U.S. patent number 3,864,239 [Application Number 05/462,705] was granted by the patent office on 1975-02-04 for multitarget sequential sputtering apparatus.
Invention is credited to James C. Administrator of the National Aeronautics and Space Fletcher, N/A, Rindge Shima.
United States Patent |
3,864,239 |
Fletcher , et al. |
February 4, 1975 |
Multitarget sequential sputtering apparatus
Abstract
A sputtering apparatus includes a single cathode on which a
plurality of targets of different materials are supported, with a
rotatable anode, supporting a substrate and/or substrates, spaced
apart from the cathode in a chamber containing an inert gas at a
selected pressure. A potential difference is applied between the
cathode and anode to produce a plasma for each target, which is
sputtered by accelerated ions within the plasma. Apertured plates
and shields are positioned between the targets and the anode to
effectively separate the plasmas into separate columns. The
sputtered material from each target having access to the
substrate/substrates only through that target's column. The shields
are biasable by a voltage gradient to sumultaneously and equally
control the current in each plasma. Each column has a separate bias
ring associated therewith, which is biasable to a separate voltage
to individually control the plasma in its associated column. Also
included are movable shutters. The various parts are assembled so
that when the substrate is aligned with any target only sputtered
material from that target reaches the substrate through the plasma
column and from no other target. As the anode is rotated from the
first target to align with the second target, during the transition
the deposition takes place continuously, first from the first
target, followed by deposition from both targets and finally from
the second target, thereby controlling the interface structure and
preventing any inter-layer contamination and providing a near
perfect controlled interface.
Inventors: |
Fletcher; James C. Administrator of
the National Aeronautics and Space (N/A), N/A (Santa
Monica, CA), Shima; Rindge |
Family
ID: |
23837464 |
Appl.
No.: |
05/462,705 |
Filed: |
April 22, 1974 |
Current U.S.
Class: |
204/298.06;
204/298.11; 204/298.26; 204/192.12 |
Current CPC
Class: |
C23C
14/3464 (20130101) |
Current International
Class: |
C23C
14/34 (20060101); C23c 015/00 () |
Field of
Search: |
;204/192,298 |
References Cited
[Referenced By]
U.S. Patent Documents
|
|
|
3528906 |
September 1970 |
Cash, Jr. et al. |
3796649 |
March 1974 |
Lamont, Jr. et al. |
3803019 |
April 1974 |
Robison et al. |
|
Primary Examiner: Vertiz; Oscar A.
Assistant Examiner: Langel; Wayne A.
Attorney, Agent or Firm: Mott; Monte F. Grifka; Wilfred
Manning; John R.
Claims
What is claimed is:
1. A sputtering apparatus comprising:
a chamber for containing an inert gas at a selected pressure;
a single stationary cathode in said chamber said cathode having
means to support a plurality of different target materials
connected thereto;
a rotatable anode in said chamber spaced apart from said cathode
along a chamber axis and having selected area means for supporting
a plurality of substrates;
a plurality of spaced apart elements supported between said anode
and said cathode, each element defining a plurality of apertures,
whereby each of said targets is exposable through a different set
of apertures of said plates to a selected area of said anode
aligned with the target-material along a different axis parallel to
said chamber axis;
power means for applying a potential difference across said anode
and cathode to ionize said gas to form plasma containing gas ions
and electrons, said ions striking said targets to dislodge neutral
material particles therefrom, at least some of which are directed
to said anode;
potential means for controlling the potentials of said elements so
as to control the ionization current of each plasma between each
target and directed to said anode through a different set of
apertures of said elements, said plates and apertures being spaced
between said anode and cathode whereby when the selected area of
said anode is aligned with a first of said targets only neutral
material particles from said first target reach said selected area,
with neutral material particles from either or both said first and
second elements reaching said selected anode area continuously as
said anode is rotated and the selected anode area is moved from
alignment with said first target to alignment with said second
target.
2. The apparatus as described in claim 1 further including
rotatable apertured shutter means adjacent said anode positionable
in a first position to inhibit the neutral material particles from
any of said targets from reaching said selected anode area and
positionable in any one of other positions so as to expose said
selected anode area to the neutral material particles of at least
one of said targets.
3. The apparatus as described in claim 2 wherein said plurality of
elements includes a second group of apertured elements spaced apart
between the element of said first group most remote from said
cathode toward said anode, with said potential means applying a
different potential to each of said second group of elements.
4. The apparatus as described in claim 3 further including a
separate biasable ring in the path of each plasma extending from a
different target and means for controlling the ring potential to
control the plasma ionization current and thereby separately
control the rate of sputtering of each target.
5. The apparatus as described in claim 4 wherein the element of
said second group closest to said anode is at the anode potential
and each succeeding element of said second group positioned toward
said cathode is at a decreasing potential with respect to the anode
potential.
6. The apparatus as described in claim 1 wherein said plurality of
elements includes a first group of elements adjacent to said
cathode and spaced toward said anode, and connected to said
potential means to the anode potential so as to confine the plasma
from each target to extend toward the anode through a different set
of apertures of said elements.
7. The apparatus as described in claim 6 wherein said plurality of
elements includes a second group of apertured elements spaced apart
between the element of said first group most remote from said
cathode toward said anode, with said potential means applying a
different potential to each of said second group of elements.
8. The apparatus as described in claim 7 wherein the element of
said second group closest to said anode is at the anode potential
and each succeeding element of said second group positioned toward
said cathode is at a decreasing potential with respect to the anode
potential.
9. The apparatus as described in claim 6 further including a
separate biasable ring in the path of each plasma extending from a
different target and means for controlling the ring potential to
control the plasma ionization current and thereby separately
control the rate of sputtering of each target.
10. A sputtering apparatus for use in depositing on a substrate a
plurality of layers of different materials, with the interface
between adjacent layers consisting of only materials of the two
adjacent layers comprising:
a chamber for containing an inert gas at a selected low
pressure;
a single stationary cathode in said chamber, said cathode having
means for supporting at least first and second target materials
each having an exposed surface and defining a center;
a rotatable anode in said chamber spaced apart from said cathode
along a chamber axis for supporting a substrate thereon;
a plurality of elements spaced apart from one another and disposed
between said anode and cathode, each element defining first and
second apertures, the first apertures of said elements defining a
periphery of a first column extending from said first target to
said anode along a first axis parallel to said chamber axis, and
the second apertures defining the periphery of a second column
extending from said second target to said anode along a second axis
parallel to said chamber axis;
power means connected to said cathode and anode for applying a
potential difference therebetween whereby said gas ionizes to form
a first plasma in said first column extending from said first
target to said anode and a second plasma in said second column
extending from said second target to said anode, said first and
second plasmas including ions which respectively sputter said first
and second targets to cause neutral particles of said targets to be
separated therefrom, at least some of the particles of the first
and second targets travel through said first and second columns
respectively toward said anode;
potential means coupled to said elements for controlling the plasma
to be substantially confined to its respective column and for
controlling the plasma ionization current; and
control means for rotating said anode to a first position to
sequentially align said substrate with said first column and
thereafter with said second column, the apertures of said elements
being positioned whereby when said substrate aligned alogned in
said first column only particles from said first target reach said
substrate and are deposited thereon to form a first target material
layer and when said substrate is aligned in said second column with
said target only particles from said second target reach said
substrate and are deposited thereon as a second target material
layer and as said substrate is moved from alignment with said first
column to alignment with second column particles from at least one
of the targets continuously reaches said substrate to be deposited
thereon.
11. The apparatus as described in claim 10 further including a
rotatable shutter adapted to shield said substrate from particles
from any of said targets, said shutter being rotatable with said
anode to expose said substrate to either of said targets.
12. The apparatus as described in claim 11 further including a
separate biasing ring associated with each column to control the
ionization current of each plasma independently of the ionization
current in the other column, thereby independently controlling the
sputtering rate of each of said targets.
13. The apparatus as described in claim 12 wherein said potential
means are capable of controlling the potential of a first group of
said elements positioned adjacent to said cathode to be at said
anode potential to thereby prevent plasma spreading out of its
respective column.
14. The apparatus as described in claim 13 wherein said potential
means are capable of variably controlling the potentials of a
second group of said elements, positioned between said first group
and said anode with the element of said second group closest to
said anode being at the anode potential.
15. The apparatus as described in claim 11 wherein said potential
means are capable of controlling the potential of a first group of
said elements positioned adjacent to said cathode to be at said
anode potential to thereby prevent plasma spreading out of its
respective column.
Description
ORIGIN OF INVENTION
The invention described herein was made in the performance of work
under a NASA contract and is subject to the provisions of Section
305 of the National Aeronautics and Space Act of 1958, Public Law
85-568 (72 Stat. 435; 42 USC 2457).
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention generally relates to material deposition
apparatus and, more particularly, to an apparatus for sequentially
depositing layers of different materials with rigid control of the
interface composition on a substrate by sputtering.
2. Description of the Prior Art
In sputter deposition, material is deposited as a result of ion
bombardment of a target material or simply a target. The bombarding
ions cause atoms of the target to be ejected therefrom at high
velocity and become deposited on an appropriately exposed surface,
usually referred to as a substrate. Typically, the target is
physically and electrically connected to a cathode and the
substrate is positioned on an anode. The ions are produced from a
gas, generally inert or a gas mixture, present between the anode
and cathode across which a DC or RF potential is applied.
In many applications, it is necessary to produce a multilayer
structure of different materials in which each layer is of a very
precise thickness and the interface between layers is absolutely
free of contamination. This is particularly the case for electronic
circuits or devices used in space exploration. Therein, the
presence of any contamination between layers is not permissible due
to the unknown effect of such contamination on the device's
performance in space environments, or over long periods of
operation.
Sputtering apparatus capable of depositing several layers of
different materials on a single substrate are known. Generally, in
such an apparatus or equipment, each target is supported on a
separate cathode with its separate power network. After one layer
is deposited from a first target, which is on one cathode, the
power network of another cathode is activated. Then, after a period
of target cleansing, which can be as long as several hours, the
first layer is exposed to the cleansed target and a second layer is
deposited from the second target. Unfortunately, in the interim
period, i.e., between the time interval, the first layer was
deposited and the start of the deposition of the second layer, the
top surface of the first layer tends to become contaminated. Such
contamination prevents perfect interface between deposited
layers.
Manufacturers of multilayered units ignore the presence of the
contamination between layers since for general commercial
applications, its effect can be minimized by baking, i.e.,
annealing the multilayered structures. However, for applications in
which the presence of any contamination cannot be permitted, the
annealing is of no value. Thus, prior-art sputtering apparatus
cannot be used. Also, in prior art sputtering equipment in which
matter is depositable from different targets on a single substrate
there is no capability to individually control the rate of
deposition of the material of each target. As is known, materials
used in sputter-deposition have different rates of deposition, and
therefore being able to individually control their sputtering rates
is important. Also, herebefore in sputtering apparatus for
sputtering different materials, several separate cathodes are
employed, one per target, with each cathode having its own separate
power network. This greatly increases the apparatus initial cost,
and maintenance requirements.
OBJECTS AND SUMMARY OF THE INVENTION
It is a primary object of the present invention to provide a new
sputtering apparatus.
Another object of the present invention is to provide a new
sputtering apparatus with which several layers of different
materials can be sequentially deposited without contamination
between layers.
Yet another object of the present invention is to provide a new
sputtering apparatus with a single cathode, supporting a plurality
of targets, and wherein the deposition rate from each target is
individually controllable.
A further object of the present invention is to provide a new
sputtering apparatus for successively depositing layers of
different materials with continuous deposition and rigid control of
the interface region between the layers.
These and other objects of the invention are achieved by providing
a sputtering apparatus with a single cathode to which a plurality
of targets of different materials are physically and electrically
connected. An anode supports a substrate on which the plurality of
layers of different materials is to be deposited. The anode is
spaced apart from the cathode. A plurality of apertured plates
which are spaced apart from one another are positioned near the
cathode and towards the anode. These plates confine the plasma to
extend in the form of a column from each target in the direction of
the anode and to prevent its spreading as well as to prevent
sputtered material cross contamination between the targets.
In addition, a plurality of spaced apart apertured biasing rings
are positioned after the plates toward the anode. These biasing
rings are charged with a potential gradient rising toward the anode
potential in order to control, simultaneously, the cross section
and therefore the plasma currrent in each column. Positioned in the
path of each plasma column between the anode and the last biasing
ring is a separate suppressor ring, which is connectable to a
different biasing voltage. Its function is to control the
individual current of each plasma and thereby individually control
the rate of deposition from each target, independently of the rate
of deposition from the other targets.
The plates, the biasing rings and the suppression rings are so
positioned as to prevent any cross contamination between the
targets. In addition, the apparatus includes movable shutters which
are initially positioned so as to inhibit any material from any of
the targets from reaching the substrate while the targets are being
cleansed. Thereafter, the shutters are positioned to expose the
substrate on the anode to a first target. After the desired layer
thickness is deposited the shutters and the anode, supporting the
substrate, are rotated so as to expose the latter to a second
target from which matter is to be deposited. The targets are
arranged so that as the substrate is moved from one position to the
next during the transition period, matter is continuously deposited
thereon, first from the first target, then from both targets when
the substrate is at a midpoint between the two targets and finally
only from the second target when the substrate is aligned
therewith. The continuous deposition of matter on the substrate
eliminates the possibility of contamination between deposited
layers and insures perfect interface therebetween.
The novel features of the invention are set forth with
particularity in the appended claims. The invention will best be
understood from the following description when read in conjunction
with the accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a side cross-sectional view of the basic embodiment of
the invention;
FIGS. 2 and 3 are top views of different parts, shown in FIG.
1;
FIG. 4 is a partial side view useful in explaining one aspect of
the invention; and
FIGS. 5 and 6 are additional top views of different parts, shown in
FIG. 1.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Attention is now directed to FIG. 1 wherein numeral 10 represents
an air-tight chamber which is connected to a vacuum system 12, and
to a reservoir 14 of metered gas, e.g., argon. As is known, the
chamber is first evacuated to a low pressure, e.g., 1 .times.
10.sup.-.sup.7 Torr and is then backfilled with a small amount of
gas from source 14 to an appropriate pressure on the order of
several microns.
Supported in chamber 10 is a single cathode 15 which is shown
suspended from a top plate 16. The cathode is cooled by a cooling
liquid from an appropriate source (not shown) by means of
interconnecting insulated conduits 18. Also supported in chamber 10
is an anode 20 which is rotatable by an external drive unit or
motor 22, to which it is connected by shaft 23. A stationary
liquid-cooled plate 25, with which the rotatable anode is in
thermal contact, is fixedly positioned in the chamber, such as by
means of brackets 26. Cooling liquid flows to and from plate 25
through conduits 27. The function of plate 25 is to remove heat
from anode 20.
The arrangement described so far is similar to prior art sputtering
apparatus. As shown in FIG. 1 an adapter plate 28 is attached to
the cathode 15, such as by means of screw 29. Attached to the plate
28 are a plurality of targets 30. Since the plate 28 is at the
cathode potential hereafter the targets will be thought of as being
connected to and supported by the cathode 15. FIG. 2 is a top view
of plate 28 and three targets 30, designated T1, T2 and T3. The
plate 28 and the targets are shown as circular. As shown, the
targets are not positioned symmetrically about the plate center.
Rather, the angles between T1 and T2, between T2 and T3, and
between T3 and T1, are 110.degree. , 110.degree., and 140.degree.,
respectively, for reasons to be explained hereinafter. Each target
is of a different material, a layer of which is to be deposited
either directly on the anode 20 or on a substrate supported
thereon. Such a substrate is shown in FIG. 1 and is designated by
numeral 32.
As is the case in the prior art, a potential difference is
established between the anode and cathode in the chamber.
Typically, the anode is at ground potential and the cathode is at
minus several Kv, e.g., approximately -3Kv. The large potential
difference produces a glow discharge or plasma as a result of the
ionization of the gas in the chamber. The ions strike the targets
causing neutral atoms to become separated therefrom, generally
referred to as sputtering, while the electrons travel to the
positive anode. At least some of the neutral atoms reach the
substrate on the anode to form the desired deposition layer. In the
present invention, the anode is assumed to be at ground potential,
and the negative potential is assumed to be applied to the cathode
15 from a network 33.
The targets must be cleansed before deposition can take place.
Therefore, a shutter 57 has to be incorporated. It is placed near
the anode and is at the anode potential, i.e., ground in the
present example. The shutter has an opening which in the present
invention is positioned so that when targets are cleansed the
substrate is not exposed to the sputtered material from any of the
targets.
In the present invention, since a single cathode is used when the
potential difference is applied between the anode and the cathode
during targets' cleansing and subsequent deposition, a plasma is
formed for each target and matter is sputtered from each target. To
insure the successive deposition of layers of the different target
materials, in which each layer consists of only one target
material, it is of primary importance to prevent any
cross-contamination between the plasmas and the materials sputtered
from the various targets. This can be achieved only by limiting the
plasma from each target to be directed to the substrate as a
separate column which is isolated from the other plasma columns,
and by insuring that sputtered matter from any target reaches the
substrate only when the latter is exposed to the particular plasma
column.
As shown in FIG. 1, the apparatus includes a plurality of plates
35. Two such plates are shown. Each plate 35 includes 3 apertures
36 as shown in FIG. 3. Each aperture diameter is greater than the
target diameter, by about 0.5 inch. The plates are fixedly
positioned so that the centers of the apertures are aligned along
vertical axes with the targets' centers. Thus, in a horizontal
plane, the periphery of each aperture 36 is about 1/4 inch from the
projected edge of the target. The plates are spaced apart 1/4 inch
from one another, with the plate 35 closest to the targets being
shown as about flush with targets' front faces.
Also included is a plate 37 with a single aperture 38 as shown in
FIG. 2. Plate 37 surrounds the cathode plate 28. The diameter of
aperture 38 is about 1/2 inch greater than the plate diameter. The
plate 37 is positioned so that it is about 1/4 inch from the
periphery of plate 28 and about 1/4 inch from the top plate 35. The
plates 35 and 37 are connected to ground potential. They perform
two functions. The first is to prevent both plasma and sputtered
matter cross contamination. The second function is to facilitate
the plasma formation along each column.
As is known, plasma tends to flow along the longest path. As the
plasma is formed near each target it tends to move outwardly toward
the walls of chamber 10. The presence of the shields at ground
potential confines the plasma to flow toward the anode. Due to the
presence of the plates the plasma is shaped as a column with its
outer surface being undulated as shown in FIG. 4 for a single
target. The plasma is designated by numeral 40. It is thus seen
that the shields restrict the plasma within the desired column and
prevent sputtered material cross-contamination between columns.
In addition to the plates, the apparatus of the present invention
includes a plurality of biasing shields 42. Three such shields are
shown in FIG. 1. Physically, the shields are identical to the
plates 35. That is, each has three apertures 36, as shown in FIG.
3. The shields 42 are also spaced apart 1/4 inch toward the anode.
However, unlike plates 35 which are at ground potential, the
shields 42 are connected to a divider network 45, represented as a
resistor 45a connected between ground and a minus potential -V. The
shield 42 closest to the anode is at a higher potential than the
shields closest to lowest plate 35. Thus, all the shields 42 are at
a lower potential than the anode which is at ground.
Due to the shields' potentials, the cross section of the plasma
passing through each set of apertures of the shields is restricted
thereby reducing plasma current which reduces the deposition rate.
It should be pointed out that the biasing shields 42 simultanesouly
control the plasmas from all three targets in the three columns
since the three plasmas flow through the same three biased shields.
In addition to controlling the cross sections of all the three
plasmas simultaneously, the shields 42, like plates 35 prevent
cross contamination between the three columns. Shields 42 like
plates 35 cause the shape of the plasma in each column to have the
undulated outer surface as shown in FIG. 4 and thereby retain each
plasma as a separate column and prevent plasma in one column from
extending into an adjacent column.
In addition to the aforedescribed parts the apparatus includes a
separate biasing ring 50 for each column. A top view of one ring 50
is shown in FIG. 5. Its aperture 52 is of the same size as each
aperture 36 of a shield 42. The three individual rings 50 are
located in the same plane about 1/4 inch below the lowest shield
42. Each ring 50 is connected to a separate bias source 55 (FIG. 5)
of negative voltage. Such voltage, like the ones applied to shield
42 reduces plasma current and therefore the deposition rate.
However, since herein, each column has a separately biasable ring
50, the plasma in each column is controllable independently of the
plasmas in the other columns.
As further shown in FIG. 1 a pair of shutters 57 and 58 are
included in chamber 10. Each is coupled by a separate shaft to
motor 22. Each shutter has an aperture 59 (see FIG. 6) with a
diameter which is generally equal to the diameter of the layer to
be deposited. Shutter 57 is utilized as a barrier when the surfaces
of the targets are cleansed, while shutter 58 is a target selector,
used to select the particular target from which materials is
deposited. Except during cleansing both shutters are moved together
by motor 22.
The use of the apparatus will now be described in connection with a
specific example in which it is assumed that a unit or structure
consisting of layers from targets T1, T2 and T3 is to be produced.
Either after or before placing the substrate 32 on the anode and
before establishing the necessary gas pressure in chamber 10,
shutter 58 is rotated so that its aperture is aligned with the
column of T1 and shutter 57 is rotated so that its aperture is in
the 140.degree. zone (see FIG. 2) between T3 and T1. Then the
potentials are applied to the cathode and anode. As a result,
target sputtering takes place thereby cleansing all three targets.
The potential is applied continuously throughout the entire
operation. The potential to network 33 may be applied at any point
before deposition begins. As the targets are cleansed due to the
position of shutter 57 none of the sputtered material reaches the
substrate 32.
After the targets are cleansed, the shutter 57 is rotated to align
its aperture with the column of T1. Thus, the substrate 32 is
exposed to target T1 and therefore the first layer is deposited
thereon. The bias on ring 50 in this column may be controlled to
control the deposition rate from T1. After the layer from T1
reaches the desired thickness both shutters 57 and 58 are rotated
together (clockwise in FIG. 2) with the anode 20 toward the column
of T2.
As the anode and the shutters move from the position in which the
substrate 32 and the shutters' apertures are aligned in the column
of T1 to that of T2, a deposition transition takes place. The
spacing between columns in the chamber and the movement of the
anode shutters are such that during the entire transition some
material is always deposited on the substrate. As the substrate and
the shutters move away from the column of T1, less material from T1
is deposited on the substrate until the substrate is completely
blocked off from the T1 column and is aligned in the T2 column.
Then only material from T2 is deposited to form the second layer.
In operation, when the substrate and the apertures of shutters 57
and 58 are midpoint between the T1 and T2 columns, i.e., about
55.degree. (see FIG. 2) from either column some matter from each of
targets T1 and T2 gets deposited on the substrate. However, as the
substrate becomes aligned with the T2 column, only matter from T2
is deposited thereon. Any matter from either T1 or T3 is blocked
off by the plates, shield rings as well as by the shutters which
are between the targets and the substrate.
The continuous deposition during the transition from T1 to T2
eliminates the presence of any contaminant between the deposited
layers. Also, it insures perfect interface between the two
deposited layers of materials from T1 and T2. After reaching the T2
column, the shutters remain thereat until the layer of T2 material
reaches the desired thickness. Then the anode and the shutters are
moved to column T3 to deposit the T3 material. Again, during the
transition from T2 to T3 material is continuously deposited on the
substrate to eliminate contamination between the second and third
layers and provide nearly perfect interface therebetween.
The apparatus of the present invention was used to deposit layers
of molybdenum and gold on nickel foil with perfect adhesion. It was
also used to deposit in sequence layers of titanium, molybdenum and
gold on an aluminum oxide substrate. When etched the layers which
were on the order of 500 to 1,000A (angstrom) in thickness were
found to be without fault. That is, the interfaces between layers
were perfect and did not contain any contaminants. It should be
appreciated that the invention is not intended to be limited for
use with the above-mentioned materials. Any sputterable materials
may be used therein. Also, more than one substrate may be
simultaneously exposed in the same column.
From the foregoing, it should thus be apparent that in the
apparatus of the present invention, once deposition starts from one
target it continues until completed to produce a multilayered unit
or structure without interruption. Thus, interlayer contamination
is prevented. The plates 35 and 37 and the shields 42 are spaced to
confine the plasma in each column and avoid sputtered material
cross contamination in adjacent columns. The spacing between
adjacent plates and shields generally in the order of 1/4 inch,
contains the plasma in each column, the plasma being characterized
by the undulated outer surface. By providing the bias network 45,
the currents in all three plasmas are controlled simultaneously. By
providing a separate biasing ring for each column, deposition rate
from each target is separately controllable. By providing a single
cathode which supports several targets, only a single power network
33 is required.
Although particular embodiments of the invention have been
described and illustrated herein, it is recognized that
modifications and art and may readily occur to those skilled in the
art consequently, it is intended that the claims be interpreted to
cover such modifications and equivalents.
* * * * *