances of
each of the floating gates with the control gate 82, the control
gate 83 and the substrate (C.sub.CF1, C.sub.CF2 and C.sub.FS in
FIG. 13) are equal. If 20 volts (V.sub.CG1 and V.sub.CG2) are
applied to each of the control gates lines 82 and 83 and 0 volts to
the substrate, then the voltage of each of the floating gates in
the row will be the sum of these three voltages (40 volts) divided
by 3, or 13.3 volts Therefore, there is a voltage drop of 13.3
volts across the tunnel dielectric layer separating the floating
gate from the substrate channel region. This creates an extremely
high electric field that causes electrons to tunnel from the
substrate through the gate dielectric and onto the floating gate
(Fowler-Nordheim tunneling). Note that in this discussion we are
not including the voltage contribution coming from net negative or
positive charge on any floating gate from a previous erase or
programming operation.
Programming voltages are typically applied in pulse sequences, with
typical pulse duration of several microseconds. At the same time
that the row of floating gates 28, 31, 34, 37 and 40 is being
programmed, the unselected rows of floating gates on either side of
this row should not be allowed to be affected. Floating gates 27,
30, 33, 36 and 39 are in one of these adjacent rows and floating
gates 29, 32, 35, 38 and 41 in the other (FIGS. 3 and 14). However,
one side of each of these floating gates is capacitively coupled to
one of the control gates 82 and 83 that are at 20 volts, in this
example. But the opposite side of each of these floating gates is
at the same time capacitively coupled with either of the control
gates 81 or 84. If the voltages on these control gates are set to 2
volts and the substrate is 0 volts, the floating gate voltages in
these unselected rows will be about 7.3 volts. This voltage across
the floating gate oxide will be insufficient to cause electrons to
tunnel through the oxide from the substrate channel during the
programming pulses.
It will be noted from the table of FIG. 15 that the voltages
applied to control gates not along the selected row of control
gates are set to different voltages, depending upon whether the row
is below or above that being programmed or read. This assumes a
type of NAND in which the rows are programmed sequentially in order
starting from the side of the array connected to VS. Thus, in the
example of FIGS. 3 and 14, the earlier rows of floating gates below
the selected are known to have already been programmed. Similarly,
in a programming operation, it is also known that the later rows
above the selected row are in the erased state. For proper
programming, it is required that the bit line voltage (0V) be
applied at the channel of the floating gate transistor being
programmed. This in turn requires that all series transistors in
the NAND chain that are between the cell being programmed and the
bit line, be turned on during this programming. This requires the
corresponding control gate voltages to be above 0V, typically 1V to
2V. Further, although this discussion references the array of FIGS.
3 and 14, which are more specifically associated with the first
embodiment described above than the second, an array according to
the second embodiment is operated in the same way.
For proper read sensing to occur, all of the unselected transistors
in the NAND should be conducting, i.e. in their "on" state, to
allow proper interrogation of the one selected memory cell
transistor in each string that is in the selected row. Assuming it
requires a minimum of 3.3 volt on the floating gate to ensure
conduction in a memory transistor programmed to the highest
threshold state, and that capacitances between floating gate to
substrate and floating gate to adjacent control gate are all equal,
then the sum of the two adjacent control gate voltages should be a
minimum of 10 volt. FIG. 16 shows one NAND string consisting of 8
transistors (T0-T7) and 9 word lines (WL0-WL8) for simplicity, but
it is assumed that the actual array consists of multiple parallel
NAND strings, each with 16, 32 or more transistors as described
previously in regard to FIGS. 3 and 14. Assuming multi-state
transistor T4 is selected for reading and that the desired reading
mechanism is successive increase of the floating gate voltage until
bit line conduction is observed, the voltage on the floating gate
should be increased sequentially from a low value to the high value
(3.3 volt) in nearly as many steps as there are states in the cell.
For example, if four states are stored in the cell, at least three
voltage steps are required to differentiate between the four
states.
There are a variety of ways to satisfy this condition. One possible
approach is to place V.sub.R0 volt on both of the word lines (WL4
and WL5) immediately adjacent to the selected transistor (T4),
10-V.sub.R0 volt on the next adjacent word lines (WL3 and WL6) both
above and below the selected cell, and continue this alternating
pattern of V.sub.R0 volt and 10-V.sub.R0 volt on all the remaining
word lines working outward both above and below the selected
transistor until voltages are applied to all word lines. V.sub.R0
is chosen as the control gate voltage that when applied to both of
the adjacent control gates will distinguish the lowest threshold
state (erase) from the lowest programmed charge storage state
("1"). Typical values would be between 0 and 1 volt. Then the bit
line current is sensed to determine presence or absence of
conduction. These voltage conditions result in all unselected
transistors having a voltage of 10 volt on the sum of their
adjacent control gates resulting in a floating gate voltage of 3.3
volt which is above the highest possible floating gate state and
will guarantee conduction of all unselected transistors. To read
the next state of the selected cell all word lines at V.sub.R0 volt
are set to a new voltage, V.sub.R1, and all word lines at
10-V.sub.R0 volt are set to a new voltage 10-V.sub.R1 and the
absence or presence of bit line current is sensed. In a similar
fashion to V.sub.R0, V.sub.R1 is chosen to distinguish between the
lowest programmed state ("1") and the next highest programmed state
("2"). This process is continued until all possible programmed
states are sensed. This approach maintains a constant and minimum
necessary voltage on each floating gate and tends to minimize the
possibility of a read disturb condition to the charge state of all
floating gates.
An alternate approach to read the selected floating gate state is
to place V.sub.R0 volt on both of the word lines (WL4 and WL5)
immediately adjacent to the selected transistor (T4), 10-V.sub.R0
volt on the next adjacent word lines (WL3 and WL6) both above and
below the selected cell, and 5 volts on all remaining word lines.
As the voltage on the selected word lines is raised, the voltage on
the two adjacent word lines can be lowered by the same amount. This
approach has the advantage that a maximum of four control gates are
being switched but has the disadvantage that the transistors
adjacent to the selected transistor are continually stressed more
than necessary because their floating gate voltage is held at 5
volts rather than 3.3 volts as in the previous approach.
Erase by block is performed the same way as prior art NAND blocks.
All control gates in a block are either at 0V (erased block) or
floating (non-erased block) while the local substrate (p-well and
underlying n-well) for the entire array is raised to
.about.20V.
It will be understood that the voltages shown in the table of FIG.
15 are provided by way of an example only, and other voltages may
work equally well or even better. For example, it may be preferable
to sequence the voltages applied to the dual control gates
addressing a certain floating gate, so as to avoid spiking and
excessively high voltages. Furthermore, it may be advantageous to
set the specific voltage on any control gate in the addressed NAND
string to a certain voltage level and then let it float at that
voltage level during the subsequent read, write or erase operation,
relying on the capacitive coupling that exists between every
control gate word line and it's adjacent structures to dynamically
maintain the floated voltage on said control gate. This concept may
be employed to use global word lines to access and selectively set
the voltages on more than one local control gate (word) lines.
Furthermore, as the thicknesses of the various dielectric layers
adjacent to each floating gate are scaled down in future
generations, all voltages should be correspondingly scaled down to
avoid excessively high electric fields with their attendant
possibility of shorts and destructive dielectric breakdown.
CONCLUSION
Although the various aspects of the present invention have been
described with respect to exemplary embodiments thereof, it will be
understood that the present invention is entitled to protection
within the full scope of the appended claims.
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