U.S. patent number 3,886,503 [Application Number 05/437,602] was granted by the patent office on 1975-05-27 for device for storing high frequency signals.
This patent grant is currently assigned to Thomson-CSF. Invention is credited to Alain Bert, Gerard Kantorowicz.
United States Patent |
3,886,503 |
Bert , et al. |
May 27, 1975 |
Device for storing high frequency signals
Abstract
A memory device including a piezoelectric delay line along the
surface of which travels acoustic waves to be put into memory; an
electron gun which sweeps the work surface of the line with a beam
of electrons for recording or reading out the wave; and in which
this work surface is covered at least in part by a layer of a
highly resistive material.
Inventors: |
Bert; Alain (Paris,
FR), Kantorowicz; Gerard (Paris, FR) |
Assignee: |
Thomson-CSF (Paris,
FR)
|
Family
ID: |
23737115 |
Appl.
No.: |
05/437,602 |
Filed: |
January 28, 1974 |
Current U.S.
Class: |
333/150;
310/313R; 365/157; 310/313B; 315/39.3 |
Current CPC
Class: |
G11C
13/047 (20130101); G10K 11/36 (20130101); H03H
9/02787 (20130101); H03H 9/42 (20130101); G11C
8/005 (20130101); H03H 9/02645 (20130101) |
Current International
Class: |
G10K
11/36 (20060101); G11C 13/04 (20060101); H03H
9/00 (20060101); H03H 9/02 (20060101); H03H
9/42 (20060101); G10K 11/00 (20060101); G11C
8/00 (20060101); H03h 009/30 (); G11c 021/02 ();
G11c 027/00 () |
Field of
Search: |
;333/3R ;330/42,43,44
;315/39.3,3,8.5 ;340/173R,173CR ;310/8,8.1,8.2,8.3 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Lawrence; James W.
Assistant Examiner: Nussbaum; Marvin
Attorney, Agent or Firm: Plottel, Esq.; Roland
Claims
We claim:
1. A device for storing travelling surface waves comprising, inside
a vacuum tight enclosure; a delay line of strongly piezoelectric
material having transducers mounted thereon and separated from one
another, for transducing high frequency electric signals into
acoustic waves and vice-versa, said acoustic waves propagating
along a work surface of said line between said transducers; and an
electron gun for directing a beam of primary electrons toward said
work surface; said work surface of said delay line being covered
with a thin layer of electrically insulating material; and said
thin layer having deposited on it a plurality of bands parallel to
the direction of acoustic wave travel along said line, said bands
being made of a material having a high coefficient of secondary
emission.
2. A device fo storing travelling surface waves comprising, inside
a vacuum tight enclosure; a delay line of strongly piezoelectric
material having transducers mounted thereon and separated from one
another, for transducing high-frequency-electric signals into
acoustic waves and vice-versa, said acoustic waves propagating
along a work surface of said line between said transducers; and an
electron gun for directing a beam of primary electrons toward said
work surface; said work surface of said delay line being covered
with a thin layer of electrically insulating material; and said
thin layer having deposited on it a plurality of disks made of a
material having a high coefficient of secondary emission.
Description
The invention relates to memory devices which record high frequency
signals through the use of acoustic waves traveling along a work
surface.
Devices of this type are described in applicants' U.S. Pat. No.
3,750,043 filed in the U.S. on July 13, 1971 and in U.S. Pat.
Application Ser. No. 427,572, filed on Dec. 26, 1973, both of which
are assigned to the same assignee as the present application.
The memory devices described in these patents have vacuum-tight
enclosures, each containing (1) a delaying structure, such as a
piezoelectric delay line, along which travel the acoustic waves
which are to be stored in memory; and (2) an electron gun which
produces a beam of electrons that strikes the surface of the line
along which the waves travel.
The delay line typically is an elongated block of an insulating
piezoelectric material capable of emitting a relatively large
number of secondary electrons when struck by primary electrons from
the electron gun. Transducers at each end of the delay line convert
high frequency electric signals into the acoustic surface waves and
vice-versa.
During a read-in or a write-out, the electron gun produces a narrow
beam of primary electrons of high intensity and short duration. In
one type of memory device, the beam strikes the entire work surface
of the delay line simultaneously (i.e., all of the surface included
between the two transducers). In another device a very narrow beam
sweeps the work surface of the line.
In both cases, when the work surface of the line having the
acoustic wave traveling thereon, is swept by a beam of primary
electrons; then an electric surface field produced by the wave acts
on the distribution of secondary electrons produced on the work
surface. This results in a modulation of the density of the charges
deposited on the work surface, thereby creating an electrostatic
image of the wave. It can be read-out (and erased) with a
subsequent sweep of the work surface with a beam of primary
electrons. A more detailed description can be found by referring to
the patents cited above.
It appears to be desirable for the delay line to have the following
characteristics:
IT SHOULD BE STRONGLY PIEZOELECTRIC, IN ORDER FOR THE WAVE TO STORE
A HIGH LEVEL OF ELECTRICAL ENERGY.
IT SHOULD HAVE A WEAK DIELECTRIC CONSTANT, SO THAT THE NUMBER OF
CHARGES WHICH MUST BE DEPOSITED TO REGISTER A GIVEN SIGNAL CAN BE
KEPT AS LOW AS POSSIBLE.
IT SHOULD HAVE A HIGH COEFFICIENT OF SECONDARY EMISSIONS, IN ORDER
TO MINIMIZE THE DENSITY REQUIRED FOR THE INITIAL CURRENT.
IT SHOULD HAVE A VERY HIGH SURFACE RESISTIVITY, IN ORDER TO STORE
THE RECORDED SIGNAL FOR AS LONG AS POSSIBLE.
Generally speaking, no single material will fulfill all these
requirements. Quartz, for example, has a high resistivity and a low
piezoelectricity. On the other hand, lithium niobate is highly
piezoelectric but not as insulating as quartz.
One of the objectives of this invention is to produce memory
devices with good characteristics, most notably the ability to
store information over a long period of time without affecting the
quality of the information recorded. This can be accomplished by
the use of particular types of delay lines.
The delay lines used in the devices of this invention are composed
of substrates chosen for their strong piezoelectric properties, the
work surfaces of which are covered by a layer of material having
good insulating properties but no piezoelectricity.
In order further to increase the capacity of these devices, the
coefficient of the secondary emission of the outer surface of the
layer of insulating material can be raised by adding to this
surface another layer, which may or may not be continuous, and
which is composed of a material with a high secondary emission
coefficient.
Other objectives, charateristics and results of this invention will
become clear from the following description offered as a
non-limiting example and illustrated by the accompanying
figures:
FIG. 1, is a schematic diagram of a section of an improved memory
device according to the invention.
FIGS. 2 and 3, are schematic diagrams in perspective of different
delay lines used in memory devices according to the invention.
FIG. 1 is a schematic representation of a memory device having a
metallic vacuum-tight enclosure 1 containing an electron gun which
is shown schematically having a cathode 2, for emitting electrons,
an electrode 3 which controls the intensity of the electron current
emitted by the cathode, and an accelerating electrode 4.
During read-in or write-out, this electron gun sweeps a delay line,
which includes a substrate 5, chosen for its strong piezoelectric
properties. The material for this substrate can be niobate of
lithium or a strongly piezoelectric semiconductor such as a cadmium
sulphur compound. These semiconductors have an advantage over
lithium niobate of having a weaker dielectric constant. On the
other hand, the strongly piezoelectric substrates such as lithium
niobate are generally not good insulators.
A thin layer 6 of a highly resistive non-piezoelectric material,
such as silicon, covers a work surface of substrate 5; this is the
surface between transducers 7 and 8 along which the acoustic waves
travel, and which is swept by primary electrons from the electron
gun. The electrostatic image of the wave produced during a read-in
can be retained for a much longer period of time, because the
insulating layer 6 prevents the migration of charges along the work
surface of the line.
In order to improve even further the qualities of the delay line in
this device, insulating layer 6 can be covered with a thin layer
(not shown in FIG. 1) of material having a high coefficient of
secondary emissions, such as magnesium oxide.
This layer with this high secondary emission coefficient can be
continuous, thereby completely covering layer 6. In that case, it
should be made of a material having good insulating properties.
This additional layer may also, be discontinuous as shown in FIGS.
2 and 3. These figures represent, in schematic fashion, delay lines
that can be used in memory devices such as the one described in
FIG. 1.
In FIG. 2, insulating layer 6, which covers the work surface of
substrate 5, is itself covered in part with bands 10 parallel to
the direction of wave travel, and of a material having a high
coefficient of secondary emissions, e.g. magnesium oxide. If the
material of these bands 10 is also a good insulator, then the
electrostatic image of the acoustic wave will cover the entire work
surface of the line. If the material is not a very good insulator,
then the electrostatic image will be recorded only along those
areas of insulating surface 6 not covered by bands 10.
In FIG. 3, the layer of material with a high coefficient of
secondary emissions is composed of disks 11 arranged along the
insulating layer 6. The advantage of the disks is that, so long as
these disks are smaller than the wave length of the acoustic wave,
the charges will remain on the work surface where they were
produced and the electrostatic image of the wave will remain along
the entire work surface of the delay line, even if the material
composing the disks is not a good insulator.
* * * * *