U.S. patent number 3,875,413 [Application Number 05/404,845] was granted by the patent office on 1975-04-01 for infrared radiation source.
This patent grant is currently assigned to Hewlett-Packard Company. Invention is credited to John A. Bridgham.
United States Patent |
3,875,413 |
Bridgham |
April 1, 1975 |
Infrared radiation source
Abstract
A source of infrared radiation is provided which includes a thin
film resistive heater of high emissivity evaporated onto a
substrate. The thin film heater is positioned between a pair of
thin metal elements on the substrate. The resulting structure
provides a well-defined, mechanically stable source. In one
embodiment of the invention, the resistive element is coated with
an antireflecting layer to enhance its emissivity.
Inventors: |
Bridgham; John A. (Palo Alto,
CA) |
Assignee: |
Hewlett-Packard Company (Palo
Alto, CA)
|
Family
ID: |
23601283 |
Appl.
No.: |
05/404,845 |
Filed: |
October 9, 1973 |
Current U.S.
Class: |
250/492.1;
219/553; 359/580; 392/426 |
Current CPC
Class: |
H05B
3/00 (20130101); G01J 3/108 (20130101); H05B
3/009 (20130101); H05B 3/26 (20130101); H05B
2203/017 (20130101); H05B 2203/013 (20130101); H05B
2203/011 (20130101); H05B 2203/032 (20130101) |
Current International
Class: |
G01J
3/10 (20060101); G01J 3/00 (20060101); H05B
3/22 (20060101); H05B 3/00 (20060101); H05B
3/26 (20060101); H05b 001/02 () |
Field of
Search: |
;250/503,504,492,493
;219/354,553 ;350/164 |
References Cited
[Referenced By]
U.S. Patent Documents
Primary Examiner: Lawrence; James W.
Assistant Examiner: Church; C. E.
Attorney, Agent or Firm: Grubman; Ronald E.
Claims
I claim:
1. An infrared radiation source comprising:
a substrate;
a pair of metal strips of emissivity less than about 0.2 in the
infrared region positioned on one side of the substrate;
a thin film resistive heater of emissivity greater than about 0.5
in the infrared region positioned on the substrate in between the
pair of metal strips to serve as a radiation source area bounded by
the metal strips; and
input and output leads electrically interconnected with the pair of
metal strips for conducting an electrical current through the
source.
2. An infrared radiation source as in claim 1 wherein the thin film
resistive heater comprises a layer of Cr.sub.3 Si deposited onto
the substrate.
3. An infrared radiation source as in claim 2 wherein the substrate
material is selected from the group consisting of sapphire and
Y.sub.2 O.sub.3 and quartz.
4. An infrared radiation source as in claim 2 including an
antireflecting layer on the Cr.sub.3 Si layer for increasing the
effective emissivity of the heater.
5. An infrared radiation source as in claim 4 wherein the
antireflecting layer is of TiO.sub.2.
6. An infrared radiation source as in claim 5 including another
metal strip on another side of the substrate opposite the side on
which the resistive heater is deposited, for preventing spurious
radiation from said other side of the substrate.
7. An infrared radiation source as in claim 6 wherein the substrate
is mounted in a housing including a base and a reflecting surface
mounted on the base, the reflecting surface for reflecting and
focusing infrared radiation from the thin film resistive
heater.
8. An infrared radiation source as in claim 7 wherein:
the housing is of a circular cross section;
the reflecting surface is an eliptical mirror; and
the substrate and thin film resistive heater are mounted in spaced
relation with the reflecting surface.
9. An infrared radiation source as in claim 7 wherein:
the housing is of a circular cross section;
the reflecting surface is a parabolic mirror; and
the substrate and the thin film resistive heater are mounted in
spaced relation with the reflecting surface.
Description
BACKGROUND OF THE INVENTION
This invention is concerned generally with radiation sources, and
more particularly with a new planar source of infrared
radiation.
As more small, portable instruments using infrared sources are
being designed, it is becoming of importance to have infrared
sources of high overall efficiency. Various infrared sources are
presently known. One common source is a Nernst glower, which uses a
silicon carbide filament. These glowers have been found to be
difficult to start-up and operate, while the typical physical
configuration does not provide a good point source for applications
requiring such.
Tungsten in the shape of a coil filament is also used to provide
infrared radiation. For use in systems which require good imaging
and low noise, however, tungsten coil filaments are not adequate.
Because of the physical configuration of the coil, the image does
not consist of a solid area of radiation, but rather consists of
areas of radiation intermingled with areas in which not radiation
is present. The image is said to have a poor "fill factor."
Furthermore, a system employing a coil filament is very susceptible
to errors induced by mechanical movement or jarring of the system.
When jarred, the coil filament tends to jiggle resulting in
spurious noise in the detected radiation. Also, the tungsten
material typically used in coil filaments has a comparatively low
emissivity (about 0.15) in the infrared region, and is therefore
not well suited for use as an infrared source.
In the prior art, some of the problems of a coil filament have been
avoided by using a ribbon of tungsten as a source. A ribbon,
however, does not eliminate the problems of using low emissivity
tungsten as an infrared source. Furthermore, because of the low
resistivity of tungsten, it is difficult to provide a small
well-defined source with a tungsten ribbon, there being no
discontinuity between source and leads. If, however, only a small
section of tungsten is used as a source in conjunction with thin
wire current leads, most of the electrical power is then dissipated
in the leads rather than in the low resistance source, so that the
source is very inefficient.
Another radiation source which is of current interest is the light
emitting diode (LED). Present LED's are very low power devices
which are not suitable for all uses.
SUMMARY OF THE INVENTION
According to the illustrated preferred embodiment, the present
invention provides a small, well-defined source of infrared
radiation which can be easily and efficiently imaged through an
optical system. The invention includes a thin film resistive heater
of a high emissivity substance such as Cr.sub.3 Si evaporated onto
a substrate. The resistive heater is confined to a small area
between a pair of metal elements on the substrate. The high
emissivity of the thin film heater and the low thermal conductivity
of the substrate material each contribute to providing a highly
efficient source.
The resistive heater of high emissivity is positioned between, and
immediately adjacent to, a pair of metal elements of low
resistivity and emissivity to provide a well-defined source which
is particularly suited to imaging with mirror optics. The source is
planar, and may therefore be easily imaged. Furthermore the device
is mechanically stable, so that the source will not jiggle in
response to a shock.
In accordance with one of the illustrated preferred embodiments,
the resistive element is coated with an antireflecting layer to
enhance its emissivity. Sources built in accordance with this
embodiment have yielded an efficiency of about 0.2% with a
bandwidth of about 5% in the infrared region.
DESCRIPTION OF THE DRAWINGS
FIG. 1 is a radiation source in accordance with an embodiment of
the invention.
FIG. 2 shows a portion of a light source in accordance with another
embodiment of the invention including an antireflecting layer.
FIG. 3 illustrates a light source in a package including a
reflecting surface.
DESCRIPTION OF THE INVENTION
In FIG. 1 there is illustrated a substrate 11 of low thermal
conductivity, e.g. conductivity in the range 0.02 to 0.08
watt/cm.degree.K. Several suitable materials are thin sapphire,
Y.sub.2 O.sub.3 and quartz. The dimensions of substrate 11 may be
chosen in accordance with a desired size of the light source; e.g.
operating devices have been built in which the dimensions of
substrate 11 are about 0.150 by 0.020 by 0.002 inch. Positioned
centrally with respect to the long dimensions of substrate 11 is a
radiation source area 13 which comprises a region of a highly
resistive, highly emissive material, emissivity greater than about
0.5 being preferred. Preferably, source area 13 consists of
Cr.sub.3 Si evaporated onto substrate 11 to a depth of about
1-2.mu.. In the illustrated embodiment, source area 13 is a 0.02
.times. 0.02 inch square having a resistance of about 100.OMEGA..
In the infrared radiation region of interest, about 4.mu.
wavelength, the emissivity of Cr.sub.3 Si is about 0.5. Immediately
adjacent to both sides of source area 13 are a pair of metallic
conductors 15 which are preferably of a low emissivity relative to
that of the Cr.sub.3 Si in the infrared region. Platinum, which has
an emissivity in the infrared of about 0.1 is suitable, but other
metals such as gold may also be used. Each metallic conductor 15
includes a portion 17 which overlaps a small area of source 13.
This configuration helps to provide a well defined source region. A
pair of leads 19, of a material such as gold, are bonded to metal
layers 15 to serve as input and output leads supplying electrical
power to source area 13. As will be explained further below, it is
desirable that spurious radiation not be emitted from the device,
as from the bottom of substrate 11. To prevent spurious radiation
from being emitted, an additional metal layer 21 is deposited onto
the bottom of substrate 11.
In operation, current leads 19 are connected to a source which
provides sufficient current to heat thin film resistive heater 13
to a temperature of about 700.degree.C. For the 100.OMEGA. square
of Cr.sub.3 Si described above, a current in the range of about
50-70 ma has been found to provide adequate heating. Spurious
radiation from metal layer 15 is kept to a minimum by using a
substrate which is of very low thermal conductivity, thereby
ensuring that only small amounts of heat are conducted away from
source 13 to metal plates 15 via substrate 11. Additionally, the
use of low emissivity metals such as platinum for metal plates 15
adjacent to resistive heater 13 further reduces emission from
layers 15, so that the region from which radiation is emitted is
spatially well defined.
FIG. 2 again shows a portion of substrate 11, and a portion of both
metal layers 15 including raised portions 17. Also shown is thin
film resistive heater 13 positioned adjacent to metal layers 15.
There is also illustrated an antireflecting layer 23 of a material
such as TiO.sub.2, thickness of about 0.44.mu., which is in contact
with resistive heater 13. Antireflecting layer 23 serves to
effectively increase the emissivity of the infrared source.
Preferably, the material of antireflecting layer 23 is selected so
that its index of refraction is approximately equal to the square
root of the index of refraction of the material of heater 13.
In FIG. 3, there is illustrated source strip 11 encapsulated in an
optical package 25. Package 25 includes a base 27 on which is
mounted a reflecting surface 29. Reflecting surface 29 is
preferably an eliptical or parabolic reflector of a solid piece of
metal such as aluminum. A pair of metal posts 31 extend through
base 27 and reflector 29 and are connected to leads 19 to provide
electrical power to strip source 10. Infrared radiation emitted
from source area 13 is directed to reflecting surface 29, from
which it is reflected out of package 25 to form a magnified image
(not shown). It may be seen from this illustration that light
emitted from the side of source 13 away from reflector 29 would be
directed toward the right in the figure, and thereby degrade the
image produced by rays reflected from reflector 29. As was
described above in connection with FIG. 1, a metallic surface is
deposited on the back (right side in the figure) of substrate 11 to
prevent the occurrence of such spurious radiation. Preferably,
package 25 is hermetically sealed to enclose an inert atmosphere
such as nitrogen or argon, to prolong the life of the filament.
* * * * *