U.S. patent number 5,265,143 [Application Number 08/000,857] was granted by the patent office on 1993-11-23 for x-ray optical element including a multilayer coating.
This patent grant is currently assigned to AT&T Bell Laboratories. Invention is credited to Kathleen R. Early, Richard E. Howard, Donald M. Tennant, Warren K. Waskiewicz, David L. Windt.
United States Patent |
5,265,143 |
Early , et al. |
November 23, 1993 |
X-ray optical element including a multilayer coating
Abstract
In one aspect, the invention involves an optical element in an
x-ray imaging system. The element comprises a substrate overlain by
a multilayer coating. The multilayer coating comprises plural first
and at least second material layers in alternation. This coating is
soluble in at least one etchant solution at an etching temperature
less than 100.degree. C. The optical element further comprises a
barrier layer intermediate the substrate and the multilayer
coating. The barrier layer is relatively insoluble in the etchant
solution at the etching temperature. In a second aspect of the
invention, the optical element comprises a substrate and a
multilayer coating as described above, and further comprises a
release layer that underlies the multilayer coating. The release
layer comprises a material that is relatively soluble in at least
one etchant solution at an etching temperature less than
100.degree. C. In contrast to release layers of the prior art, the
inventive release layer comprises germanium.
Inventors: |
Early; Kathleen R. (Middletown,
NJ), Howard; Richard E. (Highland Park, NJ), Tennant;
Donald M. (Freehold, NJ), Waskiewicz; Warren K.
(Clinton, NJ), Windt; David L. (Springfield, NJ) |
Assignee: |
AT&T Bell Laboratories
(Murray Hill, NJ)
|
Family
ID: |
21693311 |
Appl.
No.: |
08/000,857 |
Filed: |
January 5, 1993 |
Current U.S.
Class: |
378/84; 378/85;
378/145 |
Current CPC
Class: |
G21K
1/062 (20130101); B82Y 10/00 (20130101); G21K
2201/067 (20130101); G21K 2201/061 (20130101) |
Current International
Class: |
G21K
1/06 (20060101); G21K 1/00 (20060101); G21K
001/06 () |
Field of
Search: |
;378/84,83,34,35,145 |
References Cited
[Referenced By]
U.S. Patent Documents
Other References
D W. Berreman et al., "Soft-x-ray projection lithography: printing
of 0.2-um features using a 20:1 reduction", Optics Letters, vol.
15, No. 10, May 15, 1990, 529-531. .
N. M. Ceglio, et al., "Soft X-Ray Projection Lithography System
Design", OSA Proceedings on Soft-X-Ray Projection Lithography,
1991, vol. 12, J. Bokor, ed., Optical Society of America (1991)
5-10. .
D. P. Gaines, et al., "Repair of high performance multilayer
coatings", SPIE vol. 1547 Multilayer Optics for Advanced X-Ray
Applicaitons (1991) 228-238. .
D. L. Windt, et al., "Interface Imperfections in Metal/Si X-Ray
Multilayer Structures", O.S.A. Proc. on Soft-X-Ray Projection
Lithography 12, (1991) 82-86. .
T. A. Shankoff, et al., "High Resolution Tungsten Patterning Using
Buffered, Mildly Basic Etching Solutions", J. Electrochem. Soc.:
Solid-State Science and Technology 122 (1975) 294-298..
|
Primary Examiner: Porta; David P.
Attorney, Agent or Firm: Finston; Martin I.
Claims
We claim:
1. In an x-ray imaging system, an optical element which comprises a
substrate having a principal surface, and overlying said surface, a
multilayer coating, wherein said coating comprises plural first and
at least second material layers in alternation, said coating
exhibits a peak reflectivity at least at one x-ray wavelength, and
said coating is soluble in at least one etchant solution at an
etching temperature less than 130.degree. C.,
characterized in that
a) the optical element further comprises a barrier layer
intermediate the principal surface and the multilayer coating;
and
b) the barrier layer comprises a material that dissolves, if at
all, in said solution at said temperature at a rate at least 1000
times lower than the rate of dissolution of the multilayer
coating.
2. The optical element of claim 1, wherein the barrier layer
comprises carbon.
3. The optical element of claim 1, wherein the barrier layer
comprises ruthenium.
4. The optical element of claim 1, wherein the first and second
material layers respectively comprise silicon and molybdenum.
5. The optical element of claim 4, wherein the barrier layer
comprises carbon.
6. In an x-ray imaging system, an optical element which
comprises:
a) a substrate having a principal surface;
b) overlying said surface, a multilayer coating, wherein said
coating comprises plural first and at least second material layers
in alternation, and said coating exhibits a peak reflectivity at
least at one x-ray wavelength; and
c) a release layer that underlies the multilayer coating and
contactingly overlies a supporting material, wherein said release
layer comprises a material that is soluble in at least one etchant
solution at an etching temperature less than 130.degree. C., and
said release layer dissolves in said solution at said temperature
at a rate at least 1000 times higher than the rate of dissolution
of said supporting material,
characterized in that
d) the release layer comprises germanium.
7. The optical element of claim 6, wherein the first and second
material layers respectively comprise silicon and molybdenum.
8. The optical element of claim 6, wherein the substrate comprises
the supporting material.
9. The optical element of claim 6, further comprising a barrier
layer intermediate the principal surface and the release layer,
wherein the barrier layer comprises the supporting material.
10. The optical element of claim 9, wherein the barrier layer
comprises carbon.
11. The optical element of claim 10, wherein the first and second
material layers respectively comprise silicon and molybdenum.
12. The optical element of claim 6, wherein the multilayer coating
is patterned with a plurality of perforations effective for
accelerating the dissolution of the release layer when the optical
element is exposed to the etchant solution, said perforation
pattern occupying no more than about 5% of the total area of the
multilayer coating.
13. The optical element of claim 12, further comprising a patterned
layer of x-ray-absorptive material partially overlying the
multilayer coating, wherein the perforations underlie the
x-ray-absorptive material.
Description
FIELD OF THE INVENTION
The invention relates to reflective optical systems for x rays,
such as x-ray lithographic cameras, in which each optical element
includes a multilayer interference coating on a highly polished
substrate. More particularly, the invention relates to methods for
repairing such systems when the multilayer coatings are rejected
due to damage or nonconformity to specifications, and to additional
coatings that are added to such optical elements to facilitate the
removal of damaged coating layers.
ART BACKGROUND
Semiconductor integrated circuits (ICs) are generally made by a
sequence of steps including one or more exposures of a photoresist
to light through a patterned mask. The diffraction of light imposes
limits on the fineness of detail that can be produced by exposures
of this kind, and as a result, the density of devices that can be
manufactured on a single substrate is limited, in part, by the
choice of exposing wavelength. In order to increase the device
density, practitioners of IC manufacture have begun developing
techniques involving the exposure of special resists to
electromagnetic radiation of extremely short wavelengths, such as
ultraviolet radiation and x radiation.
In one approach, referred to as proximity print x-ray lithography
(PPXRL), hard x rays, having wavelengths of 0.3-5 nm, expose a
substrate through a pattern of x-ray absorbing material (such as
gold or tungsten) supported on a membrane which is transmissive to
the x rays. This method can produce linewidths as small as 20 nm.
However, PPXRL has posed significant technical difficulties. In
particular, it has been difficult to provide an x-ray source of the
required brightness, it has proven difficult to manufacture the
masks, and the supporting membranes are generally somewhat
fragile.
A second approach to x-ray lithography, referred to as soft x-ray
projection lithography (SXPL), is described, e.g., in U.S. Pat. No.
5,003,567, issued on Mar. 26, 1991 to A. M. Hawryluk et al. This
approach takes advantage of recent advances in the field of x-ray
optics. For example, it is now possible to build an x-ray reduction
camera using curved imaging mirrors. These mirrors may be spherical
or aspheric. Each mirror includes a substrate of a material such as
glass-ceramic or sintered glass having a low coefficient of thermal
expansion. The first surface of the substrate is typically ground
to high precision and polished. This surface is then overcoated
with a multilayer coating, typically a periodic multilayer of
material pairs (although groups of more than two alternating
materials may be used). The alternating (e.g., paired) materials
have a large difference in complex index of refraction at the x-ray
wavelength being used. As a consequence of the periodic variation
of complex refractive index, the mirror exhibits high x-ray
reflectivity at certain angles of incidence. A typical x-ray
reduction camera uses a reflective mask consisting of a thin, IC
metallization pattern overlying an x-ray-reflective, multilayer
coating on a polished (flat or curved) substrate surface. The mask
is positioned such that x rays incident thereupon are reflected
from the mask onto a primary mirror, from there onto one or more
secondary mirrors, and from the last secondary mirror onto a wafer
surface coated with an appropriate resist. Image reductions as
great as 20:1 have been achieved in this way. (See e.g., D. W.
Berreman et al., Opt. Lett. 15(1990) 529-531.)
The most promising multilayer coated optical elements (i.e.,
mirrors and masks) include coatings based on metal-silicon
bilayers, in which the metal is, for example, molybdenum, rhodium,
or ruthenium. These coatings are suitable for use at x-ray
wavelengths of 130 .ANG.-300 .ANG., which, in energy, lie below the
silicon L-edge near 125 .ANG. and consequently are relatively
weakly attenuated by the silicon layers. For use at even shorter
wavelengths, multilayer coatings can be designed to take advantage
of the low absorption of other elements such as beryllium, boron,
and carbon.
Metal-silicon multilayer coatings are typically deposited by DC
magnetron sputtering in argon. For molybdenum-silicon coatings, the
total number of bilayers deposited typically ranges from 20 up to
about 60, and the bilayer spacing typically ranges from about 68
.ANG. to about 75 .ANG..
The economic importance of maintaining highly reflective optical
elements is discussed in N. M. Ceglio, et al., "Soft X-Ray
Projection Lithography System Design", OSA Proceedings on
Soft-X-Ray Projection Lithography, 1991, Vol. 12, J. Bokor, ed.,
Optical Society of America (1991) 5-10. As explained therein, the
exposure-limited throughput of a SXPL manufacturing system is very
strongly dependent on the mirror reflectivity. Indeed, a decrease
of mirror reflectivity from 70% to 50% could theoretically increase
the cost of manufactured wafers by 1000%. However, the reflectivity
of multilayer optical elements is expected to decrease over time as
a result of environmental damage and aging effects. In order to
maintain an adequate throughput, operators of a manufacturing
system will have to replace or repair degraded optical
elements.
In addition, it may be necessary to strip, i.e., remove, multilayer
coatings during or immediately after the original fabrication
procedure if, for example, the multilayer coatings have poor
morphology, causing low reflectance, or if they have high
reflectance but at the wrong wavelength.
Expected replacement costs are very high. This point is discussed,
for example, in D. P. Gaines, et al., "Repair of high performance
multilayer coatings", SPIE Vol. 1547 Multilayer Optics for Advanced
X-Ray Applications(1991) 228-238. According to that article, the
optical elements of a diffraction limited system operating at 130
.ANG. must maintain less than 10 .ANG. figure error. Moreover, in
order to have high peak reflectivity, the surface roughness must
generally be less than about 1 .ANG. over spatial wavelengths as
short as about 100 .ANG. (for an x-ray wavelength of 140 .ANG.).
Fabrication of blanks, particularly curved blanks, to these
tolerances is time-consuming and expensive. As a consequence, it is
economically attractive to repair optical elements rather than to
replace them.
Practitioners in the field of x-ray lithography have, in fact,
addressed the problem of repairing multilayer coated optical
elements. For example, the above-cited article by D. P. Gaines, et
al. describes two repair methods. One is a method of overcoating
defective multilayer coatings with new multilayer coatings, and the
other is a method of stripping the entire defective multilayer
coating by etching an underlying release layer. Of these two
methods, the stripping method may be more generally useful, because
overcoating will not cure certain defects. These defects include
increased surface roughness, departure of a mirror from its
required figure, and macroscopic defects such as delamination and
cracking. In such cases, the old multilayer coating must be
stripped and replaced. However, the use of an underlying release
layer may pose problems, because the time required to remove a
multilayer coating by this technique increases rapidly with
increasing surface area.
As noted, the stripping method of the above-cited article calls for
a release layer to be deposited on the substrate before the
reflective multilayer is deposited. To be useful in this regard,
the release layer must be uniform, it must provide an extremely
smooth surface for subsequent deposition thereupon of the
multilayer, and it must generally be etchable in an etching
solution that is relatively harmless to the substrate. (An etchant
is relatively harmless if in the course of ordinary etching times
it will not roughen the substrate beyond acceptable tolerances.)
Gaines, et al., cited above, reports the use of an aluminum release
layer. Aluminum was selected because, according to that article, it
can be uniformly deposited and can be etched in, e.g., a solution
of hydrochloric acid and cupric sulphate without measurable damage
to the surface finish of a silicon-based substrate. However,
aluminum release layers were found to reduce the peak,
normal-incidence, x-ray reflectivities of overlying multilayers by
a significant amount. This was attributed to surface roughness at
spatial wavelengths smaller than 2.5 .mu.m.
At present, there is no assurance that any material will satisfy
all of the requirements for a release layer completely enough to
provide a practical method for repairing optical elements. Yet
another problem with the use of a release layer is that the process
of removing the multilayer coating is relatively time-consuming, as
noted above. This is because in order to attack the release layer,
the etchant must first penetrate the multilayer coating. Because it
is generally dissolved slowly, if at all, by the etchant, the
multilayer coating serves as an effective etch barrier which can
delay, or even prevent, the dissolution of the release layer.
An alternative method of removing the multilayer coating is to etch
it directly. However, this approach has encountered difficulties
because at least three different materials are involved. That is, a
direct etching process must remove both components (e.g., the metal
and silicon components) of the multilayer coating, while
maintaining sufficient selectivity to avoid attacking the
substrate. In general, etchants able to remove both components in
one step have not been found selective enough to avoid damaging the
substrate. On the other hand, highly selective etchants have
generally been found capable of removing only one component or the
other. This makes it necessary to remove the multilayer coating in
many, alternating steps, which is undesirable because it is
relatively time-consuming. Thus, practitioners in the field have
hitherto failed to provide a practical method for directly etching
away the multilayer coating.
SUMMARY OF THE INVENTION
We have discovered that the removal of multilayer coatings by
directly etching them is facilitated by incorporating in the
optical element a barrier layer which protects the substrate from
the etchant. Accordingly, one aspect of the invention is broadly
described as an optical element in an x-ray imaging system. The
element comprises a substrate having a principal surface, and a
multilayer coating overlying the principal surface. The multilayer
coating comprises plural first and at least second material layers
in alternation. This coating exhibits a peak reflectivity at least
at one x-ray wavelength, and it is soluble in at least one etchant
solution at an etching temperature less than 130.degree. C. In
contrast to optical elements of the prior art, the inventive
optical element further comprises a barrier layer intermediate the
principal surface and the multilayer coating. Moreover, the barrier
layer comprises a material that either is insoluble in the etchant
solution at the etching temperature, or it dissolves at least 1000
times more slowly than the multilayer coating.
We have further discovered that a useful release layer can be made
from germanium. Accordingly, in a second aspect, the invention is
broadly described as an optical element comprising a substrate and
a multilayer coating as described above, and further comprising a
release layer that underlies the multilayer coating and
contactingly overlies a supporting material, which may be material
of the substrate, or material of an additional layer that overlies
the substrate, such as a barrier layer. The release layer comprises
a material that is soluble in at least one etchant solution at an
etching temperature less than 130.degree. C., and it dissolves in
that solution at that temperature at least 1000 times faster than
the supporting material. In contrast to release layers of the prior
art, the inventive release layer comprises germanium.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a schematic, cross-sectional diagram of a multilayer
coating on an x-ray-reflective optical element of the prior
art.
FIG. 2 is a schematic, cross-sectional diagram of a multilayer
coating which is underlain by a barrier layer.
FIG. 3 is a schematic, cross-sectional diagram of a multilayer
coating which is underlain by a release layer and a barrier
layer.
FIG. 4 is a schematic, cross-sectional diagram of a reflective
iridium layer which is underlain by a chromium layer and a barrier
layer.
DETAILED DESCRIPTION OF SOME PREFERRED EMBODIMENTS
With reference to FIG. 1, substrates 10 for the optical elements
must be made from a material that can be ground and polished to a
given surface figure with the requisite accuracy and smoothness.
Typical, projected requirements for x-ray mirrors of at least 10 cm
diameter are specified in N. M. Ceglio, et al., cited above. Those
requirements call for a total figure-error budget, per mirror, of
less than 10 .ANG., and a surface roughness less than 2 .ANG. rms
over an appropriate range of spatial frequencies. Moreover, the
substrate material must have a very low coefficient of thermal
expansion over the operating temperature range of an optical
element in an x-ray imaging system (typically, about 20.degree.
C.-30.degree. C.). One currently preferred substrate material is
ZERODUR.RTM., a silica-based glass ceramic (heavily doped with
other oxides) available from Schott Glaswerke of Mainz, Germany.
Pieces of this material can be provided having a thermal expansion
coefficient of 0.0 over the temperature range 0.degree.
C.-50.degree. C., with an error as small as .+-.0.02.times.10.sup.-
6 /K. An alternate substrate material is the ultra-low expansion
glass sold by Corning as ULE.TM., Corning Code 7971. This glass is
made by flame hydrolysis, and is composed of 92.5% silica and 7.5%
titania.
The multilayer coatings of the highest reflectivity that we have so
far been able to achieve have been made by alternately depositing
molybdenum 20 and amorphous silicon 30 layers. The deposition
method is described in D. L. Windt, et al., "Interface
Imperfections in Metal/Si X-Ray Multilayer Structures", O. S. A.
Proc. on Soft-X-Ray Projection Lithography 12, (1991) 82-86. This
method involves DC magnetron sputtering in argon, preferably at an
argon pressure of about 0.27 Pa (2 mTorr). It should be noted in
this regard that a thin layer 40 of intermediate composition tends
to form between the silicon layers and the molybdenum (or other
metal) layers. This interlayer adds a further obstacle to the
conventional removal of the multilayer coating by multiple-step,
selective etching. That is, the interlayer tends to resist etching
both by selective etchants for silicon and by selective etchants
for molybdenum (or other metals). For example, ethylenediamine
pyrocatechol will readily etch silicon at 110.degree. C., but it
will not attack molybdenum or the intermediate layers.
We have found an etchant that, quite surprisingly, will remove all
of the silicon and molybdenum layers of a multilayer coating in a
single etching step, while more slowly attacking a silica-based
glass substrate. This etchant, known to practitioners in the field
of etching as "molybdenum etchant type TFM", and sold by Transene
Co., Inc. of Rowley, Mass., is similar to a formulation described
in T. A. Shankoff, et all, "High Resolution Tungsten Patterning
Using Buffered, Mildly Basic Etching Solutions", J. Electrochem.
Soc.: Solid-State Science and Technology 122 (1975) 294-298. The
etchant is a basic, aqueous solution of potassium ferricyanide. The
standard composition is 0.88 molar potassium ferricyanide with 1.0
molar sodium hydroxide. Additives to this composition may be
useful. For example, inclusion of a surfactant may facilitate
uniform etching. Alkaline hydroxides alternative to sodium
hydroxide are also likely to be effective.
This etchant has not, until now, been known as an effective etchant
for silicon. Indeed, when conventionally applied at or near room
temperature, it will etch silicon, if at all, much more slowly than
it etches molybdenum. Surprisingly, we found that when the etchant
is heated to about 60.degree. C., it will readily remove
silicon-molybdenum multilayer films.
EXAMPLE I
We acquired polished samples of ULE.TM. glass from two different
suppliers, General Optics Corporation and Tropel Corporation. We
believe that these suppliers provided different surface finishes on
the glass samples. These samples were directly overcoated (i.e.,
overcoated without an intervening barrier layer) with
silicon-molybdenum multilayer coatings. These multilayer coatings
exhibited a peak reflectance at a wavelength in the range 130-145
.ANG..
The original Tropel ULE multilayer coatings exhibited peak
reflectivities of about 52%. These multilayer coatings were then
stripped by etching in type TFM etchant for 30 minutes at
60.degree. C., and new multilayer coatings were deposited. The new
multilayer coatings exhibited peak reflectivities of 42%-45%.
The original General Optics ULE multilayer coatings exhibited peak
reflectivities of 63%-64%. These coatings were stripped for 1.25
hours in type TFM etchant at 60.degree. C., and new multilayer
coatings were deposited. Such a new coating exhibited a peak
reflectivity of 63%. A substrate having such a new coating was
again stripped, for 4.25 hours, and then coated with a third
multilayer coating. The third coating exhibited 58%
reflectivity.
Each replacement multilayer coating on a substrate provided by
General Optics exhibited more than 80% of the reflectivity of the
original coating. However, in every case that we observed, the new
multilayer coating was, in fact, somewhat less reflective than the
old multilayer coating. We attribute this change to an increase in
surface roughness of the substrate due to etching. As noted, we
believe that the particular surface finish of the substrate affects
both the initial reflectivity and the degree to which the
reflectivity changes after stripping and recoating.
For the type TFM etchant, an etchant temperature of about
60.degree. C. is preferred because it results in the removal of the
multilayer coating in about one hour. Removal is also possible at
temperatures as low as about 50.degree. C., although etching will
proceed more slowly. The type TFM etchant will not etch the
molybdenum-silicon interlayer material at room temperature. It is
also possible to etch at temperatures as high as about 80.degree.
C. However, it is desirable to protect the substrate from elevated
temperatures insofar as possible. That is, substrate materials
having extremely low coefficients of thermal expansion generally
comprise carefully balanced mixtures of phases. Thermal cycling of
the material may change this balance, resulting in an increased
thermal expansion coefficient. These changes may be brought about
by thermal cycles lying substantially below the melting point, or
the glass point, of the material. For example, the thermal
expansion coefficient of ZERODUR may be changed by cycling the
temperature above 130.degree. C. For this reason, it is often
desirable to keep the etchant temperature below 130.degree. C.,
e.g., at about 100.degree. C. or less, and still more desirable to
keep it as close as practicable to room temperature.
In our experimental tests, we have applied the etchant by
immersion. However, we believe that alternative application
methods, such as vapor exposure, or spraying etchant onto a
spinning substrate, may be advantageous because they facilitate
uniform exposure to constantly refreshed etchant. It should be
noted in this regard that we have observed that agitation increases
the etch rate.
With reference to FIG. 2, we have found a second way to remove the
multilayer coating in a single step without substantial damage to
the substrate surface. This second approach involves an additional
layer 50 of material, to be referred to as a "barrier layer",
formed intermediate the substrate and the multilayer coating 60.
The barrier layer can be deposited, for example, directly on the
principal surface of the substrate, and the multilayer coating can
then be deposited directly upon the barrier layer. The multilayer
coating is etched away in a single step. The presence of the
barrier layer relaxes constraints on the one-step etchant. That is,
unlike the release layer of the prior art, the material of the
barrier layer (i.e., "barrier material") is selected to be
relatively resistant to the etchant. As a consequence, the
substrate is protected from the etchant, and the etchant need not
be harmless to the substrate in the sense described above.
Preferably, the etchant is one that can be used at room
temperature, in order to avoid any temperature cycling of the
substrate. Mixtures of nitric and hydrofluoric acids
(HF--HNO.sub.3) constitute a well-known class of room-temperature
etchants that will remove silicon, metal components such as
molybdenum, and the intermediate compounds that might form between
them in interlayer regions. These etchants will also attack silicon
dioxide, and are therefore harmful to at least some of the
substrate materials presently contemplated. (At low concentrations
of HF in nitric acid, i.e., less than about 1 vol.%, but at least
about 0.05 vol.%, we have found that silicon dioxide is etched
about 30 times more slowly, at room temperature, than the
molybdenum-silicon multilayer. At high HF concentrations, less
selectivity is expected.) However, materials are available that
have the appropriate chemical resistance to serve as barrier
materials.
One such material is carbon, deposited, for example, by sputtering,
chemical vapor deposition (CVD), or evaporation. We have detected
no etching of sputter-deposited carbon films during prolonged
exposure to HF:nitric acid etchant, and none during prolonged
exposure to type TFM etchant. Preferred thickness for carbon
barrier layers are in the range 100-1000 .ANG.. The best
reflectivities are expected for relatively thin layers, e.g. layers
100-200 .ANG. thick. Moreover, we currently believe that such
relatively thin layers will add little stress to the optical
element, relative to the stress contributed by the multilayer
coating. However, the density of pinholes in the barrier layer can
be reduced by making the layer thicker.
After the multilayer coating has been removed by wet etching, the
carbon layer is optionally removed in a dry etching process. To
minimize heating of the substrate, it is preferable to use a
low-temperature plasma etch in, for example, oxygen or ozone. It
should be noted in this regard that it is preferable to avoid the
use of certain heavy, noble metals such as gold as barrier
materials, because gold, for example, tends to form granular layers
that lead to excessive surface roughness.
The barrier layer is readily redeposited before depositing a new
multilayer coating.
EXAMPLE II
Samples of finished ULE glass provided by General Optics
Corporation were coated with multilayer coatings as in Example I.
Each sample had a 200-.ANG. carbon barrier layer sputter-deposited
intermediate the glass surface and a silicon-molybdenum multilayer
coating. The original multilayer coatings exhibited reflectivities
of about 65%. The multilayer coatings were stripped at 60.degree.
C. as in Example I, and redeposited on the original barrier layers.
After stripping for 30 minutes, the new multilayer coatings
exhibited a peak reflectivity (averaged over two samples) of 65%.
The peak reflectivity of a concurrently etched and recoated sample
without a barrier layer was 63%. After stripping for 4.25 hours and
recoating for a second time, the new multilayer coatings exhibited
a peak reflectivity (averaged over two samples) of 63%. The peak
reflectivity of the corresponding sample without a barrier layer
was 58%.
Another material that we believe appropriate as a barrier material
is ruthenium. Ruthenium is relatively insoluble in bases, acids,
and even in aqua regia. Our studies of multilayer coatings based on
ruthenium-silicon bilayers suggest that a ruthenium barrier layer
having adequate surface quality can be made by DC magnetron
sputtering in argon. We expect that even a thin layer, i.e., a
layer about 100 .ANG. thick, will provide an effective barrier
layer against one-step etchants such as HF--HNO.sub.3. Because
ruthenium is difficult to remove at low temperatures, it may be
desirable to use a ruthenium layer as a permanent barrier layer,
which is not stripped off (and replaced) prior to deposition of a
new multilayer coating.
Other materials will also be appropriate as barrier materials, in
at least some cases. By way of illustration, we believe that these
materials include iridium, boron, and rhodium.
In accordance with the preceding discussion, the multilayer coating
is removed by dissolving it in an etchant. According to an
alternate embodiment of the invention described with reference to
FIG. 3, the multilayer coating is not removed solely by attacking
it directly with the etchant. Instead, a release layer is
deposited, preferably intermediate a barrier layer and the
multilayer coating. The multilayer coating is removed, typically in
a single step, by etching the underlying release layer, or by
etching both the multilayer coating and the release layer. The
release layer is readily redeposited before depositing the new
multilayer coating.
The presence of the release layer relaxes constraints on the
material of the multilayer coating, because since it is the release
layer, and not the multilayer coating, that needs to be etchable,
the material of the multilayer coating can be selected without
regard to the feasibility of etching it.
The presence of the barrier layer relaxes constraints on the
one-step etchant. That is, because the barrier layer protects the
substrate, an etchant can be used that would otherwise attack the
substrate. The presence of the barrier layer also relaxes
constraints on the material of the release layer, because it is not
necessary to select a material that is preferentially etched
relative to the substrate.
To accelerate the etching of the release layer, the overlying
multilayer coating can be perforated with a pattern of holes. In an
illustrative perforation method, a layer of photoresist is
lithographically patterned. This patterned layer underlies the
multilayer coating and facilitates the lifting off of multilayer
coating material to form the perforations. We believe that the
performance of an x-ray imaging system will not be unacceptably
degraded, in general, if the area of the holes is no more than
about 5% of the total area of the multilayer coating. One type of
optical element in such a system is a mask, in which reflective
regions are distinguished from non-reflective regions by depositing
patterned, x-ray-absorptive material over the regions of the
multilayer coating that are intended to be non-reflective. In order
to optimize the performance of such an element, it will be
possible, in at least some cases, to confine the perforations to
the non-reflective regions.
We believe that release layers of germanium will be especially
useful. A germanium layer is readily deposited, e.g., by
evaporation, over a bare silica-based glass substrate or over a
carbon barrier layer. A germanium release layer may be useful even
without prior deposition of a barrier layer, because germanium is
rapidly etched in, e.g., room-temperature solutions of sodium
hydroxide, whereas silicon dioxide is only slowly etched under the
same conditions.
One useful material for forming a mirror at wavelengths near 400
.ANG. is iridium. With reference to FIG. 4, we have measured the
reflectivities, for example, of 25-cm-diameter optical elements
made by depositing an 80-.ANG. layer 80 of chromium on a ZERODUR
substrate 90, followed by deposition of a 350-.ANG. layer 100 of
iridium. The chromium layer is desirable because it acts as a
bonding layer which promotes adhesion of the iridium layer. Quite
surprisingly, we have found that the chromium layer is also an
effective release layer for stripping of the iridium layer, when
exposed to type TFM etchant. We found that the etchant readily
penetrated through the iridium layer and attached the chromium,
facilitating removal of the iridium layer. After removing the
iridium layer in this way, we deposited a silicon-molybdenum
multilayer coating over the stripped substrate. This coating
exhibited less x-ray reflectance than was predicted, assuming a
pristine substrate. We attribute this result to surface roughening.
Surface roughening may be prevented through use of an appropriate
barrier layer 110 beneath the chromium layer. It should be noted in
this regard that even if surface roughening is unacceptable for
applications in x-ray optics, the quality of the stripped substrate
surface will be adequate for optical elements operating at longer
wavelengths, such as visible wavelengths.
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