U.S. patent number 7,037,733 [Application Number 10/343,762] was granted by the patent office on 2006-05-02 for method for measuring temperature, annealing method and method for fabricating semiconductor device.
This patent grant is currently assigned to Matsushita Electric Industrial Co., Ltd.. Invention is credited to Junji Hirase, Emi Kanasaki, Fumitoshi Kawase, Yasushi Naito, Satoshi Shibata, Tatsuo Sugiyama.
United States Patent |
7,037,733 |
Shibata , et al. |
May 2, 2006 |
Method for measuring temperature, annealing method and method for
fabricating semiconductor device
Abstract
When the emissivity .epsilon. on the reverse face of a substrate
10 is measured during annealing processing for the substrate 10,
films made from a material that varies the emissivity .epsilon.,
such as a first DPS film 15 used for forming a plug 15A, a second
DPS film 17 used for forming a capacitor lower electrode 17A and a
third DPS film 20 used for forming a capacitor upper electrode 20A,
are formed on the top face of the substrate 10. On the other hand,
no film made from a material that varies the emissivity .epsilon.,
such as a DPS film, is formed on the reverse face of the substrate
10.
Inventors: |
Shibata; Satoshi (Toyama,
JP), Hirase; Junji (Osaka, JP), Sugiyama;
Tatsuo (Osaka, JP), Kanasaki; Emi (Toyama,
JP), Kawase; Fumitoshi (Toyama, JP), Naito;
Yasushi (Osaka, JP) |
Assignee: |
Matsushita Electric Industrial Co.,
Ltd. (Osaka, JP)
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Family
ID: |
19147666 |
Appl.
No.: |
10/343,762 |
Filed: |
July 1, 2002 |
PCT
Filed: |
July 01, 2002 |
PCT No.: |
PCT/JP02/06655 |
371(c)(1),(2),(4) Date: |
February 04, 2003 |
PCT
Pub. No.: |
WO03/038384 |
PCT
Pub. Date: |
May 08, 2003 |
Prior Publication Data
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Document
Identifier |
Publication Date |
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US 20040023421 A1 |
Feb 5, 2004 |
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Foreign Application Priority Data
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Oct 30, 2001 [JP] |
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2001-332217 |
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Current U.S.
Class: |
438/11; 374/126;
374/129; 374/9; 438/14; 438/18; 438/22; 438/28; 438/35; 438/39 |
Current CPC
Class: |
G01J
5/0003 (20130101) |
Current International
Class: |
H01L
21/66 (20060101); G01J 5/00 (20060101); G01N
25/00 (20060101) |
Field of
Search: |
;374/9,126,128 |
References Cited
[Referenced By]
U.S. Patent Documents
Foreign Patent Documents
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10-321539 |
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Dec 1998 |
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JP |
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11-80953 |
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Mar 1999 |
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JP |
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Other References
Hong, Xiao, "Introduction to Semiconductor Manufacturing
Technology." Prentice Hall, Copyright 2001, ISBN 0-13-022404-9, pp.
6 total. cited by other .
Oh, Minseok., et al. "Impact of Emissivity-Independent Temperature
Control in Rapid Thermal Processing." Ra[id Thermal and Integrated
Processing Symposium, vol. 470, Apr. 1, 1997, pp. 43-48. cited by
other.
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Primary Examiner: Whitehead, Jr.; Carl
Assistant Examiner: Mitchell; James M.
Attorney, Agent or Firm: McDermott Will & Emery LLP
Claims
The invention claimed is:
1. A method for measuring a temperature comprising the steps of:
forming a doped polysilicon film on a top face and a reverse face
of a substrate: removing a portion of said doped polysilicon film
having been formed on said reverse face of said substrate;
measuring emissivity .epsilon. on said reverse face of said
substrate in a state where no doped polysilicon film is formed on
said reverse face of said substrate while annealing said substrate;
and calculating a temperature of said substrate being annealed on
the basis of said measured emissivity .epsilon..
2. The method for measuring a temperature of claim 1, wherein the
step of measuring emissivity .epsilon. includes a step of measuring
reflectance r on said reverse face of said substrate for measuring
said emissivity .epsilon. by using said measured reflectance r.
3. An annealing method for performing annealing on a substrate by
using an annealing system including a substrate placing section, a
heating section for annealing said substrate placed on said
substrate placing section and a measuring section for measuring
emissivity .epsilon. of said substrate placed on said substrate
placing section, comprising the steps of: forming a doped
polysilicon film on a top face and a reverse face of said
substrate; removing a portion of said doped polysilicon film having
been formed on said reverse face of said substrate; measuring said
emissivity .epsilon. on said reverse face of said substrate in a
state where no doped polysilicon film is formed on said reverse
face of said substrate while annealing said substrate; and
performing the annealing on said substrate while controlling an
annealing temperature for said substrate on the basis of said
measured emissivity .epsilon..
4. The annealing method of claim 3, wherein the step of measuring
emissivity .epsilon. includes a step of measuring reflectance r on
said reverse face of said substrate for measuring said emissivity
.epsilon. by using said measured reflectance r.
5. The annealing method of claim 3, wherein said doped polysilicon
film is simultaneously formed on said top face and said reverse
face of said substrate.
6. The annealing method of claim 3, wherein said heating section
has a temperature gradient formed in a given region therein, and
the step of performing the annealing on said substrate includes a
step of controlling said annealing temperature for said substrate
by controlling a position for holding said substrate within said
given region with said substrate placing section.
7. A method for fabricating a semiconductor device using an
annealing system including a substrate placing section, a heating
section for annealing a substrate placed on said substrate placing
section and a measuring section for measuring emissivity .epsilon.
of said substrate placed on said substrate placing section,
comprising the steps of: forming a doped polysilicon film on a top
face and a reverse face of said substrate before placing said
substrate on said substrate placing section; removing a portion of
said doped polysilicon film having been formed on said reverse face
of said substrate before placing said substrate on said substrate
placing section; measuring said emissivity .epsilon. on a reverse
face of said substrate with said measuring section while placing
said substrate on said substrate placing section in a state where
no doped polysilicon film is formed on said reverse face of said
substrate while annealing said substrate with said heating section;
and performing the annealing on said substrate while controlling an
annealing temperature for said substrate on the basis of said
measured emissivity .epsilon..
8. The method for fabricating a semiconductor device of claim 7,
wherein the step of measuring said emissivity .epsilon. includes a
step of measuring reflectance r on said reverse face of said
substrate for measuring said emissivity .epsilon. by using said
measured reflectance r.
9. The method for fabricating a semiconductor device of claim 7,
wherein said doped polysilicon film is simultaneously formed on
said top face and said reverse face of said substrate.
10. The method for fabricating a semiconductor device of claim 7,
wherein said heating section has a temperature gradient formed in a
given region therein, and the step of performing annealing on said
substrate includes a step of controlling said annealing temperature
for said substrate by controlling a position for holding said
substrate within said given region with said substrate placing
section.
11. A method for fabricating a semiconductor device using an
annealing system including a substrate placing section, a heating
section for annealing a substrate placed on said substrate placing
section and a measuring section for measuring emissivity .epsilon.
of said semiconductor substrate placed on said substrate placing
section, comprising the steps of: forming a doped polysilicon film
in at least a memory cell region on a top face and a reverse face
of said substrate before placing said substrate on said substrate
placing section; removing a portion of said doped polysilicon film
having been formed on said reverse face of said substrate before
placing said substrate on said substrate placing section; measuring
said emissivity .epsilon. on said reverse face of said substrate
with said measuring section while placing said substrate on said
substrate placing section in a state where no doped polysilicon
film is formed on said reverse face of said substrate while
annealing said substrate with said heating section; and performing
the annealing on said substrate while controlling an annealing
temperature for said substrate on the basis of said measured
emissivity .epsilon..
12. The method for fabricating a semiconductor device of claim 11,
wherein the step of measuring said emissivity .epsilon. includes a
step of measuring reflectance r on said reverse face of said
substrate for measuring said emissivity .epsilon. by using said
measured reflectance r.
13. The method for fabricating a semiconductor device of claim 11,
wherein said doped polysilicon film is simultaneously formed on
said top face and said reverse face of said substrate.
14. The method for fabricating a semiconductor device of claim 11,
wherein said heating section has a temperature gradient formed in a
given region therein, and the step of performing annealing on said
substrate includes a step of controlling said annealing temperature
for said substrate by controlling a position for holding said
substrate within said given region with said substrate placing
section.
Description
TECHNICAL FIELD
The present invention relates to a method for accurately measuring
a temperature of an object such as a substrate by measuring the
emissivity of the object, and more particularly, it relates to an
annealing method in which an object is annealed at an accurate
temperature on the basis of the emissivity of the object.
BACKGROUND ART
FIG. 9 schematically shows the cross-sectional structure of a
conventional annealing system, and specifically, a furnace type
annealing system (a hot wall type annealing system).
The annealing system 100 of FIG. 9 includes a vertical furnace 101
of SiC and a coil 102 coiled around the side face of the furnace
101. The inside of the furnace 101 is heated with the coil 102 and
kept at a predetermined temperature. Specifically, a temperature
gradient is formed in a thermal region Rth within the furnace 101,
and for example, the temperature of an upper portion of the thermal
region Rth is set to a relatively high temperature of, for example,
1050.degree. C., and the temperature of a lower portion of the
thermal region Rth is set to a relatively low temperature of, for
example, 850.degree. C.
The annealing system 100 further includes a table 103 for placing a
substrate 10 to be annealed and a support 104 for supporting and
vertically moving the table 103. The substrate 10 can be held in an
arbitrary position within the thermal region Rth by vertically
moving the table 103, so that the substrate 10 can be annealed at a
desired temperature. FIG. 9 shows a state where the table 103 is in
an initial position H0 employed before starting the annealing of
the substrate 10. Also, the table 103 holds the substrate 10 so
that the reverse face of the substrate 10 can be partially
exposed.
The annealing system 100 further includes a cover 105 for housing
the furnace 101, the coil 102 and the table 103, and a substrate
inlet/outlet 106 provided on the cover 105. Specifically, the
substrate 10 inserted into the cover 105 through the substrate
inlet/outlet 106 is placed on the table 103 so as to be annealed at
a desired temperature in the thermal region Rth. The end of the
support 104 opposing the table 103 extends to the outside of the
cover 105.
In order to find out the temperature of the substrate 10 being
annealed, it is necessary to measure the emissivity (thermal
emissivity) .epsilon. and the pyrometer intensity (radiance) I of
the substrate 10 as described later. For this purpose, a
photoirradiation section 107 for irradiating the reverse face of
the substrate 10 placed on the table 103 with measuring light of a
predetermined wavelength is provided on the bottom of the cover
105, and a measuring section 108 for measuring the emissivity
.epsilon. and the pyrometer intensity I on the reverse face of the
substrate 10 is provided outside the cover 105 below the support
104.
Now, the reason why the temperature T can be obtained on the basis
of the emissivity .epsilon. and the pyrometer intensity I will be
described. In general, the pyrometer intensity I of a blackbody is
represented by the following formula I on the basis of Planck's
formula of radiation: I(T,
.lamda.)=2.pi.C1/.lamda..sup.5(exp((C2/(.lamda.T))-1)) Formula
1
As shown in formula 1, the pyrometer intensity I of a blackbody is
a function of the temperature T of the blackbody and the wavelength
.lamda. of the measuring light. In other words, the pyrometer
intensity I is varied in accordance with the temperature T and the
wavelength .lamda.. In formula 1, C1 and C2 are constants.
Also, the pyrometer intensity I of a general object (nonblackbody)
is represented by the following formula 2 using the emissivity
.epsilon. of the object: I(T, .lamda.)=.epsilon.(T,
.lamda.)2.pi.C1/.lamda..sup.5(exp((C2/(.lamda.T))-1)) Formula 2
As shown in formula 2, the emissivity .epsilon. is also a function
of the temperature T of the object and the wavelength .lamda. of
the measuring light. Accordingly, in the case where the wavelength
.lamda. has a specific value, the temperature T is a function of
the emissivity .epsilon. and the pyrometer intensity I, which is
represented by the following formula 3: T=f(.epsilon.(emissivity),
I (pyrometer intensity)) Formula 3
As shown in formula 3, the actual temperature T of an object being
annealed can be obtained by measuring the emissivity .epsilon. and
the pyrometer intensity I. In formula 3, f indicates a function
(temperature measurement function) having variables .epsilon. and
I. Also, in the case where the measuring light irradiating an
object is entirely reflected by the object, the emissivity
.epsilon. of the object is 0, and in the case where the measuring
light irradiating an object is entirely absorbed by the object
(namely, in the case where the object is a blackbody), the
emissivity .epsilon. of the object is 1. In other words, when the
reflectance of the measuring light is r, .epsilon.=1-r.
Accordingly, instead of directly measuring the emissivity
.epsilon., the reflectance r can be measured so as to indirectly
measure the emissivity .epsilon. by using the measured reflectance
r.
As described above, in the annealing system 100 of FIG. 9, the
whole thermal region Rth of the furnace 101 does not have a uniform
temperature but the temperature gradient is formed in the thermal
region Rth. Specifically, the temperature is higher toward the
upper portion of the furnace 101. Accordingly, in order to anneal
the substrate 10 at a desired temperature, the position within the
furnace 101 in which the substrate 10 is held by using the table
103 and the support 104 is significant. At this point, for feedback
control of the annealing temperature for the substrate 10, it is
necessary to measure the emissivity .epsilon. and the pyrometer
intensity I, so as to obtain the temperature of the substrate 10
being annealed on the basis of the measurement result. In the
conventional technique, however, it is difficult to accurately
obtain the temperature of the substrate 10 being annealed.
DISCLOSURE OF THE INVENTION
In consideration of the above, an aim of the invention is
accurately measuring the temperature of an object being annealed,
so that annealing can be performed on the object at an accurate
temperature.
In order to achieve the object, the present inventors have
performed comparative experiments for measuring the emissivities
.epsilon. during annealing of a variety of experiment samples in
each of which a plurality of films of various materials are stacked
on a substrate.
FIG. 10(a) shows the film structures (materials and thicknesses of
the respective films) of the respective experiment samples (samples
A, B and C), and FIGS. 10(b) through 10(d) respectively show the
cross-sectional structures of the samples A, B and C.
As shown in FIG. 10(b), the sample A includes a silicon substrate
50; a silicon oxide film (SiO.sub.2 film) 51 formed on the silicon
substrate 50; a nondoped polysilicon film 52 formed on the
SiO.sub.2 film 51; a silicon oxide film (TEOS oxide film) 53 formed
on the polysilicon film 52 by using TEOS (tetra ethyl ortho
silicate); a phosphorus-doped polysilicon film (first DPS (Doped
Poly-Silicon) film) 54 formed on the TEOS oxide film 53; a silicon
nitride film (SiN film) 55 formed on the first DPS film 54; and a
phosphorus-doped polysilicon film (second DPS film) 56 formed on
the SiN film 55.
Also, as shown in FIG. 10(c), the sample B includes a silicon
substrate 50; a SiO.sub.2 film 51 formed on the silicon substrate
50; a nondoped polysilicon film 52 formed on the SiO.sub.2 film 51;
a TEOS oxide film 53 formed on the polysilicon film 52; a first DPS
film 54 formed on the TEOS oxide film 53; and a SiN film 55 formed
on the first DPS film 54. Specifically, the sample B does not
include the second DPS film 56.
Furthermore, as shown in FIG. 10(d), the sample C includes a
silicon substrate 50; a SiO.sub.2 film 51 formed on the silicon
substrate 50; a nondoped polysilicon film 52 formed on the
SiO.sub.2 film 51; a TEOS oxide film 53 formed on the polysilicon
film 52; and a SiN film 55 formed on the TEOS oxide film 53.
Specifically, the sample C includes neither the first DPS film 54
nor the second DPS film 56.
As shown in FIG. 10(a), the SiO.sub.2 film 51 has a thickness of 3
nm, the polysilicon film 52 has a thickness of 200 nm, the TEOS
oxide film 53 has a thickness of 20 nm, the first DPS film 54 has a
thickness of 250 nm, the SiN film 55 has a thickness of 50 nm, and
the second DPS film 56 has a thickness of 100 nm.
FIG. 11(a) shows the relationships between the annealing time
(specifically, time elapsed from the start of annealing) and the
emissivity .epsilon. obtained with respect to the samples A, B and
C. In FIG. 11(a), the abscissa indicates the annealing time and the
ordinate indicates the emissivity .epsilon.. In this case, the
emissivity .epsilon. is measured by irradiating the substrate top
face (i.e., the principal plane on which the multilayered film of
the various materials is formed) of each sample with light of a
predetermined wavelength. Also, the annealing temperature for each
sample is 1000 degrees. As shown in FIG. 11(a), it is understood
that the emissivity .epsilon. is largely varied with the annealing
time in the sample A (including the two DPS films) and the sample B
(including the one DPS film). On the contrary, it is understood
from FIG. 11(a) that the emissivity .epsilon. is minimally varied
with the annealing time in the sample C (including no DPS film). It
is found from this result that the emissivity .epsilon. is varied
due to the presence of a DPS film in the sample.
Also in the sample C shown in FIG. 11(a), the emissivity .epsilon.
is not constant but slightly varied. As described later, when a
measurement error occurs in the emissivity .epsilon., an error also
occurs in the temperature obtained on the basis of the emissivity
.epsilon.. However, the variation in the emissivity .epsilon. as
that of the sample C, and specifically, variation in the emissivity
.epsilon. with a variation coefficient F of 5% or less, does not
lead to a serious temperature error. In other words, it can be said
that the emissivity .epsilon. is not substantially varied in the
sample C. At this point, the variation coefficient
F=(.epsilon..sub.max (the maximum value of the emissivity
.epsilon.)-.epsilon..sub.min (the minimum value of the emissivity
.epsilon.))/.epsilon..sub.max. Accordingly, in the description and
claims of the present invention, "to vary the emissivity .epsilon."
means "to substantially vary the emissivity .epsilon." (for
example, to vary the emissivity .epsilon. to an extent where the
variation coefficient F exceeds 5%).
FIG. 11(b) shows the relationships between the annealing time and
the emissivity .epsilon. obtained with respect to a plurality of
samples B (samples B1, B2, B3, B4 and B5) fabricated under the
conditions shown in FIG. 10(a). Also in FIG. 11(b), the abscissa
indicates the annealing time and the ordinate indicates the
emissivity .epsilon.. In this case, the method for measuring the
emissivity .epsilon. and the annealing temperature for each sample
are the same as those employed in FIG. 11(a). As shown in FIG.
11(b), in the case where each sample includes a DPS film, the
variation in the emissivity .epsilon. with the annealing time is
completely different even among the samples fabricated under the
same conditions (such as the materials and the thicknesses of the
films).
Specifically, as a result of the comparative experiments made by
the present inventors, it was found that different measured values
of the emissivity .epsilon. may be obtained even in measuring the
emissivity .epsilon. of the same object. Accordingly, it was found
that in the case where a material that varies the emissivity
.epsilon. with the annealing time, such as a DPS film, is included
as in the samples A and B, the emissivity .epsilon. cannot be
accurately measured unless the material is removed before measuring
the emissivity .epsilon.. Also, not only in the case where the
light used for measuring the emissivity .epsilon. (measuring light)
directly irradiates the DPS film (the second DPS film 56) as in the
sample A, namely, in the case where the DPS film is present in the
uppermost portion, but also in the case where the DPS film (the
first DPS film 54) is covered with the film of another material
(the SiN film 55) as in the sample B, the emissivity .epsilon. is
varied. Accordingly, it is necessary to remove, before measuring
the emissivity .epsilon., all DPS films formed on the principal
plane of the substrate that is irradiated with the measuring
light.
In each of the samples A and B, not all the films cause the
variation in the emissivity .epsilon. with the annealing time but
some films such as the SiO.sub.2 film and the SiN film are not
concerned with the variation in the emissivity .epsilon.. Also, the
reason why the emissivity .epsilon. is varied by a DPS film is
presumed to be because the physical properties of the DPS film,
such as the grain size, are changed through the annealing.
Furthermore, the reason why the variation in the emissivity
.epsilon. is different among the samples B1 through B5 fabricated
under the same conditions is presumed to be because the grain size
is changed differently among the samples.
As described so far, in order to accurately measure the emissivity
.epsilon. of an object being annealed, it is necessary to
previously remove a material that varies the emissivity .epsilon..
At this point, in an annealing system, such as the annealing system
100 of FIG. 9, in which the temperature T of an object to be
annealed (specifically, the substrate 10) is obtained by measuring
the emissivity .epsilon. and the pyrometer intensity I thereof so
as to control the temperature T, namely, the annealing temperature
on the basis of the resultant temperature, a measurement error of
the emissivity .epsilon. directly leads to an error in the
temperature T. Specifically, assuming that the measurement error of
the emissivity .epsilon. is .DELTA..epsilon. and the error in the
temperature T is .DELTA.T, the relationship between the errors
.DELTA..epsilon. and .DELTA.T can be represented by the following
formula 4 on the basis of formula 2:
.DELTA.T=T.sup.2.lamda..DELTA..epsilon./(C1.epsilon.) Formula 4
As shown in formula 4, as the measurement error .DELTA..epsilon. of
the emissivity .epsilon. is larger, the error .DELTA.T in the
temperature T is larger. Accordingly, in order to perform annealing
on an object at an accurate temperature by using the annealing
system as shown in FIG. 9, it is indispensable to accurately
measure the emissivity .epsilon. by grasping the state during the
annealing of a plane of the object for measuring the emissivity
.epsilon. (specifically, the reverse face of the substrate 10
irradiated with the measuring light) and by previously removing a
material that varies the emissivity .epsilon. with time from at
least the plane irradiated with the measuring light, so that the
temperature T of the object can be accurately obtained.
The present invention was devised on the basis of the
aforementioned finding, and specifically, the first method for
measuring emissivity of this invention includes a step of measuring
emissivity .epsilon. of an object, while annealing the object
having a first face and a second face, by irradiating the second
face with measuring light of a given wavelength, and in the step of
measuring emissivity .epsilon., a film of a material that varies
the emissivity .epsilon. is formed on the first face and no film of
the material is formed on the second face.
In the first method for measuring emissivity, since the emissivity
.epsilon. of an object is measured in a state where a film of a
material causing variation in the emissivity .epsilon. is not
present on the second face of the object corresponding to a face
irradiated with the measuring light, and therefore, the emissivity
.epsilon. of the object can be prevented from varying during the
annealing, resulting in accurately measuring the emissivity
.epsilon..
In the first method for measuring emissivity, the step of measuring
emissivity .epsilon. may include a step of measuring reflectance r
on the second face of the object for measuring the emissivity
.epsilon. by using the measured reflectance r.
The second method for measuring emissivity of this invention
includes a step of measuring emissivity .epsilon. of an object,
while annealing the object having a first face and a second face,
by irradiating the second face with measuring light of a given
wavelength, and in the step of measuring emissivity .epsilon.,
doped polysilicon is formed on the first face and no doped
polysilicon is formed on the second face.
In the second method for measuring emissivity, the emissivity
.epsilon. of the object is measured in a state where doped
polysilicon is not present on the second face of the object
corresponding to a face irradiated with the measuring light, and
therefore, the emissivity .epsilon. of the object can be prevented
from varying during the annealing, resulting in accurately
measuring the emissivity .epsilon..
In the second method for measuring emissivity, the step of
measuring emissivity .epsilon. may include a step of measuring
reflectance r on the second face of the object for measuring the
emissivity .epsilon. by using the measured reflectance r.
The first method for measuring a temperature of this invention
includes the steps of measuring, while annealing an object having a
first face and a second face, emissivity .epsilon. on the second
face of the object; and calculating a temperature of the object
being annealed on the basis of the measured emissivity .epsilon.,
and in the step of measuring emissivity .epsilon., a film of a
material that varies the emissivity .epsilon. is formed on the
first face and no film of the material is formed on the second
face.
In the first method for measuring a temperature, the emissivity
.epsilon. on the second face of the object is measured in a state
where a film of a material causing variation in the emissivity
.epsilon. is not present on the second face, and the temperature of
the object being annealed is calculated on the basis of the
measured emissivity .epsilon.. Therefore, the emissivity .epsilon.
of the object can be prevented from varying during the annealing,
so as to accurately measure the emissivity .epsilon.. As a result,
on the basis of the measured emissivity .epsilon., for example, by
substituting the measured value of the emissivity .epsilon. in the
temperature measurement function (see formula 3), the temperature
of the object being annealed can be accurately obtained.
In the first method for measuring a temperature, the step of
measuring emissivity .epsilon. may include a step of measuring
reflectance r on the second face of the object for measuring the
emissivity .epsilon. by using the measured reflectance r.
The second method for measuring a temperature of this invention
includes the steps of measuring, while annealing an object having a
first face and a second face, emissivity .epsilon. on the second
face of the object; and calculating a temperature of the object
being annealed on the basis of the measured emissivity .epsilon.,
and in the step of measuring emissivity .epsilon., doped
polysilicon is formed on the first face and no doped polysilicon is
formed on the second face.
In the second method for measuring a temperature, the emissivity
.epsilon. on the second face of the object is measured in a state
where doped polysilicon is not present on the second face, and the
temperature of the object being annealed is calculated on the basis
of the measured emissivity .epsilon.. Therefore, the emissivity
.epsilon. of the object can be prevented from varying during the
annealing, so as to accurately measure the emissivity .epsilon.. As
a result, on the basis of the measured emissivity .epsilon., for
example, by substituting the measured value of the emissivity
.epsilon. in the temperature measurement function (see formula 3),
the temperature of the object being annealed can be accurately
obtained.
In the second method for measuring a temperature, the step of
measuring emissivity .epsilon. may include a step of measuring
reflectance r on the second face of the object for measuring the
emissivity .epsilon. by using the measured reflectance r.
The annealing method of this invention for performing annealing on
a substrate by using an annealing system including a substrate
placing section, a heating section for annealing the substrate
placed on the substrate placing section and a measuring section for
measuring emissivity .epsilon. of the substrate placed on the
substrate placing section, includes the steps of measuring the
emissivity .epsilon. on a reverse face of the substrate with the
measuring section while placing the substrate on the substrate
placing section in a state where a film of a material that varies
the emissivity .epsilon. is formed on a top face of the substrate
and where no film of the material is formed on the reverse face of
the substrate and while annealing the substrate with the heating
section; and performing the annealing on the substrate while
controlling an annealing temperature for the substrate on the basis
of the measured emissivity .epsilon..
In the annealing method of this invention, the emissivity .epsilon.
on the substrate reverse face is measured in a state where a film
of a material causing the variation in the emissivity .epsilon. is
not present on the substrate reverse face, and the annealing is
performed on the substrate while controlling the annealing
temperature on the basis of the measured emissivity .epsilon..
Therefore, the emissivity .epsilon. of the substrate can be
prevented from varying during the annealing, so as to accurately
measure the emissivity .epsilon.. As a result, the annealing can be
performed on the substrate while accurately controlling the
annealing temperature on the basis of the measured emissivity
.epsilon..
In the annealing method of this invention, the step of measuring
emissivity .epsilon. may include a step of measuring reflectance r
on the reverse face of the substrate for measuring the emissivity
.epsilon. by using the measured reflectance r.
The annealing method of this invention preferably further includes,
before the step of measuring the emissivity .epsilon., a step of
removing a film of the material having been formed on the reverse
face of the substrate.
Thus, the annealing of the substrate can be performed at an
accurately temperature by merely adding the step of removing the
film of the material that varies the emissivity .epsilon.having
been formed on the reverse face of the substrate.
Also in this case, the annealing method may further include, before
the step of removing a film of the material, a step of
simultaneously forming the film of the material on the top face and
the reverse face of the substrate.
In the annealing method of this invention, the heating section has
a temperature gradient formed in a given region therein, and the
step of performing the annealing on the substrate may include a
step of controlling the annealing temperature for the substrate by
controlling a position for holding the substrate within the given
region with the substrate placing section.
The first method for fabricating a semiconductor device of this
invention using an annealing system including a substrate placing
section, a heating section for annealing a semiconductor substrate
placed on the substrate placing section and a measuring section for
measuring emissivity .epsilon. of the semiconductor substrate
placed on the substrate placing section, includes the steps of
forming a doped polysilicon film on at least a top face of the
semiconductor substrate before placing the semiconductor substrate
on the substrate placing section; measuring the emissivity
.epsilon. on a reverse face of the semiconductor substrate with the
measuring section while placing the semiconductor substrate on the
substrate placing section in a state where no doped polysilicon
film is formed on the reverse face of the semiconductor substrate
and while annealing the semiconductor substrate with the heating
section; and performing annealing on the semiconductor substrate
while controlling an annealing temperature for the semiconductor
substrate on the basis of the measured emissivity .epsilon..
In the first method for fabricating a semiconductor device, after
forming a polysilicon film doped with an impurity (hereinafter
referred to as the DPS (Doped Poly-Silicon) film) at least on the
top face of the semiconductor substrate, the emissivity .epsilon.on
the reverse face of the semiconductor substrate is measured in a
state where a DPS film, namely, a film of a material that varies
the emissivity .epsilon., is not present on the reverse face of the
semiconductor substrate. Then, the annealing is performed on the
semiconductor substrate while controlling the annealing temperature
on the basis of the measured emissivity .epsilon.. Therefore, the
emissivity .epsilon. of the semiconductor substrate can be
prevented from varying during the annealing, so as to accurately
measure the emissivity .epsilon.. As a result, the annealing can be
performed on the semiconductor substrate while accurately
controlling the annealing temperature on the basis of the measured
emissivity .epsilon.. Accordingly, a semiconductor device having a
planned characteristic can be fabricated.
In the first method for fabricating a semiconductor device, the
step of measuring the emissivity .epsilon. may include a step of
measuring reflectance r on the reverse face of the semiconductor
substrate for measuring the emissivity .epsilon. by using the
measured reflectance r.
In the first method for fabricating a semiconductor device, the
step of forming a polysilicon film preferably includes a step of
simultaneously forming the polysilicon film on the top face and the
reverse face of the semiconductor substrate, and the method for
fabricating a semiconductor device preferably further includes,
between the step of forming a polysilicon film and the step of
measuring the emissivity .epsilon., a step of removing a portion of
the polysilicon film having been formed on the reverse face of the
semiconductor substrate.
Thus, the annealing of the semiconductor substrate can be performed
at an accurate temperature by merely adding the step of removing
the DPS film having been formed on the reverse face of the
semiconductor substrate, so that a semiconductor device having a
planned characteristic can be fabricated.
In the first method for fabricating a semiconductor device, the
heating section has a temperature gradient formed in a given region
therein, and the step of performing annealing on the semiconductor
substrate may include a step of controlling the annealing
temperature for the semiconductor substrate by controlling a
position for holding the semiconductor substrate within the given
region with the substrate placing section.
The second method for fabricating a semiconductor device of this
invention using an annealing system including a substrate placing
section, a heating section for annealing a semiconductor substrate
placed on the substrate placing section and a measuring section for
measuring emissivity .epsilon. of the semiconductor substrate
placed on the substrate placing section, includes the steps of
forming a doped polysilicon film in at least a memory cell forming
region on a top face of the semiconductor substrate before placing
the semiconductor substrate on the substrate placing section;
measuring the emissivity .epsilon. on a reverse face of the
semiconductor substrate with the measuring section while placing
the semiconductor substrate on the substrate placing section in a
state where no doped polysilicon film is formed on the reverse face
of the semiconductor substrate and while annealing the
semiconductor substrate with the heating section; and performing
annealing on the semiconductor substrate while controlling an
annealing temperature for the semiconductor substrate on the basis
of the measured emissivity .epsilon..
In the second method for fabricating a semiconductor device, the
emissivity .epsilon. on the reverse face of the semiconductor
substrate is measured after forming a DPS film at least in a memory
cell forming region on the top face of the semiconductor device,
and in a state where a DPS film, namely, a film of a material that
varies the emissivity .epsilon., is not present on the reverse face
of the semiconductor substrate. Then, the annealing is performed on
the semiconductor substrate while controlling the annealing
temperature on the basis of the measured emissivity .epsilon..
Therefore, the emissivity .epsilon.of the semiconductor substrate
can be prevented from varying during the annealing, so as to
accurately measure the emissivity .epsilon.. As a result, the
annealing can be performed on the semiconductor substrate while
accurately controlling the annealing temperature on the basis of
the measured emissivity .epsilon.. Accordingly, a memory-embedded
type semiconductor device having a planned characteristic can be
fabricated.
In the second method for fabricating a semiconductor device, the
step of measuring the emissivity .epsilon. may include a step of
measuring reflectance r on the reverse face of the semiconductor
substrate for measuring the emissivity .epsilon. by using the
measured reflectance r.
In the second method for fabricating a semiconductor device, the
step of forming a polysilicon film preferably includes a step of
simultaneously forming the polysilicon film entirely over the top
face and the reverse face of the semiconductor substrate, and the
method for fabricating a semiconductor device preferably further
includes, between the step of forming a polysilicon film and the
step of measuring the emissivity .epsilon., a step of removing a
portion of the polysilicon film formed in a region excluding the
memory cell forming region on the top face of the semiconductor
substrate and a portion of the polysilicon film formed on the
reverse face of the semiconductor substrate.
Thus, the annealing of the semiconductor substrate can be performed
at an accurate temperature merely by adding the step of removing
the DPS film having been formed on the reverse face of the
semiconductor substrate, so that a semiconductor device having a
planned characteristic can be fabricated. When the step of removing
the DPS film having been formed on the reverse face of the
semiconductor substrate is performed simultaneously with a step of
removing the portion of the DPS film formed in the region excluding
the memory cell forming region on the top face of the semiconductor
substrate, substantial increase of the number of procedures can be
avoided.
In the second method for fabricating a semiconductor device, the
heating section has a temperature gradient formed in a given region
therein, and the step of performing annealing on the semiconductor
substrate may include a step of controlling the annealing
temperature for the semiconductor substrate by controlling a
position for holding the semiconductor substrate within the given
region with the substrate placing section.
BRIEF DESCRIPTION OF DRAWINGS
FIGS. 1(a) through 1(c) are cross-sectional views for showing
procedures in a method for fabricating a semiconductor device
according to an embodiment of the invention.
FIGS. 2(a) through 2(c) are cross-sectional views for showing
procedures in the method for fabricating a semiconductor device
according to the embodiment of the invention.
FIGS. 3(a) through 3(c) are cross-sectional views for showing
procedures in the method for fabricating a semiconductor device
according to the embodiment of the invention.
FIGS. 4(a) and 4(b) are cross-sectional views for showing
procedures in the method for fabricating a semiconductor device
according to the embodiment of the invention.
FIGS. 5(a) and 5(b) are cross-sectional views for showing
procedures in the method for fabricating a semiconductor device
according to the embodiment of the invention.
FIG. 6 is a diagram for schematically showing an example of the
cross-sectional structure of a CVD system used in the method for
fabricating a semiconductor device according to the embodiment of
the invention.
FIG. 7 is a diagram for schematically showing an example of the
cross-sectional structure of a plasma CVD system used in the method
for fabricating a semiconductor device according to the embodiment
of the invention.
FIGS. 8(a) and 8(b) are diagrams for schematically showing the
inside states of an annealing system performing annealing in the
method for fabricating a semiconductor device according to the
embodiment of the invention.
FIG. 9 is a diagram for schematically showing the cross-sectional
structure of a general hot wall type annealing system used in the
method for fabricating a semiconductor device according to the
embodiment of the invention.
FIG. 10(a) is a table for showing the film structures (the
materials and the thicknesses of respective films) of samples A, B
and C used in comparative experiments performed by the present
inventors for measuring the emissivity .epsilon., FIG. 10(b) is a
cross-sectional view of the sample A, FIG. 10(c) is a
cross-sectional view of the sample B and FIG. 10(d) is a
cross-sectional view of the sample C.
FIG. 11(a) is a diagram for showing relationships between the
annealing time and the emissivity .epsilon. obtained with respect
to the samples A, B and C, and FIG. 11(b) is a diagram for showing
relationships between the annealing time and the emissivity
.epsilon. obtained with respect to a plurality of samples B
(samples B1, B2, B3, B4 and B5).
BEST MODE FOR CARRYING OUT THE INVENTION
Now, a method for fabricating a semiconductor device according to
an embodiment of the invention will be described with reference to
the drawings by exemplifying an embedded-DRAM type semiconductor
device including a memory cell region and a logic region. In the
following description, a principal plane of a substrate on which
devices such as a transistor are formed is designated as a top face
and a principal plane thereof on which devices are not formed is
designated as a reverse face. In other words, devices are formed on
the top face of the substrate but no devices are formed on the
reverse face of the substrate.
FIGS. 1(a) through 1(c), 2(a) through 2(c), 3(a) through 3(c),
4(a), 4(b), 5(a) and 5(b) are cross-sectional views for showing
procedures in the method for fabricating a semiconductor device
according to this embodiment.
First, as shown in FIG. 1(a), on the top face of a silicon
substrate 10 having a memory cell region R1 and a logic region R2,
a silicon oxide film 11 with a thickness of approximately 3 nm
serving as a gate insulating film is formed by annealing. At this
point, the silicon oxide film 11 is formed also on the reverse face
of the silicon substrate 10. Next, the silicon substrate 10 is set
in a CVD system for depositing a polysilicon film, for example, as
shown in FIG. 6, so that a polysilicon (nondoped) film 12 with a
thickness of approximately 200 nm to be formed into a gate
electrode is deposited on the silicon oxide film 11. Specifically,
as shown in FIG. 6, the silicon substrate 10 of a silicon wafer is
placed on a wafer holder 31 provided within a quartz tube 30
vertically, namely, with the top and reverse faces of the silicon
substrate 10 extending perpendicularly to the wafer holder 31. The
quartz tube 30 has a gas inlet 32 and a gas outlet 33, and when a
process gas 34, such as a SiH.sub.4 gas, for forming a polysilicon
film is supplied through the gas inlet 32, the polysilicon film 12
is deposited on the silicon substrate 10. At this point, since the
reverse face of the silicon substrate 10 is supported on the wafer
holder 31 with a small fixing member (not shown), the substrate
reverse face is also exposed to the process gas 34, resulting in
depositing the polysilicon film 12 also on the substrate reverse
face.
Next, after the silicon substrate 10 is taken out from the CVD
system, the polysilicon film 12 deposited on the substrate top face
is etched, thereby forming gate electrodes 12A from the polysilicon
film 12 and gate insulating films 11A from the silicon oxide film
11 respectively in the memory cell region R1 and the logic region
R2 on the top face of the silicon substrate 10 as shown in FIG.
1(b). At this point, the polysilicon film 12 remains to entirely
cover the substrate reverse face. Next, ion implantation is
performed on the top face of the silicon substrate 10 by using the
gate electrodes 12A used as a mask, thereby forming impurity
diffusion layers (not shown) serving as extension regions for
transistors. At this point, the ion implantation is not performed
on the reverse face of the silicon substrate 10.
Next, the silicon substrate 10 is set in, for example, a CVD system
similar to that of FIG. 6, so as to deposit a TEOS oxide film
(SiO.sub.2 film) 13 with a thickness of approximately 20 nm over
the entire top face of the silicon substrate 10. At this point, the
TEOS oxide film 13 is deposited also on the substrate reverse face.
Thereafter, after taking out the silicon substrate 10 from the CVD
system, the TEOS oxide film 13 deposited on the substrate top face
is etched back, thereby forming side walls 13A from the TEOS oxide
film 13 on the side faces of the gate electrodes 12A as shown in
FIG. 1(c). Next, the ion implantation is performed on the top face
of the silicon substrate 10 by using the gate electrodes 12A and
the side walls 13A used as a mask, thereby forming impurity
diffusion layers (not shown) serving as source/drain regions of the
transistors. In this manner, a memory cell transistor including the
gate electrode 12A and the like is formed in the memory cell region
R1, and a logic transistor including the gate electrode 12A and the
like is formed in the logic region R2. The ion implantation is not
performed on the reverse face of the silicon substrate 10.
Next, the silicon substrate 10 is set in a plasma CVD system for
depositing a silicon oxide film, for example, as shown in FIG. 7,
so as to form a planarized film 14 of a silicon oxide film with a
thickness of approximately 500 nm over the entire top face of the
silicon substrate 10 as shown in FIG. 2(a). Specifically, as shown
in FIG. 7, the silicon substrate 10 of a silicon wafer is placed on
a wafer holder 40 of the plasma CVD system laterally, namely, with
the reverse face of the silicon substrate 10 in contact with the
wafer holder 40. Then, when the top face of the silicon substrate
10 is exposed to plasma 41 made of a gas including, for example,
SiH.sub.4, N.sub.2O, PH.sub.3 and B.sub.2H.sub.6, the silicon oxide
film serving as the planarized film 14 is formed. At this point,
the reverse face of the silicon substrate 10 is not exposed to the
plasma 41, and hence, no silicon oxide film is deposited on the
substrate reverse face.
In the subsequent procedures, a memory cell is formed in the memory
cell region R1 alone. In other words, no memory cell is formed in
the logic region R2. Specifically, after taking out the silicon
substrate 10 from the plasma CVD system, a contact hole 14a
reaching a predetermined portion in the memory cell region R1 of
the silicon substrate 10 (the source/drain region of the memory
cell transistor) is first formed in the planarized film 14 as shown
in FIG. 2(a).
Next, the silicon substrate 10 is set in, for example, a CVD system
similar to that of FIG. 6, and for example, a SiH.sub.4 gas and a
PH.sub.3 gas are used as the process gas, so as to deposit a
phosphorus-doped polysilicon film (first DPS film) 15 with a
thickness of approximately 250 nm over the entire top face of the
silicon substrate 10 including the contact hole 14a as shown in
FIG. 2(b). At this point, the first DPS film 15 is deposited also
on the substrate reverse face.
Next, after taking out the silicon substrate 10 from the CVD
system, a portion of the first DPS film 15 deposited on the
substrate top face outside the contact hole 14a is removed by
etching, thereby forming a plug 15A from the first DPS film 15 as
shown in FIG. 2(c). At this point, the first DPS film 15 deposited
on the substrate reverse face is also removed simultaneously with
or at different timing from the unnecessary portion of the first
DPS film 15 deposited on the substrate top face. For example, after
forming the plug 15A with allowing the first DPS film 15 deposited
on the substrate reverse face to remain, the first DPS film 15
deposited on the substrate reverse face may be removed by wet
etching with the substrate top face covered with a resist film.
Thus, a film that varies the emissivity .epsilon. of the silicon
substrate 10 is removed.
Next, the silicon substrate 10 is set in, for example, a plasma CVD
system similar to that of FIG. 7, so as to deposit a BPSG
(boro-phospho silicate glass) film 16 with a thickness of
approximately 500 nm over the entire top face of the silicon
substrate 10 as shown in FIG. 3(a). At this point, the BPSG film 16
is not deposited on the substrate reverse face. Thereafter, an
opening 16a is formed in the BPSG film 16 so as to expose the plug
15A formed in the memory cell region R1.
Next, after taking out the silicon substrate 10 from the plasma CVD
system, the silicon substrate 10 is set in, for example, a CVD
system similar to that of FIG. 6, and for example, a SiH.sub.4 gas
and a PH.sub.3 gas are used as the process gas. Thus, as shown in
FIG. 3(b), a phosphorus-doped polysilicon film (second DPS film) 17
with a thickness of approximately 100 nm is deposited over the
entire top face of the silicon substrate 10 so as to fill the
opening 16a halfway. At this point, the second DPS film 17 is
deposited also on the substrate reverse face.
Next, after taking out the silicon substrate 10 from the CVD
system, a resist film 18 is formed over the entire tope face of the
silicon substrate 10 as shown in FIG. 3(c), and while covering the
second DPS film 17 deposited on the substrate top face with the
resist film 18, the second DPS film 17 deposited on the substrate
reverse face is removed by the wet etching. Thus, a film that
varies the emissivity .epsilon. of the silicon substrate 10 is
removed. Thereafter, as shown in FIG. 4(a), a portion of the second
DPS film 17 deposited on the substrate top face outside the opening
16a is removed by the etching. Thus, a capacitor lower electrode
17A connected to the plug 15A is formed from the portion of the
second DPS film 17 remaining on the wall and the bottom of the
opening 16a.
Next, as shown in FIG. 4(b), after removing the BPSG film 16, for
example, a CVD system similar to that of FIG. 6 is used, so that a
silicon nitride film (SiN film) 19 with a thickness of
approximately 50 nm to be formed into a capacitor dielectric film
and a phosphorus-doped polysilicon film (third DPS film) 20 with a
thickness of approximately 100 nm to be formed into a capacitor
upper electrode (plate electrode) can be successively deposited
over the entire top face of the silicon substrate 10 as shown in
FIG. 5(a). At this point, the SiN film 19 and the third DPS film 20
are deposited also on the substrate reverse face.
Next, after taking out the silicon substrate 10 from the CVD
system, the SiN film 19 and the third DPS film 20 deposited on the
substrate top face are patterned by the etching as shown in FIG.
5(b). Thus, a capacitor upper electrode 20A made from the third DPS
film 20 is formed above the capacitor lower electrode 17A with a
capacitor dielectric film 19A made from the SiN film 19 sandwiched
therebetween. At this point, the third DPS film 20 deposited on the
substrate reverse face is also removed simultaneously or at
different timing from the unnecessary portion of the third DPS film
20 deposited on the substrate top face. For example, after forming
the capacitor upper electrode 20A with allowing the third DPS film
20 deposited on the substrate reverse face to remain, the third DPS
film 20 deposited on the substrate reverse face may be removed by
the wet etching with the substrate top face covered with a resist
film. Thus, a film that varies the emissivity .epsilon. of the
silicon substrate 10 is removed.
Through the aforementioned procedures, a memory cell provided with
the transistor including the gate electrode 12A and the like and a
capacitor including the capacitor lower electrode 17A, the
capacitor dielectric film 19A and the capacitor upper electrode 20A
is formed in the memory cell region R1 on the substrate top face,
and the logic transistor including the gate electrode 12A and the
like is formed in the logic region R2 on the substrate top face.
Also, after completing the aforementioned procedures, the
semiconductor device under fabrication has a film structure free
from a DPS film present on the substrate reverse face (namely, the
plane on which the emissivity .epsilon. is to be measured).
Next, the silicon substrate 10 in which the memory cell and the
logic transistor have been formed (hereinafter simply referred to
as the substrate 10) is subjected to annealing. Specifically, a
general annealing system, such as the hot wall type annealing
system 100 shown in FIG. 9, is used for performing the annealing
for activating an impurity included in the source/drain regions of
the transistors formed on the substrate 10. At this point, the
emissivity .epsilon. of the substrate 10 is measured by irradiating
the reverse face of the substrate 10 being annealed with measuring
light of a predetermined wavelength, and while monitoring the
temperature T of the substrate 10 on the basis of the measured
emissivity .epsilon., the substrate 10 is held in a position
corresponding to a desired temperature (of, for example,
1000.degree. C.) within the thermal region Rth (shown in FIG. 9)
for performing the annealing for, for example, 10 seconds. Also, as
shown in FIG. 9, the substrate 10 is inserted into the cover 105 of
the annealing system 100 through the substrate inlet/outlet 106 to
be placed on the table 103. Furthermore, the substrate 10 is held
in a desired position in the thermal region Rth within the furnace
101 formed by using the coil 102 by vertically moving the table 103
with the support 104. Additionally, the photoirradiation section
107 provided in the lower portion of the annealing system 100
irradiates the reverse face of the substrate 10 with light of a
wavelength .lamda. of, for example, 950 nm, and the emissivity
.epsilon. and the pyrometer intensity I on the reverse face of the
substrate 10 are measured with the measuring section 108 provided
below the support 104, so that the temperature T of the substrate
10 can be monitored on the basis of the measurement result.
FIGS. 8(a) and 8(b) schematically show the inside states of the
annealing system during the annealing performed in the method for
fabricating a semiconductor device of this embodiment.
First, as shown in FIG. 8(a), when the annealing of the substrate
10 is started, the substrate 10 together with the table 103 is
elevated by using the support 104 from the initial position H0
(shown in FIG. 9) to an annealing start position H1 (the
corresponding annealing temperature: 1050.degree. C.). Thereafter,
while holding the substrate 10 in the annealing start position H1
for a while, the temperature T of the substrate 10 is
monitored.
Next, when the monitored temperature T is increased close to
1000.degree. C., as shown in FIG. 8(b), the substrate 10 is lowered
by using the support 104 from the annealing start position H1
(shown in FIG. 8(a)) to an annealing hold position H2 (the
corresponding annealing temperature: 1000.degree. C.). Thereafter,
the substrate 10 is held in the annealing hold position H2 for 10
seconds, thereby annealing the substrate 10 at 1000.degree. C. for
10 seconds. During this annealing, by measuring the emissivity
.epsilon. on the reverse face of the substrate 10 and monitoring
the temperature T of the substrate 10 on the basis of the measured
emissivity .epsilon., the position for holding the substrate 10 is
feedback controlled so as to keep the temperature T at 1000.degree.
C.
After completing the annealing of the substrate 10, the substrate
10 is lowered by using the support 104 from the annealing hold
position H2 to the initial position H0. Thereafter, the substrate
10 is naturally cooled, and then, the substrate 10 is taken out
from the annealing system 100 through the substrate inlet/outlet
106.
The description of subsequent procedures of this embodiment is
omitted, and this embodiment attains the following effects: In the
annealing processing for the substrate 10 (specifically, the
annealing processing for activating the impurity included in the
source/drain regions of the transistors), when the emissivity
.epsilon. on the reverse face of the substrate 10 is measured, the
films made from materials that vary the emissivity .epsilon., such
as the first DPS film 15 used for forming the plug 15A, the second
DPS film 17 used for forming the capacitor lower electrode 17A and
the third DPS film 20 used for forming the capacitor upper
electrode 20A, are formed on the top face of the substrate 10. On
the other hand, a film that varies the emissivity .epsilon., such
as a DPS film, is not formed on the reverse face of the substrate
10. Therefore, the emissivity .epsilon. can be prevented from
varying during the annealing of the substrate 10, and hence, the
emissivity .epsilon. can be accurately measured. As a result, on
the basis of the measured emissivity .epsilon., for example, by
substituting the measured value of the emissivity .epsilon. in the
temperature measurement function (see formula 3), the temperature
of the substrate 10 being annealed can be accurately obtained.
Accordingly, the annealing can be performed on the substrate 10
while accurately controlling the annealing temperature for the
substrate 10, and therefore, a semiconductor device including a
transistor that exhibits a planned characteristic can be
fabricated.
Also in this embodiment, each of the DPS films formed on the
substrate reverse face respectively simultaneously with the first
DPS film 15, the second DPS film 17 and the third DPS film 20
formed on the top face of the substrate 10 is removed every time it
is formed. More specifically, the first DPS film 15 used for
forming the plug 15A, the second DPS film 17 used for forming the
capacitor lower electrode 17A and the third DPS film 20 used for
forming the capacitor upper electrode 20A are first respectively
formed in the memory cell region R1 on the top face of the
substrate 10. Thereafter, the unnecessary portion of each DPS film
formed on the substrate top face (i.e., each DPS film formed in a
region other than the memory cell region R1 on the substrate top
face) is removed and each DPS film formed on the substrate reverse
face is removed, and thereafter, the annealing is performed on the
substrate 10 while measuring the emissivity .epsilon. of the
substrate 10. Specifically, the emissivity .epsilon. can be
accurately measured merely by additionally performing the
procedures for removing the DPS films formed on the reverse face of
the substrate 10, so that the annealing can be performed on the
substrate 10 at an accurate temperature. Therefore, an
embedded-DRAM type semiconductor device with a planned
characteristic can be fabricated.
Although merely the DPS films (the first DPS film 15, the second
DPS film 17 and the third DPS film 20) formed on the reverse face
of the substrate 10 are removed in this embodiment, the silicon
oxide film 11, the polysilicon (nondoped) film 12, the TEOS oxide
film 13 or the SiN film 19 may be removed from the substrate
reverse face in addition to the DPS films. Also, each DPS film may
be a polysilicon film doped with an impurity other than
phosphorus.
Furthermore, in this embodiment, when the first DPS film 15, the
second DPS film 17 and the third DPS film 20 are formed on the top
face of the substrate 10, the respective DPS films are formed also
on the substrate reverse face. Instead, a system similar to, for
example, that of FIG. 7 may be used for depositing the DPS films,
namely, the DPS films may be deposited by using a CVD system in
which the substrate reverse face is in contact with the wafer
holder, so as not to form the DPS films on the substrate reverse
face. Thus, the procedures for removing the respective DPS films
formed on the substrate reverse face can be omitted. However, even
in the case where a DPS film is formed on the substrate reverse
face, substantial increase of the number of procedures can be
avoided by removing the DPS film formed on the substrate reverse
face simultaneously with the unnecessary portion of the DPS film
formed on the substrate top face.
Also in this embodiment, before forming the capacitor including the
capacitor lower electrode 17A, the capacitor dielectric film 19A
and the capacitor upper electrode 20A, the ion implantation is
performed on the substrate 10 for forming the source/drain regions
of the transistor including the gate electrode 12A and the like.
Instead, the source/drain regions may be formed, after forming the
capacitor, by performing the ion implantation on the substrate 10
with partly opening, for example, the planarized film 14.
Moreover, in this embodiment, the annealing for activating the
impurity included in the source/drain regions is performed with the
DPS films formed on the top face of the substrate 10 and with no
DPS film formed on the reverse face of the substrate 10 that is
irradiated with light for measuring the emissivity .epsilon.. This
does not limit the invention but the same effects as those of this
embodiment can be attained when any annealing is performed with a
film made from a material that varies the emissivity .epsilon.
formed on the top face of the substrate 10 and with no film made
from a material that varies the emissivity .epsilon. formed on the
reverse face of the substrate 10 corresponding to the plane
irradiated with the measuring light.
Furthermore, the hot wall type annealing system as shown in FIG. 9,
specifically, an annealing system in which the temperature gradient
is formed in the thermal region Rth and the substrate annealing
temperature is controlled by adjusting a substrate hold position in
the thermal region Rth, is used in this embodiment. However, an
annealing system usable in this embodiment is not particularly
specified as far as it includes a substrate placing section, a
heating section for annealing a substrate placed on the substrate
placing section and a measuring section for measuring the
emissivity .epsilon. on the reverse face of the substrate placed on
the substrate placing section.
In addition, subjects of this embodiment are the annealing
performed on a substrate during the fabrication of a semiconductor
device and the measurement of the emissivity .epsilon. and the
temperature T of the substrate during the annealing. However, this
does not limit the invention but it goes without saying that the
subject may be annealing performed on any of a variety of objects
or the measurement of the emissivity .epsilon. or the temperature T
of the object.
Moreover, although the emissivity .epsilon. on the reverse face of
the substrate 10 is directly measured in this embodiment, the
reflectance r on the reverse face of the substrate 10 may be
measured instead so as to indirectly measure the emissivity
.epsilon. by using the measured reflectance r. This is because the
emissivity .epsilon. may be obtained on the basis of the
relationship formula, .epsilon.=1-r.
* * * * *