U.S. patent number 3,888,698 [Application Number 05/305,030] was granted by the patent office on 1975-06-10 for infrared-transparent solar cell.
This patent grant is currently assigned to Communications Satellite Corporation. Invention is credited to Denis John Curtin, Joseph Gabriel Haynos, Joseph Lindmayer, Andrew Meulenberg, Jr..
United States Patent |
3,888,698 |
Lindmayer , et al. |
June 10, 1975 |
Infrared-transparent solar cell
Abstract
A semi-conductor solar cell having a back electrode which allows
deep infrared light to pass out of the cell into space. The cell
back electrode is formed in a pattern which covers less than 10
percent of the bottom surface of the cell. An insulating material
having good optical matching characteristics covers the remainder
of the bottom surface.
Inventors: |
Lindmayer; Joseph (Bethesda,
MD), Curtin; Denis John (Rockville, MD), Haynos; Joseph
Gabriel (Gaithersburg, MD), Meulenberg, Jr.; Andrew
(Gaithersburg, MD) |
Assignee: |
Communications Satellite
Corporation (Washington, DC)
|
Family
ID: |
23179007 |
Appl.
No.: |
05/305,030 |
Filed: |
November 9, 1972 |
Current U.S.
Class: |
136/256;
148/DIG.33 |
Current CPC
Class: |
H01L
31/068 (20130101); H01L 31/02167 (20130101); H01L
31/022425 (20130101); Y02E 10/547 (20130101); Y10S
148/033 (20130101) |
Current International
Class: |
H01L
31/0224 (20060101); H01L 31/068 (20060101); H01L
31/06 (20060101); H01L 31/0216 (20060101); H01m
029/00 () |
Field of
Search: |
;136/89 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Douglas; Winston A.
Assistant Examiner: Niebling; John F.
Attorney, Agent or Firm: Sughrue, Rothwell, Mion, Zinn and
Macpeak
Claims
What is claimed is:
1. A solar cell of the type comprised of at least two layers of
semiconductor material of opposite type conductivity defining a p-n
junction, the surface of one layer opposite said p-n junction being
substantially closer to said p-n junction that the surface of said
other layer opposite said p-n junction, the said surface of said
one layer being the upper surface of said solar cell and being
adapted to receive incident light, the said surface of said other
layer being the bottom surface of said solar cell, said upper
surface having an electrode configuration thereon through which
light can pass to said top surface and into said semiconductor
layers, the improvement comprising an electrode on said bottom
surface formed in a pattern over said surface covering less than 10
percent of said bottom surface, and a layer of material covering at
least those portions of said bottom surface not covered by said
electrode, said latter mentioned layer of material being an
electrical insulator and having an optical index of refraction
intermediate that of the optical indeces of refraction for said
semiconductor material and space wherein said electrode on said
bottom surface pattern comprises a plurality of fine lines of metal
interconnected by other metal lines terminating in larger metallic
areas adapted for connecting said back electrode to external
circuitry.
2. A solar cell as claimed in claim 1 wherein said plurality of
fine lines are substantially parallel and extend across one
dimension of said bottom surface, said lines being between 1 to 20
microns in width and having a separation of about 0.016
centimeters.
3. A solar cell as claimed in claim 2 wherein the electrode on said
bottom surface is formed of aluminum and silver.
4. A solar cell as claimed in claim 3 wherein the said layer of
semiconductor material which defines said bottom surface has a
region adjacent said bottom surface which has a higher conductivity
than the remainder of said semiconductor layer.
5. A solar cell as claimed in claim 4 wherein said solar cell
further comprises a cover slide on said layer of insulating
material, said cover slide being made of a material capable of
protecting the cell from radiation damage and having an index of
refraction between that of said insulator layer and space.
6. A solar cell as claimed in claim 5 wherein said cover slide is
quartz.
7. A solar cell as claimed in claim 1 wherein the electrode on said
bottom surface covers less than 5 percent of said bottom
surface.
8. A solar cell as claimed in claim 1 wherein said electrical
insulator is a material having an optical index of refraction
between 2.0 and 2.5.
9. A solar cell as claimed in claim 3 wherein said electrical
insulator is an oxide of titanium.
10. A solar cell as claimed in claim 9 wherein said semiconductor
layers are silicon material.
11. A solar cell as claimed in claim 6 wherein said electrical
insulator is a material having an optical index of refraction
between 2.0 and 2.5.
12. A solar cell as claimed in claim 11 wherein said electrical
insulator is an oxide of titanium.
13. A solar cell as claimed in claim 12 wherein said semiconductor
layers are silicon material.
14. A solar cell as claimed in claim 13 wherein the electrode on
said bottom surface covers less than 5 percent of said bottom
surface.
Description
BACKGROUND OF THE INVENTION
The present invention is in the field of solid state photovoltaic
cells for use in converting solar energy into electrical
energy.
In state of the art solar cells, a semiconductor body is provided
having a p-n junction as close to the top or light receiving
surface as is practical. Silicon is the most widely used material
for solar cells but other semiconductor solar cells are also known.
Electrodes are attached to the top and bottom surfaces of the
semiconductor device to enable connection of the photovoltage
created to external circuitry. Optical coatings are also used on
the top surface to provide desired optical matching characteristics
between the space/optical coating interface and the optical
coating/semiconductor interface. The optical coating is selected to
maximize passage therethrough of useful wavelength light and to
minimize passage therethrough of non-useful wavelength light.
The wavelength of light which will be useful to generate
electron/hole pairs and therefore generate a photovoltage depends
upon the band gap of the semiconductor material used. As an
example, present silicon solar cells are responsive to sunlight in
the region of 0.4 to 1.1 microns wavelength. The sun's energy below
0.4 microns and above 1.1 microns is usually either reflected
before reaching the cells; e.g., by using ultraviolet filters as
the optical coating, or absorbed by the cell back electrode without
generating carriers. Typically, the wavelengths absorbed by the
back electrode are those having photon energy or wavelength above
the maximum useful wavelength, e.g., 1.1 microns for silicon. This
deep infrared light serves no useful purpose and raises the
equilibrium temperature of the cells. Additionally a significant
portion of the current generating photons has more energy than
required. This excess energy also adds to the cell temperature.
The front electrode is usually formed in a grid like arrangement to
enable light to pass into the top surface of the semiconductor.
Competing factors operate in the selection of a proper front
electrode pattern. On the one hand it is desirable to have the
electrode cover a minimum of the top surface. On the other hand, it
is desirable to have a portion of the electrode near every surface
point thereby reducing the lateral distance an electron must travel
and enabling one to place the p-n junction very near the surface.
It should be noted that a p-n junction near the surface is an
advantage from the standpoint of useable electron/hole pairs
created but is a disadvantage from the standpoint of increased
lateral resistance to electron movement. A preferred pattern for
the front electrode is described in a copending application of
Lindmayer Ser. No. 184,393 now Pat. No. 3,811,954, entitled "Fine
Geometry Solar Cell," filed on Sept. 28, 1971 and assigned to the
assignee herein.
The back electrode in state of the art cells typically covers the
entire bottom surface of the semiconductor layer. This provides
good conduction or collection of the photogenerated carriers. Since
the solar energy impinges on the front surface it was believed
suitable to have a back electrode covering the entire back
surface.
In using deployed solar cell arrays, the problem of the cell
equilibrium temperature becomes quite significant. Deployed solar
cell arrays as opposed to body mounted solar cell arrays are held
away from the body, e.g., satellite, and oriented toward the source
of the solar radiation. The typical deployed solar cell array has
very little thermal mass and is an advantage over body mounted
arrays because the former are oriented at normal or near normal
incidence to the sun. It has been discovered that the undesirable
side-effect of this arrangement is a dramatic increase in the array
operating temperature from 10.degree. to 20.degree.C, to
60.degree.C or more, depending on factors such as the orbit of a
satellite to which the array is attached. Since the power generated
by solar cells decreases approximately 0.4 - 0.5 percent per
.degree.C in this range, the overall effect is to drop the
available power substantially.
SUMMARY OF THE INVENTION
In accordance with the present invention, the problem of decreased
power due to increased thermal temperature of solar arrays is
alleviated by providing a cell having back electrodes which cover
less than 10 percent of the back surface of the cell and preferably
less than 5 percent of the back surface of the cell.
Photolithographic techniques are used to place an electrode
comprising extremely fine lines of metal separated by short
distances onto the back surface. The electrode allows deep infrared
to pass through the non-electroded surface areas and out into
space. The amount of deep infrared absorbed by the electrode is
substantially reduced and thus the thermal equilibrium temperature
of the cells in a deployed array is not appreciably increased, when
compared with prior art cells on the body mounted array.
The semiconductor material adjacent the bottom surface may be more
heavily doped than the bulk of the bottom semiconductor layer to
increase the lateral surface conductivity but this added feature is
not necessary because the relatively large bulk of the bottom
semiconductor layer is sufficient to provide good lateral
conductivity.
At least the exposed areas of the bottom surface are covered with
an insulating layer, e.g., S.sub.i O.sub.x, T.sub.i O.sub.x, which
is optimized to achieve maximum emission of the deep infrared
toward space.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is an exaggerated side view of a solar cell showing the
relationship of the various layers of the cell.
FIG. 2 is an exaggerated side view of part of the solar cell
showing the relationship between the back electrode thin metallic
lines and the oxide coating.
FIGS. 3 and 4 are examples of preferred embodiments of the pattern
of the back electrode.
DETAILED DESCRIPTION OF THE INVENTION
As illustrated generally in FIG. 1, a solar cell 10 is illustrated
having semiconductor layers 12 and 14 which may be silicon or other
semiconductor material. The semiconductor material is doped in a
well known manner to provide an n-type layer 12 and a p-type layer
14, which together define a p-n junction 16. The upper surface of
the n-type layer 12 is exposed to light 32 which enters the
semiconductor body through various other layers to the
described.
The other layers on the top surface are the top electrode 18, an
oxide coating 20 and a cover slide 22. The top electrode does not
completely cover the top surface of the semiconductor but is formed
in a pattern to allow much of the semiconductor surface to be
exposed to the light. The oxide coating may or may not be directly
over the metal pattern of the electrode but is over the exposed
areas of the semiconductor. The cover slide 22 protects the cell
against harmful radiation. The covering layers are chosen in a well
known manner to maximize the transmission therethrough of light
wavelength in the useful range and to maximize the reflection of
light wave lengths in the non-useful range. The upper portion of
the cell, just described, is not a novel feature of the present
invention.
On the bottom surface there is provided an electrode 24. In
conventional devices the latter electrode completely covers the
back side and absorbs the deep infrared light which passes through
the semiconductor layers. In accordance with the present invention
the back electrode has a pattern of very fine lines which, on the
one hand leaves most of the back surface uncovered by metal, and on
the other hand provides metal extremely close to every point on the
surface. This can be accomplished by laying down an electrode
having a pattern such as shown in FIGS. 3 or 4. As an example, for
a cell having a square back surface area of 2 cm. by 2 cm., a
metallic electrode having a pattern such as is shown in FIGS. 3 or
4 may comprise 60 metallic lines, each being only 1 to 20 microns
in width and extending substantially entirely across the back
surface, separated 0.016 centimeters apart. Two additional fine
lines 42 are provided to connect the multiple fine lines to a
larger metallic region 44. The latter region is included to enable
easy connection of the bottom electrode to external circuits. The
large region 44 shown in FIG. 3 may be dispensed with and two
smaller regions 45, as shown in FIG. 4, may be a part of the
pattern. The pattern of FIG. 4 will allow an even larger portion of
the back surface to be uncovered by metal but will be sufficient
for connecting the electrode to external circuitry.
Electrode patterns of the type described can be placed on the back
surface to leave 90 to 97 percent of the back surface uncovered by
the electrode. In order to maximize the emission into space of the
deep infrared wavelengths reaching the back surface, it is
necessary to improve the optical matching characteristics at the
interfaces. Semiconductors have a relatively high index of
refraction, e.g., the index of refraction of silicon is about 4.0,
whereas the index of refraction of space is 1.0. Generally, the
greater the difference in indeces of refraction of two mediums
forming an interface, the greater will be the percentage of
incident light that is reflected. When the difference in indeces of
refraction is relatively large, as it would be at an interface
between silicon and space, the system is said to have poor optical
matching characteristics.
In accordance with the present invention, the optical matching
characteristics are improved by including at least one additional
layer between the semiconductor and space which has an index of
refraction between that for the semiconductor and space. The
additional layer or layers also serve other important functions.
Referring again to FIG. 1, at least the exposed areas of the back
surface are covered by an oxide insulating coating 26 which
preferably has an index of refraction between 2.0 and 2.5. One such
suitable oxide coating is T.sub.i O.sub.x, which has an index of
refraction of about 2.4. The latter coating improves the optical
match and thereby increases the percentage of deep infrared which
is emitted into space. The coating also provides the necessary
insulating function for the semiconductor.
Additionally, in space applications, it is desirable to protect the
cell from radiation damage. This can be accommplished by placing a
conventional quartz cover slide 28 on the oxide layer 26. The
quartz cover slide further improves the optical matching
characteristics because it has an index of refraction of 1.46,
which is between that of T.sub.i O.sub.x and space. The quartz
cover slide could be dispensed with if the oxide coating is made
thick enough to protect the cell from radiation damage. However,
difficult technological problems are presently encountered in
attempting to make suitable oxide layers thick enough to protect
againt radiation damage.
The novel device described may be fabricated by using conventional
techniques. An example is to place a photoresist on the bottom
surface and expose the photoresist to light through a mask which is
a negative of the pattern shown in FIGS. 3 and 4. The exposed
portions of the photoresist are removed to expose a semiconductor
surface area having the same pattern as shown in FIGS. 3 and 4. A
layer of metal is deposited onto the exposed surface/photoresist
and adheres to the semiconductor surface. The remaining photoresist
is removed in a conventional manner thereby also removing those
portions of the metal layer overlying the photoresist. The
remaining metal is the back electrode and has the form shown in
FIGS. 3 and 4. The metal may be a combination of aluminum and
silver. The oxide is then deposited onto the back surface having
the patterned electrode thereon. A cover slide cut from a thin
sheet of quartz may then be placed over the oxide.
As an alternative, the oxide may be deposited or grown first
followed by etching the desired metal pattern in the oxide, and
using known techniques for placing the metal on the surface regions
exposed by etching away the oxide. In this case, the relation
between the oxide 26 and the metal 24 will be as illustrated in
FIG. 2.
As a further alternative, the p-type layer 14, as shown in FIG. 2,
may be heavily doped near the bottom surface to create a p+ layer
30 to improve the lateral conductivity near the surface. Although
the layer 30 is shown in FIG. 2, it should be apparent that the p+
layer may be created whether the oxide is deposited before or after
the metal.
* * * * *